CN110713206A - Preparation method of indium oxide-copper oxide composite material - Google Patents

Preparation method of indium oxide-copper oxide composite material Download PDF

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CN110713206A
CN110713206A CN201911221682.8A CN201911221682A CN110713206A CN 110713206 A CN110713206 A CN 110713206A CN 201911221682 A CN201911221682 A CN 201911221682A CN 110713206 A CN110713206 A CN 110713206A
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indium oxide
indium
copper
powder
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王伟
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Xian Jiaotong University
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    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
    • C01G3/02—Oxides; Hydroxides
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    • C01—INORGANIC CHEMISTRY
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    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases

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Abstract

The invention discloses a preparation method of an indium oxide-copper oxide composite material, which comprises the steps of preparing an indium chloride solution, and preparing in (OH) after centrifugation and drying treatment3Calcining the powder to obtain indium oxide nano powder; and then adding the indium oxide nano powder into a copper chloride solution for water bath reaction, adding a sodium hydroxide solution to obtain a primary product, and finally carrying out suction filtration and drying treatment on the primary product to obtain the indium oxide-copper oxide composite powder. The method can prepare the indium oxide copper oxide heterojunction with high crystallinity and realize batch production.

Description

Preparation method of indium oxide-copper oxide composite material
Technical Field
The invention belongs to the technical field of indium oxide-copper oxide composite material preparation, and particularly relates to a preparation method of an indium oxide-copper oxide composite material.
Background
Copper oxide has been used for decades as a multifunctional fine inorganic material in the fields of printing and dyeing, ceramics, glass, medicine and the like, is used as a main active component of a catalyst in the field of catalysis, and is used for oxidation, hydrogenation and NO (nitric oxide) in recent yearsXReduction, CO and hydrocarbon combustion, fine chemical synthesis, oxygen electrode deluxe and other multiple catalytic reactions are widely applied.
Indium (In) oxide2O3) The preparation method of the copper oxide composite material is one of research hotspots of the current material array, a large amount of materials are difficult to prepare in the existing preparation method, and batch production can be realized in the experiment.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a method for preparing an indium oxide-copper oxide composite material to realize mass production, aiming at the defects in the prior art.
The invention adopts the following technical scheme:
a process for preparing indium oxide-copper oxide composite material includes such steps as preparing indium chloride solution, centrifugal treating, baking to obtain in (OH)3Calcining the powder to obtain indium oxide nano powder; and then adding the indium oxide nano powder into a copper chloride solution for water bath reaction, adding a sodium hydroxide solution to obtain a primary product, and finally carrying out suction filtration and drying treatment on the primary product to obtain the indium oxide-copper oxide composite powder.
Specifically, the preparation of the indium chloride solution specifically comprises the following steps:
dropwise adding 0.5mol/L ammonia water into 1mol/L indium chloride solution, and heating in a water bath, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: (1-3), heating in a water bath at the temperature of 55-65 ℃ for 1-3 h, and adjusting the pH value of the solution to 8-9.
Specifically, in (OH) is prepared3The powder is specifically as follows:
continuously heating for 22-35 min; taking out the solution, cooling to room temperature, and centrifuging the obtained solution after cooling, wherein the rotation speed of the centrifugation is 2000-4000 r/min; washing the obtained precipitate with water, and drying in an oven at the temperature of 55-65 ℃; to obtain in (OH)3And (3) powder.
Specifically, the calcination treatment specifically comprises:
in (OH)3And putting the powder into a tubular furnace for calcining for 2-3 h at the calcining temperature of 550-650 ℃.
Specifically, the copper chloride solution is specifically:
mixing copper chloride, sodium hydroxide and water, then carrying out electromagnetic stirring to obtain a copper chloride solution, heating at the temperature of 55-65 ℃ for 1-2 h by electromagnetic stirring, then adding indium oxide powder after 4-5 h, and heating in a water bath.
Further, copper chloride: sodium hydroxide: water is (1-2): (1-5): (1-5).
Further, the water bath temperature is 80-90 ℃, and the heating time is 1-2 h.
Further, standing for 1-2 hours after water bath heating, and then adding a sodium hydroxide solution to obtain the required product.
Furthermore, the vacuum degree of the suction filtration is 0-1 Pa, the temperature of the drying treatment is 55-65 ℃, and the time is 1-2 h.
Compared with the prior art, the invention has at least the following beneficial effects:
according to the preparation method of the indium oxide-copper oxide composite material, the indium oxide-copper oxide heterojunction structure is prepared, the operation is convenient, the synthesis process is simple, the pollution is less, the manpower, material resources and financial resources are saved, and the prepared composite material is high in purity, uniform in distribution and high in activity.
Furthermore, indium chloride can well provide an indium source, indium hydroxide is a good precursor, high-crystallinity indium oxide is realized through calcination, copper chloride can well provide a copper source, copper can be oxidized into copper hydroxide by sodium hydroxide, impurities are removed through suction filtration and drying, and cost is reduced.
In conclusion, the invention can prepare the indium oxide copper oxide heterojunction with high crystallinity and realize batch production.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 shows In2O3Scanning electron microscope images by secondary electron imaging;
FIG. 2 shows 10 mol% of CuO-In2O3Secondary electron imaging scanning electron microscope images in which (a) is 1 μm, (b) is 500 μm, (c) is 500 μm, and (d) is 300 μm;
FIG. 3 is 10 mol% CuO-In2O3Backscattered electron imaging scanning electron microscope images, wherein (a) is 1 μm, (b) is 500 μm, (c) is 400 μm, and (d) is 400 μm.
Detailed Description
The invention relates to a preparation method of an indium oxide-copper oxide composite material, which comprises the following steps:
s1, preparing indium oxide nano powder;
s101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, and then dropwise adding the ammonia water into the indium chloride solution;
wherein the mass ratio of ammonia water to indium chloride solution is 1: (1-3), placing the indium chloride solution in a water bath kettle, heating the indium chloride solution in the water bath kettle at the water bath temperature of 55-65 ℃ for 1-3 hours, measuring the pH value of the solution in the dropping process through colorimetric paper, and controlling the dropping speed to enable the pH value of the solution to be stable at 8-9;
the following reactions occur in the solution during this process:
3OH-+In3+＝In(OH)3
s102, continuing heating after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging the solution after cooling, washing the obtained precipitate with water for 2-4 times, and drying in an oven to obtain in (OH)3Powder;
the continuous heating time is 22-35 min; the rotating speed of the centrifugal treatment is 2000-4000 r/min; the drying temperature is 55-65 ℃;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tubular furnace for calcining, wherein in the calcining furnace, the indium hydroxide powder is heated and decomposed into indium oxide powder and water, and the water is evaporated to finally obtain the required indium oxide nano powder.
The calcination time is 2-3 h, and the calcination temperature is 550-650 ℃.
S2, preparing indium oxide composite copper oxide powder;
s201, weighing copper chloride and sodium hydroxide in a beaker respectively, adding water, and electromagnetically stirring to dissolve the copper chloride and the sodium hydroxide;
copper chloride: sodium hydroxide: water is (1-2): (1-5): (1-5), wherein the temperature of electromagnetic stirring and heating is 55-65 ℃, and the time is 1-2 h.
S202, adding the indium oxide powder prepared in the step S1 into the copper chloride solution obtained in the step S201 after 4-5 hours; then putting the copper chloride (indium oxide) solution into a water bath for heating;
the ratio (1-2) between the copper chloride solution in the step S201 and the indium oxide powder in the step S1 is as follows: (1-5), the water bath temperature is 80-90 ℃, and the heating time is 1-2 h.
S203, after the step S202 is finished for 1-2 hours, adding a sodium hydroxide solution to obtain a required product preliminarily;
in the process, copper ions and added hydroxyl ions generate copper hydroxide, the decomposition temperature of the copper hydroxide is sharply reduced to about 50-60 ℃ under an alkaline condition, and the water bath temperature is 70-80 ℃, so that the copper hydroxide can be completely decomposed into copper oxide. The copper oxide thus obtained is composited with indium oxide.
And S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, and putting the obtained precipitate into an oven for drying to obtain the indium oxide and copper oxide composite powder.
The vacuum degree of the suction filtration is 0-1 Pa, the temperature of the drying treatment is 55-65 ℃, and the time is 1-2 h.
The obtained indium oxide-copper oxide composite powder is shown in fig. 1, fig. 2 and fig. 3, indium oxide is loaded on copper oxide as small particles, and mass production is realized, as seen from fig. 2, the copper oxide is flaky, and indium oxide is enriched on the flaky copper oxide; as seen from FIG. 3, the copper oxide is flaky, and the indium oxide is enriched on the flaky copper oxide, which proves that the invention can prepare the high-crystallinity indium oxide copper oxide heterojunction.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
S101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: 1, dropwise adding ammonia water into an indium chloride solution, wherein the indium chloride solution is in a water bath kettle, the water bath heating temperature is 55 ℃, the time is 1h, the pH value of the solution is measured in the dropwise adding process through colorimetric paper, and the dropwise adding speed is controlled so that the pH value of the solution is stabilized at 8;
s102, continuing heating for 22min after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging at 2000r/min, washing the precipitate with water for 2 times, oven drying at 55 deg.C to obtain in (OH)3Powder;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tube furnace to calcine for 2 hours at 550 ℃ to obtain the required indium oxide nano powder.
S201, respectively mixing copper chloride, sodium hydroxide and water according to the weight ratio of 1: 1: 1, mixing, electromagnetically stirring to dissolve, and electromagnetically stirring and heating at 55 ℃ for 1 h;
s202, 4h, adding the indium oxide powder prepared in step S1 into the copper chloride solution obtained in step S201: the indium oxide powder was, 1: 1; then putting the copper chloride (indium oxide) solution into a water bath for heating, wherein the water bath temperature is 80 ℃, and the heating time is 1 h;
s203, after the step S202 is finished for 1h, adding a sodium hydroxide solution to obtain a required product preliminarily;
and S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, wherein the vacuum degree of the suction filtration is 0Pa, and putting the obtained precipitate into an oven to be dried for 1h at the temperature of 55 ℃ to obtain the indium oxide and copper oxide composite powder. Example 2
S101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: 1, dropwise adding ammonia water into an indium chloride solution, wherein the indium chloride solution is in a water bath kettle, the water bath heating temperature is 58 ℃, the time is 1h, the pH value of the solution is measured in the dropwise adding process through colorimetric paper, and the dropwise adding speed is controlled so that the pH value of the solution is stabilized at 8;
s102, continuing heating for 24min after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging at 2000r/min, washing the precipitate with water for 2 times, oven drying at 58 deg.C to obtain in (OH)3Powder;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tube furnace to calcine for 2 hours at 550 ℃ to obtain the required indium oxide nano powder.
S201, respectively mixing copper chloride, sodium hydroxide and water according to the weight ratio of 1: 2: 2, mixing, electromagnetically stirring to dissolve, and electromagnetically stirring and heating at 58 ℃ for 1 h;
s202, 4h, adding the indium oxide powder prepared in step S1 into the copper chloride solution obtained in step S201: the indium oxide powder is 2: 1; then putting the copper chloride (indium oxide) solution into a water bath for heating, wherein the water bath temperature is 80 ℃, and the heating time is 1 h;
s203, after the step S202 is finished for 1h, adding a sodium hydroxide solution to obtain a required product preliminarily;
and S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, wherein the vacuum degree of the suction filtration is 0Pa, and putting the obtained precipitate into an oven to be dried for 1h at the temperature of 58 ℃ to obtain the indium oxide and copper oxide composite powder.
Example 3
S101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: dropwise adding ammonia water into the indium chloride solution, wherein the indium chloride solution is in a water bath kettle, the water bath heating temperature is 60 ℃, the time is 2 hours, the pH value of the solution is measured through colorimetric paper in the dropwise adding process, and the dropwise adding speed is controlled so that the pH value of the solution is stabilized at 8;
s102, continuing heating for 28min after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging at 3000r/min, and washing the precipitate with water3 times, drying at 60 deg.C in oven to obtain in (OH)3Powder;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tube furnace to calcine for 2.5 hours at 600 ℃ to obtain the required indium oxide nano powder.
S201, respectively mixing copper chloride, sodium hydroxide and water according to the weight ratio of 1: 5: 5, mixing, electromagnetically stirring to dissolve, and electromagnetically stirring and heating at the temperature of 60 ℃ for 1.5 hours;
s202, adding the indium oxide powder prepared in the step S1 into the copper chloride solution obtained in the step S201 after 4.5h, wherein the copper chloride solution: the indium oxide powder is 1: 3; then putting the copper chloride (indium oxide) solution into a water bath for heating, wherein the water bath temperature is 85 ℃, and the heating time is 1.5 h;
s203, after the step S202 is finished for 1.5h, adding a sodium hydroxide solution to obtain a required product preliminarily;
and S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, wherein the vacuum degree of the suction filtration is 0Pa, and putting the obtained precipitate into an oven to be dried for 1.5h at the temperature of 60 ℃ to obtain the indium oxide and copper oxide composite powder.
Example 4
S101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: dropwise adding ammonia water into an indium chloride solution, wherein the indium chloride solution is placed in a water bath kettle, the water bath heating temperature is 62 ℃, the time is 2 hours, the pH value of the solution is measured in the dropwise adding process through colorimetric paper, and the dropwise adding speed is controlled so that the pH value of the solution is stabilized at 8;
s102, continuing to heat for 32min after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging at 3000r/min, washing the precipitate with water for 3 times, oven drying at 62 deg.C to obtain in (OH)3Powder;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tube furnace to calcine for 2.5 hours at 600 ℃ to obtain the required indium oxide nano powder.
S201, respectively mixing copper chloride, sodium hydroxide and water according to the weight ratio of 2: 1: 1, mixing, electromagnetically stirring to dissolve, and electromagnetically stirring and heating at 62 ℃ for 1.5 hours;
s202, adding the indium oxide powder prepared in the step S1 into the copper chloride solution obtained in the step S201 after 4.5h, wherein the copper chloride solution: the indium oxide powder is 1: 5; then putting the copper chloride (indium oxide) solution into a water bath for heating, wherein the water bath temperature is 85 ℃, and the heating time is 1.5 h;
s203, after the step S202 is finished for 1.5h, adding a sodium hydroxide solution to obtain a required product preliminarily;
and S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, wherein the vacuum degree of the suction filtration is 1Pa, and putting the obtained precipitate into an oven to dry for 1.5h at 62 ℃ to obtain the indium oxide and copper oxide composite powder.
Example 5
S101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: dropwise adding ammonia water into the indium chloride solution, wherein the indium chloride solution is in a water bath kettle, the water bath heating temperature is 65 ℃, the time is 3 hours, the pH value of the solution is measured in the dropwise adding process through colorimetric paper, and the dropwise adding speed is controlled so that the pH value of the solution is stabilized at 9;
s102, continuing to heat for 35min after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging at 4000r/min, washing the precipitate with water for 4 times, oven drying at 64 deg.C to obtain in (OH)3Powder;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tube furnace to calcine for 3 hours at 650 ℃ to obtain the required indium oxide nano powder.
S201, respectively mixing copper chloride, sodium hydroxide and water according to the weight ratio of 2: 3: 3, mixing, electromagnetically stirring to dissolve, wherein the electromagnetic stirring and heating temperature is 64 ℃, and the time is 1-2 hours;
s202, 5h, adding the indium oxide powder prepared in step S1 into the copper chloride solution obtained in step S201: the indium oxide powder is 1: 4; then putting the copper chloride (indium oxide) solution into a water bath for heating, wherein the water bath temperature is 90 ℃, and the heating time is 2 hours;
s203, after the step S202 is finished for 2 hours, adding a sodium hydroxide solution to obtain a required product preliminarily;
and S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, wherein the vacuum degree of the suction filtration is 1Pa, and putting the obtained precipitate into an oven to be dried for 2 hours at 64 ℃ to obtain the indium oxide and copper oxide composite powder.
Example 6
S101, firstly, preparing 0.5mol/L ammonia water and 1mol/L indium chloride solution, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: dropwise adding ammonia water into the indium chloride solution, wherein the indium chloride solution is in a water bath kettle, the water bath heating temperature is 65 ℃, the time is 3 hours, the pH value of the solution is measured in the dropwise adding process through colorimetric paper, and the dropwise adding speed is controlled so that the pH value of the solution is stabilized at 9;
s102, continuing to heat for 35min after the ammonia water is dripped; taking out the solution, cooling to room temperature, centrifuging at 4000r/min, washing the precipitate with water for 4 times, oven drying at 65 deg.C to obtain in (OH)3Powder;
s103, mixing the product in (OH) obtained in the step S1023Further processing the powder; and putting the product into a tube furnace to calcine for 3 hours at 650 ℃ to obtain the required indium oxide nano powder.
S201, respectively mixing copper chloride, sodium hydroxide and water according to the weight ratio of 2: 5: 5, mixing, electromagnetically stirring to dissolve, and electromagnetically stirring and heating at 65 ℃ for 2 hours;
s202, 5h, adding the indium oxide powder prepared in step S1 into the copper chloride solution obtained in step S201: the indium oxide powder is 2: 5, then putting the copper chloride (indium oxide) solution into a water bath for heating, wherein the water bath temperature is 90 ℃, and the heating time is 2 hours;
s203, after the step S202 is finished for 2 hours, adding a sodium hydroxide solution to obtain a required product preliminarily;
and S204, taking out the solution obtained in the step S203, carrying out suction filtration treatment, wherein the vacuum degree of the suction filtration is 1Pa, and putting the obtained precipitate into a drying oven to dry for 2 hours at 65 ℃ to obtain the indium oxide and copper oxide composite powder.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.

Claims (9)

1. A preparation method of an indium oxide-copper oxide composite material is characterized by preparing an indium chloride solution, and obtaining in (OH) after centrifugation and drying treatment3Calcining the powder to obtain indium oxide nano powder; and then adding the indium oxide nano powder into a copper chloride solution for water bath reaction, adding a sodium hydroxide solution to obtain a primary product, and finally carrying out suction filtration and drying treatment on the primary product to obtain the indium oxide-copper oxide composite powder.
2. The method for preparing an indium oxide-copper oxide composite material according to claim 1, wherein the indium chloride solution is prepared by:
dropwise adding 0.5mol/L ammonia water into 1mol/L indium chloride solution, and heating in a water bath, wherein the mass ratio of the ammonia water to the indium chloride solution is 1: (1-3), heating in a water bath at the temperature of 55-65 ℃ for 1-3 h, and adjusting the pH value of the solution to 8-9.
3. The method of claim 1, wherein in (OH) is prepared3The powder is specifically as follows:
continuously heating for 22-35 min; taking out the solution, cooling to room temperature, and centrifuging the obtained solution after cooling, wherein the rotation speed of the centrifugation is 2000-4000 r/min; washing the obtained precipitate with water, and drying in an oven at the temperature of 55-65 ℃; to obtain in (OH)3And (3) powder.
4. The method for producing an indium oxide-copper oxide composite material according to claim 1, wherein the calcination treatment specifically comprises:
in (OH)3And putting the powder into a tubular furnace for calcining for 2-3 h at the calcining temperature of 550-650 ℃.
5. The method for preparing an indium oxide-copper oxide composite material according to claim 1, wherein the copper chloride solution is specifically:
mixing copper chloride, sodium hydroxide and water, then carrying out electromagnetic stirring to obtain a copper chloride solution, heating at the temperature of 55-65 ℃ for 1-2 h by electromagnetic stirring, then adding indium oxide powder after 4-5 h, and heating in a water bath.
6. The method for producing an indium oxide-copper oxide composite material according to claim 5, wherein the ratio of copper chloride: sodium hydroxide: water is (1-2): (1-5): (1-5).
7. The method for preparing an indium oxide-copper oxide composite material according to claim 5, wherein the water bath temperature is 80 to 90 ℃ and the heating time is 1 to 2 hours.
8. The method for preparing the indium oxide-copper oxide composite material according to claim 5, wherein the time for standing after water bath heating is 1-2 hours, and then a sodium hydroxide solution is added to obtain a desired product.
9. The method for preparing an indium oxide-copper oxide composite material according to claim 8, wherein the degree of vacuum of suction filtration is 0 to 1Pa, the temperature of drying treatment is 55 to 65 ℃, and the time is 1 to 2 hours.
CN201911221682.8A 2019-12-03 2019-12-03 Preparation method of indium oxide-copper oxide composite material Pending CN110713206A (en)

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CN111610234A (en) * 2020-07-07 2020-09-01 上海大学 Acetone gas sensor of field effect transistor and preparation method thereof
CN113070068A (en) * 2021-03-29 2021-07-06 广州大学 Indium oxide-copper oxide photocatalyst for carbon dioxide reduction and preparation method and application thereof
CN113151859A (en) * 2021-04-15 2021-07-23 福州大学 Preparation method and application of copper-indium composite catalyst

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CN110274935A (en) * 2019-07-03 2019-09-24 西安交通大学 The preparation method of alcohol alarm device and its indium oxide gas sensor

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111610234A (en) * 2020-07-07 2020-09-01 上海大学 Acetone gas sensor of field effect transistor and preparation method thereof
CN111610234B (en) * 2020-07-07 2021-09-07 上海大学 Acetone gas sensor of field effect transistor and preparation method thereof
CN113070068A (en) * 2021-03-29 2021-07-06 广州大学 Indium oxide-copper oxide photocatalyst for carbon dioxide reduction and preparation method and application thereof
CN113151859A (en) * 2021-04-15 2021-07-23 福州大学 Preparation method and application of copper-indium composite catalyst

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Application publication date: 20200121