CN110649151A - Patterned N, P type thermoelectric film, preparation method thereof and flexible film thermoelectric device - Google Patents
Patterned N, P type thermoelectric film, preparation method thereof and flexible film thermoelectric device Download PDFInfo
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- CN110649151A CN110649151A CN201910978814.5A CN201910978814A CN110649151A CN 110649151 A CN110649151 A CN 110649151A CN 201910978814 A CN201910978814 A CN 201910978814A CN 110649151 A CN110649151 A CN 110649151A
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The invention discloses a graphical N, P type thermoelectric film, a preparation method thereof and a flexible film thermoelectric device, wherein the selected thermoelectric material is inorganic powder Bi2SexTe3‑x(x =0.1 ~ 1) and BixSb2‑ xTe3Compared with the preparation processes such as magnetron sputtering, calcination and the like, the preparation method enables the thermoelectric material deposited on the substrate to be controllable in shape, simple in process and low in cost, and the obtained film has good flexibility.
Description
Technical Field
The invention relates to the technical field of low-cost flexible thermoelectric thin films and device preparation, in particular to a graphical N, P-type thermoelectric thin film and a preparation method thereof and a flexible thin film thermoelectric device.
Background
With the development of intellectualization and informatization of the modern society, wearable electronic equipment gradually enters the lives of people and becomes an indelible part of the intelligent society. However, most of the current wearable products need to be powered by an external power source such as a battery, which puts stress on the environment due to recycling of the battery on one hand and wastes energy on the other hand. One promising solution is to use thermoelectric materials to fabricate thermoelectric devices to achieve self-powering of electronic devices. Thermoelectric materials, also known as thermoelectric materials, can convert thermal energy directly into electrical energy. And heat energy is ubiquitous in real life, for example, the wearable equipment can be powered by the temperature difference between the skin and the outside. Thermoelectric materials are classified into N-type and P-type, which are different in that the directions of potential differences generated when temperature differences in the same direction are applied are opposite. In practical applications, a thermoelectric device is usually obtained by connecting an N-type thermoelectric material and a P-type thermoelectric material in series.
Thermoelectric power generation is a novel and environment-friendly power supply mode. The material with the best thermoelectric performance in the current practical application is bismuth telluride alloy and a dopant thereof, and the bismuth telluride is doped with tin (Sn) and antimony (Sb) respectively to obtain an N-type thermoelectric material and a P-type thermoelectric material correspondingly. Tellurides have been commercialized to address small-range thermoelectric generation or thermoelectric refrigeration in life. The common method of the thermoelectric device is to alternately connect N-P type thermoelectric materials by a pi-shaped structure and realize application by fixed packaging. There are two major problems at present: firstly, the cost is high, and the thermoelectric conversion rate is low, so that large-scale application cannot be realized; secondly, the thermoelectric device is a non-flexible device and cannot be bent, so that the thermoelectric device cannot meet the application of different scenes. Currently, flexible thermoelectric devices have been developed, most of which are made based on organic thermoelectric materials. However, the organic thermoelectric material has a low thermoelectric conversion efficiency and is inferior to inorganic thermoelectric materials represented by telluride and the like in performance. In view of this, the inorganic thermoelectric material is expected to realize large-scale application of thermoelectric devices with its high thermoelectric conversion efficiency. However, inorganic thermoelectric materials are generally brittle, and flexible devices need to be prepared by using flexible substrates to meet the requirements of different applications. However, at present, the bonding force between the thermoelectric material and the substrate is very weak, the related equipment is generally expensive, the preparation process is complex, and it is difficult to integrate the N-type and P-type thermoelectric materials on the same substrate. Therefore, the method for preparing the inorganic flexible thermoelectric device with low cost, simplicity and quickness is a main stream of current research.
Disclosure of Invention
The invention aims to provide a patterned N, P type flexible thermoelectric thin film prepared in a vacuum-assisted suction filtration mode and a preparation method thereof, which are used for preparing a low-cost flexible thermoelectric device. The method has simple steps and low cost, does not need large-scale equipment, and the prepared thermoelectric film has high reliability and good flexibility and can realize large-scale production.
The specific technical scheme for realizing the purpose of the invention is as follows:
a preparation method of a patterned N, P-type thermoelectric film comprises the following specific steps:
step 1: adding Bi2SexTe3-x(x =0.1 ~ 1) dispersing the powder in deionized water, and adding a binder to obtain an N-type thermoelectric material dispersion liquid, BixSb2-xTe3(x =0.1 ~ 0.8.8) dispersing the powder in deionized water, adding a binder to obtain a P-type thermoelectric material dispersion liquid, wherein Bi is2SexTe3-x(x =0.1 ~ 1) and BixSb2-xTe3(x =0.1 ~ 0.8.8) in a concentration range of 5 ~ 10 mg/mL and a binder in a concentration range of 0.2 ~ 1.0.0 mg/mL;
and step 3: taking the vacuum auxiliary pumping filtration membrane in the step 2 as a filtration membrane of a pumping filtration device, pouring the N-type thermoelectric material dispersion liquid in the step 1 into the pumping filtration device for pumping filtration to obtain a compound of the N-type thermoelectric material and the vacuum auxiliary pumping filtration membrane;
and 5: taking a piece of microporous filter paper, cutting the piece of microporous filter paper into a pattern, and attaching the piece of microporous filter paper serving as a mask to the N-type thermoelectric thin film obtained in the step 4; and (3) replacing the N-type thermoelectric material dispersion liquid in the step (3) with the P-type thermoelectric material dispersion liquid, and repeating the steps (3) and (4) to obtain the patterned N, P-type thermoelectric film.
N, P type thermoelectric material dispersion liquid of step 1, powdery Bi2SexTe3-x、BixSb2-xTe3The average particle size formed after dispersion in solution is at most 10 μm.
The binder in the step 1 is sodium carboxymethyl cellulose.
A patterned N, P-type thermoelectric film made by the above method.
A flexible thin film thermoelectric device is formed by alternately connecting patterned N, P-type thermoelectric thin films in an N-P-N-P form with a conductive adhesive.
The conductive adhesive is silver paste.
Compared with the prior art, the invention has the innovation points that the membrane formed by filtering inorganic substance powder can be patterned, the N-type material and the P-type material can be deposited on the same substrate, and finally the flexible thin-film thermoelectric device can be directly connected through the conductive adhesive; the invention has the advantages of simple preparation process, low cost, strong controllability and the like. In addition, the prepared film has flexibility, can adapt to thermoelectric conversion of different surfaces, and provides possibility for future intelligent wearable equipment; the method can realize the suction filtration and film formation of thermoelectric materials mixed with different proportions and even different components, and provides a feasible idea for the research of thermoelectric films in the future.
Drawings
FIG. 1 is a schematic diagram of the preparation of thermoelectric film by suction filtration in the present invention;
FIG. 2 is a schematic view of an assembly of a thermoelectric thin film device according to the present invention;
FIG. 3 is an optical image of a thermoelectric film prepared in an example of the present invention;
fig. 4 is a cross-sectional SEM image of the thermoelectric film prepared in the example of the present invention.
Detailed Description
The following describes in detail embodiments of the present invention.
The preparation method of the graphical N, P type thermoelectric film comprises the following manufacturing steps:
referring to fig. 1, a suction filtration apparatus 1; microporous filter paper 2; a vacuum pump exhaust port 3; the mask 4 is patterned.
Step 1: weighing a certain amount of Bi2SexTe3-x(x =0.1 ~ 1) putting the powder into a beaker, adding deionized water, adding a binder, and uniformly mixing to obtain an N-type thermoelectric material dispersion liquid, weighing Bi with the same massxSb2-xTe3(x =0.1 ~ 0.8.8) powder was similarly subjected to the above-mentioned operation to obtain a dispersion of the P-type thermoelectric material, and then both dispersions were subjected to ultrasonic treatment to sufficiently disperse and dissolve the powder material, wherein Bi was contained2SexTe3-x(x =0.1 ~ 1) and BixSb2-xTe3(x =0.1 ~ 0.8.8) in a concentration range of 5 ~ 10 mg/mL, preferably but not limited to 8mg/mL, a binder in a concentration range of 0.2 ~ 1.0.0 mg/mL, preferably but not limited to 0.6mg/mL, an ultrasonic power of 100W and a time of 40 ~ 60 min.
And 2, selecting two pieces of microporous filter paper with the diameter matched with the caliber of the filter flask, wherein the aperture of the filter paper is 1 ~ 20 micrometers, preferably but not limited to 5 micrometers, performing graphical cutting treatment on one piece of the microporous filter paper and using the cut piece as a mask, not processing the other piece of the microporous filter paper, stacking the two pieces of filter paper in the order that the mask is arranged above the untreated filter paper, wetting one surfaces of the filter paper, which are in contact with each other, with deionized water, and finally closely attaching the two pieces of filter paper together.
And step 3: and (3) placing the two pieces of filter paper which are attached together and obtained in the step (2) in a suction filtration device to be used as a suction filtration membrane, pouring the N-type thermoelectric material dispersion liquid obtained in the step (1) in the suction filtration device, and suction-filtering the N-type thermoelectric powder into the suction filtration membrane.
And 4, after the suction filtration is finished, taking down the suction filtration membrane, peeling off the two layers of filter paper, leaving the lower layer of filter paper, and drying to obtain the patterned N-type thermoelectric film, wherein the drying temperature is 60 ~ 120 ℃, and the drying time is 30 ~ 60 min.
And 5: and (3) placing new patterned filter paper as a mask on the N-type thermoelectric film obtained in the step (4) and attaching the new patterned filter paper, replacing the N-type material dispersion liquid obtained in the step (3) with the P-type dispersion liquid obtained in the step (1), and repeating the operations of the step (3) and the step (4) to obtain the patterned N, P-type thermoelectric film.
Preferably, the binder in step 1 is sodium carboxymethyl cellulose.
The invention also provides a flexible thin film thermoelectric device, which is characterized in that strip N, P type thermoelectric thin films are prepared on the same filter paper in an imaging mode according to the thin film preparation method, N-type materials and P-type materials are arranged alternately and are not conducted with each other, a п type thermoelectric power generation device is assembled by a method of directly bonding conductive bonding agents according to the sequence of N-P-N-P, and the structural schematic diagram is shown in figure 2, wherein a microporous flexible thin film substrate 5, a P-type deposition area 6, a bonding area 7 and an N-type deposition area 8 are arranged in the figure.
The manufactured thermoelectric device is directly connected with the N, P type thermoelectric film through the conductive adhesive, so that the assembly efficiency and reliability of the device are improved; the device has flexibility, and can be curled to adapt to complex heat source interfaces such as tubular objects and the like, so that the purpose of thermoelectric power generation is achieved.
Examples
In the examples, the beaker used in the present invention was a normal beaker having a capacity of 50 mL, and the diameter of the suction filtration apparatus was 4 cm.
The specific implementation steps are as follows:
(1) 200mg of Bi were weighed separately2SexTe3-x(x =0.1 ~ 1) powder and BixSb2-xTe3(x =0.1 ~ 0.8.8) powder
Adding 15 mg of sodium carboxymethylcellulose into each of two beakers, adding deionized water to 25mL, fully stirring by using a glass rod, and carrying out ultrasonic treatment for 40 min by using 100W power until the mixture is uniformly dispersed to obtain Bi2SexTe3-x(x =0.1 ~ 1) powder N-type dispersion and BixSb2-xTe3(x =0.1 ~ 0.8) powder P-type dispersion.
(2) Selecting two pieces of medium-speed qualitative filter paper, cutting a 5mm wide strip and a 15mm long strip in the middle of one piece of medium-speed qualitative filter paper, using the cut filter paper as a mask, and not processing the other piece of medium-speed qualitative filter paper; then, the two pieces of filter paper are wetted by deionized water and closely attached together in the order of the mask above and the untreated filter paper below.
(3) Placing the two pieces of filter paper which are attached together and obtained in the step (2) in a suction filtration device to be used as a suction filtration membrane, pouring the N-type thermoelectric material dispersion liquid obtained in the step (1) into the suction filtration device, and suction-filtering N-type thermoelectric powder into the suction filtration membrane; and after the pumping filtration is finished, taking down the pumping filtration membrane, peeling off the two layers of filter paper, and leaving the lower layer of filter paper for drying to obtain the patterned N-type thermoelectric film. Wherein the drying temperature is 100 ℃, and the drying time is 40 min.
(4) And (4) re-attaching the N-type thermoelectric film obtained in the step (3) with a newly cut filter paper mask, putting the N-type thermoelectric film into suction filtration equipment again for suction filtration of the P-type dispersion liquid, tearing off the mask filter paper to obtain N-type P-type thermoelectric regions deposited on the same filter paper and sequentially arranged, and alternately connecting the N-type thermoelectric regions with a conductive agent to form the thermoelectric device.
The optical image of the prepared thermoelectric film is as shown in fig. 3, conforms to the patterned shape of the mask, and exhibits good flexibility. The SEM image of the film is shown in FIG. 4, which shows that the thickness of the film is about 0.76mm, and the thermoelectric powder and the filter paper form a stable structure.
Claims (6)
1. A preparation method of a patterned N, P-type thermoelectric film is characterized by comprising the following specific steps:
step 1: adding Bi2SexTe3-xDispersing the powder in deionized water, adding binder to obtain N-type thermoelectric material dispersion with x =0.1 ~ 1, and mixing BixSb2-xTe3Dispersing the powder in deionized water, and adding a binder to obtain a P-type thermoelectric material dispersion liquid, wherein x =0.1 ~ 0.8.8, wherein Bi2SexTe3-xAnd BixSb2-xTe3The concentration range of the adhesive is 5 ~ 10 mg/mL, and the concentration range of the adhesive is 0.2 ~ 1.0.0 mg/mL;
step 2, selecting two pieces of microporous filter paper, carrying out required graphical cutting on one piece of microporous filter paper to be used as a mask, and carrying out no treatment on the other piece of microporous filter paper;
and step 3: taking the vacuum auxiliary pumping filtration membrane in the step 2 as a filtration membrane of a pumping filtration device, pouring the N-type thermoelectric material dispersion liquid in the step 1 into the pumping filtration device for pumping filtration to obtain a compound of the N-type thermoelectric material and the vacuum auxiliary pumping filtration membrane;
step 4, removing the filter paper cut at the upper layer of the vacuum auxiliary pumping filter membrane, heating and drying the filter paper at the lower layer, and flattening to obtain the graphical N-type thermoelectric film, wherein the drying temperature is 60 ~ 120 ℃ and the drying time is 30 ~ 60 min;
and 5: taking a piece of microporous filter paper, cutting the piece of microporous filter paper into a pattern, and attaching the piece of microporous filter paper serving as a mask to the N-type thermoelectric thin film obtained in the step 4; and (3) replacing the N-type thermoelectric material dispersion liquid in the step (3) with the P-type thermoelectric material dispersion liquid, and repeating the steps (3) and (4) to obtain the patterned N, P-type thermoelectric film.
2. The method according to claim 1, wherein Bi is contained in the N, P-type thermoelectric material dispersion liquid of step 12SexTe3-x、BixSb2-xTe3The mean particle diameter of the powder particles is at most 10 μm.
3. The method according to claim 1, wherein the binder in step 1 is sodium carboxymethylcellulose.
4. A patterned N, P-type thermoelectric film made according to the method of claim 1.
5. A flexible thin film thermoelectric device is characterized in that patterned N, P-type thermoelectric thin films are alternately connected in an N-P-N-P form by using a conductive adhesive to form the thermoelectric device.
6. The flexible thin film thermoelectric device of claim 5, wherein the conductive adhesive is silver paste.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114226210A (en) * | 2021-12-16 | 2022-03-25 | 华东师范大学 | Silver selenide thermoelectric composite film and preparation method and application thereof |
| WO2022068976A3 (en) * | 2021-12-03 | 2022-10-13 | 大连理工大学 | Self-supporting, flexible, optical power intensity testing device and preparation method therefor |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100911183B1 (en) * | 2008-02-12 | 2009-08-06 | 한양대학교 산학협력단 | Fabrication of flexible substrate employed a thin film of patterned carbon nano tube |
| CN102543303A (en) * | 2011-12-16 | 2012-07-04 | 苏州汉纳材料科技有限公司 | Patterned transparent electrode fabrication method |
| CN102832332A (en) * | 2012-06-15 | 2012-12-19 | 江苏物联网研究发展中心 | Flexible micro thermoelectric generator and manufacturing method thereof |
| CN103178754A (en) * | 2013-03-19 | 2013-06-26 | 浙江大学 | Flexible temperature differential power generation micro-unit structure |
| CN103426991A (en) * | 2013-08-23 | 2013-12-04 | 厦门大学 | Coining method for metal nanowire transparent ohmic electrode |
| WO2017021936A1 (en) * | 2015-08-06 | 2017-02-09 | King Abdullah University Of Science And Technology | Method for preparing microstructure arrays on the surface of thin film material |
| CN108263106A (en) * | 2016-12-30 | 2018-07-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | The graphic method of nano material |
| CN109560186A (en) * | 2018-12-14 | 2019-04-02 | 东华大学 | A kind of N-type thermal electric film and its preparation and application |
| CN109935679A (en) * | 2019-03-26 | 2019-06-25 | 东华大学 | A kind of flexibility copper telluride thermal electric film and its preparation method and application |
| CN110098328A (en) * | 2019-03-29 | 2019-08-06 | 北京大学深圳研究生院 | Flexible electronic device and its manufacturing method |
-
2019
- 2019-10-15 CN CN201910978814.5A patent/CN110649151B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100911183B1 (en) * | 2008-02-12 | 2009-08-06 | 한양대학교 산학협력단 | Fabrication of flexible substrate employed a thin film of patterned carbon nano tube |
| CN102543303A (en) * | 2011-12-16 | 2012-07-04 | 苏州汉纳材料科技有限公司 | Patterned transparent electrode fabrication method |
| CN102832332A (en) * | 2012-06-15 | 2012-12-19 | 江苏物联网研究发展中心 | Flexible micro thermoelectric generator and manufacturing method thereof |
| CN103178754A (en) * | 2013-03-19 | 2013-06-26 | 浙江大学 | Flexible temperature differential power generation micro-unit structure |
| CN103426991A (en) * | 2013-08-23 | 2013-12-04 | 厦门大学 | Coining method for metal nanowire transparent ohmic electrode |
| WO2017021936A1 (en) * | 2015-08-06 | 2017-02-09 | King Abdullah University Of Science And Technology | Method for preparing microstructure arrays on the surface of thin film material |
| CN108263106A (en) * | 2016-12-30 | 2018-07-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | The graphic method of nano material |
| CN109560186A (en) * | 2018-12-14 | 2019-04-02 | 东华大学 | A kind of N-type thermal electric film and its preparation and application |
| CN109935679A (en) * | 2019-03-26 | 2019-06-25 | 东华大学 | A kind of flexibility copper telluride thermal electric film and its preparation method and application |
| CN110098328A (en) * | 2019-03-29 | 2019-08-06 | 北京大学深圳研究生院 | Flexible electronic device and its manufacturing method |
Non-Patent Citations (2)
| Title |
|---|
| BO WU 等: ""High‐Performance Flexible Thermoelectric Devices Based on All‐Inorganic Hybrid Films for Harvesting Low‐Grade Heat"", 《ADVANCED FUNCTIONAL MATERIALS》 * |
| 高杰 等: ""柔性复合热电材料及器件的研究进展"", 《功能高分子学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022068976A3 (en) * | 2021-12-03 | 2022-10-13 | 大连理工大学 | Self-supporting, flexible, optical power intensity testing device and preparation method therefor |
| CN114226210A (en) * | 2021-12-16 | 2022-03-25 | 华东师范大学 | Silver selenide thermoelectric composite film and preparation method and application thereof |
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