CN110661064A - Phase shifter and preparation and packaging method thereof - Google Patents
Phase shifter and preparation and packaging method thereof Download PDFInfo
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- CN110661064A CN110661064A CN201910936795.XA CN201910936795A CN110661064A CN 110661064 A CN110661064 A CN 110661064A CN 201910936795 A CN201910936795 A CN 201910936795A CN 110661064 A CN110661064 A CN 110661064A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
Abstract
The invention provides a phase shifter and a preparation and packaging method thereof, relates to the technical field of phase shifters, and can ensure the phase shifting precision of the phase shifter. The phase shifter comprises: the MEMS device comprises an MEMS device substrate, a packaging substrate and a sealing frame structure arranged between the MEMS device substrate and the packaging substrate, wherein the sealing frame structure is used for forming a closed space between the MEMS device substrate and the packaging substrate. The sealing frame structure comprises a sealant; the packaging substrate comprises a first substrate, and a distance is reserved between the first substrate and the MEMS device substrate.
Description
Technical Field
The present invention relates to phase shifters, and more particularly, to a phase shifter and a method for fabricating and packaging the same.
Background
A phase shifter is a device capable of adjusting the phase of a wave. The phase shifter has wide application in the fields of radar, missile attitude control, accelerators, communication, instruments and even music and the like.
In the field of communications, microwave phase shifters and millimeter wave phase shifters are key components that constitute transmitters, receivers, phased antennas, and the like. The phase shifter is mainly realized by adopting a ferrite material, a PIN Diode (PIN Diode) or a switch of a field effect transistor, and has the defects of large volume, high power consumption, poor signal transmission quality and the like.
Disclosure of Invention
The embodiment of the invention provides a phase shifter and a preparation and packaging method thereof, which can ensure the phase shifting precision of the phase shifter.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in one aspect, a phase shifter is provided, including: the MEMS device comprises an MEMS device substrate, a packaging substrate and a sealing frame structure arranged between the MEMS device substrate and the packaging substrate, wherein the sealing frame structure is used for enabling a sealed space to be formed between the MEMS device substrate and the packaging substrate.
The frame sealing structure comprises a sealant.
The package substrate includes a first substrate with a spacing between the first substrate and the MEMS device substrate.
Optionally, the package substrate further includes a support structure disposed on a side of the first substrate facing the MEMS device substrate, and the support structure is disposed in an area surrounded by the sealing frame structure.
The support structure is in contact with the MEMS device substrate.
Optionally, a metal bridge is disposed on the MEMS device substrate.
The support structure is disposed around the metal bridge.
Optionally, the support structure includes a plurality of support columns arranged at intervals, and the plurality of support columns are arranged around the metal bridge in a circle.
Optionally, the frame sealing structure further includes a support structure disposed on a side of the first substrate facing the MEMS device substrate, and the support structure is disposed in the sealant.
The support structure is in contact with the MEMS device substrate.
Optionally, the first substrate includes any one of a glass substrate, a quartz substrate, and a silicon substrate.
In another aspect, a method for packaging a phase shifter is provided, including:
the packaging substrate and the MEMS device substrate are boxed; the packaging substrate comprises a first substrate and a sealing frame structure arranged on the first substrate, the sealing frame structure comprises sealant, and the sealing frame structure faces one side of the MEMS device substrate.
And curing the sealant by light to enable the packaging substrate and the MEMS device substrate to be bonded to form a closed space, wherein a space is reserved between the first substrate and the MEMS device substrate.
Optionally, preparing the package substrate includes:
and forming a support layer on one side of the first substrate, and carrying out a patterning process on the support layer to form a support structure.
And forming the frame sealing structure on the first substrate on which the supporting structure is formed, wherein the frame sealing structure and the supporting structure are positioned on the same side of the first substrate, and the supporting structure is positioned in an area enclosed by the frame sealing structure.
In another aspect, a method for manufacturing a phase shifter is provided, wherein a package motherboard and a MEMS device motherboard are aligned to a box; the packaging motherboard comprises a first substrate motherboard, wherein the first substrate motherboard is provided with a plurality of first areas, a frame sealing structure is formed in the first areas, and the frame sealing structure comprises sealant.
The MEMS device motherboard comprises a second substrate motherboard, the second substrate motherboard is provided with a plurality of second areas, the second areas are opposite to the first areas one by one, and the sizes of the second areas are the same as the sizes of the first areas; and an MEMS device is formed in the second area, faces one side of the sealing frame structure and is positioned in an area enclosed by the sealing frame structure.
And curing the sealant by light to bond the packaging motherboard with the MEMS device motherboard, forming a plurality of closed spaces between the packaging motherboard and the MEMS device motherboard, and enabling a space to be reserved between the first substrate motherboard and the MEMS device.
And cutting and sealing the packaging motherboard and the MEMS device motherboard to obtain a plurality of phase shifters, wherein each phase shifter is provided with a closed space surrounded by the sealing frame structure.
Optionally, preparing the package motherboard includes:
and forming a support layer on one side of the first substrate motherboard, and carrying out a patterning process on the support layer to form a support structure in each first region.
The framing structure is fabricated on the first substrate platter forming a support structure and in each first region.
The frame sealing structure and the supporting structure are located on the same side of the first substrate mother board, and the supporting structure is located in an area defined by the frame sealing structure.
The invention provides a phase shifter and a preparation and packaging method thereof, wherein the phase shifter comprises an MEMS device substrate, a packaging substrate and a sealing frame structure arranged between the MEMS device substrate and the packaging substrate, and the sealing frame structure is used for forming a closed space between the MEMS device substrate and the packaging substrate. On one hand, the curing temperature of the sealant contained in the sealing frame structure is low, the temperature cannot influence the structure of the MEMS device substrate, and particularly cannot cause the metal bridge to deform, so that the phase shifting precision of the phase shifter can be ensured; on the other hand, high temperature and high pressure do not exist in the curing process of the sealant, so that parasitic effect cannot be generated between the packaging substrate and the MEMS device substrate, and the phase shifting precision in the MEMS phase shifter can be further ensured; on the other hand, the packaging substrate can be made of non-metal materials, so that interference and signal shielding cannot be generated on microwave signals transmitted by the MEMS device substrate, and mutual interference between the packaging substrate and the MEMS substrate is small.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a MEMS device provided in an embodiment of the present invention;
fig. 2 is a schematic longitudinal sectional structure diagram of a phase shifter according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a phase shifter according to the related art;
FIG. 4a is a schematic diagram of a longitudinal cross-sectional structure of another phase shifter according to an embodiment of the present invention;
FIG. 4b is a schematic diagram of a longitudinal cross-sectional structure of another phase shifter according to an embodiment of the present invention;
FIG. 4c is a schematic diagram of a longitudinal cross-sectional structure of another phase shifter according to an embodiment of the present invention;
FIG. 4d is a schematic diagram of a longitudinal cross-sectional structure of another phase shifter according to an embodiment of the present invention;
fig. 4e is a schematic top view of a phase shifter according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a longitudinal cross-sectional structure of another phase shifter according to an embodiment of the present invention;
FIG. 6 is a flowchart illustrating a method for packaging a phase shifter according to an embodiment of the present invention;
fig. 7a is a schematic view illustrating a process of manufacturing a package substrate according to an embodiment of the invention;
FIG. 7b is a schematic view of another package substrate manufacturing process according to the embodiment of the invention;
FIG. 7c is a schematic view of another process for manufacturing a package substrate according to the embodiment of the invention;
FIG. 7d is a schematic view of another process for manufacturing a package substrate according to the embodiment of the invention;
fig. 7e is a schematic top view of a package substrate according to an embodiment of the invention;
FIG. 8a is a flow chart illustrating a method for fabricating a phase shifter according to an embodiment of the present invention;
FIG. 8b is a schematic diagram illustrating a process for fabricating a phase shifter according to an embodiment of the present invention;
fig. 9 a-9 b are schematic diagrams illustrating a manufacturing process of a motherboard package according to an embodiment of the present invention.
Reference numerals:
1-a phase shifter; 10-a package substrate; 101-a first substrate; 11-a MEMS device substrate; 110-a second substrate; 111-CPW signal lines; 112-CPW ground; 113-a metal bridge; 114-an insulating layer; 115-a MEMS device; 12-a frame sealing structure; 120-a sealant; 2-packaging the cap; 3-sealing ring; 4-a support layer; 40-a support structure; 401-support column; 5-packaging the motherboard; 51-a first substrate motherboard; 510-a first area; 6-MEMS device motherboard; 61-a second substrate motherboard; 610-second area.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
With the development of Micro-Electro-Mechanical systems (MEMS) technology, the development of Radio Frequency Micro-electromechanical (RF MEMS) phase shifters has been promoted. The phase shifter prepared by adopting the MEMS technology is called as an MEMS phase shifter, and the phase shifter has the advantages of low power consumption, high quality factor, high isolation and the like.
The most central component in the MEMS phase shifter is a MEMS device, which is used to shift the phase of the microwave signal transmitted by the MEMS device. As shown in fig. 1, the MEMS device mainly includes a coplanar waveguide (CPW) signal line 111, a CPW ground line 112, a metal bridge 113, and an insulating layer 114 disposed between the metal bridge 113 and the CPW signal line 111 and the CPW ground line 112; the metal bridge 113 is also connected to an electrode which makes it deformable and which is not shown in fig. 1.
The phase shift principle of the MEMS device to the microwave signal is as follows: the suspended portion of the metal bridge 113 is deformed toward the side close to the CPW signal line 111 by the electrostatic force due to the driving voltage periodically applied to the metal bridge 113, and the deformed position of the metal bridge 113 is shown by a dotted line in fig. 1. After the metal bridge 113 is deformed, the distance between the metal bridge 113 and the CPW signal line 111 is changed, which causes a change in load capacitance between the CPW signal line 111 and the metal bridge 113, thereby causing a change in transmission rate of the microwave signal transmitted on the CPW signal line 111. The phase of the microwave signal changes along with the change of the transmission rate after the transmission rate of the microwave signal changes, so that the MEMS device realizes the phase shift of the microwave signal.
Based on the above, as shown in fig. 2, an embodiment of the present invention provides a phase shifter 1, including: the MEMS device comprises a MEMS device substrate 11, a packaging substrate 10 and a sealing frame structure 12 arranged between the MEMS device substrate 11 and the packaging substrate 10, wherein the sealing frame structure 12 is used for forming a closed space between the MEMS device substrate 11 and the packaging substrate 10.
The framing structure 12 includes an encapsulant 120.
The package substrate 10 includes a first substrate 101, and a space is formed between the first substrate 101 and the MEMS device substrate 11.
The MEMS device substrate 11 is used to implement a phase shift function for microwave signals.
For example, as shown in fig. 2, the MEMS device substrate 11 may include a second substrate 110, and a MEMS device 115 disposed on the second substrate 110. The MEMS device 115 may include, for example, a CPW signal line 111, a CPW ground line 112, an insulating layer 114, and a metal bridge 113 disposed on the insulating layer 114.
Illustratively, the material of the metal bridge 113, the CPW signal line 111, and the CPW ground line 112 is at least one of conductive metals such as aluminum, silver, and copper.
It should be noted that fig. 2 only illustrates main components of the MEMS device substrate 11, and not all components, and all components of the MEMS device 115 are packaged in the phase shifter 1 in actual operation.
Illustratively, the first substrate 101 and the second substrate 110 may be at least one of a quartz substrate, a glass substrate, and a silicon substrate, for example.
The package substrate 10 and the seal frame structure 12 are used to isolate a vacuum or inert gas sealed space required by the normal operation of the MESM device 115 in the MEMS device substrate 11.
The encapsulant 120 in the package structure 12 is used to bond the MEMS device substrate 11 and the package substrate 10. For example, the sealant 120 may be a sealant. The curing temperature of the frame sealing glue is 200 degrees.
In order to avoid that the first substrate 101 contacts the metal bridge 113 and the metal bridge 113 deforms the metal bridge 113, a certain distance is provided between the first substrate 101 and the metal bridge 113. Illustratively, the spacing may be equal in magnitude to the height of the metal bridge 113. However, the embodiment of the present invention is not limited thereto, and the size of the space may be set according to actual requirements during specific setting, which is not limited herein.
In the related art, as shown in fig. 3, a MEMS device substrate 11 is packaged by using a packaging cap 2, a sealing ring 3 and an adhesive. Wherein, the open end of the packaging cap 2 is contacted with the MEMS device substrate 11, the sealing ring 3 is sleeved outside the open end of the packaging cap 2, and the adhesive is filled in the gaps among the sealing ring 3, the packaging cap 2 and the MEMS device substrate 11.
In the process of sealing the packaging cap 2, a direct current high voltage is needed to bond the packaging cap 2 and the MEMS device substrate 11, so as to form a closed space. On one hand, the high temperature (usually above 400 °), high pressure (usually in the range of 200V-1000V) generated when using the dc high voltage electricity may affect the working performance of the phase shifter 1, for example, the metal bridge 113 may be deformed by the high temperature, high pressure, resulting in the reduction of the phase shifting precision; for another example, the high temperature and the high pressure may cause a parasitic effect between the package cap 2 and the MEMS device substrate 11, the parasitic effect is generated between the package cap 2 and each line on the MEMS device substrate 11, and the parasitic effect may also cause a change in the phase shifting performance of the phase shifter 1, resulting in a decrease in the phase shifting accuracy. On the other hand, in order to ensure the strength of the phase shifter 1 after packaging, the used metal packaging cap 2 has a certain shielding effect on the microwave signal, and meanwhile, the metal packaging cap 2 also generates interference such as coupling influence and radiation loss on the microwave signal transmitted in the MEMS device substrate 11, thereby causing extra insertion loss, so that the mutual interference between the packaging cap 2 and the MEMS device substrate 11 is strong. Therefore, in the packaging process of the phase shifter 1 in the related art, due to the influence of high temperature and high pressure, the MEMS device substrate 11 generates a parasitic effect, the mutual interference between the package cap 2 and the MEMS device substrate 11 is strong, and the packaging process is complex.
In the phase shifter 1 according to the embodiment of the present invention, the phase shifter 1 is configured to include the MEMS device substrate 11, the package substrate 10, and the sealing frame structure 12 disposed therebetween, and the sealing frame structure 12 is used to form a sealed space between the MEMS device substrate 11 and the package substrate 10. On one hand, the curing temperature of the sealant 120 included in the frame sealing structure 12 is low, and the temperature does not affect the structure of the MEMS device substrate 11, and especially does not cause the metal bridge 113 to deform, so as to ensure the phase shifting precision of the phase shifter 1; on the other hand, high temperature and high pressure do not exist in the curing process of the sealant 120, so that parasitic effect cannot be generated between the package substrate 10 and the MEMS device substrate 11, and the phase shift precision in the MEMS phase shifter 1 can be further ensured; on the other hand, the material of the package substrate 10 may be a non-metal material, which will not interfere with and shield the microwave signal transmitted by the MEMS device substrate 11, and the mutual interference between the package substrate 10 and the MEMS substrate is small.
Optionally, as shown in fig. 4a, the package substrate 10 further includes a support structure 40 disposed on a side of the first substrate 101 facing the MEMS device substrate 11, and the support structure 40 is disposed in an area enclosed by the sealing frame structure 12.
The support structure 40 is in contact with the MEMS device substrate 11.
The supporting structure 40 is disposed in a region enclosed by the sealing frame structure 12, that is, along the thickness direction of the package substrate 10, there is no overlapping region between an orthographic projection of the supporting structure 40 on the first substrate 101 and an orthographic projection of the sealing frame structure 12 on the first substrate 101.
The support structure 40 is used for supporting the first substrate 101, so that a gap exists between the first substrate 101 and the metal bridge 113 in the MEMS device substrate 11, and the metal bridge 113 is prevented from being deformed due to the contact between the first substrate 101 and the metal bridge 113 caused by self-gravity and deformation. The height of the support structure 40 can be set according to actual needs, and is not limited herein.
For example, as shown in fig. 4a to 4c, an end of the support structure 40 near the MEMS device substrate 11 may be in contact with an insulating layer 114 on the MEMS device substrate 11. Alternatively, as shown in fig. 4d, an end of the support structure 40 close to the MEMS device substrate 11 may be in contact with the second substrate 110 on the MEMS device substrate 11.
The material of the supporting structure 40 is an insulating material, for example, the insulating material is organic, and may be any one of photosensitive polyimide and photoresist.
Optionally, the material of the supporting structure 40 is photoresist.
Since the support structure 40 functions to support the first substrate 101, the number and shape thereof may be selected according to actual needs, process conditions, and the like.
As an example, as shown in fig. 4a and 4d, the longitudinal section of the support structure 40 may be rectangular.
Alternatively, as shown in fig. 4b, the longitudinal section of the support structure 40 may be an inverted trapezoid. In the trapezoid, the shorter base is close to the MEMS device substrate 11 side.
Alternatively, as shown in fig. 4c, the longitudinal cross-section of the support structure 40 may be oval.
In the case shown in fig. 4a to 4d, the support structure 40 may include a plurality of support columns 401, each support column 401 having a longitudinal section of the above-described rectangular, trapezoidal, or elliptical shape. In addition, as shown in fig. 4e, the support structure 40 may be a single body, and when the longitudinal section thereof is the above-described rectangle, trapezoid, or ellipse, the plan view thereof may be a circular ring, or one of an elliptical ring and a rectangle, and fig. 4e illustrates an example in which the plan view of the support structure 40 is an ellipse.
The supporting structure 40 can provide a supporting force for the first substrate 101, so that the first substrate 101 is prevented from deforming to the side of the MEMS device substrate 11, the strength of the first substrate 101 is improved, and the influence on the working performance of the MEMS device substrate 11 due to the deformation of the first substrate 101 is avoided.
Alternatively, as shown in fig. 7b to 7e, the support structure 40 is arranged around the metal bridge 113 in one turn.
When the support structure 40 is disposed around the metal bridge 113 in a circle, one end of the support structure 40 contacts the insulating layer 114, which is beneficial to making the height of the support structure 40 smaller; meanwhile, the support structure 40 is disposed close to the metal bridge 113, and the metal bridge 113 is disposed in the middle of the MEMS device substrate 11, so that the support structure 40 is also closer to the middle of the MEMS device substrate 11, which is beneficial to reducing the length of the MEMS device substrate 11 and the volume of the phase shifter 1.
On this basis, as shown in fig. 7c to 7e, the supporting structure 40 may alternatively include a plurality of supporting pillars 401 arranged at intervals, and the plurality of supporting pillars 401 are arranged around the metal bridge 113 in a circle.
Illustratively, as shown in FIG. 4a, each support column 401 is rectangular in longitudinal cross-section.
Alternatively, as shown in fig. 4b, the longitudinal section of each support column 401 is an inverted trapezoid or an ellipse.
Still alternatively, as shown in fig. 4c, each support column 401 has an elliptical longitudinal cross-section and each support column has an elliptical shape.
When the plurality of support columns 401 are arranged around the metal bridge 113 in a circle, the support columns 401 can be conveniently manufactured by using a mask plate, and are not easy to collide with components on the MEMS device substrate 11.
Optionally, as shown in fig. 5, the frame sealing structure 12 further includes a support structure 40 disposed on a side of the first substrate 101 facing the MEMS device substrate 11, and the support structure 40 is disposed in the sealant 120. The support structure 40 is in contact with the MEMS device substrate 11.
The support structure 40 is disposed within the encapsulant 120 such that an orthographic projection of the encapsulant on the first substrate 101 covers an orthographic projection of the support structure 40 on the first substrate 101 along a thickness direction of the first substrate 101.
For example, as shown in fig. 5, the supporting structure 40 may be similar to the frame sealing structure 12, and may be a closed loop with an inverted trapezoid in longitudinal section, and a rectangular shape in top view. Alternatively, the support structure 40 may also include a plurality of support columns 401, each support column 401 having an inverted trapezoidal longitudinal section.
The support structure 40, when disposed within the encapsulant 120, facilitates application of the encapsulant 120 after fabrication of the support structure 40, and facilitates locating and defining the location of the framing structure 12.
The implementation of the present invention provides a method for packaging a phase shifter 1, as shown in fig. 6, including:
s1, as shown in fig. 2, the package substrate 10 and the MEMS device substrate 11 are sealed; the package substrate 10 includes a first substrate 101 and a sealing frame structure 12 disposed on the first substrate 101, where the sealing frame structure 12 includes a sealant 120, and the sealing frame structure 12 faces one side of the MEMS device substrate 11.
The package substrate 10 and the MEMS device substrate 11 can be aligned by using the alignment process conditions in the liquid crystal display panel production process.
Illustratively, the sealant 120 is a sealant.
The first substrate 101 may be, for example, at least one of a quartz substrate, a glass substrate, and a silicon substrate
S2, bonding the package substrate 10 and the MEMS device substrate 11 together by using the light-curing sealant 120 to form a sealed space, and the first substrate 101 and the MEMS device substrate 11 are spaced apart from each other.
For example, the frame sealing adhesive is cured by ultraviolet light, and the curing temperature is 200 °. The height of the frame sealing glue determines the size of the distance between the first substrate 101 and the MEMS device substrate 11, so that the coating height of the frame sealing glue needs to be controlled when the box is aligned, and the distance between the first substrate 101 and the MEMS device substrate 11 is ensured.
In the method for encapsulating the phase shifter 1 according to the embodiment of the present invention, the package substrate 10 and the MEMS device substrate 11 are bonded to each other by using a cell aligning process in a liquid crystal panel production process, and the package substrate 10 and the MEMS device substrate 11 are bonded to each other by using the light-curing sealant 120 to form a sealed space, thereby completing encapsulation of the MEMS device substrate 11. High temperature and high pressure do not exist in the box aligning and curing processes of the packaging substrate 10 and the MEMS device substrate 11, so that the metal bridge 113 in the MEMS device substrate 11 is not deformed due to the high temperature and the high pressure, parasitic capacitance cannot be generated between the packaging substrate 10 and the MEMS device substrate 11, and the phase shifting precision of the phase shifter 1 can be ensured; meanwhile, the package substrate 10 and the MEMS substrate do not interfere with each other, so that the quality of the microwave signal transmitted by the MEMS device substrate 11 can be ensured.
Optionally, the preparing the package substrate 10 includes:
s20, as shown in fig. 7a, the support layer 4 is formed on the first substrate 101 side, and the support structure 40 is formed by performing a patterning process on the support layer 4.
The patterning process comprises the steps of exposure, development, etching and the like.
As shown in fig. 7a, a support layer 4 is formed on the first substrate 101 side.
As shown in fig. 7b to 7d, after the patterning process is performed on the support layer 4, the support structure 40 is formed.
Illustratively, as shown in FIG. 7b, the support structure 40 may be a unitary body having a rectangular top view.
Alternatively, as shown in fig. 7c, the support structure 40 includes a plurality of support pillars 401 surrounding in a circle, each support pillar 401 is shaped as a step, and the top surface area of the step is smaller than the bottom surface area, and the bottom surface is close to the first substrate 101.
Alternatively, as shown in fig. 7d, the support structure 40 comprises a plurality of support columns 401 wound in a circle, each support column 401 being cylindrical in shape.
S21, as shown in fig. 7e, forming a frame sealing structure 12 on the first substrate 101 where the supporting structure 40 is formed, where the frame sealing structure 12 and the supporting structure 40 are located on the same side of the first substrate 101, and the supporting structure 40 is located in an area surrounded by the frame sealing structure 12.
For example, the frame sealing structure 12 is frame sealing glue, and a top view of the frame sealing structure 12 is rectangular.
It should be noted that the top view of the frame sealing structure 12 is not limited to a rectangle, but may also be a circular ring, an elliptical ring, or even an irregular figure, as long as it surrounds the supporting structure 40 for one circle.
The structure and the preparation process of the package substrate 10 are simple, and the manufacturing cost of the package substrate 10 is low.
Optionally, the preparation of the MEMS device substrate 11 as shown in fig. 2 includes: a MEMS device 115 is formed on the second substrate 110, wherein the MEMS device 115 includes a metal bridge 113.
Alternatively, the package substrate 10 and the MEMS device substrate 11 may be prepared by cutting a package motherboard and a MEMS device motherboard.
The package motherboard comprises a first substrate motherboard, wherein the first substrate motherboard is provided with a plurality of first areas, each first area is provided with a frame sealing structure, and the frame sealing structure comprises a sealant 120; after the package motherboard is cut, a package substrate 10 is correspondingly formed in each first area.
The MEMS device motherboard comprises a second substrate motherboard, wherein the second substrate motherboard is provided with a plurality of second areas, and MEMS devices are formed in the second areas; after the MEMS device mother board is cut, each second region correspondingly forms one MEMS device substrate 11.
The packaging substrates 10 and the MEMS device substrates 11 are prepared in batch by cutting the packaging mother board and the MEMS device mother board, so that the preparation process is simple and the preparation efficiency is high.
The embodiment of the present invention further provides a method for manufacturing a phase shifter 1, as shown in fig. 8a, including:
s30, as shown in figure 8b, the package motherboard 5 and the MEMS device motherboard 6 are paired into a box; the package motherboard 5 includes a first substrate motherboard 51, the first substrate motherboard 51 has a plurality of first regions 510, a sealing frame structure 12 is formed in the first regions 510, and the sealing frame structure 12 includes a sealant 120.
The MEMS device motherboard 6 comprises a second substrate motherboard 61, the second substrate motherboard 62 is provided with a plurality of second areas 610, the second areas 610 are opposite to the first areas 510 one by one, and the size of the second areas 610 is the same as that of the first areas 510; the second region 610 has the MEMS device 115 formed therein, and the MEMS device 115 faces one side of the frame sealing structure 12 and is located in a region surrounded by the frame sealing structure 12.
Wherein, the package motherboard 5 is used to form the package substrate 10 at a position corresponding to the first region 510. The MEMS device motherboard 6 is used to form the MEMS device substrate 11 at a position corresponding to the second region 610.
S31, bonding the package mother board 5 and the MEMS device mother board 6 by using the photo-curing sealant 120, forming a plurality of hermetic spaces between the package mother board 5 and the MEMS device mother board 6, and providing a space between the first substrate mother board 51 and the MEMS device 115.
S32, cutting the package motherboard 5 and the MEMS device motherboard 6 to obtain a plurality of phase shifters 1 as shown in fig. 2, where each phase shifter 1 has a closed space surrounded by the sealing frame structure 12.
According to the preparation method of the phase shifter 1 provided by the embodiment of the invention, a plurality of independent phase shifters 1 are obtained by firstly aligning the package mother board 5 and the MEMS device mother board 6 and then cutting. The phase shifter 1 is manufactured in a batch production mode, the manufacturing efficiency is high, and the manufacturing process is simple.
Optionally, preparing the package motherboard 5 includes:
s40, as shown in fig. 9a, the support layer 4 is formed on one side of the first substrate master 51, and the support structure 40 is formed in each of the first regions 510 by performing a patterning process on the support layer 4.
S41, as shown in fig. 9b, fabricating a framing structure 12 on the first substrate master 51 forming the support structure 40 and in each first area 510; the framing structure 12 and the support structure 40 are located on the same side of the first substrate mother board 51, and the support structure 40 is located in an area enclosed by the framing structure 12.
The packaging mother board 5 is used for preparing a plurality of packaging substrates 10 at one time, the preparation process is simple, and the preparation efficiency is high.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A phase shifter, comprising: the MEMS device comprises an MEMS device substrate, a packaging substrate and a sealing frame structure arranged between the MEMS device substrate and the packaging substrate, wherein the sealing frame structure is used for forming a closed space between the MEMS device substrate and the packaging substrate;
the frame sealing structure comprises a sealant;
the package substrate includes a first substrate with a spacing between the first substrate and the MEMS device substrate.
2. The phase shifter as recited in claim 1, wherein: the packaging substrate further comprises a supporting structure arranged on one side, facing the MEMS device substrate, of the first substrate, and the supporting structure is arranged in an area defined by the sealing frame structure;
the support structure is in contact with the MEMS device substrate.
3. The phase shifter of claim 1, wherein a metal bridge is disposed on the MEMS device substrate;
the support structure is disposed around the metal bridge.
4. The phase shifter of claim 3, wherein the support structure comprises a plurality of support posts spaced apart from one another, the plurality of support posts being arranged in a circle around the metal bridge.
5. The phase shifter of claim 1, wherein the framing structure further comprises a support structure disposed on a side of the first substrate facing the MEMS device substrate, the support structure disposed within the encapsulant;
the support structure is in contact with the MEMS device substrate.
6. The phase shifter according to claim 1, wherein the first substrate comprises any one of a glass substrate, a quartz substrate, and a silicon substrate.
7. A method for encapsulating a phase shifter, comprising:
the packaging substrate and the MEMS device substrate are boxed; the packaging substrate comprises a first substrate and a sealing frame structure arranged on the first substrate, the sealing frame structure comprises sealant, and the sealing frame structure faces one side of the MEMS device substrate;
and curing the sealant by light to enable the packaging substrate and the MEMS device substrate to be bonded to form a closed space, wherein a space is reserved between the first substrate and the MEMS device substrate.
8. The method for packaging a phase shifter according to claim 7, wherein the preparing the package substrate includes:
forming a supporting layer on one side of the first substrate, and carrying out a composition process on the supporting layer to form a supporting structure;
and forming the frame sealing structure on the first substrate on which the supporting structure is formed, wherein the frame sealing structure and the supporting structure are positioned on the same side of the first substrate, and the supporting structure is positioned in an area enclosed by the frame sealing structure.
9. A method for manufacturing a phase shifter is characterized in that,
aligning the packaging mother board and the MEMS device mother board to a box; the packaging motherboard comprises a first substrate motherboard, wherein the first substrate motherboard is provided with a plurality of first areas, a frame sealing structure is formed in the first areas, and the frame sealing structure comprises sealant;
the MEMS device motherboard comprises a second substrate motherboard, the second substrate motherboard is provided with a plurality of second areas, the second areas are opposite to the first areas one by one, and the sizes of the second areas are the same as the sizes of the first areas; an MEMS device is formed in the second area, faces one side of the sealing frame structure and is located in an area defined by the sealing frame structure;
curing the sealant by light to bond the packaging motherboard and the MEMS device motherboard, forming a plurality of closed spaces between the packaging motherboard and the MEMS device motherboard, and enabling a space to be reserved between the first substrate motherboard and the MEMS device;
and cutting and sealing the packaging motherboard and the MEMS device motherboard to obtain a plurality of phase shifters, wherein each phase shifter is provided with a closed space surrounded by the sealing frame structure.
10. The method for manufacturing a phase shifter according to claim 9, wherein the manufacturing of the package mother board includes:
forming a support layer on one side of a first substrate mother board, and carrying out a patterning process on the support layer to form a support structure in each first area;
manufacturing the frame sealing structure on the first substrate mother board forming a support structure and in each first area;
the frame sealing structure and the supporting structure are located on the same side of the first substrate mother board, and the supporting structure is located in an area defined by the frame sealing structure.
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