CN110539044A - Method and device for chemically etching microstructure by aid of sparks - Google Patents
Method and device for chemically etching microstructure by aid of sparks Download PDFInfo
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- CN110539044A CN110539044A CN201910918224.3A CN201910918224A CN110539044A CN 110539044 A CN110539044 A CN 110539044A CN 201910918224 A CN201910918224 A CN 201910918224A CN 110539044 A CN110539044 A CN 110539044A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H11/00—Auxiliary apparatus or details, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/02—Electrical discharge machining combined with electrochemical machining
Abstract
the invention discloses a method and a device for chemically etching a microstructure by spark assistance, wherein the method for chemically etching the microstructure by spark assistance comprises the following steps: providing a pulse power supply, wherein the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode; providing a working fluid system, said working fluid system supplying an electrolyte, said anode and said tool electrode being disposed in said electrolyte; switching on the pulse power supply, the pulse power supply outputting a pulse direct current voltage, the pulse direct current voltage having a forward bias. The invention can inhibit the consumption of the tool electrode by applying the pulse direct current voltage with forward bias, the workpiece does not need to be connected with a power supply, and is not influenced by the conductivity of the workpiece material, and the high-efficiency, high-precision and high-surface-quality processing of the conductive material and the non-conductive material can be realized.
Description
Technical Field
The invention relates to the field of microstructure processing, in particular to a method and a device for chemically etching a microstructure by spark assistance.
Background
At present, the microstructure is widely applied in the fields of biomedicine, microreactors, microelectronic chips, high-end clock face covers and the like. Taking a micro-fluidic chip in the biological medical treatment as an example, a large number of long and thin micro-grooves with equal sections are arranged inside the micro-fluidic chip, so that the micro-fluidic chip can perform simultaneous analysis on hundreds of samples in a few minutes or even shorter time, and the liquid flow is controllable, and the consumption of samples and reagents is very little. However, the substrate material of the microfluidic chip is usually glass (main component SiO2), which has the characteristics of high hardness and good chemical stability, so that the processing of the micro-grooves on the surface of the microfluidic chip is very difficult.
Common methods for processing the micro-groove on the surface of the glass comprise mechanical milling, high-temperature hot melting processing, wet etching, spark-assisted chemical etching and the like. The mechanical milling is a mechanical processing method for processing the surface of a workpiece by using a rotary multi-edge milling cutter as a cutter, has the characteristics of convenience and rapidness in operation, high processing efficiency and good size consistency, and is a main processing method for processing glass materials. However, since the hardness of a tool used for machining is required to be higher than that of a workpiece material, and the mohs hardness of glass itself is about 8, diamond or cubic boron nitride having a higher hardness needs to be used as the tool, and the tool is worn during machining, so that the cost for machining and milling glass is high. In addition, because the glass belongs to a hard and brittle material, the defects of edge breakage, microcrack and the like are easily generated in the mechanical processing, so the processing method has certain limitation on application; the high-temperature hot melting processing is a processing mode of heating a workpiece to a (liquid) melting point and then carrying out forming or connection, and has the advantages of stable processing, long service life, difficult corrosion and the like. However, because the melting point of glass is high and is generally over 1000 ℃, the portability of operation in a high-temperature environment is poor, and the material is easy to generate thermal stress and thermal deformation after cooling, the processing precision is poor, and the application is limited; the wet etching is a technique of immersing an etching material in an etching solution for etching, is pure chemical etching, and has the characteristics of good etching surface quality, high etching efficiency and stability. However, since the chemical properties of the glass are stable, only hydrofluoric acid (HF) or sodium hydroxide (NaOH) can be used as the etching solution, and wet etching is used for microstructure processing to remove the selective material of the mask, the mask preparation process is complex and tedious, and thus the wet etching has limitations in application. Spark Assisted Chemical Etching (SACE) is a machining process of composite electrochemical machining (ECD) and Electrical Discharge Machining (EDM), wherein a stable gas film is formed on the surface of a cathode through an electrochemical reaction, then breakdown occurs when the voltage reaches a critical value, and the workpiece material is selectively removed by utilizing the high temperature and high pressure generated during the breakdown and combining the etching characteristic of electrolyte on the workpiece. The spark-assisted chemical etching glass surface microstructure has the characteristics of stable processing, low processing cost, high processing precision and good processing surface quality, and is very suitable for processing the glass surface microstructure.
In recent years, the insulation materials such as spark-assisted chemical etching glass and the like or semiconductor materials have been the hot problem of research, and a lot of colleges and research institutes have made intensive research on the technology and also obtained certain research results. In summary, the disadvantages of the current spark-assisted chemical etching are mainly represented by: (1) when a constant direct current power supply is used, the side wall of the micro groove has large over-cut amount, so that the precise control of the machining precision is influenced; (2) when a pulse direct current is used, the over-cutting of the side wall of the micro-groove is suppressed, but the electrode is worn, so that the uniformity of the cross-sectional dimension is poor in long-groove processing.
disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a method and a device for chemically etching a microstructure by spark assistance, which can achieve the effect of effectively inhibiting the loss of a tool electrode.
The technical scheme adopted by the invention is as follows:
The invention provides a method for chemically etching a microstructure by spark assistance, which comprises the following steps:
Providing a pulse power supply, wherein the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
Providing a working fluid system, said working fluid system supplying an electrolyte, said anode and said tool electrode being disposed in said electrolyte;
And switching on the pulse power supply, outputting pulse direct-current voltage by the pulse power supply, wherein the pulse direct-current voltage has forward bias, and etching the workpiece by using the tool electrode.
The pulse direct-current voltage output by the pulse power supply has positive bias, namely the output pulse direct-current voltage has positive voltage bias compared with the standard direct-current voltage. In operation, the anode, the tool electrode and the electrolyte form a path, and the tool electrode is used for etching a workpiece. When the existing spark-assisted chemical etching process uses standard pulse direct-current voltage, the potential of the standard pulse direct-current voltage in a negative half period is 0V, tool electrode loss exists, the loss of the tool electrode can be inhibited by carrying out forward bias on the standard pulse direct-current voltage, the loss of the tool electrode can be controlled by controlling the time and bias voltage amount of the forward bias on the standard pulse direct-current voltage, and then a micro-groove with a variable cross-section shape is processed automatically and selectively.
Preferably, the forward bias is a voltage bias greater than the absolute value of the equilibrium potential of the tool electrode in the electrolyte. The absolute value of the equilibrium potential of the tool electrode in the electrolyte is denoted as | equilibrium potential |, and when the voltage offset amount for forward-biasing the standard pulse dc voltage is larger than | equilibrium potential |, the tool electrode wear can be completely suppressed.
further preferably, the forward biased voltage bias amount > (absolute value of equilibrium potential of the tool electrode in the electrolyte + 1V).
the invention also provides a device for chemically etching the microstructure by spark assistance, which comprises:
The power supply system comprises a pulse power supply, the pulse power supply can output pulse direct-current voltage, the pulse direct-current voltage has forward bias, the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
And the working solution system comprises a processing tank, the processing tank is used for containing electrolyte, and the anode and the tool electrode are both positioned in the electrolyte in a working state. Preferably, the pulsed power supply is an arbitrary waveform power supply.
Preferably, the pulse power supply includes a pulse dc voltage output module and a bias voltage output module, which are connected by a circuit, the pulse dc voltage output module is configured to output a standard pulse dc voltage, and the bias voltage output module is configured to bias the standard pulse dc voltage.
preferably, the tool electrode is a cluster electrode consisting of at least two electrodes. The group electrode can be an array electrode formed by at least two single electrodes, and group hole synchronous machining or group groove milling machining can be achieved by arranging the group electrode.
Preferably, the feed adjusting device is connected with the tool electrode and used for adjusting the movement of the tool electrode. Feed adjustment devices include, but are not limited to, machine tool motion platforms.
Preferably, the working fluid system further comprises an electrolyte circulation tank, and the electrolyte circulates between the processing tank and the electrolyte circulation tank.
Preferably, a workpiece support frame is arranged in the processing tank.
The invention has the beneficial effects that:
In conventional spark assisted chemical etching, a standard pulsed dc voltage is used at a potential of 0V to cause the tool electrode to react, resulting in electrode wear. The invention provides a method for chemically etching a microstructure by spark assistance, which can inhibit the consumption of a tool electrode by applying a pulse direct current voltage with forward bias, and can control the time of loss and the amount of loss of the tool electrode by controlling the time of forward bias and the amount of bias voltage of a standard pulse direct current voltage so as to independently and selectively process a micro-groove with a variable cross section shape. In addition, high-temperature plasmas formed in the existing electric spark machining technology act on two electrodes, so that electrode loss can be formed on the two electrodes, and the workpiece is required to be made of a conductive material, so that only the conductive material can be machined. In a further beneficial effect, the aim of completely inhibiting the loss of the tool electrode can be achieved by limiting the forward bias voltage to be larger than the balance potential of the tool electrode reaction.
Drawings
FIG. 1 is a polarization curve of a tungsten electrode in example 1 under 6mol/L NaOH solution;
FIG. 2 is a waveform diagram of an output of a pulse power source used in the experiment of example 1;
FIG. 3 is a schematic structural diagram of an apparatus for chemical etching of microstructures with assistance of sparks in example 2;
FIG. 4 is a schematic view showing the breakdown of the gas film in the processing area when the workpiece is processed by the tool electrode in example 2;
FIG. 5 is a representation of a tungsten electrode after spark-assisted chemical etching using standard pulsed DC and pulsed DC at 2V bias in example 2;
FIG. 6 is a representation of the tungsten electrode and resulting micro-grooves after spark assisted chemical etching in example 3.
Detailed Description
the concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
Example 1
The embodiment of the invention provides a method for chemically etching a microstructure by spark assistance, which comprises the following steps of:
(1) Providing a pulse power supply, wherein the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
(2) providing a working fluid system, said working fluid system supplying an electrolyte, said anode and said tool electrode being disposed in said electrolyte;
(3) switching on the pulse power supply, the pulse power supply outputting a pulse direct current voltage, the pulse direct current voltage having a forward bias.
In the embodiment, the pulse power supply is any waveform power supply, a 2V forward bias pulse direct current voltage is output during experiments, the anode is a graphite electrode, the tool electrode is a tungsten electrode, and the electrolyte is 6mol/L NaOH.
As shown in FIG. 1, the polarization curve of the tungsten electrode (connected to the positive electrode to form the anode) in 6mol/L NaOH (i.e. the electrolyte used in the spark-assisted chemical etching microstructure test in this example) solution was studied, and it can be seen from the polarization curve that the equilibrium potential U0 of the tungsten electrode under the above-mentioned processing conditions is-0.9V, i.e. when the anode voltage is greater than-0.9V, the tungsten undergoes the anodic oxidation reaction, and the ion reaction equation is as follows:
W+8OH→WO+4HO+6e
When the tungsten electrode undergoes an anodic oxidation reaction, the electrode material is consumed, i.e., electrode loss is formed.
Different from the electrode connection method when the polarization curve is made, when the spark-assisted chemical etching microstructure is carried out, the tungsten electrode is connected with the negative electrode, the pulse power supply is switched on for etching, and the pulse power supply output waveform shown in figure 2 is adopted in the experiment. When the connected pulse power supply outputs a standard pulse dc voltage, as shown in fig. 2 (a), the entire pulse period of the standard pulse dc voltage is ρ, the magnitude of the dc voltage output during the positive half period t1 is U ρ ρ ρ, the voltage Uf output during the negative half period t0 is 0, and | equilibrium potential U0| -0.9V | is plotted on the coordinate axis above the zero line because the negative potential of the voltage waveform actually causes the oxidation reaction of the tungsten electrode. In electrochemical machining, the equilibrium potential is actually the zero line where oxidation-reduction reactions occur, so that the potential (0V) below the equilibrium potential in fig. 2 (a) will cause the tungsten electrode to undergo anodic oxidation reactions, resulting in electrode loss, which also explains the reason for the electrode loss in conventional standard pulsed dc spark-assisted chemical etching. In order to overcome the above-mentioned drawbacks, the embodiment of the present invention proposes that the output standard pulse dc voltage is forward biased, so as to achieve suppression of consumption of the tool electrode, and when the forward biased voltage quantity Ut' is greater than the absolute value of the equilibrium potential of the tool electrode in the electrolyte (2V is greater than | -0.9V |), as shown in the voltage waveform shown in fig. 2 (b), there is no potential line below the equilibrium potential, and the tungsten electrode does not undergo an anodic oxidation reaction, so that electrode loss can be completely suppressed.
Example 2
The embodiment of the invention provides a device for chemically etching a microstructure by spark assistance, and referring to fig. 3, the device comprises a pulse power supply 1, the pulse power supply 1 can output pulse direct current voltage, the pulse direct current voltage has forward bias, the anode of the pulse power supply 1 is connected with an anode 3, the cathode of the pulse power supply 1 is connected with a tool electrode 4, the device further comprises a working solution system, the working solution system comprises a processing tank 2, in a working state, the processing tank 2 contains electrolyte 7, the anode 3 and the tool electrode 4 are placed in the electrolyte 7 to form a passage, and the tool electrode 4 is used for etching a workpiece 5. The pulse power supply 1 can be any waveform power supply; the power supply can also be a power supply with a pulse direct-current voltage output module and a bias voltage output module which are connected by a circuit, the pulse direct-current voltage output module can generate standard pulse direct-current voltage, the bias voltage output module can bias the standard pulse direct-current voltage so that the pulse power supply finally outputs pulse direct-current voltage with forward bias, the pulse direct-current voltage output module is of an existing structure such as an existing pulse direct-current power supply, and the bias voltage output module is of an existing structure such as a direct-current voltage deflection circuit mentioned in CN 1881785A. In this embodiment, the pulse power supply 1 is any waveform power supply, the anode 3 is a graphite electrode, and the tool electrode 4 is a tungsten electrode. In order to facilitate the control and adjustment of the distance between the tool electrode 4 and the workpiece 5, the device for spark-assisted chemical etching of microstructures in the preferred embodiment may further comprise a feed adjustment device 8, and in particular, the feed adjustment device 8 may be a machine tool motion platform, which is connected to the tool electrode 4 through an electrode mounting clamp 9, and thereby controls and adjusts the movement of the tool electrode 4. In some preferred embodiments, a workpiece support frame 6 is further disposed in the processing tank 2 to support the workpiece 5. In some preferred embodiments, the working fluid system further comprises an electrolyte circulation tank 10, and in the working state, the electrolyte 7 is pumped from the processing tank 2 to the electrolyte circulation tank 10 by an electrolyte outflow pump 11, and the electrolyte 7 is pumped from the electrolyte circulation tank 10 by an electrolyte inflow pump 12 and flows into the processing tank 2 through a filter 13.
the device for chemically etching the microstructure by the aid of the sparks in the figure 3 is used for etching, and the following operation steps are adopted in an experiment:
1. clamping: installing a workpiece 5 on a workpiece support frame 6, pressing the workpiece by using external mechanical force, fixing the workpiece, wherein the liquid level of an electrolyte 7 is 1-3mm higher than the upper surface of the workpiece 5, and the workpiece 5 is glass in the embodiment; the graphite electrode is soaked in the electrolyte 7; the tungsten electrode is clamped on the electrode mounting clamp 9, and the electrode mounting clamp 9 is connected with a machine tool motion platform and can move along XYZ axes. Similarly, other types of feed adjusting devices, such as those in which the upper portion performs only Z-axis feeding, the lower portion performs XY-direction movement, and the lower portion performs XYZ-direction movement, can be used to finally realize XYZ-axis movement control.
2. Determining an initial machining gap: the Z-axis height is adjusted to determine the distance between the tungsten electrode and the workpiece 5, namely the initial machining gap, and the gap can be adjusted according to the process to achieve the best machining effect.
3. electrolyte circulation: and starting the electrolyte inflow pump 12, pumping the electrolyte 7 out of the electrolyte circulation tank 10, flowing the electrolyte into the processing tank 2 after passing through the filter 13, pumping the electrolyte 7 back into the electrolyte circulation tank 10 under the action of the electrolyte outflow pump 11 to form electrolyte circulation, and controlling the flow rate between the two pumps to ensure that the liquid level of the electrolyte 7 is 1-3mm higher than the upper surface of the workpiece 5 in the whole process, wherein the electrolyte 7 is 6mol/LNaOH in the embodiment.
4. The power connection mode is as follows: the positive electrode of the pulse power supply 1 is connected with a graphite electrode, and the negative electrode is connected with a tungsten electrode.
5. spark-assisted chemical etching of microstructures: and setting a target waveform on the arbitrary waveform power supply, and starting the arbitrary waveform power supply and the double pumps. Fig. 4 is a schematic view showing the breakdown of the gas film in the processing area when the workpiece is processed by using the tool electrode, as shown in fig. 4, the electrolyte is electrolyzed under the action of the electric field to generate a large number of hydrogen bubbles 14, the soaking section of the tungsten cathode soaked in the electrolyte (the area ratio of the soaking section of the graphite electrode soaked in the electrolyte to the soaking section of the tungsten electrode soaked in the electrolyte is more than 100) is quickly surrounded by the bubbles, the gas film is finally formed as the bubbles grow and gather, and when the voltage reaches a critical value, the arc 15 breakdown is formed. When the electric arc 15 breaks down, a plasma channel with a certain temperature (the temperature is 300-500 ℃) is formed, and the working liquid is extruded by instant high-temperature expansion, so that bubbles are cavitated to generate a hydraulic action. The local high temperature and the hydraulic action generated by the induction of the tungsten electrode needle point strengthen the etching of the electrolyte to the glass, and the glass is punched and milled along with the movement and the feeding of the tool electrode 4.
The process verification is respectively carried out on the standard pulse direct current and the 2V biased pulse direct current spark assisted chemical etching, and the parameters of the standard pulse direct current voltage adopted in the comparative example 1 are as follows: the U ρ ρ ρ is 34V, the frequency is 1kHz, the duty ratio is 50%, the pulse dc voltage used in the embodiment 2 is 2V forward biased on the standard pulse dc voltage of the comparative example, other parameters are the same, the electrolyte used in the process verification is 6mol/L NaOH, the diameter of the tool electrode tungsten electrode is 300 μm, the tool electrode is immersed in 1mm, and the tungsten electrodes used in the comparative example 1 and the embodiment 2 are characterized after being processed for 60s, as shown in fig. 5, wherein (a) in fig. 5 shows a tungsten electrode diagram after the spark-assisted chemical etching is performed on the comparative example 1 by using the standard pulse dc voltage; fig. 5 (b) shows a diagram of a tungsten electrode after spark-assisted chemical etching in example 1 using a pulsed dc voltage with a forward bias of 2V. As can be seen from the figure, the tungsten electrode has obvious loss under the standard pulse direct current, the electrode diameter is reduced from 300 μm to 221 μm, while the tungsten electrode loss under the pulse direct current with forward bias of 2V is completely inhibited, and the electrode diameter is kept unchanged at 300 μm.
In the present embodiment, the tool electrode is exemplified by a single tungsten electrode, and when two or more electrode group electrodes are used as the tool electrode, group hole synchronous machining or group groove milling can be realized, and the group electrode can be used repeatedly. In the embodiment, the pulse power supply outputs the pulse direct-current voltage with forward bias in the whole pulse period, the forward bias voltage bias is larger than the absolute value of the balance voltage of the working electrode, the loss of the tool electrode is restrained, and the time for performing forward bias on the standard pulse direct-current waveform and the forward bias voltage bias can be controlled according to actual requirements in the actual operation process, so that the time for performing loss and the loss of the tool electrode are controlled, and further the processing of the variable-section-shape microstructure is realized.
Example 3
In this embodiment, the device for chemically etching a microstructure with spark assistance in fig. 3 is used for etching, and parameters of the pulse dc power supply are as follows: the dc voltage was 50V, the frequency was 1kHz, the duty cycle was 50%, the forward bias voltage was 2V, the electrolyte used was 6mol/LNaOH, the tool electrode used was a tungsten electrode with a diameter of 300 μm, the workpiece was quartz glass, the workpiece was immersed 1mm, the initial gap between the tool electrode and the workpiece was 10 μm, the bite was 100 μm, the machining length was 1mm, and the workpiece feed rate was 1 μ/s. The tungsten electrode after processing and the micro-groove generated on the quartz glass are characterized by performing spark-assisted chemical etching on the surface of the quartz glass by using 2V biased pulse direct current, as shown in FIG. 6, wherein (a) in FIG. 6 shows the tungsten electrode after processing, no electrode loss can be seen, the diameter of the tungsten electrode is kept unchanged at 300 μm, and (b) in FIG. 6 shows the micro-groove generated after processing, it can be seen that the width of the micro-groove processed by 2V biased pulse direct current is 345 μm, the single-side over-cut amount is 22.5 μm, the dimensional uniformity in the length direction of the groove is good, the width error is within 5 μm, and the processed surface is smooth due to the groove processed by chemical etching.
Claims (10)
1. a method of spark assisted chemical etching of microstructures comprising the steps of:
Providing a pulse power supply, wherein the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
providing a working fluid system, said working fluid system supplying an electrolyte, said anode and said tool electrode being disposed in said electrolyte;
And switching on the pulse power supply, outputting pulse direct-current voltage by the pulse power supply, wherein the pulse direct-current voltage has forward bias, and etching the workpiece by using the tool electrode.
2. the method of spark-assisted chemical etching of a microstructure according to claim 1, wherein the forward bias is at a voltage offset > absolute value of equilibrium potential of the tool electrode in the electrolyte.
3. The method of claim 2, wherein the forward bias voltage bias is > (absolute value of equilibrium potential of the tool electrode in the electrolyte + 1V).
4. an apparatus for spark assisted chemical etching of microstructures comprising:
the power supply system comprises a pulse power supply, the pulse power supply can output pulse direct-current voltage, the pulse direct-current voltage has forward bias, the anode of the pulse power supply is connected with the anode, and the cathode of the pulse power supply is connected with the tool electrode;
and the working solution system comprises a processing tank, the processing tank is used for containing electrolyte, and the anode and the tool electrode are both positioned in the electrolyte in a working state.
5. The apparatus of claim 4, wherein the pulsed power supply is an arbitrary waveform power supply.
6. the apparatus of claim 4, wherein the pulsed power supply comprises a pulsed DC voltage output module and a bias voltage output module, the pulsed DC voltage output module and the bias voltage output module are electrically connected, the pulsed DC voltage output module is configured to output a standard pulsed DC voltage, and the bias voltage output module is configured to bias the standard pulsed DC voltage.
7. An apparatus for spark assisted chemical etching of a microstructure according to any of claims 4 to 6 wherein the tool electrode is a group electrode consisting of at least two electrodes.
8. The apparatus for spark-assisted chemical etching of microstructures according to any one of claims 4 to 6, further comprising feed adjustment means connected to said tool electrode for adjusting the movement of said tool electrode.
9. the apparatus for spark-assisted chemical etching of a microstructure according to any one of claims 4 to 6 wherein the working fluid system further comprises an electrolyte circulation tank, the electrolyte circulating between the process tank and the electrolyte circulation tank.
10. an apparatus for spark assisted chemical etching of a microstructure according to any one of claims 4 to 6 wherein a workpiece support shelf is provided in the processing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910918224.3A CN110539044A (en) | 2019-09-26 | 2019-09-26 | Method and device for chemically etching microstructure by aid of sparks |
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| CN111618385A (en) * | 2020-06-11 | 2020-09-04 | 南通精育机械有限公司 | Roller electric spark character processing device |
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