CN110581270A - A kind of preparation method and application of hollow nano-silicon ball anode material - Google Patents
A kind of preparation method and application of hollow nano-silicon ball anode material Download PDFInfo
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- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000010405 anode material Substances 0.000 title abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 58
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims abstract description 25
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 22
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 22
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 21
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 21
- 238000001354 calcination Methods 0.000 claims abstract description 20
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims abstract description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 16
- XQSBLCWFZRTIEO-UHFFFAOYSA-N hexadecan-1-amine;hydrobromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[NH3+] XQSBLCWFZRTIEO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 14
- 239000012498 ultrapure water Substances 0.000 claims abstract description 14
- 229940045348 brown mixture Drugs 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000007773 negative electrode material Substances 0.000 claims abstract description 11
- 239000001103 potassium chloride Substances 0.000 claims abstract description 11
- 235000011164 potassium chloride Nutrition 0.000 claims abstract description 11
- 239000011780 sodium chloride Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 230000002378 acidificating effect Effects 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 21
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 15
- 239000011777 magnesium Substances 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- 238000006722 reduction reaction Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 12
- 238000011534 incubation Methods 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 10
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 9
- 229910001416 lithium ion Inorganic materials 0.000 claims description 9
- 239000012300 argon atmosphere Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- 238000003980 solgel method Methods 0.000 claims description 4
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 229960004756 ethanol Drugs 0.000 claims 1
- 238000000967 suction filtration Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052710 silicon Inorganic materials 0.000 abstract description 28
- 239000010703 silicon Substances 0.000 abstract description 28
- 230000001351 cycling effect Effects 0.000 abstract 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 239000002086 nanomaterial Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004005 microsphere Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006138 lithiation reaction Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
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- General Physics & Mathematics (AREA)
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- Materials Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
本发明涉及一种中空纳米硅球负极材料的制备方法及其应用,具体包括以下步骤:S1:将十六烷基溴化胺,十二烷基硫酸钠,氨水,无水乙醇,超纯水混合并加入正硅酸四乙酯进行溶胶凝胶反应,得到白色粉末。S2:白色粉末温育以后,经酸性无水乙醇清洗并干燥,煅烧后得到中空二氧化硅。S3:将中空二氧化硅与镁粉、氯化钠、氯化钾等充分研磨,混合,煅烧,得到棕色混合物。S4:将棕色混合物经过盐酸和氢氟酸的清洗并干燥后,得到中空纳米硅球。经测试,在1.0A/g的电流密度下,中空纳米硅球经过100次循环还具有1200mAh/g的容量,远高于普通硅(100次循环后仅剩下400mAh/g)。中空纳米硅球能够明显的改善硅负极材料的循环稳定性。
The invention relates to a preparation method and application of a hollow nano-silicon ball negative electrode material, which specifically includes the following steps: S1: adding cetylamine bromide, sodium dodecyl sulfate, ammonia water, anhydrous ethanol and ultrapure water Mix and add tetraethyl orthosilicate to perform a sol-gel reaction to obtain a white powder. S2: After the white powder was incubated, it was washed with acidic anhydrous ethanol and dried to obtain hollow silica after calcination. S3: fully grind the hollow silica with magnesium powder, sodium chloride, potassium chloride, etc., mix, and calcine to obtain a brown mixture. S4: After the brown mixture is washed with hydrochloric acid and hydrofluoric acid and dried, hollow nano-silicon spheres are obtained. After testing, at a current density of 1.0A/g, the hollow nano-silicon spheres still have a capacity of 1200mAh/g after 100 cycles, which is much higher than that of ordinary silicon (only 400mAh/g remains after 100 cycles). The hollow nano-silicon spheres can significantly improve the cycling stability of silicon anode materials.
Description
技术领域technical field
本发明属于锂离子电池负极材料技术领域,具体涉及一种中空纳米硅球的制备方法,以及其在制备锂离子电池负极材料中的应用。The invention belongs to the technical field of negative electrode materials for lithium ion batteries, and particularly relates to a preparation method of hollow nano-silicon spheres and its application in the preparation of negative electrode materials for lithium ion batteries.
背景技术Background technique
硅在地球上的储量非常高,并且在半导体和能源领域有着广泛的应用。硅的理论容量为4200mAh•g-1,远高于传统的石墨负极,有望成为新一代的锂离子电池的负极材料。但是硅的锂化过程存在较大的体积膨胀,引起SEI膜的不断地破裂生长,造成较低的首效和较差的循环性能。目前,提高硅负极材料性能的方法主要有两种,一种是对硅的表面进行包覆,一种是设计具有不同微观结构的硅。Silicon is abundant on Earth and has a wide range of applications in semiconductors and energy. The theoretical capacity of silicon is 4200mAh•g -1 , which is much higher than that of the traditional graphite anode. It is expected to become the anode material of a new generation of lithium-ion batteries. However, there is a large volume expansion in the lithiation process of silicon, which causes the continuous rupture and growth of the SEI film, resulting in a low first effect and poor cycle performance. At present, there are two main methods to improve the performance of silicon anode materials, one is to coat the surface of silicon, and the other is to design silicon with different microstructures.
中国专利申请201910072699.5公开了一种表面双层包覆硅负极材料结构,硅颗粒表面由内而外依次包覆氮化硅层和氧化硅层。既可利用内层的氮化硅层对硅材料储锂膨胀进行限制,又可通过外层氧化硅层中的Si-O键与粘结剂中碳氢氧结构结合形成化学键从而起到弹性钉扎作用,从而提高锂离子电池的循环稳定性。同时由于内层氮化硅层的存在,外层的氧化硅层的作用仅仅是与粘结剂结合形成钉扎效果,因此其厚度可较薄,不会在储锂过程中产生过多的不可逆氧化物,硅负极材料的首次库伦效率不会受到太大影响。因此,该氧化硅和氮化硅双层包覆硅负极材料结构可望同时具备高比容量、优异的循环稳定性以及高的首次库仑效率。Chinese patent application 201910072699.5 discloses a double-layered silicon anode material structure on the surface, and the surface of silicon particles is sequentially coated with a silicon nitride layer and a silicon oxide layer from the inside to the outside. The inner silicon nitride layer can be used to limit the lithium storage expansion of the silicon material, and the Si-O bond in the outer silicon oxide layer can be combined with the carbon-hydrogen-oxygen structure in the binder to form a chemical bond to play an elastic nail. Binding effect, thereby improving the cycle stability of lithium-ion batteries. At the same time, due to the existence of the inner silicon nitride layer, the function of the outer silicon oxide layer is only to combine with the binder to form a pinning effect, so its thickness can be thinner, and it will not produce too much irreversible during the lithium storage process. Oxides, the first coulombic efficiency of silicon anode materials will not be greatly affected. Therefore, the silicon oxide and silicon nitride double-layer-coated silicon anode material structure is expected to have high specific capacity, excellent cycle stability and high first Coulombic efficiency at the same time.
中国专利申请201810797037.X公开了一种硅基负极材料,包括若干硅纳米粒子以及粘结剂,各硅纳米粒子依靠粘结剂相互连接起来,粘结剂包括柠檬酸以及大分子链聚合物,柠檬酸包覆于硅纳米粒子表面,大分子链聚合物与硅纳米粒子表面的柠檬酸相连接。利用大分子链聚合物和CA的双粘结剂的协同作用,形成三维交联结构作为硅基负极材料的粘结剂,增强电极材料的结构稳定性。Chinese patent application 201810797037.X discloses a silicon-based negative electrode material, including several silicon nanoparticles and a binder, each silicon nanoparticle is connected to each other by the binder, and the binder includes citric acid and a macromolecular chain polymer, The citric acid is coated on the surface of the silicon nanoparticle, and the macromolecular chain polymer is connected with the citric acid on the surface of the silicon nanoparticle. Using the synergistic effect of the macromolecular chain polymer and the double binder of CA, a three-dimensional cross-linked structure is formed as the binder of the silicon-based negative electrode material, and the structural stability of the electrode material is enhanced.
中国专利申请201710856095.0公开了一种新型硅微纳米结构制备技术,将金属诱导硅氧化以及酸碱腐蚀相结合,提出了一种低成本、高效率的大面积周期性硅微纳米结构阵列的制备方法。其中,硅微纳米结构的图形不仅由光刻模板上的微纳米结构图形所决定,还由所使用的腐蚀剂的类型所决定。本制备方法流程简单,对设备的要求低,能够高效制备周期性硅微纳米结构阵列,如硅微纳米洞、正金字塔和倒金字塔等微观结构。本方法工艺简单,成本低,所制备的大面积硅微纳米结构阵列在太阳能电池及传感器等领域具有广泛的应用前景。Chinese patent application 201710856095.0 discloses a novel silicon micro-nano structure preparation technology, which combines metal-induced silicon oxidation and acid-base corrosion to propose a low-cost, high-efficiency large-area periodic silicon micro-nano structure array preparation method . The pattern of the silicon micro-nano structure is not only determined by the pattern of the micro-nano structure on the lithography template, but also determined by the type of etchant used. The preparation method has a simple process, low requirements on equipment, and can efficiently prepare periodic silicon micro-nano structure arrays, such as micro-structures such as silicon micro-nano holes, positive pyramids, and inverted pyramids. The method is simple in process and low in cost, and the prepared large-area silicon micro-nano structure array has wide application prospects in the fields of solar cells, sensors and the like.
现有技术中还没有通过溶胶凝胶法结合镁热还原的方法来制备中空结构的纳米硅球,从而有效提高硅负极材料循环性能的报道。There is no report in the prior art that nano-silicon spheres with a hollow structure are prepared by a sol-gel method combined with magnesium thermal reduction, thereby effectively improving the cycle performance of silicon anode materials.
发明内容SUMMARY OF THE INVENTION
为了解决现有技术中提出的问题,本发明提出了一种中空纳米硅球负极材料的制备方法及其应用,所制备得到的中空结构能够为硅的体积膨胀提供空间,同时缩短锂离子的传输路径,是一种有效提高硅负极材料循环性能的改进方式。In order to solve the problems raised in the prior art, the present invention proposes a preparation method and application of a hollow nano-silicon ball negative electrode material. The prepared hollow structure can provide space for the volume expansion of silicon and shorten the transmission of lithium ions at the same time. It is an improved way to effectively improve the cycle performance of silicon anode materials.
本发明采用如下技术方案:一种中空纳米硅球负极材料的制备方法,通过溶胶凝胶法制备中空二氧化硅,并对其进行镁热还原得到中空纳米硅球。The present invention adopts the following technical scheme: a preparation method of a hollow nano-silicon sphere negative electrode material, the hollow silicon dioxide is prepared by a sol-gel method, and is subjected to magnesium thermal reduction to obtain the hollow nano-silicon sphere.
在本发明的优选的实施方式中,所述的制备方法具体包括以下步骤:In a preferred embodiment of the present invention, the preparation method specifically comprises the following steps:
S1:将十六烷基溴化胺、十二烷基硫酸钠、氨水、无水乙醇和水混合并加入正硅酸四乙酯进行溶胶凝胶反应,得到白色粉末;S1: mix cetyl amine bromide, sodium lauryl sulfate, ammonia water, dehydrated alcohol and water and add tetraethyl orthosilicate to carry out sol-gel reaction to obtain white powder;
S2:将得到的白色粉末在水中温育以后,经酸性无水乙醇清洗并干燥,煅烧后得到中空二氧化硅;S2: after incubating the obtained white powder in water, washing and drying with acidic absolute ethanol, and calcining to obtain hollow silica;
S3:将中空二氧化硅与镁粉、氯化钠、氯化钾等充分研磨,混合,煅烧,得到棕色混合物;S3: fully grind the hollow silica with magnesium powder, sodium chloride, potassium chloride, etc., mix, and calcine to obtain a brown mixture;
S4:将棕色混合物经过盐酸和氢氟酸的清洗并干燥后,得到中空纳米硅球。S4: After the brown mixture is washed with hydrochloric acid and hydrofluoric acid and dried, hollow nano-silicon spheres are obtained.
优选地,S1的具体操作为:将十六烷基溴化铵与十二烷基硫酸钠溶解在超纯水与无水乙醇的混合溶液中,加入氨水,搅拌,向混合液中逐滴滴加正硅酸四乙酯,经过搅拌,抽滤后得到白色粉末。Preferably, the specific operation of S1 is: dissolving cetyl ammonium bromide and sodium dodecyl sulfate in a mixed solution of ultrapure water and absolute ethanol, adding ammonia water, stirring, and adding dropwise to the mixed solution Add tetraethyl orthosilicate, stir and filter to obtain white powder.
优选地,S1的具体操作中,反应温度为30-35℃。Preferably, in the specific operation of S1, the reaction temperature is 30-35°C.
优选地,S1的具体操作中,搅拌速率为500-800rpm。Preferably, in the specific operation of S1, the stirring rate is 500-800 rpm.
优选地,S1的具体操作中,反应时间为20-30h。Preferably, in the specific operation of S1, the reaction time is 20-30h.
优选地,S1的具体操作中,十六烷基溴化铵、十二烷基硫酸钠与水的质量体积(g/L)比为1.5-3.5:1.5-3.5:0.5-2。Preferably, in the specific operation of S1, the mass-volume (g/L) ratio of cetylammonium bromide, sodium dodecyl sulfate and water is 1.5-3.5:1.5-3.5:0.5-2.
优选地,S1的具体操作中,氨水、正硅酸四乙酯、无水乙醇、水的体积比为:0.5-1.5:0.5-1.2:25-40:35-60。Preferably, in the specific operation of S1, the volume ratio of ammonia water, tetraethyl orthosilicate, absolute ethanol, and water is: 0.5-1.5:0.5-1.2:25-40:35-60.
优选地,S1的具体操作中,氨水的浓度为28wt%。Preferably, in the specific operation of S1, the concentration of ammonia water is 28wt%.
优选地,S2的具体操作中,白色粉末在超纯水中温育。Preferably, in the specific operation of S2, the white powder is incubated in ultrapure water.
优选地,S2的具体操作中,温育温度为65-90℃。Preferably, in the specific operation of S2, the incubation temperature is 65-90°C.
优选地,S2的具体操作中,温育时间24h-72h。Preferably, in the specific operation of S2, the incubation time is 24h-72h.
优选地,S2的具体操作中,无水乙醇中清洗,并加入盐酸0.2-0.5ml。Preferably, in the specific operation of S2, cleaning is performed in absolute ethanol, and 0.2-0.5 ml of hydrochloric acid is added.
优选地,S2的具体操作中,清洗温度为60-70℃。Preferably, in the specific operation of S2, the cleaning temperature is 60-70°C.
优选地,S2的具体操作中,清洗时间6-12h。Preferably, in the specific operation of S2, the cleaning time is 6-12h.
优选地,S2的具体操作中,干燥温度80℃,干燥时间12h。Preferably, in the specific operation of S2, the drying temperature is 80°C and the drying time is 12h.
优选地,S2的具体操作中,在空气中煅烧。Preferably, in the specific operation of S2, calcination is carried out in air.
优选地,S2的具体操作中,煅烧温度450-600℃。Preferably, in the specific operation of S2, the calcination temperature is 450-600°C.
优选地,S2的具体操作中,煅烧时间4-8h。Preferably, in the specific operation of S2, the calcination time is 4-8h.
优选地,S3的具体操作中,中空二氧化硅、镁粉、氯化钠和氯化钾的质量比为1:0.8-1.5:5-10:5-10。Preferably, in the specific operation of S3, the mass ratio of hollow silica, magnesium powder, sodium chloride and potassium chloride is 1:0.8-1.5:5-10:5-10.
优选地,S3的具体操作中,研磨时间不做具体规定,混合均匀即可。Preferably, in the specific operation of S3, the grinding time is not specified, and the mixing is uniform.
优选地,S3的具体操作中,镁热还原反应是在氩气气氛下进行。Preferably, in the specific operation of S3, the magnesium thermal reduction reaction is carried out in an argon atmosphere.
优选地,S3的具体操作中,镁热还原反应温度为650℃-700℃。Preferably, in the specific operation of S3, the temperature of the magnesium thermal reduction reaction is 650°C-700°C.
优选地,S3的具体操作中,升温速率为1-10℃/min。Preferably, in the specific operation of S3, the heating rate is 1-10°C/min.
优选地,S3的具体操作中,保温时间为2.5-4h。Preferably, in the specific operation of S3, the holding time is 2.5-4h.
优选地,S4的具体操作中,盐酸浓度为1-3mol/L。Preferably, in the specific operation of S4, the concentration of hydrochloric acid is 1-3 mol/L.
优选地,S4的具体操作中,盐酸的清洗时间为5-12h。Preferably, in the specific operation of S4, the cleaning time of hydrochloric acid is 5-12h.
优选地,S4的具体操作中,氢氟酸的浓度为5-10wt%。Preferably, in the specific operation of S4, the concentration of hydrofluoric acid is 5-10 wt%.
优选地,S4的具体操作中,氢氟酸的清洗时间为1-3h。Preferably, in the specific operation of S4, the cleaning time of hydrofluoric acid is 1-3h.
优选地,S4的具体操作中,干燥方式为真空干燥。Preferably, in the specific operation of S4, the drying method is vacuum drying.
优选地,S4的具体操作中,干燥时间为12-24h。Preferably, in the specific operation of S4, the drying time is 12-24h.
本发明还保护所述的中空纳米硅球在锂离子电池负极材料中的应用。The invention also protects the application of the hollow nano-silicon spheres in the negative electrode material of lithium ion batteries.
与现有技术相比,本发明首次采用溶胶凝胶法结合镁热还原的方法来制备中空结构的纳米硅球,所制备的中空纳米硅球在硅材料锂化过程中体积的变化提供了空间,缩短了锂离子传输的路径,有效的改善了硅的循环稳定性,本发明的制备方法简单易行,可以扩大生产,也为可以作为锂离子电池负极材料的中空纳米硅球的制备提供了一个可行的制备途径。Compared with the prior art, the present invention adopts the sol-gel method combined with the method of magnesium thermal reduction to prepare nano-silicon spheres with hollow structure for the first time, and the prepared hollow nano-silicon spheres provide space for the volume change of the silicon material during the lithiation process. , shortens the path of lithium ion transmission, and effectively improves the cycle stability of silicon. The preparation method of the present invention is simple and easy to implement, can expand production, and also provides the preparation of hollow nano-silicon spheres that can be used as negative electrode materials for lithium ion batteries. a feasible preparation route.
附图说明Description of drawings
下面结合附图做进一步的说明:Further description is made below in conjunction with the accompanying drawings:
图1为实施例3的中空二氧化硅的TEM图片;Fig. 1 is the TEM picture of the hollow silica of embodiment 3;
图2为实施例3的中空纳米硅球的TEM图片;Fig. 2 is the TEM picture of the hollow nano-silicon sphere of embodiment 3;
图3为实施例3的中空纳米硅球充放电性能和循环性能的检测结果。FIG. 3 shows the test results of the charge-discharge performance and cycle performance of the hollow nano-silicon spheres of Example 3. FIG.
具体实施方式Detailed ways
下面结合实施例作进一步的说明。Further description will be given below in conjunction with the embodiments.
实施例1Example 1
S1:将十六烷基溴化胺,十二烷基硫酸钠,氨水,无水乙醇,超纯水混合并加入正硅酸四乙酯进行溶胶凝胶反应,得到白色粉末。S1: Cetylamine bromide, sodium lauryl sulfate, ammonia water, absolute ethanol, and ultrapure water are mixed, and tetraethyl orthosilicate is added to carry out a sol-gel reaction to obtain a white powder.
S2:白色粉末温育以后,经酸性无水乙醇清洗并干燥,煅烧后得到中空二氧化硅。S2: After the white powder was incubated, it was washed with acidic anhydrous ethanol and dried to obtain hollow silica after calcination.
S3:将中空二氧化硅与镁粉、氯化钠、氯化钾等充分研磨,混合,煅烧,得到棕色混合物。S3: fully grind the hollow silica with magnesium powder, sodium chloride, potassium chloride, etc., mix, and calcine to obtain a brown mixture.
S4:将棕色混合物经过盐酸和氢氟酸的清洗并干燥后,得到中空纳米硅球。S4: After the brown mixture is washed with hydrochloric acid and hydrofluoric acid and dried, hollow nano-silicon spheres are obtained.
其中,S1的具体操作为:将十六烷基溴化铵与十二烷基硫酸钠溶解在超纯水与无水乙醇的混合溶液中,加入氨水,搅拌。向混合液中逐滴滴加正硅酸四乙酯,经过搅拌,抽滤后得到白色粉末,得到的白色粉末经过温育,清洗,干燥,煅烧得到中空二氧化硅。Wherein, the specific operation of S1 is: dissolving cetyl ammonium bromide and sodium dodecyl sulfate in a mixed solution of ultrapure water and absolute ethanol, adding ammonia water, and stirring. Tetraethyl orthosilicate is added dropwise to the mixed solution, stirred and filtered to obtain a white powder. The obtained white powder is incubated, washed, dried and calcined to obtain hollow silica.
S1的具体操作中,反应温度为35℃。In the specific operation of S1, the reaction temperature was 35°C.
S1的具体操作中,搅拌速率为600rpm。In the specific operation of S1, the stirring rate was 600 rpm.
S1的具体操作中,反应时间为20h。In the specific operation of S1, the reaction time is 20h.
S1的具体操作中,十六烷基溴化铵、十二烷基硫酸钠与水的质量体积(g/L)比为3:3:1。In the specific operation of S1, the mass-volume (g/L) ratio of cetylammonium bromide, sodium dodecyl sulfate and water is 3:3:1.
S1的具体操作中,氨水、正硅酸四乙酯、无水乙醇、水的体积比为:1.5:1:30:50。In the specific operation of S1, the volume ratio of ammonia water, tetraethyl orthosilicate, absolute ethanol, and water is: 1.5:1:30:50.
S1的具体操作中,氨水的浓度为28wt%。In the specific operation of S1, the concentration of ammonia water is 28wt%.
S2的具体操作中,白色粉末在超纯水中温育。In the specific operation of S2, the white powder was incubated in ultrapure water.
S2的具体操作中,温育温度为80℃。In the specific operation of S2, the incubation temperature was 80°C.
S2的具体操作中,温育时间36h。In the specific operation of S2, the incubation time was 36h.
S2的具体操作中,无水乙醇中清洗,并加入盐酸0.3ml。In the specific operation of S2, wash in absolute ethanol, and add 0.3 ml of hydrochloric acid.
S2的具体操作中,清洗温度为60℃。In the specific operation of S2, the cleaning temperature was 60°C.
S2的具体操作中,清洗时间10h。In the specific operation of S2, the cleaning time is 10h.
S2的具体操作中,干燥温度80℃,干燥时间12h。In the specific operation of S2, the drying temperature is 80°C and the drying time is 12h.
S2的具体操作中,在空气中煅烧。In the specific operation of S2, calcination is carried out in air.
S2的具体操作中,煅烧温度550℃。In the specific operation of S2, the calcination temperature is 550°C.
S2的具体操作中,煅烧时间6h。In the specific operation of S2, the calcination time is 6h.
S2中得到中空二氧化硅的粒径为450nm。The particle size of the hollow silica obtained in S2 was 450 nm.
S3的具体操作中,中空二氧化硅、镁粉、氯化钠和氯化钾的质量比为1:1:5:5。In the specific operation of S3, the mass ratio of hollow silica, magnesium powder, sodium chloride and potassium chloride is 1:1:5:5.
S3的具体操作中,研磨时间不做具体规定,混合均匀即可。In the specific operation of S3, the grinding time is not specified, and the mixing can be uniform.
S3的具体操作中,镁热还原反应是在氩气气氛下进行。In the specific operation of S3, the magnesium thermal reduction reaction is carried out in an argon atmosphere.
S3的具体操作中,镁热还原反应温度为700℃。In the specific operation of S3, the temperature of the magnesium thermal reduction reaction is 700°C.
S3的具体操作中,升温速率为5℃/min。In the specific operation of S3, the heating rate was 5°C/min.
S3的具体操作中,保温时间为3h。In the specific operation of S3, the holding time is 3h.
S4的具体操作中,盐酸浓度为1.5mol/L。In the specific operation of S4, the concentration of hydrochloric acid was 1.5 mol/L.
S4的具体操作中,盐酸的清洗时间为10h。In the specific operation of S4, the cleaning time of hydrochloric acid is 10h.
S4的具体操作中,氢氟酸的浓度为5wt%。In the specific operation of S4, the concentration of hydrofluoric acid is 5wt%.
S4的具体操作中,氢氟酸的清洗时间为1h。In the specific operation of S4, the cleaning time of hydrofluoric acid is 1h.
S4的具体操作中,干燥方式为真空干燥。In the specific operation of S4, the drying method is vacuum drying.
S4的具体操作中,干燥时间为18h。In the specific operation of S4, the drying time was 18h.
S4中得到的中空硅微球粒径约为450nm。The particle size of the hollow silicon microspheres obtained in S4 is about 450 nm.
实施例2 Example 2
一种中空纳米硅球的制备方法,包括以下步骤A preparation method of hollow nano-silicon ball, comprising the following steps
S1:将十六烷基溴化胺,十二烷基硫酸钠,氨水,无水乙醇,超纯水混合并加入正硅酸四乙酯进行溶胶凝胶反应,得到白色粉末。S1: Cetylamine bromide, sodium lauryl sulfate, ammonia water, absolute ethanol, and ultrapure water are mixed, and tetraethyl orthosilicate is added to carry out a sol-gel reaction to obtain a white powder.
S2:白色粉末温育以后,经酸性无水乙醇清洗并干燥,煅烧后得到中空二氧化硅。S2: After the white powder was incubated, it was washed with acidic anhydrous ethanol and dried to obtain hollow silica after calcination.
S3:将中空二氧化硅与镁粉、氯化钠、氯化钾等充分研磨,混合,煅烧,得到棕色混合物。S3: fully grind the hollow silica with magnesium powder, sodium chloride, potassium chloride, etc., mix, and calcine to obtain a brown mixture.
S4:将棕色混合物经过盐酸和氢氟酸的清洗并干燥后,得到中空纳米硅球。S4: After the brown mixture is washed with hydrochloric acid and hydrofluoric acid and dried, hollow nano-silicon spheres are obtained.
其中,S1的具体操作为:将十六烷基溴化铵与十二烷基硫酸钠溶解在超纯水与无水乙醇的混合溶液中,加入氨水,搅拌。向混合液中逐滴滴加正硅酸四乙酯,经过搅拌,抽滤后得到白色粉末,得到的白色粉末经过温育,清洗,干燥,煅烧得到中空二氧化硅。Wherein, the specific operation of S1 is: dissolving cetyl ammonium bromide and sodium dodecyl sulfate in a mixed solution of ultrapure water and absolute ethanol, adding ammonia water, and stirring. Tetraethyl orthosilicate is added dropwise to the mixed solution, stirred and filtered to obtain a white powder. The obtained white powder is incubated, washed, dried and calcined to obtain hollow silica.
S1的具体操作中,反应温度为30℃。In the specific operation of S1, the reaction temperature was 30°C.
S1的具体操作中,搅拌速率为500rpm。In the specific operation of S1, the stirring rate was 500 rpm.
S1的具体操作中,反应时间为24h。In the specific operation of S1, the reaction time is 24h.
S1的具体操作中,十六烷基溴化铵、十二烷基硫酸钠与水的质量体积(g/L)比为2:2:1。In the specific operation of S1, the mass-volume (g/L) ratio of cetylammonium bromide, sodium dodecyl sulfate and water is 2:2:1.
S1的具体操作中,氨水、正硅酸四乙酯、无水乙醇、水的体积比为:0.5:0.5:25:35。In the specific operation of S1, the volume ratio of ammonia water, tetraethyl orthosilicate, absolute ethanol, and water is: 0.5:0.5:25:35.
S1的具体操作中,氨水的浓度为28wt%In the specific operation of S1, the concentration of ammonia water is 28wt%
S2的具体操作中,白色粉末在超纯水中温育。In the specific operation of S2, the white powder was incubated in ultrapure water.
S2的具体操作中,温育温度为90℃。In the specific operation of S2, the incubation temperature was 90°C.
S2的具体操作中,温育时间24h。In the specific operation of S2, the incubation time was 24h.
S2的具体操作中,无水乙醇中清洗,并加入盐酸0.2ml。In the specific operation of S2, wash in absolute ethanol, and add 0.2 ml of hydrochloric acid.
S2的具体操作中,清洗温度为60℃。In the specific operation of S2, the cleaning temperature was 60°C.
S2的具体操作中,清洗时间6h。In the specific operation of S2, the cleaning time is 6h.
S2的具体操作中,干燥温度80℃,干燥时间12h。In the specific operation of S2, the drying temperature is 80°C and the drying time is 12h.
S2的具体操作中,在空气中煅烧。In the specific operation of S2, calcination is carried out in air.
S2的具体操作中,煅烧温度500℃。In the specific operation of S2, the calcination temperature is 500°C.
S2的具体操作中,煅烧时间8h。In the specific operation of S2, the calcination time is 8h.
S2中得到中空二氧化硅的粒径为450nm。The particle size of the hollow silica obtained in S2 was 450 nm.
S3的具体操作中,中空二氧化硅、镁粉、氯化钠和氯化钾的质量比为1:0.8:5:5。In the specific operation of S3, the mass ratio of hollow silica, magnesium powder, sodium chloride and potassium chloride is 1:0.8:5:5.
S3的具体操作中,研磨时间不做具体规定,混合均匀即可。In the specific operation of S3, the grinding time is not specified, and the mixing can be uniform.
S3的具体操作中,镁热还原反应是在氩气气氛下进行。In the specific operation of S3, the magnesium thermal reduction reaction is carried out in an argon atmosphere.
S3的具体操作中,镁热还原反应温度为700℃。In the specific operation of S3, the temperature of the magnesium thermal reduction reaction is 700°C.
S3的具体操作中,升温速率为3℃/min。In the specific operation of S3, the heating rate was 3°C/min.
S3的具体操作中,保温时间为2.5h。In the specific operation of S3, the holding time is 2.5h.
S4的具体操作中,盐酸浓度为1mol/L。In the specific operation of S4, the concentration of hydrochloric acid is 1 mol/L.
S4的具体操作中,盐酸的清洗时间为12h。In the specific operation of S4, the cleaning time of hydrochloric acid is 12h.
S4的具体操作中,氢氟酸的浓度为5wt%。In the specific operation of S4, the concentration of hydrofluoric acid is 5wt%.
S4的具体操作中,氢氟酸的清洗时间为1h。In the specific operation of S4, the cleaning time of hydrofluoric acid is 1h.
S4的具体操作中,干燥方式为真空干燥。In the specific operation of S4, the drying method is vacuum drying.
S4的具体操作中,干燥时间为12h。In the specific operation of S4, the drying time is 12h.
S4中得到的中空硅微球粒径约为450nm。The particle size of the hollow silicon microspheres obtained in S4 is about 450 nm.
实施案例3 Implementation Case 3
一种中空纳米硅球的制备方法,包括以下步骤A preparation method of hollow nano-silicon ball, comprising the following steps
S1:将十六烷基溴化胺,十二烷基硫酸钠,氨水,无水乙醇,超纯水混合并加入正硅酸四乙酯进行溶胶凝胶反应,得到白色粉末。S1: Cetylamine bromide, sodium lauryl sulfate, ammonia water, absolute ethanol, and ultrapure water are mixed, and tetraethyl orthosilicate is added to carry out a sol-gel reaction to obtain a white powder.
S2:白色粉末温育以后,经酸性无水乙醇清洗并干燥,煅烧后得到中空二氧化硅。S2: After the white powder was incubated, it was washed with acidic anhydrous ethanol and dried to obtain hollow silica after calcination.
S3:将中空二氧化硅与镁粉、氯化钠、氯化钾等充分研磨,混合,煅烧,得到棕色混合物。S3: fully grind the hollow silica with magnesium powder, sodium chloride, potassium chloride, etc., mix, and calcine to obtain a brown mixture.
S4:将棕色混合物经过盐酸和氢氟酸的清洗并干燥后,得到中空纳米硅球。S4: After the brown mixture is washed with hydrochloric acid and hydrofluoric acid and dried, hollow nano-silicon spheres are obtained.
其中,S1的具体操作为:将十六烷基溴化铵与十二烷基硫酸钠溶解在超纯水与无水乙醇的混合溶液中,加入氨水,搅拌。向混合液中逐滴滴加正硅酸四乙酯,经过搅拌,抽滤后得到白色粉末,得到的白色粉末经过温育,清洗,干燥,煅烧得到中空二氧化硅。Wherein, the specific operation of S1 is: dissolving cetyl ammonium bromide and sodium dodecyl sulfate in a mixed solution of ultrapure water and absolute ethanol, adding ammonia water, and stirring. Tetraethyl orthosilicate is added dropwise to the mixed solution, stirred and filtered to obtain a white powder. The obtained white powder is incubated, washed, dried and calcined to obtain hollow silica.
S1的具体操作中,反应温度为35℃。In the specific operation of S1, the reaction temperature was 35°C.
S1的具体操作中,搅拌速率为800rpm。In the specific operation of S1, the stirring rate was 800 rpm.
S1的具体操作中,反应时间为20h。In the specific operation of S1, the reaction time is 20h.
S1的具体操作中,十六烷基溴化铵、十二烷基硫酸钠与水的质量体积(g/L)比为1.5:1.5:1。In the specific operation of S1, the mass-volume (g/L) ratio of cetylammonium bromide, sodium dodecyl sulfate and water is 1.5:1.5:1.
S1的具体操作中,氨水、正硅酸四乙酯、无水乙醇、水的体积比为:1:1:25:35。In the specific operation of S1, the volume ratio of ammonia water, tetraethyl orthosilicate, absolute ethanol, and water is: 1:1:25:35.
S1的具体操作中,氨水的浓度为28wt%。In the specific operation of S1, the concentration of ammonia water is 28wt%.
S2的具体操作中,白色粉末在超纯水中温育。In the specific operation of S2, the white powder was incubated in ultrapure water.
S2的具体操作中,温育温度为80℃。In the specific operation of S2, the incubation temperature was 80°C.
S2的具体操作中,温育时间48h。In the specific operation of S2, the incubation time was 48h.
S2的具体操作中,无水乙醇中清洗,并加入盐酸0.3ml。In the specific operation of S2, wash in absolute ethanol, and add 0.3 ml of hydrochloric acid.
S2的具体操作中,清洗温度为65℃。In the specific operation of S2, the cleaning temperature was 65°C.
S2的具体操作中,清洗时间12h。In the specific operation of S2, the cleaning time is 12h.
S2的具体操作中,干燥温度80℃,干燥时间12h。In the specific operation of S2, the drying temperature is 80°C and the drying time is 12h.
S2的具体操作中,在空气中煅烧。In the specific operation of S2, calcination is carried out in air.
S2的具体操作中,煅烧温度550℃。In the specific operation of S2, the calcination temperature is 550°C.
S2的具体操作中,煅烧时间6h。In the specific operation of S2, the calcination time is 6h.
S2中得到中空二氧化硅的粒径为450nm。The particle size of the hollow silica obtained in S2 was 450 nm.
S3的具体操作中,中空二氧化硅、镁粉、氯化钠和氯化钾的质量比为1:1:10:10。In the specific operation of S3, the mass ratio of hollow silica, magnesium powder, sodium chloride and potassium chloride is 1:1:10:10.
S3的具体操作中,研磨时间不做具体规定,混合均匀即可。In the specific operation of S3, the grinding time is not specified, and the mixing can be uniform.
S3的具体操作中,镁热还原反应是在氩气气氛下进行。In the specific operation of S3, the magnesium thermal reduction reaction is carried out in an argon atmosphere.
S3的具体操作中,镁热还原反应温度为700℃。In the specific operation of S3, the temperature of the magnesium thermal reduction reaction is 700°C.
S3的具体操作中,升温速率为5℃/min。In the specific operation of S3, the heating rate was 5°C/min.
S3的具体操作中,保温时间为3h。In the specific operation of S3, the holding time is 3h.
S4的具体操作中,盐酸浓度为2mol/L。In the specific operation of S4, the concentration of hydrochloric acid is 2 mol/L.
S4的具体操作中,盐酸的清洗时间为6h。In the specific operation of S4, the cleaning time of hydrochloric acid is 6h.
S4的具体操作中,氢氟酸的浓度为10wt%。In the specific operation of S4, the concentration of hydrofluoric acid is 10wt%.
S4的具体操作中,氢氟酸的清洗时间为0.5h。In the specific operation of S4, the cleaning time of hydrofluoric acid is 0.5h.
S4的具体操作中,干燥方式为真空干燥。In the specific operation of S4, the drying method is vacuum drying.
S4的具体操作中,干燥时间为12h。In the specific operation of S4, the drying time is 12h.
S4中得到的中空硅微球粒径约为500nm。The particle size of the hollow silicon microspheres obtained in S4 is about 500 nm.
图1为实施例3的中空二氧化硅的TEM图片,图2为实施例3的中空纳米硅球的TEM图片,图3为实施例3的中空纳米硅球与普通纳米硅的充放电性能和循环性能的检测结果,结果显示在1.0A/g的电流密度下,中空纳米硅球经过100次循环还具有1200mAh/g的容量,远高于普通硅(100次循环后仅剩下400mAh/g)。Fig. 1 is a TEM image of the hollow silica of Example 3, Fig. 2 is a TEM image of the hollow nano-silicon spheres of Example 3, Fig. 3 is the charge-discharge performance of the hollow nano-silicon spheres of The test results of the cycle performance show that at a current density of 1.0A/g, the hollow nano-silicon spheres still have a capacity of 1200mAh/g after 100 cycles, which is much higher than that of ordinary silicon (only 400mAh/g remains after 100 cycles. ).
以上所述均为本发明较佳的具体实施方式,但是本发明的保护范围不仅仅局限于此,根据本发明的构思加以改变或替换都应该涵盖在本发明的保护范围内。The above are all preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited to this, and changes or replacements according to the concept of the present invention should be covered within the protection scope of the present invention.
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