CN110628432A - LYSO scintillator and preparation method and device using same - Google Patents
LYSO scintillator and preparation method and device using same Download PDFInfo
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Abstract
The invention relates to scintillator crystals and their use for gamma-ray detection in the high-energy physical, medical and petroleum industries, scintillators based on silicates containing lutetium and cerium being characterized by a composition of the formula Lu2(1‑x‑y)Y2yCe2xSizO3+2zThe scintillator with the chemical formula can be in the form of single crystal or polycrystal, and the technical result of the invention is that the scintillator crystal is used in ionizing radiation detection, and the scintillator has high density, high light output, low afterglow and low energy consumption. Radiation detectors utilizing the scintillator crystals are also described, as well as related methods of detecting high-energy radiation.
Description
Technical Field
The present invention relates to materials and devices for detecting ionizing radiation, in each case scintillator crystals for the detection of gamma-rays (gamma-rays) and X-rays (X-rays), and in particular to a LYSO scintillator, a method for its preparation and a device for its use.
Background
There are a number of techniques that can be used to detect ionizing radiation and scintillator crystals are of great interest because of the simplicity and accuracy of the detection method. Thus, scintillator crystals are widely used for detecting high-energy particles with energy levels above 1 keV. A detector can be made using a scintillator crystal that is connected to a photodetector device and emits light when high energy particles from a radiation source strike the crystal. The photodetector produces an electrical signal proportional to the number of received light pulses and their intensity, i.e., the detection of ionizing radiation is achieved with a scintillator crystal. The device has important application in medical imaging, oil logging device, deep space exploration and the like.
The indices of the constant scintillator crystal's ability to detect ionizing radiation include light yield, energy resolution, decay time, afterglow, and stopping power. Where the light yield is the number of photons excited by the scintillator upon exposure to ionizing radiation. Since this criterion can improve the ability of the radiation detector to convert light into electrical pulses, a higher criterion is better. For many applications, it is desirable to obtain an effective count in a short time, so a faster decay time is desirable. The stopping power of the ray is related to the density and effective atomic number of the scintillator crystal, the higher the density and the larger the effective atomic number, the higher the stopping power of the scintillator crystal, the smaller the volume required for stopping the same dose of high-energy particles, so the larger the stopping power, the better the stopping power. Ionizing radiation detection has some applications where it is the case that high energy particles of different energies are detected, which requires materials with lower energy resolution to distinguish between different high energy particles.
Cerium (Ce) -doped lutetium yttrium silicate crystals (LYSO) (Ce: LYSO, U.S. Pat. No. 6,624,420B1 for short) are known rare earth silicate scintillators in which LYSO is the matrix material and cerium is the activator. The scintillator crystal has a high density of>7.15g/cm3) High light yield (38000 phototons/MeV), short decay time (40 ns), fast response and high energy resolution (<10%) and the like. The gamma-ray detector made of the crystal has very wide application prospect in the fields of nuclear medicine imaging, high-energy physics, nuclear physics and the like, and is a core detection component in a new generation of Positron Emission Tomography (PET for short). After the Ce: LYSO patent was generated, a great deal of research was conducted on such scintillator crystals, and a solid-to-liquid ratio LYSO crystal (US 7,132,060B 2) and a LYSO crystal-doped patent (US10274616B2) were generated. Typically, LYSO scintillator crystals are prepared by melt processes, such as the Czochralski or Czochralski method, and such crystals are prepared byThe method requires the addition of rare earth oxide (Re)2O3) And silicon dioxide (SiO)2) Weighing according to stoichiometric proportion, sintering to form phase, and placing in a crystal growth furnace for growth. The melting points of LSO and LYSO crystals are high and are above 2050 ℃, so that the crucible material adopted is noble metal iridium (Ir), and in order to reduce the loss of Ir, a small amount of oxygen is added in the general growth process to control the growth environment of the crystals. In the Ce: LYSO crystal, the activator Ce has valence-variable Ce3+/Ce4+And Ce4+Too much will deteriorate the light transmittance at 420nm and reduce the scintillation properties of the crystal. In addition, in the crystal growth, the high melting point stoichiometric ratio crystal is easy to crack in the growth, which is also a main reason of low crystal yield and high cost.
In the crystal growth, the high-melting-point stoichiometric ratio crystal is easy to crack in the growth process, and the main reasons of low crystal yield and high cost are also. The crystal afterglow growing according to the metering proportion in the patent US6,624,420B1 and the US 7,132,060B2 is serious, and the performance of the whole machine can be influenced after the crystal afterglow is spliced into an array and used for PET-CT. In order to solve the problem, a great deal of research is carried out, and the inventor finds that when the solid-phase reaction of the mixed sintering materials of SiO2, Lu2O3 and Y2O3 is not complete, a certain layering phenomenon occurs in the crystal growth process, namely the upper layer in the melt is rich in silicon, and the lower layer is rich in lutetium and yttrium, but in the case, the performance of the upper half part of the crystal is obviously better than that of the lower half part, and the afterglow is small2The performance of the grown LYSO crystal is more excellent.
Disclosure of Invention
Based on the defect of strong afterglow of the existing LYSO crystal, the invention aims to provide a LYSO scintillator, a preparation method thereof and a device using the same; its properties include a silicon-rich LYSO scintillator crystal material and its corresponding radiation detector and associated methods for detecting high-energy radiation.
The inventors have discovered that adding excess SiO to LYSO crystals2The temperature for crystal growth can be reduced, and the valence state proportion of Ce can be reasonably controlled. In addition, the Si-rich crystal can reduce the crystal growth temperature, so that the crystal cracking is inhibited, and the crystal afterglow is obtainedTo inhibition.
The LYSO scintillator of the present invention is characterized in that the chemical formula of the crystal is: lu (Lu)2(1-x-y)Y2yCe2xSizO3+2zWherein x is 0.05-2%, y is 0.1-20%, and z is 1.01-1.2.
Further, the raw material of LYSO scintillator comprises Y2O3、SiO2Activator, Lu2O3、CeO2;Y2O3With SiO2In a molar ratio of 1:1.01 to 1: 1.2; the activator is CeO2Or Ce2O3Or CeO may be formed at high temperature2Or Ce2O3The material of (a); lu (Lu)2O3、Y2O3、CeO2In a molar ratio of 99.85:0.1:0.025 to 78:20:1, or Lu2O3、Y2O3、Ce2O3In a molar ratio of 99.85:0.1:0.05 to 78:20: 2.
The invention also discloses a preparation method of the LYSO scintillator, which is characterized by comprising the following steps:
step S1: raw material proportioning: according to the molar ratio, 0.895-0.925 parts of Lu2O30.07-0.1 part of Y2O30.01 part of CeO2And 1.01-1.10 parts of SiO2Weighing at a certain ratio, and placing into a container for uniform mixing;
step S2: solid-phase reaction: pressing the raw materials in the step S1 into blocks at room temperature under 200MPa, and calcining the blocks in a muffle furnace at 1400 ℃ for 40 hours to generate corresponding phases;
step S3: crystal growth: and (4) putting the corresponding phase generated in the step (S2) into a crystal growing furnace for growing, wherein the growing process parameters are as follows: under the condition of argon, the seed crystal is oriented to the <001> direction or the <010> direction or the <100> direction, the pulling speed is 1.2mm-1.5 mm/h, the rotating speed is 5-10 r/min, and the crystal grows in an isodiametric way: and after the crystal growth is finished, cooling to room temperature and taking out.
Step S4: and (3) crystal processing: the crystal in step S3 is cut into a columnar shape and polished.
Step S5: and (3) crystal testing: and (5) carrying out the tests of the light yield, the energy resolution and the afterglow on the crystal in the step S4 on test equipment.
Step S6: the crystal application comprises the following steps: and (5) preparing the polished crystal in the step S5 into an array, and coupling the array with a photomultiplier through silicone oil to prepare the radiation detector.
The LYSO scintillator of the present invention, Lu, is applied to a radiation detector for detecting high-energy radiation2(1-x-y)Y2yCe2xSizO3+2zWherein x is 0.05-2%, y is 0.1-20%, and z is 1.01-1.2;
high energy radiation includes X-rays, gamma-rays, and alpha-rays;
the activated LYSO scintillator receives radiation, thereby generating photons indicative of the radiation characteristic;
a photodetector optically coupled to the LYSO scintillator generates an electrical signal in response to emission of a light pulse generated by the LYSO scintillator.
The invention also discloses a method for detecting high-energy radiation by the radiation detector, which comprises the following steps:
step S11: receiving radiation from the activated LYSO scintillator to produce photons indicative of the radiation characteristic;
step S12: detecting photons of step S11 with a photon detector coupled to the LYSO scintillator, which is Lu2(1-x-y)Y2yCe2xSizO3+2zWherein x is 0.05-2%, y is 0.1-20%, and z is 1.01-1.2.
Another embodiment of the invention relates to a radiation detector for detecting high-energy radiation, such as gamma rays. The main component of such a detector is the scintillator crystal material described above, which is present as a single crystal. Photodetectors (such as photomultiplier tubes and semiconductor detectors) are associated with the scintillator crystal. The scintillator crystal can repeatedly produce scintillation in response to gamma radiation. Radiation detectors of this type may be used in a variety of radiation detection devices, such as well-bore tools and nuclear medicine imaging devices Positron Emission Tomography (PET).
The present invention also relates to a process for preparing the present scintillator crystal material by a fusion process, further details regarding the features of the present invention can be found in the examples in the specification that follow.
Drawings
FIG. 1 is a flow chart of a production process of the present invention;
fig. 2 is a flow chart of a method of detecting high-energy radiation by a radiation detector in the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
S1: 0.895 part of Lu is added according to the molar ratio2O30.1 part of Y2O30.01 part of CeO2And 1.01 parts of SiO2Proportioning and weighing, loading into a container, uniformly mixing,
s2: pressing the raw materials into blocks at room temperature under 200MPa, and calcining the blocks in a muffle furnace at 1400 ℃ for 40 hours to generate corresponding phases.
S3: putting the crystal into a crystal growth furnace of a Czochralski method for growth, wherein the growth process parameters are as follows: under argon, the seed crystal was oriented in the <001> direction, pulled at a rate of 1.5 mm/hr, and rotated at a rate of 10 rpm.
S4: the isometric growth of the crystal is regulated by a PID algorithm, the crystal is extracted from the melt after the crystal grows to 80mm, annealing is carried out, and the crystal is taken out at room temperature.
S5: and cutting the grown crystal into a columnar shape, and polishing.
S6: and preparing the polished crystal into an array, and coupling the array with a photomultiplier through silicone oil to prepare the radiation detector.
Example 2
The difference from example 1 is as follows:
s1: according to the molar ratio, 0.915 part of Lu is added2O30.08 part of Y2O30.01 part of CeO2And 1.05 parts of SiO2Proportioning and weighing, loading into a container, uniformly mixing,
s2: pressing the raw materials into blocks at room temperature under 300MPa, and calcining the blocks in a muffle furnace at 1200 ℃ for 60 hours to generate corresponding phases.
S3: putting the crystal into a crystal growth furnace of a Czochralski method for growth, wherein the growth process parameters are as follows: under argon, the seed crystal was oriented in the <010> direction, the pulling rate was 1.2 mm/hr, and the rotation speed was 8 rpm.
S4: the isometric growth of the crystal is regulated by a PID algorithm, the crystal is extracted from the melt after the isometric growth of the crystal reaches 90mm, annealing is carried out, and the crystal is taken out at room temperature.
Example 3
The difference from example 1 is as follows:
s1: 0.925 parts of Lu according to the molar ratio2O30.07 part of Y2O30.01 part of CeO2And 1.10 parts of SiO2Proportioning and weighing, loading into a container, uniformly mixing,
s2: pressing the raw materials into blocks at room temperature under 500MPa, and calcining the blocks in a muffle furnace at 1200 ℃ for 60 hours to generate corresponding phases.
S3: putting the crystal into a crystal growth furnace of a Czochralski method for growth, wherein the growth process parameters are as follows: under argon, the seed crystal was oriented in the <100> direction, the pulling speed was 1.2 mm/hr, and the rotation speed was 5 rpm.
S4: the isometric growth of the crystal is regulated by a PID algorithm, the crystal is extracted from the melt after the isometric growth of the crystal reaches 85mm, annealing is carried out, and the crystal is taken out at room temperature.
The following table is a scintillation performance analysis of the scintillator crystals obtained in examples 1 to 3:
as can be seen from the above table, the present invention effectively improves the scintillation performance of scintillator crystals, including both the light yield and the energy resolution, by increasing the proportion of Si in the LYSO crystals.
As embodiments of the invention, it will be apparent to those skilled in the art that the invention is not limited to the details of the above-described exemplary embodiments, and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof, and within the scope of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. A LYSO scintillator, wherein said crystal has the formula: lu (Lu)2(1-x-y)Y2yCe2xSizO3+2zWherein x is 0.05-2%, y is 0.1-20%, and z is 1.01-1.2.
2. The LYSO scintillator of claim 1, wherein the source material comprises Y2O3、SiO2Activator, Lu2O3、CeO2(ii) a Y2O3 and SiO2In a molar ratio of 1:1.01 to 1: 1.2; the activator is CeO2Or Ce2O3Or CeO may be formed at high temperature2Or Ce2O3The material of (a); lu (Lu)2O3、Y2O3、CeO2In a molar ratio of 99.85:0.1:0.025 to 78:20:1, or Lu2O3、Y2O3、Ce2O3In a molar ratio of 99.85:0.1:0.05 to 78:20: 2.
3. The method of claim 1, comprising the steps of:
step S1: raw material proportioning: according to the molar ratio, 0.895-0.925 parts of Lu2O30.07-0.1 part of Y2O30.01 part of CeO2 and 1.01-1.10 parts of SiO2 are proportioned and weighed, and then the weighed materials are put into a container to be uniformly mixed;
step S2: solid-phase reaction: pressing the raw materials in the step S1 into blocks at room temperature under 200MPa, and calcining the blocks in a muffle furnace at 1400 ℃ for 40 hours to generate corresponding phases;
step S3: crystal growth: and (4) putting the corresponding phase generated in the step (S2) into a crystal growing furnace for growing, wherein the growing process parameters are as follows: under the condition of argon, the seed crystal is oriented to the <001> direction or the <010> direction or the <100> direction, the pulling speed is 1.2mm-1.5 mm/h, the rotating speed is 5-10 r/min, and the crystal grows in an isodiametric way: and after the crystal growth is finished, cooling to room temperature and taking out.
Step S4: and (3) crystal processing: the crystal in step S3 is cut into a columnar shape and polished.
Step S5: and (3) crystal testing: and (5) carrying out the tests of the light yield, the energy resolution and the afterglow on the crystal in the step S4 on test equipment.
Step S6: the crystal application comprises the following steps: and (5) preparing the polished crystal in the step S5 into an array, and coupling the array with a photomultiplier through silicone oil to prepare the radiation detector.
4. The LYSO scintillator of claim 1, wherein the radiation detector for detecting high-energy radiation using the LYSO scintillator comprises:
the LYSO scintillator is Lu2(1-x-y)Y2yCe2xSizO3+2zWherein x is 0.05-2%, y is 0.1-20%,
z=1.01-1.2;
high energy radiation includes X-rays, gamma-rays, and alpha-rays;
the activated LYSO scintillator receives radiation, thereby generating photons indicative of the radiation characteristic;
a photodetector optically coupled to the LYSO scintillator generates an electrical signal in response to emission of a light pulse generated by the LYSO scintillator.
5. The LYSO scintillator of claim 4, wherein the radiation detector is configured to detect high-energy radiation, comprising:
step S11: photon generation: receiving radiation from the activated LYSO scintillator to produce photons indicative of the radiation characteristic;
step S12: the crystal application comprises the following steps: detecting photons of step S11 with a photon detector coupled to the LYSO scintillator, which is Lu2(1-x-y)Y2yCe2xSizO3+2zWherein x is 0.05-2%, y is 0.1-20%, and z is 1.01-1.2.
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Cited By (2)
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CN112390278A (en) * | 2020-11-16 | 2021-02-23 | 中国科学院上海硅酸盐研究所 | Strong electron-withdrawing element doped rare earth orthosilicate scintillation material and preparation method and application thereof |
CN114806571A (en) * | 2021-01-18 | 2022-07-29 | 松山湖材料实验室 | Scintillator material and preparation method and application thereof |
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CN105543963A (en) * | 2016-03-01 | 2016-05-04 | 中国科学院长春应用化学研究所 | Rare earth scintillation crystal prepared from low-cost rare earth raw materials and low-cost growth process of rare earth scintillation crystal |
CN112513346A (en) * | 2019-08-21 | 2021-03-16 | 眉山博雅新材料有限公司 | Scintillation crystal growth method and equipment capable of shortening decay time |
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CN105543963A (en) * | 2016-03-01 | 2016-05-04 | 中国科学院长春应用化学研究所 | Rare earth scintillation crystal prepared from low-cost rare earth raw materials and low-cost growth process of rare earth scintillation crystal |
CN112513346A (en) * | 2019-08-21 | 2021-03-16 | 眉山博雅新材料有限公司 | Scintillation crystal growth method and equipment capable of shortening decay time |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112390278A (en) * | 2020-11-16 | 2021-02-23 | 中国科学院上海硅酸盐研究所 | Strong electron-withdrawing element doped rare earth orthosilicate scintillation material and preparation method and application thereof |
CN114806571A (en) * | 2021-01-18 | 2022-07-29 | 松山湖材料实验室 | Scintillator material and preparation method and application thereof |
CN114806571B (en) * | 2021-01-18 | 2023-08-29 | 松山湖材料实验室 | Scintillator material, and preparation method and application thereof |
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