CN110544643A - Method for rapidly judging burning-through depth of metal slurry without damage - Google Patents
Method for rapidly judging burning-through depth of metal slurry without damage Download PDFInfo
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Abstract
the invention belongs to the technical field of solar cell testing, and particularly relates to a method for rapidly judging the burn-through depth of metal slurry without damage. The invention comprises the following steps in sequence: respectively collecting PL intensity values of a metal slurry area and a non-metal slurry area of an experimental sample by using a PL tester; an effective PL intensity value is calculated. The invention utilizes photoluminescence spectrum technology, collects PL numerical values of a metal slurry area and a non-metal slurry area, and obtains an effective PL intensity numerical value which can directly represent the burn-through depth of the metal slurry through a certain calculation method, thereby judging the burn-through depth of the metal slurry.
Description
Technical Field
the invention belongs to the technical field of solar cell testing, and particularly relates to a method for rapidly judging the burn-through depth of metal slurry without damage.
Background
With the rapid development of photovoltaic technology, the pursuit of cost and efficiency of cells is also increasing. The most important factor for the efficiency of the battery is recombination. The compounding comprises interface defect compounding, base region defect compounding and compounding brought by metal slurry. The influence of the interface defect recombination and the base region defect recombination is usually tested by making a sample with a special structure, the complex evaluation brought by the metal slurry is complex, a chemical reagent, such as a dangerous mixed acid solution like aqua regia is needed to remove the metal, or the burn-through depth and the corrosion area are observed under a high-power microscope, or the sample with the special structure is made for testing, the test is very complex, especially the battery needs to be damaged, and therefore a simple and convenient detection method for judging the burn-through depth of the metal slurry is urgently needed to be provided.
For example, the chinese invention patent application discloses a passivated solar cell of a multilayer tunnel junction and a method of manufacturing the same [ application No.: 201910434847.3], the invention comprises an N-type crystal silicon substrate, the back surface of the N-type crystal silicon substrate comprises a tunnel junction total layer, a back passivation antireflection film and an N + metal electrode from inside to outside in sequence; the tunnel junction total layer comprises at least two tunnel junction layers, and each tunnel junction layer comprises an oxide layer and an n + doped polycrystalline silicon layer which are arranged from inside to outside.
the invention patent application has the advantage of greatly reducing the burn-through depth of the metal slurry, but the invention patent application still does not provide a method for conveniently detecting the burn-through depth of the metal slurry.
disclosure of Invention
The invention aims to solve the problems and provides a method for rapidly judging the burn-through depth of metal slurry without damage.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for rapidly judging the burn-through depth of metal slurry without damage comprises the following steps:
The method comprises the following steps: respectively collecting PL intensity values of a metal slurry area and a non-metal slurry area of an experimental sample by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area of the experimental sample;
Step two: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
in the method for rapidly judging the burning-through depth of the metal slurry without damage, the experimental sample in the first step is prepared by the following steps:
step A: taking the cleaned silicon wafer as a substrate;
And B: growing a passivation film on the surface of the substrate to obtain a sample to be processed;
and C: and D, coating the metal slurry on one surface of the sample to be treated obtained in the step B, and sintering to obtain the experimental sample.
in the method for rapidly judging the burning-through depth of the metal slurry without damage, the silicon wafer in the step A is a P-type silicon wafer or an N-type silicon wafer.
In the method for rapidly judging the burning-through depth of the metal slurry without damage, the silicon wafer in the step A is a P-type silicon wafer, and the passivation film in the step B is an AlOx/SiNx double-layer passivation film.
in the method for rapidly judging the burning-through depth of the metal slurry without damage, the silicon wafer in the step A is an N-type silicon wafer, and the passivation film in the step B is an SiN passivation film or an SiO2/SiN double-layer passivation film.
In the method for rapidly judging the burn-through depth of the metal slurry without damage, the thickness of the passivation film in the step B is 1-200 nm.
in the above method for rapidly determining the depth of the metal slurry without damage, the sintering temperature in the step C is 700-.
compared with the prior art, the invention has the advantages that:
1. the invention utilizes photoluminescence spectrum technology, collects PL numerical values of the metal slurry area and the nonmetal slurry area, and obtains an effective PL intensity numerical value which can directly represent the burn-through depth of the metal slurry through calculation by a certain calculation method, thereby judging the burn-through depth of the metal slurry.
2. The invention can judge the burn-through depth of the metal slurry without damaging the battery in the process of judging the burn-through depth of the metal slurry.
Drawings
FIG. 1 is a schematic test diagram of the present invention;
Fig. 2 is a graph showing PL test results of metal paste 1 in application example 1;
in the figure: a metal paste area 1 and a non-metal paste area 2.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Example 1
The embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
The method comprises the following steps: taking the cleaned P-type silicon wafer as a substrate;
step two: growing a passivation film on the surface of the substrate, wherein the passivation film is an AlOx/SiNx double-layer passivation film, and the total thickness of the passivation film is 200nm to obtain a sample to be treated;
Step three: coating the metal slurry on one surface of the sample to be treated obtained in the step two, and sintering at 800 ℃ to obtain an experimental sample;
Step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
adding trace 3-valent elements such as boron, gallium, indium and the like into the silicon wafer to obtain a P-type silicon wafer, wherein the number of internal carriers is greatly increased, and majority carriers are holes and minority carriers are free electrons; a trace of 5-valent elements such as phosphorus are added into the silicon wafer to obtain an N-type silicon wafer, the number of internal carriers is greatly increased, and majority carriers are free electrons and minority carrier holes.
the passivation film serves to protect the silicon wafer, and the growth method of the passivation film may be a growth method commonly used in the art, for example, a growth method described in the patent application with application No. 201410208799.3 or application No. 201910269192.9.
the specific composition of the metal paste may be one commonly used in the art, for example, one described in patent documents with application number "200980135908.0" or application number "201621266900.1" or application number "201680046719.6".
example 2
the embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
the method comprises the following steps: taking the cleaned N-type silicon wafer as a substrate;
step two: growing a passivation film on the surface of the substrate, wherein the passivation film is an SiN passivation film, and the total thickness of the passivation film is 200nm to obtain a sample to be processed;
Step three: coating the metal slurry on one surface of the sample to be treated obtained in the step two, and sintering at 800 ℃ to obtain an experimental sample;
step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
Step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
example 3
The embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
the method comprises the following steps: taking the cleaned N-type silicon wafer as a substrate;
step two: growing a passivation film on the surface of the substrate, wherein the passivation film is a SiO2/SiN double-layer passivation film, and the total thickness of the passivation film is 200nm to obtain a sample to be processed;
Step three: coating the metal slurry on one surface of the sample to be treated obtained in the step two, and sintering at 800 ℃ to obtain an experimental sample;
Step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
example 4
the embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
the method comprises the following steps: taking the cleaned P-type silicon wafer as a substrate;
Step two: growing a passivation film on the surface of the substrate, wherein the passivation film is an AlOx/SiNx double-layer passivation film, and the total thickness of the passivation film is 1nm to obtain a sample to be treated;
step three: coating the metal slurry on one surface of the sample to be treated obtained in the step two, and sintering at 700 ℃ to obtain an experimental sample;
Step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
example 5
The embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
The method comprises the following steps: taking the cleaned N-type silicon wafer as a substrate;
Step two: growing a passivation film on the surface of the substrate, wherein the passivation film is an SiN passivation film, and the total thickness of the passivation film is 1nm to obtain a sample to be processed;
Step three: coating the metal slurry on one surface of the sample to be treated obtained in the step two, and sintering at 700 ℃ to obtain an experimental sample;
Step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
Step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
Example 6
the embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
The method comprises the following steps: taking the cleaned N-type silicon wafer as a substrate;
step two: growing a passivation film on the surface of the substrate, wherein the passivation film is a SiO2/SiN double-layer passivation film, and the total thickness of the passivation film is 1nm to obtain a sample to be processed;
Step three: coating the metal slurry on one surface of the sample to be treated obtained in the step two, and sintering at 700 ℃ to obtain an experimental sample;
Step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
Example 7
the embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
The method comprises the following steps: taking the cleaned P-type silicon wafer as a substrate;
Step two: growing a passivation film on the surface of the substrate, wherein the passivation film is an AlOx/SiNx double-layer passivation film, and the total thickness of the passivation film is 100nm to obtain a sample to be treated;
Step three: coating the metal slurry on one surface of the sample to be processed obtained in the step two, and sintering at the sintering temperature of 750 ℃ to obtain an experimental sample;
step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
example 8
the embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
the method comprises the following steps: taking the cleaned N-type silicon wafer as a substrate;
Step two: growing a passivation film on the surface of the substrate, wherein the passivation film is an SiN passivation film, and the total thickness of the passivation film is 100nm to obtain a sample to be processed;
step three: coating the metal slurry on one surface of the sample to be processed obtained in the step two, and sintering at the sintering temperature of 750 ℃ to obtain an experimental sample;
Step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
Example 9
the embodiment provides a method for rapidly determining a burning-through depth of a metal paste without damage, as shown in fig. 1, including the following steps:
The method comprises the following steps: taking the cleaned N-type silicon wafer as a substrate;
Step two: growing a passivation film on the surface of the substrate, wherein the passivation film is a SiO2/SiN double-layer passivation film, and the total thickness of the passivation film is 100nm to obtain a sample to be processed;
step three: coating the metal slurry on one surface of the sample to be processed obtained in the step two, and sintering at the sintering temperature of 750 ℃ to obtain an experimental sample;
step four: respectively collecting PL intensity values of the metal slurry area 1 and the non-metal slurry area 2 of the experimental sample obtained in the third step by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area 1 of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area 2 of the experimental sample;
Step five: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
Application example 1
taking two metal pastes with different components, measuring the burn-through depth according to the method recorded in the example 9, wherein each metal paste is measured twice, the main component of the metal paste 1 is particles containing siloxane and silver, the main component of the metal paste 2 is aluminum, the first test result of the metal paste 1 is shown in fig. 2, and the statistics of the test results are shown in the following table:
and (4) analyzing results: the experimental results show that the testing method provided by the invention can visually reflect the burn-through depth of the metal slurry, the detection method is simple and convenient, and the expected purpose of the invention is achieved.
the above detection data are detected by a PL detector manufactured by Shanghai He Shuang solar technology Co.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
although the terms metallic paste region 1, non-metallic paste region 2, etc. are used more herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.
Claims (7)
1. a method for rapidly judging the burn-through depth of metal slurry without damage is characterized by comprising the following steps:
the method comprises the following steps: respectively collecting PL intensity values of a metal slurry area (1) and a non-metal slurry area (2) of an experimental sample by using a PL tester to obtain an average PL intensity value PL metal of the metal slurry area (1) of the experimental sample and an average PL intensity value PL non-metal of the non-metal slurry area (2) of the experimental sample;
Step two: and calculating an effective PL intensity value by using the formula PL effective ═ 1/(1/PL metal-1/PL nonmetal), and judging the burn-through depth of the metal slurry according to the specific value.
2. the nondestructive method for rapidly determining the depth of burn-through of a metal paste according to claim 1, wherein the method comprises the following steps: the experimental sample in the first step is prepared by the following steps:
Step A: taking the cleaned silicon wafer as a substrate;
And B: growing a passivation film on the surface of the substrate to obtain a sample to be processed;
And C: and D, coating the metal slurry on one surface of the sample to be treated obtained in the step B, and sintering to obtain the experimental sample.
3. the nondestructive, rapid determination of metal slurry burn-through depth of claim 2 wherein: the silicon wafer in the step A is a P-type silicon wafer or an N-type silicon wafer.
4. the nondestructive, rapid determination of metal slurry bum-through depth of claim 3 comprising: the silicon wafer in the step A is a P-type silicon wafer, and the passivation film in the step B is an AlOx/SiNx double-layer passivation film.
5. the nondestructive, rapid determination of metal slurry bum-through depth of claim 3 comprising: the silicon wafer in the step A is an N-type silicon wafer, and the passivation film in the step B is an SiN passivation film or an SiO2/SiN double-layer passivation film.
6. The nondestructive, rapid determination of metal slurry burn-through depth of claim 2 wherein: and the thickness of the passivation film in the step B is 1-200 nm.
7. The nondestructive, rapid determination of metal slurry burn-through depth of claim 2 wherein: the sintering temperature in the step C is 700-.
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Effective date of registration: 20221215 Address after: 213251 No.1, Shuinan Road, Zhixi town industrial concentration zone, Jintan District, Changzhou City, Jiangsu Province Patentee after: Dongfang Risheng (Jiangsu) New Energy Co.,Ltd. Address before: 213251 No.1, Shuinan Road, Zhixi town industrial concentration zone, Jintan District, Changzhou City, Jiangsu Province Patentee before: DONGFANG RISHENG (CHANGZHOU) NEW ENERGY Co.,Ltd. |