CN110581050B - Processing method and plasma processing apparatus - Google Patents
Processing method and plasma processing apparatus Download PDFInfo
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- CN110581050B CN110581050B CN201910475932.4A CN201910475932A CN110581050B CN 110581050 B CN110581050 B CN 110581050B CN 201910475932 A CN201910475932 A CN 201910475932A CN 110581050 B CN110581050 B CN 110581050B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Physics & Mathematics (AREA)
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
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- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a technique capable of improving control performance of selective processing. In one embodiment, there is provided a method of processing an object to be processed in a processing container, the method including: a first step of selectively forming a first film on a surface of an object to be processed disposed in a processing container by plasma vapor deposition; and a second step of forming a second film by atomic layer deposition in a region where the first film is not present. The second step forms a second film by repeatedly performing a process including: a third step of supplying a precursor gas into the processing container to form a precursor layer on the surface of the object to be processed; a fourth step of purging the inside of the process container after the third step; a fifth step of converting the precursor layer into the second film by exposing the precursor to the modifying plasma in the processing vessel after the fourth step; and a sixth step of purging the space in the process vessel after the fifth step. The processing method may be performed by a plasma processing apparatus.
Description
Technical Field
Embodiments of the present invention relate to a processing method and a plasma processing apparatus.
Background
As device dimensions shrink, atomic scale processing, such as atomic layer deposition (Atomic Layer Deposition: ALD), is becoming increasingly demanding. Patent document 1 discloses a technique of selectively forming a film on the bottom of a pattern using plasma-based modification and atomic layer deposition.
Prior art literature
Patent literature
Patent document 1: U.S. patent application publication No. II 017/0140983 specification
Disclosure of Invention
Technical problem to be solved by the invention
The present invention provides a technique capable of improving control performance of selective processing.
Technical scheme for solving technical problems
In one exemplary embodiment, a method of processing an object to be processed is provided. The processing method comprises the following steps: a first step of selectively forming a first film on a surface of an object to be processed placed in a processing container by plasma chemical vapor deposition; and a second step of forming a second film by atomic layer deposition in a region where the first film is not present.
In one exemplary embodiment, a method of processing an object to be processed is provided. The processing method comprises the following steps: a step of supplying the object to be processed into the processing container; a first step of selectively forming a first film on the surface of the object to be treated by plasma chemical vapor deposition; and a second step of forming a second film by atomic layer deposition on the surface of the object to be treated where the first film is not present. In the second step, a precursor gas is supplied into the processing container, a precursor layer is formed in a region of the object to be processed where the first film is not present, the processing container is purged, and the precursor layer is converted into the second film by exposing the precursor to a modifying plasma in the processing container, whereby the modifying plasma reduces the film thickness of the first film.
In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes: a processing container for storing an object to be processed; and a control unit that controls processing of the object to be processed in the processing container, the control unit including a flow execution unit that repeatedly executes a flow including: a first process of selectively forming a first film on a surface of an object to be processed disposed in a processing container by using plasma chemical vapor deposition; and a second process of forming a second film by atomic layer deposition in a region where the first film is not present in the surface.
Effects of the invention
As described above, the controllability of the selective process can be improved.
Drawings
Fig. 1 is a flowchart showing a processing method according to an embodiment.
Fig. 2 is a diagram showing an example of the configuration of a plasma processing apparatus that executes the method shown in the flowchart of fig. 1.
Fig. 3 (a) is a diagram showing a state of the object before the flow shown in fig. 1 is executed, fig. 3 (b) is a diagram showing a state of the object during the flow shown in fig. 1 is executed, and fig. 3 (c) is a diagram showing a state of the object after the flow shown in fig. 1 is executed.
Fig. 4 (a) is a diagram showing a state of the film before the flow shown in fig. 1 is executed, fig. 4 (b) is a diagram showing a state of the film during the flow shown in fig. 1 is executed, and fig. 4 (c) is a diagram showing a state of the film after the flow shown in fig. 1 is executed.
Fig. 5 shows a change in film thickness of the second film in the case of adopting the method shown in the flowchart of fig. 1.
Fig. 6 shows another case of changing the film thickness of the second film in the case of adopting the method shown in the flowchart of fig. 1.
Fig. 7 (a) is a diagram showing an example of a state of the first film formed by isotropic plasma, and fig. 7 (b) is a diagram showing an example of a state of the first film formed by anisotropic plasma.
Fig. 8 is a diagram for explaining a mode of film formation and removal in the case where the first film is formed by anisotropic plasma.
Fig. 9 is a diagram for explaining a mode of film formation and removal in the case where the first film is formed by anisotropic plasma.
Fig. 10 is a diagram for explaining a mode of film formation and removal in the case where the first film is formed by anisotropic plasma.
Fig. 11 is a diagram for explaining a mode of film formation and removal in the case where the first film is formed by anisotropic plasma.
Fig. 12 shows an example of the mode of the first film and the second film in the case where the second film is formed by unsaturated atomic deposition by the processing method shown in fig. 1.
Fig. 13 shows another example of the manner of forming the first film and the second film in the case of forming the second film by unsaturated atomic deposition by the processing method shown in fig. 1.
Fig. 14 is a flowchart showing an example of a processing method in the case of etching the second region after forming the second film.
Fig. 15 is a diagram for explaining an example of the processing method shown in fig. 14.
Fig. 16 is a diagram for explaining an example of the processing method shown in fig. 14.
Fig. 17 (a) is a diagram for explaining a relationship between the temperature of the object to be processed and the film formation amount, and fig. 17 (b) is a diagram showing a state in which the object to be processed is divided into a plurality of areas.
Description of the reference numerals
A plasma processing apparatus, a 12 processing container, a 12e exhaust port, a 12G carry-in/out port, a 14 support portion, a 18a first plate, a 18b second plate, a 22 DC power supply, a 23 switch, a 24 refrigerant, a 26a piping, a 26b piping, a 28 gas line, a 30 upper electrode, a 32 insulating shielding member, a 34 electrode plate, a 34a gas exhaust port, a 36 electrode support body, a 36a gas diffusion chamber, a 36b gas through hole, a 36c gas inlet port, a 38 gas supply pipe, a 40 gas source group, a 42 valve group, a 45 flow controller group, a 46 deposition shielding member, a 48 exhaust plate, a 50 exhaust device, a 52 exhaust pipe, 52a gas inlet, 54 gate valve, 62 first high frequency power supply, 64 second high frequency power supply, 66 matcher, 68 matcher, 70 power supply, 82 gas supply pipe, CP center, CS flow execution section, cnt control section, EP edge section, ESC electrostatic chuck, FR focus ring, G1 second gas, HP heater power supply, HT temperature adjustment section, R1 region, R2 region, R3 region, LE lower electrode, ly1 layer, ly2 layer, M1 first film, M2 second film, MT method, P1 plasma, PD stage, SF surface, SF1 surface, SF2 surface, SF3 surface, sp processing space, W wafer, ZN region.
Detailed Description
Various embodiments are described in detail below with reference to the drawings. In which like or corresponding parts are designated by like reference numerals throughout the several views.
Fig. 1 is a flowchart showing a method of processing an object to be processed (hereinafter, may be referred to as a wafer W) in one embodiment. The method MT is one embodiment of a processing method. The method MT is performed by a plasma processing apparatus.
Fig. 2 shows an example of a plasma processing apparatus according to an embodiment used in the method MT. Fig. 2 schematically shows a cross-sectional structure of a plasma processing apparatus 10 that can be used in various embodiments of the method MT. The plasma processing apparatus 10 includes a processing vessel 12 having parallel plate-type electrodes. The process container 12 accommodates wafers W. The processing vessel 12 has a substantially cylindrical shape, and forms a processing space Sp. The treatment vessel 12 is made of, for example, aluminum, and has its inner wall surface anodized. The process vessel 12 is grounded for safety.
A substantially cylindrical support portion 14 is provided at the bottom of the processing container 12. The support portion 14 is made of, for example, an insulating material. The support portion 14 extends in the vertical direction from the bottom of the process container 12. Further, a mounting table PD supported by the support portion 14 is provided.
The stage PD holds a wafer W on its upper surface. The stage PD has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of metal such as aluminum, and have a substantially disk shape. The second board 18b is disposed on the first board 18a and electrically connected to the first board 18 a.
An electrostatic chuck ESC is disposed on the second plate 18 b. The electrostatic chuck ESC has a structure in which an electrode serving as a conductive film is disposed between a pair of insulating layers or between a pair of insulating sheets. The dc power supply 22 is electrically connected to the electrodes of the electrostatic chuck ESC via a switch 23. The electrostatic chuck ESC attracts the wafer W by electrostatic force such as coulomb force generated by the dc voltage from the dc power supply 22.
A focus ring FR is disposed on the peripheral edge of the second plate 18b so as to surround the edge of the wafer W and the electrostatic chuck ESC. The focus ring FR is provided to improve etching uniformity. The focus ring FR is made of a material selected according to the material of the etching target film, and may be made of quartz, for example.
A refrigerant flow path 24 is provided in the second plate 18 b. The refrigerant flow path 24 is a part of the temperature adjustment mechanism. The refrigerant is supplied to the refrigerant flow path 24 through the pipe 26a from a cooling device (not shown) provided outside the process container 12. The refrigerant supplied to the refrigerant flow path 24 is returned to the cooling device through the pipe 26 b. In this way, the refrigerant is supplied to the refrigerant flow path 24 in a circulating manner. By controlling the temperature of the refrigerant, the temperature of the wafer W can be controlled.
The plasma processing apparatus 10 is provided with a gas supply line 28. The gas supply line 28 supplies a heat transfer gas, such as He gas, from a heat transfer gas supply mechanism between the upper surface of the electrostatic chuck ESC and the backside of the wafer W.
The plasma processing apparatus 10 is provided with a temperature adjusting section HT such as a heater. The temperature adjusting portion HT is buried in the second plate 18 b. The heater power supply HP is connected to the temperature adjusting unit HT. By supplying power from the heater power supply HP to the temperature adjusting section HT, the temperature of the electrostatic chuck ESC, and thus the temperature of the wafer W, can be adjusted. The temperature adjusting unit HT may be incorporated in the electrostatic chuck ESC.
Further, the plasma processing apparatus 10 includes an upper electrode 30. The upper electrode 30 is disposed above the stage PD so as to face the stage PD. The lower electrode LE and the upper electrode 30 are disposed substantially parallel to each other. A processing space Sp for performing plasma processing on the wafer W is formed between the upper electrode 30 and the lower electrode LE.
The upper electrode 30 is supported on the upper portion of the processing container 12 via an insulating shielding member 32. The upper electrode 30 may include an electrode plate 34 and an electrode support 36. The electrode plate 34 is provided with a plurality of gas exhaust holes 34a facing the processing space Sp. The electrode plate 34 in one embodiment comprises silicon.
The electrode support 36 supports the electrode plate 34 in a manner to removably attach the electrode plate 34. The electrode support 36 is made of a conductive material such as aluminum, for example. The electrode support 36 may have a cooling structure. A gas diffusion chamber 36a is provided inside the electrode support 36. A plurality of gas through-holes 36b communicating with the gas exhaust holes 34a extend from the gas diffusion chamber 36a to the processing space Sp. A gas inlet 36c for guiding the process gas to the gas diffusion chamber 36a is formed in the electrode support 36, and a gas supply pipe 38 is connected to the gas inlet 36 c.
The plasma processing apparatus 10 includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply for generating first high-frequency power for generating plasma, and generates high-frequency power having a frequency of 27 to 100 MHz (60 MHz in one example). The first high-frequency power supply 62 is connected to the upper electrode 30 via the matching unit 66. The matcher 66 is a circuit for matching the output impedance of the first high-frequency power supply 62 with the input impedance of the load side (lower electrode LE side). The first high-frequency power supply 62 may be connected to the lower electrode LE via the matching unit 66.
The second high-frequency power supply 64 is a power supply for generating second high-frequency power for introducing ions into the wafer W, and generates high-frequency bias power at a frequency in the range of 400[ kHz ] to 40.68[ MHz ] (in one example, a frequency of 13.56[ MHz ]). The second high-frequency power supply 64 is connected to the lower electrode LE via a matching unit 68. The matching unit 68 is a circuit for matching the output impedance of the second high-frequency power supply 64 with the input impedance of the load side (lower electrode LE side).
In addition, the plasma processing apparatus 10 may further include a power supply 70. The power supply 70 is connected to the upper electrode 30. The power supply 70 applies a voltage for introducing positive ions in the processing space Sp to the electrode plate 34 to the upper electrode 30. In one example, the power supply 70 generates a negative dc voltage. When such a voltage is applied from the power source 70 to the upper electrode 30, positive ions in the processing space Sp are introduced into the electrode plate 34. Secondary electrons and/or silicon are released from the electrode plate 34 by causing the introduced ions to collide with the electrode plate 34.
An exhaust plate 48 is provided between the support portion 14 and the side wall of the process container 12. The exhaust plate 48 can be formed by, for example, covering ceramic such as Y 2O3 on an aluminum material. An exhaust port 12e is provided below the exhaust plate 48. The exhaust port 12e is connected to an exhaust device 50 via an exhaust pipe 52, and depressurizes the processing space Sp. The processing container 12 has a loading/unloading port 12g for the wafer W provided in a side wall thereof, and the loading/unloading port 12g is opened and closed by a gate valve 54.
The gas source group 40 has a plurality of gas sources. The valve block 42 includes a plurality of valves. The flow controller group 45 includes a plurality of flow controllers such as mass flow controllers.
The plasma processing apparatus 10 may have a post-mixing structure in which a gas having high reactivity such as an aminosilane-based gas is supplied to the processing space Sp independently of a pipe for supplying another gas, and the supplied gas is mixed in the processing space Sp. The post-mix structure includes a gas supply tube 38 and a gas supply tube 82. The gas supply pipe 38 and the gas supply pipe 82 are connected to the gas source group 40 via the valve group 42 and the flow controller group 45. With the post-mixing structure of the plasma processing apparatus 10, the gas line connected to the gas supply pipe 38 and the gas line connected to the gas supply pipe 82 are independent of each other in the path from the gas source group 40 to the valve group 42. In this case, the gas flowing through the gas supply pipe 38 and the gas flowing through the gas supply pipe 82 are not mixed each before being supplied into the process container 12.
The electrode support 36 is provided with a gas inlet 36c. The gas inlet 36c is provided above the stage PD. The gas inlet 36c is connected to a first end of the gas supply pipe 38. A second end of the gas supply tube 38 is connected to a valve block 42. The gas is introduced into a gas diffusion chamber 36a formed in the electrode support 36 through a gas introduction port 36c.
A gas inlet 52a is provided in a side wall of the processing container 12. The gas inlet 52a is connected to a first end of the gas supply pipe 82. A second end of the gas supply tube 82 is connected to the valve block 42.
In the plasma processing apparatus 10, a deposition shield 46 is removably provided along the inner wall of the processing container 12. A deposit shield 46 is also provided at the outer periphery of the support portion 14. The deposition shield 46 is used to inhibit deposition from adhering to the process vessel 12. The aluminum is covered with ceramics such as Y 2O3.
The plasma processing apparatus 10 may further include a control unit Cnt. The control unit Cnt controls the process performed on the wafers W in the process container 12. The control unit Cnt is a computer including a processor, a storage unit, an input device, a display device, and the like, and controls each part of the plasma processing apparatus 10. The control unit Cnt is connected to the valve block 42, the flow controller group 45, the exhaust device 50, the first high-frequency power supply 62, the matching unit 66, the second high-frequency power supply 64, the matching unit 68, the power supply 70, the heater power supply HP, and the like. The control unit Cnt may be further connected to a flow rate of the refrigerant from the cooling device, a temperature of the refrigerant, and the like.
The control unit Cnt includes a flow execution unit CS. The flow execution unit CS operates by a program based on the inputted processing scheme, and transmits a control signal. The selection of the gas supplied from the gas source group 40 and the flow rate of the gas, the exhaust of the exhaust device 50, the supply of electric power from the first high-frequency power source 62 and the second high-frequency power source 64, and the application of voltage from the power source 70 can be controlled by the control signal from the control unit Cnt. The control unit Cnt can also control the power supply of the heater power supply HP, the flow rate of the refrigerant from the cooling device, the temperature of the refrigerant, and the like. In the method for processing the wafer W described in the present specification, each step of the method can be executed by operating each part of the plasma processing apparatus 10 under the control of the flow execution unit CS of the control unit Cnt. The flow execution unit CS executes the processing shown in the method MT of fig. 1 by operating the respective parts of the plasma processing apparatus 10.
The method MT will be described with reference to fig. 1. Next, an example in which the plasma processing apparatus 10 is used for implementing the method MT will be described. In the following description, reference is made to fig. 4, 5 and 6. Fig. 4 is a diagram showing the state of the object to be processed after each step of the method MT is executed. The method MT includes step ST1 (first step, first process), step ST5 (second step, second process), and step ST4. Fig. 4 and 5 correspond to the case where step ST1a (cleaning process) is not performed in step ST1, and fig. 6 corresponds to the case where step ST1a is performed in step ST 1.
The horizontal axis shown in fig. 5 and 6 indicates the time from the start of the method MT. The vertical axes shown in fig. 5 and 6 indicate the film thickness of the first film M1 and the film thickness of the second film M2. The line LP1 (solid line) shown in fig. 5 and 6 shows the change in the film thickness of the second film M2 formed on the surface SF 2. The line LP2 (broken line) shown in fig. 5 and 6 shows a change in the film thickness of the first film M1 formed on the surface SF 2. The first film M1 formed on the surface SF2 includes: a first film M1 formed on the surface SF2 by performing the first (initial) step ST 1; and a first film M1 formed on the surface of the second film M2 on the surface SF2 by performing each step ST1 after the second time.
The line LP3 (broken line) shown in fig. 5 and 6 shows a change in the film thickness of the first film M1 formed on the surface SF 1.
The thickness TH1a shown in each of fig. 4, 5, and 6 is the maximum value of the thickness of the first film M1 formed on the surface SF1 by performing the step ST1 for the first time. The thickness TH1b shown in each of fig. 4, 5, and 6 is the maximum value of the thickness of the first film M1 formed on the surface SF2 by performing the step ST1 for the first time.
The thickness TH2 shown in each of fig. 4, 5, and 6 is the thickness of the first film M1 on the surface SF1 at the time (time TMb in the case of fig. 4 and 5, time TMa2 in the case of fig. 6) at which the line LP1 starts to rise. The thickness TH3 shown in each of fig. 4, 5, and 6 is the thickness of the first film M1 on the surface SF1 at the time when step ST5 ends (at the time when step ST1 is restarted).
First, a wafer W having a surface SF is prepared. The wafer W is placed on the placement table PD in the process container 12 of the plasma processing apparatus 10.
The wafer W has a surface SF. As shown in fig. 4 (a) to 4 (c), the surface SF includes a surface SF1 of a first region (region R1) and a surface SF2 of a second region (region R2). The region R1 is included in a region other than the region R2 in the wafer W. The region R1 and the region R2 may be formed of the same material. As an example, the region R1 and the region R2 are formed using the same material containing silicon.
In another example, each of the regions R1 and R2 may be formed of different materials. In this case, the region R1 may be a photoresist, a metal-containing mask, a hard mask, or the like. These regions R1 may be composed of any one of silicon, organic matter, and metal. Specific examples of the material of the region R1 may be any of Si, siC, an organic film, a metal (W, ti, WC, etc.), siON, siOC.
On the other hand, the region R2 may be an etched film etched through the region R1 formed by patterning. Specific examples of the region R2 may be any one of SiO 2 and SiON, siOC, siN.
In the method MT, step ST1 is first performed. Time TMa1 shown in fig. 4, 5, and 6 indicates a time when step ST1 is started when method MT is started, and indicates a time when step ST5 ends (a time when step ST1 is restarted) during execution of method MT.
In step ST1, after the step of supplying the wafer W into the process container 12 is performed, the first film M1 is selectively formed on the surface SF of the wafer W disposed in the process container 12 by plasma chemical vapor deposition (plasma CVD). Specifically, a film forming gas and an inert gas are supplied into the processing container 12, and a high-frequency power is supplied to generate plasma from the supplied gases. The first film M1 is formed on the surface SF1 of the region R1 of the wafer W by using the generated plasma. Further, a first film M1 is formed on the surface SF2 of the region R2 of the wafer W ((a) of fig. 4). The first film M1 formed in the region R1 is thicker than the first film M1 formed in the region R2.
In step ST1, a carbon-containing gas may be used. For example, when fluorocarbon gas is used, a fluorocarbon film is formed as the first film M1. In addition, for example, when a fluorinated hydrocarbon gas is used, a fluorinated hydrocarbon film is formed as the first film M1. Further, for example, when hydrocarbon gas is used, hydrocarbon gas is formed as the first film M1. The first membrane M1 is hydrophobic. Therefore, the precursor layer is not formed on the first film M1, and the second film M2 is not formed in the subsequent step ST 5.
Step ST1 may include a cleaning process (step ST1 a) of removing the first film M1 on the surface SF2 (fig. 6). In this way, after the first film M1 is formed on the surface of the wafer W in step ST1, the first film M1 on the surface of the wafer W can be removed. In step ST1a, a plasma of an oxygen-containing gas such as CO 2 gas may be used.
Next, step ST5 is performed. Time TMa2 shown in fig. 4, 5, and 6 shows the time when step ST5 starts after step ST1 (the time when step ST1 ends).
Step ST5 includes a process SQ1 and a step ST3. Step ST5 forms the second film M2 by atomic layer deposition in a region where the first film M1 is not present in the surface SF of the wafer W. More specifically, step ST5 forms the second film M2 by atomic layer deposition on the surface SF exposed in the surface SF of the wafer W. The region where the first film M1 is not present is a region of the surface SF of the wafer W where the first film M1 is not formed in step ST 5. The region where the first film M1 is not present can further include: the first film formed in step ST1 on the surface SF of the wafer W is passed through the plasma treatment before step ST5 or the region removed in step ST 5. The process SQ1 includes: step ST2a (third step), step ST2b (fourth step), step ST2c (fifth step), and step ST2d (sixth step). By repeating the process SQ1, the second film M2 is formed on the surface SF of the wafer W. Steps ST1 and ST5 constitute a flow SQ2.
The flow SQ1 represents 1 cycle of atomic layer deposition. Fig. 3 shows a series of steps of a typical atomic layer deposition. Atomic layer deposition a precursor layer (layer Ly1 shown in fig. 3 (b)) is formed on the surface of the wafer W using plasma P1 of a second gas G1 (precursor gas). Next, the process space Sp is purged to remove the unadsorbed second gas G1. Next, an atomic layer deposition layer (layer Ly2 shown in fig. 3 (c)) is formed by changing the precursor layer using a modifying plasma. Then, the process space Sp is selectively purged.
In the flow SQ1, the step ST2a supplies the second gas G1 into the process container 12, and forms a precursor layer in a region (e.g., the surface SF 2) of the wafer W where the first film M1 is not present. The second gas G1 is chemisorbed (chemisorbed) on the surface of the wafer W to form a precursor layer. The second gas G1 may be any one of an aminosilane-based gas, a silicon-containing gas, a titanium-containing gas, a hafnium-containing gas, a tantalum-containing gas, a zirconium-containing gas, and an organic-containing gas. In step ST2a, the plasma of the second gas G1 may be generated, or the plasma of the second gas G1 may not be generated.
In step ST2b, the process space Sp is purged. The second gas G1 in the gas phase state is removed by purging. For example, in step ST2b, an inert gas such as argon or nitrogen is supplied into the process container to purge the process container. In this step, too, the gas molecules excessively adhering to the surface OPa inside the opening OP are removed, and the precursor layer becomes a monolayer.
In step ST2c, the precursor layer is converted (modified) into an atomic layer (a part of the second film M2) by exposing the precursor to a modifying plasma in the processing vessel 12. In this step, a third gas is used that converts the precursor layer into a thin film. The third gas may be any one of an oxygen-containing gas, a nitrogen-containing gas, and a hydrogen-containing gas. The third gas may include, for example, any one of O 2 gas, CO 2 gas, NO gas, SO 2 gas, N 2 gas, H 2 gas, and NH 3 gas. In step ST2c, a third gas is supplied into the processing space Sp. High-frequency power is supplied from the first high-frequency power supply 62 and/or the second high-frequency power supply 64, and plasma (modified plasma) of the third gas is generated. The generated modifying plasma modifies the precursor layer. Further, a part of the first film M1 is removed by the modifying plasma, so that the film thickness of the first film M1 is reduced. Thus, even if the first film M1 is formed on the surface SF2 in step ST1, the first film M1 can be removed from the surface SF2 by performing SQ1 more than 1 time. At this time, the film thickness of the thin film of the first film M1 formed on the surface SF1 is also reduced.
Next, step ST2d purges the process space Sp. Specifically, the third gas supplied in step ST2c is exhausted. For example, in step ST2d, an inert gas such as argon or nitrogen gas may be supplied into the processing space Sp to be exhausted. The step ST2d may not be included in the SQ 1.
As described above, by performing the flow SQ1 for 1 cycle, a layer constituting the second film M2 can be formed on the surface SF2 in one layer. By repeating the process SQ1, the second film M2 can be formed on the surface SF2 exposed by removing the first film M1.
In the cases shown in fig. 4 and 5, the time TMb indicates a time when the first film M1 on the surface SF2 is completely removed to expose the surface SF2 by performing step ST5 (flow SQ 1). In the case shown in fig. 6, the time TMa2 indicates a time when the first film M1 on the front surface SF2 is completely removed to expose the front surface SF2 by performing step ST1a in step ST1 and performing step ST 5.
The first film M1 on the surface SF1 is also removed during the execution of step ST 5. Therefore, as shown in fig. 5 and 6, the value of the thickness TH3 of the first film M1 at the end of the execution of step ST5 is smaller than the value of the thickness (thickness TH1a in the case of fig. 5 and thickness TH2 in the case of fig. 6) of the first film M1 at the start of the execution of step ST 5. In the case of fig. 5, the value of the thickness TH2 of the first film M1 on the surface SF1 at the time TMb is smaller than the value of the thickness TH1a of the first film M1 on the surface SF1 at the time TMa2 at which the step ST5 is started.
Time TMc shown in fig. 5 and 6 indicates a time when the first film M1 on the surface SF1 is removed to expose the surface SF1, and the second film M2 starts to be formed on the surface SF 1. The line LP4 (chain line) shown in fig. 5 and 6 indicates a change in the film thickness of the second film M2 on the surface SF1 when the second film M2 starts to be formed on the surface SF1 after the time TMc.
Referring to fig. 5, a change in film thickness of the first film M1 and the second film M2 in the flow SQ1 will be described. The first film M1 is formed on the surface SF1 and the surface SF2, respectively, through step ST 1. In the case of fig. 5, at time TMa2, in the case of fig. 6, at time TMa3, a first film M1 (line LP 3) having a thickness TH1a is formed on the surface SF1, and a first film M1 (line LP 2) having a thickness TH1b is formed on the surface SF 2.
The speed of forming the first film M1 on the surface SF1 (the inclination of the line LP3 in step ST 1) is faster (the inclination is greater) than the speed of forming each of the first film M1 and the second film M2 on the surface SF2 (the inclination of the line LP2 in step ST1, the inclination of the line LP1 in step ST 5).
In the case of fig. 5, the first film M1 on the surface SF1 is removed and the film thickness is reduced by the subsequent step ST 5. In the case of fig. 6, the first film M1 on the surface SF1 is removed and the film thickness is reduced by step ST1a (cleaning) starting at the time TMa3 during the execution of step ST1 and step ST5 following step ST 1. On the other hand, by repeating the flow SQ1, the first film M1 is removed from the surface SF2, and thereafter, the second film M2 is formed on the surface SF 2.
By repeating the process SQ1, the first film M1 on the surface SF1 is removed, and at the end of step ST5, the first film M1 remains on the surface SF1 or the surface SF1 is exposed. A second film M2 is formed on the surface SF 2. Therefore, as shown in fig. 4, at the time TMa1 at which step ST5 ends, the thickness TH3 of the first film M1 on the surface SF1 is smaller than the value of the thickness TH2, or is 0.
Next, in the method MT, it is determined in step ST3 whether or not to end the flow SQ1. Specifically, in step ST3, it is determined whether or not the number of repetitions of the flow SQ1 has reached a predetermined number.
If it is determined in step ST3 that the number of times of repetition of the flow SQ1 has not reached the preset number of times (step ST3: no), the flow SQ1 is repeated. On the other hand, if it is determined that the number of times of repetition of the flow SQ1 has reached the preset number of times (yes in step ST 3), the flow SQ1 is terminated. In this way, the method MT repeats step ST 5a plurality of times (flow SQ 1).
The number of times of repeating the flow SQ1 may be determined according to the thickness of the first film M1. In one embodiment, the determination may be made based on the time at which a portion of the first film M1 remains on the surface SF 1. In another embodiment, the number of times of repeating the flow SQ1 may be set based on the time TMc when the first film M1 is removed from the surface SF 1.
In the method MT, the procedure SQ2 is executed 1 or more times. By repeating the flow SQ2, as indicated by the line LP3 in fig. 5, the first film M1 is formed on the first film M1 on the SF 1. As shown by a line LP1 of fig. 5, the second film M2 is continuously formed on the surface SF 2. The process SQ2 is repeated until the thickness of the second film M2 becomes the target thickness. In the flow SQ2, the first film M1 is formed again in step ST1, and the second film M2 is further formed in step ST 5. Step ST1 and step ST5 can be performed continuously in the same process container (process container 12) while maintaining a vacuum.
Next, in the method MT, it is determined in step ST4 whether or not to end the flow SQ2. More specifically, in step ST4, it is determined whether or not the number of repetitions of the flow SQ2 has reached a predetermined number.
If it is determined in step ST4 that the number of times of repetition of the flow SQ2 has not reached the preset number of times (step ST4: no), the flow SQ2 is repeated. On the other hand, when it is determined in step ST4 that the number of times of repetition of the flow SQ2 has reached the preset number of times (yes in step ST 4), the flow SQ2 is ended.
Here, the number of repetitions of the flow SQ2 is determined based on the target film thickness of the second film M2 on the surface SF 2. That is, by setting the number of repetitions of the flow SQ2, the film thickness of the second film M2 can be adjusted.
In another embodiment, step ST5 may also continue after 2 passes of time TMa 1. In this case, the first film M1 on the surface SF1 is removed in step ST5, and step ST5 is repeated after exposure. As a result, the second film M2 can be formed also on the surface SF 1. On the other hand, the second film M2 is formed on the surface SF2 to become a thicker second film M2.
In another embodiment, step ST1a of cleaning the wafer W may be performed after the first film M1 is formed in step ST 1. When step ST1a is performed, a part of the first film M1 formed on the surface SF of the wafer W is removed, and the surface SF2 is exposed. By adopting this manner, the formation of the second film M2 on the surface SF2 is started immediately after the start step ST5 (fig. 6 shows a change in the film thickness of the second film M2 formed on the surface SF2 of the region R1). In this case, TMa and TMb are at the same time.
In another example, in step ST1, by changing the conditions of the plasma CVD, the first film M1 having a different film thickness can be formed on the surface SF1 and the surface SF 2.
For example, in fig. 7 (a), the first film M1 is formed thicker at the upper part of the pattern, and the first film M1 becomes thinner toward the bottom of the pattern. In fig. 7 (b), a first film M1 is formed on the upper and bottom of the pattern. The first film M1 formed at the upper portion may be thicker than the first film formed at the bottom portion. The first film M1 is hardly formed at the sidewall (Sidewall) portion of the pattern. The patterns shown in fig. 7 (a) and 7 (b) may be formed by etching before the method MT is performed.
Referring to fig. 8, a method using anisotropic plasma conditions in step ST1 will be described. A pattern is provided on the surface SF of the wafer W. The pattern is formed by etching before the implementation of the method MT. Here, the region R1 is an upper region (low aspect ratio region). Region R2 is the bottom region (high aspect ratio region). In this example, the surface of the region R1 is referred to as a surface SF1, and the surface of the region R2 is referred to as a surface SF2. As shown in the state CD1, the first film M1 is formed thicker on the surface SF1, and the first film M1 is formed thinner on the surface SF2 or the first film M1 is not formed. The state CD1 indicates an example in which the first film is not formed on the surface SF2.
The state CD1 indicates a case where the first film M1 is formed on the surface SF1 by performing step ST 1. The first film M1 is provided only on the surface SF1. When the first film M1 is formed on a surface other than the surface SF1 (for example, the surface SF 2) in step ST1, the first film M1 formed on the surface other than the surface SF1 is removed by using oxygen-containing plasma or the like, which is called a state CD1 (step ST1 a).
The state CD2 indicates the state of the wafer W at the time TMa when the first step ST5 ends and before the second step ST 1. The first film M1 is thinned by removing a part thereof, in step ST 5. The second film M2 is formed on the sidewalls and the bottom by atomic layer deposition in step ST 5.
Reference is next made to fig. 9. The state CD3 indicates the state of the wafer W at the time TMa of the second time of the start ST5 after the second step ST1 after the state CD 2. In the state CD3, the first film M1 is formed again by the step ST1 of the second time.
State CD4 indicates wafer W at time TMa (before execution of step ST1 of the third time) after step ST5 of the second time after state CD 3. The first film M1 is thinned by being removed in step ST 5. At the bottom of the pattern (region R2), the second film M2 is formed thicker by step ST 5. The process SQ2 may be performed a plurality of times until the second film M2 becomes a desired thickness. Since the opening (region R1) is not blocked as compared with the case where the first film M1 is formed to be thick at one time, the subsequent step ST5 (atomic layer deposition) can be performed with good control performance.
Fig. 10 shows yet another embodiment. The pattern used in this embodiment mode is formed by etching performed before the method MT. The etching and the method MT may be performed continuously in the same processing vessel. The state CD5 indicates the state of the wafer W in the case where the first film M1 is provided in the region R1 on the upper side of the structure (feature) and the region R2 on the bottom of the structure by the first step ST 1. The first film M1 is formed on the surface SF1 and the surface SF2.
The state CD6 indicates the wafer W before the second step ST1 after the first step ST5 (time TMa) is performed on the state CD 5. In the state CD6, the first film M1 on the surface SF1 is thinned by being removed in step ST 5. On the other hand, the first film M1 on the surface SF2 is removed to expose the surface SF 2. On the other hand, on the side wall (surface SF 3) of the structure, a second film M2 is formed.
The state CD7 shown in fig. 11 indicates the wafer W in the case where the step ST5 is continued even after the state CD 6. When step ST5 is performed, the first film M1 on the surface SF1 is removed and exposed. A second film M2 is formed on the surface SF 2. The second film M2 on the surface SF3 is thicker than the second film M2 on the surface SF 2.
The state CD8 shown in fig. 11 represents the wafer W in the case where step ST5 is continued even after the state CD 7. On the surface SF1 exposed in the state CD7, the second film M2 is formed by step ST 5. The second film M2 on the surface SF3, the second film M2 on the surface SF2, and the second film M2 on the surface SF1 become thinner in this order. In this way, the second film M2 having a different thickness can be formed in each of the regions R1, R2, R3, and the like. Here, an example of the anisotropic plasma is described, and when the first film M1 is formed by using the isotropic plasma, the second film having a film thickness different from one region to another can be formed by repeating step ST 5.
While the example in which the first film M1 is further formed after the state CD6 to form the second film having a different film thickness has been described above, the example is not limited to this, and the region R2 may be etched after the state CD 6. In this way, the second film M2 is formed on the side wall (surface SF 3) of the structure, and therefore bowing (bowing) at the time of etching can be suppressed. The method MT and the subsequent etching may be performed in the same processing vessel. By adopting such a manner, the productivity can be improved.
Modification 1 unsaturated atomic deposition
In step ST5, the second film M2 can be partially conformally formed by making the formation of the precursor layer on the surface of the wafer W unsaturated in step ST2a and/or by making the conversion of the precursor layer into the second film M2 unsaturated in step ST2 c. That is, the formation of the second film M2 of step ST5 may also be performed by unsaturated atomic deposition. Unsaturated atomic deposition satisfies any one of the following (a) to (c).
(A) The adsorption of the second gas G1 for forming the precursor layer in the region of the wafer W where the first film M1 is not present is unsaturated.
(B) Is a modified unsaturated of the second gas G1 adsorbed on the region of the wafer W where the first film M1 is not present.
(C) The adsorption of the second gas G1 and the modification of the second gas G1 adsorbed on the region of the wafer W where the first film M1 is not present are unsaturated.
The unsaturated atomic deposition may not be performed to completely modify the second gas G1, in addition to the adsorption of the second gas to the entire surface. The second film can be formed partially conformally by unsaturated atomic deposition. More specifically, the second film M2 can be formed thicker at the upper portion of the pattern, and the second film M2 can be formed thinner as going to the bottom of the pattern. In addition to the matters (a) to (c) described above, the steps, conditions, and the like for unsaturated atomic deposition can be the same as those for the above-described normal atomic deposition. Therefore, even in the case where unsaturated atomic deposition is performed instead of normal atomic deposition in step ST5, a part of the first film M1 can be removed by the third gas in step ST2c, and the film thickness of the first film M1 can be reduced or eliminated.
Fig. 12 and 13 show modification 1 of forming the second film M2 in step 5 by unsaturated atomic deposition. The pattern used in modification 1 was formed by etching performed before the method MT. The etching and the method MT may be performed continuously within the same processing vessel (e.g., processing vessel 12). The state CD9 indicates the state of the wafer W in the case where the first film M1 is provided in the region R1 on the upper side of the structure (feature) and the region R2 on the bottom of the structure by the first step ST 1. The first film M1 is formed on the surface SF1 and the surface SF2.
The state CD10 indicates the wafer W before the second step ST1 after the first step ST5 (time TMa 1) of the state CD 9. In the state CD10, the first film M1 on the surface SF1 is thinned by being removed in step ST 5. On the other hand, the first film M1 on the surface SF2 is removed to expose the surface SF 2. Further, a second film M2 is formed on the side wall (surface SF 3) of the structure. In modification 1, since the formation of the second film M2 in step ST5 is performed by unsaturated atomic deposition, the second film M2 is formed thicker in the upper portion of the pattern, and the second film M2 becomes thinner as going toward the bottom of the pattern. In the state CD9, the second film M2 is not formed on the bottom of the pattern, regardless of the presence or absence of the first film M1.
State C11 shown in fig. 13 shows the wafer W in the case where step ST5 is continued even after state CD 10. When step ST5 is performed, the first film M1 on the surface SF1 is removed to expose the surface SF 1.
The state CD12 shown in fig. 13 shows the wafer W in the case where step ST5 is continued even after the state CD 11. In the state C12, the second film M2 is formed on the surface SF1 exposed in the step ST 5.
In this way, by performing the formation of the second film M2 in step ST5 by unsaturated atomic deposition, the formation position and film thickness of the second film M2 can be further adjusted.
( Modification 2: modification of the treatment conditions according to the thickness of the first film M1 )
In the case where step ST5 and a step of etching the wafer W in the process container 12 after step ST5 (step ST6 shown in fig. 14 described later) are repeatedly performed, the position and thickness of the second film M2 can be changed by changing the process conditions of step ST 5. That is, although the example in which the first film M1 is further formed after the state CD10 and the second film M2 is formed has been described above, the present invention is not limited to this example, and the region R2 may be etched after the state CD 10. The etching of the region R2 may be repeated, and the process SQ1 or the process SQ2 may be repeated. In this way, since the second film M2 is formed on the side wall (surface SF 3) of the structure, abnormal shape such as bowing during etching can be suppressed.
Fig. 14 is a flowchart showing an example of a processing method in the case of etching the region R2 after forming the second film M2. Fig. 15 and 16 are diagrams for explaining an example of the processing method shown in fig. 14.
The state CD13 shown in fig. 15 corresponds to the state CD10 shown in fig. 12, and shows the state of the wafer W before etching the region R2. The first film M1 is formed on the surface SF1, and the second film M2 is partially conformally formed on the sidewall (surface SF 3). The second film M2 is formed so as to cover a portion directly below the first film M1 where shape abnormality is likely to occur due to etching.
State CD14 represents a state after the first etching ST6 is performed on state CD 13. The first film M1 is formed on the surface SF1, and the second film M2 is partially conformally formed on the sidewall (surface SF 3). The inner wall of the second film M2 is removed by etching. When steps ST5 and ST6 are further repeatedly performed from the state CD14, the top of the first film M1 is gradually removed, and the distance from the top of the first film M1 to the surface SF2 of the region R2 to be etched changes (state CD 15). In this case, when the second film M2 is formed without changing the processing conditions of steps ST2a and ST2c, the position where the second film M2 is formed is lower than the position directly under the first film M1 where the shape abnormality occurs.
Then, modification 2 determines whether or not the film thickness of the first film MT1 is a predetermined value after etching (step ST 6) and step ST7 (step ST 8). The determination of whether or not the film thickness of the first film M1 is a predetermined value may be performed based on the film thickness of the first film M1 before the execution of step ST5 and the number of executions of steps ST5 and ST 6. When it is determined that the film thickness of the first film M1 is a predetermined value (yes in step ST 8), the processing conditions in step ST2a and step ST2c are set again (step ST 9). For example, in the case where the process conditions are set so that the coverage in step ST2a is changed in the depth direction of the pattern, the process conditions are changed so that the second gas G1 is adsorbed only on the upper portion of the pattern. For example, the processing time in the subsequent step 2a is shorter than the processing time in the immediately preceding step ST2 a. Further, for example, in the case where the process conditions are set so that the coverage in step ST2c is changed in the depth direction of the pattern, the process conditions are changed so that the third gas reacts only at a position further toward the upper portion of the pattern. For example, the temperature of the process chamber is reduced. On the other hand, when it is determined that the film thickness of the first film M1 is not the predetermined value (no in step ST 8), the process returns to step ST5 without changing the process conditions.
In this way, by adjusting the processing conditions in accordance with the film thickness of the first film M1, the second film M2 can be selectively formed at a position where a shape abnormality is likely to occur. For example, in the state CD15, the film thickness of the first film M1 is about half of that at the start of the process, and the distance from the top to the region R1 to be etched becomes shorter. In this case, the processing conditions are changed, and the distance in the depth direction of forming the second film M2 is shortened. Then, as in the state CD16, the second film M2 can be continuously formed at a position immediately below the first film M1 where the shape abnormality is likely to occur.
In addition, when the shape abnormality occurs in the region R1 to be etched, the pattern shape can be corrected by updating the processing conditions and executing step ST 5.
Further, when the aspect ratio of the pattern is increased by etching (step ST 6), the processing conditions of step ST2a and step ST2c may be changed in accordance with the increase in the aspect ratio. For example, the transport amount of the radicals generated in step ST2c may be increased. That is, as the number of times of etching (step ST 6) increases, the processing conditions are changed so that the position where the second film M2 is formed is at the upper portion of the region R1 to be etched. In the case where the process conditions are repeated in steps ST2a and ST2c, the process conditions may be different each time, or the process conditions may be different after repeated steps ST2a and ST2 c. In addition, the process conditions may be changed appropriately according to reasons other than the first film M1.
Modification 3 film thickness control in wafer plane
In modification 1 and modification 2, the coverage and film thickness of the second film M2 are adjusted by adjusting the process conditions. The processing conditions in step ST2a and step ST2c can be adjusted in the following two viewpoints.
(1) The film formation position in the depth direction of the pattern is controlled by controlling the dose.
(2) The film thickness of the second film M2 formed is controlled.
In modification 1 and modification 2, the film formation position is controlled mainly from the viewpoint of (1) above. Modification 3 further adjusts the process conditions from the viewpoint of (2) above. That is, in step ST5, the temperature of the stage PD on which the wafer W is placed is controlled to be different depending on the position, and the thickness of the second film M2 to be formed can be changed in accordance with the temperature of the stage PD. Fig. 17 is a diagram for explaining a relationship between a temperature of an object to be processed (for example, a wafer W) and a film formation amount. The horizontal axis of FIG. 17 shows the temperature [. Degree.C ] of the wafer W, and the vertical axis of FIG. 17 shows the film formation amount [ nm ]. The wafer W to be processed in the substrate processing apparatus (e.g., the plasma processing apparatus 10) is, for example, in the shape of a disk having a diameter of about 300 mm. It is known that when a film formation process is performed on a wafer W, the film formation amount varies according to the temperature of the wafer W. Fig. 17 (a) shows a relationship between the temperature of the wafer W and the film formation amount. As shown in fig. 17 (a), the film formation amount increases when the temperature of the wafer W becomes high, and decreases when the temperature of the wafer W becomes low.
On the other hand, the following trends are known: when etching or the like is performed, the shape abnormality (e.g., bow) becomes small in the center portion CP of the wafer W, and the shape abnormality becomes large in the edge portion EP of the wafer W (see fig. 17B).
Then, in modification 3, as shown in fig. 17 (B), the constitution is as follows: the stage (electrostatic chuck) of the wafer W is divided into a plurality of concentric zones ZN, and the temperature of each zone ZN can be independently controlled. The temperature of the center portion CP having a tendency of abnormally small shape is controlled so as to be lower than that of the edge portion EP having a tendency of abnormally large shape. By controlling in this way, the thickness of the protective film to be formed can be adjusted according to the radial position of the wafer W, and the in-plane uniformity of the opening size to be formed can be improved.
In addition, as shown in fig. 17 (B), a plurality of zones ZN are provided in the radial direction and the circumferential direction so as to control the film thickness, and the temperature control can be performed independently for each zone ZN. For example, a process of forming openings of different shapes by changing the thickness of the protective film formed at each position of the wafer W can be realized.
Next, a plurality of specific examples of the processing conditions usable in step ST1, step ST2a, and step ST2c will be described in examples 1 and 2.
(Example 1) plasma CVD is performed in step ST 1. The surface SF of the wafer W includes a SiO 2 film and a Si mask provided thereon.
< Step ST1 >)
Pressure in the treatment space Sp: 20[ mTorr ]
Power of the first high-frequency power supply 62: 300[ W ]
Power of the second high-frequency power supply 64: 0[W ]
First gas flow rate: c 4F6 gas (30 [ sccm ])/Ar gas (300 [ sccm ])
Temperature of wafer W: 40 DEG C
Execution time: 15[ seconds ]
< Step ST2a >)
Pressure of the treatment space Sp: 100[ mTorr ]
Power of the first high-frequency power supply 62: 0[W ]
Power of the second high-frequency power supply 64: 0[W ]
First gas flow rate: aminosilane gas (50 [ sccm ])
Temperature of wafer W: 10 DEG C
Execution time: 15[ seconds ]
< Step ST2c >)
Pressure of the treatment space Sp: 200[ mTorr ]
Power of the first high-frequency power supply 62: 300[ W ]
Power of the second high-frequency power supply 64: 0[W ]
First gas flow rate: CO 2 gas (300 [ sccm ])
Temperature of wafer W: 10 DEG C
Execution time: 10[ seconds ]
(Example 2) in example 2, anisotropic plasma CVD was performed in step ST 1. The Si mask provided on the SiO 2 film of the surface SF of the wafer W is used for demarcating.
< Step ST1 >)
Pressure of the treatment space Sp: 30[ mTorr ]
Power of the first high-frequency power supply 62: 0[W ]
Power of the second high-frequency power supply 64: 25[ W ]
First gas flow rate: c 4F6 gas (40 [ sccm ])/Ar gas (1000 [ sccm ])
Temperature of wafer W: 60 DEG C
Execution time: 15[ seconds ]
< Step ST2a >)
Pressure of the treatment space Sp: 200[ mTorr ]
Power of the first high-frequency power supply 62: 0[W ]
Power of the second high-frequency power supply 64: 0[W ]
First gas flow rate: aminosilane gas (100 [ sccm ])
Temperature of wafer W: 60 DEG C
Execution time: 15[ seconds ]
< Step ST2c >)
Pressure of the treatment space Sp: 200[ mTorr ]
Power of the first high-frequency power supply 62: 500[ W ]
Power of the second high-frequency power supply 64: 0[W ]
First gas flow rate: CO 2 gas (300 [ sccm ])
Temperature of wafer W: 60 DEG C
Execution time: 2[ seconds ]
In the method MT described above, the plasma generated in step ST1 may be either anisotropic or isotropic, and may be adjusted in accordance with the thickness distribution of the second film M2. In another embodiment, when the process SQ2 is repeated, the step ST1 of performing anisotropic plasma CVD and the step ST1 of performing isotropic plasma CVD may be repeated. In another embodiment, during the first execution of step ST1, anisotropic plasma CVD and isotropic plasma CVD may be sequentially performed. Further, the CVD conditions of step ST1 of the m-th time (m is a positive integer) may be made different from those of step ST1 of the m+1th time. By adopting such a manner, the formation site of the first film M1 can be changed, and the film thickness distribution of the first film M1 can be formed.
In the above-described method MT, various changes can be made to the conditions of the plasma CVD performed in step ST 1. Here, a case where a pattern is provided on the surface of the wafer W by etching is considered. The pattern has low aspect ratio regions and high aspect ratio regions. In one embodiment, the gas type of the first gas used in step ST1 can be changed. As the first gas, for example, C 4F6 gas or C 4F8 gas can be used. The sticking coefficient of the C 4F6 gas is larger than that of the C 4F8 gas. Therefore, when C 4F6 is used, the first film M1 is formed more on the surface side (low aspect ratio region) of the wafer W. On the other hand, when C 4F8 is used, the first film M1 is formed more on the bottom side (high aspect ratio region). In this way, since the adhesion coefficient is different depending on the gas species, the formation position of the first film M1 can be controlled by changing the gas species.
Further, the electric power of the second high-frequency power source 64 may also be changed. In one example, the power can be turned on/off. In another example, the value of the power may be varied between a high value and a low value. When the value of the electric power is increased, the first film M1 is formed thicker at the level (upper surface and bottom) of the structure as shown in fig. 7 (b). On the other hand, the first film M1 formed on the side wall is thin. When the value of the electric power is reduced, the first film M1 is formed more on the upper side.
In another embodiment, the wafer temperature at step ST1 can be changed. When the temperature at the time of execution of step ST1 becomes relatively high, the first film M1 is formed more on the bottom side (high aspect ratio region). When the temperature at step ST1 becomes relatively low, the first film M1 is formed more on the surface side (low aspect ratio region) of the wafer W.
Further, the pressure at step ST1 can be changed. The plasma generated when the pressure is relatively high is isotropic. A thicker first film M1 is formed on the surface side (low aspect ratio region) of the wafer W by isotropic plasma. On the other hand, the plasma generated when the pressure is relatively lowered is anisotropic. A thicker first film M1 is formed on the bottom side (high aspect ratio region) by using anisotropic plasma.
Further, by changing the power of the first high-frequency power supply 62 at the time of execution of step ST1, the dissociation state of the plasma can be changed. Therefore, by changing the electric power, the kind of radicals or the ratio of radicals generated is changed, and the adhesion coefficient at the time of forming the first film M1 is changed.
In the above-described method MT, the conditions of step 5 can be variously changed. In one example, the execution time (time for generating plasma) of step ST2c can be changed. By this change, the removal amount of the first film M1 can be adjusted.
Further, in step ST2c, the electric power of the second high-frequency power supply 64 can be changed. When the electric power of the second high-frequency power source 64 is relatively increased, the first film M1 of the horizontal portion (upper surface, bottom) of the structure (feature) is removed more. When the electric power of the second high-frequency power source 64 is relatively reduced, the amount by which the sidewall portion (sidewall) of the structure in the first film M1 is removed increases.
In addition, in step ST2c, the pressure inside the process container 12 can be changed. When the pressure is relatively increased, ion energy in the plasma becomes small, and an isotropic reaction can be caused to occur mainly. When the pressure is relatively reduced, ion energy in the plasma becomes large, and an anisotropic reaction can be caused to occur mainly. Therefore, the region where the first film M1 is removed and the removal amount of each region can be adjusted by changing the pressure.
Further, at the time of execution of step ST2c, the electric power of the first high-frequency power supply 62 can be changed. When the power is relatively increased, the plasma density can become large.
As described above, when step ST1 and step ST5 are repeatedly executed, the above 1 or more conditions of step ST1 or step ST5 may be different between the execution of the mth time (m is a positive integer) and the execution of the (m+1) th time. When the process SQ1 is repeatedly executed to selectively form the second film M2 in the region R2, the above-described condition of 1 or more in step ST2c may be different between the execution of the nth time (n is a positive integer) and the execution of the (n+1) th time. By adopting such a mode, the film formation controllability of the first film M1 and/or the second film M2 can be improved.
By adjusting the execution time of step ST2a within a range of, for example, 2 seconds to 10 seconds, the removal amount of the first film M1 can be controlled. In this case, the removal amount of the first film M1 may be 1[ nm ] or less (for example, 0.1[ nm ] to 0.5[ nm ]) every 1 cycle of the flow SQ 1. Further, in the case where the second film M2 contains SiO 2, the deposition amount of the second film M2 is a monoatomic layer (i.e., about 0.2 nm) every 1 cycle of the flow SQ 1. For example, when fluorocarbon of about 10 nm is provided as the first film M1, the process SQ1 of 10 to 100 cycles is performed to remove the first film M1, and the second film M2 of about 2 to 20 nm is formed. The first gas for forming the first film M1 may be selected according to the application, and may include CF-based gas, CHF-based gas, CO-gas, CH-gas, and the like.
The method MT can also perform step ST1 and step ST5 in the process containers of different plasma processing apparatuses. Step ST1 forms a first film M1 on a region R1 of a wafer W by chemical vapor deposition using a plasma of a first gas in a first process container. Step ST5 forms the second film M2 by atomic layer deposition in the region R2 where the first film M1 is not formed in the surface of the wafer W in the second process container. The method MT repeatedly executes step ST1 and step ST5.
The method MT of the above embodiment can be executed using an inductively coupled (Inductively Coupled Plasma) type plasma processing apparatus. Including the same gas supply system (gas source block 40, valve block 42, flow controller block 45, gas supply line 38, gas supply line 82, etc.) as the plasma processing apparatus 10.
The method MT may be performed alone, but the wafer W may be etched in the process container 12 to form a pattern before the method MT is performed. In another manner, the wafer W may be etched within the processing container 12 after the method MT is performed. The process MT and etching can also be carried out continuously in the same process vessel with vacuum maintained. Further, in another embodiment, the method MT and etching may be repeated in the same processing container. Since the processing can be performed in the same processing container without conveying the object to be processed, throughput can be improved. Alternatively, the method MT and etching may be performed using different processing vessels. In this case, the plasma excitation method for the method MT and the plasma excitation method for etching may be different.
While various embodiments have been described above, it will be apparent to those skilled in the art that the present invention is capable of modification in arrangement and detail without departing from the spirit thereof. The present invention is not limited to the specific configuration described in the present embodiment. Therefore, all modifications and changes within the scope of the claims and the spirit thereof fall within the scope of the claims of the present invention.
Claims (18)
1. A method for processing an object to be processed, comprising:
A step of supplying the object to be processed into the processing container;
A first step of selectively forming a first film on a surface of the object to be treated by plasma chemical vapor deposition; and
A second step of forming a second film by atomic layer deposition in a region where the first film does not exist in the surface of the object to be treated,
The second step includes:
a step of supplying a precursor gas to the object to be processed to form a precursor layer on the surface of the object to be processed; and
A step of converting the precursor layer into the second film by exposing the precursor layer to a modifying plasma for modification of the precursor layer,
During the formation of the second film, the film thickness of the first film decreases.
2. The process of claim 1, wherein:
the first step and the second step are repeatedly performed.
3. A treatment method according to claim 1 or 2, characterized in that:
The region where the first film is not present is a region where the first film is not formed in the first step.
4. A process according to claim 3, wherein:
The region where the first film is not present further includes: the region of the first film formed in the first step is removed in the plasma treatment before the second step or in the second step.
5.A treatment method according to claim 1 or 2, characterized in that:
In the first step, after the first film is formed on the surface, the first film on the surface of the object to be treated is removed.
6. A treatment method according to claim 1 or 2, characterized in that:
Repeatedly performing a process in the second step to form the second film,
The process comprises the following steps:
A third step of supplying the precursor gas into the processing container to form the precursor layer on the surface of the object to be processed;
A fourth step of purging a space in the process container after the third step;
A fifth step of converting the precursor layer into the second film by exposing the precursor layer to the modifying plasma in the processing vessel after the fourth step; and
A sixth step of purging the space in the process container after the fifth step.
7. A treatment method according to claim 1 or 2, characterized in that:
The second step is a step of repeatedly executing the flow,
The process comprises the following steps:
A third step of supplying the precursor gas into the processing container to form the precursor layer on the surface of the object to be processed;
A fourth step of purging a space in the process container after the third step;
A fifth step of converting the precursor layer into the second film by exposing the precursor layer to the modifying plasma in the processing vessel after the fourth step; and
A sixth step of purging the space in the process container after the fifth step,
The formation of the precursor layer of the surface of the object to be treated is unsaturated in the third step and/or the conversion of the precursor layer into the second film is unsaturated in the fifth step, whereby the second film is partially conformally formed.
8. The process of claim 6, wherein:
The precursor gas is any one of an aminosilane-based gas, a silicon-containing gas, a titanium-containing gas, a hafnium-containing gas, a tantalum-containing gas, a zirconium-containing gas, and an organic-containing gas,
The modified plasma is generated from any of an oxygen-containing gas, a nitrogen-containing gas, and a hydrogen-containing gas.
9. The process of claim 6, wherein:
In the case of repeatedly executing the flow, the condition of the fifth step is different between the nth execution and the (n+1) th execution, where n is a positive integer.
10. A treatment method according to claim 1 or 2, characterized in that:
the first step and the second step are continuously performed in the same process vessel while maintaining a vacuum.
11. A treatment method according to claim 1 or 2, characterized in that:
In the second step, the temperature of the stage on which the object to be processed is placed is controlled to be different depending on the position, and the thickness of the second film to be formed is changed depending on the temperature of the stage.
12. The processing method according to claim 1 or 2, characterized by further comprising:
A step of etching the object to be processed in the processing container before the first step; and
And a step of etching the object to be processed in the processing container after the second step.
13. The process of claim 12, wherein:
in the case where the second step and the step of etching the object to be processed in the processing container after the second step are repeatedly performed, the position and thickness of the second film are changed by changing the condition of the second step.
14. The process of claim 6, wherein:
in the case where the first step and the second step are repeatedly performed, the condition of the first step is different between when the mth execution and when the (m+1) th execution is performed, where m is a positive integer.
15. A method for processing an object to be processed, comprising:
a first step of selectively forming a first film on a surface of an object to be processed placed in a processing container by plasma chemical vapor deposition; and
A second step of forming a second film by atomic layer deposition on the surface of the object to be treated where the first film is not present,
In the second step of the process, the second step,
Supplying a precursor gas to the object to be processed to form a precursor layer in a region of the object to be processed where the first film is not present,
Purging the interior of the process vessel,
Converting the precursor layer into the second film by exposing the precursor layer to a modifying plasma in the processing vessel for modification of the precursor layer,
The modifying plasma reduces the film thickness of the first film.
16. The process of claim 15, wherein:
repeating the first step and the second step.
17. The process of claim 15, wherein:
the second film has a different film thickness in each region of the surface.
18. A plasma processing apparatus, comprising:
A processing container for storing an object to be processed; and
A control unit for controlling the process performed on the object to be processed in the processing container,
The control part comprises a flow execution part for repeatedly executing the flow,
The process comprises the following steps:
A first process of selectively forming a first film on a surface of the object to be processed disposed in the processing container by using plasma chemical vapor deposition; and
A second process of forming a second film by atomic layer deposition in a region of the surface where the first film is absent,
The second process includes:
a process of supplying a precursor gas to the object to be processed to form a precursor layer on the surface of the object to be processed; and
A treatment for converting the precursor layer into the second film by exposing the precursor layer to a modifying plasma for modification of the precursor layer,
During the formation of the second film, the film thickness of the first film decreases.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177056A (en) * | 1992-12-09 | 1994-06-24 | Hitachi Ltd | Gas treatment device |
| CN101075588A (en) * | 2006-05-16 | 2007-11-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure, semiconductor chip and manufacturing method thereof |
| CN101106075A (en) * | 2006-07-13 | 2008-01-16 | 东京毅力科创株式会社 | Film formation apparatus for semiconductor process and method for using the same |
| CN101488452A (en) * | 2008-01-19 | 2009-07-22 | 东京毅力科创株式会社 | Film formation method and apparatus for semiconductor process |
| CN103451619A (en) * | 2012-06-01 | 2013-12-18 | 气体产品与化学公司 | Organoaminodisilane precursors and methods for depositing films comprising same |
| CN103450242A (en) * | 2012-06-01 | 2013-12-18 | 气体产品与化学公司 | Organoaminodisilane precursors and methods for depositing films comprising same |
| CN105489483A (en) * | 2014-10-07 | 2016-04-13 | 东京毅力科创株式会社 | Workpiece processing method |
| WO2017170405A1 (en) * | 2016-03-29 | 2017-10-05 | 東京エレクトロン株式会社 | Method for processing object to be processed |
| CN107799400A (en) * | 2016-08-29 | 2018-03-13 | 东京毅力科创株式会社 | The method for handling handled object |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9418889B2 (en) * | 2014-06-30 | 2016-08-16 | Lam Research Corporation | Selective formation of dielectric barriers for metal interconnects in semiconductor devices |
| US10037884B2 (en) * | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
-
2019
- 2019-06-03 CN CN201910475932.4A patent/CN110581050B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177056A (en) * | 1992-12-09 | 1994-06-24 | Hitachi Ltd | Gas treatment device |
| CN101075588A (en) * | 2006-05-16 | 2007-11-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure, semiconductor chip and manufacturing method thereof |
| CN101106075A (en) * | 2006-07-13 | 2008-01-16 | 东京毅力科创株式会社 | Film formation apparatus for semiconductor process and method for using the same |
| CN101488452A (en) * | 2008-01-19 | 2009-07-22 | 东京毅力科创株式会社 | Film formation method and apparatus for semiconductor process |
| CN103451619A (en) * | 2012-06-01 | 2013-12-18 | 气体产品与化学公司 | Organoaminodisilane precursors and methods for depositing films comprising same |
| CN103450242A (en) * | 2012-06-01 | 2013-12-18 | 气体产品与化学公司 | Organoaminodisilane precursors and methods for depositing films comprising same |
| CN105489483A (en) * | 2014-10-07 | 2016-04-13 | 东京毅力科创株式会社 | Workpiece processing method |
| WO2017170405A1 (en) * | 2016-03-29 | 2017-10-05 | 東京エレクトロン株式会社 | Method for processing object to be processed |
| CN107799400A (en) * | 2016-08-29 | 2018-03-13 | 东京毅力科创株式会社 | The method for handling handled object |
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