CN110568554A - Optical chip for realizing PAM4 code by using single-light-source double-NRZ modulation - Google Patents
Optical chip for realizing PAM4 code by using single-light-source double-NRZ modulation Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 205
- 230000008878 coupling Effects 0.000 claims abstract description 29
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 29
- 230000008859 change Effects 0.000 claims abstract description 4
- 239000002131 composite material Substances 0.000 claims description 21
- 230000003068 static effect Effects 0.000 claims description 19
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims 8
- 230000010354 integration Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 7
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
- H04B10/54—Intensity modulation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Abstract
the invention relates to an optical chip for realizing PAM4 code by single-light-source double-NRZ modulation, which comprises an input mode field coupling optical waveguide, a wave-splitting non-equal-division Y-branch optical waveguide, an NRZ component capable of generating NRZ signals, a wave-combining high-low-order wave-combining equal-division Y-branch optical waveguide and an output mode field coupling optical waveguide, which are sequentially connected and mutually in optical conduction and are coupled with a light source; the NRZ component comprises a high-order MZ type interference amplitude modulator and a low-order MZ type interference amplitude modulator, wherein the two modulators respectively comprise a splitting Y-branch optical waveguide for splitting waves, two electro-optic modulation optical waveguides serving as differential electro-optic phase modulation arms, a splitting Y-branch optical waveguide for combining waves, and a radio frequency control electrode which is arranged on each electro-optic modulation optical waveguide and is connected with an external radio frequency signal source and used for controlling phase change. The invention can realize the PAM4 modulation code pattern only by one laser source, has simpler realization method, lower cost, volume which can be reduced by ten to one hundred times, greatly improved integration level and wider application range.
Description
Technical Field
The invention relates to the field of optical communication, in particular to an optical chip which is small in size, simple in implementation mode and high in integration level and realizes PAM4 code by using single-light-source double-NRZ modulation.
Background
The coming of the 5G era brings a demand for higher network transmission rate, the system capacity requirement is higher and higher, a simple Non-Return to Zero (NRZ) system cannot meet the demand, and a 4-level Amplitude Modulation (PAM 4) code format is increasingly emphasized. The PAM4 modulation mode adopts 4 different signal levels for signal transmission, each symbol period can represent logic information (0, 1, 2, 3) of 2 bits, bandwidth utilization efficiency can be effectively improved, and meanwhile, the PAM4 adopts a high-order modulation format, so that the requirement on the performance of an optical device can be reduced, and a balance can be achieved among the performance, cost, power consumption and density of different application occasions. However, in the prior art, the PAM4 signal generation implementation manner is complex, the requirements on devices are high, dispersion is limited, the transmission distance is short, the bandwidth is severely limited, and the application range is limited.
Disclosure of Invention
Aiming at the existing defects, the invention provides the optical chip which is small in size, simple in implementation mode and high in integration level and realizes the PAM4 code by using the double NRZ modulation of a single light source.
The technical scheme adopted by the invention for solving the technical problems is as follows:
The optical waveguide comprises an unequal Y-branch optical waveguide, an NRZ component and a high-low composite wave equal-division Y-branch optical waveguide, wherein the unequal Y-branch optical waveguide is connected and communicated with a light source through an input mode field coupling optical waveguide and used for splitting waves, the NRZ component can generate an NRZ signal, and the high-low composite wave equal-division Y-branch optical waveguide is used for combining waves; the NRZ component comprises a high-order MZ type interference amplitude modulator and a low-order MZ type interference amplitude modulator, wherein the high-order MZ type interference amplitude modulator and the low-order MZ type interference amplitude modulator respectively comprise a splitting Y-branch optical waveguide for splitting waves, two electro-optic modulation optical waveguides used as differential electro-optic phase modulation arms and a splitting Y-branch optical waveguide for combining waves, the input end of each splitting Y-branch optical waveguide is correspondingly connected with the output end of a non-splitting Y-branch optical waveguide, the two output ends of each splitting Y-branch optical waveguide are correspondingly connected with the input ends of the two electro-optic modulation optical waveguides, the output ends of the two electro-optic modulation optical waveguides are correspondingly connected with the two input ends of a combining Y-branch optical waveguide for combining waves of the corresponding MZ type interference amplitude modulator, the output ends of the two combining Y-branch optical waveguides are correspondingly connected with the two input ends of a high-order Y-branch optical waveguide for combining waves, the output end of the high-low composite wave equal-division Y-branch optical waveguide is connected with an output mode field coupling optical waveguide; and radio frequency control electrodes which are used for controlling phase change and are connected with an external radio frequency signal source are arranged on the electro-optical modulation optical waveguides.
Preferably, the input mode field coupling optical waveguide, the non-equal splitting Y-branch optical waveguide, the high-low multiplexing equal splitting Y-branch optical waveguide, the splitting equal splitting Y-branch optical waveguide, the electro-optical modulation optical waveguide, the radio frequency control electrode, the multiplexing equal splitting Y-branch optical waveguide, and the output mode field coupling optical waveguide are integrated on the same optical chip.
Preferably, the input mode field coupling optical waveguide, the non-equal splitting Y-branch optical waveguide, the high-low combining equal splitting Y-branch optical waveguide, the splitting equal splitting Y-branch optical waveguide, the electro-optical modulation optical waveguide, the combining equal splitting Y-branch optical waveguide, and the output mode field coupling optical waveguide are integrally formed lithium niobate thin film optical waveguides.
Preferably, a first static bias electrode which is used for static compensation and can be electrically connected with an external direct current power supply is further arranged on a light path connected with each of the split Y-branch optical waveguides of the split wave and the split Y-branch optical waveguides of the combined wave.
Preferably, the light paths connected to the output ends of the two combined-wave equant Y-branch light waveguides and the input ends of the high-low combined-wave equant Y-branch light waveguides are respectively provided with a second static bias electrode for static compensation, and the second static bias electrode can be electrically connected with an external direct-current power supply.
Preferably, the rf control electrode of the high MZ-type interferometric amplitude modulator is a high rf electrode electrically connected to an external high rf signal source.
Preferably, the radio frequency control electrode of the low MZ type interferometric amplitude modulator is a low rf electrode electrically connectable to an external low rf signal source.
Preferably, the non-equally divided Y-branch optical waveguide is branched at a 2:1 ratio.
Preferably, the angle between the two branches of the non-equally-divided Y-branched optical waveguide is in the range of 0.001-10 °.
The invention has the beneficial effects that: the external continuous laser is introduced through the input mode field coupling optical waveguide and the unequal Y-branch waveguide, and respectively passes through the high-order MZ interference type amplitude modulator, the low-order MZ interference type amplitude modulator, the high-order and low-order composite waves and the equal Y-branch waveguide, and then is converged and output through the output mode field coupling optical waveguide to form a complete optical loop, and external two paths of radio frequency NRZ signals pass through the high-order MZ interference type amplitude modulator and the low-order MZ interference type amplitude modulator to realize PAM4 code type optical modulation.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
Part names and serial numbers in the figure: 1-input mode field coupling optical waveguide 2-non-equal Y-branch optical waveguide 3-high-low-order compound wave equal-branch optical waveguide 4-high-order MZ type interference amplitude modulator 40-equal-branch optical waveguide 41-equal-wave Y-branch optical waveguide 42-electro-optical modulation optical waveguide 5-low-order MZ type interference amplitude modulator 6-output mode field coupling optical waveguide 7-radio frequency control electrode 8-first static bias electrode 9-second static bias electrode.
Detailed Description
To more clearly illustrate the objects, technical solutions and advantages of the embodiments of the present invention, the present invention will be further described in detail with reference to the accompanying drawings and embodiments, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without inventive step, are within the scope of the present invention. In addition, directional terms used in the present invention, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", etc., refer to directions only as shown in the attached drawings, and are used for better and clearer explanation and understanding of the present invention, and do not indicate or imply orientation which the present invention must have, and thus, should not be construed as limiting the present invention.
The embodiment of the invention is shown in figure 1, an optical chip for realizing PAM4 code by single-light-source double-NRZ modulation comprises a non-equal-division Y-branch optical waveguide 2 which is connected and conducted with a light source through an input mode field coupling optical waveguide 1 and is used for wave division, an NRZ component which can generate NRZ signals and a high-low-order composite wave equal-division Y-branch optical waveguide 3 which is used for composite wave, wherein the non-equal-division Y-branch optical waveguide 2, the NRZ component and the high-low-order composite wave equal-division Y-branch optical waveguide 3 are sequentially connected and mutually conducted; the NRZ component comprises a high-order MZ type interference amplitude modulator 4 and a low-order MZ type interference amplitude modulator 5, a non-equal-division Y-branch optical waveguide 2 is used for wave division, namely the non-equal-division Y-branch optical waveguide 2 is provided with two input ends, the input ends are coupled with a single continuous laser light source through an input mode field coupling optical waveguide 1, the coupled light forms two unequal amplitude outputs in the non-equal-division Y-branch optical waveguide 2, the non-equal-division Y-branch optical waveguide 2 is preferably arranged in a branching mode according to a 2:1 ratio, when the included angle of the two branches is in the range of 0.001-10 degrees, the optical loss caused by the Y branch can be effectively reduced, the transmission efficiency and good mode separation of light are ensured, after the included angle of the two branches of the Y branch is determined, the 2:1 ratio can be arranged according to different modes such as optical power, the width of the optical waveguide, the transmission angle in the light transmission direction and the like, so that the high order output power is 2 times the low order output power. Meanwhile, the high-low composite wave equal-division Y-branch optical waveguide 3 is used for composite wave, that is, the high-low composite wave equal-division Y-branch optical waveguide has two input ends and one output end, the two input ends are correspondingly connected with the output ends of the two MZ type interference amplitude modulators and overlapped to form PAM4 modulation code type optical signals, and the output end of the high-low composite wave equal-division Y-branch optical waveguide 3 is modulated into PAM4 code type optical signals to be output. The high MZ type interferometric amplitude modulator 4 is composed of a high level differential electro-optic phase modulator, the low MZ type interferometric amplitude modulator 5 is composed of a low level differential electro-optic phase modulator, the electro-optic phase modulation has the characteristics of wide modulation bandwidth, low transmission loss, small chirp, low noise and the like, and has the advantages of increasing the dynamic demodulation range of the system and reducing the noise level of the detection signal, the high MZ type interferometric amplitude modulator 4 and the low MZ type interferometric amplitude modulator 5 both include a split-wave split-division Y-branch optical waveguide 40, two electro-optic modulation optical waveguides 42 as differential electro-optic phase modulation arms, and a combined-wave split-division Y-branch optical waveguide 41, the high MZ type interferometric amplitude modulator 4 is externally connected with a high-level input NRZ radio frequency signal to realize phase modulation on the light transmitted in the electro-optic modulation optical waveguides 42, and form a high MZ interferometric amplitude NRZ modulation signal light by the phase difference of the two electro-optic modulation optical waveguides 42, the low-order MZ-type interferometric amplitude modulator 5 is externally connected with a low-order input NRZ radio frequency signal to realize phase modulation on light transmitted in the electro-optic modulation optical waveguide 42, and forms low-order MZ-type interferometric amplitude NRZ modulation signal light through the phase difference between the two electro-optic modulation optical waveguides 42, the input end of each divided-wave equally-divided Y-branch optical waveguide 40 is correspondingly connected with the output end of the non-equally-divided Y-branch optical waveguide 2, the two output ends of each divided-wave equally-divided Y-branch optical waveguide 40 are correspondingly connected with the input ends of the two electro-optic modulation optical waveguides 42, the output ends of the two electro-optic modulation optical waveguides 42 are correspondingly connected with the two input ends of the equally-divided Y-branch optical waveguide 41 of the combined wave of the corresponding MZ-type interferometric amplitude modulator, the output ends of the two equally-divided Y-branch optical waveguides 41 of the combined wave are correspondingly connected with the two, the output end of the Y-branch optical waveguide 41 for equally dividing the high-low composite wave of the composite wave is connected with an output mode field coupling optical waveguide 6; thus, a complete optical path is formed, that is, light emitted by a single continuous laser light source enters through the input mode field coupling optical waveguide 1 and passes through the splitting of the unequal Y-branch optical waveguide 2, the high-order output of the unequal Y-branch optical waveguide 2 is connected with the input of the high-order MZ-type interferometric amplitude modulator 4, the output of the high-order MZ-type interferometric amplitude modulator 4 is connected with the high-order input of the high-order and low-order combined wave equal-division Y-branch optical waveguide 3, the low-order output of the unequal Y-branch optical waveguide 2 is connected with the input of the low-order MZ-type interferometric amplitude modulator 5, the output of the low-order MZ-type interferometric amplitude modulator 5 is connected with the low-order input of the high-order and low-order combined wave equal-division Y-branch optical waveguide 3, an optical signal of PAM4 code pattern is formed after passing through the high-order and low-order combined wave equal-division Y-branch optical waveguide 3, and finally is. The electro-optical modulation optical waveguides 42 are all provided with radio frequency control electrodes 7 which are used for controlling phase change and connected with an external radio frequency signal source, so that external continuous laser passes through the input mode field coupling optical waveguide 1 and the unequal Y-branch optical waveguides 2, is modulated by the high-order MZ-type interference amplitude modulator 4 and the low-order MZ-type interference amplitude modulator 5, is converged by the high-order and low-order composite wave equal Y-branch optical waveguides 3, and is output through the output mode field coupling optical waveguide 6, and a complete optical loop is formed. The PAM4 code type optical modulation is realized by the two external radio frequency NRZ signals through the high-order MZ type interference amplitude modulator 4 and the low-order MZ type interference amplitude modulator 5. In the case of a 2:1 ratio of input laser light distribution, the electrical signal input at the rf control electrode 7 and the light amplitude output are as follows:
Watch 1
Where C is the input optical power corresponding to the input signal value of 1.
Further improvement, as shown in fig. 1, in order to make the light transmission smoother and avoid interference, the input mode field coupling optical waveguide 1, the unequal Y-branch optical waveguide 2, the high-low combined wave equal-division Y-branch optical waveguide 3, the split equal Y-branch optical waveguide 40, the electro-optical modulation optical waveguide 42, the radio frequency control electrode 7, the combined equal Y-branch optical waveguide 41, and the output mode field coupling optical waveguide 6 are integrated on the same optical chip, wherein the input mode field coupling optical waveguide 1, the unequal Y-branch optical waveguide 2, the high-low combined wave equal-division Y-branch optical waveguide 3, the split equal Y-branch optical waveguide 40, the combined equal Y-branch optical waveguide 41, and the output mode field coupling optical waveguide 6 are integrally formed on the same substrate and can be optically conductive, the structure of the niobic acid is simplified, and the substrate can be different crystal materials, such as glass, lithium ion, lithium, The multilayer composite material such as lithium tantalate, gallium arsenide and monocrystalline silicon, preferably thin-film lithium niobate with good electro-optical characteristics is used as a substrate and is made into a lithium niobate thin-film optical waveguide, so that the volume of the multilayer composite material is reduced, and the production of miniaturized products is facilitated. The radio frequency control electrode 7 is isolated from the corresponding electro-optical modulation optical waveguide 42 by the insulating layers arranged on the upper and lower surfaces of the optical waveguide, the electrode direction is parallel to the electro-optical modulation optical waveguide 42, and the electrode and the electro-optical modulation optical waveguide 42 are integrated on the same optical chip during manufacturing. When light passes through the electro-optical modulation optical waveguide 42, the phase amplitude of the light after passing through the electro-optical modulation optical waveguide 42 is changed through the modulation of the radio frequency control electrode 7, and two high-level electro-optical modulation optical waveguides 42 are converged, coherently superposed through the wave-combined equant Y-branch optical waveguide 41 to form a high-level NRZ amplitude modulation signal; the two electro-optical modulation optical waveguides 42 at the low position are converged, coherently superposed through the halved Y-branch optical waveguide 41 of the combined wave to form an NRZ amplitude modulation signal at the low position, and finally output through the output mode field coupling optical waveguide 6 after passing through the combined wave of the high-low position combined wave halved Y-branch optical waveguide 3, so that the output of the PAM4 signal is realized.
In a further improvement, as shown in fig. 1, a first static bias electrode 8 for static compensation and electrically connected to an external dc power supply is further disposed on the optical path connecting each of the divided Y-branch optical waveguides 40 and the combined Y-branch optical waveguide 41, so that a slight deviation of refractive index caused by the electro-optical modulation optical waveguide 42 during production can be solved, and the deviation can be eliminated by applying a dc bias to the bias electrode. In order to obtain an accurate PAM4 signal, second static bias electrodes 9 which are used for static compensation and can be electrically connected with an external direct-current power supply are arranged on light paths connected with output ends of the two equal-division Y-branch optical waveguides 41 of the combined wave and input ends of the high-low-order combined-wave equal-division Y-branch optical waveguides 3, phase balance of high-low-order modulation output is adjusted, signal deviation caused by uneven materials or small refractive index deviation caused in production is further eliminated, and a generated PAM4 code-type signal is more accurate. The external dc power supplies on the first static bias electrode 8 and the second static bias electrode 9 are independently adjusted dc power supplies, and can be independently adjusted without affecting each other. The independently arranged static bias electrodes can conveniently realize the static fine adjustment of high and low signal phases on the optical path and ensure good extinction ratio.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (9)
1. An optical chip for realizing PAM4 code by using single-light-source double-NRZ modulation is characterized in that: the optical waveguide comprises an unequal Y-branch optical waveguide, an NRZ component and a high-low composite wave equal-division Y-branch optical waveguide, wherein the unequal Y-branch optical waveguide is connected and communicated with a light source through an input mode field coupling optical waveguide and used for splitting waves, the NRZ component can generate an NRZ signal, and the high-low composite wave equal-division Y-branch optical waveguide is used for combining waves; the NRZ component comprises a high-order MZ type interference amplitude modulator and a low-order MZ type interference amplitude modulator, wherein the high-order MZ type interference amplitude modulator and the low-order MZ type interference amplitude modulator respectively comprise a splitting Y-branch optical waveguide for splitting waves, two electro-optic modulation optical waveguides used as differential electro-optic phase modulation arms and a splitting Y-branch optical waveguide for combining waves, the input end of each splitting Y-branch optical waveguide is correspondingly connected with the output end of a non-splitting Y-branch optical waveguide, the two output ends of each splitting Y-branch optical waveguide are correspondingly connected with the input ends of the two electro-optic modulation optical waveguides, the output ends of the two electro-optic modulation optical waveguides are correspondingly connected with the two input ends of a combining Y-branch optical waveguide for combining waves of the corresponding MZ type interference amplitude modulator, the output ends of the two combining Y-branch optical waveguides are correspondingly connected with the two input ends of a high-order Y-branch optical waveguide for combining waves, the output end of the high-low composite wave equal-division Y-branch optical waveguide is connected with an output mode field coupling optical waveguide; and radio frequency control electrodes which are used for controlling phase change and are connected with an external radio frequency signal source are arranged on the electro-optical modulation optical waveguides.
2. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: the input mode field coupling optical waveguide, the non-equal division Y-branch optical waveguide, the high-low composite wave equal division Y-branch optical waveguide, the wave division equal division Y-branch optical waveguide, the electro-optical modulation optical waveguide, the radio frequency control electrode, the composite wave equal division Y-branch optical waveguide and the output mode field coupling optical waveguide are integrated on the same optical chip.
3. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: the input mode field coupling optical waveguide, the non-equal division Y-branch optical waveguide, the high-low composite wave equal division Y-branch optical waveguide, the wave division equal division Y-branch optical waveguide, the electro-optical modulation optical waveguide, the composite wave equal division Y-branch optical waveguide and the output mode field coupling optical waveguide are lithium niobate thin film optical waveguides which are integrally formed.
4. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: and a first static bias electrode which is used for static compensation and can be electrically connected with an external direct-current power supply is further arranged on a light path connected with each of the wave-splitting Y-branch optical waveguides and the wave-combining Y-branch optical waveguides.
5. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: and second static bias electrodes which are used for static compensation and can be electrically connected with an external direct-current power supply are arranged on light paths connected with the output ends of the two wave-combining equal-division Y-branch optical waveguides and the input ends of the high-low wave-combining equal-division Y-branch optical waveguides.
6. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: the radio frequency control electrode arranged in the high-order MZ type interference amplitude modulator is a high-order radio frequency electrode which can be electrically connected with an external high-order radio frequency signal source.
7. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: the radio frequency control electrode arranged in the low MZ type interference amplitude modulator is a low radio frequency electrode which can be electrically connected with an external low radio frequency signal source.
8. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: the non-equally divided Y-branch optical waveguide is branched in a 2:1 ratio.
9. The optical chip for realizing PAM4 code using single light source dual NRZ modulation as claimed in claim 1, wherein: the angle range of the included angle of the two branches of the non-equal Y-branch optical waveguide is 0.001-10 degrees.
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