CN110629196A - CVD/PECVD equipment capable of continuously feeding and discharging materials in vacuum environment - Google Patents
CVD/PECVD equipment capable of continuously feeding and discharging materials in vacuum environment Download PDFInfo
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- CN110629196A CN110629196A CN201810726973.1A CN201810726973A CN110629196A CN 110629196 A CN110629196 A CN 110629196A CN 201810726973 A CN201810726973 A CN 201810726973A CN 110629196 A CN110629196 A CN 110629196A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a CVD/PECVD device capable of continuously feeding and discharging materials in a vacuum environment, which belongs to the technical field of Chemical Vapor Deposition (CVD) equipment and comprises three cavities, wherein the three cavities are respectively as follows: a feeding cavity, a reaction cavity and a cooling cavity; wherein, the reaction chamber is internally provided with an electric transmission mechanism, a temperature sensing assembly and a supporting mechanism; the feeding cavity and the cooling cavity are internally provided with a conveying system for the substrate material and the carrier thereof; wherein, each cavity is also provided with a gas transmission system and a gas extraction system. Through the technical scheme provided by the invention, the technical effect that the material can be fed and discharged without changing the temperature and the vacuum degree of the reaction chamber in the process of manufacturing the carbon material by CVD/PECVD is realized, the technical problem that the material can be discharged and refilled after the temperature of the reaction chamber is reduced and the atmospheric pressure is recovered in the conventional CVD/PECVD equipment is solved, and the production efficiency is improved.
Description
Technical Field
The invention belongs to the field of chemical vapor deposition equipment, and particularly relates to a CVD/PECVD device capable of continuously feeding and discharging materials in a vacuum environment.
Background
The chemical Vapor deposition cvd (chemical Vapor deposition) technique is widely used for the production of materials such as growth of graphene and plating of silicon nitride.
The existing chemical vapor deposition equipment is used for growing graphene, and is characterized in that a substrate material Ni or Cu is placed in a quartz cavity, and a graphene film is formed on the surface of a substrate by decomposing process gases CH4, ethane, ethylene and the like by utilizing high-frequency or radio-frequency electric field excitation under the condition of keeping high vacuum in the cavity. The deposition temperature is typically around 650 ℃. The enhanced chemical Vapor deposition by using the high-frequency or radio-frequency electric field excitation is called plasma enhanced chemical Vapor deposition PECVD (plasma enhanced chemical Vapor deposition), and the method can greatly reduce the temperature of the deposition reaction.
In the conventional PECVD device, after a batch of graphene or other carbon materials are grown, the high vacuum in the reaction cavity needs to be kept for cooling, otherwise, if air enters the cavity, the graphene film grown on the surface of the substrate is oxidized and deteriorated at a high temperature of hundreds of degrees centigrade. Therefore, in order to cool the reaction cavity, the furnace body outside the cavity needs to be cooled, so that heat loss and energy waste are caused, and more importantly, the production efficiency is low. In view of the above problems, there is a need for a CVD/PECVD apparatus that can continuously feed and discharge materials in a vacuum environment.
Disclosure of Invention
The invention aims at the problems of the existing CVD/PECVD device for growing graphene and other carbon materials, and provides the CVD/PECVD device which is efficient, reduces energy waste and can continuously feed and discharge materials in a vacuum environment. Comprises a reaction cavity; the feeding cavity is arranged at one end of the reaction cavity; and the cooling cavity is arranged at the other end of the reaction cavity.
Wherein, the reaction cavity comprises a quartz cavity body (2) and connecting flanges (24, 25) arranged at two ends, and vacuum cabin doors (4, 6, 5, 7) are respectively arranged at two ends of the feeding cavity and the cooling cavity.
Wherein, the reaction chamber includes: the quartz cavity (2) is arranged in the tubular heating furnace (28) and is made of quartz; the first connecting flange (24) is arranged on one side close to the cavity of the feeding cavity (1), is made of stainless steel and is fixedly connected with the vacuum cabin door (4) of the feeding cavity through bolts; the second connecting flange (25) is arranged on one side close to the cavity of the cooling cavity (3) and is made of stainless steel; is fixedly connected with a vacuum cabin door (5) of the cooling cavity through a bolt;
wherein, the side of the first connecting flange is provided with a vacuum electrode (13), and the side of the second connecting flange is provided with a vacuum electrode (31).
Wherein, the side of the first connecting flange is provided with a support frame (30), and the side of the second connecting flange is provided with a support frame (29).
The side surface of the first connecting flange is also provided with an air inlet (23), and the side surface of the first connecting flange is also provided with an air outlet (21) and a vacuum degree testing instrument interface (22).
Wherein, the reaction cavity is internally provided with an electric transmission mechanism (32) which is arranged at the bottom in the cavity body of the reaction cavity and used for transmitting electricity; the electric transmission mechanism is connected to an external power transmission circuit through a vacuum electrode (13) arranged on the side surface (24) of the connecting flange.
Wherein, the reaction cavity is also internally provided with a temperature sensing component (14) which is arranged at the bottom in the reaction cavity body and used for sensing the temperature in the reaction cavity body; the temperature sensing component (14) is connected to an external control circuit through a vacuum electrode (31) arranged on the side surface of the connecting flange (25).
The reaction cavity is internally provided with a support mechanism which is arranged at the bottom in the reaction cavity body and used for supporting a substrate material and a carrier thereof; the supporting mechanism comprises two supporting rods (12). Two ends of the support rod (12) are fixedly connected to the support frames (29, 30) on the side surfaces of the connecting flanges (24, 25).
Wherein, the feeding chamber still includes: a feeding cavity body (1); and the first conveying system is arranged in the feeding cavity and is used for bearing and pushing the substrate material and the carrier thereof.
Wherein, the cooling chamber still includes: a cooling cavity body (3); and the second conveying system is arranged in the cooling cavity and is used for bearing and pulling out the substrate material and the carrier thereof.
Wherein the first and second transport systems comprise: support rods (15, 16), fixed brackets (8, 10), slide rails (9, 11) and respective power mechanisms. The supporting rod (15/16) is fixed on the fixed bracket (8/10), the fixed bracket (8/10) is arranged on the sliding rail (9/11) in a sliding mode, and the power mechanism controls the fixed bracket (8/10) to move on the sliding rail (9/11).
Wherein, the support rods (12, 15, 16) are made of high-temperature resistant and high-strength materials.
Wherein, the support rods (12, 15, 16) are made of silicon carbide.
Wherein the temperature range in the cavity of the reaction cavity is 400-1000 ℃.
The cooling cavity can be provided with a cooling system inside or outside the cavity body to help cooling. The cooling system can be an air inlet for cooling air, a cooling plate arranged outside the cooling cavity, a cooling medium circulating system and the like.
Wherein, the cooling chamber can also help substrate material and its carrier cooling through letting in cooling media such as inert gas in to the cavity, inert gas can be: nitrogen, argon, helium, and the like, and mixed gases of two or more thereof.
Wherein, the feeding cavity, the reaction cavity and the cooling cavity are all connected with respective vacuum pumps and vacuum degree test instruments.
Wherein, the carrier of the substrate material can fix the substrate material and resist high temperature.
According to another aspect of the present invention, by providing a PECVD apparatus comprising the above-mentioned device capable of continuously feeding and discharging materials under vacuum environment, the carrier of the substrate material is a graphite boat type carrier, and is connected with an external radio frequency power supply through an electric transmission mechanism (32) arranged in the reaction chamber.
According to the technical scheme, the invention has the advantages that three cavities are arranged: the feeding cavity, the reaction cavity and the cooling cavity are matched with various mechanisms in each cavity, so that feeding and discharging of materials into and out of the reaction cavity are realized continuously, frequent cooling/heating processes of a heating furnace body are avoided, and a continuous growth process of carbon materials under CVD/PECVD is realized. The production efficiency is improved, and the energy consumption is reduced.
Drawings
A more complete understanding of the present invention, and the attendant advantages and features thereof, will be more readily understood by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:
fig. 1 is a schematic overall structure diagram of a PECVD apparatus capable of continuously feeding and discharging materials in a vacuum environment according to an embodiment of the present invention.
FIG. 2 is a schematic feed diagram of a feed chamber according to an embodiment of the present invention.
FIG. 3 is a schematic feed diagram of a feed chamber according to an embodiment of the present invention.
FIG. 4 is a schematic diagram of a graphite boat during a deposition reaction in a reaction chamber according to an embodiment of the present invention.
FIG. 5 is a schematic view of a cooling chamber pulled graphite boat in accordance with an embodiment of the present invention.
FIG. 6 is a schematic view of the graphite boat being removed from the cooling chamber according to the embodiment of the present invention.
FIG. 7 is a schematic diagram of an embodiment of the present invention when fully operational.
The reference numerals in the figures denote: 1. a feeding cavity body; 2. a quartz chamber; 3. a cooling cavity body; 4. a second door; 5. a third hatch 6, a first hatch; 7. a fourth door; 8. 10, fixing a bracket; 9. 11, a slide rail; 12. a support bar; 14. a temperature sensing assembly; 15. 16, a support rod; 17. 19, 22, a vacuum degree testing device interface; 18. 20, 21, a vacuum pump interface; 23. a gas path interface; 24. a first connecting flange; 25. a second connecting flange; 26. 27, a deflation valve; 28. a tubular heating furnace; 29. 30, fixing a bracket; 13. 31, a vacuum electrode; 32. an electrical transmission mechanism.
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention. The present invention is described in detail with reference to the drawings, and the drawings are not to be considered as limiting the invention, but are enlarged partially in accordance with the general scale for convenience of explanation.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a PECVD apparatus capable of continuously feeding and discharging materials in a vacuum environment according to an embodiment of the present invention. The invention provides a device for PECVD continuous feeding and discharging, which comprises a reaction cavity; the feeding cavity is arranged at one end of the reaction cavity; and the cooling cavity is arranged at the other end of the reaction cavity.
Wherein, the reaction cavity comprises a quartz cavity body (2) and connecting flanges (24, 25) arranged at two ends, and vacuum cabin doors (4, 6, 5, 7) are respectively arranged at two ends of the feeding cavity and the cooling cavity.
Wherein, the reaction chamber includes: the quartz cavity (2) is arranged in the tubular heating furnace (28) and is made of quartz; the first connecting flange (24) is arranged on one side close to the cavity of the feeding cavity (1), is made of stainless steel and is fixedly connected with the vacuum cabin door (4) of the feeding cavity through bolts; the second connecting flange (25) is arranged on one side close to the cavity of the cooling cavity (3) and is made of stainless steel; is fixedly connected with a vacuum cabin door (5) of the cooling cavity through a bolt;
wherein, the side of the first connecting flange is provided with a vacuum electrode (13), and the side of the second connecting flange is provided with a vacuum electrode (31).
Wherein, the side of the first connecting flange is provided with a support frame (30), and the side of the second connecting flange is provided with a support frame (29).
The side surface of the first connecting flange is also provided with an air inlet (23), and the side surface of the first connecting flange is also provided with an air outlet (21) and a vacuum degree testing instrument interface (22).
Wherein, the reaction cavity is internally provided with an electric transmission mechanism (32) which is arranged at the bottom in the cavity body of the reaction cavity and used for transmitting electricity; the electric transmission mechanism is connected to an external power transmission circuit through a vacuum electrode (13) arranged on the side surface (24) of the connecting flange.
Wherein, the reaction cavity is also internally provided with a temperature sensing component (14) which is arranged at the bottom in the reaction cavity body and used for sensing the temperature in the reaction cavity body; the temperature sensing component (14) is connected to an external control circuit through a vacuum electrode (31) arranged on the side surface of the connecting flange (25).
The reaction cavity is internally provided with a support mechanism which is arranged at the bottom in the reaction cavity body and used for supporting a substrate material and a carrier thereof; the supporting mechanism comprises two supporting rods (12). Two ends of the support rod (12) are fixedly connected to the support frames (29, 30) on the side surfaces of the connecting flanges (24, 25).
Wherein, the feeding chamber still includes: a feeding cavity body (1); and the first conveying system is arranged in the feeding cavity and is used for bearing and pushing the substrate material and the carrier thereof.
Wherein, the cooling chamber still includes: a cooling cavity body (3); and the second conveying system is arranged in the cooling cavity and is used for bearing and pulling out the substrate material and the carrier thereof.
Wherein the first and second transport systems comprise: support rods (15, 16), fixed brackets (8, 10), slide rails (9, 11) and respective power mechanisms. The supporting rod (15/16) is fixed on the fixed bracket (8/10), the fixed bracket (8/10) is arranged on the sliding rail (9/11) in a sliding mode, and the power mechanism controls the fixed bracket (8/10) to move on the sliding rail (9/11).
Wherein, the support rods (12, 15, 16) are made of high-temperature resistant and high-strength materials.
Wherein, the support rods (12, 15, 16) are made of silicon carbide.
Wherein the temperature range in the cavity of the reaction cavity is 400-1000 ℃.
The cooling cavity can be provided with a cooling system inside or outside the cavity body to help cooling. The cooling system can be an air inlet for cooling air, a cooling plate arranged outside the cooling cavity, a cooling medium circulating system and the like.
Wherein, but the chamber can also help substrate material and its carrier cooling through letting in cooling media such as inert gas in to the cavity, inert gas can be: nitrogen, argon, helium, and the like, and mixed gases of two or more thereof.
Wherein, the feeding cavity, the reaction cavity and the cooling cavity are all connected with respective vacuum pumps and vacuum degree test instruments.
Wherein, the carrier of the substrate material can fix the substrate material and resist high temperature.
Wherein, the carrier of the substrate material is a graphite boat, and is connected with an external radio frequency power supply through the electric transmission mechanism (32) arranged in the reaction cavity.
Wherein the feeding cavity is provided with a gas release valve (26); the cooling cavity is provided with a relief valve (27).
In summary, the CVD/PECVD apparatus capable of continuously feeding and discharging materials in a vacuum environment provided by the present invention comprises three chambers: the feeding cavity, the reaction cavity and the cooling cavity are matched with various mechanisms in each cavity, so that feeding and discharging of materials into and out of the reaction cavity are realized continuously, frequent cooling/heating processes of a heating furnace body are avoided, and a continuous growth process of carbon materials under CVD/PECVD is realized. The production efficiency is improved, and the energy consumption is reduced.
In addition, it should be noted that the terms "first", "second", "third", and the like in the specification are used for distinguishing various components, elements, steps, and the like in the specification, and are not used for indicating a logical relationship or a sequential relationship between the various components, elements, steps, and the like, unless otherwise specified or indicated.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (19)
1. A CVD apparatus capable of continuous feed and discharge in a vacuum environment, comprising: a reaction chamber; the feeding cavity is arranged at one end of the reaction cavity; the cooling cavity is arranged at the other end of the reaction cavity and is characterized in that the reaction cavity comprises a quartz cavity and connecting flanges arranged at two ends of the quartz cavity, and vacuum cabin doors (4, 6, 5 and 7) are respectively arranged at two ends of the feeding cavity and two ends of the cooling cavity.
2. A CVD apparatus capable of continuous feeding and discharging under a vacuum environment according to claim 1, wherein the reaction chamber comprises: the quartz cavity (2) is arranged in the tubular heating furnace (28) and is made of quartz; the first connecting flange (24) is arranged on one side close to the cavity of the feeding cavity (1) and is fixedly connected with the vacuum cabin door (4) of the feeding cavity through bolts; and the second connecting flange (25) is arranged at one side close to the cavity of the cooling cavity (3) and is fixedly connected with the vacuum cabin door (5) of the cooling cavity through bolts.
3. A CVD apparatus according to claims 1-2, wherein a vacuum electrode (13) is provided on a side surface of the first connection flange, and a vacuum electrode (31) is provided on a side surface of the second connection flange.
4. A CVD device capable of continuously feeding and discharging materials in a vacuum environment according to claims 1-2, characterized in that a support frame (30) is provided on the side of the first connecting flange, and a support frame (29) is provided on the side of the second connecting flange.
5. The CVD device capable of continuously feeding and discharging materials in a vacuum environment according to claims 1-2, wherein a gas inlet (23) is further provided on a side surface of the first connecting flange, and a gas outlet (21) and a vacuum degree testing instrument interface (22) are further provided on a side surface of the first connecting flange.
6. A CVD apparatus capable of continuously feeding and discharging materials in a vacuum environment according to claims 1-5, wherein an electric transmission mechanism (32) is arranged in the reaction chamber and at the bottom of the reaction chamber for transmitting electricity; the electric transmission mechanism is connected to an external power transmission circuit through the vacuum electrode (13) arranged on the side surface (24) of the connecting flange.
7. The CVD device capable of continuously feeding and discharging materials in a vacuum environment according to claims 1-5, wherein a temperature sensing component (14) is further arranged in the reaction cavity, is arranged at the bottom in the reaction cavity and is used for sensing the temperature in the reaction cavity; the temperature sensing component (14) is connected to an external control circuit through the vacuum electrode (31) arranged on the side surface of the connecting flange (25).
8. The CVD apparatus according to claims 1 to 5, wherein a support mechanism is further provided in the reaction chamber, and is disposed at the bottom of the reaction chamber for supporting the substrate and the carrier; the supporting mechanism comprises two supporting rods (12). Two ends of the supporting rod (12) are fixedly connected to the supporting frames (29, 30) on the side surfaces of the connecting flanges (24, 25).
9. A CVD apparatus capable of continuous feeding and discharging under a vacuum environment according to claim 1, wherein the feeding chamber further comprises: a feeding cavity body (1); and the first conveying system is arranged in the feeding cavity and is used for bearing and pushing the substrate material and the carrier thereof.
10. The CVD apparatus capable of continuous feeding and discharging under vacuum environment according to claim 1, wherein the cooling chamber further comprises: a cooling cavity body (3); and the second conveying system is arranged in the cooling cavity and is used for bearing and pulling out the substrate material and the carrier thereof.
11. A CVD apparatus capable of continuous feeding and discharging under a vacuum environment according to claim 9 and claim 10, wherein the first and second transport systems comprise: support rods (15, 16), fixed brackets (8, 10), slide rails (9, 11) and respective power mechanisms. The supporting rod (15/16) is fixed on the fixed support (8/10), the fixed support (8/10) is arranged on the sliding rail (9/11) in a sliding mode, and the power mechanism controls the fixed support (8/10) to move on the sliding rail (9/11).
12. A CVD apparatus according to claim 8 or 11, wherein the support rods (12, 15, 16) are made of high temperature resistant and high strength material.
13. A CVD apparatus according to claim 12, wherein the support rods (12, 15, 16) are made of silicon carbide.
14. A CVD apparatus according to claims 1 to 13, wherein the temperature in the reaction chamber is 400 ℃ to 1000 ℃.
15. A CVD apparatus according to claims 1 to 14, wherein the cooling chamber is further provided with a cooling system inside or outside the chamber to assist cooling. The cooling system can be an air inlet for cooling air, a cooling plate arranged outside the cooling cavity, a cooling medium circulating system and the like.
16. The CVD apparatus according to claims 1 to 15, wherein the cooling chamber is further configured to introduce a cooling medium such as an inert gas into the chamber to help cool the substrate and the carrier, and the inert gas is: nitrogen, argon, helium, and the like, and mixed gases of two or more thereof.
17. A CVD apparatus according to claim 1, wherein the feed chamber, the reaction chamber and the cooling chamber are connected to a vacuum pump and a vacuum degree measuring device.
18. A CVD apparatus according to any preceding claim, wherein the carrier is capable of holding a substrate and withstanding high temperatures.
19. PECVD apparatus, characterized in that, based on the device that comprises any of claims 1 to 18 and can be fed and discharged continuously in a vacuum environment, the carrier of the substrate material is a graphite boat type carrier, which is fixed by a support frame and is connected to an external radio frequency power source by the electric transmission mechanism (32) arranged in the reaction chamber.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810726973.1A CN110629196A (en) | 2018-06-25 | 2018-06-25 | CVD/PECVD equipment capable of continuously feeding and discharging materials in vacuum environment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810726973.1A CN110629196A (en) | 2018-06-25 | 2018-06-25 | CVD/PECVD equipment capable of continuously feeding and discharging materials in vacuum environment |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2666929Y (en) * | 2003-12-03 | 2004-12-29 | 刘晓荫 | Radio frequency electric power leading-in apparatus |
| CN102275907A (en) * | 2011-06-09 | 2011-12-14 | 无锡第六元素高科技发展有限公司 | Method for preparing graphene through high temperature atomic dialysis based on chemical vapor deposition |
| CN106119806A (en) * | 2016-06-27 | 2016-11-16 | 重庆墨希科技有限公司 | A kind of continuous-flow type continuous Large-scale graphene film preparation device |
-
2018
- 2018-06-25 CN CN201810726973.1A patent/CN110629196A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2666929Y (en) * | 2003-12-03 | 2004-12-29 | 刘晓荫 | Radio frequency electric power leading-in apparatus |
| CN102275907A (en) * | 2011-06-09 | 2011-12-14 | 无锡第六元素高科技发展有限公司 | Method for preparing graphene through high temperature atomic dialysis based on chemical vapor deposition |
| CN106119806A (en) * | 2016-06-27 | 2016-11-16 | 重庆墨希科技有限公司 | A kind of continuous-flow type continuous Large-scale graphene film preparation device |
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Address after: 510623 Room 201, building B7, No. 11, Kaiyuan Avenue, Science City, Guangzhou high tech Industrial Development Zone, Guangdong Province Applicant after: GUANGZHOU MOXI TECHNOLOGY Co.,Ltd. Address before: 510623 1001, 10 / F, Xingguang Yingjing a center, NO.119 Shuiyin Road, Yuexiu District, Guangzhou, Guangdong Province Applicant before: GUANGZHOU MOXI TECHNOLOGY Co.,Ltd. |
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| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191231 |