CN110627709A - High-stability bismuth-iodine hybrid light absorber and preparation and application thereof - Google Patents
High-stability bismuth-iodine hybrid light absorber and preparation and application thereof Download PDFInfo
- Publication number
- CN110627709A CN110627709A CN201910957703.6A CN201910957703A CN110627709A CN 110627709 A CN110627709 A CN 110627709A CN 201910957703 A CN201910957703 A CN 201910957703A CN 110627709 A CN110627709 A CN 110627709A
- Authority
- CN
- China
- Prior art keywords
- bii
- me4ppi
- bismuth
- phenylpyridine
- light absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/06—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom containing only hydrogen and carbon atoms in addition to the ring nitrogen atom
- C07D213/16—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom containing only hydrogen and carbon atoms in addition to the ring nitrogen atom containing only one pyridine ring
- C07D213/20—Quaternary compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B2200/00—Indexing scheme relating to specific properties of organic compounds
- C07B2200/13—Crystalline forms, e.g. polymorphs
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Pyridine Compounds (AREA)
Abstract
The invention discloses a high-stability bismuth-iodine hybrid light absorber Me4ppi-BiI4The preparation method and the application thereof. The structural formula of the material is Me4ppi-BiI4Me4ppi in the formula represents methylated 4-phenylpyridine cation, BiI in the material4The anion is a one-dimensional anion chain formed by coordination of trivalent bismuth ions and iodide ions. Selecting bismuth trichloride, 4-phenylpyridine, methanol, acetonitrile and hydroiodic acid as reaction raw materials to synthesize and obtain a compound Me4ppi-BiI4The material can bear at least 35 days and 7 days under 75% relative humidity and sunlight respectively and maintain excellent photoelectric response capability, and powder diffraction proves that the compound maintains the phase purity under both conditions.
Description
Technical Field
The invention relates to the field of inorganic-organic hybrid materials, in particular to a high-stability bismuth-iodine hybrid light absorber Me4ppi-BiI4In which Me4ppi = methylation, and their use4-phenylpyridine of (1).
Background
Over the past few years, lead-based organometallic halide light absorbers such as CH3NH3PbX3Photovoltaic research of (X = Cl, I, Br) has become one of the hot topics of modern chemistry and material science. CH from Miyasaka and coworkers3NH3PbX3After being incorporated as a sensitizer in a dye-sensitized solar cell, a huge leap from 3.8% to 24% in energy conversion efficiency of the lead-based organic metal halide solar cell was achieved over ten years. This dramatic performance improvement should be attributed to the sum of its various physical properties, including strong optical absorption, moderate band gap, high defect tolerance, low exciton confinement energy, and high carrier mobility, among others. Nevertheless, environmental stability (e.g., humidity stability and light stability) and heavy metal toxicity under actual work have become great obstacles limiting the commercial promotion thereof, and therefore, it is imperative to explore a "take the essence, discard" non-lead material as a substitute.
Wherein, the same main group metal Ge is adopted2+And Sn2+Substitute for Pb2+Is the most straightforward method, however, no matter Ge2+Or is Sn2+They are more easily oxidized in air to the tetravalent state of Ge4+And Sn4+But rather makes the stability worse. Another solution is to introduce an isoelectric substance to replace Pb2+E.g. Sb3+And Bi3+. Due to their 6s26p0Electronic configuration and Pb2+Similarly, stronger light absorption and long carrier lifetime can therefore theoretically also be achieved. In comparison with Bi3+It seems to be a better choice, Bi is a non-toxic heavy metal only in the periodic Table of elements, is very friendly to the human body, some coordination complexes of bismuth have even been used in pharmaceuticals, and Bi is a neighboring ion in the periodic Table3+And Pb2+Have very similar ionic radii, which can lead to Bi3+More readily incorporated into the perovskite lattice. However, it cannot be shaped due to its higher oxidation state of +3Generic MAPbI3On the contrary, the common vertex connecting structure of (1) is more inclined to form two BiXs60-dimensional Bi of coplanar connection2X9Structure, despite the current Bi2X9The light absorbent achieves 2-3% of energy conversion efficiency in the solar cell, but due to the problem of low carrier transmission efficiency inherent in the zero-dimensional structure, Bi is limited2X9Further development of type light absorbers. On the other hand, most of the organic components of the existing Bi — X light absorbers are hydrophilic amine type cations or aromatic cations with strong hydrophilicity, which is very disadvantageous for their humidity stability.
Disclosure of Invention
The invention aims to solve the problems of low carrier transmission efficiency and poor stability of the existing zero-dimensional bismuth-halogen-based light absorber, and adopts low-cost BiI3And 4-phenylpyridine are used as raw materials, and hydrophobic alkyl cations are generated through an in-situ alkylation reaction, so that the bismuth-iodine hybrid light absorber which is one-dimensional chain and has excellent stability is synthesized.
The technical scheme of the invention comprises the following contents:
1. high-stability bismuth-iodine hybrid light absorber Me4ppi-BiI4Me4ppi in the formula represents a methylated 4-phenylpyridine cation. The compound is monoclinic system, and is crystallized in P21The/n space group, unit cell parameters a = 7.69 angstrom, b = 19.94.64 angstrom, c = 13.04 angstrom, α =90 degrees, β = 100.59 degrees, γ =90 degrees. The crystal color of the material is deep red and shows an ionic organic-inorganic hybrid structure. The specific structure is characterized in that cations in the structure are 4-phenylpyridine cations with a unit positive charge, the cations are formed by N atom methylation in 4-phenylpyridine, and anions are [ BiI ] formed by coordination of trivalent bismuth ions and iodide ions4]—A one-dimensional anionic chain, which is used to balance the positive charge of the 4-phenylpyridine cation, making the whole structure electrically neutral; BiI is adopted as bismuth ions in an anion chain6An octahedral coordination mode, wherein iodide ions are connected with adjacent bismuth ions in an end group coordination mode or a mu 2 bridging group coordination mode, and hydrogen bonds and coulomb interaction exist between cations and anions.
2. The method for preparing a bismuth-iodine hybrid light absorber according to item 1, characterized in that: weighing the mixture in a molar ratio of 0.5: 0.2: 1 BiCl3Adding HI, methanol and acetonitrile into 4-phenylpyridine and KCl, screwing, heating in an oven at 120 deg.C for three days, cooling to room temperature to obtain deep red crystalline product Me4ppi-BiI4。
3. Use of the bismuth-iodine hybrid light absorber of item 1, characterized in that: the material is used as a light absorber and has strong absorption in visible light and ultraviolet regions.
The invention has the advantages that the product has high stability, can bear 35 days and 7 days respectively at least under 75% relative humidity and solar illumination, and is superior to MA3Bi2I9And has excellent photoelectric conversion properties, and is useful as a light absorbing agent.
Drawings
FIG. 1 shows a bismuth-iodine hybrid light absorber Me4ppi-BiI4A block diagram of a single asymmetric unit. Symmetric codes are A2-x, 1-y, 1-z and B1-x, 1-y, 1-z..
FIG. 2 shows a bismuth-iodine hybrid light absorber Me4ppi-BiI4The scan voltage range of the I-V curve of (1) is-5 to 5 volts, and the scan rate is 50 millivolts/sec.
FIG. 3 shows a bismuth-iodine hybrid light absorber Me4ppi-BiI4The I-T curve tested under the constant bias voltage of 2 volts and the optical power density of 85 milliwatts per square centimeter can still maintain excellent photoresponse capability and cyclicity after the compound is placed for 35 days at the relative humidity of 75 percent and is irradiated by sunlight for seven days, thereby proving that the material has higher stability.
FIG. 4 shows a bismuth-iodine hybrid light absorber Me4ppi-BiI4The powder diffraction patterns under various environments are completely consistent with the simulated diffraction results of single crystals.
FIG. 5 shows a bismuth-iodine hybrid light absorber Me4ppi-BiI4The absorption spectrum of (2) shows that the compound has strong absorption in both ultraviolet and visible light regions.
Detailed Description
(1) Compound Me4ppi-BiI4Synthesis of (2)
0.158 g of BiCl30.075 g of KCl and 0.031 g of 4-phenylpyridine are put into a 25 ml of polytetrafluoroethylene inner container of an inner-sleeved glass small bottle, 0.5 ml of HI, 5 ml of methanol and 2 ml of acetonitrile are added, then the polytetrafluoroethylene inner container is put into a stainless steel reaction kettle, the stainless steel reaction kettle is heated in a 120 ℃ oven after being screwed, the temperature is kept constant for three days, then the mixture is cooled to the room temperature, and red columnar crystals are obtained after treatment, namely the compound Me4ppi-BiI4。
(2) Photoelectrochemical testing
5 mg of fully ground Me4ppi-BiI4Dispersing the powder in 0.3 ml of ethanol, ball-milling for thirty minutes, uniformly mixing, then dripping 3.5 microliters of the dispersion liquid on an interdigital electrode with the size of 1 multiplied by 1 square centimeter, repeating five times, drying in vacuum at 40 ℃ for four hours to obtain a thin film photoelectrode, and carrying out timing potential scanning and linear volt-ampere scanning on the photoelectrode under a light source with the optical power density of 85 milliwatt/square centimeter. The linear voltammetric scan voltage range is-5-5 volts, the scan rate is 50 millivolts/second, the timed potential scan potential is 2 volts, and the shutter time is set to 5 seconds.
Claims (3)
1. High-stability bismuth-iodine hybrid light absorber Me4ppi-BiI4In which Me4ppi is a methylated 4-phenylpyridine cation, which compound is monoclinic and crystallizes in P21The crystal has a structural characteristic that the crystal has a dark red color and a molecule containing 4-phenylpyridine cation with one unit positive charge and one dimension [ BiI ] in the molecule4]—The anion chain and the anions are formed by in-situ self-assembly, the cation is formed by 4 phenylpyridine in-situ N-methylation and carries a positive charge, and the anion is a one-dimensional anion chain formed by coordination of trivalent bismuth ions and iodide ions.
2. The bismuth-iodine hybrid light absorber Me4ppi-BiI as claimed in claim 14Is characterized in thatIn the following steps: weighing the mixture in a molar ratio of 0.5: 0.2: 1 BiCl3Adding HI, methanol and acetonitrile into 4-phenylpyridine and KCl, and keeping the temperature at 120 ℃ for three days to obtain a deep red crystalline product which is a compound Me4ppi-BiI4。
3. The bismuth-iodine hybrid light absorber Me4ppi-BiI as claimed in claim 14The use of (a), characterized in that: the material has strong environmental stability and high photoelectric response, and is used in the fields of photovoltaics and optical detection as a light absorbent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910957703.6A CN110627709B (en) | 2019-10-10 | 2019-10-10 | High-stability bismuth-iodine hybrid light absorber and preparation and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910957703.6A CN110627709B (en) | 2019-10-10 | 2019-10-10 | High-stability bismuth-iodine hybrid light absorber and preparation and application thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110627709A true CN110627709A (en) | 2019-12-31 |
CN110627709B CN110627709B (en) | 2022-09-20 |
Family
ID=68976137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910957703.6A Active CN110627709B (en) | 2019-10-10 | 2019-10-10 | High-stability bismuth-iodine hybrid light absorber and preparation and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110627709B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113501780A (en) * | 2021-04-09 | 2021-10-15 | 中国计量大学 | Bismuth-iodine hybrid semiconductor perovskite material based on butylpyridinium cations |
CN113979926A (en) * | 2021-08-17 | 2022-01-28 | 中国计量大学 | Charge transfer salt type perovskite semiconductor material based on bismuth iodide and pyridinium ions |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106008327A (en) * | 2016-05-05 | 2016-10-12 | 中国计量大学 | Organic and inorganic hybrid bismuth and iodine anionic cluster-based semiconductor material |
CN109755393A (en) * | 2019-01-16 | 2019-05-14 | 济南大学 | A kind of solwution method preparation and application of antimony iodine hydridization perovskite |
-
2019
- 2019-10-10 CN CN201910957703.6A patent/CN110627709B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106008327A (en) * | 2016-05-05 | 2016-10-12 | 中国计量大学 | Organic and inorganic hybrid bismuth and iodine anionic cluster-based semiconductor material |
CN109755393A (en) * | 2019-01-16 | 2019-05-14 | 济南大学 | A kind of solwution method preparation and application of antimony iodine hydridization perovskite |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113501780A (en) * | 2021-04-09 | 2021-10-15 | 中国计量大学 | Bismuth-iodine hybrid semiconductor perovskite material based on butylpyridinium cations |
CN113501780B (en) * | 2021-04-09 | 2023-06-13 | 中国计量大学 | Bismuth-iodine hybridized semiconductor perovskite-like material based on butylpyridinium cations |
CN113979926A (en) * | 2021-08-17 | 2022-01-28 | 中国计量大学 | Charge transfer salt type perovskite semiconductor material based on bismuth iodide and pyridinium ions |
Also Published As
Publication number | Publication date |
---|---|
CN110627709B (en) | 2022-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Chen et al. | Multinary metal chalcogenides with tetrahedral structures for second-order nonlinear optical, photocatalytic, and photovoltaic applications | |
CN109755393B (en) | Solution method preparation and application of antimony-iodine hybridized perovskite | |
CN110590816B (en) | One-dimensional copper-iodine-based hybrid semiconductor material and photoelectric application thereof | |
CN105218594B (en) | perovskite material and solar cell | |
CN110627709B (en) | High-stability bismuth-iodine hybrid light absorber and preparation and application thereof | |
CN110054638B (en) | Copper-iodine hybrid semiconductor material and photoelectric application thereof | |
CN113684027B (en) | Antimony-doped organic-inorganic tin-based perovskite luminescent material and preparation method and application thereof | |
CN111285797A (en) | Bismuth-based perovskite material and preparation method thereof | |
CN113571645A (en) | DJ type methylamine-free narrow band gap two-dimensional double-layer hybrid perovskite material and preparation method thereof | |
Li et al. | HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance | |
Faridi et al. | Synthesis and characterization of high-efficiency halide perovskite nanomaterials for light-absorbing applications | |
CN107829138A (en) | A kind of Emission in Cubic organic-inorganic perovskite monocrystal material based on mixed-cation, preparation method and applications | |
US20080060698A1 (en) | Electrolyte Composition And Photoelectric Conversion Element Utilizing The Same | |
Wu et al. | Remarkable stability and optoelectronic properties of an all-inorganic CsSn0. 5Ge0. 5I3 perovskite solar cell | |
Liu et al. | Bandgap engineering and thermodynamic stability of oxyhalide and chalcohalide antiperovskites | |
Singh et al. | Novel KFeO2 nanoparticles for dye-sensitized solar cell | |
CN110054628B (en) | Water-stable hybrid lead-iodine-perovskite material and application thereof | |
Liu et al. | Constructing moisture-stable hybrid lead iodine semiconductors based on hydrogen-bond-free and dual-iodine strategies | |
Jiang et al. | Experimental and theoretical evidences of p-type conductivity in nickel carbodiimide nanoparticles with a delafossite structure type | |
Nhalil et al. | Optoelectronic properties of candidate photovoltaic Cu2PbSiS4, Ag2PbGeS4 and KAg2SbS4 semiconductors | |
CN110590647B (en) | Water-stable antimony-iodine-based hybrid perovskite and synthesis and application thereof | |
Patrini et al. | FA0. 8MA0. 2Sn x Pb1–x I3 Hybrid Perovskite Solid Solution: Toward Environmentally Friendly, Stable, and Near-IR Absorbing Materials | |
CN109750357B (en) | Infrared nonlinear optical crystal Ba10Zn7M6Q26And preparation method and application thereof | |
CN105481010A (en) | High-yield quaternary chalcogenide semiconductor material and its preparation method and use | |
Babu et al. | Zn (II) Alloying Improves the Luminescence Efficiency of Hybrid Tetrahedral Mn (II) Halides ((DMAPH) 2MnX4; X= Cl, Br, and I) to Near-Unity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |