CN110580329A - Method for calculating performance degradation acceleration factor of electronic product - Google Patents
Method for calculating performance degradation acceleration factor of electronic product Download PDFInfo
- Publication number
- CN110580329A CN110580329A CN201910864884.8A CN201910864884A CN110580329A CN 110580329 A CN110580329 A CN 110580329A CN 201910864884 A CN201910864884 A CN 201910864884A CN 110580329 A CN110580329 A CN 110580329A
- Authority
- CN
- China
- Prior art keywords
- temperature
- electronic product
- stage
- performance
- temperature change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015556 catabolic process Effects 0.000 title claims abstract description 71
- 238000006731 degradation reaction Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000001133 acceleration Effects 0.000 title claims abstract description 37
- 230000008859 change Effects 0.000 claims abstract description 51
- 238000012360 testing method Methods 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 28
- 238000007670 refining Methods 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 17
- 238000004364 calculation method Methods 0.000 claims description 7
- 230000001186 cumulative effect Effects 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 5
- 230000035882 stress Effects 0.000 description 50
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000007476 Maximum Likelihood Methods 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000013095 identification testing Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Data Mining & Analysis (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Databases & Information Systems (AREA)
- Operations Research (AREA)
- Probability & Statistics with Applications (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Algebra (AREA)
- Evolutionary Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Software Systems (AREA)
- General Engineering & Computer Science (AREA)
- Bioinformatics & Computational Biology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Abstract
The invention discloses a method for calculating an acceleration factor of electronic product performance degradation, which comprises the following steps: refining the temperature change process of the electronic product in the temperature change stress test process; calculating the performance accelerated degradation rate of the electronic product in the temperature change process; comprehensively obtaining the performance degradation accelerating factor of the electronic product under the temperature-varying stress condition. The invention is applied to the reliability acceleration test of the electronic product, shortens the test time and cost and quickly evaluates the reliability level of the electronic product.
Description
Technical Field
The invention relates to the field of reliability acceleration tests, in particular to a method for calculating an acceleration factor of electronic product performance degradation.
background
for highly reliable and long-life electronic products, it is increasingly difficult to evaluate the reliability of the products by using conventional life tests, and it usually takes a lot of time and cost to influence the development progress and reliability evaluation of the products. However, the product failure or functional failure is caused by physical or chemical reaction of atoms or molecules constituting the substance under stress over time, which causes the product to deteriorate in performance, and when such performance deterioration effect is accumulated to a certain extent, the product inevitably fails or fails. By utilizing high accelerated stress, chemical or physical reactions in the product can be accelerated, the faster the reaction is, the earlier the failure or the failure occurs, and by utilizing the relation between the change of the stress condition and the product performance degradation, namely a performance accelerated degradation model, the product failure life or the performance degradation rate under the high stress can be extrapolated to the product failure life or the performance degradation rate under the normal stress condition, which is the basic idea of the reliability accelerated test.
there are currently a number of rich efforts on the model of accelerated performance degradation. On the basis of researching the hydrolysis and conversion reaction of acid-catalyzed sucrose at temperature, the alensis summarizes that the performance degradation rate of a certain product is in inverse proportion to the index of activation energy and in inverse proportion to the index of temperature inverse number, and provides an alensis model which is mainly applied to a reliability acceleration test under a constant temperature condition. Lie in the process of studying the arrhenius model, propose to apply the activation energy definition of Tolman, i.e. the difference between the critical energy required for a certain reaction to take place and the average energy of the reactant molecules at a given temperature T, corrected the acceleration factor.
and (4) using the pre-test result, replacing the Gaussian random vibration stress adopted in the reliability identification test scheme selected by the national military standard GJB899A-2009 with the ultra-Gaussian random vibration stress, and keeping other stresses unchanged. According to the test time required by the two pre-test objects to excite the same fault mode in the pre-test, determining the acceleration coefficient of the pre-test objects under the action of the ultrahigh Gaussian random vibration stress and the Gaussian random vibration stress, wherein the ratio of the test time required by the two pre-test objects to excite the same fault mode is the acceleration coefficient. This method requires multiple pre-test subjects and is difficult to apply for only a single product.
in the reliability identification and acceptance test specified in the GJB899A-2009, which is generally a typical use environment encountered by a working state simulation product in a full life cycle or a task period, a test section contains more stress, the sensitive stress of a certain product is determined by using known fault mechanism and fault statistical data of the product, the reliability test section is cut, the test time is shortened, the 'invalid time' which does not have an effect on the fault of an exposed product is removed, the 'valid time' in each cycle is not shortened, and the efficiency of the reliability test is actually improved by the method.
And considering the failure ratio of the Guo-shaped constant light under each electrical stress, regarding each stage of the step-adding test as an independent body, processing the accumulated damage problem of the product tested in each step by a conditional probability method, giving a failure condition calculation method under a certain stress by using a maximum likelihood estimation method, and further deriving an acceleration factor.
On the basis of an acceleration factor expression of a random vibration test condition based on a narrow-band model, Chaihua applies a frequency domain estimation method of random vibration fatigue damage, namely a correction method based on the narrow-band model, to obtain a general expression of acceleration factor calculation of a broadband random vibration test condition, namely an acceleration factor of the broadband random vibration test condition based on fatigue damage equivalence.
The method for analyzing the process of the product performance accelerated degradation model is mainly applied to the process of performance accelerated degradation under the conditions of constant temperature stress, random vibration and constant electrical stress, and is not suitable for the stress condition of temperature change. Because the thermal expansion coefficients of components and parts of electronic products are different from those of a printed board, when the temperature changes circularly, the welding points of the components and parts can be alternately strained, so that the fatigue failure of the welding points is caused. Investigation statistics show that the temperature cycle test is the most effective stress implementation mode for exciting product faults, and because stress in the temperature cycle test continuously changes along with loading time, the implementation of temperature-dependent stress and the statistical analysis process of test data are relatively complex, and at present, specific research work on an acceleration model of the temperature-dependent stress is less. The electronic product has multiple potential failure modes under the temperature-variable stress condition, and is one of the key problems to be solved for developing the reliability accelerated test method research of the electronic product under the temperature-variable stress condition.
Disclosure of Invention
The invention provides a method for calculating a performance degradation acceleration factor of an electronic product under a temperature-varying stress condition, which is applied to a reliability acceleration test, has the characteristics of shortening the test time and reducing the test cost, and quickly evaluates the reliability level of the electronic product.
In order to achieve the purpose, the invention is realized by the following technical scheme: a method for calculating an acceleration factor of electronic product performance degradation is characterized by comprising the following steps:
s1, refining the temperature change process of the electronic product in the temperature change stress test process;
s2, calculating the performance accelerated degradation rate of the electronic product in the temperature change process;
and S3, comprehensively obtaining the product performance degradation accelerating factor of the electronic product under the temperature-varying stress condition.
the temperature change process of the electronic product is as follows:
wherein ,(t1，t2) Is a low temperature stage, (t)2，t3) For the temperature raising stage, (t)3，t4) In the high temperature stage, (t)4，t5) For the cooling phase, T (T) is the temperature at time T, Tuis the highest temperature, T, in a cycleLIs the lowest temperature in a cycle, k1Is the temperature change coefficient, k, at the temperature rise stage2is the temperature change coefficient in the cooling stage.
the temperature change coefficient k of the temperature rise stage1the calculation method is as follows:
Let X be ln ((t-t)2)/(t3-t2))，Y＝ln(T(t)-TL) Then, then
Y＝ln(Tu-TL)+k1X
Substituting the time t and the temperature measured by the time to derive a temperature change coefficient k at the temperature rise stage1。
The temperature change coefficient k of the cooling stage2The calculation method is as follows:
let U equal to ln ((t-t)4)/(t5-t4))，V＝ln(Tu-T (t)), then
V＝ln(Tu-TL)+k2U
substituting the time t and the temperature measured by the time to derive the temperature change coefficient k of the cooling stage2。
The performance accelerated degradation rate of the electronic product in the low-temperature stage is as follows:
Wherein A is a proportionality constant, EaIs the activation energy, k is the Boltzmann constant;
The performance accelerated degradation rate of the electronic product in the temperature rise stage is as follows:
Wherein r is the performance degradation cumulative effect under the constant temperature condition, g is the performance degradation cumulative effect under the variable temperature condition, and alpha is a proportionality constant;
The performance accelerated degradation rate of the electronic product at the high temperature stage is as follows:
the performance accelerated degradation rate of the electronic product in the cooling stage is as follows:
The performance degradation accelerating factor is as follows:
wherein ,Accelerating the degradation rate of the electronic product in each time stage under the condition of normal temperature variable stress; The degradation rate is accelerated for the performance of the electronic product in each time stage under the condition of high temperature and variable stress.
The invention has the following advantages:
The method for calculating the performance degradation acceleration factor of the electronic product, provided by the invention, refines the temperature change process of the electronic product in the actual temperature-variable stress test process, calculates the performance acceleration degradation rate of the electronic product under the normal temperature-variable stress condition aiming at each temperature change stage, adjusts the temperature range and the temperature change rate of the temperature-variable stress test, calculates the performance acceleration degradation rate of the electronic product under the high temperature-variable stress condition again, comprehensively obtains the performance degradation acceleration factor of the electronic product under the temperature-variable stress condition, can be applied to the reliability acceleration test, and quickly evaluates the reliability level of the electronic product.
Drawings
fig. 1 is a flowchart of a method for calculating an acceleration factor of performance degradation of an electronic product according to the present invention.
fig. 2 is a temperature variation curve of the electronic product during the temperature-varying stress test.
Detailed Description
The present invention will be further described in detail with reference to fig. 1-2, which illustrate a preferred embodiment.
as shown in fig. 1, the present invention comprises the following steps:
Step S1, refining the temperature change process of the electronic product in the temperature change stress test process;
Generally, during a temperature cycle test, the temperature change in the incubator is linear in the stages of temperature rise and temperature drop, while in the actual test process, the temperature change in the incubator is inconsistent, in order to obtain the temperature change process on the periphery of an electronic product or the product body of the electronic product, a heat sensor is attached to the temperature sensitive part of the electronic product, and a temperature change curve is fitted by actually measuring the temperature of the sensitive part of the electronic product in the temperature change stress test process.
In a temperature change cycle of an electronic product, a power function fitting equation of a temperature change curve in a temperature rise stage can be expressed as follows:
wherein T (T) is the temperature at T, TuIs the highest temperature, T, in a cycleLIs the lowest temperature in a cycle, t2、t3Is the time inflection point, k, in the temperature rise process1Is the temperature change coefficient in the temperature rise stage.
Let X be ln ((t-t)2)/(t3-t2))，Y＝ln(T(t)-TL) Then, then
Y＝ln(Tu-TL)+k1X
Substituting the time t and the temperature measured by the time to derive the temperature change coefficient k in the temperature rise stage1K is calculated1There are three values, 0.5, 1, 2 respectively.
The temperature change curve fitting equation in the cooling stage can be expressed as follows by adopting a power function model:
wherein ,t4、t5is the time inflection point, k, of the cooling phase2Is the temperature change coefficient in the cooling stage.
Let U equal to ln ((t-t)4)/(t5-t4))，V＝ln(Tu-T (t)), then
V＝ln(Tu-TL)+k2U
Substituting the time t and the temperature measured by the time to derive the temperature change coefficient k in the cooling stage2K is calculated2There are three values, 0.5, 1, 2 respectively.
Therefore, during a single cycle, the temperature variation process of the electronic product can be expressed as:
wherein ,t1、t2、t3、t4、t5Is the time inflection point, as shown in FIG. 2, when k is1、k2And when different values are taken, the temperature change curve graph of the electronic product is obtained.
And step S2, calculating the performance accelerated degradation rate of the electronic product in the temperature change process.
Under the condition of temperature-dependent stress, atoms or molecules forming substances are subjected to performance degradation along with time due to physical reasons, when the degradation is accumulated to a certain degree, a product fails, the applied external stress is larger, the physical reaction rate is higher, the failure is earlier, and the design of an accelerated test is derived from the physical degradation. A typical model of accelerated degradation of performance under constant temperature conditions is the arrhenius model:
r＝Aexp[-Ea/(kT)]
Where r is the cumulative effect of performance degradation, A is the proportionality constant, EaIs the activation energy, K is the boltzmann constant, K is 8.617E-5eV/K, T is the absolute temperature.
In the processes of temperature rising and temperature lowering, the product is subjected to cold and heat alternation, atoms or molecules forming the substance can expand or contract cold in the process, and the performance accelerated degradation model under the condition of variable temperature is as follows:
g＝exp(-α|dT(t)/dt|)
where g is the cumulative effect of performance degradation and α is a proportionality constant, typically α is 0.01.
In a temperature cycle heating and cooling stage, the performance of the electronic product is degraded and simultaneously influenced by a constant temperature effect and a temperature change effect: in the warm-up phase, i.e. (t)2,t3) The rate of performance-accelerated degradation of the electronic product over the period of time can be expressed as:
wherein ,F2Accelerating the degradation rate of the performance of the electronic product in the temperature rise stage;
The temperature reduction is the inverse of the temperature increase, namely (t)4,t5) The rate of performance-accelerated degradation of the electronic product over the period of time can be expressed as:
wherein ,F4accelerating the degradation rate of the performance of the electronic product in the cooling stage;
In the high-temperature phase, i.e. (t)3,t4) The rate of performance-accelerated degradation of the electronic product over the period of time can be expressed as:
wherein ,F3Accelerating the degradation rate of the performance of the electronic product at a high temperature stage;
in the low-temperature stage, i.e. (t)1,t2) The rate of performance-accelerated degradation of the electronic product over the period of time can be expressed as:
wherein ,F1The degradation rate is accelerated for the performance of the electronic product in the low-temperature stage.
And step S3, comprehensively obtaining the product performance degradation acceleration factor of the electronic product under the temperature-varying stress condition.
When the electronic product is tested, the test condition used at ordinary times is recorded as the normal temperature variable stress condition 1, and the accelerated degradation rates of the electronic product performance at different stages of temperature change are respectively obtained by calculation
accelerating temperature-variable stress cycle test, widening the temperature change range of the stress test, improving the temperature change rate in the heating and cooling stages, recording the test condition used for accelerating temperature-variable stress as a high-temperature variable stress condition 2, and calculating the accelerated degradation rates of the electronic product performance in different stages of temperature change to be respectively
The performance degradation acceleration factor of the high temperature stress condition 2 relative to the normal temperature variable stress condition 1 is as follows:
Among them, F can be used to quickly evaluate the reliability level of an electronic product.
the method for calculating the performance degradation acceleration factor of the electronic product, provided by the invention, refines the temperature change process of the electronic product in the actual temperature-variable stress test process, calculates the performance acceleration degradation rate of the electronic product under the normal temperature-variable stress condition aiming at each temperature change stage, adjusts the temperature range and the temperature change rate of the temperature-variable stress test, calculates the performance acceleration degradation rate of the electronic product under the high temperature-variable stress condition again, comprehensively obtains the performance degradation acceleration factor of the electronic product under the temperature-variable stress condition, can be applied to the reliability acceleration test, and quickly evaluates the reliability level of the electronic product.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (6)
1. a method for calculating an acceleration factor for performance degradation of an electronic product is characterized by comprising the following steps:
S1, refining the temperature change process of the electronic product in the temperature change stress test process;
S2, calculating the performance accelerated degradation rate of the electronic product in the temperature change process;
And S3, comprehensively obtaining the product performance degradation accelerating factor of the electronic product under the temperature-varying stress condition.
2. The method for calculating the performance degradation acceleration factor of the electronic product according to claim 1, wherein the temperature variation process of the electronic product is as follows:
wherein ,(t1，t2) Is a low temperature stage, (t)2，t3) For the temperature raising stage, (t)3，t4) In the high temperature stage, (t)4，t5) For the cooling phase, T (T) is the temperature at time T, Tuis the highest temperature in a cycle, TLis the lowest temperature in a cycle, k1Is the temperature change coefficient, k, at the temperature rise stage2Is the temperature change coefficient in the cooling stage.
3. The method according to claim 2, wherein the temperature coefficient of change k at the temperature-raising stage is calculated1the calculation method is as follows:
Let X be ln ((t-t)2)/(t3-t2))，Y＝ln(T(t)-TL) Then, then
Y＝ln(Tu-TL)+k1X
substituting the time t and the temperature measured by the time to derive a temperature change coefficient k at the temperature rise stage1。
4. The method for calculating the performance degradation acceleration factor of the electronic product according to claim 2, wherein the temperature change coefficient k in the cooling stage2The calculation method is as follows:
let U equal to ln ((t-t)4)/(t5-t4))，V＝ln(Tu-T (t)), then
V＝ln(Tu-TL)+k2U
substituting the time t and the temperature measured by the time to derive the temperature change coefficient k of the cooling stage2。
5. The method for calculating the performance degradation acceleration factor of the electronic product according to claim 2, wherein the performance degradation acceleration rate of the electronic product at the low-temperature stage is as follows:
Wherein A is a proportionality constant, EaIs the activation energy, k is the Boltzmann constant;
The performance accelerated degradation rate of the electronic product in the temperature rise stage is as follows:
wherein r is the performance degradation cumulative effect under the constant temperature condition, g is the performance degradation cumulative effect under the variable temperature condition, and alpha is a proportionality constant;
the performance accelerated degradation rate of the electronic product at the high temperature stage is as follows:
The performance accelerated degradation rate of the electronic product in the cooling stage is as follows:
6. The method of claim 5, wherein the performance degradation acceleration factor is:
wherein ,accelerating the degradation rate of the electronic product in each time stage under the condition of normal temperature variable stress; the degradation rate is accelerated for the performance of the electronic product in each time stage under the condition of high temperature and variable stress.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910864884.8A CN110580329B (en) | 2019-09-09 | 2019-09-09 | Method for calculating performance degradation acceleration factor of electronic product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910864884.8A CN110580329B (en) | 2019-09-09 | 2019-09-09 | Method for calculating performance degradation acceleration factor of electronic product |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110580329A true CN110580329A (en) | 2019-12-17 |
| CN110580329B CN110580329B (en) | 2023-05-16 |
Family
ID=68811781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910864884.8A Active CN110580329B (en) | 2019-09-09 | 2019-09-09 | Method for calculating performance degradation acceleration factor of electronic product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110580329B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111307178A (en) * | 2020-03-17 | 2020-06-19 | 中国科学院微小卫星创新研究院 | Degradation test method of passive high-power single machine for navigation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104182603A (en) * | 2013-05-24 | 2014-12-03 | 上海空间电源研究所 | Reliability evaluation method for long-service-life and high-reliability electronic product |
| CN105572498A (en) * | 2015-12-11 | 2016-05-11 | 中国航空工业集团公司西安飞机设计研究所 | Reliability acceleration test method of electronic products |
| US20190138926A1 (en) * | 2017-12-22 | 2019-05-09 | Beihang University | Degradation modeling and lifetime prediction method considering effective shocks |
-
2019
- 2019-09-09 CN CN201910864884.8A patent/CN110580329B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104182603A (en) * | 2013-05-24 | 2014-12-03 | 上海空间电源研究所 | Reliability evaluation method for long-service-life and high-reliability electronic product |
| CN105572498A (en) * | 2015-12-11 | 2016-05-11 | 中国航空工业集团公司西安飞机设计研究所 | Reliability acceleration test method of electronic products |
| US20190138926A1 (en) * | 2017-12-22 | 2019-05-09 | Beihang University | Degradation modeling and lifetime prediction method considering effective shocks |
Non-Patent Citations (1)
| Title |
|---|
| 王彦霖等: "自然随机温度应力条件的加速退化模型研究", 《装备环境工程》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111307178A (en) * | 2020-03-17 | 2020-06-19 | 中国科学院微小卫星创新研究院 | Degradation test method of passive high-power single machine for navigation |
| CN111307178B (en) * | 2020-03-17 | 2022-02-15 | 中国科学院微小卫星创新研究院 | Degradation test method of passive high-power single machine for navigation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110580329B (en) | 2023-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101746892B1 (en) | Semiconductor device, detection method, and program | |
| Zhou et al. | Exponential dispersion process for degradation analysis | |
| US8671315B2 (en) | Prognostic analysis system and methods of operation | |
| CA2604118A1 (en) | A system and method for real-time prognostics analysis and residual life assessment of machine components | |
| CN109030548B (en) | Polymer material thermal aging life evaluation method based on activation energy variation | |
| CN102590659A (en) | Method for evaluating storage life of capacitor by using acceleration tests | |
| CN110580329A (en) | Method for calculating performance degradation acceleration factor of electronic product | |
| CN115962797B (en) | Sensor reliability test method and system based on temperature stress | |
| US20030233624A1 (en) | Method for predicting the degradation of an integrated circuit performance due to negative bias temperature instability | |
| JP2005519300A (en) | Method for determining the elastoplastic behavior of a component made of anisotropic material and method of using this method | |
| US20120283981A1 (en) | Test pattern generation for semiconductor integrated circuit | |
| US20080060428A1 (en) | Method for Ascertaining Information About A Device Exposed To A Temperature | |
| CN113792446B (en) | Creep fatigue residual life assessment method based on crystal plasticity theory | |
| JPH06222053A (en) | Deterioration diagnostic method for ferrite based heat-resistant steel | |
| CN111680418A (en) | Acceleration factor calculation method based on temperature change in thermal cycle | |
| CN113702204B (en) | Prediction method and system for advanced high-temperature alloy endurance strength for high-parameter power station | |
| Xu et al. | Consistency check of degradation mechanism between natural storage and enhancement test for missile servo system | |
| CN114943160B (en) | Method for obtaining circulator/isolator activation energy and service life under non-failure data | |
| Diaz-Fortuny et al. | Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology | |
| CN117093821B (en) | Energy efficiency and water efficiency measuring system and method for washing machine | |
| Rodríguez-Picón et al. | A study of the inverse gaussian process with hazard rate functions-based drifts applied to degradation modelling | |
| JPH07128328A (en) | Method for predicting deterioration and residual life of metallic material | |
| CN116582102B (en) | Method for improving packaging technology of quartz crystal resonator | |
| Armagan et al. | Knowledge Based Qualification for Thermal Interface Material Reliability | |
| CN117685898B (en) | Data processing method and device for in-situ detection of curing and forming of composite material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |