CN110676808B - Silicon controlled rectifier fault self-testing method, circuit, connector and electrical equipment - Google Patents
Silicon controlled rectifier fault self-testing method, circuit, connector and electrical equipment Download PDFInfo
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- CN110676808B CN110676808B CN201910878827.5A CN201910878827A CN110676808B CN 110676808 B CN110676808 B CN 110676808B CN 201910878827 A CN201910878827 A CN 201910878827A CN 110676808 B CN110676808 B CN 110676808B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/26—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents
- H02H3/32—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents involving comparison of the voltage or current values at corresponding points in different conductors of a single system, e.g. of currents in go and return conductors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/04—Details with warning or supervision in addition to disconnection, e.g. for indicating that protective apparatus has functioned
- H02H3/044—Checking correct functioning of protective arrangements, e.g. by simulating a fault
Abstract
The invention relates to the technical field of leakage detection, and discloses a silicon controlled fault self-testing method, a circuit, a connector and electrical equipment. According to the technical scheme, the silicon controlled rectifier test control module receives an alternating current synchronous signal of a half-wave rectification circuit, and when the alternating current amplitude of the alternating current synchronous signal is judged to be less than zero, the silicon controlled rectifier is detected; outputting a starting signal to a controlled end of the controlled silicon within a first preset time to enable the controlled silicon to be conducted, and obtaining a first target voltage; outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage; and comparing the calculated difference value of the first target voltage and the second target voltage with a threshold value, judging whether the silicon controlled rectifier fails, outputting a fault signal to warn a user when the silicon controlled rectifier fails, realizing the self-detection of the silicon controlled rectifier in the electric leakage detection circuit, and not needing manual control detection.
Description
Technical Field
The invention relates to the technical field of leakage detection, in particular to a silicon controlled rectifier fault self-testing method, a circuit, a connector and electrical equipment.
Background
With the rapid popularization of household appliances, the high-frequency components in the load current of modern equipment increase, and the leakage protection standard becomes stricter. The leakage detection protection circuit is required to be periodically tested to ensure normal work and avoid possible damage to human bodies due to error conditions.
The new generation of leakage protection standard requires that when a key circuit or a device in a leakage protection circuit fails, a leakage protection chip can detect the failure and can start an audible and visual alarm. Thus, serious accidents caused by the failure of the leakage protection circuit can be avoided. At present, earth leakage protection can be carried out through the silicon controlled rectifier in the earth leakage protection circuit, but the silicon controlled rectifier short circuit or open circuit between the easy emergence silicon controlled rectifier pin of in use, this kind of condition is called the silicon controlled rectifier inefficacy, the silicon controlled rectifier will be uncontrolled, can't open or turn-off through trigger signal, make earth leakage protection circuit unable normal work, and detect the silicon controlled rectifier when carrying out earth leakage protection at present, need adopt extra AC signal of the same kind to provide synchronous information specially, need extra high-voltage isolation circuit and rectifier circuit, can all have great cost on cost and complexity in circuit design.
Disclosure of Invention
The invention mainly aims to provide a silicon controlled rectifier fault self-testing method, a circuit, a connector and electrical equipment, aiming at realizing the leakage protection in a leakage protection circuit and simultaneously realizing the silicon controlled rectifier self-detection.
In order to achieve the above object, the present invention provides a silicon controlled rectifier fault self-testing method, which comprises:
the silicon controlled rectifier test control module receives an alternating current synchronous signal of a half-wave rectification circuit, judges that the alternating current amplitude of the alternating current synchronous signal is less than zero, and starts to detect the silicon controlled rectifier;
outputting a starting signal to a controlled end of the controlled silicon within a first preset time to enable the controlled silicon to be conducted, and obtaining a first target voltage;
outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage;
and judging whether the silicon controlled rectifier fails or not according to the first target voltage and the second target voltage, and outputting a fault signal when the silicon controlled rectifier fails.
Preferably, the step of determining whether the thyristor fails according to the first target voltage and the second target voltage, and outputting a fault signal when the thyristor fails specifically includes:
comparing the voltage value of the first target voltage with the voltage value of the second target voltage, and taking the difference value of the first target voltage and the second target voltage as a thyristor detection value based on the fact that the larger voltage value is subtracted by the smaller voltage value;
and comparing the silicon controlled rectifier detection value with a preset threshold value, judging that the silicon controlled rectifier fails when the silicon controlled rectifier detection value is smaller than the preset threshold value, and outputting a fault signal when the silicon controlled rectifier fails.
Preferably, the step of outputting a turn-on signal to a controlled end of the thyristor within a first preset time to turn on the thyristor and obtain the first target voltage specifically includes:
outputting a starting signal to a controlled end of the controlled silicon within a third preset time to enable the controlled silicon to be conducted, and acquiring a first initial voltage;
outputting a turn-off signal to the controlled end of the controlled silicon within a fourth preset time to turn off the controlled silicon and obtain a first end voltage;
and determining the first target voltage according to the first starting voltage and the first ending voltage within a fifth preset time.
Preferably, the step of outputting a turn-on signal to the controlled end of the thyristor within a second preset time to turn on the thyristor and obtain a second target voltage specifically includes:
outputting a starting signal to a controlled end of the controlled silicon within a sixth preset time to enable the controlled silicon to be conducted, obtaining a second initial voltage, and confirming that the voltage of the half-wave rectification circuit received by the controlled silicon test control module is greater than the second initial voltage value;
confirming that the voltage of the silicon controlled rectifier test control module receiving the half-wave rectification circuit is smaller than the second initial voltage value within seventh preset time, and starting timing within eighth preset time;
and acquiring a second ending voltage within an eighth preset time, and determining the second target voltage according to the second starting voltage and the second ending voltage.
The invention also provides a silicon controlled rectifier fault self-test circuit, which comprises: the silicon controlled rectifier testing control module is connected with the half-wave rectifying circuit; wherein the content of the first and second substances,
the half-wave rectifying circuit is used for supplying power to the silicon controlled rectifier test control module;
the silicon controlled rectifier test control module is used for receiving an alternating current synchronous signal of the half-wave rectification circuit, detecting the silicon controlled rectifier when the alternating current amplitude of the alternating current synchronous signal is judged to be smaller than zero, and outputting a starting signal to a controlled end of the silicon controlled rectifier within a first preset time so as to conduct the silicon controlled rectifier to obtain a first target voltage;
outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage;
and judging whether the silicon controlled rectifier fails or not according to the first target voltage and the second target voltage, and outputting a fault signal when the silicon controlled rectifier fails.
Preferably, the thyristor fault self-test circuit is an independent test circuit or is integrated in a leakage detection chip or is integrated in a self-test integrated chip.
Preferably, the half-wave rectifier circuit comprises a first diode, a first resistor and an action coil, wherein a first end of the action coil is connected with a live wire of the power supply, a second end of the action coil is connected with an anode of the first diode, a cathode of the first diode is connected with a first end of the first resistor, and a second end of the first resistor is connected with the thyristor test control module;
the half-wave rectifying circuit further comprises a first capacitor and a second capacitor, wherein the first end of the first capacitor is connected with the controlled end of the controlled silicon, and the second end of the first capacitor is grounded; the first end of the second capacitor is connected with the second end of the first resistor, and the second end of the first capacitor is grounded.
Preferably, the controlled end of the controllable silicon is connected with the controllable silicon test control module, the input end of the controllable silicon is connected with the first end of the first resistor, and the output end of the controllable silicon is grounded.
The invention also proposes a connector applying the thyristor fault self-test method as described above.
The invention also proposes an electrical device applying the thyristor fault self-test method as described above, or comprising a thyristor fault self-test circuit as described above.
According to the technical scheme, the silicon controlled rectifier test control module receives an alternating current synchronous signal of a half-wave rectification circuit, and when the alternating current amplitude of the alternating current synchronous signal is judged to be less than zero, the silicon controlled rectifier is detected; outputting a starting signal to a controlled end of the controlled silicon within a first preset time to enable the controlled silicon to be conducted, and obtaining a first target voltage; outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage; and comparing the calculated difference value of the first target voltage and the second target voltage with a threshold value, judging whether the silicon controlled rectifier fails, outputting a fault signal to warn a user when the silicon controlled rectifier fails, realizing the self-detection of the silicon controlled rectifier while realizing the leakage protection in the leakage protection circuit, and needing no artificial control detection.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic flow chart of a first embodiment of a thyristor fault self-test method of the present invention;
FIG. 2 is a schematic flow chart of a second embodiment of a SCR fault self-testing method according to the present invention;
FIG. 3 is a schematic flow chart of a third embodiment of a SCR fault self-testing method according to the present invention;
FIG. 4 is a functional block diagram of a first embodiment of a thyristor fault self-test circuit of the present invention;
FIG. 5 is a schematic circuit diagram of a first embodiment of a thyristor fault self-test device of the present invention;
the reference numbers illustrate:
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should be considered to be absent and not within the protection scope of the present invention.
The invention provides a silicon controlled rectifier fault self-testing method, and referring to fig. 1, fig. 1 is a schematic flow chart of a first embodiment of the silicon controlled rectifier fault self-testing method.
In a first embodiment of a thyristor fault self-test method, the thyristor fault self-test method comprises the steps of:
and step S10, the silicon controlled rectifier test control module receives the alternating current synchronous signal of the half-wave rectification circuit, and starts to detect the silicon controlled rectifier when the alternating current amplitude of the alternating current synchronous signal is judged to be less than zero.
It should be noted that, in this embodiment, the silicon controlled fault self-testing method may be implemented in an independent test circuit, may be implemented in a leakage detection chip, and may also be implemented in a self-testing integrated chip, which is not limited in this embodiment.
Furthermore, the silicon controlled rectifier fault self-testing method is implemented in a leakage detection chip, namely, the leakage protection chip in the leakage protection circuit can be used as a silicon controlled rectifier testing control module, and the silicon controlled rectifier fault self-testing is realized under the condition that no additional peripheral devices and peripheral circuits are added.
And one end of the half-wave rectifying circuit is connected with a power supply, and the other end of the half-wave rectifying circuit is connected with the silicon controlled rectifier test control module to supply power to the silicon controlled rectifier test control module.
And step S20, outputting a starting signal to a controlled end of the controlled silicon within a first preset time to enable the controlled silicon to be conducted, and obtaining a first target voltage.
It should be noted that, in this embodiment, the preset time may be set artificially, and this embodiment is not limited to this. Within the preset time, 500 μ s can be assumed, the silicon controlled rectifier test control module outputs a starting signal to the controlled end of the silicon controlled rectifier, namely, a high level is applied to the controlled end of the silicon controlled rectifier, at the moment, the input end of the silicon controlled rectifier has a forward voltage, the controlled end has a high level input, the silicon controlled rectifier is conducted, and at the moment, the voltage obtained by the silicon controlled rectifier test control module is used as a first starting voltage. Within the preset time, it can be assumed as 500 μ s, a turn-off signal is output to the controlled end of the thyristor, so that the thyristor is turned off, i.e., a low level is applied to the controlled end of the thyristor, at this time, the thyristor stops working and is not turned on any more, and the voltage obtained by the thyristor test control module is used as a first end voltage. Within the preset thyristor test control module measurement waiting time, the thyristor test control module can calculate the first target voltage according to a first starting voltage when the thyristor is switched on and a first ending voltage when the thyristor is switched off, namely, the thyristor reference voltage is obtained.
And step S30, outputting a starting signal to the controlled end of the controlled silicon in a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage.
It should be noted that, in this embodiment, the preset time may be set artificially, and this embodiment is not limited to this. Within the preset time, 500 μ s can be assumed, the silicon controlled test control module outputs a turn-on signal to the controlled end of the silicon controlled rectifier, that is, a high level is applied to the controlled end of the silicon controlled rectifier, at this time, the input end of the silicon controlled rectifier has a forward voltage, the controlled end has a high level input, the silicon controlled rectifier is turned on, the voltage obtained by the silicon controlled test control module is used as a second initial voltage, and at this time, the silicon controlled test control module confirms that the voltage of the half-wave rectification circuit received by the silicon controlled test control module is greater than the second initial voltage value. And when the silicon controlled test control module confirms that the voltage of the half-wave rectification circuit is smaller than the second initial voltage value, the waiting time is over, the next preset time is counted, the voltage obtained by the silicon controlled test control module at the moment when the next preset time is over is used as a second end voltage, and the silicon controlled test control module can calculate the second target voltage according to the second initial voltage and the second end voltage, namely the actual voltage of the silicon controlled.
And step S40, judging whether the controllable silicon is invalid or not according to the first target voltage and the second target voltage, and outputting a fault signal when the controllable silicon is invalid.
Step S40 specifically includes: comparing the voltage value of the first target voltage with the voltage value of the second target voltage, and taking the difference value of the first target voltage and the second target voltage as a thyristor detection value based on the fact that the larger voltage value is subtracted by the smaller voltage value;
and comparing the silicon controlled rectifier detection value with a preset threshold value, judging that the silicon controlled rectifier fails when the silicon controlled rectifier detection value is smaller than the preset threshold value, and outputting a fault signal when the silicon controlled rectifier fails.
It is easy to understand that the voltage value of the first target voltage is compared with the voltage value of the second target voltage, that is, the reference voltage of the thyristor is compared with the actual voltage, the thyristor detection value is obtained by subtracting the smaller voltage value from the larger voltage value, and the thyristor detection value is compared with the preset threshold value, where the preset threshold value may be programmed by using a non-volatile programmable memory arranged in a chip, and the chip may be a leakage detection chip or a self-test integrated chip.
It should be noted that steps S10 to S40 may be configured to be performed in one SSTest _ En period, which is called a same period test; it may also be configured to be performed in two consecutive SSTest _ En cycles, referred to as an out-of-cycle test. The step S20 and the step S30 are called a same period test in one SSTest _ En period, and the step S20 and the step S30 are called an different period test in an SSTest _ En period adjacent to the step S30, where SSTest _ En is a preset test period, which is not limited in this embodiment.
According to the technical scheme, the silicon controlled rectifier test control module receives an alternating current synchronous signal of a half-wave rectification circuit, and when the alternating current amplitude of the alternating current synchronous signal is judged to be less than zero, the silicon controlled rectifier is detected; outputting a starting signal to a controlled end of the controlled silicon within a first preset time to enable the controlled silicon to be conducted, and obtaining a first target voltage; outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage; and comparing the calculated difference value of the first target voltage and the second target voltage with a threshold value, judging whether the silicon controlled rectifier fails, outputting a fault signal to warn a user when the silicon controlled rectifier fails, realizing the self-detection of the silicon controlled rectifier in the electric leakage detection circuit, and needing no artificial control detection.
It can be understood that the thyristor test control module may be only fault detection and have a leakage protection function, or may be a self-test integrated chip specially used for implementing the thyristor, that is, a separate self-test chip, or may be implemented by a self-test circuit formed by components such as a resistor and a capacitor, which is not limited herein. This embodiment is optional to be realized for adopting the earth leakage protection chip, utilize the earth leakage protection chip, the peripheral circuit of arranging again is realizing the earth leakage protection function to electrical equipment, the realization is to the silicon controlled rectifier simultaneously, the self-test of important electronic component such as current transformer, thereby electrical equipment's circuit structure has been simplified, can reduce electrical equipment's manufacturing cost, thereby solved and detected the silicon controlled rectifier when carrying out earth leakage protection, need adopt extra alternating current signal of the same kind to provide synchronous information specially, need extra high voltage isolation circuit and rectifier circuit, can all have the problem of great cost on cost and complexity in circuit design.
Further, as shown in fig. 2, a second embodiment of the thyristor fault self-testing method of the present invention is proposed based on the first embodiment of the thyristor fault self-testing method, and in this embodiment, the step S20 includes:
step S201, outputting a starting signal to the controlled end of the controlled silicon in a third preset time to enable the controlled silicon to be conducted, and obtaining a first starting voltage.
It should be noted that, in this embodiment, the third preset time may be set manually, which is not limited in this embodiment, and it may be assumed that the third preset time is 500 μ s, the silicon controlled test control module outputs a start signal to the controlled end of the silicon controlled, that is, applies a high level to the controlled end of the silicon controlled, at this time, the input end of the silicon controlled has a forward voltage, the controlled end has a high level input, the silicon controlled is turned on, and the voltage obtained by the silicon controlled test control module is used as the first start voltage.
And S202, outputting a turn-off signal to the controlled end of the controlled silicon within a fourth preset time to turn off the controlled silicon and obtain a first end voltage.
It should be noted that, in this embodiment, the fourth preset time may be set manually, which is not limited in this embodiment, and it may be assumed that the fourth preset time is 500 μ s, the silicon controlled test control module outputs a turn-off signal to the controlled end of the silicon controlled, that is, a low level is applied to the controlled end of the silicon controlled, at this time, the silicon controlled stops working and is not turned on, and the voltage obtained by the silicon controlled test control module is used as the first end voltage.
Step S203, in a fifth preset time, determining the first target voltage according to the first starting voltage and the first ending voltage.
It should be noted that, in this embodiment, the fifth preset time is a waiting time for the measurement of the thyristor test control module, and the thyristor test control module may calculate the first target voltage according to a first start voltage when the thyristor is turned on and a first end voltage when the thyristor is turned off.
According to the technical scheme, a controlled end of the controlled silicon is output with a starting signal within a third preset time through a controlled silicon test control module, so that the controlled silicon is conducted, and a first initial voltage is obtained; the silicon controlled rectifier test control module outputs a turn-off signal to the controlled end of the silicon controlled rectifier within a fourth preset time so as to turn off the silicon controlled rectifier and obtain a first end voltage; and in a fifth preset time, the silicon controlled test control module determines the first target voltage according to the first starting voltage and the first ending voltage, so that the silicon controlled reference voltage can be obtained.
Further, as shown in fig. 3, a third embodiment of the thyristor fault self-testing method of the present invention is proposed based on the first embodiment of the thyristor fault self-testing method, and in this embodiment, the step S30 includes:
step S301, outputting a starting signal to a controlled end of the controlled silicon within a sixth preset time to enable the controlled silicon to be conducted, and obtaining a second initial voltage, wherein the voltage of the half-wave rectification circuit received by the controlled silicon test control module is confirmed to be greater than the second initial voltage value;
it should be noted that, in this embodiment, the sixth preset time may be set manually, which is not limited in this embodiment, it may be assumed that the sixth preset time is 500 μ s, the silicon controlled test control module outputs a start signal to the controlled end of the silicon controlled rectifier, that is, a high level is applied to the controlled end of the silicon controlled rectifier, at this time, a forward voltage is provided at the input end of the silicon controlled rectifier, the silicon controlled rectifier is turned on when the controlled end has a high level input, the voltage obtained by the silicon controlled test control module is used as a second initial voltage, and at this time, the silicon controlled test control module determines that the voltage received by the silicon controlled test control module by the half-wave rectification circuit is greater than the second initial voltage value.
Step S302, confirming that the voltage of the silicon controlled rectifier test control module receiving the half-wave rectification circuit is smaller than the second initial voltage value within seventh preset time, and starting timing within eighth preset time;
it should be noted that, in this embodiment, the seventh preset time is a waiting time of the silicon controlled rectifier test control module, at this time, the silicon controlled rectifier test control module receives a voltage change of the half-wave rectification circuit, and when the silicon controlled rectifier test control module determines that the voltage of the half-wave rectification circuit is smaller than the second initial voltage value, the waiting time, that is, the seventh preset time is ended, and the eighth preset time is started to be timed.
Step S303, obtaining a second end voltage within an eighth preset time, and determining the second target voltage according to the second start voltage and the second end voltage.
In this embodiment, the eighth preset time may be set manually, which is not limited in this embodiment, when the eighth preset time is over, the voltage obtained by the silicon controlled test control module is used as the second end voltage, and the silicon controlled test control module may calculate the second target voltage according to the second start voltage and the second end voltage to obtain the actual voltage of the silicon controlled.
According to the technical scheme, a controlled end of the controlled silicon is connected by outputting a starting signal to the controlled end of the controlled silicon within a sixth preset time through the controlled silicon test control module, so that a second initial voltage is obtained, and at the moment, it is confirmed that the voltage of the half-wave rectification circuit received by the controlled silicon test control module is greater than the second initial voltage value; confirming that the voltage of the silicon controlled rectifier test control module receiving the half-wave rectification circuit is smaller than the second initial voltage value within seventh preset time, and starting timing within eighth preset time; and in an eighth preset time, obtaining a second ending voltage, and determining the second target voltage by the silicon controlled test control module according to the second starting voltage and the second ending voltage to obtain the actual voltage of the silicon controlled.
The invention also provides a silicon controlled rectifier fault self-test circuit.
Referring to fig. 4-5, fig. 4 is a functional block diagram of a first embodiment of a thyristor fault self-test circuit of the present invention; FIG. 5 is a schematic circuit diagram of a first embodiment of a thyristor fault self-test device of the present invention;
in the embodiment of the invention, the functional module of the silicon controlled fault self-test circuit is shown in fig. 4;
the thyristor fault self-test circuit comprises: the half-wave rectifier circuit 100, the thyristor 200 and the thyristor test control module 300; the half-wave rectifier circuit 100 is connected with a power supply and the silicon controlled rectifier test control module 300 respectively, and the silicon controlled rectifier 200 is connected with the half-wave rectifier circuit 100 and the silicon controlled rectifier test control module 300 respectively.
The half-wave rectifier circuit 100 is configured to supply power to the scr test control module 300. Referring to fig. 4 to 5, in this embodiment, the half-wave rectifier circuit 100 is connected to a power supply, and the half-wave rectifier circuit 100 is connected to the scr test control module 300 to supply power to the scr test control module 300.
The silicon controlled rectifier test control module 300 is configured to receive an ac synchronous signal of the half-wave rectifier circuit, detect a silicon controlled rectifier when the ac amplitude of the ac synchronous signal is judged to be less than zero, and output a start signal to a controlled end of the silicon controlled rectifier 200 within a first preset time, so that the silicon controlled rectifier 200 is turned on to obtain a first target voltage; outputting a starting signal to a controlled end of the controllable silicon 200 within a second preset time so as to conduct the controllable silicon 200 and obtain a second target voltage; and judging whether the controllable silicon 200 fails or not according to the first target voltage and the second target voltage, and outputting a fault signal when the controllable silicon 200 fails. Referring to fig. 4 to 5, in this embodiment, the scr test control module 300 performs a scr fault self-test, is connected to the controlled terminal of the scr 200, and outputs a start signal to the controlled terminal of the scr 200 to obtain a first target voltage, and performs the above-mentioned fault self-test again to obtain a second target voltage at the output terminal of the scr 200, and the scr test control module 300 determines whether the scr 200 fails by calculating a voltage difference value twice and comparing the voltage difference value with a threshold value, and outputs a fault signal to warn a user when the scr 200 fails.
Referring to fig. 5, it should be noted that the scr test control module 300 may further include: the half-wave rectifier circuit 100 provides an alternating current synchronous signal to the voltage stabilizing and power supplying module through a first power supply end VDD, and the voltage stabilizing and power supplying module is used for a silicon controlled rectifier test control module which receives the alternating current synchronous signal of the half-wave rectifier circuit 100 and judges that the alternating current amplitude of the alternating current synchronous signal is smaller than zero to carry out silicon controlled rectifier fault self-test on a silicon controlled rectifier Q1 through a silicon controlled rectifier test end SCR; the ground end GND is grounded; the test synchronization module is used for acquiring waveform information after half-wave rectification, extracting alternating current synchronization information from the waveform information, and performing self-test in a time period when the alternating current amplitude is smaller than zero according to the alternating current synchronization information to confirm whether the protection circuit and the current transformer T are normal or not; and the electric leakage protection functional module is used for realizing the electric leakage protection function. The excitation applying module applies an excitation signal to the current transformer T through the excitation end CT according to a preset period, and the current transformer T receives the excitation signal and outputs the excitation signal to the core access module after coupling; the core path module is used for detecting a sampling value and a reference value of the excitation signal; the self-testing module is used for calculating the difference between the sampling value and the reference value to obtain a difference value, and judging whether the current transformer is in a normal working state or not according to the difference value and a preset threshold value; the second power source terminal VDD2 is supplied as a backup power supply terminal. The scr test control module 300 may be an independent module for performing scr fault self-test alone, or may include the above other modules, which do not interfere with each other when performing corresponding functions, and a part of circuits may be multiplexed among the modules.
It is worth to be noted that, referring to fig. 5, the scr fault self-test circuit further includes an alarm circuit, which includes a third resistor R3 and a first light emitting diode D3; a first end of the third resistor R3 is connected to the warning end EOL of the scr test control module 300, a second end of the third resistor R3 is connected to the anode of the first led D3, and the cathode of the first led D3 is grounded. The silicon controlled rectifier test control module 300 has a silicon controlled rectifier fault self-test function, when the silicon controlled rectifier 200 is normal, an alarm end EOL of the silicon controlled rectifier test control module 300 outputs a normal signal alarm circuit to emit green light; when the thyristor 200 fails, the warning end EOL of the thyristor test control module 300 outputs a fault signal warning circuit to emit red warning light. Other ways of alerting the user may also be used, which is not limited by the embodiment.
Furthermore, the silicon controlled fault self-test circuit of the present invention may be an independent test circuit, and may be integrated in an electrical leakage detection chip, or the silicon controlled fault self-test circuit may include a silicon controlled test control module that is integrated in a self-test integrated chip, which is not limited in this embodiment.
Referring to fig. 4 to 5, in the present embodiment, the half-wave rectifier circuit 100 includes a first diode D1, a first resistor R1, and an operating coil L, a first end of the operating coil L is connected to the hot line of the power supply, a second end of the operating coil L is connected to the anode of the first diode, a cathode of the first diode D1 is connected to a first end of the first resistor R1, and a second end of the first resistor R1 is connected to the scr test control module. As in fig. 5, Line hot represents live Line and Line Neutral represents Neutral Line. The half-wave rectification circuit 100 further comprises a first capacitor C1 and a second capacitor C2, a first end of the first capacitor C1 is connected with the controlled end of the thyristor Q1, and a second end of the first capacitor C1 is grounded; the first end of the second capacitor C2 is connected to the second end of the first resistor R1, and the second end of the first capacitor C1 is grounded.
It should be noted that, the scr test control module receives the ac synchronization signal of the half-wave rectifier circuit, and turns on the thyristor Q1 when it is determined that the ac amplitude of the ac synchronization signal is less than zero, that is, the ac voltage is negative, because the first diode D1 exists, no current appears in the action coil L at this time, because the ac voltage is negative, the current passing through the first diode D1 is also zero, the current source consumed by the pin of the thyristor test control module is mainly the charge on the second capacitor C2, when the thyristor Q1 is turned on, the charge on the second capacitor C2 will have an additional discharge path, that is, the discharge is performed through the first resistor R1 and the thyristor Q1, and whether the thyristor normally works can be determined by comparing the difference in the discharge speed of the second capacitor C2 when the thyristor Q1 is turned on, that is, that the half-wave rectifier circuit 100 provides the ac synchronization signal for performing a thyristor self test, the charge of the second capacitor C2 can be calculated by the voltage amplitude of the half-wave rectification circuit received by the silicon controlled test control module, so that the silicon controlled fault self-test circuit and the leakage detection circuit are shared, the size of an integrated chip is reduced, and the cost is saved.
With further reference to fig. 4 to 5, in this embodiment, the scr fault self-test circuit further includes a thyristor Q1, the controlled terminal of the thyristor Q1 is connected to the thyristor test control module 300, the input terminal of the thyristor Q1 is connected to the first terminal of the first resistor R1, and the output terminal of the thyristor Q1 is grounded.
As shown in fig. 5, further includes a second diode D2 and a second resistor R2; the anode of the second diode D2 is connected to the hot line of the power supply, the cathode of the second diode D2 is connected to the first end of the second resistor R2, and the second end of the second resistor R2 is connected to the scr test control module 300. The second diode D2 is used to rectify ac power in the power supply into dc power. The second resistor R2 is used to limit the current and prevent the chip from being burned out by the large current in the power supply.
According to the technical scheme of the embodiment, the silicon controlled rectifier fault self-testing circuit is formed by arranging the half-wave rectification circuit 100, the silicon controlled rectifier 200 and the silicon controlled rectifier testing control module 300. The half-wave rectifier circuit 100 is connected with a power supply to supply power to the silicon controlled rectifier test control module 300, the silicon controlled rectifier test control module 300 detects the silicon controlled rectifier 200 after being electrified, and outputs a starting signal to the controlled end of the silicon controlled rectifier 200 within a first preset time so as to conduct the silicon controlled rectifier 200 and obtain a first target voltage; outputting a starting signal to a controlled end of the controllable silicon 200 within a second preset time so as to conduct the controllable silicon 200 and obtain a second target voltage; the thyristor test control module 300 calculates and judges whether the thyristor 200 fails according to the first target voltage and the second target voltage, and outputs a fault signal to warn a user when the thyristor 200 fails, so that the self-detection of the thyristor in the leakage detection circuit is realized, and the manual control detection is not needed.
The invention also proposes a connector applying the thyristor fault self-test method as described above. Since the connector adopts all the technical schemes of all the embodiments of the silicon controlled fault self-testing method, all the beneficial effects brought by the technical schemes of the embodiments of the silicon controlled fault self-testing method are at least achieved, and the detailed description is omitted.
The invention also proposes an electrical device comprising a thyristor fault self-test method as described above, or applying a thyristor fault self-test circuit as described above. The thyristor fault self-test device comprises the thyristor fault self-test circuit, the specific structure of the thyristor fault self-test circuit refers to the embodiment, and the electric appliance equipment adopts all the technical schemes of all the thyristor fault self-test method embodiments, so that the thyristor fault self-test device at least has all the beneficial effects brought by the technical schemes of the thyristor fault self-test method embodiments, and the details are not repeated.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. The silicon controlled rectifier fault self-test method is applied to a silicon controlled rectifier fault self-test circuit, and the silicon controlled rectifier fault self-test circuit comprises the following steps: the silicon controlled rectifier testing control module is connected with the half-wave rectifying circuit; the half-wave rectifying circuit comprises a first diode, a first resistor and an action coil, wherein the first end of the action coil is connected with a live wire of the power supply, the second end of the action coil is connected with the anode of the first diode, the cathode of the first diode is connected with the first end of the first resistor, and the second end of the first resistor is connected with the silicon controlled rectifier test control module; the half-wave rectifying circuit further comprises a first capacitor and a second capacitor, wherein the first end of the first capacitor is connected with the controlled end of the controlled silicon, and the second end of the first capacitor is grounded; the first end of the second capacitor is connected with the second end of the first resistor, and the second end of the second capacitor is grounded; the anode of the controlled silicon is connected between the cathode of the first diode and the first end of the first resistor, the cathode of the controlled silicon is grounded, and the controlled end of the controlled silicon is connected with the controlled silicon test control module;
the silicon controlled rectifier fault self-testing method comprises the following steps:
the silicon controlled rectifier test control module receives an alternating current synchronous signal of a half-wave rectification circuit, judges that the alternating current amplitude of the alternating current synchronous signal is less than zero, and starts to detect the silicon controlled rectifier;
outputting a starting signal to a controlled end of the controlled silicon within a first preset time to enable the controlled silicon to be conducted, and obtaining a first target voltage;
outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage;
and judging whether the silicon controlled rectifier fails or not according to the first target voltage and the second target voltage, outputting a fault signal when the silicon controlled rectifier fails, and judging whether the silicon controlled rectifier normally works or not by comparing whether the silicon controlled rectifier is opened or not and judging whether the discharge speed of a second capacitor is different.
2. The silicon controlled rectifier fault self-test method as claimed in claim 1, wherein said step of determining whether the silicon controlled rectifier fails according to the first target voltage and the second target voltage, and outputting a fault signal when the silicon controlled rectifier fails, specifically comprises:
comparing the voltage value of the first target voltage with the voltage value of the second target voltage, and taking the difference value of the first target voltage and the second target voltage as a thyristor detection value based on the fact that the larger voltage value is subtracted by the smaller voltage value;
and comparing the silicon controlled rectifier detection value with a preset threshold value, judging that the silicon controlled rectifier fails when the silicon controlled rectifier detection value is smaller than the preset threshold value, and outputting a fault signal when the silicon controlled rectifier fails.
3. The silicon controlled rectifier fault self-test method as claimed in claim 1, wherein the step of outputting a turn-on signal to the controlled terminal of the silicon controlled rectifier within a first preset time to turn on the silicon controlled rectifier to obtain a first target voltage includes:
outputting a starting signal to a controlled end of the controlled silicon within a third preset time to enable the controlled silicon to be conducted, and acquiring a first initial voltage;
outputting a turn-off signal to the controlled end of the controlled silicon within a fourth preset time to turn off the controlled silicon and obtain a first end voltage;
and determining the first target voltage according to the first starting voltage and the first ending voltage within a fifth preset time.
4. The silicon controlled rectifier fault self-test method as claimed in claim 1, wherein the step of outputting a turn-on signal to the controlled terminal of the silicon controlled rectifier within a second preset time to turn on the silicon controlled rectifier to obtain a second target voltage includes:
outputting a starting signal to a controlled end of the controlled silicon within a sixth preset time to enable the controlled silicon to be conducted, obtaining a second initial voltage, and confirming that the voltage of the half-wave rectification circuit received by the controlled silicon test control module is greater than the second initial voltage value;
confirming that the voltage of the silicon controlled rectifier test control module receiving the half-wave rectification circuit is smaller than the second initial voltage value within seventh preset time, and starting timing within eighth preset time;
and acquiring a second ending voltage within an eighth preset time, and determining the second target voltage according to the second starting voltage and the second ending voltage.
5. A thyristor fault self-test circuit, comprising: the silicon controlled rectifier testing control module is connected with the half-wave rectifying circuit; the half-wave rectifying circuit comprises a first diode, a first resistor and an action coil, wherein the first end of the action coil is connected with a live wire of the power supply, the second end of the action coil is connected with the anode of the first diode, the cathode of the first diode is connected with the first end of the first resistor, and the second end of the first resistor is connected with the silicon controlled rectifier test control module; the half-wave rectifying circuit further comprises a first capacitor and a second capacitor, wherein the first end of the first capacitor is connected with the controlled end of the controlled silicon, and the second end of the first capacitor is grounded; the first end of the second capacitor is connected with the second end of the first resistor, and the second end of the second capacitor is grounded; the anode of the controlled silicon is connected between the cathode of the first diode and the first end of the first resistor, the cathode of the controlled silicon is grounded, and the controlled end of the controlled silicon is connected with the controlled silicon test control module; wherein the content of the first and second substances,
the half-wave rectifying circuit is used for supplying power to the silicon controlled rectifier test control module;
the silicon controlled rectifier test control module is used for receiving an alternating current synchronous signal of the half-wave rectifier circuit, detecting the silicon controlled rectifier when the alternating current amplitude of the alternating current synchronous signal is judged to be smaller than zero, and outputting a starting signal to a controlled end of the silicon controlled rectifier within a first preset time so as to conduct the silicon controlled rectifier to obtain a first target voltage;
outputting a starting signal to a controlled end of the controlled silicon within a second preset time to enable the controlled silicon to be conducted, and obtaining a second target voltage;
and judging whether the silicon controlled rectifier fails or not according to the first target voltage and the second target voltage, outputting a fault signal when the silicon controlled rectifier fails, and judging whether the silicon controlled rectifier normally works or not by comparing whether the silicon controlled rectifier is opened or not and judging whether the discharge speed of a second capacitor is different.
6. The thyristor fault self-test circuit of claim 5, wherein the thyristor fault self-test circuit is a stand-alone test circuit or the thyristor fault self-test circuit is integrated within a leakage detection chip or the thyristor fault self-test circuit is integrated within a self-test integrated chip.
7. The thyristor fault self-test circuit of claim 5, wherein the controlled terminal of the thyristor is connected to the thyristor test control module, the input terminal of the thyristor is connected to the first terminal of the first resistor, and the output terminal of the thyristor is grounded.
8. A connector, characterized in that it applies the thyristor fault self-test method according to any one of claims 1 to 4.
9. An electrical device applying the thyristor fault self-test method of any one of claims 1 to 4 or comprising the thyristor fault self-test circuit of any one of claims 5 to 7.
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