CN110600972B - Terahertz wave amplifier based on high electron mobility transistor - Google Patents

Terahertz wave amplifier based on high electron mobility transistor Download PDF

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CN110600972B
CN110600972B CN201910864804.9A CN201910864804A CN110600972B CN 110600972 B CN110600972 B CN 110600972B CN 201910864804 A CN201910864804 A CN 201910864804A CN 110600972 B CN110600972 B CN 110600972B
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electron
wave
terahertz
terahertz wave
electron mobility
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潘依林
张平
宫玉彬
王战亮
陈亚鸣
师凝洁
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid

Abstract

The invention discloses a terahertz wave amplifier based on high electron mobility transistors, which comprises an electron emitter, an electron collector and two high electron mobility transistors, wherein the electron emitter is used for emitting electron beams, the electron collector is used for collecting the electron beams emitted by the emitter, the two high electron mobility transistors are used for forming an electromagnetic wave radiation channel, the electron beams pass through the electromagnetic wave radiation channel, and the electrons transfer the carried energy to terahertz waves according to the wave injection interaction principle so as to realize amplification of terahertz wave signals. The invention is based on the high electron mobility transistor with the periodic metal gate structure, and realizes the compact room-temperature terahertz wave amplifier with simple structure and convenient processing.

Description

Terahertz wave amplifier based on high electron mobility transistor
Technical Field
The invention belongs to the technical field of terahertz wave amplifiers, and particularly relates to a terahertz wave amplifier based on a high electron mobility transistor.
Background
Terahertz waves have important application value, and the research on terahertz radiation sources becomes a hot spot for the research on terahertz scientific and technical at home and abroad. But the size sharing effect of the traditional vacuum electronic device is obvious in the process of developing to high frequency and high power. With the increase of frequency, the size requirement of the device is smaller and smaller, the processing difficulty is increased, even the device cannot be processed, and the power density is difficult to further increase. Therefore, the current research on the terahertz vacuum electronic device mainly focuses on the terahertz domain of the low frequency band, and a new mechanism and a new process are sought.
In contrast, the semiconductor processing technology is mature, the processing precision can reach the nanometer level, the integration level is high, and various limitations of vacuum devices can be broken through. Studies by Dyakonov and Shur et al indicate that a heterojunction interface of a III-V group semiconductor-based High Electron Mobility Transistor (HEMT) has a two-dimensional electron gas channel, a plasma wave can be excited at a terahertz frequency, and when the terahertz wave drifts along with the two-dimensional electron gas, the High electron mobility transistor structure biased by direct current leads to amplification and saturation of the terahertz plasma wave, but the power of the generated terahertz frequency band plasma wave is low.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a terahertz wave amplifier based on a high electron mobility transistor, which is based on the high electron mobility transistor with a periodic metal gate structure and has the advantages of simple structure, convenience in processing, compactness and room temperature.
In order to achieve the above object, the present invention provides a terahertz wave amplifier based on high electron mobility transistors, which includes an electron emitter for emitting an electron beam, an electron collector for collecting the electron beam, and two high electron mobility transistors for forming an electromagnetic wave radiation channel, wherein the electron emitter and the electron collector are located at opposite positions and located at two ends of the electromagnetic wave radiation channel, and a gate of each high electron mobility transistor is a periodic metal gate structure.
The invention relates to a terahertz wave amplifier based on high electron mobility transistors, which comprises an electron emitter, an electron collector and two high electron mobility transistors, wherein the electron emitter is used for emitting electron beams, the electron collector is used for collecting the electron beams emitted by the emitter, the two high electron mobility transistors are used for forming an electromagnetic wave radiation channel, the electron beams pass through the electromagnetic wave radiation channel, and the electrons transfer the carried energy to terahertz waves according to the wave injection interaction principle so as to amplify terahertz wave signals.
The invention has the following technical effects:
1) the advantage that the terahertz frequency band plasma wave naturally exists in the high-electron-mobility transistor is used as an input signal, and a terahertz frequency band signal is not required to be input, so that the input problem of a terahertz source is successfully solved;
2) according to the invention, the frequency of the wave can be regulated and controlled in a terahertz frequency band by regulating the grid source voltage, so that the frequency can be regulated and controlled;
3) the terahertz wave amplifier is simple in structure and convenient to process, is a compact type and room temperature type terahertz wave amplifier, and is wider in application scene.
Drawings
FIG. 1 is a cross-sectional view of the structure of an embodiment of a high electron mobility transistor-based terahertz wave amplifier of the present invention;
FIG. 2 is a schematic diagram of a periodic metal gate structure in the present embodiment;
FIG. 3 is a graph of plasma frequency versus gate-source voltage for this embodiment;
FIG. 4 is a graph of plasma wave velocity versus gate-source voltage for this example;
FIG. 5 is an intensity diagram of a terahertz plasma wave in the present embodiment;
fig. 6 is a graph of the relationship between the gain and the speed parameter of the terahertz wave amplifier according to the present embodiment.
Detailed Description
The following description of the embodiments of the present invention is provided in order to better understand the present invention for those skilled in the art with reference to the accompanying drawings. It is to be expressly noted that in the following description, a detailed description of known functions and designs will be omitted when it may obscure the subject matter of the present invention.
Examples
Fig. 1 is a cross-sectional view of the structure of an embodiment of the terahertz wave amplifier based on the high electron mobility transistor of the invention. As shown in fig. 1, the terahertz wave amplifier based on the high electron mobility transistor of the present invention includes an electron emitter 1 for emitting an electron beam, an electron collector 2 for collecting the electron beam, and two high electron mobility transistors 3 for forming an electromagnetic wave radiation channel, where the electron emitter 1 and the electron collector 2 are in opposite positions and located at two ends of the electromagnetic wave radiation channel, each high electron mobility transistor 3 is a substrate 31, an epitaxial layer 32, and a barrier layer 33 from outside to inside, the two ends of the barrier layer 33 are respectively provided with a source 34 and a drain 35, and the middle is provided with a periodic metal gate structure 36.
Since the packaging of the terahertz wave amplifier based on the high electron mobility transistor is not the key point of the present invention, the specific packaging manner and structure may be set according to actual needs, and will not be described herein again.
Fig. 2 is a schematic diagram of a periodic metal gate structure in the present embodiment. As shown in fig. 2, in the present embodiment, the periodic metal gate structure 36 is obtained by placing a plurality of metal rectangular gates with equal length in parallel, and two metal wires are respectively connected to two ends of the metal rectangular gates, so that the gates are at the same potential when a voltage is applied. The periodic metal gate structures of the two high electron mobility transistors can be placed in a right-to-right mode or in a staggered mode, and the periodic metal gate structures can be arranged as required in practical application.
In order to better explain the technical scheme of the invention, the working process and principle of the invention are briefly analyzed and explained as follows:
applying a DC voltage bias U between the gate and source of the HEMTgsApplying a DC bias I between the source and draindsAnd plasma wave oscillation at terahertz frequency is generated in a two-dimensional electron gas channel on a heterojunction interface of the high electron mobility transistor. And adjusting the voltage of the electron emitter to synchronize the drift velocity of electrons with the wave velocity of the terahertz plasma wave, and according to the wave injection interaction principle, the electrons transfer the carried energy to the terahertz wave so as to amplify the terahertz wave signal. In other words, in the invention, the periodic metal gate structure couples the terahertz plasma wave in the two-dimensional electron gas channel into the electromagnetic wave radiation channel formed by the two high electron mobility transistors, so as to obtain the output of the terahertz wave.
According to the instability theory of plasma waves in gated two-dimensional electron gas proposed by Dyakonov and Shur, the resonance frequency ω of the plasma waves is determined by the following formula:
Figure BDA0002200944230000031
wherein L is the length of the grid, n is a positive integer, and UgsIs the gate-source voltage, UthIs the threshold voltage, m*Is the electron effective mass, e is the electron charge; wave vector of plasma
Figure BDA0002200944230000032
Wave velocity of plasma wave
Figure BDA0002200944230000041
In this embodiment, the high electron mobility transistor is an AlGaN/GaN heterojunction, the gate length L is 100nm, and the electron effective mass m is 0.2m, so that the frequency and voltage U of the plasma wave can be calculatedgs-UthThe relationship (2) of (c). FIG. 3 is a graph of the plasma frequency versus the gate-source voltage in this example. As can be seen from fig. 3, the frequency of the plasma wave can be regulated and controlled within the terahertz frequency band by adjusting the gate source voltage and the gate length, so that the frequency can be adjusted. FIG. 4 is a graph of plasma wave velocity versus gate-source voltage for this example. As shown in fig. 3 and 4, the gate-source voltage U is adjustedgsOperating the device at a frequency f02.5THz, at which time the terahertz plasma wave velocity vp＝1×106m·s-1。
The plasma wave in the two-dimensional electron gas channel is coupled through the periodic metal grid, and the momentum matching (wave vector matching) is satisfied, namely the m-th wave vector k of the coupled electromagnetic wavemSatisfy the requirement of
Figure BDA0002200944230000042
Where k is the wave vector of the plasma wave, P is the metal gate period, and m is an integer. Wave vector k due to coupled electromagnetic wavesmMuch smaller than the plasma wave vector k, kmIs negligible with respect to k, so the relationship between metal gate period P and gate length L is expressed as
Figure BDA0002200944230000043
Wherein m' is a negative integer and n is a positive integer. Only the fundamental coupling is considered, i.e. n is 1 and m is-1, where the metal gate period is 4 times the gate length. Namely, in the periodic metal gate structure, the metal gate period P is 400nm, the total length a of the gate is 100 μm, and the total width W of the gate is 100 μm.
Fig. 5 is a graph of the intensity of the terahertz plasma wave in this embodiment. As shown in fig. 5, the power of the thz plasma wave increases linearly with the increase of the total gate width W, and in this embodiment, when W is 100 μm, the power of the thz plasma wave is about 9 μ W.
And adjusting the voltage of the electron emitter to synchronize the drift velocity of electrons with the wave velocity of the terahertz plasma wave, and according to the wave injection interaction principle, the electrons transfer the carried energy to the terahertz wave so as to amplify the terahertz wave signal. Fig. 6 is a graph of the relationship between the gain and the speed parameter of the terahertz wave amplifier according to the present embodiment. As shown in FIG. 6, the electron beam DC current density was 20. mu.A-. mu.m-2The abscissa represents the speed parameter (v)p-v0)/vpWherein v is0It is an electron drift velocity, and the ordinate represents a gain G, and a maximum 19.12dB gain is obtained under the electron beam velocity and phase velocity synchronization condition, that is, the power of the terahertz wave is amplified by 81.66 times, and in an ideal case where the total gate width W is 100 μm, an output of 735 μ W is obtained.
Therefore, the terahertz wave amplifier based on the high electron mobility transistor can realize the generation and amplification of terahertz waves.
Although illustrative embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all matters of the invention which utilize the inventive concepts are protected.

Claims (3)

1. Based on high electronThe terahertz wave amplifier of the mobility transistor comprises an electron emitter for emitting electron beams, an electron collector for collecting the electron beams and two high electron mobility transistors for forming an electromagnetic wave radiation channel, wherein the electron emitter and the electron receiver are positioned at opposite positions and positioned at two ends of the electromagnetic wave radiation channel; applying a DC voltage bias U between the gate and source of the HEMTgsApplying a DC bias I between the source and draindsGenerating plasma wave oscillation under terahertz frequency in a two-dimensional electron gas channel on a heterojunction interface of the high electron mobility transistor; and adjusting the voltage of the electron emitter to synchronize the drift velocity of electrons with the wave velocity of the terahertz plasma wave, and according to the wave injection interaction principle, the electrons transfer the carried energy to the terahertz wave so as to amplify the terahertz wave signal.
2. The terahertz wave amplifier according to claim 1, wherein the periodic metal gate structure is formed by placing a plurality of metal rectangular gates with equal lengths in parallel, and two metal wires are respectively connected to two ends of each metal rectangular gate, so that the gates are at the same potential when biased by a voltage.
3. The terahertz wave amplifier of claim 1, wherein the metal gate period in the periodic metal gate structure is 4 times the gate length.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103021770A (en) * 2011-09-22 2013-04-03 中国科学院电子学研究所 Internal-feedback-type terahertz traveling wave tube oscillator
CN103346406A (en) * 2013-05-20 2013-10-09 电子科技大学 High electron mobility transistor-based terahertz wave spatial external modulator
CN108471039A (en) * 2018-04-02 2018-08-31 电子科技大学 A kind of optical grating construction for generating millimeter wave and terahertz emission

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103021770A (en) * 2011-09-22 2013-04-03 中国科学院电子学研究所 Internal-feedback-type terahertz traveling wave tube oscillator
CN103346406A (en) * 2013-05-20 2013-10-09 电子科技大学 High electron mobility transistor-based terahertz wave spatial external modulator
CN108471039A (en) * 2018-04-02 2018-08-31 电子科技大学 A kind of optical grating construction for generating millimeter wave and terahertz emission

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"二维等离子体波与太赫兹波相互作用的调控机制";黄永丹;《中国科学院大学 博士学位论文》;20131231;15-16,49-52页 *

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