CN110649172A - Light emitting device and display apparatus - Google Patents
Light emitting device and display apparatus Download PDFInfo
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- CN110649172A CN110649172A CN201910935140.0A CN201910935140A CN110649172A CN 110649172 A CN110649172 A CN 110649172A CN 201910935140 A CN201910935140 A CN 201910935140A CN 110649172 A CN110649172 A CN 110649172A
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
Abstract
The application provides a light emitting device and a display apparatus. The light emitting device includes: the light-emitting diode comprises a substrate, an anode, a hole injection layer, a first hole transport layer, a first electron blocking layer, a first light-emitting layer, a first electron transport layer, an electron injection layer and a cathode which are arranged in sequence. The light emitting device further includes: and the first buffer barrier layer is arranged between the first light-emitting layer and the electron injection layer and is used for blocking preset metal atoms from diffusing to the first light-emitting layer in the light-emitting device. In the application, the first buffer blocking layer can be used for blocking preset metal atoms (for example, lithium atoms) from diffusing to the first light emitting layer of the light emitting device and the interface between the first light emitting layer and other layers, so that the probability of forming a quenching center and influencing the characteristics of the interface by the preset metal atoms is greatly reduced, and charges can pass through the first buffer blocking layer through a tunneling effect, so that the light emitting efficiency and the service life of the light emitting device can be improved while the charge transmission of the light emitting device is not influenced.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting device and a display device.
Background
With the progress of science and technology, the lcd has gradually replaced the conventional bulky crt display due to its small size and light weight, and has been widely used in electronic products such as monitors, notebook computers, flat-panel tvs, and digital cameras.
The conventional Organic Light Emitting Diode (OLED) display device has a series of excellent characteristics, such as self-Light Emitting function, no need of a backlight module, high contrast, high definition, etc., and thus has become one of the important development directions of the new generation of flat panel display devices, and thus has received increasing attention. Although OLED manufacturing technology is mature, the performance of light emitting devices in OLEDs is still a key issue that limits their applicability to large-scale applications and competitiveness.
Specifically, factors affecting the light emitting efficiency of a light emitting device in an OLED are generally that the presence of a quenching center in the light emitting device causes an increase in the proportion of non-emission of excitons, and the like. Therefore, how to make the OLED light-emitting material exert its maximum performance in the device is under further development.
The factors that influence the lifetime of a light emitting device in an OLED are mainly: the interface formed between the two materials in the device is unstable, and the organic electroluminescent device usually comprises an Indium Tin Oxide (ITO) transparent conductive anode/light-emitting layer; light emitting layer/light emitting layer; the service life of the device can be influenced by the characteristic change and failure of any interface caused by the working of the light-emitting device, and the high-activity metal atoms are diffused into the light-emitting layer to form light-emitting center quenching, so that the service life of the device is rapidly reduced.
Disclosure of Invention
In view of this, the present application provides a light emitting device and a display apparatus, which solve the technical problem in the prior art that the light emitting efficiency or the lifetime of the light emitting device is low due to the active metal atoms diffusing into the light emitting layer or the interface between the light emitting layer and other layers, forming a quenching center or affecting the interface characteristics.
In order to solve the above problem, the embodiments of the present application mainly provide the following technical solutions:
in a first aspect, embodiments of the present application disclose a light emitting device, comprising: the organic light-emitting diode comprises a substrate, an anode, a hole injection layer, a first hole transport layer, a first electron blocking layer, a first light-emitting layer, a first electron transport layer, an electron injection layer and a cathode which are arranged in sequence;
the light emitting device further includes: and the first buffer barrier layer is arranged between the first light-emitting layer and the electron injection layer and is used for blocking preset metal atoms from diffusing to the first light-emitting layer in the light-emitting device.
Optionally, the first light emitting layer is at least one of a first color light emitting layer, a second color light emitting layer, or a third color light emitting layer.
Optionally, an N-type charge generation layer is disposed between the first electron transport layer and the first buffer blocking layer, and a P-type charge generation layer, a second hole transport layer, a second electron blocking layer, a second light emitting layer, and a second electron transport layer are sequentially disposed between the first buffer blocking layer and the electron injection layer.
Optionally, the light emitting device further comprises: an N-type charge generation layer, a P-type charge generation layer, a second hole transport layer, a second electron blocking layer, a second light emitting layer and a second electron transport layer are sequentially arranged between the first buffer blocking layer and the electron injection layer.
Optionally, the light emitting device further comprises: a second buffer blocking layer disposed between the N-type charge generation layer and the P-type charge generation layer.
Optionally, if the material of the first buffer barrier layer and the material of the second buffer barrier layer are both the inorganic material, the inorganic material is one of molybdenum trioxide, zirconium oxide, strontium oxide, lithium fluoride, sodium chloride, and potassium chloride.
Optionally, the thickness of the first buffer blocking layer and the second buffer blocking layer is 0.1nm to 20 nm.
Optionally, the thickness of the first buffer blocking layer and the second buffer blocking layer is 1nm to 5 nm.
Optionally, the first light emitting layer is a first color light emitting layer, and the second light emitting layer includes a second color light emitting layer and a third color light emitting layer.
Optionally, the preset metal atom is at least one of lithium, sodium, potassium, rubidium, cesium or ytterbium.
Optionally, the anode is made of indium tin oxide and the cathode is made of aluminum; or
The anode is made of silver and indium tin oxide mixed, and the cathode is made of indium zinc oxide or magnesium and silver mixed.
In a second aspect, an embodiment of the present application discloses a display device, including: the light-emitting device described in the first aspect.
By means of the technical scheme, the technical scheme provided by the embodiment of the application at least has the following advantages:
because the first buffer blocking layer is arranged between the first light emitting layer and the electron injection layer, the first buffer blocking layer can block preset metal atoms (such as lithium atoms) from diffusing to the first light emitting layer in the light emitting device and the interface between the first light emitting layer and other layers, the probability that the preset metal atoms migrate to the light emitting layer or the interface between the light emitting layer and other layers forms a quenching center can be greatly reduced, the probability that the preset metal atoms migrate to the interface between the light emitting layer and other layers to influence the interface characteristics can be greatly reduced, and charges can penetrate through the first buffer blocking layer to the light emitting layer through a tunneling effect, so that excitons can be formed; therefore, the probability of forming quenching centers can be reduced while the charge transmission of the light-emitting device is not influenced, the light-emitting efficiency of the light-emitting device is improved, the probability of influencing the interface characteristics of the light-emitting layer can be reduced, and the service life of the light-emitting device can be prolonged.
The foregoing description is only an overview of the technical solutions of the embodiments of the present application, and the embodiments of the present application can be implemented according to the content of the description in order to make the technical means of the embodiments of the present application more clearly understood, and the detailed description of the embodiments of the present application will be given below in order to make the foregoing and other objects, features, and advantages of the embodiments of the present application more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the alternative embodiments. The drawings are only for purposes of illustrating alternative embodiments and are not to be construed as limiting the embodiments of the present application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural view of a first embodiment of a light-emitting device of the present application;
fig. 2 is a schematic structural view of a second embodiment of a light-emitting device of the present application;
fig. 3 is a schematic structural view of a third embodiment of a light-emitting device of the present application;
FIG. 4 is a graph comparing lifetime of light emitting devices of the present application;
fig. 5 is a flowchart of a method of manufacturing a light emitting device according to an embodiment of the present application.
The reference numerals are introduced as follows:
1-a light emitting device; 2-a substrate; 3-an anode; 4-a hole injection layer; 5-a first hole transport layer; 6-a first electron blocking layer; 7-a first light emitting layer; 8-a first electron transport layer; 9-electron injection layer; 10-a cathode;
11-a first buffer barrier; a 12-N type charge generation layer; 13-P type charge generation layer; 14-a second hole transport layer; 15-a second electron blocking layer; 16-a second light-emitting layer; 17-a second electron transport layer; 18-second buffer barrier.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It is to be understood that the term "and/or" as used herein is intended to include all or any and all combinations of one or more of the associated listed items.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The inventors of the present application have found that since lithium atoms in a conventional light emitting device migrate to an interface of a light emitting layer or in a light emitting layer to form quenching centers, the affected position is a light emitting layer, and a position where the light emitting layer is in contact with other adjacent layers (e.g., an electron blocking layer). This is because lithium is an active metal, and after a quenching center is formed, the energy for light emission of the original luminescent molecule is gathered to the quenching center and released in the form of heat radiation, which causes a roll-off of the luminous efficiency of the device and reduces the service life of the light emitting device.
In a first aspect, the present application discloses a light emitting device 1, the light emitting device 1 comprising: the organic light-emitting diode comprises a substrate 2, an anode 3, a hole injection layer 4, a first hole transport layer 5, a first electron blocking layer 6, a first light-emitting layer 7, a first electron transport layer 8, an electron injection layer 9 and a cathode 10 which are arranged in sequence. The light emitting device 1 further includes: and a first buffer blocking layer 11 disposed between the first light emitting layer 7 and the electron injection layer 9, for blocking diffusion of a predetermined metal atom to the first light emitting layer 7 in the light emitting device 1.
Because the first buffer blocking layer is arranged between the first light emitting layer and the electron injection layer, the first buffer blocking layer can block preset metal atoms (such as lithium atoms) from diffusing to the first light emitting layer in the light emitting device and interfaces between the first light emitting layer and other layers, the probability that the preset metal atoms migrate to the light emitting layer or the interfaces between the light emitting layer and other layers form a quenching center can be greatly reduced, the probability that the preset metal atoms migrate to the interfaces between the light emitting layer and other layers to influence the interface characteristics can be greatly reduced, and charges can penetrate through the first buffer blocking layer to the light emitting layer through a tunneling effect, so that excitons can be formed conveniently; therefore, the probability of forming quenching centers can be reduced while the charge transmission of the light-emitting device is not influenced, the light-emitting efficiency of the light-emitting device is improved, the probability of influencing the interface characteristics of the light-emitting layer can be reduced, and the service life of the light-emitting device can be prolonged.
Optionally, the first light emitting layer 7 is one of a first color light emitting layer, a second color light emitting layer, or a third color light emitting layer. Alternatively, the first light-emitting layer 7 is at least one of a blue light-emitting layer, a red light-emitting layer, or a green light-emitting layer. Therefore, the light emitting device of the present application can be used as a monochromatic light emitting device.
Fig. 1 to 3 show a first embodiment, a second embodiment, and a third embodiment of a light emitting device of an embodiment of the present application, respectively. In the first embodiment of the present application, the N-type charge generation layer 12 is provided between the first electron transport layer 8 and the first buffer blocking layer 11, and the P-type charge generation layer 13, the second hole transport layer 14, the second electron blocking layer 15, the second light emitting layer 16, and the second electron transport layer 17 are provided in this order between the first buffer blocking layer 11 and the electron injection layer 9.
Optionally, in the second embodiment of the present application, the light emitting device 1 further includes: an N-type charge generation layer 12, a P-type charge generation layer 13, a second hole transport layer 14, a second electron blocking layer 15, a second light emitting layer 16, and a second electron transport layer 17 are sequentially provided between the first buffer blocking layer 11 and the electron injection layer 9.
Optionally, in a third embodiment of the present application, the light emitting device 1 further includes: and a second buffer blocking layer 18 disposed between the N-type charge generation layer 12 and the P-type charge generation layer 13.
Alternatively, if the materials of the first buffer barrier layer 11 and the second buffer barrier layer 18 are both inorganic materials, the inorganic material is one of molybdenum trioxide, zirconium oxide, strontium oxide, lithium fluoride, sodium chloride, and potassium chloride. Lithium fluoride is specifically a lithium fluoride compound, and unlike lithium atoms, lithium ions in the lithium fluoride compound have strong binding force with fluoride ions, so that the lithium ions are difficult to diffuse independently.
Alternatively, in the first, second, and third embodiments of the light emitting device of the embodiment of the present application, the thicknesses of the first buffer blocking layer 11 and the second buffer blocking layer 18 are each greater than or equal to 0.1nm and less than or equal to 20 nm.
Alternatively, the thickness of each of the first buffer blocking layer 11 and the second buffer blocking layer 18 is greater than or equal to 1nm and less than or equal to 5 nm.
Alternatively, the first light-emitting layer 7 is a first color light-emitting layer, and the second light-emitting layer 16 includes second and third color light-emitting layers. Optionally, the first light-emitting layer 7 is a blue light-emitting layer; the second light-emitting layer 16 may be a doped light-emitting layer that emits both red light and green light, or may include a red light-emitting layer and a green light-emitting layer stacked. Optionally, the predetermined metal atom in this application is an active metal atom, and the active metal atom may be at least one of lithium, sodium, potassium, rubidium, cesium, or ytterbium. However, it is obvious to those skilled in the art that the first buffer blocking layer 11 and the second buffer blocking layer 18 may be other kinds of active metal atoms.
Alternatively, in order to be suitable for a bottom-emitting OLED structure, the anode 3 of the embodiment of the present application may be made of indium tin oxide, and the cathode 10 may be made of aluminum. In addition, to be suitable for a top-emitting OLED structure, the anode 3 may be made of a mixture of silver and indium tin oxide, and the cathode 10 may be made of indium zinc oxide, or magnesium mixed with silver.
In the first, second, and third embodiments of the light emitting device of the embodiment of the present application, the substrate 2 is a glass substrate, the anode 3 is an ito layer, and the ito layer has a thickness of 0.5 nm to 1000 nm. In one embodiment, the thickness of the anode 3 may be 0.5-10 nanometers. In the present embodiment, the thickness of the anode 3 is 150 nm. Of course, the material and the thickness may be different according to different requirements, and the anode material in contact with the OLED organic material layer may be a transparent conductive oxide such as indium tin oxide/indium zinc oxide, or a metal material such as aluminum/molybdenum/silver.
The hole injection layer 4 is HATCN (Dipyrazino [2,3-f:2',3' -h ] quinoline-2, 3,6,7,10,11-hexacarbonitrile) selected and has a thickness in the range of 1nm to 30 nm. In the present embodiment, the thickness of the hole injection layer 4 is 10 nm.
The first hole transport layer 5 is selected from NPB (N, N '-bis (phenyl-1-yl) -N, N' -bis (phenyl) -benzidine) and has a thickness in the range of 10 nm to 200 nm. In the present embodiment, the thickness of the first hole transport layer 5 is 35 nm.
The first electron blocking layer 6 is selected from Ir (ppz)3(Tris (phenylpyrazole) iridium) and has a thickness of 2 nm.
The host of the blue light emitting layer is MAND (2-methyl-9,10-bis (naphthalene-2-yl) anthracene), the guest of the blue light emitting layer is DSA-Ph (1-4-di- [4- (N, N-diphenyl) amino ] styryl-benzene), and the thickness of the blue light emitting layer is in the range of 20 nm to 80 nm, in this embodiment, the thickness of the blue light emitting layer is 30 nm and the doping percentage is 5%.
The material of the second electron blocking layer 15 is BCP (2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline).
The material of the first electron transport layer 8 and the second electron transport layer 17 is selected from Bphen (4,7-diphenyl-1, 10-phenonthroline), and the thickness of the first electron transport layer 8 and the second electron transport layer 17 is in the range of 10 nm to 50 nm. In this embodiment, the thickness of the first electron transport layer 8 is 17 nm, and the thickness of the second electron transport layer 17 is 25 nm.
The host material of the red light emitting layer is NPB, the guest material (i.e., the dopant material) of the red light emitting layer is DCJTB (4- (cyclomethiylene) -2-tert-butyl-6- (1,1,7, 7-tetramethyljunolidin-4-y l-vinyl) -4h-pyran), and the thickness of the red light emitting layer is in a range of 0.5 nm to 80 nm. In the present example, the thickness of the red light emitting layer was 10 nm and the doping percentage was 2%.
The host material of the green light emitting layer is CBP (4,4'-Bis (9-carbazolyl) -1,1' -biphenyl), the guest material of the green light emitting layer is Ir (ppy)3(Tris (2-phenylpyridine) iridium), the thickness range of the green light emitting layer is 10-50 nm, and the doping concentration range is 3-20%. In the present embodiment, the thickness of the green light emitting layer was 15 nm and the doping percentage was 8%.
The material of the electron injection layer 9 is selected to be lithium fluoride (LiF), and the thickness of the electron injection layer 9 is in the range of 0.1nm to 5 nm, in this embodiment, the thickness of the electron injection layer 9 is 1 nm.
Aluminum (Al) is selected as a material of the cathode 10, and the thickness of the cathode 10 is in a range of 30 nm to 300 nm. In the present embodiment, the thickness of the cathode 10 is 120 nm.
Fig. 4 shows a lifetime comparison graph of a light emitting device of the present application. As shown in fig. 4, the reference device refers to an OLED device of a conventional structure, and the luminance vs. time trend of the OLED device of the conventional structure is represented by a solid curve, and the luminance vs. time trend of the light emitting device of the present application is represented by a dotted curve. Compared with the OLED device with the existing structure, the light-emitting device has the advantages that the light-emitting efficiency and the service life are obviously improved, but the voltage is not obviously changed, so that the effect of improving the exciton utilization efficiency and the instability of an organic/organic interface is realized by adding the improving layer.
In a second aspect, embodiments of the present application disclose a display apparatus comprising the light emitting device of the first aspect. Since the display apparatus of the second aspect includes the light emitting device of the first aspect, the display apparatus has the same advantageous technical effects as the light emitting device. Therefore, the advantageous effects of the display device of the second aspect will not be repeated herein.
In a third aspect, fig. 5 illustrates a method for manufacturing a light emitting device disclosed in the embodiments of the present application. The manufacturing method comprises the following steps:
s101: a substrate 2 having an anode 3 is provided.
S102: a hole injection layer 4, a first hole transport layer 5, a first electron blocking layer 6, and a first light emitting layer 7 are sequentially disposed on the side of the anode 3 away from the substrate 2.
S103: a first electron transport layer 8, a first buffer barrier layer 11, an electron injection layer 9 and a cathode 10 are sequentially arranged on one side, far away from the first electron barrier layer 6, of the first light-emitting layer 7; alternatively, the first buffer layer 11, the first electron transport layer 8, the electron injection layer 9, and the cathode 10 are provided in this order on the side of the first light-emitting layer 7 away from the first electron blocking layer 6.
Since the first buffer blocking layer 11 is disposed between the first light emitting layer 7 and the electron injection layer 9, the first buffer blocking layer 11 may be used to block preset metal atoms (e.g., lithium atoms) from diffusing into the first light emitting layer 7 in the light emitting device, and charges may pass through the first buffer blocking layer 7 by a tunneling effect, so that the lifetime of the light emitting device is improved while charge transport of the light emitting device is not affected.
Optionally, in the first embodiment, after the disposing the first electron transport layer 8 and before the disposing the first buffer blocking layer 11, the method further includes: an N-type charge generation layer 12 is provided on the first electron transport layer 8 on the side away from the first light-emitting layer 7; and after the first buffer barrier 11 layer is provided and before the electron injection layer 9 is provided, further comprising: on the side of the first buffer blocking layer 11 remote from the first light-emitting layer 7, a P-type charge generation layer 13, a second hole transport layer 14, a second electron blocking layer 15, a second light-emitting layer 16, and a second electron transport layer 17 are provided in this order.
In the second embodiment, after the first electron transport layer 8 and the first buffer blocking layer 11 are sequentially provided and before the electron injection layer 9 is provided, the method further includes: on the side of the first buffer blocking layer 11 remote from the first light-emitting layer 7, an N-type charge generation layer 12, a P-type charge generation layer 13, a second hole transport layer 14, a second electron blocking layer 15, a second light-emitting layer 16, and a second electron transport layer 17 are provided in this order.
In the third embodiment, after the first electron transport layer 8 and the first buffer blocking layer 11 are sequentially provided and before the electron injection layer 9 is provided, the method further includes: on the side of the first buffer blocking layer 11 remote from the first light-emitting layer 7, an N-type charge generation layer 12, a second buffer blocking layer 18, a P-type charge generation layer 13, a second hole transport layer 14, a second electron blocking layer 15, a second light-emitting layer 16, and a second electron transport layer 17 are provided in this order.
Specifically, indium tin oxide (sheet resistance of indium tin oxide) is used<30 omega), forming a pattern electrode of indium tin oxide by photoetching, then cleaning the glass substrate with indium tin oxide in an ultrasonic environment in deionized water, acetone and absolute ethyl alcohol in sequence, blow-drying and carrying out oxygen ion treatment. Finally, the processed substrate is placed in an evaporation chamber until the vacuum degree is lower than 5 multiplied by 10-4And after Pa, sequentially depositing the coatings on the indium tin oxide surface in a vacuum thermal evaporation mode.
In the above manufacturing process, except for aluminum using a metal cathode mask (metal mask) and an evaporation rate of 0.3nm/s (nanometers per second), the remaining layers all use an open mask (open mask) and an evaporation rate of 0.1 nm/s; the light emitting area of the light emitting device was 3mm × 3mm (millimeter).
The beneficial effects obtained by applying the embodiment of the application comprise:
because the first buffer blocking layer is arranged between the first light emitting layer and the electron injection layer, the first buffer blocking layer can block preset metal atoms (such as lithium atoms) from diffusing to the first light emitting layer in the light emitting device and the interface between the first light emitting layer and other layers, the probability that the preset metal atoms migrate to the light emitting layer or the interface between the light emitting layer and other layers forms a quenching center can be greatly reduced, the probability that the preset metal atoms migrate to the interface between the light emitting layer and other layers to influence the interface characteristics can be greatly reduced, and charges can penetrate through the first buffer blocking layer to the light emitting layer through a tunneling effect, so that excitons can be formed; therefore, the probability of forming quenching centers can be reduced while the charge transmission of the light-emitting device is not influenced, the light-emitting efficiency of the light-emitting device is improved, the probability of influencing the interface characteristics of the light-emitting layer can be reduced, and the service life of the light-emitting device can be prolonged.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (11)
1. A light emitting device (1) comprising: the light-emitting diode comprises a substrate (2), an anode (3), a hole injection layer (4), a first hole transport layer (5), a first electron blocking layer (6), a first light-emitting layer (7), a first electron transport layer (8), an electron injection layer (9) and a cathode (10) which are arranged in sequence;
the light-emitting device (1) is characterized by further comprising: a first buffer barrier layer (11) disposed between the first light emitting layer (7) and the electron injection layer (9) for blocking diffusion of a predetermined metal atom to the first light emitting layer in the light emitting device (1).
2. A light emitting device (1) according to claim 1, characterized in that the first light emitting layer (7) is at least one of a first color light emitting layer, a second color light emitting layer or a third color light emitting layer.
3. A light-emitting device (1) according to claim 1, characterized in that an N-type charge generation layer (12) is provided between the first electron transport layer (8) and the first buffer blocking layer (11), and a P-type charge generation layer (13), a second hole transport layer (14), a second electron blocking layer (15), a second light-emitting layer (16), and a second electron transport layer (17) are provided in this order between the first buffer blocking layer (11) and the electron injection layer (9).
4. A light emitting device (1) according to claim 1, characterized by further comprising: an N-type charge generation layer (12), a P-type charge generation layer (13), a second hole transport layer (14), a second electron blocking layer (15), a second light emitting layer (16) and a second electron transport layer (17) are sequentially arranged between the first buffer blocking layer (11) and the electron injection layer (9).
5. A light emitting device (1) according to claim 4, characterized by further comprising: a second buffer blocking layer (18) disposed between the N-type charge generation layer (12) and the P-type charge generation layer (13).
6. A light emitting device (1) according to claim 5, characterized in that if the material of both the first buffer barrier layer (11) and the second buffer barrier layer (18) is an inorganic material, the inorganic material is one of molybdenum trioxide, zirconium oxide, strontium oxide, lithium fluoride, sodium chloride, potassium chloride.
7. A light emitting device (1) according to claim 5, characterized in that the thickness of the first buffer barrier (11) and the second buffer barrier (18) is between 0.1nm and 20 nm.
8. A light emitting device (1) according to claim 3, characterized in that the first light emitting layer (7) is a first color light emitting layer and the second light emitting layer comprises a second color and a third color light emitting layer.
9. A light emitting device (1) according to claim 1, characterized in that said predetermined metal atoms are at least one of lithium, sodium, potassium, rubidium, cesium or ytterbium.
10. A light-emitting device (1) according to claim 1, characterized in that the anode (3) is made of indium tin oxide and the cathode (10) is made of aluminum; or
The anode (3) is made of a mixture of silver and indium tin oxide, and the cathode (10) is made of indium zinc oxide or a mixture of magnesium and silver.
11. A display device, comprising: a light emitting device (1) according to any of claims 1-10.
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