CN110643967A - Semiconductor film and preparation method thereof - Google Patents

Semiconductor film and preparation method thereof Download PDF

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Publication number
CN110643967A
CN110643967A CN201911017277.4A CN201911017277A CN110643967A CN 110643967 A CN110643967 A CN 110643967A CN 201911017277 A CN201911017277 A CN 201911017277A CN 110643967 A CN110643967 A CN 110643967A
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chromium oxide
semiconductor film
titanium diboride
niobium pentoxide
vacuum device
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闫一方
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Su Normal University Semiconductor Materials and Equipment Research Institute Pizhou Co Ltd
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Su Normal University Semiconductor Materials and Equipment Research Institute Pizhou Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The invention provides a semiconductor film and a preparation method thereof, relating to the technical field of semiconductor materials. The semiconductor film and the preparation method thereof, the film comprises niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide to the titanium diboride to the chromium oxide is 0.3:0.3:0.4, the thickness of the film is 30-40nm, and the method comprises the following steps: s1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, and then sequentially granulating, tabletting and sintering to obtain the ceramic target. By introducing a doping gas as SiH4、SiF4And SiH2Ci4The semiconductor film contains a small amount of H ions, so that a layer of network structure is formed on the surface of the semiconductor film, the characteristic of the semiconductor film can not fade after the semiconductor film is irradiated by strong light, and the normal use of the semiconductor film is ensured.

Description

Semiconductor film and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a semiconductor film and a preparation method thereof.
Background
The semiconductor is a material with electric conductivity between the conductor and the insulator at normal temperature, and has wide application in radio, television and temperature measurement, for example, the diode is a device made of the semiconductor. Semiconductor refers to a material with controllable conductivity ranging from insulator to conductor, and its importance is very great from the viewpoint of technological or economic development, and most of the electronic products such as computers, mobile phones or digital audio recorders today have a very close relationship with semiconductors, and the common semiconductor materials include silicon, germanium, gallium arsenide, etc., and silicon is the most significant one of the semiconductor materials in commercial applications.
With the rapid development of science and technology, semiconductor devices are more and more common in our lives, and related researches on semiconductor films are more and more.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a semiconductor film and a preparation method thereof, which solve the problems that the characteristics of the semiconductor film in the prior art are obviously degenerated after the semiconductor film is irradiated by strong light, and the use of the semiconductor film is seriously influenced because the problem cannot be effectively solved by the conventional preparation method.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: the semiconductor film consists of niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide to the titanium diboride to the chromium oxide is 0.3:0.3:0.4, and the thickness of the film is 30-40 nm.
Preferably, a method for manufacturing a semiconductor thin film includes the steps of:
s1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, and then sequentially granulating, tabletting and sintering to obtain a ceramic target material;
s2, selecting a substrate and preprocessing the substrate, then sending the target and the substrate into a vacuum device, simultaneously introducing rare gas into the vacuum device, stopping introducing the rare gas when the introduced rare gas reaches a preset value, and forming a semiconductor film on the substrate by using a glow discharge method;
and S3, introducing doping gas into the vacuum device, adjusting the temperature in the vacuum device, drying the formed semiconductor film, and performing chemical annealing after drying to obtain the final semiconductor film.
Preferably, the rare gas is one or more of helium, neon, argon, krypton and xenon, and the amount of the rare gas introduced is 20-30% of the volume of the gas in the vacuum apparatus.
Preferably, a high-speed stirring device is utilized when the niobium pentoxide, the titanium diboride and the chromium oxide are mixed, the rotating speed of the high-speed stirring device is 5000-6000r/min, the calcining temperature of the mixture of the niobium pentoxide, the titanium diboride and the chromium oxide is 600-700 ℃, and the calcining time is 1-2 hours.
Preferably, the pressure in the vacuum device is 5x10-5-5x10-7Mpa, the drying temperature in the vacuum device is 1000-1200 ℃, and the chemical annealing temperature is 350-500 ℃.
Preferably, the doping gas is SiH4、SiF4、SiH2Ci4In which is SiH4、SiF4、SiH2Ci4And introducing the materials in sequence.
(III) advantageous effects
The invention provides a semiconductor film and a preparation method thereof. The method has the following beneficial effects:
1. the semiconductor film is prepared by introducing a doping gas SiH4、SiF4And SiH2Ci4The semiconductor film contains a small amount of H ions, so that a layer of network structure is formed on the surface of the semiconductor film, the characteristic of the semiconductor film can not fade after the semiconductor film is irradiated by strong light, and the normal use of the semiconductor film is ensured.
2. According to the semiconductor film and the preparation method thereof, niobium pentoxide, titanium diboride and chromium oxide are used as the target material, so that the content of doped ions in the semiconductor film is improved, and the performance of the semiconductor film is further improved.
Detailed Description
The following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the embodiment of the invention provides a semiconductor film, which comprises niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide to the titanium diboride to the chromium oxide is 0.3:0.3:0.4, and the thickness of the film is 30-40 nm.
By introducing a doping gas as SiH4、SiF4And SiH2Ci4The semiconductor film contains a small amount of H ions, so that a layer of network structure is formed on the surface of the semiconductor film, the characteristic of the semiconductor film can not fade after the semiconductor film is irradiated by strong light, and the normal use of the semiconductor film is ensured.
A method for preparing a semiconductor thin film comprises the following steps:
s1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, and then sequentially granulating, tabletting and sintering to obtain a ceramic target material;
s2, selecting a substrate and preprocessing the substrate, then sending the target and the substrate into a vacuum device, simultaneously introducing rare gas into the vacuum device, stopping introducing the rare gas when the introduced rare gas reaches a preset value, and forming a semiconductor film on the substrate by using a glow discharge method;
and S3, introducing doping gas into the vacuum device, adjusting the temperature in the vacuum device, drying the formed semiconductor film, and performing chemical annealing after drying to obtain the final semiconductor film.
The rare gas is one or more of helium, neon, argon, krypton and xenon, the introduction amount of the rare gas is 20% of the volume of the gas in the vacuum device, a high-speed stirring device is utilized when niobium pentoxide, titanium diboride and chromium oxide are mixed, the rotating speed of the high-speed stirring device is 5000r/min, the calcining temperature of the mixture of the niobium pentoxide, the titanium diboride and the chromium oxide is 600 ℃, the calcining time is 2 hours, and the pressure in the vacuum device is 5x10-5Mpa, drying temperature in vacuum apparatus is 1000 deg.C, chemical annealing temperature is 500 deg.C, and doping gas is SiH4、SiF4、SiH2Ci4In which is SiH4、SiF4、SiH2Ci4And introducing the materials in sequence.
By using niobium pentoxide, titanium diboride and chromium oxide as the target material, the content of doped ions in the semiconductor film is improved, so that the performance of the semiconductor film is further improved.
Example two:
the embodiment of the invention provides a semiconductor film, which comprises niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide to the titanium diboride to the chromium oxide is 0.3:0.3:0.4, and the thickness of the film is 30-40 nm.
A method for preparing a semiconductor thin film comprises the following steps:
s1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, and then sequentially granulating, tabletting and sintering to obtain a ceramic target material;
s2, selecting a substrate and preprocessing the substrate, then sending the target and the substrate into a vacuum device, simultaneously introducing rare gas into the vacuum device, stopping introducing the rare gas when the introduced rare gas reaches a preset value, and forming a semiconductor film on the substrate by using a glow discharge method;
and S3, introducing doping gas into the vacuum device, adjusting the temperature in the vacuum device, drying the formed semiconductor film, and performing chemical annealing after drying to obtain the final semiconductor film.
The rare gas is one or more of helium, neon, argon, krypton and xenon, the introduction amount of the rare gas is 25% of the volume of the gas in the vacuum device, a high-speed stirring device is utilized when niobium pentoxide, titanium diboride and chromium oxide are mixed, the rotating speed of the high-speed stirring device is 5500r/min, the calcining temperature of the mixture of the niobium pentoxide, the titanium diboride and the chromium oxide is 650 ℃, the calcining time is 1.5 hours, and the pressure in the vacuum device is 5x10-6Mpa, drying temperature in vacuum device is 1100 deg.C, chemical annealing temperature is 450 deg.C, and doping gas is SiH4、SiF4、SiH2Ci4In which is SiH4、SiF4、SiH2Ci4And introducing the materials in sequence.
Example three:
the embodiment of the invention provides a semiconductor film, which comprises niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide to the titanium diboride to the chromium oxide is 0.3:0.3:0.4, and the thickness of the film is 30-40 nm.
A method for preparing a semiconductor thin film comprises the following steps:
s1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, and then sequentially granulating, tabletting and sintering to obtain a ceramic target material;
s2, selecting a substrate and preprocessing the substrate, then sending the target and the substrate into a vacuum device, simultaneously introducing rare gas into the vacuum device, stopping introducing the rare gas when the introduced rare gas reaches a preset value, and forming a semiconductor film on the substrate by using a glow discharge method;
and S3, introducing doping gas into the vacuum device, adjusting the temperature in the vacuum device, drying the formed semiconductor film, and performing chemical annealing after drying to obtain the final semiconductor film.
The rare gas is one or more of helium, neon, argon, krypton and xenon, the introduction amount of the rare gas is 30% of the volume of the gas in the vacuum device, a high-speed stirring device is utilized when niobium pentoxide, titanium diboride and chromium oxide are mixed, the rotating speed of the high-speed stirring device is 6000r/min, the calcining temperature of the mixture of the niobium pentoxide, the titanium diboride and the chromium oxide is 700 ℃, the calcining time is 1 hour, and the pressure in the vacuum device is 5x10-7Mpa, drying temperature in vacuum device is 1200 deg.C, chemical annealing temperature is 350 deg.C, and doping gas is SiH4、SiF4、SiH2Ci4In which is SiH4、SiF4、SiH2Ci4And introducing the materials in sequence.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. A semiconductor thin film characterized in that: the film comprises niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide to the titanium diboride to the chromium oxide is 0.3:0.3:0.4, and the thickness of the film is 30-40 nm.
2. A method for preparing a semiconductor thin film is characterized by comprising the following steps: the method comprises the following steps:
s1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, and then sequentially granulating, tabletting and sintering to obtain a ceramic target material;
s2, selecting a substrate and preprocessing the substrate, then sending the target and the substrate into a vacuum device, simultaneously introducing rare gas into the vacuum device, stopping introducing the rare gas when the introduced rare gas reaches a preset value, and forming a semiconductor film on the substrate by using a glow discharge method;
and S3, introducing doping gas into the vacuum device, adjusting the temperature in the vacuum device, drying the formed semiconductor film, and performing chemical annealing after drying to obtain the final semiconductor film.
3. The method for manufacturing a semiconductor thin film according to claim 2, characterized in that: the rare gas is one or more of helium, neon, argon, krypton and xenon, and the introduction amount of the rare gas is 20-30% of the volume of the gas in the vacuum device.
4. The method for manufacturing a semiconductor thin film according to claim 2, characterized in that: and a high-speed stirring device is utilized when the niobium pentoxide, the titanium diboride and the chromium oxide are mixed, the rotating speed of the high-speed stirring device is 5000-6000r/min, the calcining temperature of the mixture of the niobium pentoxide, the titanium diboride and the chromium oxide is 600-700 ℃, and the calcining time is 1-2 hours.
5. The method for manufacturing a semiconductor thin film according to claim 2, characterized in that: the pressure in the vacuum device was 5x10-5-5x10-7Mpa, the drying temperature in the vacuum device is 1000-1200 ℃, and the chemical annealing temperature is 350-500 ℃.
6. The method for manufacturing a semiconductor thin film according to claim 2, characterized in that: the doping gas is SiH4、SiF4、SiH2Ci4In which is SiH4、SiF4、SiH2Ci4And introducing the materials in sequence.
CN201911017277.4A 2019-10-24 2019-10-24 Semiconductor film and preparation method thereof Pending CN110643967A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101576708A (en) * 2008-06-13 2009-11-11 唐德明 Method of photolithographic patterning
CN101864555A (en) * 2009-04-14 2010-10-20 上海高展金属材料有限公司 Conductive niobium oxide target and preparation method and application thereof
CN102176494A (en) * 2011-03-24 2011-09-07 南开大学 Preparation method of hydrogenated IMO (molybdenum dopted indium oxide) thin film or IWO (wolfram dopted indium oxide) transparent conductive thin film
CN103296575A (en) * 2012-02-28 2013-09-11 王广武 Nanometer gain medium laminated glass
CN104164654A (en) * 2014-07-23 2014-11-26 华灿光电股份有限公司 Method for preparing transparent conductive film
CN104895461A (en) * 2015-05-06 2015-09-09 内蒙古坤瑞玻璃工贸有限公司 Efficient energy-saving intelligent electric heating hollow glass and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101576708A (en) * 2008-06-13 2009-11-11 唐德明 Method of photolithographic patterning
CN101864555A (en) * 2009-04-14 2010-10-20 上海高展金属材料有限公司 Conductive niobium oxide target and preparation method and application thereof
CN102176494A (en) * 2011-03-24 2011-09-07 南开大学 Preparation method of hydrogenated IMO (molybdenum dopted indium oxide) thin film or IWO (wolfram dopted indium oxide) transparent conductive thin film
CN103296575A (en) * 2012-02-28 2013-09-11 王广武 Nanometer gain medium laminated glass
CN104164654A (en) * 2014-07-23 2014-11-26 华灿光电股份有限公司 Method for preparing transparent conductive film
CN104895461A (en) * 2015-05-06 2015-09-09 内蒙古坤瑞玻璃工贸有限公司 Efficient energy-saving intelligent electric heating hollow glass and preparation method thereof

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