CN110554032A - optical sensor - Google Patents

optical sensor Download PDF

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Publication number
CN110554032A
CN110554032A CN201910028174.1A CN201910028174A CN110554032A CN 110554032 A CN110554032 A CN 110554032A CN 201910028174 A CN201910028174 A CN 201910028174A CN 110554032 A CN110554032 A CN 110554032A
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light
unit
optical sensor
transmissive electrode
sensing
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CN110554032B (en
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冉晓雯
孟心飞
林敬富
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National Yang Ming Chiao Tung University NYCU
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National Chiao Tung University NCTU
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106General arrangement of respective parts
    • G01N2021/0112Apparatus in one mechanical, optical or electronic block

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

An optical sensor for sensing an object to be detected comprises a sensing unit for generating color change by interaction with the object to be detected, a first light transmission electrode unit positioned below the sensing unit, a light receiving unit positioned below the first light transmission electrode unit, a second light transmission electrode unit positioned below the light receiving unit and comprising a light transmission part and a light shielding part, and a light emitting unit positioned below the second light transmission electrode unit and used for emitting light towards the sensing unit. The invention not only can directly reflect whether the object to be detected exists, but also can reflect the concentration of the object to be detected through the current signal change caused by the light intensity change.

Description

Optical sensor
Technical Field
The present invention relates to a sensor, and more particularly, to an optical sensor.
Background
In the conventional harmful substance sensing film, after the harmful substance is sensed, the concentration of the harmful substance can be roughly confirmed by a colorimetric method. However, the method cannot know the exact concentration of the harmful substance, and even when the concentration of the harmful substance is too low, the comparison cannot be made, so that whether the harmful substance exists cannot be accurately confirmed. In addition, a spectroscopic instrument can be used to confirm the presence and concentration of harmful substances. However, the spectroscopic instrument used in this method is large-sized equipment and high in cost, and has a problem that the existence and concentration of a harmful substance cannot be immediately confirmed because of inconvenience in carrying.
Taiwan patent No. 565941 discloses an optical measurement system for measuring the concentration of an analyte. The optical measurement system comprises a concentration sensing device, a light source and a light detector. The concentration sensing device comprises a concentration detection film, an entrance waveguide and an exit waveguide. The light-in waveguide and the light-out waveguide are coupled to the concentration detection film. The light source is arranged at the light inlet end of the light inlet waveguide. The light detector is arranged at the light outlet end of the light outlet waveguide. After the concentration detection film reacts with the object to be detected, the light source emits a first light beam, the first light beam is transmitted to the concentration sensing device through the light inlet end of the light inlet waveguide and received by the concentration sensing device, then the concentration sensing device emits a second light beam, and the second light beam is transmitted to the light detector through the light outlet end of the light outlet waveguide and received by the light detector. The light intensity of the second light beam can be used to calculate the concentration of the analyte.
Although the optical measurement system of the patent has the advantages of low cost and being capable of measuring the concentration of the object to be measured in real time, the problem of optical signal distortion generated in the optical signal transmission process is easily caused because the optical waveguide and the optical waveguide are used as the medium for signal transmission. Moreover, in the patent, the optical fiber is used as an incident light waveguide and an emergent light waveguide, when the optical fiber signal is received by the optical detector and converted into an electrical signal, the problems of poor optical coupling and large attenuation of the optical signal are often caused because the contact points cannot be aligned and fixed well, and when the environment vibrates, the sensing signal is difficult to interpret because the small displacement of the coupling point causes noise or signal variation.
Disclosure of Invention
The object of the present invention is to provide an optical sensor which is portable, can avoid signal distortion, and can immediately confirm the existence of harmful substances.
The optical sensor of the invention is used for sensing an object to be detected and comprises a sensing unit, a first light transmission electrode unit, a light receiving unit, a second light transmission electrode unit and a light emitting unit, wherein the sensing unit is used for generating color change under the action of the object to be detected, the first light transmission electrode unit is positioned below the sensing unit, the light receiving unit is positioned below the first light transmission electrode unit, the second light transmission electrode unit is positioned below the light receiving unit and comprises a light transmission part and a light shielding part, and the light emitting unit is positioned below the second light transmission electrode unit and is used for emitting light towards the sensing unit.
The invention has the beneficial effects that: the sensing unit, the first light penetrating electrode unit, the light receiving unit, the second light penetrating electrode unit and the light emitting unit are stacked in a stacking direction, so that light emitted by the light emitting unit can directly enter the sensing unit, then the sensing unit provides a reflected light, the reflected light can directly enter the light receiving unit and is absorbed by the light receiving unit, and at the moment, the light intensity of the reflected light can be directly and immediately converted into a current signal through the first light penetrating electrode unit and the second light penetrating electrode unit, so that whether an object to be detected exists can be directly reflected. Furthermore, the method is simple. The concentration of the analyte can be reflected by the change of the current signal caused by the change of the light intensity.
Drawings
FIG. 1 is a schematic cross-sectional view of a first embodiment of an optical sensor of the present invention;
FIG. 2 is a schematic perspective exploded view of the first embodiment;
FIG. 3 is a schematic cross-sectional view of a second embodiment of an optical sensor of the present invention;
FIG. 4 is a schematic cross-sectional view of a third embodiment of an optical sensor of the present invention;
FIG. 5 is a schematic perspective exploded view of the third embodiment;
FIG. 6 is a schematic cross-sectional view of a fourth embodiment of an optical sensor of the present invention;
FIG. 7 is a schematic cross-sectional view of a fifth embodiment of an optical sensor of the present invention; and
FIG. 8 is a schematic cross-sectional view of a sixth embodiment of an optical sensor according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Referring to fig. 1 and 2, a first embodiment of the optical sensor of the present invention is used for sensing an object to be measured, and includes a sensing unit 1, a first light transmissive electrode unit 2, a light receiving unit 3, a second light transmissive electrode unit 4, a light emitting unit 5 for emitting light, and a light transmissive supporting substrate 6. The first light-transmitting electrode unit 2 and the second light-transmitting electrode unit 4 of the optical sensor are electrically connected to a current detector (not shown).
Such as, but not limited to, a hazardous substance. Such as, but not limited to, formaldehyde, urea, or mercury, among others. The sensing unit 1 is adjusted or selected according to the object to be detected. The physical form of the sensing unit 1 can be solid, gel or solution. The structure of the sensing unit 1 may be a film formed by the sensing element or a light-transmitting device accommodating the sensing element. Examples of the sensor include, but are not limited to, a sensor formed of a composition containing 4-aminohydrazine-5-mercapto-1, 2,4-triazole (4-aminohydrazine-5-hydrocapto-1, 2,4-triazole, abbreviated as AHMT), a sensor formed of a composition containing bis (hydroxylamine sulfate) and methyl yellow (methyl yellow), a sensor formed of a composition containing a rhodamine-based substance, or a sensor formed of a composition containing urease and phenol red (phenol red). Examples of the rhodamine-based substance include, but are not limited to, rhodamine (rhodamine) and rhodamine hydrazone (rhodamine hydrazone). In the first embodiment, the object to be detected is formaldehyde, and the sensing unit 1 includes a sensing solution formed by components including di (hydroxylamine sulfate) and methyl yellow and a light penetration container (not shown) for containing the sensing solution, or the object to be detected is urea, and the sensing unit 1 includes a sensing solution formed by components including urease and phenol red and a light penetration container (not shown) for containing the sensing solution. The volume of the plurality of sensing solutions was 3 ml.
the first light transmissive electrode unit 2 is located below the sensing unit 1, and contacts the sensing unit 1 or is adjacent to the sensing unit 1. When the first light transmissive electrode unit 2 is adjacent to the sensing unit 1, the distance between the first light transmissive electrode unit 2 and the sensing unit 1 is, for example, 0.1cm to 0.5 cm. The first light-transmitting electrode unit 2 has a thickness ranging from 5nm to 999 nm. The first light-transmitting electrode unit 2 includes a light-transmitting electrode layer 21. The material of the light transmissive electrode layer 21 is, for example, but not limited to, indium tin oxide or metal. The transparent supporting substrate is made of, but not limited to, glass or plastic. In the first embodiment, the thickness of the first light transmissive electrode unit 2 is 300nm, and the light transmissive electrode layer 21 is an ito layer.
The light receiving unit 3 is located below the first light transmissive electrode unit 2 and connected to the light transmissive electrode layer 21 of the first light transmissive electrode unit 2. The thickness of the light receiving unit 3 ranges from 20nm to 2000 nm. The light receiving unit 3 includes a light receiving layer 31. The material of the light receiving layer 31 is, for example, but not limited to, an organic material capable of generating electron-hole pairs after absorption, or a material doped with n-type or p-type substances. Such as, but not limited to, 9-dioctylfluoro-N- (4-butylphenyl) diphenylamine copolymer { poly [9,9-dioctyl fluoroene-co-N- (4-butyl phenyl) diphenylamine ], abbreviated TFB }, phenyl-carbon 61-butyric acid methyl ester (phenyl-C61-butyl acid methyl ester, abbreviated PC61BM), poly {4, 8-bis (5- (2-ethylhexyl) thiophen-2-yl) benzo [1, 2-b; 4, 5-b' ] dithiophene-2, 6-diyl-4- (2-ethylhexyloxycarbonyl) -3-fluoro-thieno [3,4-b ] thiophen-2, 6-diyl) } { poly [4,8-bis (5- (2-ethylhexyl) thiophen-2-yl) -benzo [1, 2-b; 4, 5-b' ] dithiophen e-2,6-diyl-4- (2-ethylhexyloxyphenyl) -3-fluoro-thieno [3,4-b ] -thiophene)) -2,6-di yl ], abbreviated as PBDTTT-EFT }, poly (3-hexylthiophene) [ poly (3-hexylthiophene), abbreviated as P3HT ], poly {4, 8-bis (5- (2-ethylhexyl) thiophen-2-yl) benzo [1, 2-b; 4,5-b '] dithiophene-2, 6-diyl-4- (2-ethylhexanoyl) -thieno [3,4-b ] thiophene-2, 6-diyl } ({ poly [4,8-bis (5- (2-ethylhexyl) thiophene-2-yl) -benzo [1, 2-b; 4, 5-b' ] dithiophen e-2,6-diyl-4- (2-ethylhexanoyl) -thio [3,4-b ] -thiophene) -2,6-diyl ] }, abbreviated as PBDTDTCT, or phenyl-carbon 71-butyric acid methyl ester (phenyl-C71-butyric acid methyl ester, abbreviated as PC71BM), and the like. In the first embodiment, the thickness of the light receiving unit 3 is 400nm, and the light receiving layer 31 is a light receiving layer comprising PBDTTT-CT and PC71BM, the weight ratio of the PBDTTT-CT and PC71BM is 1: 1.5.
the second light transmissive electrode unit 4 is located below the light receiving unit 3 and connected to the light receiving unit 3. The second light-transmitting electrode unit 4 has a thickness ranging from 10nm to 900 nm. The second light-transmitting electrode unit 4 includes an electrode layer 43. The material of the electrode layer 43 is, for example, but not limited to, aluminum. The electrode layer 43 is interdigitated, and the electrode layer 43 includes a light shielding body 431 serving as a light shielding portion 42 and a plurality of through holes 430 commonly cooperating as a light transmitting portion 41, penetrating through the light shielding body 431 and allowing the light of the light emitting unit 5 to pass through to reach the sensing unit 1. The plurality of through holes 430 are rectangular. The plurality of through holes 430 have a size ranging from 200nm to 5 mm. In the first embodiment, the thickness of the second light-transmitting electrode unit 4 is 100nm, the electrode layer 43 is an aluminum layer, and the size of the plurality of through holes 430 is 110 μm. It should be noted that, when the electrode layer 43 is in the interdigital configuration, a light-shielding body 431 of the electrode layer 43 shields a light-emitting portion of the light-emitting unit 5 from being absorbed by the light-receiving unit 3, so as to reduce a background current value (as described later). In addition, the structure of the electrode layer 43 is not limited to the fork type, and any structure may be adopted as long as the light shielding body 431 of the electrode layer 43 can achieve the light shielding effect, and the shape of the plurality of through holes 430 is not limited to the rectangle, as long as the shape can allow the light of the light emitting unit 5 to pass through.
The light transmissive support substrate 6 is disposed under the second light transmissive electrode unit 4 and connected to the electrode layer 43 of the second light transmissive electrode unit 4. The light transmitting support substrate 6 is made of a material such as, but not limited to, glass or plastic. The light penetrates the support substrate 6 with a thickness ranging from 200 μm to 2 mm. It should be noted that the light-transmissive support substrate 6 is used to support any or all of the devices thereon, and thus, whether or not the light-transmissive support substrate 6 is disposed and the position of the light-transmissive support substrate are adjusted according to the mechanical strength (e.g., hardness) of the devices thereon. Further, when the mechanical strength of each element thereabove is sufficient, it may not be necessary to provide the light-transmitting support substrate 6. In the first embodiment, the light-transmitting support substrate 6 is a glass substrate, and the thickness of the light-transmitting support substrate 6 is 700 μm.
In the first embodiment, when the object to be tested is urea, the light emitting unit 5 is a green led lamp emitting light with a dominant wavelength of 518nm and an illumination of 18300lux, or, when the object to be tested is formaldehyde, the light emitting unit 5 is a green laser emitting light with a dominant wavelength of 532nm and an illumination of 65W/m 2.
When the optical sensor of the present invention is operated, first, the first light transmissive electrode unit 2 and the second light transmissive electrode unit 4 are electrically connected to an electrical device, and the electrical device includes a voltage supply and a current detector. The voltage supply is enabled to provide a constant bias voltage and the light emitting unit 5 is enabled to emit light. The light passes through the light transmitting portion 41 of the second light transmitting electrode unit 4, passes through the light receiving unit 3 and the first light transmitting electrode unit 2, and reaches the sensing unit 1. Thereupon the sensing unit 1 provides a first reflected light which is absorbed by the light receiving unit 3. After the light receiving unit 3 absorbs the first reflected light, the light signal of the first reflected light is converted into a current signal through the first light transmissive electrode unit 2 and the second light transmissive electrode unit 4, and a background current value is obtained through the current detector. Then, the object to be measured is contacted with the sensing unit 1 and acts to change the color of the sensing unit 1, and at this time, the light emitted from the light emitting unit 5 passes through the light transmitting portion 41 of the second light transmitting electrode unit 4, passes through the light receiving unit 3 and the first light transmitting electrode unit 2, and reaches the sensing unit 1. The sensing unit 1 provides a second reflected light different from the first reflected light due to the color change, and the second reflected light is absorbed by the light receiving unit 3 through the second light transmissive electrode unit 4. When the light receiving unit 3 absorbs the second reflected light, the light signal of the second reflected light is converted into a current signal through the first light transmissive electrode unit 2 and the second light transmissive electrode unit 4, and a detected current value is obtained through the current detector. And obtaining a current difference value or a current change rate by comparing the background current value with the detection current value, and obtaining whether the object to be detected exists or not by the current difference value or the current change rate. In addition, by establishing a database of the concentration value of the analyte with known concentration and the detection current value, the current difference value or the current change rate thereof, the concentration value of the analyte with unknown concentration can be further known.
Referring to fig. 3, a second embodiment of the optical sensor of the present invention is different from the first embodiment in the position where the light penetrates the support substrate 6. In the second embodiment, the light transmissive support substrate 6 is disposed between the sensing unit 1 and the first light transmissive electrode unit 2, and is connected to and supports the light transmissive electrode layer 21 of the first light transmissive electrode unit 2.
in the present invention, a plurality of sensing data are provided and performed using the optical sensor of the second embodiment, see tables 1 to 4.
TABLE 1
TABLE 2
TABLE 3
TABLE 4
Referring to fig. 4 and 5, a third embodiment of the optical sensor of the present invention is different from the first embodiment in the first light-transmitting electrode unit 2 and the light-receiving unit 3. In the third embodiment, the first light transmissive electrode unit 2 includes a light transmissive electrode layer 22 and a plurality of through holes 20 penetrating the light transmissive electrode layer 22 and allowing light of the light emitting unit 5 to pass therethrough. The first light transmissive electrode unit 2 is interdigitated, and the light-shielding layers 22 and 431 of the electrode layer 43 of the second light transmissive electrode unit 4 are spatially overlapped (see fig. 5). The plurality of perforations 20 range in size from 200nm to 5 mm. The light receiving unit 3 includes a light receiving layer 32 formed with a plurality of through holes 30 penetrating therethrough and through which light of the light emitting unit 5 passes. The plurality of through holes 30 range in size from 200nm to 5 mm. The through holes 20 of the light transmissive electrode layer 22 of the first light transmissive electrode unit 2, the through holes 30 of the light receiving layer 32 of the light receiving unit 3, and the through holes 430 of the electrode layer 43 of the second light transmissive electrode unit 4 are spatially communicated and overlapped, respectively, so that light emitted from the light emitting unit 5 can sequentially pass through the through holes 430, the through holes 30, and the through holes 20 to reach the sensing unit 1.
It should be noted that the through holes 30 of the light receiving unit 3 of the optical sensor of the third embodiment can allow the light from the light emitting unit 5 to pass through directly, so as to reduce the absorption caused by the contact with the light receiving unit 3, and further reduce the background current value, however, in both the optical sensor of the first embodiment and the optical sensor of the second embodiment, the light from the light emitting unit 5 contacts the light receiving unit 3 and is absorbed, resulting in a larger background current, and therefore, the optical sensor of the third embodiment is more accurate in sensing compared to the optical sensor of the first embodiment and the optical sensor of the second embodiment.
Referring to fig. 6, a fourth embodiment of the optical sensor of the present invention is used for sensing an object to be measured, and includes a sensing unit 1, a first light transmissive electrode unit 2, a light receiving unit 3, a second light transmissive electrode unit 4, a light emitting unit 5 for emitting light, and a light transmissive supporting substrate 6.
the object to be measured, the sensing unit 1, the first light transmissive electrode unit 2, and the light receiving unit 3 are the same as the object to be measured, the sensing unit 1, the first light transmissive electrode unit 2, and the light receiving unit 3 of the first embodiment, and thus, the description thereof is omitted.
The second light transmissive electrode unit 4 is located below the light receiving unit 3 and connected to the light receiving unit 3. The second light transmissive electrode unit 4 includes a light shielding layer 44 and a light transmissive electrode layer 46. The light shielding layer 44 is disposed below the light receiving unit 3, embedded in the light receiving unit 3, and includes a light shielding body 441 serving as a light shielding portion 42, and a plurality of through holes 440 commonly cooperating as a light transmitting portion 41, penetrating through the light shielding body 441, and allowing light of the light emitting unit 5 to pass through to reach the sensing unit 1. The size range of the plurality of through holes 440 is 50nm to 5 mm. The light transmissive electrode layer 46 is disposed under the light shielding layer 44 and connected to the light shielding layer 44. The light transmissive electrode layer 46 has a thickness in the range of 10nm to 900 nm. The light transmissive support substrate 6 is disposed under the second light transmissive electrode unit 4 and connected to the light transmissive electrode layer 46 of the second light transmissive electrode unit 4. The light emitting unit 5 is located below the light transmissive support substrate 6.
it should be noted that the second light transmissive electrode unit 4 of the optical sensor of the first and second embodiments is not easy to manufacture, and has the problems of high cost and low yield, but the second light transmissive electrode unit 4 of the optical sensor of the fourth embodiment is easy to manufacture, so that the cost can be reduced and the yield can be improved. Therefore, the optical sensor of the fourth embodiment has the advantages of low cost and high yield compared to the optical sensors of the first and second embodiments.
Referring to fig. 7, a fifth embodiment of the optical sensor of the present invention is different from the fourth embodiment in that the second light-transmitting electrode unit 4. In the fifth embodiment, the light transmissive electrode layer 46 of the second light transmissive electrode unit 4 is disposed between the light receiving unit 3 and the light transmissive support substrate 6, and connects the light receiving unit 3 and the light transmissive support substrate 6. The light-shielding layer 44 of the second light-transmissive electrode unit 4 is disposed between the light-transmissive support substrate 6 and the light-emitting unit 5, and is connected to the light-transmissive support substrate 6.
Referring to fig. 8, a sixth embodiment of the optical sensor of the present invention is different from the fourth embodiment in that the second light-transmitting electrode unit 4. In the sixth embodiment, the light transmissive electrode layer 46 of the second light transmissive electrode unit 4 is connected to the light receiving unit 3. The light-shielding layer 44 of the second light-transmissive electrode unit 4 is disposed between the light-transmissive electrode layer 46 and the light-transmissive support substrate 6, and connects the light-transmissive electrode layer 46 and the light-transmissive support substrate 6.
In summary, the sensing unit 1, the first light transmissive electrode unit 2, the light receiving unit 3, the second light transmissive electrode unit 4 and the light emitting unit 5 are stacked in a stacking direction, so that light emitted from the light emitting unit 5 can directly enter the sensing unit 1, and then the sensing unit 1 provides a reflected light, and the reflected light can directly enter the light receiving unit 3 and be absorbed by the light receiving unit 3, and at this time, the light intensity of the reflected light can be directly and immediately converted into a current signal through the first light transmissive electrode unit 2 and the second light transmissive electrode unit 4, so as to directly reflect whether an object to be detected exists. Furthermore, the method is simple. The concentration of the substance to be measured can be reflected by the current signal change caused by the light intensity change, so the purpose of the invention can be achieved.

Claims (9)

1. an optical sensor for sensing an object to be measured, comprising a light emitting unit and a sensing unit, wherein the sensing unit is used for reacting with the object to be measured to generate a color change, and the optical sensor further comprises:
a first light penetration electrode unit located below the sensing unit;
A light receiving unit located below the first light transmitting electrode unit; and
A second light transmitting electrode unit located below the light receiving unit and including a light transmitting portion and a light shielding portion,
the light emitting unit is located below the second light transmitting electrode unit and is used for emitting light towards the sensing unit.
2. The optical sensor as claimed in claim 1, wherein the second light transmissive electrode unit comprises an electrode layer, the electrode layer comprises a light shielding body as the light shielding portion and a plurality of through holes as the light transmissive portion, penetrating through the light shielding body and allowing the light of the light emitting unit to pass through to reach the sensing unit.
3. The optical sensor of claim 2, further comprising a light transmissive support substrate between the second light transmissive electrode unit and the light emitting unit.
4. The optical sensor of claim 2, further comprising a light transmissive support substrate disposed between the sensing unit and the first light transmissive electrode unit.
5. The optical sensor as claimed in claim 2, wherein the first light transmissive electrode unit includes a light transmissive electrode layer, and a plurality of through holes penetrating the light transmissive electrode layer and allowing light of the light emitting unit to pass therethrough; the light receiving unit includes a light receiving layer formed with a plurality of through holes penetrating therethrough and through which light of the light emitting unit passes; the plurality of through holes of the light-transmitting electrode layer of the first light-transmitting electrode unit, the plurality of through holes of the light-receiving layer of the light-receiving unit, and the plurality of through holes of the electrode layer of the second light-transmitting electrode unit are respectively communicated and overlapped in space.
6. The optical sensor as claimed in claim 5, wherein the light-transmissive electrode layer is spatially overlapped with the light-shielding body of the electrode layer of the second light-transmissive electrode unit.
7. The optical sensor as claimed in claim 1, wherein the second light transmissive electrode unit includes a light shielding layer and a light transmissive electrode layer, the light shielding layer includes a light shielding body as the light shielding portion and a plurality of through holes commonly used as the light transmissive portion and passing through the light shielding body for the light of the light emitting unit to pass through to reach the sensing unit.
8. The optical sensor as claimed in claim 7, wherein the light shielding layer is disposed between the light receiving unit and the light transmissive electrode layer, and the light transmissive electrode layer is disposed between the light shielding layer and the light emitting unit.
9. The optical sensor as claimed in claim 7, wherein the light shielding layer is disposed between the light emitting unit and the light transmissive electrode layer, and the light transmissive electrode layer is disposed between the light shielding layer and the light receiving unit.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201616127A (en) * 2014-10-31 2016-05-01 國立交通大學 Vertical sensor having multiple layers and manufacturing method thereof, and sensing system and sensing method using the vertical sensor having multiple layers
TWI565941B (en) * 2016-01-07 2017-01-11 國立交通大學 Optical measurement system and concentration sensing device thereof
CN106802280A (en) * 2015-11-26 2017-06-06 财团法人工业技术研究院 Optical sensing module
CN108205001A (en) * 2016-12-20 2018-06-26 财团法人交大思源基金会 Gas detector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4834614B2 (en) * 2007-06-12 2011-12-14 キヤノン株式会社 Radiation detection apparatus and radiation imaging system
JP5310373B2 (en) * 2009-05-14 2013-10-09 ソニー株式会社 Optical detector
TWM491858U (en) * 2014-08-07 2014-12-11 Univ Ming Chi Technology Signal transformation device capable of imaging real-time
KR102573163B1 (en) * 2015-08-21 2023-08-30 삼성전자주식회사 Image sensor and electronic device including the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201616127A (en) * 2014-10-31 2016-05-01 國立交通大學 Vertical sensor having multiple layers and manufacturing method thereof, and sensing system and sensing method using the vertical sensor having multiple layers
CN106802280A (en) * 2015-11-26 2017-06-06 财团法人工业技术研究院 Optical sensing module
TWI565941B (en) * 2016-01-07 2017-01-11 國立交通大學 Optical measurement system and concentration sensing device thereof
CN108205001A (en) * 2016-12-20 2018-06-26 财团法人交大思源基金会 Gas detector

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