CN110534407A - Crystallization Si-Ge mutually expands the method for inhibiting model and preparing Ge/Si void substrate to building laser again - Google Patents
Crystallization Si-Ge mutually expands the method for inhibiting model and preparing Ge/Si void substrate to building laser again Download PDFInfo
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- CN110534407A CN110534407A CN201910648698.0A CN201910648698A CN110534407A CN 110534407 A CN110534407 A CN 110534407A CN 201910648698 A CN201910648698 A CN 201910648698A CN 110534407 A CN110534407 A CN 110534407A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The present invention relates to a kind of building laser, crystallization Si-Ge mutually expands the method for inhibiting model and preparing Ge/Si void substrate again, there are phase issue of inter-diffusion by Si-Ge during Ge epitaxial layer on crystallization Si substrate again for laser for model building method of the invention, establish Biot-fourier equation, Si-Ge interdiffustion coefficient and state the mutual diffusion equation of Si-Ge, pass through model inference and emulation, establishing laser, crystallization Si-Ge mutually expands inhibition model again, mutually being expanded according to the Si-Ge inhibits model that can optimize laser crystallization process parameter again, so that laser again crystallization preparation Ge/Si void substrate during, inhibit Si-Ge phase interdiffusion phenomenon, important technology reference is provided for Ge epitaxial layer on laser again the Si substrate of crystallization technology preparation high quality.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to crystallization Si-Ge mutually expands inhibition again for a kind of building laser
Model and the method for preparing Ge/Si void substrate.
Background technique
Direct epitaxial growth Ge epitaxial layer (Ge/Si) technology, has both the advantage of Si substrate Yu Ge semiconductor, In on Si substrate
Microelectronics and optoelectronic areas application potential are huge.However, due to the lattice mismatch between Si and Ge there are 4.2%, traditional work
During skill, Si and Ge Interfacial Dislocations defect can extend longitudinally to the surface of Ge, in turn during epitaxial layer progressive additive
Lead to the reduction of Ge/Si crystal quality.
In order to avoid dislocation defects extend along longitudinal direction during extension, the side of Ge/Si transverse crystallizing growth can be used
Method inhibits the extension of defect and then obtains the Ge/Si of high quality, and crystallization process provides 808nm laser to solve this problem again
One effective approach, the technology is by control laser technical parameters, so that certain thickness Ge epitaxial layer melts and realizes crystalline substance
Lattice reset recrystallization, and then realize the preparation of the thin Ge/Si of high quality.But crystallization process substantially belongs to high warm to laser again
Treatment process is prepared on Si substrate in the technical process of Ge epitaxial layer using it, and laser-induced high-temperature heat treatment can accelerate atom
Diffusion motion, therefore inevitably cause phase counterdiffusion of Si, Ge atom near Si substrate with Ge epitaxial layer interface existing
As this is very unfavorable for the subsequent device manufacture based on Ge epitaxial layer on Si substrate.
Therefore, establishing laser, crystallization Si-Ge mutually expands and inhibits model again, for the crystallization work again of Ge epitaxial layer laser on Si substrate
The application of skill has important value.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of building laser crystallization Si-Ge again
Mutually expand the method for inhibiting model and preparing Ge/Si void substrate.The technical problem to be solved in the present invention is real by the following technical programs
It is existing:
The present invention provides it is a kind of building laser again crystallization Si-Ge mutually expands inhibition model method, comprising:
S1: the mutual diffusion equation of Si-Ge is obtained；
S2: the model of Si-Ge interdiffustion coefficient and concentration and the mould of Si-Ge interdiffustion coefficient and temperature are established
Type；
S3: according to the model of the model and Si-Ge interdiffustion coefficient and temperature of Si-Ge interdiffustion coefficient and concentration,
Obtain Si-Ge interdiffustion coefficient；
S4: the Biot-fourier equation of building laser crystallization process again；
S5: according to the Biot-fourier equation, the Si-Ge interdiffustion coefficient and the mutual diffusion equation of the Si-Ge, by imitative
Really establish the laser mutual diffusion model of crystallization Si-Ge again；
S6: it according to the simulation result of the laser mutual diffusion model of crystallization Si-Ge again, establishes Si-Ge and mutually expands and inhibit mould
Type.
In one embodiment of the invention, the step S1 includes:
S11: obtaining the relationship between concentration gradient and diffusion flux according to Fick's first law,
Wherein, J indicates that diffusion flux, D indicate that diffusion coefficient, C indicate the volumetric concentration of Si or Ge,Indicate concentration ladder
Degree, negative sign indicate that dispersal direction is the opposite direction of concentration gradient；
S12: obtaining the mass balance expression formula under one-dimensional diffusion flux according to law of conservation,
Wherein, JxIndicate that one-dimensional diffusion flux, Δ x indicate infinitesimal length in the x-direction, SyzIndicate interfacial area,Indicate function of the concentration about diffusion time,
[J using the Taylor expansion of the flux components along x-axis, in formulax(x)-Jx(x+ Δ x) could alternatively beIt obtains,
S13: it is expressed according to the mass balance under the relational expression and one-dimensional diffusion flux between concentration gradient and diffusion flux
The Taylor expansion of formula obtains the mutual diffusion equation of Si-Ge,
In one embodiment of the invention, the step S2 includes:
S21: according to the mutual diffusion equation of Si-Ge, using the open country Boltzmann Yu convert to obtain Si-Ge interdiffustion coefficient with
The expression formula of concentration,
Wherein, D (C*) indicate that interdiffustion coefficient when Ge concentration is C*, t indicate that laser crystallization time again, z indicate to expand
Depth is dissipated, C (z) indicates function of the Ge concentration about diffusion depth, zMIndicate the position of the open country Yu plane；
S22: obtaining the expression formula of Si-Ge interdiffustion coefficient and temperature using Arrhenius formula,
Wherein, D0Indicate that the relationship factor of Si-Ge interdiffustion coefficient and concentration, Ea indicate diffusion activation energy, k indicates glass
The graceful constant of Wurz, T indicate temperature.
In one embodiment of the invention, the expression formula of the Si-Ge interdiffustion coefficient is,
Wherein, D01(xGe) indicate the relationship factor of Si-Ge interdiffustion coefficient and concentration when Ge component≤65%, D01
(xGe)=10-2exp(2.5xGe)cm2s-1, D02(xGe) indicate Si-Ge interdiffustion coefficient and concentration when Ge component > 65%
Relationship factor, D01(xGe)=1.12 × 10-4exp(-12.75xGe)cm2s-1, Ea1=3.1eV, Ea2=3.33eV.
In one embodiment of the invention, the step S4 includes:
According to the characteristics of non-uniform heating, establishing equation in laser again crystallization process,
Ignore transient termThe Biot-fourier equation for obtaining laser crystallization process again is as follows,
ρCpV ▽ T (x, y)-▽ (k ▽ T (x, y))=Q (x, y),
Wherein, ρ indicates the density of material, CpHeat capacity at constant pressure, the T expression temperature of expression material, temperature unit K, T (x,
Y) indicate that the Temperature Distribution of different location, k indicate that the thermal conductivity of material, v indicate that laser traverse speed, Q (x, y) indicate different positions
Laser energy that the place's of setting material absorbs, the direction x indicate to be parallel to the direction of Ge/Si epi-layer surface, the direction y indicate perpendicular to
The direction of Ge/Si epi-layer surface.
In one embodiment of the invention, the step S5 includes:
S51: defining Si substrate area, divides network, initializes simulating area；
S52: the function of continuous laser heat source is defined, the function is constant at any time and has Gaussian spatial distribution；
S53: the thermal parameter of definition material, and solve the Biot-fourier equation, the thermal parameter include Si and Ge material density,
Absorption coefficient, specific heat capacity, thermal conductivity and fusing point technological parameter；
S54: according to the solving result of the Biot-fourier equation, the temperature of Ge epitaxial layer different location on Si after laser irradiation is obtained
It is distributed T (x, y), determines the value D of the Si-Ge interdiffustion coefficientinter, and solve the mutual diffusion equation of the Si-Ge；
S55: definition emulation initial temperature is 600 DEG C, and the laser action time is 50ms, obtains laser crystallization Si-Ge phase again
The simulation result of counterdiffusion model.
In one embodiment of the invention, the step S6 includes:
On the basis of the laser simulation result of the mutual diffusion model of crystallization Si-Ge again, establishes Si-Ge and mutually expand depth and laser
Physical relation between crystallization process parameter again,
Wherein, DDiffIndicate that Si-Ge mutually expands depth, unit nm, PlIndicate laser power density, Pl.0When indicating to occur mutually to expand
Laser power, unit W, for Si-Ge material Pl,0For 64W.
The present invention also provides a kind of methods for preparing Ge/Si void substrate, comprising:
Step 1: selection single crystalline Si piece is substrate material；
Step 2: utilizing the magnetron sputtering method Ge epitaxial layer that growth thickness is 400nm on a si substrate；
Step 3: using chemical vapor deposition techniques in the SiO that Ge epi-layer surface deposition thickness is 150nm2Protective layer；
Step 4: will include the single crystal Si substrate, the Ge epitaxial layer and the SiO2The entire material of protective layer adds
Heat is to 600 DEG C, and using laser, crystallization process handles the entire material again, then entire material described in natural cooling,
Wherein, continuous laser of the laser for wavelength 808nm, laser traverse speed 400mm/min, according to claim 1-
The Si-Ge that any one of 7 methods obtain, which mutually expands, inhibits model, obtains laser power parameters, laser power 64W；
Step 5: etching the SiO using dry etch process2Protective layer obtains Ge/Si void substrate.
In one embodiment of the invention, include: before the step 1
Using Fdtd Method FDTD software, SiO is established2Protective layer/Ge epitaxial layer/Si substrate system connects in 808nm
Absorption, reflection and transmission model under continuous laser action, obtain the Ge epitaxial layer and the SiO according to model emulation result2
The thickness parameter of protective layer.
Compared with prior art, the beneficial effects of the present invention are:
Crystallization Si-Ge mutually expands the method for inhibiting model to building laser of the invention again, on laser again crystallization Si substrate
There are phase issue of inter-diffusion by Si-Ge during Ge epitaxial layer, establish Biot-fourier equation, Si-Ge interdiffustion coefficient and state Si-Ge
Mutual diffusion equation, by model inference and emulation, establishing laser, crystallization Si-Ge mutually expands inhibition model again, through the invention
The model can optimize laser crystallization process parameter again, inhibit laser Si-Ge phase interdiffusion phenomenon in crystallization process again, be
Crystallization technology prepares Ge epitaxial layer offer important technology reference on the Si substrate of high quality to laser again.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and cooperate attached drawing, detailed description are as follows.
Detailed description of the invention
Fig. 1 a is SEM (scanning electron after 800 DEG C of rapid thermal annealings of Ge epitaxial layer on a kind of Si provided in an embodiment of the present invention
Microscope) figure；
Fig. 1 b is the EDS (energy of sample after 800 DEG C of rapid thermal annealings of Ge epitaxial layer on a kind of Si provided in an embodiment of the present invention
Chromatic dispersion quantity X-ray spectrum) curve graph；
Fig. 2 is that crystallization Si-Ge mutually expands the method flow for inhibiting model to a kind of building laser provided in an embodiment of the present invention again
Figure；
Fig. 3 is the one-dimensional infinitely small bulk diffusion schematic diagram of one kind provided in an embodiment of the present invention；
Fig. 4 is the temperature point that Ge epitaxial layer occurs when part is melted on a kind of laser irradiation Si provided in an embodiment of the present invention
Butut；
Fig. 5 is that the section x=0 when part is melted occurs for Ge epitaxial layer on a kind of laser irradiation Si provided in an embodiment of the present invention
Locate the Ge composition profile on depth direction；
Fig. 6 is that temperature when all fusings occur for Ge epitaxial layer on a kind of laser irradiation Si provided in an embodiment of the present invention is divided
Butut；
Fig. 7 is that the section x=0 when all fusings occurs for Ge epitaxial layer on a kind of laser irradiation Si provided in an embodiment of the present invention
Locate the Ge composition profile on depth direction；
Fig. 8 is a kind of laser power provided in an embodiment of the present invention and Si-Ge mutually expands the quantitative relationship figure between depth；
Fig. 9 a is one kind provided in an embodiment of the present invention in different SiO2System is continuous to 808nm under the conditions of overburden cover
The absorptivity and reflectivity changes curve of laser (Ge epitaxy layer thickness is 300nm)；
Fig. 9 b is one kind provided in an embodiment of the present invention in different SiO2System is continuous to 808nm under the conditions of overburden cover
The absorptivity and reflectivity changes curve of laser (Ge epitaxy layer thickness is 400nm)；
Figure 10 is a kind of SiO provided in an embodiment of the present invention2When protective layer thickness is 150nm, different Ge epitaxy layer thickness
Under the conditions of system to the absorption variations curve of 808nm continuous laser.
Specific embodiment
In order to which the present invention is further explained to reach the technical means and efficacy that predetermined goal of the invention is taken, below in conjunction with
The drawings and the specific embodiments, to a kind of building laser proposed according to the present invention, crystallization Si-Ge mutually expands and inhibits model and system again
The method of standby Ge/Si void substrate is described in detail.
For the present invention aforementioned and other technology contents, feature and effect, in the specific embodiment party of following cooperation attached drawing
Formula can be clearly presented in being described in detail.By the explanation of specific embodiment, predetermined purpose institute can be reached to the present invention
The technical means and efficacy taken more understand deeply and specifically, however appended attached drawing be only to provide reference and description it
With, not be used to technical solution of the present invention is limited.
Embodiment one
Crystallization process and thermal anneal process belong to high-temperature heat treatment process to laser again, and Si-Ge phase counterdiffusion is driven by heat
Caused by dynamic, on a si substrate in the high-temperature heat treatment process of Ge epitaxial layer, it will usually Si-Ge phase counterdiffusion occurs, incorporated by reference to
It is SEM after 800 DEG C of rapid thermal annealings of Ge epitaxial layer on a kind of Si provided in an embodiment of the present invention referring to Fig. 1 a and Fig. 1 b, Fig. 1 a
Figure, Fig. 1 b is the EDS curve graph of sample after 800 DEG C of rapid thermal annealings of Ge epitaxial layer on a kind of Si provided in an embodiment of the present invention,
Along the direction perpendicular to the interface Si-Ge, using the phase counterdiffusion between EDS research Si and Ge, wherein the interface Si-Ge is in depth
Near 1 μm, left side is Si substrate, and right side is Ge epitaxial layer.From the graph, it is apparent that after high-temperature quick thermal annealing,
Si atom is diffused into Ge epitaxial layer, and diffusion depth is larger, and to be diffused into Si substrate relatively fewer for Ge atom, and Si atom expands
It dissipates to enter in Ge epitaxial layer and will seriously affect the performance that subsequent applications Ge epitaxial layer prepares device.
Ge-Si based on Ge epitaxial layer high-temperature heat treatment on Si substrate mutually expands phenomenon, and the present embodiment is according to semiconductor technology
Principle, proposing a kind of building laser, crystallization Si-Ge mutually expands the method for inhibiting model again, that is, Ge-Si mutually expands depth and laser again
Physical relation between crystallization process parameter can optimize laser crystallization process parameter again by the model, inhibit laser again
Si-Ge phase interdiffusion phenomenon in crystallization process provides important skill for the laser Ge/Si void substrate that crystallization technology prepares high quality again
Art reference.
Fig. 2 is referred to, Fig. 2 is that crystallization Si-Ge mutually expands inhibition model to a kind of building laser provided in an embodiment of the present invention again
Method flow diagram, as shown, the building laser of the present embodiment again crystallization Si-Ge mutually expand inhibit model method, comprising:
S1: the mutual diffusion equation of Si-Ge is obtained；
Specifically, the step S1 includes:
S11: obtaining the relationship between concentration gradient and diffusion flux according to Fick's first law,
Wherein, J indicates that diffusion flux, D indicate that diffusion coefficient, C indicate the volumetric concentration of Si or Ge,Indicate concentration ladder
Degree, negative sign indicates that dispersal direction is the opposite direction of concentration gradient, that is, Si, Ge atom are expanded from high concentration region to low concentration region
It dissipates；
S12: obtaining the mass balance expression formula under one-dimensional diffusion flux according to law of conservation,
Mass balance may be considered, and flow into flow-outflow flow=accumulation (or turnover rate), the Si of the present embodiment research
The diffusion of Ge epitaxial layer structure is along the direction perpendicular to the surface Si on substrate, therefore the Si-Ge of the present embodiment mutually expands
It dissipating and belongs to one-dimensional diffusion, refer to Fig. 3, Fig. 3 is the one-dimensional infinitely small bulk diffusion schematic diagram of one kind provided in an embodiment of the present invention,
As shown, arrow indicates that diffusion flux outputs and inputs x-component in figure, for one-dimensional diffusion flux, mass balance can be with
It is expressed as,
Wherein, JxIndicate that one-dimensional diffusion flux, Δ x indicate infinitesimal length in the x-direction, SyzIndicate interfacial area,Indicate function of the concentration about diffusion time.
[J using the Taylor expansion of the flux components along x-axis, in formula (2)x(x)-Jx(x+ Δ x) could alternatively beIt obtains,
S13: obtaining the mutual diffusion equation of Si-Ge according to formula (1) and formula (3),
S2: the model of Si-Ge interdiffustion coefficient and concentration and the mould of Si-Ge interdiffustion coefficient and temperature are established
Type；
Specifically, the step S2 includes:
S21: according to the mutual diffusion equation of Si-Ge, using the open country Boltzmann Yu convert to obtain Si-Ge interdiffustion coefficient with
The expression formula of concentration,
Since Si-Ge phase counterdiffusion is related to concentration, i.e., during high-temperature heat treatment, Si-Ge interdiffustion coefficient
Increase with the increase of Ge concentration, therefore uses secondary ion of Boltzmann-Matano (Boltzmann Yu the is wild) method from Ge
In mass spectrum (SIMS) curve extract interdiffustion coefficient value, this method can accurately provide Si-Ge interdiffustion coefficient with
The variation of Ge concentration variation.
Boltzmann-Matano method is the extracting concentration dependence counterdiffusion from the SIMS curve of Si-Ge phase counterdiffusion
The graphical method of coefficient is using the expression formula that Boltzmann-Matano method obtains Si-Ge interdiffustion coefficient and concentration,
Wherein, D (C*) indicate that interdiffustion coefficient when Ge concentration is C*, t indicate that laser crystallization time again, z indicate to expand
Depth is dissipated, C (z) indicates function of the Ge concentration about diffusion depth, zMIndicate the position of the open country Yu plane；
S22: obtaining the expression formula of Si-Ge interdiffustion coefficient and temperature using Arrhenius (Arrhenius) formula,
Wherein, D0Indicate that the relationship factor of Si-Ge interdiffustion coefficient and concentration, Ea indicate diffusion activation energy, k indicates glass
The graceful constant of Wurz, T indicate temperature.
Since diffusion of the Ge epitaxial layer in laser crystallization again is a kind of thermal drivers process on Si substrate, Si-Ge mutually expands
Scattered closely related with temperature, therefore, diffusion coefficient can be described with heating power form.
S3: according to the model of the model and Si-Ge interdiffustion coefficient and temperature of Si-Ge interdiffustion coefficient and concentration,
Obtain Si-Ge interdiffustion coefficient；
Specifically, the expression formula of the Si-Ge interdiffustion coefficient is,
Wherein, D01(xGe) indicate the relationship of Si-Ge interdiffustion coefficient and concentration when Ge component≤65%, D01(xGe)=
10-2exp(2.5xGe)cm2s-1, D02(xGe) indicate Ge component > 65% when Si-Ge interdiffustion coefficient and concentration relationship, D01
(xGe)=1.12 × 10-4exp(-12.75xGe)cm2s-1, Ea1=3.1eV, Ea2=3.33eV.
In the present embodiment, the expression formula of Si-Ge interdiffustion coefficient is made of two Arrhenius sums, in formula
First Arrhenius in low Ge concentration areas, that is, the strong shadow of Si-Ge interdiffustion coefficient defect caused by by relaxation
Loud region is occupied an leading position, and second Arrhenius are mainly occupied an leading position in high Ge content region.
S4: the Biot-fourier equation of building laser crystallization process again；
Crystallization belongs to the process of thermal induced phase transition to laser again, and the high instantaneous energy that Ge epitaxial layer absorbs incident laser is simultaneously converted into
Thermal energy, temperature raising are melted after reaching fusing point, and the process of cooling recrystallization occurs again after stopping for laser irradiation, and laser is brilliant again
Change and belong to high-temperature heat treatment process with conventional furnace annealing, unlike conventional furnace annealing, crystallization energy is high and fast again for laser
Degree is fast, and Ge epitaxial layer is caused to be brought rapidly up in a short period of time, in addition, crystallization belongs to non-uniform heating to laser again, laser shines
Penetrate that rear Ge epitaxial layer different zones temperature is different, this also will affect Si-Ge phase counterdiffusion of the laser again in crystallization process.
Specifically, according to the characteristics of non-uniform heating, establishing equation in laser again crystallization process,
Assuming that laser irradiation is continuous in time and laser traverse speed is constant, then transient termIgnore not
Meter, the Biot-fourier equation for obtaining laser crystallization process again is as follows,
ρCpV ▽ T (x, y)-▽ (k ▽ T (x, y))=Q (x, y) (9),
Wherein, wherein ρ indicates the density of material, CpIndicate that the heat capacity at constant pressure of material, T indicate temperature, temperature unit K, T
(x, y) indicates that the Temperature Distribution of different location, k indicate that the thermal conductivity of material, v indicate that laser traverse speed, Q indicate laser energy
Amount, Q (x, y) indicate that the laser energy that material absorbs at different location, the direction x indicate the side for being parallel to Ge/Si epi-layer surface
The direction perpendicular to Ge/Si epi-layer surface is indicated to, the direction y.
S5: according to the Biot-fourier equation, the Si-Ge interdiffustion coefficient and the mutual diffusion equation of the Si-Ge, by imitative
Really establish the laser mutual diffusion model of crystallization Si-Ge again；
Specifically, by the Biot-fourier equation, the Si-Ge interdiffustion coefficient and the mutual diffusion equation of the Si-Ge, application
In semiconductor technology emulation tool Sentaurus Process, laser crystallization Si-Ge phase counterdiffusion mould again is established by emulation
The Sentaurus Process process simulation of type, the crystallization Si-Ge phase counterdiffusion again of the upper Ge epitaxial layer laser of Si mainly includes following
Process:
S51: defining Si substrate area, divides network, initializes simulating area；
The laser mutual diffusion technique simulation modeling of crystallization Si-Ge again is carried out using Sentaurus Process, it is necessary first to
Si substrate area is defined first, since crystallization needs to solve heat transfer equation and diffusion equation laser again, it is therefore desirable to consider material
Influence of the structure to two kinds of equation solutions.
Compared with impurity or point defect are spread, heat transfer is faster, such as in Si, the diffusion length of heating temperature is 800
DEG C when 20-30 times of interstitial atom diffusion length, therefore, solve Biot-fourier equation and need the structure size more much bigger than diffusion equation.
Sentaurus Process laser heating model provides temporarily extension current structure and then exists in the hope of the method for solving Biot-fourier equation
Restore prototype structure after completing laser or flash anneal, extend geometry downwards and controlled by Boolean parameter ExtendBottom,
The thickness of bottom extension is specified by WaferThickness, and in order to obtain accurate heat distribution, extension thickness is usually arranged as 700
μm, the material of all extended areas is both configured to HeatSubstrate, and the hot attribute of HeatSubstrate material is fixed in inside
Justice onlys demand solution Biot-fourier equation in the region HeatSubstrate for (default value: Si) identical as BulkMaterial material.
Since the characteristic length and thermal diffusion effect of impurity diffusion differ greatly, it is appropriately modified network, from
And can accurate both physical phenomenons of simulation, using fine and close grid near Ge near surface region and the interface Si-Ge,
And rougher grid is used in Si bottom of wafer.
S52: the function of continuous laser heat source is defined, the function is constant at any time and has Gaussian spatial distribution；
The Distribution of laser intensity curve model that Sentaurus Process is provided is to assume that incident beam is spatially equal
Temporal evolution that is even and having similar Gauss, this model are that (or excimer laser or solid-state swash typical pulse laser
Light), and the laser in the present embodiment is continuous laser, it is therefore, described by merging intensity distribution manually with customized function
Function is constant at any time and has Gaussian spatial distribution.
S53: the thermal parameter of definition material, and solve the Biot-fourier equation, the thermal parameter include Si and Ge material density,
Absorption coefficient, specific heat capacity, thermal conductivity and fusing point technological parameter；
Solution formula (9) needs to explicitly define the thermal parameter of laser heat source and material, to obtain after laser irradiation on Si
The Temperature Distribution T (x, y) of Ge epitaxial layer different location.By changing laser crystallization process parameter again, can control on Si outside Ge
Prolong a layer interior temperature distribution, temperature needed for reaching the fusing of Ge epitaxial layer and recrystallization growth.
S54: according to the solving result of the Biot-fourier equation, the temperature of Ge epitaxial layer different location on Si after laser irradiation is obtained
It is distributed T (x, y), determines the value D of the Si-Ge interdiffustion coefficientinter, and solve the mutual diffusion equation of the Si-Ge；
It brings the temperature results T (x, y) that the Biot-fourier equation acquires into formula (7), determines Si-Ge interdiffustion coefficient
Dinter, crystallization belongs to non-uniform heating to laser again, causes temperature in Ge/Si epitaxial layer non-homogeneous, according to Si-Ge phase counterdiffusion system
Number DinterSolve the mutual diffusion equation of Si-Ge.
S55: definition emulation initial temperature is 600 DEG C, and the laser action time is 50ms, obtains laser crystallization Si-Ge phase again
The simulation result of counterdiffusion model.
Specifically, the counterdiffusion of crystallization Si-Ge phase and epitaxial layer temperature are closely related again for laser, and under laser action on Si
Ge epitaxial layer can generate Temperature Distribution heterogeneous, and since temperature is higher, Si-Ge phase counterdiffusion is more obvious, and therefore, laser is brilliant again
Change the mutual diffusion of Si-Ge and the peak temperature of Ge epitaxial layer on Si is closely related.
Fig. 4 is referred to, Fig. 4 is that part fusing occurs for Ge epitaxial layer on a kind of laser irradiation Si provided in an embodiment of the present invention
When temperature profile, wherein Ge epitaxy layer thickness be 400nm.As can be seen from the figure Ge epi-layer surface temperature is more than Ge's
Fusing point (1210K), and the Ge temperature near the interface Si-Ge is not up to fusing point, shows that Ge epitaxial layer fusing recrystallization occurs over just
Fusing recrystallization does not occur near the interface Si-Ge for surface certain thickness.Namely laser irradiation Ge epi-layer surface occurs molten
Change, and the interface Si-Ge is not melted nearby.In this case as shown in figure 5, curve in figure the case where the counterdiffusion of Si-Ge phase
Indicate Ge component of the Ge epitaxial layer at the section x=0 (i.e. at peak temperature) on depth direction on Si, as can be seen from the figure Ge
Ge group is divided into 100% in epitaxial layer and to be divided into the interface 0, Si-Ge concentration distribution precipitous for Ge group in Si substrate, shows in this feelings
Si-Ge phase counterdiffusion does not occur laser for Ge epitaxial layer on crystallization Si again under condition.
Fig. 6 is referred to, Fig. 6 is that all fusings occur for Ge epitaxial layer on a kind of laser irradiation Si provided in an embodiment of the present invention
When temperature profile, wherein Ge epitaxy layer thickness be 400nm.It can be seen from the figure that Ge epi-layer surface peak temperature reaches
The fusing point of Ge is had also exceeded to the temperature of 1314K, and the interface Si-Ge Ge, this shows that the Ge near the interface Si-Ge also has occurred
Melt the process of recrystallization.In this case as shown in fig. 7, enough as can be seen that in x from figure the case where the counterdiffusion of Si-Ge phase
On=0 peak temperature section, a small amount of diffusion has occurred into Ge epitaxial layer for Si atom, and diffusion depth is about 40nm, and Ge
Atom hardly happens diffusion in Si substrate.
S6: it according to the simulation result of the laser mutual diffusion model of crystallization Si-Ge again, establishes Si-Ge and mutually expands and inhibit mould
Type.
Specifically, the mutual diffusion technique simulation result of crystallization Si-Ge can be seen that and passes Ge epitaxial layer laser again from Si
The thermal annealing of system is compared, although crystallization process temperature is high again for laser, action time is extremely short, and Ge epitaxial layer laser is brilliant again on Si
During change, the phase counterdiffusion of Si-Ge atom is hardly happened, when laser action melts the Ge of the interface Si-Ge
When, nearby having a small amount of Si diffuses into Ge epitaxial layer at interface.Therefore, laser crystallization process parameter again is rationally controlled, so that
Upper layer Ge epitaxial layer melts, and nearby thin layer Ge does not melt at the interface Si-Ge, can improve Ge epitaxial layer crystal matter
While amount, Si-Ge phase counterdiffusion of the laser again in crystallization process is effectively avoided.According to laser crystallization Si-Ge phase counterdiffusion again
The simulation result of model further establishes Si-Ge and mutually expands the physical relation of depth and laser again between crystallization process parameter,
Wherein, DDiffIndicate that Si-Ge mutually expands depth, unit nm, PlIndicate laser power density, Pl.0When indicating to occur mutually to expand
Laser power, unit W, for Si-Ge material Pl,0For 64W.
Refer to Fig. 8, Fig. 8 is a kind of laser power provided in an embodiment of the present invention and Si-Ge mutually expands the amount between depth
Change relational graph, as shown, when laser power is lower than 64W, no Si-Ge exclusive problem.
Crystallization Si-Ge mutually expands the method for inhibiting model to the building laser of the present embodiment again, for laser crystallization Si substrate again
There are phase issue of inter-diffusion by Si-Ge during upper Ge epitaxial layer, establish Biot-fourier equation, Si-Ge interdiffustion coefficient and state Si-
The mutual diffusion equation of Ge, by model inference and emulation, establishing laser, crystallization Si-Ge mutually expands inhibition model again, by this hair
The bright model can optimize laser crystallization process parameter again, inhibit laser Si-Ge phase interdiffusion phenomenon in crystallization process again,
Important technology reference is provided for Ge epitaxial layer on laser again the Si substrate of crystallization technology preparation high quality.
Embodiment two
The Si-Ge that the present embodiment is obtained according to the model building method of embodiment one, which mutually expands, inhibits model, proposes a kind of system
The method of standby Ge/Si void substrate, the method can inhibit laser Si-Ge phase interdiffusion phenomenon in crystallization process again, the system
Preparation Method the following steps are included:
Step 1: selection single crystalline Si piece is substrate material；
Step 2: utilizing the magnetron sputtering method Ge epitaxial layer that growth thickness is 400nm on a si substrate；
Step 3: using chemical vapor deposition techniques in the SiO that Ge epi-layer surface deposition thickness is 150nm2Protective layer；
Step 4: will include the single crystal Si substrate, the Ge epitaxial layer and the SiO2The entire material of protective layer adds
Heat is to 600 DEG C, and using laser, crystallization process handles the entire material again, then entire material described in natural cooling,
Wherein, laser is the continuous laser of wavelength 808nm, laser traverse speed 400mm/min, according to above-described embodiment
The Si-Ge that middle method obtains, which mutually expands, inhibits model, obtains laser power parameters, laser power 64W；
Step 5: etching the SiO using dry etch process2Protective layer obtains Ge/Si void substrate.
In the present embodiment, Si substrate layer is with a thickness of 2.75 μm, and the step 1 includes before, using Fdtd Method
FDTD software, establishes SiO2Absorption of the protective layer/Ge epitaxial layer/Si substrate system under 808nm continuous wave laser action, reflection with
Transmission model obtains the Ge epitaxial layer and the SiO according to model emulation result2The thickness parameter of protective layer.
Specifically, SiO2The effect of protective layer is that moment superlaser is avoided to cause to damage to thin Ge epitaxial layer, Yi Jihuan
The oxidation in border.But during laser crystallization process again, it would be desirable that laser penetrates SiO as much as possible2Protective layer, as far as possible
Ground is by Ge epitaxial layer rather than Si substrate absorbs, and therefore, the present embodiment utilizes Fdtd Method FDTD software, establishes
SiO2Absorption, reflection and transmission model under protective layer/sub- 808nm continuous wave laser action of Ge epitaxial layer/Si substrate system, optimization
Determine the Ge epitaxial layer and SiO for being suitable for laser crystallization process again2The thickness related process parameters of protective film.
It refers to Fig. 9 a and Fig. 9 b, Fig. 9 a and Fig. 9 b to be respectively Ge epitaxy layer thickness when being 300nm and 400nm, it is different
SiO2Absorptivity and reflectivity changes curve of the system to 808nm continuous laser under the conditions of overburden cover, wherein RSiO2It indicates
SiO2Reflectivity of the protective layer to continuous laser, AGeIndicate Ge epitaxial layer to the absorptivity of continuous laser.It can be seen from the figure that
With SiO2The increase of thickness degree, SiO2Protective layer takes the lead in increasing after reducing to the reflection of 808nm continuous laser, and Ge epitaxial layer
It takes the lead in reducing after increasing to the absorption of laser, either 300nm Ge epitaxial layer or 400nm Ge epitaxial layer, works as SiO2Protection
When layer is with a thickness of 150nm, Ge epitaxial layer reaches minimum value to the reflectivity of 808nm continuous laser, while Ge epitaxial layer is to sharp
The absorptivity of light reaches maximum value.This shows SiO2When protective layer thickness is 150nm, portion that laser energy passes through reflection loss
Point reach minimum, being thermal energy by Ge epitaxial layer sorption enhanced reaches most for the part of laser crystallization again.Therefore, laser is brilliant again
When changing the preparation thin Ge epitaxial layer of high quality, 150nm SiO2Protective layer optimal thickness.
Further, it is determined that SiO2After the optimal thickness of protective layer, the thickness of optimization Ge epitaxial layer is also needed, this is because
Laser is in SiO2When being propagated in/Ge epitaxial layer/Si substrate system, it may occur however that multipath reflection leads to constructive interference and cancellation in turn
Interference, the thickness of Ge epitaxial layer will affect absorption and reflection of the system to laser.
0, Figure 10 is a kind of SiO provided in an embodiment of the present invention referring to Figure 12When protective layer thickness is 150nm, different Ge
Absorption variations curve of the system to 808nm continuous laser under the conditions of epitaxy layer thickness, wherein AGeIndicate Ge epitaxial layer to even
The absorptivity of continuous laser, ASiIndicate Si substrate layer to the absorptivity of continuous laser.It can be seen from the figure that the absorption of Ge epitaxial layer
Rate is whole as the increase of Ge thickness is in rising trend, and Si substrate to the absorptivity of 808nm continuous laser with Ge epitaxial layer
The increase of thickness is on a declining curve, works as SiO2Protective layer thickness is 150nm, and when Ge epitaxy layer thickness is 400nm, system is to laser
Reflectivity be 12%, Ge epitaxial layer and Si substrate layer be respectively 80% and 4% to the absorptivity of laser, this situation is more managed
Think.
According to above-mentioned SiO2It is absorption of the protective layer/Ge epitaxial layer/Si substrate system under 808nm continuous wave laser action, anti-
The simulation result with transmission model is penetrated, determines the Ge epitaxial layer and SiO for being suitable for 808nm continuous laser2The thickness of protective layer is excellent
Change technological parameter, the Ge/Si void substrate of high quality is prepared.
The preparation method of the Ge/Si void substrate of the present embodiment mutually expands according to Si-Ge and inhibits model, the laser optimized
Crystallization process parameter again, and Fdtd Method FDTD software is used, establish SiO2Protective layer/Ge epitaxial layer/Si substrate body
Absorption, reflection and the transmission model under 808nm continuous wave laser action are tied up to, is suitable for by the simulation analysis to model
The Ge epitaxial layer and SiO of 808nm continuous laser2The thickness optimization technological parameter of protective layer, so that the Ge/ of high quality be prepared
Si void substrate, to improve the performance that subsequent applications Ge epitaxial layer prepares device.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, In
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. crystallization Si-Ge mutually expands the method for inhibiting model to a kind of building laser again characterized by comprising
S1: the mutual diffusion equation of Si-Ge is obtained；
S2: the model of Si-Ge interdiffustion coefficient and concentration and the model of Si-Ge interdiffustion coefficient and temperature are established；
S3: it according to the model of the model and Si-Ge interdiffustion coefficient and temperature of Si-Ge interdiffustion coefficient and concentration, obtains
Si-Ge interdiffustion coefficient；
S4: the Biot-fourier equation of building laser crystallization process again；
S5: it according to the Biot-fourier equation, the Si-Ge interdiffustion coefficient and the mutual diffusion equation of the Si-Ge, is built by emulation
The vertical laser mutual diffusion model of crystallization Si-Ge again；
S6: it according to the simulation result of the laser mutual diffusion model of crystallization Si-Ge again, establishes Si-Ge and mutually expands and inhibit model.
2. the method according to claim 1, wherein the step S1 includes:
S11: obtaining the relationship between concentration gradient and diffusion flux according to Fick's first law,
Wherein, J indicates that diffusion flux, D indicate that diffusion coefficient, C indicate the volumetric concentration of Si or Ge,It indicates concentration gradient, bears
Number-indicate that dispersal direction is the opposite direction of concentration gradient；
S12: obtaining the mass balance expression formula under one-dimensional diffusion flux according to law of conservation,
Wherein, JxIndicate that one-dimensional diffusion flux, Δ x indicate infinitesimal length in the x-direction, SyzIndicate interfacial area,Table
Show function of the concentration about diffusion time,
[J using the Taylor expansion of the flux components along x-axis, in formulax(x)-Jx(x+ Δ x)] it could alternatively be
It obtains,
S13: according to the mass balance expression formula under the relational expression and one-dimensional diffusion flux between concentration gradient and diffusion flux
Taylor expansion obtains the mutual diffusion equation of Si-Ge,
3. according to the method described in claim 2, it is characterized in that, the step S2 includes:
S21: it according to the mutual diffusion equation of Si-Ge, converts to obtain Si-Ge interdiffustion coefficient and concentration using the open country Boltzmann Yu
Expression formula,
Wherein, D (C*) indicate that interdiffustion coefficient when Ge concentration is C*, t indicate that laser crystallization time again, z indicate that diffusion is deep
Degree, C (z) indicate function of the Ge concentration about diffusion depth, zMIndicate the position of the open country Yu plane；
S22: obtaining the expression formula of Si-Ge interdiffustion coefficient and temperature using Arrhenius formula,
Wherein, D0Indicate that the relationship factor of Si-Ge interdiffustion coefficient and concentration, Ea indicate diffusion activation energy, k indicates Bohr hereby
Graceful constant, T indicate temperature.
4. according to the method described in claim 3, it is characterized in that, the expression formula of the Si-Ge interdiffustion coefficient is,
Wherein, D01(xGe) indicate the relationship factor of Si-Ge interdiffustion coefficient and concentration when Ge component≤65%, D01(xGe)=
10-2exp(2.5xGe)cm2s-1, D02(xGe) indicate Ge component > 65% when Si-Ge interdiffustion coefficient and concentration relationship because
Son, D01(xGe)=1.12 × 10-4exp(-12.75xGe)cm2s-1, Ea1=3.1eV, Ea2=3.33eV.
5. according to the method described in claim 4, it is characterized in that, the step S4 includes:
According to the characteristics of non-uniform heating, establishing equation in laser again crystallization process,
Ignore transient termThe Biot-fourier equation for obtaining laser crystallization process again is as follows,
ρCpV ▽ T (x, y)-▽ (k ▽ T (x, y))=Q (x, y),
Wherein, ρ indicates the density of material, CpIndicate that the heat capacity at constant pressure of material, T indicate temperature, temperature unit K, T (x, y) are indicated
The Temperature Distribution of different location, k indicate that the thermal conductivity of material, v indicate that laser traverse speed, Q (x, y) indicate material at different location
Expect that the laser energy absorbed, the expression of the direction x are parallel to the direction of Ge/Si epi-layer surface, the direction y indicates outside perpendicular to Ge/Si
Prolong the direction of layer surface.
6. according to the method described in claim 5, it is characterized in that, the step S5 includes:
S51: defining Si substrate area, divides network, initializes simulating area；
S52: the function of continuous laser heat source is defined, the function is constant at any time and has Gaussian spatial distribution；
S53: the thermal parameter of definition material, and the Biot-fourier equation is solved, the thermal parameter includes the density of Si and Ge material, absorbs
Coefficient, specific heat capacity, thermal conductivity and fusing point technological parameter；
S54: according to the solving result of the Biot-fourier equation, the Temperature Distribution of Ge epitaxial layer different location on Si after laser irradiation is obtained
T (x, y) determines the value D of the Si-Ge interdiffustion coefficientinter, and solve the mutual diffusion equation of the Si-Ge；
S55: definition emulation initial temperature is 600 DEG C, and the laser action time is 50ms, and obtaining laser, crystallization Si-Ge mutually expands again
Dissipate the simulation result of model.
7. according to the method described in claim 6, it is characterized in that, the step S6 includes:
On the basis of the laser simulation result of the mutual diffusion model of crystallization Si-Ge again, establishing Si-Ge, mutually to expand depth brilliant again with laser
Change the physical relation between technological parameter,
Wherein, DDiffIndicate that Si-Ge mutually expands depth, unit nm, PlIndicate laser power density, Pl.0Swashing when indicating to occur mutually to expand
Optical power, unit W, for Si-Ge material Pl,0For 64W.
8. a kind of method for preparing Ge/Si void substrate characterized by comprising
Step 1: selection single crystalline Si piece is substrate material；
Step 2: utilizing the magnetron sputtering method Ge epitaxial layer that growth thickness is 400nm on a si substrate；
Step 3: using chemical vapor deposition techniques in the SiO that Ge epi-layer surface deposition thickness is 150nm2Protective layer；
Step 4: will include the single crystal Si substrate, the Ge epitaxial layer and the SiO2The entire material of protective layer is heated to
600 DEG C, using laser, crystallization process handles the entire material again, then entire material described in natural cooling,
Wherein, laser is the continuous laser of wavelength 808nm, laser traverse speed 400mm/min, according to claim 1 in -7
The Si-Ge that any one method obtains, which mutually expands, inhibits model, obtains laser power parameters, laser power 64W；
Step 5: etching the SiO using dry etch process2Protective layer obtains Ge/Si void substrate.
9. according to the method described in claim 8, it is characterized in that, including: before the step 1
Using Fdtd Method FDTD software, SiO is established2Protective layer/Ge epitaxial layer/Si substrate system is in 808nm continuous laser
Absorption, reflection and transmission model under effect, obtain the Ge epitaxial layer and the SiO according to model emulation result2Protective layer
Thickness parameter.
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