CN110635020B - Magnesium-antimony-based thermoelectric element and preparation method and application thereof - Google Patents
Magnesium-antimony-based thermoelectric element and preparation method and application thereof Download PDFInfo
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- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
Abstract
The invention provides a magnesium-antimony-based thermoelectric element and a preparation method and application thereof. The thermoelectric element includes: the thermoelectric element comprises a magnesium-antimony-based thermoelectric material substrate layer positioned in the center of the thermoelectric element, transition layers attached to two surfaces of the substrate layer and two electrode layers respectively attached to the surfaces of the two transition layers, wherein the transition layers are made of copper and titanium and/or magnesium alloy, and the electrode layers are made of copper and/or nickel. The invention adopts ion beam sputtering and magnetron sputtering to prepare the transition layer and the electrode layer which are suitable for the magnesium antimony based thermoelectric material, so that the magnesium antimony based thermoelectric material has the opportunity to enter the market and the realization of industrialization becomes possible. Compared with the existing bismuth telluride thermoelectric devices in the market, the thermoelectric device prepared by the method has lower cost, can save rare element tellurium, and is beneficial to saving energy and protecting the environment.
Description
Technical Field
The invention relates to a magnesium antimony-based thermoelectric element, a preparation method thereof and a thermoelectric refrigerating device comprising the magnesium antimony-based thermoelectric element.
Background
Thermoelectric materials are functional materials that enable direct interconversion of thermal and electrical energy. The thermoelectric component made of the thermoelectric material has the advantages of light weight, small volume, simple structure, no noise, zero emission, long service life and the like. This is of great significance to solve the serious problems of energy crisis and environmental pollution, and has therefore received high attention from all countries in the world.
With the design concept of new materials and the development of new device preparation processes and new technologies, the performance of thermoelectric materials is gradually optimized and improved. Meanwhile, the commercialization of the thermoelectric device is realized to a certain extent, and particularly in the aspect of thermoelectric refrigeration devices at near room temperature, the bismuth telluride material is widely popularized and applied. However, bismuth telluride materials are expensive and toxic, which limits further large-scale use of such materials in thermoelectric refrigeration. Therefore, the development of new near-room temperature thermoelectric materials and devices is a strategic demand for the development of the entire thermoelectric field and is also a bottleneck problem for the development of the thermoelectric refrigeration industry.
The magnesium-antimony-based alloy is a novel thermoelectric material and becomes a research hotspot in the thermoelectric field from 2016. Through a great deal of research, researchers can greatly improve the thermoelectric figure of merit of the n-type magnesium antimony-based thermoelectric material through various means, and the thermoelectric figure of merit ZT at room temperature can be close to or reach 0.8.
However, there are very few reports on magnesium antimony based thermoelectric devices compared to materials. For the thermoelectric refrigerating devices which are widely applied to the aspects of automobile air-conditioning seats, environment-friendly refrigerators and the like at present, the traditional bismuth telluride-based thermoelectric material is still used. Compared with the magnesium-antimony-based thermoelectric material, the bismuth telluride-based thermoelectric material has high cost, and the price of the raw materials such as tellurium, bismuth and the like is far higher than that of the raw materials such as magnesium-antimony and the like. Before the discovery of high performance magnesium antimony based thermoelectric materials, the use of bismuth telluride based thermoelectric materials in thermoelectric refrigeration devices was not an alternative. However, with continuous research, the performance of the magnesium antimony based thermoelectric material is continuously improved, and the performance of the magnesium antimony based thermoelectric material can be equivalent to that of the bismuth telluride based thermoelectric material in a room temperature region, which provides a basis and possibility for the application of the magnesium antimony based thermoelectric material on refrigeration devices.
The application of the magnesium-antimony-based thermoelectric material in thermoelectric devices is realized, and the thermoelectric material can be further assembled into a thermoelectric refrigeration system only if the good thermoelectric performance is far from enough and the thermoelectric material is required to be prepared into thermoelectric components. The key to the preparation of thermoelectric elements is the development of electrode layers which can be matched with the magnesium antimony based thermoelectric materials. To date, no report has been made on scaling electrode layer materials to match the magnesium antimony based thermoelectric materials. Some traditional electrode materials (such as aluminum, silver, copper, nickel and the like) cannot be tightly combined with the magnesium-antimony-based thermoelectric material, some traditional electrode materials have overlarge contact resistance, and some traditional electrode materials can also react with a material matrix. The difficulty in preparing the electrode material influences the further application of the magnesium antimony based thermoelectric material in the aspect of devices.
Therefore, it is urgently needed to develop an electrode layer matched with a magnesium antimony-based thermoelectric material and a corresponding preparation method to realize the application of the magnesium antimony-based thermoelectric material in a thermoelectric device, so that the thermoelectric refrigeration performance in a room temperature region is ensured, the cost of the thermoelectric refrigeration material is reduced, and the development of the thermoelectric refrigeration industry is promoted.
Disclosure of Invention
The invention aims to develop an electrode layer suitable for a magnesium antimony based thermoelectric material aiming at the limitations and disadvantages of the prior art, and provides a magnesium antimony based thermoelectric component capable of replacing N-type bismuth telluride, a preparation method and application thereof, so that the application of the magnesium antimony based thermoelectric material in the aspect of devices is realized, the material cost is saved, and the economic benefit is improved.
In one aspect, the present invention provides a magnesium antimony-based thermoelectric element, including: the thermoelectric element comprises a magnesium-antimony-based thermoelectric material substrate layer positioned in the center of the thermoelectric element, transition layers attached to two surfaces of the substrate layer and two electrode layers respectively attached to the surfaces of the two transition layers, wherein the transition layers are made of copper and titanium and/or magnesium alloy, and the electrode layers are made of copper and/or nickel.
According to the present invention, there is provided a magnesium antimony-based thermoelectric element, wherein the alloy of copper with titanium and/or magnesium includes a copper-titanium alloy, a copper-magnesium alloy and a copper-titanium-magnesium alloy. Preferably, the material of the transition layer is titanium copper alloy or magnesium copper alloy. Further preferably, the composition of the titanium-copper alloy is TiCunN is more than or equal to 0 and less than or equal to 0.5, and the magnesium-copper alloy consists of MgmCu，0.5≤m≤3。
According to the magnesium-antimony-based thermoelectric element provided by the invention, the composition of the magnesium-antimony-based thermoelectric material is Mg3.3- xZxBi0.5Sb1.5-yTeyWherein x is more than or equal to 0 and less than or equal to 0.1, y is more than or equal to 0.01 and less than or equal to 0.05, and Z is one or more elements selected from Mn, Ni, Cr and Nb.
According to the magnesium antimony-based thermoelectric element provided by the invention, the thickness of the substrate layer can be adjusted according to practical application, and can be usually 0.5-2 mm. The thickness of the transition layer can be 5-50 nm, preferably 5-20 nm; the thickness of the electrode layer may be 0.5 to 10 μm, preferably 0.5 to 5 μm.
According to the magnesium-antimony-based thermoelectric element provided by the invention, the upper surface and the lower surface of the substrate layer are respectively provided with the transition layer and the electrode layer, and the thickness of the transition layer positioned on the upper surface can be the same as or different from that of the transition layer positioned on the lower surface; the thickness of the electrode layer on the upper surface and the thickness of the electrode layer on the lower surface may be the same or different.
On the other hand, the invention also provides a preparation method of the magnesium antimony based thermoelectric element, which comprises the following steps: and respectively forming the transition layer and the electrode layer on two surfaces of the magnesium-antimony-based thermoelectric material matrix layer by an ion beam sputtering and/or magnetron sputtering method to prepare the magnesium-antimony-based thermoelectric element.
According to the preparation method provided by the invention, the method of ion beam sputtering can comprise the following steps: fixing the magnesium-antimony-based thermoelectric material substrate layer in an ion beam sputtering instrument with a transition layer alloy target and an electrode layer metal target, firstly depositing transition layer alloy on one surface of the substrate layer to form a transition layer, and then depositing electrode layer metal to form an electrode layer; and then depositing a transition layer alloy on the other surface of the substrate layer to form a transition layer, and depositing an electrode layer metal to form an electrode layer to obtain the magnesium-antimony-based thermoelectric element.
According to the preparation method provided by the invention, in a most preferred preparation scheme, the ion beam sputtering method comprises the following steps: firstly, putting the magnesium-antimony-based thermoelectric material substrate layer into a beaker containing alcohol, cleaning for 5-10 minutes by using an ultrasonic cleaning instrument, then drying by using an electric blower or a drying device, and fixing the magnesium-antimony-based thermoelectric material substrate layer into an ion beam sputtering instrument with a transition layer alloy target and an electrode layer metal target after the treatment is finished, wherein the working conditions are as follows: the energy of a main source is 800-1000 eV, and the beam current is 60-100 mA; the energy of the auxiliary source is 90-120 eV, the beam current is 5-20 mA, and the vacuum degree is less than 2.4 multiplied by 10-2Pa. By ion beam sputteringForming a transition layer by injection, wherein the deposition time is 2-10 minutes, and continuously depositing electrode layer metal for 60-210 minutes to form an electrode layer; and then closing the instrument, opening the chamber to take out the sample, turning over the sample, fixing the sample again, and continuously depositing a transition layer and an electrode layer on the other surface of the magnesium-antimony-based thermoelectric material substrate layer by using the same process.
The magnetron sputtering method may include: fixing the magnesium-antimony-based thermoelectric material substrate layer in a magnetron sputtering instrument with a transition layer alloy target and an electrode layer metal target, firstly depositing transition layer alloy on one surface of the substrate layer to form a transition layer, and then depositing electrode layer metal to form an electrode layer; and then depositing a transition layer alloy on the other surface of the substrate layer to form a transition layer, and depositing an electrode layer metal to form an electrode layer to obtain the magnesium-antimony-based thermoelectric element.
According to the preparation method provided by the invention, in a most preferred preparation scheme, the magnetron sputtering method comprises the following steps: firstly, putting a magnesium-antimony-based thermoelectric material substrate layer into a beaker containing alcohol, cleaning for 5-10 minutes by using an ultrasonic cleaning instrument, then drying by using an electric blowing or drying device, and fixing the magnesium-antimony-based thermoelectric material substrate layer into a magnetron sputtering instrument with a transition layer alloy target and an electrode layer metal target after the treatment is finished, wherein the working conditions comprise: vacuumizing until the vacuum degree is less than 0.00066Pa, adjusting the power of a titanium copper alloy target to 90-110W or adjusting the power of a magnesium copper alloy target to 70-80W, forming a transition layer through magnetron sputtering, wherein the deposition time is 2-20 minutes, and then depositing electrode layer metal for 20-60 minutes at the power of 90-110W to form an electrode layer; and then closing the instrument, opening the chamber to take out the sample, turning over the sample, fixing the sample again, and continuously depositing a transition layer and an electrode layer on the other surface of the magnesium-antimony-based thermoelectric material substrate layer by using the same process.
The transition layer alloy is an alloy of copper and titanium and/or magnesium, and comprises a copper-titanium alloy, a copper-magnesium alloy and a copper-titanium-magnesium alloy. The electrode layer metal is copper and/or nickel.
In a preferred embodiment of the present invention, the production method further comprises the step of producing a transition layer alloy target: weighing metal powder according to a chemical formula, ball-milling for 4-10 hours, placing the powder in a graphite die, and sintering in a spark plasma sintering device, wherein the sintering conditions comprise: and (3) raising the temperature to 500-600 ℃ at the speed of 20-80 ℃/min for sintering, wherein the sintering pressure is 30-50 MPa, the heat preservation time is 15-30 minutes, and then, cooling along with the furnace to obtain the required transition layer alloy target.
For example, in one particular embodiment, Mg2The preparation method of the Cu alloy target comprises the following steps: mg scraps and Cu powder are mixed according to the chemical formula of Mg2Ball-milling for 4-10 hours after weighing Cu, placing the powder in a graphite die in a spark plasma sintering device, wherein the sintering process comprises the following steps: heating to 500-600 ℃ at the speed of 20-80 ℃/min for sintering, wherein the sintering pressure is 30-50 MPa, the heat preservation time is 15-30 minutes, and then cooling along with the furnace to obtain the required Mg2A Cu target.
In still another aspect, the present invention further provides a thermoelectric refrigeration device, which includes an n-type thermoelectric element and a p-type bismuth telluride-based thermoelectric element assembled together, wherein the n-type thermoelectric element is the magnesium antimony-based thermoelectric element provided by the present invention.
The n-type thermoelectric element and the p-type bismuth telluride-based thermoelectric element can be assembled together through a conventional soldering process. The thermoelectric component prepared by matching the N-type magnesium antimony-based thermoelectric material and the P-type bismuth telluride can achieve the performance of the existing bismuth telluride-based thermoelectric refrigeration component, and meanwhile, the cost is greatly reduced. At present, the thermoelectric element and the preparation method thereof are rarely reported internationally.
The transition layer and the electrode layer which are developed by the invention and can be suitable for the magnesium antimony based thermoelectric material have important application significance and prospect, and the electrode layer enables the magnesium antimony based thermoelectric material to have an opportunity to enter the market and realize industrialization. Compared with the existing bismuth telluride thermoelectric devices in the market, the thermoelectric device prepared by the method has lower cost, can save rare element tellurium, and is beneficial to saving energy and protecting the environment. The magnesium antimony based thermoelectric material component provided by the invention can replace a bismuth telluride based thermoelectric refrigeration device in the existing market, can realize a new breakthrough on the cost of the existing commercial thermoelectric refrigeration device, and has great potential in the aspect of improving economic benefits.
Drawings
Embodiments of the invention are described in detail below with reference to the attached drawing figures, wherein:
fig. 1 is a schematic view of a magnesium antimony-based thermoelectric element according to the present invention.
Detailed Description
The present invention is described in further detail below with reference to specific embodiments, which are given for the purpose of illustration only and are not intended to limit the scope of the invention.
A schematic diagram of a magnesium antimony-based thermoelectric element according to the present invention is shown in fig. 1. The magnesium antimony-based thermoelectric element includes: a magnesium antimony based thermoelectric material substrate layer 1 positioned at the center of the thermoelectric element, two transition layers 21 and 22 attached to both surfaces of the substrate layer, and two electrode layers 31 and 32 attached to both transition layers, respectively.
Example 1
(1) Mg scraps, Mn powder, Bi particles, Sb particles and Te powder are mixed according to a chemical formula of Mg3.275Mn0.025Bi0.5Sb1.49Te0.01After weighing, the mixture was ball-milled for 12 hours to obtain a powder, which was sintered by discharge plasma into a cylindrical block material having a thickness of 1.2mm and a diameter of 12.7 mm. The sintering process comprises the following steps: the heating rate is 50 ℃ per minute, the temperature is kept at 600 ℃ for 2 minutes, then the temperature is increased to 800 ℃ and kept for two minutes, and then the furnace is cooled, and the pressure in the sintering process is 50 Mpa.
(2) Putting the magnesium antimony-based thermoelectric material substrate layer prepared in the step (1) into a beaker containing alcohol, cleaning for 5-10 minutes by using an ultrasonic cleaning instrument, then drying by using an electric blower or a drying device, and fixing the magnesium antimony-based thermoelectric material substrate layer to a material containing a copper target and TiCu after the treatment is finished0.3In the ion beam sputtering apparatus of the target, the working conditions are as follows: the energy of a main source is 900eV, and the beam current is 80 mA; the energy of the auxiliary source is 100eV, the beam current is 10mA, and the vacuum degree is less than 2.4 multiplied by 10-2Pa, formation of TiCu by ion beam sputtering0.3Of the transition layer of (2), switching off the TiCu after 5 minutes of codeposition0.3Continuing depositing the copper layer for 120 minutes by using a target to form an electrode layer; then closing the instrument and opening the chamberAnd taking out the sample, turning over the sample, fixing the sample again, and continuously depositing a transition layer and an electrode layer on the other surface of the magnesium-antimony-based thermoelectric material substrate layer by using the same process. The thickness of the transition layer is about 10nm and the thickness of the electrode layer is about 2 μm. The obtained sample is cut into small particles with the size of 1.45mm multiplied by 1.20mm, and the small particles are the magnesium-antimony based thermoelectric element.
(3) And (3) assembling the magnesium-antimony-based thermoelectric element prepared in the step (2) and the p-type bismuth telluride-based thermoelectric element with the size of 1.0mm multiplied by 1.20mm through a soldering tin process to prepare 127 pairs of thermoelectric arm refrigerating devices, and generating a temperature difference of more than 50 ℃ at a cold end and a hot end after passing through 12-volt direct current voltage, so that the commercial application standard can be met.
Example 2
(1) Mg scraps, Mn powder, Bi particles, Sb particles and Te powder are mixed according to a chemical formula of Mg3.275Mn0.025Bi0.5Sb1.49Te0.01After weighing, the mixture was ball-milled for 12 hours to obtain a powder, which was sintered by discharge plasma into a cylindrical block material having a thickness of 1.2mm and a diameter of 12.7 mm. The sintering process comprises the following steps: the heating rate is 50 ℃ per minute, the temperature is kept at 600 ℃ for 2 minutes, then the temperature is increased to 800 ℃ and kept for two minutes, and then the furnace is cooled, and the pressure in the sintering process is 50 Mpa.
(2) Putting the magnesium antimony-based thermoelectric material substrate layer prepared in the step (1) into a beaker containing alcohol, cleaning for 5-10 minutes by using an ultrasonic cleaning instrument, then drying by using an electric blower or a drying device, and fixing the magnesium antimony-based thermoelectric material substrate layer to a material containing a Ni target and TiCu after the treatment is finished0.2In the ion beam sputtering apparatus of the target, the working conditions are as follows: the energy of a main source is 900eV, and the beam current is 80 mA; the energy of the auxiliary source is 100eV, the beam current is 10mA, and the vacuum degree is less than 2.4 multiplied by 10-2Pa, formation of TiCu by ion beam sputtering0.2Of the transition layer of (2), switching off the TiCu after 5 minutes of codeposition0.2Continuing depositing the Ni layer for 180 minutes by using a target to form an electrode layer; and then closing the instrument, opening the chamber to take out the sample, turning over the sample, fixing the sample again, and continuously depositing a transition layer and an electrode layer on the other surface of the magnesium-antimony-based thermoelectric material substrate layer by using the same process. The thickness of the transition layer is about 10nm and the thickness of the electrode layer is about 3 μm. Cutting the obtained sampleThe magnesium-antimony based thermoelectric element of the present invention is obtained as small particles having a size of 1.45mm × 1.45mm × 1.20 mm.
(3) And (3) assembling the magnesium-antimony-based thermoelectric element prepared in the step (2) and the p-type bismuth telluride-based thermoelectric element with the size of 1.0mm multiplied by 1.20mm through a soldering tin process to prepare 127 pairs of thermoelectric arm refrigerating devices, and generating a temperature difference of more than 50 ℃ at a cold end and a hot end after passing through 12-volt direct current voltage, so that the commercial application standard can be met.
Example 3
(1) Mg scraps, Mn powder, Bi particles, Sb particles and Te powder are mixed according to a chemical formula of Mg3.275Mn0.025Bi0.5Sb1.49Te0.01Weighing, ball-milling for 12 hours to obtain mixture powder, and sintering the mixture powder into a cylindrical block magnesium-antimony-based thermoelectric material matrix layer with the thickness of 1.2mm and the diameter of 12.7mm by discharge plasma. The sintering process comprises the following steps: the heating rate is 50 ℃ per minute, the temperature is kept at 600 ℃ for 2 minutes, then the temperature is increased to 800 ℃ and kept for two minutes, and then the furnace is cooled, and the pressure in the sintering process is 50 Mpa.
(2) Mg scraps and Cu powder are mixed according to the chemical formula of Mg2Weighing Cu, ball-milling for 6 hours, placing the powder in a graphite die in a spark plasma sintering device, wherein the sintering process comprises the following steps: sintering at a speed of 50 ℃ per minute to 550 ℃, wherein the sintering pressure is 40MPa, the heat preservation time is 20 minutes, and then the Mg is prepared by furnace cooling2A Cu target.
(3) Putting the magnesium-antimony-based thermoelectric material substrate layer prepared in the step (1) into a beaker filled with alcohol, cleaning for 20 minutes by using an ultrasonic cleaning instrument, drying by using an electric blower or a drying device, and fixing to a copper target and Mg prepared in the step (2)2In a magnetron sputtering apparatus for a Cu target. Vacuumizing until the vacuum degree is less than 0.00066Pa, co-depositing the magnesium-copper alloy for about 5 minutes, adjusting the power to about 100W to form a magnesium-copper alloy transition layer, then turning off the magnesium target, continuously depositing a copper layer as an electrode material, adjusting the power to about 75W, and adjusting the time to about 50 minutes. After the copper layer deposition is finished, the instrument is turned off, the chamber is opened to take out the sample, after the sample is fixed again, the transition layer and the electrode layer are continuously deposited on the other surface of the magnesium-antimony-based thermoelectric material matrix layer by the same process. The thickness of the transition layer is 15nm, and the thickness of the electrode layer is 3-4 μm. The obtained sample is cut into small particles with the size of 1.45mm multiplied by 1.20mm, and the small particles are the magnesium-antimony based thermoelectric element.
(4) And (3) assembling the magnesium-antimony-based thermoelectric element prepared in the step (3) and the p-type bismuth telluride-based thermoelectric element with the size of 1.0mm multiplied by 1.20mm through a soldering tin process to prepare 127 pairs of thermoelectric arm refrigerating devices, and generating a temperature difference of more than 50 ℃ at a cold end and a hot end after passing through 12-volt direct current voltage, so that the commercial application standard can be met.
While particular embodiments of the present invention have been illustrated and described, it would be obvious to those skilled in the art that various other changes and modifications can be made without departing from the spirit and scope of the invention. It is therefore intended to cover in the appended claims all such changes and modifications that are within the scope of this invention.
Claims (15)
1. A magnesium antimony-based thermoelectric element, comprising: a Mg-Sb based thermoelectric material matrix layer in the center of the thermoelectric element, transition layers attached to two surfaces of the matrix layer, and two electrode layers respectively attached to the surfaces of the two transition layers, wherein the Mg-Sb based thermoelectric material comprises Mg3.3-xZxBi0.5Sb1.5-yTeyWherein x is more than or equal to 0 and less than or equal to 0.1, y is more than or equal to 0.01 and less than or equal to 0.05, Z is one or more elements selected from Mn, Ni, Cr and Nb, the transition layer is made of an alloy of copper and titanium and/or magnesium, the electrode layer is made of nickel, or the electrode layer is made of copper and nickel, and the thickness of the transition layer is 5-50 nm.
2. The magnesium antimony-based thermoelectric element according to claim 1, wherein the material of the transition layer is a titanium copper alloy or a magnesium copper alloy.
3. The magnesium antimony-based thermoelectric element according to claim 2, wherein the composition of the titanium copper alloy is TiCunN is more than 0 and less than or equal to 0.5, and the magnesium-copper alloy consists of MgmCu，0.5≤m≤3。
4. A magnesium antimony based thermoelectric element as claimed in any one of claims 1 to 3 wherein the thickness of the substrate layer is 0.5 to 2 mm.
5. A magnesium antimony-based thermoelectric element according to any one of claims 1 to 3, wherein the thickness of the electrode layer is 0.5 to 10 μm.
6. The magnesium antimony-based thermoelectric element according to claim 5, wherein the transition layer has a thickness of 5 to 20nm, and the electrode layer has a thickness of 0.5 to 5 μm.
7. The method of manufacturing a magnesium antimony-based thermoelectric element as claimed in any one of claims 1 to 6, the method comprising: and respectively forming the transition layer and the electrode layer on two surfaces of the magnesium-antimony-based thermoelectric material matrix layer by an ion beam sputtering and/or magnetron sputtering method to prepare the magnesium-antimony-based thermoelectric element.
8. The method of claim 7, wherein the method of ion beam sputtering comprises: fixing the magnesium-antimony-based thermoelectric material substrate layer in an ion beam sputtering instrument with a transition layer alloy target and an electrode layer metal target, firstly depositing transition layer alloy on one surface of the substrate layer to form a transition layer, and then depositing electrode layer metal to form an electrode layer; and then depositing a transition layer alloy on the other surface of the substrate layer to form a transition layer, and depositing an electrode layer metal to form an electrode layer to obtain the magnesium-antimony-based thermoelectric element.
9. The production method according to claim 7, wherein the magnetron sputtering method includes: fixing the magnesium-antimony-based thermoelectric material substrate layer in a magnetron sputtering instrument with a transition layer alloy target and an electrode layer metal target, firstly depositing transition layer alloy on one surface of the substrate layer to form a transition layer, and then depositing electrode layer metal to form an electrode layer; and then depositing a transition layer alloy on the other surface of the substrate layer to form a transition layer, and depositing an electrode layer metal to form an electrode layer to obtain the magnesium-antimony-based thermoelectric element.
10. The method of claim 8, wherein the operating conditions of the ion beam sputter include: the energy of a main source is 800-1000 eV, and the beam current is 60-100 mA; the energy of the auxiliary source is 90-120 eV, the beam current is 5-20 mA, and the vacuum degree is less than 2.4 multiplied by 10- 2Pa。
11. The method according to claim 8 or 10, wherein the deposition time of the transition layer is 2 to 10 minutes, and the deposition time of the electrode layer is 60 to 210 minutes.
12. The manufacturing method according to claim 9, wherein the operating conditions of the magnetron sputtering apparatus include: the vacuum degree is less than 0.00066Pa, and the power of the titanium copper alloy target is 90-110W or the power of the magnesium copper alloy target is 70-80W.
13. The preparation method according to claim 9 or 12, wherein the deposition time of the transition layer is 2 to 20 minutes, the deposition power of the electrode layer is 90 to 110W, and the deposition time is 20 to 60 minutes.
14. The production method according to claim 9, further comprising a step of producing a transition layer alloy target: weighing metal powder according to a chemical formula, ball-milling for 4-10 hours, placing the powder in a graphite die, and sintering in a spark plasma sintering device, wherein the sintering conditions comprise: and (3) raising the temperature to 500-600 ℃ at the speed of 20-80 ℃/min for sintering, wherein the sintering pressure is 30-50 MPa, the heat preservation time is 15-30 minutes, and then, cooling along with the furnace to obtain the required transition layer alloy target.
15. A thermoelectric cooling device comprising an n-type thermoelectric element and a p-type bismuth telluride-based thermoelectric element assembled together, wherein the n-type thermoelectric element is a magnesium antimony-based thermoelectric element as set forth in any one of claims 1 to 6 or a magnesium antimony-based thermoelectric element produced by the method as set forth in any one of claims 7 to 14.
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