CN110634988B - Method for weakening light attenuation of polycrystalline silicon solar cell - Google Patents
Method for weakening light attenuation of polycrystalline silicon solar cell Download PDFInfo
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- CN110634988B CN110634988B CN201910725867.6A CN201910725867A CN110634988B CN 110634988 B CN110634988 B CN 110634988B CN 201910725867 A CN201910725867 A CN 201910725867A CN 110634988 B CN110634988 B CN 110634988B
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- solar cell
- polycrystalline silicon
- silicon solar
- light attenuation
- voltage
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000003313 weakening effect Effects 0.000 title claims abstract description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims abstract description 18
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims abstract description 18
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for weakening light attenuation of a polycrystalline silicon solar cell. The PERC polycrystalline silicon solar cell piece is placed at the temperature of 150 ℃ and 250 ℃ and is positively applied with a voltage of 1-4V for 10 minutes. Then, the substrate is placed at the temperature of 300 ℃ and 550 ℃ and the voltage of 0.2-2V is applied reversely for 1 minute. The invention can reduce the light attenuation degree of the polycrystalline silicon solar cell to below 1%. The method can also realize grain boundary passivation of the polycrystalline silicon solar cell to a certain degree.
Description
Technical Field
The invention belongs to the field of photovoltaic solar energy, and particularly relates to a method for reducing the light attenuation degree of a polycrystalline silicon cell by using a positive and negative voltage alternating change heating process.
Background
Polysilicon cells, especially polysilicon PERC cells, are subject to severe light decay, which can reach 10% or more in 1000 hours, and have affected the efficiency of polysilicon solar cells. The light decay phenomenon of the polycrystalline silicon solar cell is under intensive research. The previous article reports that high light intensity, for example 44 suns, can be used to reduce the light decay of polysilicon solar cells, but the device fabrication process is complicated, and a large amount of heat is generated during the process, so that a special cooling device needs to be manufactured, and the device and the operation process are greatly complicated. In addition, the article reports that the temperature change in the sintering process can be changed to reduce the maximum sintering temperature and the cooling speed, and the light attenuation degree of the polysilicon PERC cell can be reduced by about 2%, but the method changes the traditional processing technology of the polysilicon PERC cell, so that the production process becomes complicated. Therefore, it is important to reduce the light decay of the polysilicon solar cell by a simple and effective process.
Disclosure of Invention
The invention aims to provide a method for reducing the light attenuation degree of a polycrystalline silicon solar cell aiming at the defects of the prior art, the method is simple and feasible, the light attenuation degree of the polycrystalline silicon PERC cell can be reduced to be within 1%, and the complexity of the production process of the existing polycrystalline silicon PERC cell can not be increased.
The method specifically comprises the following steps:
and (1) placing the polycrystalline silicon solar cell at the temperature of 150 ℃ and 250 ℃ and applying a voltage of 1-4V in the forward direction for 10 minutes. Preferably, the treatment is carried out at 175 ℃ and a forward voltage of 1V for 10 minutes.
And (2) reversely applying a voltage of 0.2-2V to the polycrystalline silicon solar cell in the step (1) at the temperature of 300-550 ℃ for 1 minute. Preferably, the treatment is carried out at 400 ℃ and a forward voltage of 0.3V for 1 minute.
The polycrystalline silicon solar cell is a PERC solar cell which is already made in the traditional process.
The invention has the beneficial effects that:
1. the operation process of the invention is simple and the requirement on equipment is low. The method has no harm to environment, and has possibility of industrial mass production.
2. The invention can reduce the light attenuation degree of the polycrystalline silicon solar cell to below 1%.
3. The method can also realize grain boundary passivation of the polycrystalline silicon solar cell to a certain degree.
Drawings
FIG. 1 is a graph of the voltage variation of the optical decay of polysilicon PERC solar cells after treatment in example 1 and untreated control samples;
fig. 2 is a graph of the change in efficiency of light decay for polysilicon PERC solar cells after treatment in example 1 and untreated control samples.
Detailed Description
The present invention is further analyzed with reference to the following specific examples.
The following PERC polycrystalline silicon solar cell is a PERC solar cell that has been made by a conventional process. The manufacturing process of the polycrystalline PERC solar cell piece comprises the following steps: firstly, phosphorus is diffused on P-type polycrystalline silicon to form an emitting layer with the square resistance of 100 omega/□, then after RCA cleaning, SiNx/H passivation layers are plated on two surfaces of a wafer, then the SiNx/H passivation layers are opened on the rear surface by laser, then aluminum paste is coated on the rear surface, then an Ag electrode is made on the front surface by a co-fining process, and an aluminum electrode is made on the rear surface, so that the polycrystalline silicon PERC solar cell is completed.
Example 1.
(1) The PERC polycrystalline silicon solar cell was placed on a heater, the heater was heated to 175 ℃, then a forward voltage of 1V was applied to the polycrystalline silicon solar cell for 10 minutes, and then the polycrystalline silicon solar cell was taken out of the heater.
(2) Heating the heater to 400 ℃, putting the polycrystalline silicon solar cell on the heater again, applying reverse voltage of 0.3V to the polycrystalline silicon solar cell for 1 minute, and taking the polycrystalline silicon solar cell out of the heater.
The control sample was a PERC polycrystalline silicon solar cell without any treatment.
FIG. 1 is a graph of the voltage variation of the optical decay of polysilicon PERC solar cells after treatment in example 1 and untreated control samples;
fig. 2 is a graph of the change in efficiency of light decay for polysilicon PERC solar cells after treatment in example 1 and untreated control samples.
Example 2.
Otherwise, as in example 1, the forward voltages applied were 2V and 4V, respectively, and the light attenuation was reduced to 1.5% or less and 1% or less, respectively.
Example 3.
Otherwise, as in example 1, the light attenuation can be reduced to below 1% by heating the heater to 150 deg.C and 250 deg.C respectively in step one.
Example 4.
Otherwise, as in example 1, the reverse voltages applied were 0.2V and 2V, respectively, and the light attenuation was reduced to 1% or less and 1.5% or less, respectively.
Example 5.
Otherwise, as in example 1, the light attenuation can be reduced to less than 1.5% and less than 2% by heating the heater to 300 deg.C and 550 deg.C respectively in step two.
The above embodiments are not intended to limit the present invention, and the present invention is not limited to the above embodiments, and all embodiments are within the scope of the present invention as long as the requirements of the present invention are met.
Claims (3)
1. A method for weakening the light attenuation of a polycrystalline silicon solar cell is characterized by comprising the following steps: the method specifically comprises the following steps:
step (1), placing the polycrystalline silicon solar cell at the temperature of 150 ℃ and 250 ℃ and applying a voltage of 1-4V in the forward direction for 10 minutes;
step (2), reversely applying a voltage of 0.2-2V to the polycrystalline silicon solar cell piece processed in the step (1) at the temperature of 300-550 ℃, and processing for 1 minute;
the polycrystalline silicon solar cell is a PERC solar cell.
2. The method for attenuating the light decay of a polycrystalline silicon solar cell as defined in claim 1, wherein: the temperature in the step (1) is 175 ℃, the forward voltage is 1V, and the treatment time is 10 minutes.
3. A method of attenuating the light decay of a polycrystalline silicon solar cell as claimed in claim 1 or 2, characterized in that: the temperature in the step (2) is 400 ℃, the forward voltage is 0.3V, and the treatment is carried out for 1 minute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910725867.6A CN110634988B (en) | 2019-08-07 | 2019-08-07 | Method for weakening light attenuation of polycrystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910725867.6A CN110634988B (en) | 2019-08-07 | 2019-08-07 | Method for weakening light attenuation of polycrystalline silicon solar cell |
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| CN110634988B true CN110634988B (en) | 2020-12-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111564523B (en) * | 2020-03-30 | 2021-10-22 | 浙江大学 | Method for inhibiting photoinduced attenuation of polycrystalline silicon solar cell at high temperature |
| CN112670372A (en) * | 2020-12-25 | 2021-04-16 | 浙江正泰太阳能科技有限公司 | Method for reducing series resistance of P-type crystalline silicon battery |
| CN113571605B (en) * | 2021-07-20 | 2023-12-29 | 泰州中来光电科技有限公司 | Method for eliminating hydrogen-induced attenuation of passivation contact solar cell and application |
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| US6870089B1 (en) * | 2002-11-12 | 2005-03-22 | Randolph Dean Gray | System and apparatus for charging an electronic device using solar energy |
| CN102005506B (en) * | 2010-10-18 | 2012-07-25 | 浙江大学 | Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof |
| CN205159348U (en) * | 2015-12-04 | 2016-04-13 | 常州时创能源科技有限公司 | Crystal silicon solar cell's defect passivation treating device |
| CN105789382A (en) * | 2016-05-20 | 2016-07-20 | 浙江晶科能源有限公司 | Method for improving light degradation of boron-doped crystalline silicon solar cell |
| CN106403592A (en) * | 2016-10-12 | 2017-02-15 | 浙江正泰太阳能科技有限公司 | Method for reducing light attenuation of PERC solar cell |
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