CN110646977B

CN110646977B - Quantum dot display panel and display device

Info

Publication number: CN110646977B
Application number: CN201910926597.5A
Authority: CN
Inventors: 杨松; 祝明; 刘玉杰; 张世玉; 石戈; 方正; 孙艳六
Original assignee: BOE Technology Group Co Ltd; Beijing BOE Display Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Beijing BOE Display Technology Co Ltd
Priority date: 2019-09-27
Filing date: 2019-09-27
Publication date: 2023-01-10
Anticipated expiration: 2039-09-27
Also published as: CN110646977A

Abstract

The application provides a quantum dot display panel and a display device, relates to the technical field of display, and can solve the problem that a quantum dot display device is low in luminous efficiency. The quantum dot display panel has a plurality of sub-pixels. The quantum dot display panel includes: quantum dot array, first lens array, dimming layer. The quantum dot array comprises a plurality of quantum dot light-emitting layers arranged at intervals, and one quantum dot light-emitting layer is positioned in one sub-pixel. The first lens array is positioned on the light-emitting side of the quantum dot array and comprises a plurality of first lenses arranged at intervals. One lens is located in one sub-pixel, and the first lens is used for emitting parallel light. And the light modulation layer is positioned on the light emitting side of the first lens array and is provided with a plurality of light modulation areas with adjustable transmittance. One dimming region is located within one sub-pixel. The display device comprises the quantum dot display panel provided by the application.

Description

Quantum dot display panel and display device

Technical Field

The application relates to the technical field of display, in particular to a quantum dot display panel and a display device.

Background

The quantum dot display panel has the advantages of high color gamut, low energy consumption, adjustable spectrum and the like, and is more and more widely applied. However, in the quantum dot display panel in the prior art, the light rays emitted by the backlight source, which can be actually used for exciting the quantum dot material to emit light, are fewer, so that the problem of low light emitting efficiency of the quantum dot material is caused, and the efficiency of the device is reduced.

Disclosure of Invention

The embodiment of the application provides a quantum dot display panel and a display device. The luminous efficiency of the quantum dot display panel can be improved.

In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:

a first aspect of embodiments of the present application provides a quantum dot display panel. The quantum dot display panel is provided with a plurality of sub-pixels. In addition, the quantum dot display panel comprises a quantum dot array, a first lens array and a light modulation layer. The quantum dot array comprises a plurality of quantum dot light-emitting layers arranged at intervals, and one quantum dot light-emitting layer is positioned in one sub-pixel. The first lens array is located the light-emitting side of quantum dot array, and includes the first lens of a plurality of interval settings. A first lens is located in one of the sub-pixels, and the first lens is used for emitting parallel light. And the light modulation layer is positioned on the light emitting side of the first lens array and is provided with a plurality of light modulation areas with adjustable transmittance, and one light modulation area is positioned in one sub-pixel. According to the quantum dot display panel provided by the embodiment of the application, the quantum dot backlight directly excites the quantum dot light-emitting layer to emit light, and after the light emitted by the quantum dot light-emitting layer is parallelized through the first lens, the transmittance of each sub-pixel is adjusted through the dimming area of the light-emitting layer. The excitation efficiency is higher, and the transmittance of the display panel is improved.

Optionally, the dimming layer includes a second lens array and a filter layer. And the second lens array is positioned on one side of the first lens array, which is far away from the quantum dot array, and comprises a plurality of second lenses arranged at intervals. And the second lens is positioned in one sub-pixel and used for converging incident light and adjusting a convergence point of emergent light under the action of an electric field. And the filter layer is positioned on one side of the second lens array, which is far away from the quantum dot array. The filter layer has a plurality of light transmitting areas and a plurality of light shielding areas which are alternately arranged. At least one light-transmitting area and one light-shielding area are arranged in one sub-pixel, and one light-shielding area is arranged between every two adjacent sub-pixels.

Optionally, the second lens array includes: bearing layer, refractive index adjusting layer. The surface of one side of the bearing layer, which is far away from the quantum dot array, is provided with a plurality of grooves arranged at intervals, and one groove is positioned in one sub-pixel. And the refractive index adjusting layer covers the plurality of grooves on the bearing layer and is used for changing the refractive index under the action of an electric field. The groove and the material of the refractive index adjusting layer filled in the groove form a second lens. In this case, the dimming layer further includes: an electrode array and a second electrode layer. The electrode array comprises a plurality of first electrode layers which are arranged at intervals, and one first electrode layer covers the inner surface of one groove. And the second electrode layer covers one side of the refractive index adjusting layer, which is far away from the electrode array. The first electrode layer and the second electrode layer are used for providing an electric field to the second lens.

Optionally, the filter layer includes: a plurality of color filters and a plurality of black matrices. And the color filter part is positioned in the light transmission area, and the color of the color filter part is the same as the light emitting color of the quantum dot light emitting layer positioned in the same sub-pixel. Wherein, the color of at least three adjacent color filter parts is different. A black matrix is located in a light-shielding region. The color filter part can filter the false excitation light caused by the ambient light, and meanwhile, the color crosstalk between adjacent sub-pixels can be avoided by the black matrix, so that the display effect of the display panel is further improved.

Optionally, the refractive index adjustment layer includes at least one of a polymer dispersed liquid crystal layer or an electrochromic material.

Optionally, the first lens is a plano-convex lens, a plane of the plano-convex lens faces the quantum dot light emitting layer, and a convex surface of the plano-convex lens faces the light adjusting layer. In the same sub-pixel, the vertical projection of the quantum dot light emitting layer on the lens array is positioned in the plane of the plano-convex lens. Therefore, the first lens is arranged on the transparent medium, and more light rays emitted by the quantum dot light emitting layer are converted into approximately parallel light rays through the plano-convex lens.

Optionally, in the same sub-pixel, the quantum dot light emitting layer is located at the focal position of the plano-convex lens. Therefore, the light emitted by the quantum dot light-emitting layer can be changed into parallel light after passing through the plano-convex lens.

Optionally, the quantum dot display panel further includes a diffusion plate covering a side of the light modulation layer away from the quantum dot array. The diffusion plate is used for uniformly mixing the passing light.

A second aspect of the embodiments of the present application provides a display device, which includes a quantum dot backlight module and the quantum dot display panel provided in the embodiments of the first aspect. The quantum dot display panel comprises a quantum dot array and a lens array, and the quantum dot backlight module is located on one side, away from the lens array, of the quantum dot array. The display device has the same technical effects as the quantum dot display panel provided by the foregoing embodiment, and details are not repeated here.

Optionally, the quantum dot backlight module is used for emitting ultraviolet light. The quantum dot display panel further comprises an ultraviolet light blocking layer which is positioned on one side of the quantum dot array, which is far away from the quantum dot backlight module. The ultraviolet light barrier layer absorbs ultraviolet light which is not absorbed by the quantum dots, and damage to human eyes is avoided.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic diagram of a display device according to an embodiment of the present disclosure;

fig. 2 is a schematic view of a sub-pixel of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 3a is a schematic diagram of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 3b is a schematic diagram of another quantum dot display panel provided in an embodiment of the present application;

fig. 4a is a schematic diagram illustrating a positional relationship between a quantum dot light-emitting layer and a first lens according to an embodiment of the present disclosure;

FIG. 4b is a schematic diagram of approximately parallel light provided by an embodiment of the present application;

FIG. 4c is a schematic diagram illustrating a light beam converging effect of a first lens according to an embodiment of the present disclosure;

FIG. 4d is a schematic diagram illustrating a position of a quantum dot light-emitting layer and a first lens according to an embodiment of the present disclosure;

fig. 5a is a schematic view of another quantum dot display panel provided in an embodiment of the present application;

FIG. 5b is a diagram of a quantum dot display panel according to the prior art;

fig. 6a is a schematic view of another quantum dot display panel provided in an embodiment of the present application;

fig. 6b is a schematic diagram of another quantum dot display panel provided in an embodiment of the present application;

FIG. 7a is a schematic diagram of the effect of the second lens without electric field on light according to an embodiment of the present application;

FIG. 7b is a schematic diagram illustrating an effect of a second lens on light under a maximum electric field according to an embodiment of the present disclosure;

FIG. 7c is a schematic diagram illustrating an effect of a second lens on an optical path under an electric field in an intermediate state according to an embodiment of the present disclosure;

fig. 8a is a schematic view of another quantum dot display panel provided in an embodiment of the present application;

fig. 8b is a schematic view of a light modulation layer provided in an embodiment of the present application;

FIG. 8c is a schematic view of another light modulation layer provided in the embodiments of the present application;

fig. 8d is a schematic diagram of an array control layer according to an embodiment of the present disclosure;

FIG. 9a is a schematic view of an electric field distribution of a refractive index adjusting layer of the light adjusting layer provided in the embodiment of the present application;

fig. 9b is a schematic diagram of a first state of a refractive index adjustment layer of the light modulation layer provided in the embodiment of the present application;

fig. 9c is a schematic diagram of a second state of a refractive index adjustment layer of the light modulation layer provided in the embodiment of the present application;

FIG. 10a is a schematic diagram of the effect of a light modulation layer provided in the embodiment of the present application on light in the absence of an electric field;

FIG. 10b is a schematic diagram of the effect of the light modulation layer on the maximum electric field according to the embodiment of the present application;

FIG. 10c is a schematic diagram illustrating an effect of the light modulation layer on light under an electric field of an intermediate magnitude according to an embodiment of the present application;

FIG. 10d is a schematic diagram of an approximate optical path of a dimming layer provided in an embodiment of the present application in the absence of an electric field;

FIG. 10e is a schematic diagram of an approximate optical path of the dimming layer provided in the embodiment of the present application at the maximum electric field;

fig. 11 is a schematic view illustrating a filter layer of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 12 is a schematic view illustrating a diffuser plate of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 13a is a schematic view illustrating an arrangement of an ultraviolet blocking layer of a quantum dot display panel according to an embodiment of the present disclosure;

FIG. 13b is a schematic diagram of the transmittance of BK7 glass for different wavelengths of light provided by the examples of the present application;

fig. 14a is a schematic flowchart of a method for manufacturing a first substrate of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 14b is a schematic flowchart of a method for manufacturing a second substrate of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 14c is a schematic flowchart of a method for manufacturing a third substrate of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 14d is a schematic diagram of a box aligning process of a quantum dot display panel according to an embodiment of the present disclosure;

fig. 15 is a schematic view of another quantum dot display panel according to an embodiment of the present application.

Reference numerals:

10-quantum dot backlight module; 20-a quantum dot display panel; 201-sub-pixel; 200-pixels; 201-R-red subpixel; 201-G-green subpixel; 201-B-blue subpixel; 210-a quantum dot array; 211-a quantum dot light emitting layer; 220-a first lens array; 221-a first lens; 230-a transparent dielectric layer; 240-a dimming layer; 241-dimming area; 30-a liquid crystal layer; 301-a polarizer; 311-a color filter layer; 2410-a second lens array; 2411-a second lens; 2420-a filter layer; 2421-a light-transmitting area; 2422-shading area; 2412-a bearing layer; 2413-refractive index adjusting layer; 2414-groove; 2430-an electrode array; 2431-a first electrode layer; 2440-a second electrode layer; 2450-array control layer; 2451-pixel circuits; 250-a diffusion plate; 260-ultraviolet light blocking layer; 400-a first transparent substrate; 401-a first transparent dielectric layer; 402-a second transparent dielectric layer; 403-a third transparent medium layer; 40-a first substrate; 500-a second transparent substrate; 501-thin film transistor array; 502-a fourth transparent dielectric layer; 503-impression glue; 504-imprint template; 505-a via; 50-a second substrate; 600-a third transparent substrate; 601-black matrix; 602-a light shielding portion; 603-a color filter portion; 60-a third substrate; 2460-a first polarizer; 2480-a second polarizer.

Detailed Description

The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.

In this application, unless expressly stated or limited otherwise, the term "coupled" is to be construed broadly, e.g., "coupled" may be a fixed connection or a releasable connection or may be integral; may be directly connected or indirectly connected through an intermediate.

Some embodiments of the present application provide a display device including, for example, a mobile phone, a tablet computer, a Personal Digital Assistant (PDA), an in-vehicle computer, and the like. The embodiment of the present application does not specifically limit the specific form of the display device.

The display device may be provided with a light emitting layer made of a quantum dot material. The carriers in the quantum dot material of the light-emitting layer can receive the energy of exciting light under the irradiation of the exciting light to reach an excited state, and when the carriers return to a ground state, the energy is released and is emitted in a light form to emit light. In this case, the display device is a quantum dot display device. A specific structure of the quantum dot display device (hereinafter, simply referred to as a display device) will be described below.

Some embodiments of the present application provide a display device, for example, as shown in fig. 1, the display device includes a quantum dot display panel 20, and a quantum dot backlight module 10 located on a non-display surface (a surface opposite to a display surface of the quantum dot display panel) side of the quantum dot display panel 20. The quantum dot backlight module 10 is used for emitting backlight, i.e., an excitation light source. The excitation light source can excite the quantum dot material in the quantum dot display panel 20 to emit light.

The quantum dot display panel 20 includes a plurality of sub-pixels 201 as shown in fig. 2, each sub-pixel 201 can emit one of three primary colors, for example, red 201-R, green 201-G, and blue 201-B, and three adjacent sub-pixels 201 having different emission colors constitute one pixel 200, as shown in fig. 2.

In addition, as shown in fig. 3a, the quantum dot display panel 20 includes a quantum dot array 210, the quantum dot array 210 includes a plurality of quantum dot light emitting layers 211 arranged at intervals, and one quantum dot light emitting layer 211 is located in one sub-pixel 201. The quantum dot light emitting layer 211 can emit light of different colors after receiving an excitation light source emitted by the quantum dot backlight module 10.

For example, when the quantum dot light emitting layer 211 is excited by the excitation light to emit red light, the sub-pixel 201 in which the quantum dot light emitting layer 211 is located is a red sub-pixel 201-R in fig. 2. When the quantum dot light emitting layer 211 is excited by the excitation light to emit green light, the sub-pixel 201 in which the quantum light emitting layer 211 is located is a green sub-pixel 201-G in fig. 2. When the quantum dot light emitting layer 211 is excited by the excitation light to emit blue light, the sub-pixel 201 where the quantum dot light emitting layer 211 is located is a blue sub-pixel 201-B in fig. 2.

When the quantum dot material is excited by light, the color of the emitted light can be adjusted according to the components of the quantum dot material and the size and shape of the quantum dot.

In the drawings of the present application, only three sub-pixels 201 are taken as an example for illustration, and actually, the number of sub-pixels 201 may be multiple, and the number of sub-pixels 201 is not limited in the present application. In some embodiments of the present application, the material of the quantum dots may be: at least one of InP, perovskite and CuInS, and the quantum dot material is not limited in the application.

In addition, the excitation light provided by the backlight source can be blue light or ultraviolet light, wherein the ultraviolet light has higher energy and higher excitation efficiency on the quantum dots.

In order to facilitate the adjustment of the light emitted from the quantum dot light emitting layer 211, as shown in fig. 3a, a first lens array 220 is further disposed on the light emitting side of the quantum dot array 210. The first lens array 220 includes a plurality of first lenses 221 arranged at intervals, one first lens 221 is located in one sub-pixel 201, and the first lens 221 is used for emitting parallel light. The parallel light can be well adjusted relative to the divergent light emitted by the quantum dot light emitting layer 211.

A transparent medium layer 230 is further disposed between the quantum dot light emitting layer 210 and the first lens array 220 to support the first lens array 220. The material of the transparent medium can be SiOx, siNx, or transparent colloid, etc., which is not limited in this application as long as the transparent medium can play a supporting role.

In some embodiments of the present application, as shown in fig. 3a, the first lens 221 is a plano-convex lens. Alternatively, in other embodiments of the present application, as shown in fig. 3b, the structure of the first lens 221 may be a biconvex lens. Wherein the plano-convex lens has a flat surface for being conveniently disposed on the transparent medium layer 230. For convenience of explanation, the present application is explained with reference to a plano-convex lens.

In some embodiments of the present application, as shown in fig. 3a, the first lens 221 is a plano-convex lens. In this case, as shown in fig. 3a, the plane of the plano-convex lens 221 faces the quantum dot light emitting layer 211, and the convex surface of the plano-convex lens 221 is far from the quantum dot light emitting layer 211. Within the same subpixel 201, the perpendicular projection of the quantum dot light emitting layer 211 on the first lens array 220 is in the plane of the plano-convex lens 221. That is, as shown in fig. 3a, in the same sub-pixel 201, one quantum dot light emitting layer 211 is disposed opposite to one plano-convex lens 221, so that more light rays emitted from the quantum dot light emitting layer 211 pass through the plano-convex lens 221 to become approximately parallel light.

As shown in fig. 4a, when the geometric size of the quantum dot light emitting layer 211 is smaller than that of the first lens 221, i.e., on a plane parallel to the planes of OX and OZ, the area of the quantum dot light emitting layer 211 is smaller than that of the first lens 221, and the height of the quantum dot light emitting layer 211 is smaller than that of the first lens 221 in the Y direction. The light emitted from each of the quantum dot light emitting layers 211 can be totally incident into the first lens 221, and then be refracted by the first lens 221 to become parallel light or approximately parallel light.

It should be noted that, the size of the quantum dot light-emitting layer 211 and the plano-convex lens 221 is not limited in the present application, as long as the plano-convex lens 221 completely covers the light-emitting surface of the quantum dot light-emitting layer 211, so that the light emitted by the quantum dot light-emitting layer 211 is converted into parallel light after passing through the plano-convex lens 221.

Illustratively, in some embodiments of the present application, the flat surface of the plano-convex lens 221 has a radius (X direction in fig. 4 a) of 6 μm, a height (Y direction in fig. 4 a) of 5 μm, and a geometry of the quantum dot light emitting layer (X direction in fig. 4 a) of 1 μm.

The approximate light path is as shown in fig. 4b, and after the light emitted by the quantum dot light emitting layer 211 passes through the plano-convex lens 221, the light becomes approximately parallel light. The schematic diagram of the light beam convergence effect is shown in fig. 4c, after the light beam emitted by the quantum dot light-emitting layer 211 passes through the plano-convex lens 221, the intensity of the light beam with the light beam included angle of 0 ° is increased by 6.22 times compared with the intensity of the light beam with the included angle of 0 ° emitted by the quantum dot light-emitting layer 211, which indicates that the plano-convex lens 221 changes the light beam emitted by the quantum dot light-emitting layer 211 into approximately parallel light.

The light parallel to the main shaft of the convex lens can be converged at one point after passing through the convex lens, namely the focus of the convex lens. On the basis, in order to further ensure that the light emitted by the quantum dot light emitting layer 211 can become parallel light after passing through the plano-convex lens, in some embodiments of the present application, as shown in fig. 4d, in the same subpixel 201, the quantum dot light emitting layer 211 is located at a focal point F of the plano-convex lens.

The fact that the quantum dot light-emitting layer 211 is located at the focal point of the plano-convex lens means that the center of the quantum dot light-emitting layer 211 is approximately or completely coincident with the focal point of the plano-convex lens. The center of the quantum dot light emitting layer 211 is the center of its structural profile. For example, when the quantum dot light emitting layer 211 is spherical, the center of the sphere is located at the focal point of the plano-convex lens. For another example, when the quantum dot light emitting layer 211 is a cube, the center of the cube is located at the focal point of the plano-convex lens. For convenience of description, the quantum dot light emitting layer is described as a cube.

In addition, in order to adjust the parallel light emitted from the first lens 221 so that the quantum dot display panel 20 can display different gray scales, as shown in fig. 5a, the quantum dot display panel 20 further includes a light adjusting layer 240, the light adjusting layer 240 is located on the light emitting side of the first lens array 220 and has a plurality of light adjusting regions 241 with adjustable transmittance, and one light adjusting region 241 is located in one sub-pixel 201. The light adjusting region 241 adjusts the light direction of the parallel light emitted from the first lens 221, and changes the transmittance of each sub-pixel 201, so that different gray scales can be displayed, thereby realizing the display of different pictures.

In some related art quantum dot display devices as shown in fig. 5b, light emitted from the quantum dot backlight module 10 is modulated by the polarizer 301 and the liquid crystal layer 30, and then the quantum dot light emitting layer 211 is excited to emit light, and the light is emitted to the display surface of the display panel through the color filter layer 311. In this case, the light rays that can be actually used for exciting the quantum dot material to emit light are fewer in the light rays emitted by the quantum dot backlight module 10, and the light emitting efficiency of the quantum dot display device is lower.

Compared with the scheme shown in fig. 5b, as shown in fig. 5a, in the quantum dot display panel 20 provided in the embodiment of the present application, light emitted by the quantum dot backlight module 10 directly excites the quantum dot light emitting layer 211 to emit light, and after the light emitted by the quantum dot light emitting layer 211 is collimated by the first lens 221, the transmittance of each sub-pixel 201 is adjusted by the dimming region 241 of the dimming layer 240. The excitation efficiency is higher, and the transmittance of the display panel is improved.

The specific structure of the light modulation layer 240 will be described in detail below. Example 1

In some embodiments of the present application, as shown in fig. 6a, the light modulation layer 240 may include a second lens array 2410, the second lens array 2410 is located on a side of the first lens array 220 away from the quantum dot array 210, and includes a plurality of second lenses 2411 arranged at intervals, and one second lens 2411 is located in one sub-pixel 201. The second lens 2411 is used for converging incident light and adjusting the convergence point of emergent light under the action of an electric field.

Thus, different electric field effects can be applied to the second lens 2411 in each sub-pixel 201, so that the light rays emitted from the second lens 2411 are refracted to different degrees and are converged at different points, thereby realizing display of different gray scales and different colors.

As shown in fig. 7a, when the second lens 2411 has no electric field, the focal length of the lens is infinite, and light rays pass through without refraction and are not converged.

Alternatively, when the second lens 2411 is subjected to the maximum electric field, as shown in FIG. 7b, the lens has the minimum focal length f _min After passing through the second lens 2411, the parallel light is focused on the focal point of the second lens 2411. Still alternatively, when the electric field is in the intermediate state, as shown in fig. 7c, the focal length of the second lens 2411 is between the minimum value f _min And infinity.

On the basis, in order to further improve the light adjusting effect of the light adjusting layer 240, as shown in fig. 6b, the light adjusting layer 240 further includes a filter layer 2420, the filter layer 2420 is located on a side of the second lens array 2410 away from the quantum dot array 210, and the filter layer 2420 has a plurality of light transmitting areas 2421 and a plurality of light shielding areas 2422 which are alternately arranged. At least one light-transmitting area 2421 and at least one shading area 2422 are arranged in one sub-pixel 201, and one shading area 2422 is arranged between two adjacent sub-pixels 201.

Fig. 6b illustrates an example of disposing two light-transmitting regions 2421 and one light-shielding region 2422 in one sub-pixel 201. In other embodiments, a plurality of light-transmitting regions 2421 and a plurality of light-shielding regions 2422 may be further disposed on one sub-pixel 201. The setting number and the arrangement mode of the light-transmitting areas are not limited, and the display of different gray scales can be realized.

Therefore, different electric field effects can be applied to the second lens array 2410 to change the focus point of light rays, so that the proportion of the light rays emitted from the light-transmitting area 2421 and the light-shielding area 2422 is changed, and display of different gray scales is realized.

A specific structure of the second lens array 2410 will be described in detail below. In some embodiments of the present application, as shown in fig. 8a, the second lens array 2410 includes a carrier layer 2412 and a refractive index adjusting layer 2413. The surface of the carrier layer 2412 on the side away from the quantum dot array 210 has a plurality of grooves 2414 arranged at intervals, and one groove 2414 is located in one sub-pixel 201. The refractive index adjusting layer 2413 covers a plurality of grooves 2414 on the carrier layer 2412 for changing the refractive index under the action of an electric field. The groove 2414 and the material of the refractive index adjustment layer 2413 filled in the groove 2414 constitute the second lens 2411.

In this case, as shown in fig. 8b, the dimming layer 240 includes an electrode array 2430 and a second electrode layer 2440. The electrode array 2430 includes a plurality of first electrode layers 2431 arranged at intervals, and one first electrode layer 2431 covers an inner surface of one groove 2414. The second electrode layer 2440 covers a side of the refractive index adjustment layer 2413 away from the electrode array 2430. The first electrode layer 2431 and the second electrode layer 2440 serve to supply an electric field to the second lens 2411.

It should be noted that the supporting layer 2412 may be SiOx, siNx, or transparent colloid, which is not limited in this application as long as it can play a supporting role. The refractive index adjusting layer 2413 may change its refractive index under the control of an electric field, and the material of the refractive index adjusting layer 2413 is not limited in this application as long as the refractive index can be changed under the action of a voltage. Illustratively, it may be at least one of a polymer dispersed liquid crystal layer or an electrochromic material.

In addition, in order to control the electric field of the second lens 2411 in each sub-pixel 201, as shown in fig. 8c, the light modulation layer 240 further includes an array control layer 2450 on the side of the second lens array 2410 away from the second electrode layer 2440. The array control layer 2450 is provided with pixel circuits 2451 arranged in an array as shown in fig. 8d, and includes a Thin Film Transistor (TFT), a Data Line (DL) coupled to a first electrode (e.g., a source) of the TFT, and a pixel capacitor C coupled to a second electrode (e.g., a drain) of the TFT. The pixel capacitor C is formed of a first electrode layer 2431 and a second electrode layer 2440 which are provided in the light modulation layer 240.

Based on this, a row of TFTs is gated by supplying a gate drive signal to each gate line (gate line) on the array control layer 2450 row by row. Next, the pixel capacitor C coupled to the gated TFT is charged through the DL, so that under the action of different electric fields, the refractive index of the refractive index adjusting layer 2413 in the sub-pixel (sub-pixel) in which each pixel circuit 2451 is located is changed to different degrees, so that the refractive index is different from the deflection degree of light. Therefore, the light transmittance of each sub-pixel is different, and the purpose of displaying pictures with different gray scales is achieved.

The working principle of the light-adjusting layer 240 is explained in detail below:

as shown in fig. 9a, the electric field distribution between the first electrode layer 2431 and the second electrode layer 2440 is schematically shown. When a low voltage is applied between the first electrode layer 2431 and the second electrode layer 2440, as shown in fig. 9b, the variable refractive index material in the refractive index adjustment layer 2413 assumes a first state.

When a high voltage is applied between the first electrode layer 2431 and the second electrode layer 2440, as shown in fig. 9c, the variable refractive index material in the refractive index adjustment layer 2413 assumes a second state. The refractive index adjusting layer 2413 shows different states of the variable refractive index material under the action of the electric field, thereby showing different refractive indexes and refracting light to different degrees.

The first state and the second state are only for explaining that the variable refractive index material in the refractive index adjusting layer 2413 exhibits different states under different voltages, and do not represent a specific structure inside the material.

In one embodiment, when no voltage is applied between the first electrode layer 2431 and the second electrode layer 2440, the refractive index adjusting layer 2413 is in a low refractive index state, the refractive index is the same as that of the surrounding medium, the refractive index adjusting layer 2413 is equivalent to a parallel plate, the focal length is infinite, as shown in fig. 10a, parallel light can pass through, light mainly exits through the light-transmitting area 2421 in the filter layer, and the sub-pixel is in a bright state.

In another embodiment, when the maximum voltage Vmax is applied between the first electrode layer 2431 and the second electrode layer 2440, the refractive index adjusting layer 2413 is in a high refractive index state, and the refractive index adjusting layer 2413 is equivalent to a focal length f _min As shown in fig. 10b, the parallel light passes through the refractive index adjusting layer 2413 and then is focused on the light shielding region 2422, the light cannot exit, and the sub-pixel is in a dark state.

In another embodiment, when a voltage between 0 and Vmax is applied between the first electrode layer 2431 and the second electrode layer 2440, the refractive index of the refractive index adjusting layer 2413 is in an intermediate state, the refractive index adjusting layer 2413 is equivalent to a convex lens with a focal length f, and the focal length f is between f and f _min And infinity, as shown in fig. 10c, after the parallel light passes through, a part of the parallel light passes through the light-transmitting part 2421 to be emitted out of the quantum dot display panel, a part of the parallel light is shielded by the light-shielding part 2422 and cannot be emitted out, and the sub-pixel is at the middle gray level.

In some embodiments of the present application, as shown in fig. 10b, the light-shielding region 2422 in the sub-pixel 201 is located at the minimum focal length f of the second lens _min To (3). Illustratively, the radius of the second lensAnd 5 μm, and a depth in the panel thickness direction is 4 μm, a minimum focal length of the second lens is 7.5 μm, and a distance between an upper plane of the second lens and a lower surface of the light-shielding section 2422 in the panel thickness direction is 7.1 μm. In this case, the size of the light-shielding region 2422 in the direction perpendicular to the panel thickness direction is taken as an example to be 4 μm. When no voltage is applied, the optical path is as shown in FIG. 10d, and the transmittance at this time is 22.88%. When the maximum voltage was applied, the optical path was as shown in fig. 10e, and the transmittance at this time was 14.46%.

In addition, in order to prevent the ambient light from entering the quantum dot display panel 20 and illuminating the quantum dot light emitting layer 211, the quantum dots are erroneously excited to emit light, and unnecessary excitation light is generated, which affects the display effect of the quantum dot display panel. In some embodiments of the present application, as shown in fig. 11, the filter layer 240 further includes a plurality of color filter portions, one color filter portion is located in one light-transmitting area 2421, and the color of the color filter portion is the same as the light-emitting color of the quantum dot light-emitting layer 211 located in the same sub-pixel. Wherein, the color of at least three adjacent color filter parts is different. In addition, filter layer 240 further includes a plurality of black matrixes, and one black matrix is located in one light-shielding region 2422, so that a better light-shielding effect can be achieved, and light crosstalk between adjacent sub-pixels can be avoided.

In some embodiments of the present application, as shown in fig. 12, the quantum dot display panel 20 further includes a diffuser plate 250 covering a side of the light modulation layer 240 away from the quantum dot array 210. The diffusion plate 250 serves to uniformly mix the passing light.

In some embodiments of the present application, when the backlight module 10 is an ultraviolet backlight, in order to avoid the ultraviolet light that is not absorbed by the quantum dots from damaging human eyes, as shown in fig. 13a, the quantum dot display panel 20 further includes an ultraviolet light blocking layer 260, and the ultraviolet light blocking layer 260 is located on a side of the quantum dot array 210 away from the quantum dot backlight module 10.

The ultraviolet light blocking layer 260 may be TiO ₂ The ultraviolet light absorbing material, or the silicate glass which can absorb ultraviolet light, such as BK7, can not only absorb ultraviolet light, but also transmit visible light emitted from the quantum dot light emitting layer 211. FIG. 13b shows BK7 glass for different wavelengthsSince the wavelength range of the ultraviolet light is 10nm to 400nm, it can be seen that the BK7 glass can effectively block the ultraviolet light.

The following explains a method for manufacturing a quantum dot display panel provided by the present example, and the method for manufacturing a quantum dot display panel includes the following steps:

s101 is used to fabricate the first substrate 40.

The S101 specifically includes: as shown in fig. 14a, first, a first transparent substrate 400 is provided, and a first transparent medium layer 401 is formed on the first transparent substrate 400.

Next, quantum dot light emitting layers 211 are formed on the first transparent dielectric layer 401 at intervals, and one quantum dot light emitting layer 211 is located in one sub-pixel.

Next, a second transparent medium layer 402 is formed on the quantum dot light emitting layer 211.

Next, the first lens 221 is disposed on the second transparent medium layer 402, and one first lens 221 is located in one sub-pixel.

Next, a third transparent medium layer 403 is formed on the first lens 221, resulting in the first substrate 40.

S102, the second substrate 50 is manufactured.

The S102 specifically includes: as shown in fig. 14b, first, a second transparent substrate 500, which is a BK7 glass substrate, is provided.

Next, on the second transparent substrate 500, a gate electrode, a gate insulating layer, a semiconductor active layer, and source/drain electrodes are sequentially formed through a thin film deposition and patterning process to form a thin film transistor array 501.

Next, a fourth transparent dielectric layer 502 is deposited over the thin film transistor array 501.

Next, an imprint paste 503 is coated on the fourth transparent medium 502.

Next, grooves 2414 are formed on the imprint paste 503 using the imprint template 504.

Next, a via 505 is formed in the groove 2414 by a patterning process, and the via 505 penetrates through the fourth transparent dielectric layer 502 to expose the second electrode of the thin film transistor 501.

Next, a first electrode layer 2431 is deposited within the recess 2414.

Next, the refractive index adjustment layer 2413 is filled on the first electrode layer 2431 in the groove 2414, and the second substrate 50 is obtained.

S103, a third substrate 60 is manufactured.

The S103 specifically includes: as shown in fig. 14c, first, a third transparent substrate 600 is provided.

Next, through a patterning process, a black matrix 601 and a light shielding portion 602 are formed on the third transparent substrate 600, the black matrix 601 defines a plurality of sub-pixels with the third substrate, and the light shielding portion 602 is disposed within the sub-pixels.

Next, the color filter portion 603 is formed in the sub-pixel.

Next, a second transparent electrode layer 2440 is formed over the substrate including the black matrix 601 and the color filter 603, and a third substrate 60 is obtained.

S104, as shown in fig. 14d, the first substrate 40, the second substrate 50, and the third substrate 60 are sequentially disposed from bottom to top, and are sealed and fixed to obtain the quantum dot display panel.

The first transparent medium 401, the second transparent medium 402, the third transparent medium 403, and the fourth transparent medium 505 may be SiNx, siO2, or other materials, which is not limited in this application. The first electrode layer 2431 and the second electrode layer 2440 may be made of a transparent conductive material such as ITO or IGZO. The method of forming the quantum dot light emitting layers 211 disposed at intervals on the transparent medium may be inkjet printing, evaporation, or the like.

Example two

In some embodiments of the present application, a quantum dot display panel is provided, as shown in fig. 15, and unlike the first example, the dimming layer 240 includes a first polarizer 2460, a plurality of first electrode layers 2431 arranged at intervals, a liquid crystal layer 30, a second electrode layer 2440, and a second polarizer 2480. Each first electrode layer 2431 is located at a sub-pixel, and the second electrode layer 2440 applies an electric field to the liquid crystal layer 30 to change the deflection state of the liquid crystal layer 30, thereby realizing adjustment of the refraction direction of light, and enabling the quantum dot display panel to display different gray scales. A first polarizer 2460 is disposed on a side of the array control layer 2450 remote from the liquid crystal layer 30, and a second polarizer is disposed on a side of the second electrode layer 2440 remote from the liquid crystal layer 30.

The quantum dot display panel that this application embodiment provided, quantum dot backlight unit 10 earlier through quantum dot luminescent layer 211 in quantum dot array 210, arouses efficiently, and the light that sends still has higher light intensity behind liquid crystal layer 30. And the liquid crystal layer is simple to manufacture and easy to obtain, and has the advantages of low cost and the like.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A quantum dot display panel is characterized by comprising a plurality of sub-pixels; the display panel includes:

the quantum dot array comprises a plurality of quantum dot light-emitting layers arranged at intervals; one of the quantum dot light emitting layers is located within one of the sub-pixels;

the first lens array is positioned on the light emitting side of the quantum dot array and comprises a plurality of first lenses arranged at intervals; one said first lens is located in one said sub-pixel, said first lens is used for emitting parallel light;

the light modulation layer is positioned on the light emitting side of the first lens array and is provided with a plurality of light modulation areas with adjustable transmittance; one of the dimming regions is located in one of the sub-pixels;

the transparent medium layer is positioned between the quantum dot array and the first lens array;

the diffusion plate covers one side, far away from the quantum dot array, of the light modulation layer;

wherein the dimming layer comprises: the second lens array is positioned on one side of the first lens array, which is far away from the quantum dot array, and comprises a plurality of second lenses arranged at intervals; one said second lens is located within one said sub-pixel; the second lens is used for converging incident light and adjusting a convergence point of emergent light under the action of an electric field; one first lens and one second lens are arranged opposite to each other in the same sub-pixel;

the second lens array includes:

the surface of one side of the bearing layer, which is far away from the quantum dot array, is provided with a plurality of grooves arranged at intervals; one of the recesses is located within one of the sub-pixels;

the refractive index adjusting layer covers the grooves on the bearing layer and is used for changing the refractive index under the action of an electric field; the second lens is formed by the groove and the material of the refractive index adjusting layer filled in the groove; the refractive index adjusting layer is made of electrochromic materials;

the radius of the second lens is 5 μm, and the depth of the second lens along the thickness direction of the display panel is 4 μm;

the dimming layer further comprises:

the electrode array comprises a plurality of first electrode layers arranged at intervals; one of said first electrode layers covering an inner surface of one of said grooves;

the second electrode layer covers one side, far away from the electrode array, of the refractive index adjusting layer; the first electrode layer and the second electrode layer are used for providing an electric field for the second lens;

the array control layer is positioned on one side, away from the second electrode layer, of the second lens array; and the array control layer is provided with pixel circuits arranged in an array manner.

2. The quantum dot display panel of claim 1, wherein the dimming layer further comprises:

the filter layer is positioned on one side, far away from the quantum dot array, of the second lens array; the filter layer is provided with a plurality of light transmitting areas and a plurality of light shading areas which are alternately arranged;

at least one light-transmitting area and at least one light-shading area are arranged in one sub-pixel; and one shading area is arranged between two adjacent sub-pixels.

3. The quantum dot display panel of claim 2, wherein the filter layer comprises:

the color filter parts are positioned in the light-transmitting areas, and the color of each color filter part is the same as the light-emitting color of the quantum dot light-emitting layer positioned in the same sub-pixel;

a plurality of black matrices, one of the black matrices being located in one of the light-shielding regions;

wherein, at least three adjacent color filter parts have different colors.

4. The quantum dot display panel according to claim 1, wherein the first lens is a plano-convex lens; the plane of the plano-convex lens faces the quantum dot light-emitting layer, and the convex surface of the plano-convex lens faces the light-adjusting layer;

and in the same sub-pixel, the vertical projection of the quantum dot light-emitting layer on the first lens array is positioned in the plane of the plano-convex lens.

5. The quantum dot display panel according to claim 4,

and in the same sub-pixel, the quantum dot light-emitting layer is positioned at the focal position of the plano-convex lens.

6. A display device comprising a quantum dot backlight module and the quantum dot display panel of any one of claims 1-5; the quantum dot display panel comprises a quantum dot array and a lens array;

the quantum dot backlight module is positioned on one side of the quantum dot array, which is far away from the lens array.

7. The display device according to claim 6, wherein the quantum dot backlight module is configured to emit ultraviolet light;

the quantum dot display panel further comprises an ultraviolet light blocking layer positioned on one side of the quantum dot array, which is far away from the quantum dot backlight module.