CN110660913A - Oriented organic crystal array, device array and preparation method thereof - Google Patents
Oriented organic crystal array, device array and preparation method thereof Download PDFInfo
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- CN110660913A CN110660913A CN201910948299.6A CN201910948299A CN110660913A CN 110660913 A CN110660913 A CN 110660913A CN 201910948299 A CN201910948299 A CN 201910948299A CN 110660913 A CN110660913 A CN 110660913A
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- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 21
- 229920006254 polymer film Polymers 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000000155 melt Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000005096 rolling process Methods 0.000 claims abstract description 3
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- NXCSDJOTXUWERI-UHFFFAOYSA-N [1]benzothiolo[3,2-b][1]benzothiole Chemical class C12=CC=CC=C2SC2=C1SC1=CC=CC=C21 NXCSDJOTXUWERI-UHFFFAOYSA-N 0.000 claims description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000002120 nanofilm Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- 238000009776 industrial production Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to an oriented organic crystal array, a device array and a preparation method thereof, wherein the oriented organic crystal array comprises the following steps: covering a highly oriented polymer film obtained by a melt film drawing method or a film rolling method on a silicon substrate to serve as a dielectric layer; coating a functional organic semiconductor material on the surface of the oriented polymer film; the highly oriented organic semiconductor crystal array is obtained by a solution annealing method. The method can improve the response of the organic semiconductor device.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to an oriented organic crystal array, a device array and a preparation method of the oriented organic crystal array.
Background
The organic semiconductor crystal material has the characteristics of strong designability, outstanding device performance and the like, and has wide application prospects in the fields of flexible electronics, wearable equipment development and the like, wherein the organic semiconductor single crystal material gradually gains more and more attention due to ultrahigh electrical performance. However, the organic semiconductor single crystal is mainly researched in laboratories, and the industrial development is slow, because the organic semiconductor single crystal material with good appearance is mainly grown by a solution method and then transferred to a solid substrate for device preparation, which inevitably causes the problems of disordered crystal arrangement, poor contact with the substrate, and the like, and on the other hand, the organic semiconductor material is incompatible with the photolithography and other technologies used in the current industrial production because the solvent can destroy the molecular arrangement, further affecting the industrial application of the organic semiconductor. The invention provides a method for preparing an orientation organic crystal array and a device array by an outer edge method, which aims at solving the problems, improves the response of an organic semiconductor device, provides a foundation for organic semiconductor integrated devices and industrial production, and has huge development potential and wide market application prospect.
Disclosure of Invention
Technical problem to be solved by the invention
The invention aims to provide an oriented organic crystal array with high electrical property, a device array and a preparation method thereof.
Means for solving the technical problem
In order to solve the problems, the invention provides an oriented organic crystal array, a device array and a preparation method thereof.
According to an embodiment of the present invention, there is provided a method for producing an oriented organic semiconductor crystal array by an epitaxy method, comprising the steps of:
covering a highly oriented polymer film obtained by a melt film drawing method or a film rolling method on a silicon substrate to serve as a dielectric layer;
spin coating the functional organic semiconductor material on the surface of the oriented polymer film;
the highly oriented organic semiconductor crystal array is obtained by a solution annealing method.
One embodiment is that, among others, the constituent materials of the oriented polymer film include but are not limited to PE, PP, PVDF, PTFE.
One embodiment is wherein the organic semiconductor material includes, but is not limited to, oligothiophene derivatives, benzo [ b ] benzo [4,5] thieno [2,3-d ] thiophene derivatives, biphenyl derivatives.
According to a second aspect of the present invention, there is provided a method for producing an array of oriented organic semiconductor devices by an epitaxial method, which uses the above-described organic semiconductor crystal array to produce electrodes by a copper mesh mask method.
According to a third aspect of the present invention, there is provided an array of oriented organic semiconductor crystals prepared by an epitaxy method, comprising: the high-molecular film with high orientation is arranged on the substrate; the surface of the polymer film is provided with a functional organic semiconductor material layer which is subjected to annealing treatment.
One embodiment is that, among others, the constituent materials of the oriented polymer film include but are not limited to PE, PP, PVDF, PTFE.
One embodiment is wherein the organic semiconductor material includes, but is not limited to, oligothiophene derivatives, benzo [ b ] benzo [4,5] thieno [2,3-d ] thiophene derivatives, biphenyl derivatives.
In one embodiment, the oriented polymeric film is produced by a melt draw-down process or a roll-down process.
The invention has the advantages of
The method for preparing the oriented organic crystal array and the device array by the outer edge method can improve the response of the organic semiconductor device, provides a foundation for organic semiconductor integrated devices and industrial production, and has huge development potential and wide market application prospect.
Further features of the present invention will become apparent from the following description of exemplary embodiments.
Drawings
FIG. 1 is a schematic diagram of the structure of an array of patented devices of the invention; the reference number in the figure is 1, gold electrode, 2, organic semiconductor crystal array, 3, high orientation high molecular film, 4, substrate.
FIG. 2 is an atomic force microscope image of example 1.
FIG. 3 is a time resolved polarization microscope alignment crystal observation in example 2.
FIG. 4 is an array of oriented organic semiconductor single-crystal devices produced in example 3.
Detailed Description
One embodiment of the present disclosure will be specifically described below, but the present disclosure is not limited thereto.
Example 1: growing BTBT-C8 molecular single crystal by utilizing oriented iPP film
Covering a highly oriented iPP film on the surface of a silicon wafer by a melt film drawing method, spin-coating a 5mg/mLBTBT-C8 solution on the surface of the iPP film, placing the material in a chloroform steam environment, annealing the material for 5 hours by a solvent, and observing by using an atomic force microscope to find that a single crystal with good appearance is formed, as shown in figure 2.
Example 2: polarization microscope observation of BTBT-C8 molecular single crystal
Covering a highly oriented iPP film on the surface of a silicon wafer by a melt film drawing method, spin-coating a 5mg/mLBTBT-C8 solution on the surface of the iPP film, placing the material in a chloroform steam environment for solvent annealing for 4h, and observing the appearance of a sample by using a polarization microscope during annealing to find that the single crystal has higher orientation.
Example 3: preparation of BTBT-C8 molecular orientation crystal array
Covering a highly oriented iPP film on the surface of a silicon wafer by a melt film drawing method, spin-coating a 5mg/mLBTBT-C8 solution on the surface of the iPP film, placing the material in a chloroform steam environment for solvent annealing for 4h, covering a copper net, thermally evaporating a gold electrode, preparing a device array as shown in figure 4, and measuring the performance of the organic field effect transistor. The average mobility of the device is obtained to be 3.2cm2Vs, maximum mobility 6.2cm2Vs, on-off ratio 105. The industrial applicability of the organic crystal array and the device array provided by the invention provides an experimental basis for organic semiconductor integrated devices and industrial production, and has huge development potential and wide market application prospect.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily made by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A method for preparing an oriented organic semiconductor crystal array by an outer edge method is characterized by comprising the following steps:
covering a highly oriented polymer film obtained by a melt film drawing method or a film rolling method on a silicon substrate to serve as a dielectric layer;
spin coating the functional organic semiconductor material on the surface of the oriented polymer film;
the highly oriented organic semiconductor crystal array is obtained by a solution annealing method.
2. The method of claim 1, wherein the oriented polymer film is composed of materials including but not limited to PE, PP, PVDF, PTFE.
3. The method according to claim 1 or 2, wherein the organic semiconductor material comprises but is not limited to oligothiophene derivatives, benzo [ b ] benzo [4,5] thieno [2,3-d ] thiophene derivatives, biphenyl derivatives.
4. A method for producing an array of alignment organic semiconductor devices by the fringe method, characterized in that electrodes are produced by the copper mesh mask method using the organic semiconductor crystal array of any one of claims 1 to 3.
5. An array of aligned organic semiconductor crystals prepared by the epitaxial method, comprising: the high-molecular film with high orientation is arranged on the substrate; the surface of the polymer film is provided with a functional organic semiconductor material layer which is subjected to annealing treatment.
6. The method of claim 5, wherein the oriented polymer film is composed of materials including but not limited to PE, PP, PVDF, PTFE.
7. The method of claim 5 or 6, wherein the organic semiconductor material comprises but is not limited to oligothiophene derivatives, benzo [ b ] benzo [4,5] thieno [2,3-d ] thiophene derivatives, biphenyl derivatives.
8. A process according to any one of claims 5 to 7, wherein the oriented polymeric film is produced by a melt draw process or a roll mill process.
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| CN201910948299.6A CN110660913A (en) | 2019-10-08 | 2019-10-08 | Oriented organic crystal array, device array and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910948299.6A CN110660913A (en) | 2019-10-08 | 2019-10-08 | Oriented organic crystal array, device array and preparation method thereof |
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| CN110660913A true CN110660913A (en) | 2020-01-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537931A (en) * | 2022-09-02 | 2022-12-30 | 北京仿生界面科学未来技术研究院 | Solvent-free organic micro-single crystal array and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101230149A (en) * | 2007-12-29 | 2008-07-30 | 中国科学院化学研究所 | Two-dimensional ordered organic semiconductor composite nano membrane as well as special substrate and preparation method thereof |
| CN103451698A (en) * | 2013-09-03 | 2013-12-18 | 北京化工大学 | Preparation method of high-orientation conductive polymer film, prepared film and application thereof |
| CN108318148A (en) * | 2018-02-05 | 2018-07-24 | 北京大学深圳研究生院 | Organic transistor temperature sensor based on graphite base and preparation method thereof |
| CN108447990A (en) * | 2018-02-23 | 2018-08-24 | 南京大学 | The method for promoting organic field effect tube device performance based on monomolecular semiconductive thin film |
-
2019
- 2019-10-08 CN CN201910948299.6A patent/CN110660913A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101230149A (en) * | 2007-12-29 | 2008-07-30 | 中国科学院化学研究所 | Two-dimensional ordered organic semiconductor composite nano membrane as well as special substrate and preparation method thereof |
| CN103451698A (en) * | 2013-09-03 | 2013-12-18 | 北京化工大学 | Preparation method of high-orientation conductive polymer film, prepared film and application thereof |
| CN108318148A (en) * | 2018-02-05 | 2018-07-24 | 北京大学深圳研究生院 | Organic transistor temperature sensor based on graphite base and preparation method thereof |
| CN108447990A (en) * | 2018-02-23 | 2018-08-24 | 南京大学 | The method for promoting organic field effect tube device performance based on monomolecular semiconductive thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537931A (en) * | 2022-09-02 | 2022-12-30 | 北京仿生界面科学未来技术研究院 | Solvent-free organic micro-single crystal array and preparation method thereof |
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