CN110563348B - Light-emitting element, high-energy ion radiation method and polishing method of light-emitting element - Google Patents
Light-emitting element, high-energy ion radiation method and polishing method of light-emitting element Download PDFInfo
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- CN110563348B CN110563348B CN201810576632.0A CN201810576632A CN110563348B CN 110563348 B CN110563348 B CN 110563348B CN 201810576632 A CN201810576632 A CN 201810576632A CN 110563348 B CN110563348 B CN 110563348B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
Abstract
The polishing method of the light-emitting element of the present invention irradiates the light-emitting element with high-energy ions with an energy gradient increasing order, so that the a phase of the light-emitting element is uniformly damaged in a predetermined depth range below the surface of the light-emitting element until the mohs hardness of the a phase is substantially the same as the mohs hardness of the Y phase, and then polishes the irradiated light-emitting element to the depth to obtain a flat surface. The concave-convex fluctuant surface of micron grade caused by different hardness and grinding speed between different phases can be avoided, so that the reflecting layer adhered on the surface of the concave-convex fluctuant surface is firmer and is not easy to fall off.
Description
Technical Field
The invention belongs to the technical field of luminescent materials, and particularly relates to a luminescent element for a luminescent device, a high-energy ion radiation method and a polishing method of the luminescent element.
Background
At present, there is a light emitting device, such as a luminescent ceramic/luminescent glass, obtained by mixing and sintering a phosphor powder with a glass powder or a ceramic powder. The luminescent ceramic/luminescent glass forms a luminescent device by adhering a layer of reflecting layer and a heat-conducting supporting device on one side back to exciting light, and is used for converting the exciting light into stimulated light with a preset wavelength. Since the mohs hardness of the phase formed by sintering the fluorescent powder and the phase formed by sintering the glass powder or the ceramic powder are different, the grinding rate is different, so that a concave-convex surface is formed when the light-emitting element is polished, the concave-convex surface fluctuates at a micron level, and the concave-convex surface is covered with the reflecting layer, so that the reflecting layer is easy to fall off.
Therefore, in view of the above-mentioned disadvantages, it is necessary to provide a new high-energy ion irradiation method and polishing method for a light emitting element of a laser light source to solve the problems of high cost and insufficient performance of the existing polishing method.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a light-emitting element, and a high-energy ion radiation method and a polishing method of the light-emitting element, so as to solve the problem that the reflective layer is not firmly combined and is easy to fall off because a micro-scale fluctuated concave-convex surface is formed during polishing in the prior art and the reflective layer is covered on the concave-convex surface.
Specifically, the light-emitting element is formed by sintering at least two kinds of raw materials including an A-phase raw material and a Y-phase raw material to form a complex phase structure including at least two kinds of A-phase and Y-phase raw materials, wherein the Mohs hardness of the A-phase is higher than that of the Y-phase, the DPA value of the A-phase is higher than that of the Y-phase, and the Mohs hardness of the A-phase is reduced to be substantially the same as that of the Y-phase after damage caused by ion radiation.
Preferably, the light emitting element is Y 3 Al 5 O 12 :Ce 3+ Phosphor and Al 2 O 3 Sintering particles to obtain a sheet-like wavelength conversion layer, wherein the phase A is Al 2 O 3 Phase Y is phase Y 3 Al 5 O 12 :Ce 3+ And (4) phase(s).
Preferably, the thickness of the wavelength conversion layer is 350 μm to 450 μm.
In order to solve the above problems, the present invention further provides a high energy ion irradiation method for a light emitting device, wherein the light emitting device has a complex phase structure as described above, and the light emitting device is irradiated with high energy ions with an increasing energy gradient, so that the a phase of the light emitting device is uniformly damaged in a predetermined depth range below the surface of the light emitting device until the mohs hardness of the a phase is substantially the same as the mohs hardness of the Y phase.
Preferably, the high-energy ions are C ions or N ions with energy of 70MeV-80 MeV.
Preferably, the difference between the Mohs hardness of the A phase and the Mohs hardness of the Y phase is not more than 0.5.
Preferably, the dosage of the C ion radiation is 1 x 10 15 ions/cm 2 Radiation rate of 1X 10 13 ions/cm 2 S, radiation energy 70 MeV.
Preferably, after the first irradiation, the irradiation energy per irradiation is increased by a tolerance of 1 MeV.
In order to solve the above problems, the present invention also provides a polishing method of a light emitting element including the high energy ion irradiation method as described above, comprising the steps of:
step S1: providing a light-emitting element with a complex phase structure, adhering the light-emitting element to a sample table of an ion implanter, and exposing a polished surface;
step S2: carrying out high-energy ion radiation on the polished surface of the light-emitting element, modifying radiation parameters to carry out next radiation without taking out a sample after each energy radiation is finished, and repeating for multiple times until uniform damage is generated in a preset depth range;
step S3: polishing to the predetermined depth range to obtain a flat surface.
Preferably, in step S1, the light emitting element is bonded by a conductive tape or an adhesive, and the bonding area is smaller than the surface area of the light emitting element.
Preferably, after step S2 or after step S3, the method further includes step S4: the light emitting element was taken out, and the conductive tape or adhesive was removed with acetone.
Preferably, the predetermined depth range in step S2 is 100 μm to 145 μm.
Compared with the prior art, the invention has the following beneficial effects: the light-emitting element, the high-energy ion radiation method and the polishing method of the invention use high-energy ions to carry out the radiation with the energy gradient increasing on the light-emitting element with the complex phase structure, so that the phase with higher Mohs hardness in the light-emitting element generates uniform damage in a preset depth range below the surface of the light-emitting element, thereby reducing the Mohs hardness of the phase to be approximately the same as the Mohs hardness of another phase in the light-emitting element, and then the light-emitting element after radiation is polished to the depth to obtain a flat surface. The concave-convex fluctuant surface of micron grade caused by different hardness and grinding speed between different phases can be avoided, so that the reflecting layer adhered on the surface of the concave-convex fluctuant surface is firmer and is not easy to fall off.
The invention will be further explained with reference to the drawings and the embodiments.
Drawings
FIG. 1 is a schematic view showing a surface structure of a light-emitting element of the present invention directly after polishing;
FIG. 2 shows a graph of Y after multiple irradiations of a light-emitting element according to the present invention 3 Al 5 O 12 :Ce 3+ A schematic of the extent of damage of the phases;
FIG. 3 shows a light-emitting device according to the present inventionAfter multiple irradiation of Al 2 O 3 A schematic of the extent of damage of the phases;
FIG. 4 is a schematic diagram showing the degree of damage between different phases of a light-emitting element according to the present invention;
FIG. 5 is a schematic diagram showing the degree of damage to different phases after irradiation after polishing in advance of the light-emitting element of the present invention;
fig. 6 is a schematic flow chart of a polishing method of a light-emitting element of the invention.
Detailed Description
The present invention provides a novel method for polishing a light-emitting element for a light-emitting device, wherein the light-emitting element of the present invention is a luminescent ceramic or a luminescent glass, and a flat surface can be formed after the polishing method of the present invention is performed on the light-emitting element, and then a reflective layer or the like can be attached to the surface to further form the light-emitting device. The polishing method can effectively solve the problem that the reflecting layer is not firmly combined and is easy to fall off because the concave-convex surface with micron-scale fluctuation is formed during polishing in the prior art and the reflecting layer is covered on the concave-convex surface.
The polishing method of the present invention is applied to a light-emitting element formed by sintering at least two raw materials including an a-phase raw material and a Y-phase raw material, the light-emitting element including at least two phases of an a-phase and a Y-phase, constituting a complex phase structure. Wherein, the Y phase and the A phase have different Mohs hardness, the wear resistance and the damage resistance are different, in particular, the Mohs hardness of the A phase is larger than that of the Y phase. And the DPA value of the a phase is greater than that of the Y phase, the mohs hardness thereof changes after being damaged by the ion radiation, and in particular, the mohs hardness thereof decreases. It should be noted that DPA (displacements per atom) refers to the number of times each atom in the irradiated luminescent ceramic is displaced on average, and indicates the degree of damage, and the larger the DPA value, the more serious the damage.
Specifically, in this embodiment, the Y-phase raw material is Y 3 Al 5 O 12 :Ce 3+ Fluorescent powder, the A phase raw material is Al 2 O 3 Particles of which the A phase is Al 2 O 3 Phase Y is phase Y 3 Al 5 O 12 :Ce 3+ And (4) phase. Of course, the polishing method of the invention is also suitable for other polishing methodsThe light-emitting element having a phase structure is not limited to the materials and structures described in this embodiment, and examples thereof include: the raw material of Y phase is LuAG and Ce 3+ Fluorescent powder, the A phase raw material is glass powder, the formed A phase is glass phase, and the Y phase is LuAG: Ce 3+ And (4) phase(s).
This embodiment mode adopts Y 3 Al 5 O 12 :Ce 3+ Phosphor and Al 2 O 3 The particles being sintered to form a sheet-like wavelength-converting layer, i.e. a light-emitting element, in which Y 3 Al 5 O 12 :Ce 3+ The fluorescent powder can be purchased commercially directly or by weighing a certain amount of Y 2 O 3 (purity 99.99%) and Al 2 O 3 (purity 99.99%) CeO 2 Mixing and sintering. The light-emitting element is cut into a disk shape having a thickness of 350 μm to 450 μm, preferably 400 μm. As shown in FIG. 1, the surface roughness of the light-emitting element after direct polishing is about 20 μm, wherein the protruding part is Al 2 O 3 Phase, the depressed part is Y 3 Al 5 O 12 :Ce 3+ Phase due to Al 2 O 3 Has a Mohs hardness of more than Y 3 Al 5 O 12 :Ce 3+ Mohs hardness of (a) to result in Al 2 O 3 Wear rate ratio Y of 3 Al 5 O 12 :Ce 3+ Low, so the polished surface is concave-convex.
As shown in fig. 2 to 4, the present invention provides an irradiation method for performing an energy gradient increment on the light emitting element using high energy ions and a polishing method using the same, which causes a uniform damage of a phase a of the light emitting element in a predetermined depth range below a surface of the light emitting element until a mohs hardness of the phase a is substantially the same as a mohs hardness of a phase Y, and then polishes the irradiated light emitting element to the depth to obtain a flat surface. Wherein the high-energy ions are C ions or N ions with energy of 70MeV-80 MeV. In the present invention, the Mohs hardness of the A phase is substantially the same as that of the Y phase, and it is understood that the difference between the Mohs hardness of the A phase and that of the Y phase is not more than 0.5, preferably not more than 0.3.
Specifically, taking this embodiment as an example, the polishing method of the present invention comprises the steps of:
step S1: the light emitting element is adhered to a sample stage of an ion implanter with the polishing surface exposed by a conductive tape or adhesive. Specifically, a double-sided carbon conductive adhesive tape or silver adhesive is coated on one side, which is away from the polishing surface, wherein the bonding area formed by the double-sided carbon conductive adhesive tape or the silver adhesive is smaller than the surface area of the surface to be bonded of the light-emitting element, so that the adhesive is not exposed, and sputtering pollution caused by ions hitting the adhesive tape is prevented.
Step S2: and (3) carrying out high-energy ion radiation on the polished surface of the light-emitting element, modifying radiation parameters to carry out next radiation without taking out a sample after each energy radiation is finished, and repeating for multiple times until uniform damage is generated in a preset depth range.
The energetic ions can adopt non-gaseous elements with low chemical activity in the periodic table of elements, such as C (carbon), P (phosphorus), B (boron), N (nitrogen) and the like. Different radiation elements have different atomic weights and electronic structures, and the damage depth distribution and the damage degree generated in the base material are different, so that the energy, the type, the dose and the like of radiation particles can be set according to actual conditions. In the case of a complex phase luminescent ceramic, the polishing depth of the complex phase luminescent ceramic is matched to the depth of the radiation damage in the luminescent ceramic. Preferably, C ions or N ions can be used, and in the present embodiment, C ion radiation is used at a dose of 1X 10 15 ions/cm 2 Radiation rate of 1X 10 13 ions/cm 2 S, the radiation energy at the first irradiation is 70MeV, after the first irradiation, the dose and implantation rate of each subsequent irradiation are kept constant while the radiation energy is increased by 1MeV to obtain Y after 11 irradiations as shown in FIG. 2 3 Al 5 O 12 :Ce 3+ Graph of the degree of phase damage, and Al irradiated 11 times as shown in FIG. 3 2 O 3 The graph of the degree of phase damage shows the depth below the surface of the luminescent ceramic on the X-axis and the degree of damage caused by C-ion irradiation on the Y-axis. In fig. 2 and 3, 11 single peak patterns from left to right are single-lesion patterns, respectively. The invention adopts a plurality of energiesThe reason for the combination of the multiple irradiation of the amount is that a single energy irradiation can only generate a gaussian distribution of the damage, such as the single damage pattern in fig. 2 and 3, and the damage distribution generated by each energy irradiation is a gaussian distribution having a single peak in the respective depth range, and cannot generate a uniform damage in a predetermined depth. The present invention adopts a plurality of irradiation methods with different energies to generate uniform damage distribution in a predetermined depth interval, referring to the total damage shown in fig. 2 and 3. FIG. 2 shows Y in a depth range of 125 μm to 165 μm below the surface of the light emitting element 3 Al 5 O 12 :Ce 3+ The damage caused by the phase formation is relatively uniform, and FIG. 3 shows that Al is present in a depth range of 105 μm to 145 μm below the surface of the light-emitting element 2 O 3 Relatively uniform damage is formed.
FIG. 4 is Y 3 Al 5 O 12 :Ce 3+ Phase and Al 2 O 3 Compared with the total damage after the C ion irradiation under the same conditions. In a visible, Y 3 Al 5 O 12 :Ce 3+ Greater than Al 2 O 3 Depth of damage in (1), Y 3 Al 5 O 12 :Ce 3+ The damage in phase is distributed below the surface at 125-165 μm, Al 2 O 3 The damage in the phase is distributed in the range of 105 μm to 145 μm below the surface, and the radiation under the same conditions is in Al 2 O 3 Damage in phase greater than in Y 3 Al 5 O 12 :Ce 3+ Damage generated in the phase.
The inventors performed polishing of the light emitting element in advance, and then performed high-energy ion irradiation. The former has a lower wear rate than the latter due to the difference in wear rates between the Y phase and the A phase, and specifically in this embodiment, the Y phase is Y 3 Al 5 O 12 :Ce 3+ Phase A is Al 2 O 3 Phase, surface formed after polishing as shown in FIG. 1, Y 3 Al 5 O 12 :Ce 3+ The surface of the phase is lower than Al 2 O 3 The surface roughness of the phase was 20 μm. Subjecting the polished light-emitting element to high-energy ion irradiation to form a surface roughness according to the method of step S2After considering the unevenness, as shown in FIG. 5, the surface of the A phase is used as the surface of the light emitting element, and Y is 3 Al 5 O 12 :Ce 3+ The uniform damage of the phase occurs in a depth range of 145 μm to 185 μm below the surface, Al 2 O 3 Homogeneous damage of the phases still occurs 105 μm to 145 μm below the surface. Therefore, it is understood that, regardless of whether the light emitting element is directly subjected to high-energy ion irradiation plural times or is subjected to high-energy ion irradiation plural times after being subjected to a polishing process, the a phase having a higher mohs hardness is uniformly damaged in a more stable depth range, which is the predetermined depth range according to the present invention. In the above, the a phase is uniformly damaged in the predetermined depth range after the irradiation of the plurality of times in step S2, and it is only necessary to ensure that the damage can cause the mohs hardness of the a phase to be reduced to approximately the same as the mohs hardness of the Y phase, so as to facilitate the subsequent polishing.
The inventor experimentally found that Al is present under the above experimental parameters 2 O 3 Dpa value of phase 16 indicates Al 2 O 3 The phase is impacted 16 times per atom on average from the original position, so high an impact rate is sufficient to cause Al 2 O 3 And (4) amorphization. Amorphized Al 2 O 3 The hardness decreases and the wear rate increases. Under this damage, Al 2 O 3 The Mohs hardness of the alloy is changed from 9 to 8.5 and is approximately equal to Y 3 Al 5 O 12 :Ce 3+ The Mohs hardness of (C). I.e., at a depth of 105 μm to 145 μm, the polishing rates are the same. Thus, in a subsequent polishing process, polishing the irradiated sample within the depth range results in a flat surface.
Step S3: the light emitting element subjected to the high energy ion irradiation is polished to the above-mentioned predetermined depth range, thereby obtaining a flat surface. To have Y 3 Al 5 O 12 :Ce 3+ Phase and Al 2 O 3 The predetermined depth is 105 μm to 145 μm, taking as an example a luminescent ceramic of phase.
Step S4: the light emitting element was taken out, and the conductive tape or the adhesive was removed with acetone.
Through the steps, the light-emitting element with the smooth and flat surface can be obtained, and then a light-reflecting layer can be attached to the polished surface of the light-emitting element for further processing, so that the wavelength conversion device can be processed.
Compared with the prior art, the invention has the following beneficial effects: the polishing method of the light emitting element of the present invention irradiates a light emitting element having a complex phase structure with high energy ions with an energy gradient increasing progressively, so that a phase having a higher mohs hardness in the light emitting element generates uniform damage in a predetermined depth range below the surface of the light emitting element, thereby reducing the mohs hardness thereof to be substantially the same as the mohs hardness of another phase in the light emitting element, and then polishes the irradiated light emitting element to the depth to obtain a flat surface. The concave-convex fluctuant surface of micron grade caused by different hardness and grinding speed between different phases can be avoided, so that the reflecting layer adhered on the surface of the concave-convex fluctuant surface is firmer and is not easy to fall off.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (11)
1. A light-emitting element, wherein the light-emitting element is formed by sintering at least two kinds of raw materials of an A-phase raw material and a Y-phase raw material, and has a complex phase structure including at least two phases of the A-phase and the Y-phase, wherein the Mohs hardness of the A-phase is higher than that of the Y-phase, the DPA value of the A-phase is higher than that of the Y-phase, and the Mohs hardness of the A-phase is reduced to a value not more than 0.5 from the Mohs hardness of the Y-phase after being damaged by multiple times of ionizing radiation with different irradiation parameters.
2. The light-emitting element according to claim 1, wherein the light-emitting element is Y 3 Al 5 O 12 :Ce 3+ Phosphor and Al 2 O 3 Sintering particles to obtain a sheet-like wavelength conversion layer, wherein the phase A is Al 2 O 3 Phase Y is phase Y 3 Al 5 O 12 :Ce 3+ And (4) phase(s).
3. The light-emitting element according to claim 2, wherein a thickness of the wavelength conversion layer is 350 μm to 450 μm.
4. A high-energy ion irradiation method for a light-emitting element, wherein the light-emitting element is the light-emitting element according to any one of claims 1 to 3, and the light-emitting element is irradiated with high-energy ions with different irradiation parameters a plurality of times, so that a phase a of the light-emitting element is uniformly damaged in a predetermined depth range below the surface of the light-emitting element until the difference between the mohs hardness of the phase a and the mohs hardness of the phase Y is not more than 0.5.
5. The method for irradiating high-energy ions of a light-emitting element according to claim 4, wherein said high-energy ions are C ions or N ions having an energy of 70MeV to 80 MeV.
6. The method for irradiating high-energy ion of light-emitting element according to claim 5, wherein said dose of C ion irradiation is 1 x 10 15 ions/cm 2 Radiation rate of 1X 10 13 ions/cm 2 S, radiation energy 70 MeV.
7. The method for irradiating high-energy ions onto a light-emitting element according to claim 6, wherein the irradiation energy per one irradiation is increased to a tolerance of 1MeV after the first irradiation.
8. A polishing method of a light emitting element comprising the high energy ion irradiation method according to any one of claims 4 to 7, characterized by comprising the steps of:
step S1: providing a light-emitting element with a complex phase structure, adhering the light-emitting element to a sample table of an ion implanter, and exposing a polished surface;
step S2: carrying out high-energy ion radiation on the polished surface of the light-emitting element, modifying radiation parameters to carry out next radiation without taking out a sample after each energy radiation is finished, and repeating for multiple times until uniform damage is generated in a preset depth range;
step S3: polishing to the predetermined depth range to obtain a flat surface.
9. The method for polishing a light-emitting element according to claim 8, wherein the step S1 is bonding the light-emitting element by a conductive tape or an adhesive, and the bonding area is smaller than the surface area of the light-emitting element.
10. The polishing method for a light emitting element according to claim 8, further comprising step S4 after step S2 or after step S3: the light emitting element was taken out, and the conductive tape or adhesive was removed with acetone.
11. The polishing method for a light-emitting element according to claim 8, wherein the predetermined depth in step S2 is in a range of 100 μm to 145 μm.
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| CN201810576632.0A CN110563348B (en) | 2018-06-06 | 2018-06-06 | Light-emitting element, high-energy ion radiation method and polishing method of light-emitting element |
| PCT/CN2019/081652 WO2019233174A1 (en) | 2018-06-06 | 2019-04-08 | Light-emitting element and energetic particle radiation method and polishing method for light-emitting element |
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| CN201810576632.0A CN110563348B (en) | 2018-06-06 | 2018-06-06 | Light-emitting element, high-energy ion radiation method and polishing method of light-emitting element |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5154023A (en) * | 1991-06-11 | 1992-10-13 | Spire Corporation | Polishing process for refractory materials |
| CN103890982A (en) * | 2011-10-18 | 2014-06-25 | 株式会社村田制作所 | Light-emitting element, method for producing same, and light-emitting device |
| CN107540369A (en) * | 2017-02-28 | 2018-01-05 | 江苏罗化新材料有限公司 | The preparation method of luminescent ceramic, LED encapsulation structure and luminescent ceramic |
| CN107540368A (en) * | 2017-02-28 | 2018-01-05 | 江苏罗化新材料有限公司 | The preparation method and LED module of complex phase translucent fluorescent ceramics |
| CN107797312A (en) * | 2016-09-07 | 2018-03-13 | 深圳市光峰光电技术有限公司 | Ceramic composite and preparation method thereof, wavelength shifter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100399540C (en) * | 2005-08-30 | 2008-07-02 | 中美矽晶制品股份有限公司 | Technology for making composite crystal structure |
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- 2018-06-06 CN CN201810576632.0A patent/CN110563348B/en active Active
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- 2019-04-08 WO PCT/CN2019/081652 patent/WO2019233174A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5154023A (en) * | 1991-06-11 | 1992-10-13 | Spire Corporation | Polishing process for refractory materials |
| CN103890982A (en) * | 2011-10-18 | 2014-06-25 | 株式会社村田制作所 | Light-emitting element, method for producing same, and light-emitting device |
| CN107797312A (en) * | 2016-09-07 | 2018-03-13 | 深圳市光峰光电技术有限公司 | Ceramic composite and preparation method thereof, wavelength shifter |
| CN107540369A (en) * | 2017-02-28 | 2018-01-05 | 江苏罗化新材料有限公司 | The preparation method of luminescent ceramic, LED encapsulation structure and luminescent ceramic |
| CN107540368A (en) * | 2017-02-28 | 2018-01-05 | 江苏罗化新材料有限公司 | The preparation method and LED module of complex phase translucent fluorescent ceramics |
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| WO2019233174A1 (en) | 2019-12-12 |
| CN110563348A (en) | 2019-12-13 |
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