CN110548528A - SiO 2/SiC material with core-shell structure and preparation method and application thereof - Google Patents
SiO 2/SiC material with core-shell structure and preparation method and application thereof Download PDFInfo
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- 229910004298 SiO 2 Inorganic materials 0.000 title claims abstract description 89
- 239000011258 core-shell material Substances 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 37
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 28
- 239000006185 dispersion Substances 0.000 claims abstract description 20
- 229920000620 organic polymer Polymers 0.000 claims abstract description 15
- 239000002491 polymer binding agent Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 238000001354 calcination Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000010000 carbonizing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011941 photocatalyst Substances 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 69
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 68
- 239000011257 shell material Substances 0.000 description 13
- 239000000047 product Substances 0.000 description 10
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 3
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 3
- 239000007771 core particle Substances 0.000 description 3
- 238000013032 photocatalytic reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920003081 Povidone K 30 Polymers 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
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- 238000000879 optical micrograph Methods 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- SICLLPHPVFCNTJ-UHFFFAOYSA-N 1,1,1',1'-tetramethyl-3,3'-spirobi[2h-indene]-5,5'-diol Chemical compound C12=CC(O)=CC=C2C(C)(C)CC11C2=CC(O)=CC=C2C(C)(C)C1 SICLLPHPVFCNTJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
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- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
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- 239000000615 nonconductor Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003075 superhydrophobic effect Effects 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/20—Carbon compounds
- B01J27/22—Carbides
- B01J27/224—Silicon carbide
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
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Abstract
The invention relates to a SiO 2/SiC material with a core-shell structure and a preparation method and application thereof, wherein the material comprises a SiO 2 core and SiC coated on the outer surface of the SiO 2 core, the preparation method of the core-shell structure comprises the following steps of preparing a mixed dispersion liquid of silicon dioxide and an organic polymer binder by using silicon dioxide particles as a silicon source and an organic polymer binder as a carbon source, heating the mixed dispersion liquid to obtain a precursor of the silicon dioxide/organic polymer binder, drying the precursor and then carbonizing the precursor to obtain silicon dioxide particles coated with carbon, calcining the silicon dioxide particles coated with carbon at 1200-1400 ℃ for 2-5h under a vacuum condition to obtain an initial product, and calcining the initial product to remove the carbon to obtain the SiO 2/SiC material with the core-shell structure.
Description
Technical Field
The invention belongs to the technical field of composite material preparation, and particularly relates to a SiO 2/SiC material with a core-shell structure, and a preparation method and application thereof.
Background
Silicon carbide as a third-generation semiconductor material has the advantages of ideal band gap, high physicochemical stability, acid and alkali resistance, no toxicity, high electronic drift saturation speed and the like, and the silicon carbide nano material has special optical and electrical characteristics due to the change of an energy band under the restraint of nano diameter, and has wide application prospects in the fields of photocatalytic reduction of carbon dioxide, water decomposition, pollutant degradation and the like.particularly, in the process of photocatalytic reaction, in order to make up for the defects of easy recombination of a photo-generated electron hole pair and low visible light responsiveness of silicon carbide, and simultaneously improve the catalytic efficiency under visible light, domestic and foreign scholars modify silicon carbide by compounding silicon carbide with non-metal oxides, metal oxides or metals, wherein the silicon carbide nano material is an important advanced core-shell material, and has application values in the fields of super-hydrophobic surfaces, coating materials, solar cells, nano reactors and catalysts and the like due to the unique structure and properties of a core/void/shell, so that the silicon carbide is a potential core-shell material prepared by SiC (SiC/nano nanowire 2, SiO) and a coaxial shell coating process of SiC, SiO 27, 2.
Disclosure of Invention
The invention solves the problems that the SiO 2/SiC material with the core-shell structure and the preparation method and the application thereof are provided, the SiO 2/SiC takes SiO 2 particles as the core and takes SiC as the shell, and has great potential application prospect.
The invention provides a SiO 2/SiC material with a core-shell structure, which comprises a SiO 2 core and a SiC shell layer wrapped on the outer surface of the SiO 2 core.
The SiO 2/SiC takes SiO 2 particles as a core and takes SiC as a shell, has a unique core-shell structure and has great potential application prospect.
Further, the particle size of the SiO 2 core is 50nm-2 μm.
Therefore, a series of SiO 2/SiC materials with core-shell structures and different SiO 2 core particle sizes can meet different application requirements.
The invention also provides a preparation method of the SiO 2/SiC material with the core-shell structure, which comprises the following steps:
1) Preparing a mixed dispersion liquid of silicon dioxide and an organic polymer binder by taking silicon dioxide particles as a silicon source and an organic polymer binder as a carbon source;
2) heating the mixed dispersion liquid to obtain a silicon dioxide/organic polymer binder precursor;
3) drying the precursor, and then carbonizing to obtain silicon dioxide particles with surfaces coated with carbon;
4) Calcining the silicon dioxide particles coated with carbon for 2-5h under the vacuum condition of 1200-1400 ℃ to obtain an initial product;
5) And calcining the primary product to remove carbon to obtain the SiO 2/SiC with the core-shell structure.
During the calcination process, SiO 2 reacts with carbon particles attached to the surface of the SiO 2 (formula 1), the generated SiO gas reacts with CO gas, the SiO gas which has not yet diffused reacts with the carbon particles attached to the surface of SiO 2 in situ (formula 2), the gas which has not yet diffused reacts with SiO 2 attached to the surface of SiO 2 (formula 3) to generate SiO gas (g) which is used as a raw material of the reaction formula (2), and after the full reaction, a SiC thin layer is generated on the surface of SiO 2.
The main chemical reactions involved in the preparation process are:
C(s)+SiO2＝SiO(g)+CO(g) (1)
C(s)+SiO(g)＝SiC(s)+CO(g) (2)
CO(g)+SiO2＝SiO(g)+CO2(g) (3)
The beneficial effect who adopts above-mentioned scheme is:
(1) The organic binder is used as a carbon source, and the organic binder has viscosity, so that SiO 2 can be bonded and coated and is fully mixed and contacted with SiO 2, carbon in the silicon dioxide and carbon mixture after carbonization is coated on the surface of silicon dioxide particles, the silicon dioxide and the carbon are tightly bonded, and finally the reaction is carried out to generate the SiO 2/SiC material with a firm core-shell structure.
(2) According to the technical scheme, the organic binder is used as a carbon source, the silicon dioxide particles are used as a silicon source, SiC is synthesized in situ and finally SiO 2/SiC with a core-shell structure is formed, and in practical application, SiO 2/SiC with core-shell structures of different SiO 2 core particle sizes and different SiC shell thicknesses can be synthesized by controlling the size of SiO 2 particles and the carbon-silicon ratio.
(3) the raw materials are cheap and easy to obtain, the preparation process is simple and easy to implement, and the method is favorable for industrial production.
on the basis of the scheme, the invention can be further improved as follows:
Further, the silicon dioxide particles in the step 1) are amorphous silicon dioxide, and the particle size of the silicon dioxide particles is 50nm-2 μm.
the amorphous silicon dioxide has high activity, is softened by heating, has certain viscosity, is tightly combined with the carbon source, and is convenient for subsequent full reaction to generate a firm core-shell structure.
Further, the dispersing solvent in the mixed dispersion liquid in the step 1) is ethanol and water, the organic polymer binder is selected from one or more of PVP, PAM or PVA, and the molar ratio of carbon atoms to silicon atoms in the mixed dispersion liquid is (3-5): 1.
The organic binder PVP, PAM or PVA plays a role in dispersion and bonding, and can be tightly bonded with the silica particles after heat treatment.
Specifically, the silica is dispersed with absolute ethanol, an organic binder (PVP, PAM, or PVA) is dissolved in distilled water to obtain an aqueous solution of the organic binder, and after the two are mixed, the mixture is ultrasonically dispersed to obtain a uniform mixed dispersion.
Preferably, the particle size of the silicon dioxide is 50nm-2 μm, and the organic binder is PVP-K30.
Under the condition, the dispersibility of the silicon dioxide is good, the PVP-K30 and the silicon dioxide particles are tightly bonded, and the subsequent reaction is convenient to generate a firm core-shell structure.
Further, in the step 2), the mixed dispersion liquid is heated and stirred for 0.5-2h at the temperature of 80-100 ℃, and a precursor of the silicon dioxide/organic polymer binder is obtained.
therefore, the organic adhesive has viscosity, the silicon dioxide in the mixed dispersion liquid has better viscosity after being heated and softened, and the organic adhesive can be fully adhered to the surface of the silicon dioxide particles after a period of heating treatment.
Further, the precursor in the step 3) is dried at the temperature of 80-110 ℃ and carbonized at the temperature of 400-600 ℃ for 0.5-3 h.
therefore, the drying treatment removes the excessive water, the sample begins to be carbonized at 450 ℃, and the organic polymer binder can be completely carbonized within 0.5-3 h.
preferably, the carbon-coated silica particles are calcined under a vacuum condition of 1350 ℃ for 3 hours to obtain a calcined product.
Under the condition, the crystallinity of the calcined product is better, the granularity is uniform, and the SiC layer on the surface of the silicon oxide is compact and firm.
Further, in the step 5), the primary product is calcined at 600-700 ℃ for 2-5h to remove unreacted carbon, so as to obtain SiO 2/SiC with the core-shell structure.
thus, the carbon which is not completely reacted reacts with oxygen in the air to generate CO 2 gas, and the CO 2 gas is removed, so that the SiO 2/SiC with a high-purity core-shell structure is obtained.
The invention also provides a SiO 2/SiC material with a core-shell structure, which is prepared according to the preparation method of the SiO 2/SiC material with the core-shell structure.
The invention also provides application of the SiO 2/SiC material with the core-shell structure, and the SiO 2/SiC material with the core-shell structure is used as a wave-absorbing stealth material or a photocatalyst.
the SiO 2/SiC nano particles with the core-shell structure are used as photocatalysts, the inner core of the SiO 2/SiC nano particles is made of non-conductor material silicon dioxide, and photo-generated electrons can be promoted to diffuse to a silicon carbide shell layer of a semiconductor material in a direction away from the silicon dioxide in the process of photocatalytic reaction, so that the number of effective electrons which can participate in the photocatalytic reaction on the surface of the SiC is increased, and the photocatalytic activity of the SiC semiconductor material is improved.
Drawings
FIG. 1 is a flow chart of preparation of SiO 2/SiC material with core-shell structure based on the method of the invention.
FIG. 2 is an XRD spectrum of the SiO 2/SiC material with core-shell structure prepared in example 1 of the present invention.
FIG. 3 is an optical micrograph of a SiO 2/SiC material with a core-shell structure prepared in example 1 of the present invention.
FIG. 4 is an XRD spectrum of the SiO 2/SiC material with core-shell structure prepared in example 2 of the present invention.
FIG. 5 is an SEM image of the SiO 2/SiC material with the core-shell structure prepared in example 2 of the invention.
FIG. 6 shows TEM and HRTEM spectra of SiO 2/SiC material with core-shell structure prepared in example 2 of the present invention.
FIG. 7 is a TEM image of the disintegrated SiO 2/SiC core-shell structure obtained in example 14 of the present invention.
Detailed Description
For a better understanding of the present invention, the following further illustrates the present invention with reference to the accompanying fig. 1-7 and the specific embodiments, but the present invention is not limited to the following embodiments.
example 1 (see fig. 1):
(1) Preparing SiO 2/PVP mixed dispersion, namely mixing the spherical SiO 2 particle ethanol dispersion with the average particle size of 2 mu m and PVP aqueous solution according to the silicon-carbon molar ratio of 1:3, and performing ultrasonic dispersion to obtain the mixed dispersion.
(2) Preparing a SiO 2/PVP precursor, namely performing water bath magnetic heating and stirring on the mixed dispersion liquid at the temperature of 90 ℃ for 1 hour to obtain a silicon dioxide/organic polymer binder precursor.
(3) Preparation of carbon-coated silica particles: and transferring the precursor to a blast drying oven for drying, drying at 110 ℃ for 12h, taking out, placing in a tubular resistance furnace, and carbonizing at 450 ℃ for 1h in a nitrogen atmosphere to obtain the carbon-coated silicon dioxide particles.
(4) Preparing SiO 2/SiC with the core-shell structure, namely placing silicon dioxide particles coated with carbon in a high-temperature electric furnace, calcining for 3h at 1350 ℃ under a vacuum condition to obtain a primary product, placing the primary product in a muffle furnace, calcining for 3h at 650 ℃ and removing carbon to obtain SiO 2/SiC with the core-shell structure.
The product prepared in the embodiment 1 is characterized, fig. 2 is an XRD (X-ray diffraction) spectrum of SiO 2/SiC with a core-shell structure, the spectrum shows that the product is composed of two phases of amorphous SiO 2 and SiC, fig. 3 is an optical micrograph of SiO 2/SiC with a core-shell structure, SiO 2/SiC spherical particles with the core-shell structure can be observed from fig. 2, and the SiO 2/SiC prepared by the method has a black core and a white shell, is regular in structure and has the particle size of 1-3 um.
Examples 2 to 13
The steps are the same as those of the embodiment 1, and the reaction raw materials and the preparation experimental conditions are shown in the table 1, so that a series of SiO 2/SiC with core-shell structures and different SiO 2 core particle sizes and SiC shell thicknesses are synthesized, and the practical application requirements are met.
Attached table 1
In the embodiment 2, the steps are similar to those of the embodiment 1, except that the raw materials are selected, spherical silicon dioxide with the average particle size of 75nm is taken as a silicon source, the carbon-silicon ratio is controlled to be 5:1, and a SiO 2/SiC core-shell structure material is obtained.A product obtained in the embodiment 2 is characterized, as shown in FIGS. 4-6, and FIGS. 4, 5 and 6 are XRD, SEM and TEM images of the core-shell structure SiO 2/SiC obtained in the embodiment 2, respectively, as can be seen from FIG. 5, the particle size of the SiO 2/SiC synthesized under the conditions is 15-45nm, the high-resolution transmission electron microscope at the upper right corner in FIG. 6 is the lattice stripe of the shell layer part, the spacing between adjacent lattice stripes is about 0.25nm, and corresponds to the (111) plane spacing of 3C-SiC, and the method successfully prepares the core-shell structure SiO 2/SiC.
Example 14
The SiO 2/SiC core-shell structure prepared in the embodiment 2 is subjected to desilicication treatment, namely SiO 2/SiC is placed in 25 wt% HF solution, and the solution is magnetically heated and stirred for 5 hours to obtain a sample after desilicication, as shown in FIG. 7, compared with FIG. 5, the SiO 2/SiC core-shell structure is destroyed, in the desilicication treatment process, the SiO 2 core reacts with HF, SiO 2 disappears, the SiC shell layer of the SiO 2/SiC core-shell structure is disintegrated into fragments, and the sample consists of a collapsed shell and a small amount of SiC nanowires (reaction by-products).
The invention provides a simple, cheap and controllable preparation method for preparing the SiO 2/SiC core-shell structure material in a large scale, and the SiO 2/SiC core-shell structure prepared by the method has a regular structure, a firm shell and a good application prospect.
Although embodiments of the present invention have been described in detail above, those of ordinary skill in the art will understand that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. The SiO 2/SiC material with the core-shell structure is characterized by comprising a SiO 2 core and a SiC shell layer wrapping the outer surface of the SiO 2 core.
2. The SiO 2/SiC material with the core-shell structure of claim 1, wherein the particle size of the SiO 2 core is 50nm-2 μm.
3. A preparation method of a SiO 2/SiC material with a core-shell structure is characterized by comprising the following steps:
1) Preparing a mixed dispersion liquid of silicon dioxide and an organic polymer binder by taking silicon dioxide particles as a silicon source and an organic polymer binder as a carbon source;
2) Heating the mixed dispersion liquid to obtain a silicon dioxide/organic polymer binder precursor;
3) Drying the precursor, and then carbonizing to obtain silicon dioxide particles with surfaces coated with carbon;
4) Calcining the silicon dioxide particles coated with carbon for 2-5h at 1200-1400 ℃ under a vacuum condition to obtain an initial product;
5) And calcining the primary product to remove carbon to obtain the SiO 2/SiC with the core-shell structure.
4. The preparation method of the SiO 2/SiC material with the core-shell structure of claim 1, wherein the silica particles in step 1) are amorphous silica, and the particle size of the silica particles is 50nm-2 μm.
5. The preparation method of the SiO 2/SiC material with the core-shell structure according to claim 1, wherein the dispersion solvent in the mixed dispersion liquid of step 1) is ethanol and water, the organic polymer binder is selected from one or more of PVP, PAM or PVA, and the molar ratio of carbon atoms to silicon atoms in the mixed dispersion liquid is (3-5): 1.
6. The preparation method of the SiO 2/SiC material with the core-shell structure according to claim 1, wherein in the step 2), the mixed dispersion liquid is heated and stirred for 0.5-2h at 80-100 ℃ to obtain a precursor of the silica/organic polymer binder.
7. The method for preparing SiO 2/SiC material with core-shell structure as claimed in claim 1, wherein the precursor in step 3) is dried at 80-110 ℃ and carbonized at 450-600 ℃ in nitrogen atmosphere for 0.5-3 h.
8. The method for preparing SiO 2/SiC material with core-shell structure as claimed in any one of claims 1 to 7, wherein in step 5), the primary product is calcined at 600-700 ℃ for 2-5h to remove unreacted carbon, so as to obtain SiO 2/SiC with core-shell structure.
9. A core-shell structure SiO 2/SiC material, which is characterized by being prepared according to the preparation method of the core-shell structure SiO 2/SiC material of any one of claims 3-8.
10. use of the core-shell structure SiO 2/SiC material according to any of claims 1 or 2 or the core-shell structure SiO 2/SiC material according to claim 10, characterized in that the core-shell structure SiO 2/SiC is used as a wave-absorbing stealth material or a photocatalyst.
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