CN110581429A - A terahertz wave radiation source based on graphene material - Google Patents
A terahertz wave radiation source based on graphene material Download PDFInfo
- Publication number
- CN110581429A CN110581429A CN201810590917.XA CN201810590917A CN110581429A CN 110581429 A CN110581429 A CN 110581429A CN 201810590917 A CN201810590917 A CN 201810590917A CN 110581429 A CN110581429 A CN 110581429A
- Authority
- CN
- China
- Prior art keywords
- graphene
- terahertz wave
- layer
- terahertz
- radiation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 95
- 239000000463 material Substances 0.000 title claims abstract description 41
- 230000005855 radiation Effects 0.000 title claims abstract description 30
- 239000002131 composite material Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000003993 interaction Effects 0.000 claims abstract description 13
- 150000003623 transition metal compounds Chemical class 0.000 claims abstract description 8
- 230000007704 transition Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 33
- 230000005540 biological transmission Effects 0.000 claims description 24
- 239000002585 base Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 150000002736 metal compounds Chemical class 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 10
- 239000006258 conductive agent Substances 0.000 claims description 9
- 239000007822 coupling agent Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000004299 exfoliation Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 238000000498 ball milling Methods 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims description 2
- 239000004917 carbon fiber Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 2
- 238000007385 chemical modification Methods 0.000 claims description 2
- 150000001805 chlorine compounds Chemical class 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 238000001962 electrophoresis Methods 0.000 claims description 2
- 238000007765 extrusion coating Methods 0.000 claims description 2
- 230000006870 function Effects 0.000 claims description 2
- 238000007306 functionalization reaction Methods 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000007646 gravure printing Methods 0.000 claims description 2
- 238000007644 letterpress printing Methods 0.000 claims description 2
- 229910052752 metalloid Inorganic materials 0.000 claims description 2
- 150000002738 metalloids Chemical class 0.000 claims description 2
- 238000003801 milling Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- 229920003180 amino resin Polymers 0.000 claims 1
- 229910021387 carbon allotrope Inorganic materials 0.000 claims 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 229920001568 phenolic resin Polymers 0.000 claims 1
- 239000005011 phenolic resin Substances 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 238000007761 roller coating Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000002059 diagnostic imaging Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 230000019771 cognition Effects 0.000 abstract 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000011160 research Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000002452 interceptive effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000007123 defense Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 210000002381 plasma Anatomy 0.000 description 3
- 239000012620 biological material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- -1 plasmas Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000000809 air pollutant Substances 0.000 description 1
- 231100001243 air pollutant Toxicity 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
一种基于石墨烯材料的太赫兹波辐射源,本发明涉及到太赫兹发射源，属于太赫兹波技术领域。基本主体材料为石墨烯及其改性石墨烯材料，主要结构包括石墨烯及其改性石墨烯材料所构建的半导体基础层、过渡金属化合物所形成过渡传输交互层、石墨烯及其复合材料所组成石墨烯磁场发射层三部分主要组成。发明提出一种真正太赫兹波源，输出频率完全覆盖0.1～10THz太赫兹波范围，即使在直流电24V电压下即可发射出平均功率数毫瓦的太赫兹波。所发明的发射源具有结构简单、轻便、薄膜化程度高、工作范围广、高转换效率远远超过当前已有的太赫兹波辐射源、完全适应于规模生产和应用，在拓展光谱学、材料学、生物学、医学成像、环境科学、信息科学、天体物理学、等离子体物理学等领域的认知维度和深度具有深远的影响。
A terahertz wave radiation source based on a graphene material. The invention relates to a terahertz emission source and belongs to the technical field of terahertz waves. The basic main material is graphene and its modified graphene materials. The main structure includes the semiconductor base layer constructed by graphene and its modified graphene materials, the transition transport interaction layer formed by transition metal compounds, and the graphene and its composite materials. The graphene magnetic field emission layer is mainly composed of three parts. The invention proposes a real terahertz wave source, whose output frequency completely covers the range of 0.1-10THz terahertz waves, and can emit terahertz waves with an average power of several milliwatts even under a DC 24V voltage. The invented emission source has simple structure, light weight, high degree of thin film, wide working range, and high conversion efficiency, far exceeding the current existing terahertz wave radiation source, and is fully suitable for large-scale production and application. It has a profound impact on the dimension and depth of cognition in the fields of science, biology, medical imaging, environmental science, information science, astrophysics, plasma physics and so on.
Description
技术领域technical field
本发明属于一种太赫兹波技术领域，特别是涉及一种基于石墨烯及其石墨烯复合材料的新型太赫兹辐射源。The invention belongs to the field of terahertz wave technology, in particular to a novel terahertz radiation source based on graphene and its graphene composite material.
背景技术Background technique
太赫兹波（THz）又称为T射线（T-rays），是介于毫米波与红外线之间，频率在0.1THz～10THz（波长30μm～3mm）范围之间的一种电磁辐射，是目前电磁光谱研究中最具前沿性的领域技术，也是一段几乎未被开发的波段。近年来，随着科学技术的进步和研究深入，发现由于太赫兹波所在波谱的特殊位置，其波谱的发射、反射和透射等光学性质中包含有丰富的物理和化学信息，可以作为傅里叶变换红外光谱技术和X射线技术的互补工具，特别对于半导体、等离子体、生物材料等新型领域的发展更为重要，满足特种需求。Terahertz wave (THz), also known as T-ray (T-rays), is an electromagnetic radiation between millimeter wave and infrared, with a frequency in the range of 0.1THz to 10THz (wavelength 30μm to 3mm). The most cutting-edge field technology in electromagnetic spectrum research is also an almost undeveloped band. In recent years, with the advancement of science and technology and the deepening of research, it has been found that due to the special position of the spectrum of terahertz waves, the optical properties of its spectrum, such as emission, reflection and transmission, contain rich physical and chemical information, which can be used as Fourier It is a complementary tool to transform infrared spectroscopy and X-ray technology, especially for the development of new fields such as semiconductors, plasmas, and biological materials, and to meet special needs.
太赫兹波除了具备电磁波的性质外，还具有若干独特的性质。太赫兹波波段具有相干性、低能性、选择性、高穿透性等特点，这些特点赋予了在基础领域以及其他特种领域的巨大潜力。在医疗诊断和生物技术方面，由于很多生物大分子的振动频率和旋转能级处在太赫兹波能量波段内，就可以利用太赫兹波技术获得丰富的物理和化学特征信息指纹谱，而且可以得到真实的生物物质信息，这主要因为太赫兹波光子能量仅有X射线能量的百万分之一（1/106）不会导致生物体的电离伤害。基于其高选择性和低能性，奠定了太赫兹波在生物研究、生命科学以及医学方面有着不可替代的优势。。In addition to the properties of electromagnetic waves, terahertz waves also have several unique properties. The terahertz wave band has the characteristics of coherence, low energy, selectivity, and high penetration, which endow it with great potential in basic fields and other special fields. In terms of medical diagnosis and biotechnology, since the vibration frequency and rotational energy level of many biological macromolecules are in the energy band of terahertz waves, terahertz wave technology can be used to obtain rich physical and chemical characteristic information fingerprints, and can get Real biological material information, mainly because the terahertz wave photon energy is only one millionth (1/10 6 ) of the X-ray energy and will not cause ionization damage to living organisms. Based on its high selectivity and low energy, terahertz waves have irreplaceable advantages in biological research, life science and medicine. .
太赫兹的穿透能力很强,它不仅能探测到金属，人体携带的非金属、胶体、粉末、陶瓷、液体等危险物品都能被系统识别，而且作为一种安全的人体检查技术，可实现对走私毒品、枪支、炸药等违禁安全物品的检测，可很好应用到机场、高铁、边防等领域，对保障公共社会安全和维护国防安定起着重大意义。太赫兹具有的“穿墙术”能够探测到隐蔽在墙后的武器、伪装埋伏人员，显示沙尘或烟雾中的坦克、火炮等装备，探测地下的雷场塑胶炸弹、流体炸药和人体炸弹等特点，这将极大提升作战部队的战斗实力提升部队巷战作战能力。另外，太赫兹波具有通信传输量大，域频谱信噪比高，安全性高，比当前的超宽带技术快几倍甚至上千倍，这将决定着高精度保密通信、卫星间宽带通信、雷达等领域的发展水平，影响国防和军事实力。最近报道还指出太赫兹波在PM2.5等其他空气污染物的定性和定量分析上更具有时效性、非接触性以及准确性。正是因为其巨大的发展潜力和独特性，2004年太赫兹波被美国评为“改变未来世界的十大技术”之一，2005年被日本列为“国家支柱十大重点战略目标”之首并大力进行相应的研发。太赫兹波已经发展成为最为重要的新兴学科之一，其发展必将进一步牵制着国家科技综合实力和国民生活质量。另外，在天体物理学、等离子体物理学、光谱学、材料学、生物学、医学成像、环境科学、信息科学等领域也有着广阔的应用前景和学术价值。目前，国内对太赫兹波技术研究的正在逐步开展，相应的课题也越来越全面，但大部分仍处在初步起步阶段。Terahertz has a strong penetrating ability. It can not only detect metals, but also non-metals, colloids, powders, ceramics, liquids and other dangerous objects carried by the human body can be identified by the system, and as a safe human body inspection technology, it can realize The detection of smuggled drugs, guns, explosives and other prohibited security items can be well applied to airports, high-speed rail, border defense and other fields, which is of great significance to ensuring public social security and maintaining national defense stability. Terahertz's "wall penetration" can detect weapons hidden behind walls, camouflage ambush personnel, display tanks, artillery and other equipment in dust or smoke, and detect underground minefield plastic bombs, fluid explosives and human bombs, etc. This will greatly enhance the combat strength of the combat troops and enhance the street combat capabilities of the troops. In addition, terahertz waves have a large amount of communication transmission, high domain spectrum signal-to-noise ratio, high security, and are several times or even thousands of times faster than the current ultra-wideband technology. The level of development in areas such as radar affects national defense and military strength. Recent reports also pointed out that terahertz waves are more time-sensitive, non-contact and accurate in the qualitative and quantitative analysis of PM2.5 and other air pollutants. It is precisely because of its huge development potential and uniqueness that in 2004, terahertz wave was rated as one of the "Top Ten Technologies Changing the Future World" by the United States, and was listed as the first among "Ten Key Strategic Objectives of the National Pillar" by Japan in 2005. And vigorously carry out corresponding research and development. Terahertz wave has developed into one of the most important emerging disciplines, and its development will further restrict the comprehensive strength of national science and technology and the quality of life of citizens. In addition, it also has broad application prospects and academic value in the fields of astrophysics, plasma physics, spectroscopy, materials science, biology, medical imaging, environmental science, and information science. At present, the domestic research on terahertz wave technology is gradually being carried out, and the corresponding topics are becoming more and more comprehensive, but most of them are still in the initial stage.
当前，太赫兹波的研究技术主要包括在太赫兹波发生源及其检测元件的研究、太赫兹波波段的物理和化学表征、太赫兹波成像等。众所周知，太赫兹波技术中太赫兹波的产出、调节和测定是非常困难，其中最大壁垒是得到高通量、高稳定、高输出功率以及低成本的太赫兹波辐射。太赫兹波波段涉及电子学和光学特性，相应的产生源也可以从这两种方法中得到。电子学方法主要是将毫米波上变频至太赫兹波，例如：常见反向波振荡器( BWO), 它可以在亚太赫兹区域产生频率连续调谐的相干输出, 但当频率超过1THz时, 输出功率和工作效率急剧下降, 且使用寿命短。基于电子学方法还包括倍频器、耿氏振荡器(Gunn Oscillator)、布洛赫( Bloch) 振荡器、量子级联激光器（QCL）、自由电子激光器（FEL）等，他们具有体积小、结构紧凑等优点，但是受到工艺及一些核心器件本身的限制，往往只是得到频率小于1THz的太赫兹波。基于半导体技术的太赫兹激光器发展迅速、且被认为较有发展前途的太赫兹相干辐射源，但是目前也存在转换效率和输出功率都较低, 需在超低温、大电流、强磁场情况下才能运转。另外被誉为中远红外波段激光技术革命的量子级联激光器，通过能带设计, 即使使用温度招展到液氮温度下也仅仅输出毫瓦功率的太赫兹波，而且还受生长技术复杂、工作阈值电流密度大、辐射频率较低以及光学损耗严重等问题所制约。At present, the research technology of terahertz wave mainly includes the research of terahertz wave source and detection element, physical and chemical characterization of terahertz wave band, terahertz wave imaging, etc. As we all know, the production, regulation and measurement of terahertz waves in terahertz wave technology are very difficult, and the biggest barrier is to obtain high-throughput, high stability, high output power and low-cost terahertz wave radiation. The terahertz wave band involves electronic and optical properties, and the corresponding generation sources can also be obtained from these two methods. The electronic method is mainly to up-convert the millimeter wave to the terahertz wave, for example: the common reverse wave oscillator (BWO), which can generate a coherent output with continuous frequency tuning in the sub-terahertz region, but when the frequency exceeds 1THz, the output power And the work efficiency drops sharply, and the service life is short. Electronics-based methods also include frequency doublers, Gunn Oscillators, Bloch oscillators, quantum cascade lasers (QCL), free electron lasers (FEL), etc., they have small size, structure Compactness and other advantages, but limited by the technology and some core devices themselves, often only terahertz waves with a frequency less than 1THz can be obtained. Terahertz lasers based on semiconductor technology are developing rapidly and are considered promising terahertz coherent radiation sources. However, there are currently low conversion efficiency and output power, and they need to be operated at ultra-low temperatures, high currents, and strong magnetic fields. . In addition, quantum cascade lasers, known as the revolution in laser technology in the mid-to-far infrared band, through energy band design, can only output terahertz waves with milliwatt power even when the temperature is extended to liquid nitrogen temperature, and are also affected by the complexity of growth technology and the working threshold. However, it is constrained by problems such as high current density, low radiation frequency and serious optical loss.
在光子学方面，利用光子学方法将光子波下变频至太赫兹波，此方法产出的太赫兹波具有较好的方向性和相干性，频率范围能够覆盖整个太赫兹波段。最早研究者利用高压汞灯，在0～2THz范围内的输出功率可达70μW。目前，利用光学方法主要有太赫兹波气体激光器、超短激光脉冲、能产生宽带亚皮秒太赫兹辐射的光整流、光电导和等离子体四波混频等，以及非线性光学差频。但是多数的存在能量转换效率不高，能量损失大，系统级元件很大，复杂而且价格昂贵等应用问题。In terms of photonics, the photonics method is used to down-convert photon waves to terahertz waves. The terahertz waves produced by this method have better directionality and coherence, and the frequency range can cover the entire terahertz wave band. The earliest researchers used high-pressure mercury lamps, and the output power in the range of 0-2THz can reach 70μW. At present, optical methods mainly include terahertz wave gas lasers, ultrashort laser pulses, optical rectification capable of generating broadband sub-picosecond terahertz radiation, photoconductive and plasma four-wave mixing, and nonlinear optical difference frequency. However, most of them have application problems such as low energy conversion efficiency, large energy loss, large system-level components, complexity, and high price.
发明内容Contents of the invention
基于以上了解发现，不管是基于电子方法还是光学方法所得到的太赫兹波源，都存在着固有的短肋。本发明针对以上已有太赫兹源存在的问题，首次提出一种全新的太赫兹波源，直接利用石墨烯或石墨烯复合材料作为输出频率范围0.1～10THz太赫兹波源的材料和主要部件，解决现有技术中太赫兹波组成部件复杂、制作成本高、制备精度高、转换效率低以及可调性差等技术问题和应用瓶颈。Based on the above understanding, it is found that there are inherent short ribs in terahertz wave sources, whether based on electronic methods or optical methods. Aiming at the problems existing in the existing terahertz sources above, the present invention proposes a brand-new terahertz wave source for the first time, directly using graphene or graphene composite material as the material and main components of the terahertz wave source with an output frequency range of 0.1-10THz, solving the existing problems There are technical problems and application bottlenecks such as complex components of terahertz waves, high manufacturing costs, high manufacturing precision, low conversion efficiency, and poor adjustability.
本发明所提供的一种基于石墨烯材料的太赫兹波辐射源，由石墨烯或/和石墨烯复合材料作为主体的辐射元件组成，在通电情况下可辐射出频率在0.1～10THz范围的太赫兹波，包括：石墨烯或/和石墨烯复合材料制备的基础半导体层，用于电制激发μm～mm波长的发射波，提供太赫兹波基源，其中基础半导体层形成在基材上，所述基材具有一表面；金属化合物、粘结树脂、导电剂、分散偶联剂构成电磁波的过渡传输交互层，金属化合物为电磁波提供碰撞、增强、干涉交互以形成太赫兹波，粘结树脂用于电磁波的传输干涉，并且作为支撑体，导电剂用于导电性，分散偶联剂提供辅助分散稳定性；石墨烯或/和石墨烯复合材料所组成石墨烯磁场发射层，用于电制激发石墨烯表面等离子体，并形成一种兼顾调频和发射功能的石墨烯磁场，同时与基础半导体层具有等同效果提供相同或不同的太赫兹波基源电磁波。A terahertz wave radiation source based on graphene material provided by the present invention is composed of graphene or/and graphene composite material as the main radiation element, and can radiate terahertz waves with a frequency in the range of 0.1 to 10 THz when electrified. Hertzian waves, including: basic semiconductor layers made of graphene or/and graphene composite materials, used to electrically excite emitted waves with wavelengths from μm to mm, providing terahertz wave base sources, wherein the basic semiconductor layer is formed on the substrate, The base material has a surface; the metal compound, bonding resin, conductive agent, and dispersed coupling agent constitute a transitional transmission and interaction layer for electromagnetic waves, and the metal compound provides collision, enhancement, and interference interactions for electromagnetic waves to form terahertz waves, and the bonding resin It is used for the transmission interference of electromagnetic waves, and as a support, the conductive agent is used for conductivity, and the dispersed coupling agent provides auxiliary dispersion stability; the graphene magnetic field emission layer composed of graphene or/and graphene composite materials is used for electrical systems Excite graphene surface plasmons, and form a graphene magnetic field that takes into account both frequency modulation and emission functions, and at the same time has the same effect as the basic semiconductor layer to provide the same or different terahertz wave base source electromagnetic waves.
所述的石墨烯材料包括单层、多层、复合层以及掺和物，石墨烯复合材料包括经过物理和化学改性的石墨烯、石墨、炭黑、碳纳米管、碳纤维、其它碳同素异形体、其中的一种或者多种掺和石墨烯的复合材料。其石墨烯的制备方法，包括氧化还原法、Hummer法以及改性Hummer法、机械剥离、电剥离法、外延生长、气相沉积方法制备的单层或多层石墨烯材料，以及以上衍生方法得到的石墨烯材料。物理改性石墨烯方法包括机械球磨、砂磨、等离子体处理方法；化学改性包括但不限于元素掺杂、表面活性基团引入、表面改性化、胺基功能化，以及这种物理和化学方法相结合的制备方法。Described graphene material comprises single-layer, multi-layer, composite layer and admixture, and graphene composite material comprises physically and chemically modified graphene, graphite, carbon black, carbon nanotube, carbon fiber, other carbon homogeneous Irregular bodies, one or more composite materials blended with graphene. The preparation method of its graphene includes redox method, Hummer method and modified Hummer method, mechanical exfoliation, electric exfoliation method, epitaxial growth, vapor deposition method to prepare single-layer or multi-layer graphene materials, and the above derivative methods obtained Graphene material. Physical modification of graphene methods include mechanical ball milling, sand milling, plasma treatment methods; chemical modification includes but not limited to element doping, introduction of surface active groups, surface modification, amine functionalization, and such physical and A preparation method combining chemical methods.
其过渡传输交互层中金属化合物指的是金属元素的氧化物、氯化物、硫化物、碳酸盐一种或者多种复合，金属元素包括过渡金属、类金属、碱金属、碱土金属一种或者多种复合，作为优化的金属化合物为金属氧化物TiO2，所述粘结树脂包括酚醛树脂、环氧树脂、氨基树脂、聚氨酯、丙烯酸树脂、聚酯类、有机硅一种或者多种的热固性和热塑性树脂，作为优化的为环氧树脂，其传输交互层材料配比和基本参数如下：过渡金属化合物粉体，10 ～ 40wt%；粘结树脂，1 ～ 30 wt%；分散偶联剂，0.5 ～ 5 wt%；导电剂，0.5 ～ 25 wt%；传输层厚度 ≥0.5μm。其中作为石墨烯磁场发射层是由平面板状、曲面板状、凹型、圆锥状、圆柱状、销状、棒状或者多边形结构中一种或者多种复合所构建而成。The metal compound in the transition transport interaction layer refers to one or more composites of oxides, chlorides, sulfides, and carbonates of metal elements, and the metal elements include one or more of transition metals, metalloids, alkali metals, and alkaline earth metals. A variety of composites, as the optimized metal compound is metal oxide TiO2, the bonding resin includes one or more thermosetting and Thermoplastic resin, as the optimized epoxy resin, the material ratio and basic parameters of the transmission interaction layer are as follows: transition metal compound powder, 10 ~ 40wt%; bonding resin, 1 ~ 30wt%; dispersed coupling agent, 0.5 ~ 5 wt%; Conductive agent, 0.5 ~ 25 wt%; Transport layer thickness ≥ 0.5μm. Among them, the graphene magnetic field emission layer is composed of one or more composite structures of flat plate, curved plate, concave, conical, cylindrical, pin-shaped, rod-shaped or polygonal structures.
所述的石墨烯或/和石墨烯复合材料以丝网印刷、挤压涂布、对辊涂布、线棒涂布、凹板印刷、凸版印刷、电沉积、电泳或喷涂方式转移附载到基材上，所述基材是刚性基材或柔性基材。The graphene or/and graphene composite material is transferred and loaded onto the substrate by screen printing, extrusion coating, roll coating, wire bar coating, gravure printing, letterpress printing, electrodeposition, electrophoresis or spray coating. On the material, the substrate is a rigid substrate or a flexible substrate.
整体上，一种基于石墨烯材料的太赫兹波辐射源由基础半导体层（设定A）、过渡传输交互层(设定B)、石墨烯磁场发射层(设定C)组件组成，其排列方式可以为ABC、AB、AC一种或者之间的任意搭配以及重复排列而形成发射源，组成部件排列角度夹角范围0～180°，此组成部件可以按需并排、串排、堆积，得到所需维度和体积满足特定功率和特定频率范围的太赫兹波，所组成的辐射源整体最小尺度可扩展到20μm，最大不限。其工作条件最大优势温度可在室温下，低压12V即可，操作温度范围为10K～1573K，工作电压范围1～10000V，输出每平方厘米的平均功率几μW～几百万mW。On the whole, a terahertz wave radiation source based on graphene material is composed of basic semiconductor layer (setting A), transition transmission interaction layer (setting B), and graphene magnetic field emission layer (setting C) components, and its arrangement The method can be ABC, AB, AC or any combination and repeated arrangement to form the emission source. The angle range of the arrangement angle of the components is 0-180°. The required dimension and volume meet the terahertz wave of a specific power and a specific frequency range, and the overall minimum dimension of the composed radiation source can be extended to 20 μm, and the maximum is not limited. The biggest advantage of its working conditions is that the temperature can be at room temperature, the low voltage is 12V, the operating temperature range is 10K ~ 1573K, the working voltage range is 1 ~ 10000V, and the average output power per square centimeter is several μW ~ several million mW.
以下详细解释本发明与已有技术相比的突出技术效果：The outstanding technical effects of the present invention compared with prior art are explained in detail below:
（1）本发明首次提出一种全新的太赫兹波源，主体构件是由石墨烯及其石墨烯的复合材料所组成的结构单元、过渡金属化合物组成的过渡传输交互层。此发射源具有制作简单、组成简便、生长周期短、加工要求精度小等优点，完全可以规模应用到现有市场服务社会。(1) This invention proposes a brand-new terahertz wave source for the first time. The main component is a structural unit composed of graphene and its composite material, and a transition transmission interactive layer composed of transition metal compounds. This emission source has the advantages of simple manufacture, simple composition, short growth cycle, and small processing precision, and can be applied to the existing market to serve the society on a large scale.
（2）本发明所提供的辐射源完全包含整个太赫兹波频率范围，覆盖整个0.1～10THz区域，是真正意义上的太赫兹波，而常见的电子学方法得到仅仅1THz以下频率的太赫兹波。在某种程度上本发明提供的石墨烯及其石墨烯复合材料所组成的太赫兹波源既不属于电子光学方法范畴范围，也不属于光学发射源方法，是一种直接作用在红外区和微波区的波段的发射机制，所以可以保证较高的转化效率。采用此方法的转换效率可以达到10-4～10-2，比光学方法的转化效率提升1～2数量级。(2) The radiation source provided by the present invention completely covers the entire terahertz wave frequency range, covering the entire 0.1-10THz region, and is a true terahertz wave, while common electronic methods only obtain terahertz waves with frequencies below 1THz . To some extent, the terahertz wave source composed of graphene and its graphene composite material provided by the present invention neither belongs to the category of electron optics method nor to the method of optical emission source. The transmission mechanism of the band in the area, so it can ensure a high conversion efficiency. The conversion efficiency of the method can reach 10-4 to 10-2, which is 1 to 2 orders of magnitude higher than that of the optical method.
（3）本发明所提供的辐射源，可以拓展到直流电以及交流电，且工作电压低，即使在直流电小于24 V小可以产出数mW以上的太赫兹波，这是现有技术的太赫兹波辐射元件不能达到的水平，相比已有的太赫兹波源不需要特高电压下工作以及电流下工作。另外，相比量子级联激光器太赫兹波源需要液氮冷却工作，不需要特定冷却系统室温下即可以稳定产出太赫兹源，故能够期待在安全保障、生物、环境以及通信等利用太赫兹波的应用领域做长期规模化全时段的应用，并为之发展进步做出更大的贡献。(3) The radiation source provided by the present invention can be extended to direct current and alternating current, and the working voltage is low. Even if the direct current is less than 24 V, it can produce terahertz waves of several mW or more. This is the terahertz wave of the prior art. Compared with the existing terahertz wave source, the level that the radiation element cannot reach does not need to work under ultra-high voltage and current. In addition, compared with the quantum cascade laser terahertz wave source that needs liquid nitrogen cooling, it can stably produce a terahertz source at room temperature without a special cooling system, so it can be expected to use terahertz waves in security, biology, environment, and communication. Make long-term large-scale full-time applications in the application field, and make greater contributions to its development and progress.
（4）本发明所构筑的太赫兹波源组成结构简单、构件单一、灵活可调性大，可以适用超薄、紧凑、任意弧度和维度等苛刻要求。整体结构尺度可达毫米尺度，平均发射太赫兹波功率可达到mW级别，这是相比其他太赫兹波源无法达到的水平。另外，因为不需要额外的光源和特定光路，所以通过微观调节可以拓展到任意尺寸适应于特殊领域。(4) The terahertz wave source constructed by the present invention has a simple structure, a single component, and great flexibility and adjustability, and can be applied to stringent requirements such as ultra-thin, compact, and arbitrary arc and dimension. The overall structural scale can reach the millimeter scale, and the average emitted terahertz wave power can reach the mW level, which is a level that cannot be achieved by other terahertz wave sources. In addition, because there is no need for additional light sources and specific optical paths, it can be expanded to any size and adapted to special fields through microscopic adjustments.
（5）本发明优选的太赫兹波源可以提供一种超薄超轻的太赫兹波发射源，特别适用于便携式、户外、手持等特殊领域使用。因为所提供的太赫兹波源主体是由低密度的无机非金属材料、少量的过渡金属化合物以及有机高分子所制备，所以即使是在大尺寸大维度下也保持其轻便性。(5) The preferred terahertz wave source of the present invention can provide an ultra-thin and ultra-light terahertz wave emission source, which is especially suitable for use in special fields such as portable, outdoor, and hand-held. Because the main body of the provided terahertz wave source is made of low-density inorganic non-metallic materials, a small amount of transition metal compounds and organic polymers, it maintains its portability even in large dimensions and dimensions.
（6）本发明所构筑的太赫兹波源，可以实现在0.1～10THz频率范围内有序调节，调节便利，波长范围可调。主要是利用石墨烯及其石墨烯复合材料优异光电特性外，更重要的是利用石墨烯自身就是一种室温条件下高效高通量的调频器（通过调节石墨烯的费米能级来实现）。另外，本发明还提供一种通过调节层的施加电压、半导体基础层与石墨烯磁场之间的三维方位、传输交互层种类来实现调节太赫兹波。(6) The terahertz wave source constructed by the present invention can be adjusted in an orderly manner within the frequency range of 0.1-10 THz, the adjustment is convenient, and the wavelength range is adjustable. Mainly use the excellent photoelectric properties of graphene and its graphene composite materials, and more importantly, use graphene itself as a high-efficiency and high-throughput frequency modulator at room temperature (realized by adjusting the Fermi level of graphene) . In addition, the present invention also provides a method to adjust the terahertz wave by adjusting the applied voltage of the layer, the three-dimensional orientation between the semiconductor base layer and the graphene magnetic field, and the type of the transmission interaction layer.
附图说明Description of drawings
图1是为实施例1所示的结构示意图，太赫兹波源由三层宏观结构的元件，A层为半导体基础层，B为包含过渡金属化学物的传输交互层，C为石墨烯磁场发射层。Figure 1 is a schematic diagram of the structure shown in Example 1. The terahertz wave source consists of three-layer macroscopic components, layer A is the semiconductor base layer, B is the transmission interaction layer containing transition metal chemicals, and C is the graphene magnetic field emission layer .
图2是按照实施例1所制备的太赫兹波辐射源所发射频率在0.1～10THz范围下太赫兹波平均功率随时间参数的变化曲线，其中辐射源工作电压为直流电24V，面积为400×400mm，整体厚度为2mm。太赫兹波源由三层宏观结构的元件，其中A层为厚度为0.8mm的半导体基础层，B为0.4mm厚度的TiO2传输交互层,C为0.8mm厚度凹型结构的石墨烯磁场发射层。测试条件太赫兹波源前加直径22mm的硅片窗口，与太赫兹波检测器之间距离为120mm，折波器频率为61.6Hz。Fig. 2 is the change curve of the average power of the terahertz wave with the time parameter under the emission frequency of the terahertz wave radiation source prepared according to Example 1 in the range of 0.1-10 THz, wherein the working voltage of the radiation source is DC 24V, and the area is 400×400mm , the overall thickness is 2mm. The terahertz wave source consists of three-layer macroscopic structure elements, in which layer A is a semiconductor base layer with a thickness of 0.8mm, layer B is a TiO2 transmission interactive layer with a thickness of 0.4mm, and layer C is a graphene magnetic field emission layer with a thickness of 0.8mm. Test conditions A silicon wafer window with a diameter of 22mm is added in front of the terahertz wave source, the distance between the terahertz wave detector and the terahertz wave detector is 120mm, and the frequency of the foldback is 61.6Hz.
具体实施方式Detailed ways
下面结合具体实施例和附图对本发明内容作进一步详细说明，但本发明并不局限于以下这些实施例。The content of the present invention will be described in further detail below in conjunction with specific embodiments and drawings, but the present invention is not limited to the following embodiments.
实施例1Example 1
首先采用化学气相沉积方式构建石墨烯半导体基础层，然后经过化学掺氮调节石墨烯的费米能级来实现石墨烯半导体特征，然后转移到聚酯PET膜并形成一定结构的导电网络层。其石墨烯主要是单层石墨烯和少量多层石墨烯组成，组成半导体基础层A。First, chemical vapor deposition is used to construct the graphene semiconductor base layer, and then the Fermi energy level of graphene is adjusted by chemical nitrogen doping to realize the graphene semiconductor characteristics, and then transferred to polyester PET film to form a conductive network layer with a certain structure. Its graphene is mainly composed of single-layer graphene and a small amount of multi-layer graphene, forming the semiconductor base layer A.
传输交互层材料优选金属化合物为TiO2纳米氧化物层，粘结树脂为高密度的聚乙烯材料。其传输交互层材料配比和基本参数如下：过渡金属化合物粉体15 wt%，粘结树脂45wt%，分散偶联剂2 wt%，导电剂38 wt%，传输层厚度为0.4 mm,标记为B层。The material of the transmission alternating layer is preferably a TiO2 nano-oxide layer as the metal compound, and a high-density polyethylene material as the bonding resin. The material ratio and basic parameters of the transmission interactive layer are as follows: transition metal compound powder 15 wt%, binder resin 45 wt%, dispersed coupling agent 2 wt%, conductive agent 38 wt%, the thickness of the transmission layer is 0.4 mm, marked as Layer B.
太赫兹波源中石墨烯磁场发射层，其构成中材料的单层率为80%石墨烯进行表面有机硅改性处理后采用电泳石墨烯漆方法涂覆到凹型模板中构建多维石墨烯磁场C层。The graphene magnetic field emission layer in the terahertz wave source has a monolayer ratio of 80% of the material. Graphene is modified by surface organic silicon and then coated into the concave template by electrophoretic graphene paint to construct a multi-dimensional graphene magnetic field C layer. .
将制备的ABC层，其中A层与C层通过调整宏观为10°得到主要发射窗口，然后在A层与C层间接入24V直流电，工作温度在100℃下得到频率0.1～10THz太赫兹波的平均功率为1.059mW。测试报告证书编号：GFJGJL1008180234006，国防科技工业光学一级计量站(西安应用光学研究所光学校准测试实验室)。测试条件:太赫兹波源前加直径22mm的硅片窗口；太赫兹波源和太赫兹波发射器之间距离120mm；斩波器频率61.6Hz；太赫兹波辐射功率计，证书编号：GXjg2017-1690。校准所依据技术文件：JJF(军工)118-2016《太赫兹波辐射参数校准规范》The prepared ABC layer, in which the A layer and the C layer are adjusted to 10° to obtain the main emission window, and then 24V DC is connected between the A layer and the C layer, and the operating temperature is 100°C to obtain a frequency of 0.1 ~ 10THz terahertz wave The average power is 1.059mW. Test report certificate number: GFJGJL1008180234006, National Defense Science and Technology Industry Optical First Class Metrology Station (Xi'an Institute of Applied Optics Optical Calibration Test Laboratory). Test conditions: a silicon wafer window with a diameter of 22mm is added in front of the terahertz wave source; the distance between the terahertz wave source and the terahertz wave emitter is 120mm; the chopper frequency is 61.6Hz; the terahertz wave radiation power meter, certificate number: GXjg2017-1690. Calibration is based on technical documents: JJF (Military Industry) 118-2016 "Calibration Specifications for Terahertz Wave Radiation Parameters"
实施例2Example 2
采用电沉积的方法构架石墨烯半导体基础层，并在电沉积过程中通过加入三聚氰胺进行掺氮，直接转转移到环氧树脂板材中并经过处理形成结构的导电网络层。其电沉积液中的活性石墨烯单层率达到90%，其他为多层石墨烯，组成半导体基础层A。Electrodeposition is used to structure the graphene semiconductor base layer, and nitrogen doping is added by adding melamine during the electrodeposition process, which is directly transferred to the epoxy resin sheet and processed to form a conductive network layer of the structure. The active graphene monolayer rate in the electrodeposition solution reaches 90%, and the others are multi-layer graphene, forming the semiconductor base layer A.
传输交互层材料优选金属化合物为TiO2纳米氧化物层，粘结树脂为高密度的聚乙烯材料。其传输交互层材料配比和基本参数如下：过渡金属化合物粉体20 wt%，粘结树脂40wt%，分散偶联剂2 wt%，导电剂0.5 wt%，传输层厚度为0.4 mm,标记为B层。The material of the transmission alternating layer is preferably a TiO2 nano-oxide layer as the metal compound, and a high-density polyethylene material as the bonding resin. The material ratio and basic parameters of the transmission interactive layer are as follows: 20 wt% transition metal compound powder, 40 wt% binder resin, 2 wt% dispersed coupling agent, 0.5 wt% conductive agent, the thickness of the transmission layer is 0.4 mm, marked as Layer B.
太赫兹波源中石墨烯磁场发射层，其构成中材料的单层率为80%石墨烯进行表面有机硅改性处理后采用电泳石墨烯漆方法涂覆到凹型模板中构建多维石墨烯磁场C层。The graphene magnetic field emission layer in the terahertz wave source has a monolayer ratio of 80% of the material. Graphene is modified by surface organic silicon and then coated into the concave template by electrophoretic graphene paint to construct a multi-dimensional graphene magnetic field C layer. .
将制备的ABC层，其中A层与C层通过调整宏观为15°得到主要发射窗口，然后各层接入220V交流电，在室温得到频率0.1～10THz太赫兹波的平均功率为3.360 mW。The prepared ABC layer, in which the A layer and the C layer are adjusted to 15° to obtain the main emission window, and then each layer is connected to 220V AC, and the average power of the frequency 0.1-10THz terahertz wave at room temperature is 3.360 mW.
实施例3Example 3
采用丝网印刷的方式将石墨烯浆料印制到陶瓷基材中，通过电镀方式引入金属纳米元素对石墨烯修饰，然后经过处理形成结构的导电网络层。其石墨烯浆料中单层率达到99%，其他为多层石墨烯，组成半导体基础层A。The graphene slurry is printed into the ceramic substrate by screen printing, and the graphene is modified by introducing metal nano-elements by electroplating, and then processed to form a conductive network layer of the structure. The single-layer ratio in the graphene slurry reaches 99%, and the others are multi-layer graphene, which constitutes the semiconductor base layer A.
传输交互层材料优选金属化合物为CaCO3纳米氧化物层，粘结树脂为耐低温材料。其传输交互层材料配比和基本参数如下：过渡金属化合物粉体20 wt%，粘结树脂40 wt%，分散偶联剂2 wt%，导电剂0.5 wt%，传输层厚度为0.4 mm,标记为B层。The preferred metal compound for the transmission and interaction layer is a CaCO 3 nanometer oxide layer, and the bonding resin is a low-temperature-resistant material. The material ratio and basic parameters of the transmission interactive layer are as follows: 20 wt% transition metal compound powder, 40 wt% binder resin, 2 wt% dispersed coupling agent, 0.5 wt% conductive agent, the thickness of the transmission layer is 0.4 mm, marked For the B layer.
太赫兹波源中石墨烯磁场发射层，其构成中材料的单层率为80%石墨烯进行表面有机硅改性处理后采用喷涂的形式直接喷涂到聚酯聚酯材质中构建多维石墨烯磁场C层。The graphene magnetic field emission layer in the terahertz wave source has a monolayer ratio of 80% of the material. Graphene is modified by surface silicone and sprayed directly into the polyester polyester material to construct a multi-dimensional graphene magnetic field. Floor.
将制备的ABC层，其中A层与C层通过调整宏观为15°得到主要发射窗口，然后各层接入220V交流电，在工作温度-30℃得到频率0.1～10THz太赫兹波的平均功率为1.059 mW。The prepared ABC layer, in which A layer and C layer are adjusted to 15° to obtain the main emission window, and then each layer is connected to 220V AC, and the average power of the frequency 0.1-10THz terahertz wave is 1.059 at the working temperature -30°C mW.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810590917.XA CN110581429B (en) | 2018-06-09 | 2018-06-09 | Terahertz wave radiation source based on graphene material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810590917.XA CN110581429B (en) | 2018-06-09 | 2018-06-09 | Terahertz wave radiation source based on graphene material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110581429A true CN110581429A (en) | 2019-12-17 |
| CN110581429B CN110581429B (en) | 2023-03-31 |
Family
ID=68810291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810590917.XA Active CN110581429B (en) | 2018-06-09 | 2018-06-09 | Terahertz wave radiation source based on graphene material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110581429B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111154264A (en) * | 2020-01-06 | 2020-05-15 | 四川大学 | Stress-driven flexible terahertz dynamic control material and preparation method thereof |
| CN111404604A (en) * | 2020-03-06 | 2020-07-10 | 杭州高烯科技有限公司 | A mid-infrared communication device |
| CN113185829A (en) * | 2021-06-03 | 2021-07-30 | 苏州星起源新材料科技有限公司 | Broadband terahertz wave-absorbing material and preparation method thereof |
| CN114004833A (en) * | 2021-12-30 | 2022-02-01 | 首都师范大学 | Composite material terahertz imaging resolution enhancement method, device, equipment and medium |
| CN114421260A (en) * | 2021-12-08 | 2022-04-29 | 中国航天科工集团第二研究院 | Terahertz wave generation system and method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011104776A1 (en) * | 2010-02-24 | 2011-09-01 | パナソニック株式会社 | Terahertz wave emitting device |
| CN202433655U (en) * | 2011-12-28 | 2012-09-12 | 山东科技大学 | Terahertz wave amplifying device based on optical pumping base-free graphene |
| WO2012153666A1 (en) * | 2011-05-11 | 2012-11-15 | Canon Kabushiki Kaisha | Terahertz-wave generating apparatus and measuring unit equipped with the same |
| CN103337772A (en) * | 2013-07-03 | 2013-10-02 | 中国科学院上海微系统与信息技术研究所 | Terahertz wave generator based on graphene nanoribbon |
| CN104793427A (en) * | 2015-05-13 | 2015-07-22 | 南开大学 | Graphene photonic crystal terahertz amplifier |
| CN104916885A (en) * | 2015-04-24 | 2015-09-16 | 天津理工大学 | Device generating terahertz radiation based on excitation, by electronic beam, of graphene |
| WO2016086796A1 (en) * | 2014-12-02 | 2016-06-09 | 宁波中科建华新材料有限公司 | Graphene dispersant and application thereof |
| CN106200016A (en) * | 2016-07-25 | 2016-12-07 | 上海师范大学 | A kind of Terahertz Graphene microstructure Modulation device |
| CN106299979A (en) * | 2016-11-14 | 2017-01-04 | 郭玮 | A kind of THz wave generator based on Graphene |
| CN107144985A (en) * | 2017-06-21 | 2017-09-08 | 电子科技大学 | A kind of netted automatically controlled terahertz wave modulator of HEMT arrays being dislocatedly distributed |
-
2018
- 2018-06-09 CN CN201810590917.XA patent/CN110581429B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011104776A1 (en) * | 2010-02-24 | 2011-09-01 | パナソニック株式会社 | Terahertz wave emitting device |
| WO2012153666A1 (en) * | 2011-05-11 | 2012-11-15 | Canon Kabushiki Kaisha | Terahertz-wave generating apparatus and measuring unit equipped with the same |
| CN202433655U (en) * | 2011-12-28 | 2012-09-12 | 山东科技大学 | Terahertz wave amplifying device based on optical pumping base-free graphene |
| CN103337772A (en) * | 2013-07-03 | 2013-10-02 | 中国科学院上海微系统与信息技术研究所 | Terahertz wave generator based on graphene nanoribbon |
| WO2016086796A1 (en) * | 2014-12-02 | 2016-06-09 | 宁波中科建华新材料有限公司 | Graphene dispersant and application thereof |
| CN104916885A (en) * | 2015-04-24 | 2015-09-16 | 天津理工大学 | Device generating terahertz radiation based on excitation, by electronic beam, of graphene |
| CN104793427A (en) * | 2015-05-13 | 2015-07-22 | 南开大学 | Graphene photonic crystal terahertz amplifier |
| CN106200016A (en) * | 2016-07-25 | 2016-12-07 | 上海师范大学 | A kind of Terahertz Graphene microstructure Modulation device |
| CN106299979A (en) * | 2016-11-14 | 2017-01-04 | 郭玮 | A kind of THz wave generator based on Graphene |
| CN107144985A (en) * | 2017-06-21 | 2017-09-08 | 电子科技大学 | A kind of netted automatically controlled terahertz wave modulator of HEMT arrays being dislocatedly distributed |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111154264A (en) * | 2020-01-06 | 2020-05-15 | 四川大学 | Stress-driven flexible terahertz dynamic control material and preparation method thereof |
| CN111154264B (en) * | 2020-01-06 | 2021-03-19 | 四川大学 | Stress-driven flexible terahertz dynamic control material and preparation method thereof |
| CN111404604A (en) * | 2020-03-06 | 2020-07-10 | 杭州高烯科技有限公司 | A mid-infrared communication device |
| CN111404604B (en) * | 2020-03-06 | 2021-04-09 | 杭州高烯科技有限公司 | A mid-infrared communication device |
| CN113185829A (en) * | 2021-06-03 | 2021-07-30 | 苏州星起源新材料科技有限公司 | Broadband terahertz wave-absorbing material and preparation method thereof |
| CN113185829B (en) * | 2021-06-03 | 2022-04-19 | 南京星起源新材料科技有限公司 | Broadband terahertz wave-absorbing material and preparation method thereof |
| CN114421260A (en) * | 2021-12-08 | 2022-04-29 | 中国航天科工集团第二研究院 | Terahertz wave generation system and method |
| CN114421260B (en) * | 2021-12-08 | 2023-04-11 | 中国航天科工集团第二研究院 | Terahertz wave generation system and method |
| CN114004833A (en) * | 2021-12-30 | 2022-02-01 | 首都师范大学 | Composite material terahertz imaging resolution enhancement method, device, equipment and medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110581429B (en) | 2023-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110581429B (en) | Terahertz wave radiation source based on graphene material | |
| Bharadwaj et al. | Optical antennas | |
| Wang et al. | Optical, photonic and optoelectronic properties of graphene, h-BN and their hybrid materials | |
| Mikhailov | Theory of the nonlinear optical frequency mixing effect in graphene | |
| Tang et al. | Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots | |
| Vij et al. | Resonant enhancement of THz radiation through vertically aligned carbon nanotubes array by applying wiggler magnetic field | |
| Ramakrishnan et al. | Terahertz generation from graphite | |
| Koulouklidis et al. | Ultrafast terahertz self-induced absorption and phase modulation on a graphene-based thin film absorber | |
| Li et al. | Purcell-enhanced spontaneous emission from perovskite quantum dots coupled to plasmonic crystal | |
| Didi et al. | Study and design of the microstrip patch antenna operating at 120 GHz | |
| Gulyaev et al. | Generation of terahertz radiation in magnetic junctions based on nanowires | |
| Jain et al. | Effect of magnetic field on terahertz generation via laser interaction with a carbon nanotube array | |
| CN105406357B (en) | Phasmon photon source device and the method for generating surface phasmon photon | |
| Varshney et al. | Laser intensity profile based terahertz field enhancement from a mixture of nano-particles embedded in a gas | |
| Ilyakov et al. | Ultrafast tunable terahertz-to-visible light conversion through thermal radiation from graphene metamaterials | |
| Krishna et al. | Terahertz photoconductivity and photocarrier dynamics in few-layer hBN/WS2 van der Waals heterostructure laminates | |
| Tang et al. | Optical properties of plasmonic tunneling junctions | |
| Zhang et al. | Symmetry-tailored patterns and polarizations of single-photon emission | |
| Zhao et al. | Nanoparticle-Enhanced Plasma Discharge Using Nanosecond High-Voltage Pulses | |
| Tibben et al. | Extending the self-discharge time of Dicke quantum batteries using molecular triplets | |
| Liu et al. | High-efficiency infrared four-wave mixing signal in monolayer graphene | |
| Dong et al. | A tunable plasmonic nano-antenna based on metal–graphene double-nanorods | |
| Fedorov et al. | Charge-transfer plasmons of complex nanoparticle arrays connected by conductive molecular bridges | |
| Chu et al. | Plasmonic response of STM tips | |
| Wang et al. | Properties of terahertz wave generated by the metallic carbon nanotube antenna |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 256600 North Town Sub district Office, Bincheng District, Binzhou City, Shandong Province, Yellow River Fifth Road, Shengxiang Cultural and Creative Industrial Park A1F1 Patentee after: Binzhou Tengyuan Electronic Technology Co.,Ltd. Country or region after: China Address before: Guoji Neighborhood Committee, East Office, Bincheng District, Binzhou City, Shandong Province, 256600 Patentee before: Binzhou Tengyuan Electronic Technology Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |