CN110534149A - The single programmable memory of varying storage capacity - Google Patents
The single programmable memory of varying storage capacity Download PDFInfo
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- CN110534149A CN110534149A CN201810506756.1A CN201810506756A CN110534149A CN 110534149 A CN110534149 A CN 110534149A CN 201810506756 A CN201810506756 A CN 201810506756A CN 110534149 A CN110534149 A CN 110534149A
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- storage unit
- programmable memory
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- 230000015654 memory Effects 0.000 title claims abstract description 67
- 230000015556 catabolic process Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002699 waste material Substances 0.000 abstract description 5
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
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Abstract
The present invention provides a kind of single programmable memory of varying storage capacity, comprising: multiple storage units and multiple address bits；Control circuit, for the corresponding relationship according to burning yield configurable address bit and storage unit.The single programmable memory of varying storage capacity of the invention, by control circuit according to the corresponding relationship of burning yield configurable address bit and storage unit, when burning yield is unknown or lower, more candidate storage unit is configured to achieve the purpose that multiple burning improves chip yield and configure less candidate storage unit when burning yield is higher to avoid unnecessary waste, improve memory capacity, chip area is saved, manufacturing cost is reduced, enhances chip applicability.
Description
Technical field
The present invention relates to a kind of single programmable memories of varying storage capacity.
Background technique
In chip manufacturing proces, due to the influence of the various factors such as tool parameters, Temperature Distribution, it will lead between chip
Different degrees of parameter drift is had, as there are deviations for the frequency of oscillator, reference voltage or current value and design value.This will lead
It causes chip to occur nonuniformity problem in application process, to influence product yield, effect is imaged as caused by camera module
Fruit deviation, driving voltage difference of different liquid crystal etc., therefore, it is necessary to be modified to chip special parameter, and will amendment
Value be stored in register, these parameters are read and corrected after chip powers on, so as to improve consistency problem, it is good to improve product
Rate.This function is usually using OTP(One Time Programming) memory, i.e. single programmable memory realizes.
Since the burning process of otp memory is usually destructive, such as dielectric breakdown type (including fuse-type and anti-
Fuse-type) otp memory, burning success rate equally influences chip yield.
Fig. 1 is the otp memory structure of a typical media breakdown type, and metal-oxide-semiconductor A is as storage unit, under certain time
One burning voltage VPP is added to its grid, brings it about breakdown to storage unit one writing, the storage unit of non-burning is " 0 ", is led to
Selection switching tube M0 control is crossed to the read and write of storage unit.
In order to improve burning success rate, spare memory cell usually is increased to same address, this way is in limited core
Sacrifice the memory capacity of otp memory under piece area, the storage unit of redundancy can also occupy biggish chip area, increase at
This.
Fig. 2 is a circuit structure with spare otp memory, which includes multiple otp memories, when some
It, can be by spare in the control spare otp memory of signal behavior when some storage unit burning in otp memory is unsuccessful
Storage unit, until address burning success.The total memory capacity of the structure is the capacity of a single otp memory, but needs to account for
With biggish chip area.
Fig. 3 is another practices well, i.e., in same otp memory, for the multiple storage unit As of same address configuration,
When some storage unit A burning is unsuccessful, spare memory cell A can be selected, until address burning success.In OTP burning
When yield is lower, it can achieve the purpose that multiple burning improves chip yield to different storage unit A burnings by selection,
However when OTP burning yield is higher, more candidate storage unit causes unnecessary waste.
In addition, the burning of otp memory and read access time and burning voltage are all closely related with technological parameter, chip is more
It needs during the new replacement according to the storage address capacity of otp memory, area, spare memory cell quantity and chip yield
Between make compromise selection.
Summary of the invention
The purpose of the present invention is to provide a kind of single programmable memory of varying storage capacity, flexible configuration storage is held
Amount guarantees chip yield, saves chip area, reduces manufacturing cost, enhances chip applicability.
Based on considerations above, the present invention provides a kind of single programmable memory of varying storage capacity, comprising: Duo Gecun
Storage unit and multiple address bits；Control circuit, for the corresponding relationship according to burning yield configurable address bit and storage unit.
Preferably, each storage unit includes at least two writable subelements.
Preferably, when burning yield is higher than preset threshold, it is single that control circuit is configured to the corresponding storage of an address bit
Member.
Preferably, when burning yield is unknown or is lower than preset threshold, it is corresponding at least that control circuit is configured to an address bit
Two storage units.
Preferably, the single programmable memory is dielectric breakdown type single programmable memory.
Preferably, the dielectric breakdown type single programmable memory includes fuse-type single programmable memory and anti-
Fuse-type single programmable memory.
The single programmable memory of varying storage capacity of the invention configures ground according to burning yield by control circuit
Location position and the corresponding relationship of storage unit configure more candidate storage unit when burning yield is unknown or lower to reach
Multiple burning improves the purpose of chip yield, when burning yield is higher, configures less candidate storage unit to avoid need not
The waste wanted improves memory capacity, saves chip area, reduces manufacturing cost, enhances chip applicability.
Detailed description of the invention
By Figure of description and then it is used to illustrate the specific reality of the certain principles of the present invention together with Figure of description
Mode is applied, other feature possessed by the present invention and advantage will be apparent or more specifically illustrated.
Fig. 1 is the structural schematic diagram of existing dielectric breakdown type otp memory；
Fig. 2 is the electrical block diagram of the spare otp memory of existing band；
Fig. 3 is the structural schematic diagram of the existing otp memory with spare memory cell；
Fig. 4 is the structural schematic diagram according to the otp memory of the varying storage capacity of one embodiment of the invention.
Specific embodiment
In the following detailed description of the preferred embodiment, reference is constituted to the appended attached drawing of present invention a part.Institute
Attached attached drawing, which has been illustrated by way of example, can be realized specific embodiment.Exemplary embodiment is not intended to
Exhaustive all embodiments according to the present invention.It is appreciated that without departing from the scope of the present invention, can use other
Embodiment can also carry out the modification of structure or logic.Therefore, it is below specific descriptions and it is unrestricted, and this
The range of invention is defined by the claims appended hereto.
Fig. 4 shows the otp memory of varying storage capacity according to an embodiment of the invention, which includes
Multiple storage units and multiple address bits.Less candidate storage unit only need to be configured, is just enough to ensure that higher chip yield
In preferred embodiment shown in Fig. 4, which includes eight storage unit As, B, C ... H, each storage unit
Including two writable subelements, for example, storage unit A includes two writable subelement A0, A1；Storage unit B includes two
A writable subelement B0, B1；….It will be understood by those skilled in the art that otp memory of the invention can also include other
The storage unit of quantity, each storage unit can also include the writable subelement of other quantity.Preferably, each storage is single
Member includes at least two writable subelements.
In preferred embodiment shown in Fig. 4, which includes two kinds of combination of address bits.Combination 1 includes eight ground
Location position 000,001,010,011,100,101,110,111, for realizing 8bits memory capacity.Combination 2 includes in combination 1
Eight address bits merge the new address bit 000 ' of to be formed four, 001 ', 010 ', 011 ', for realizing 4bits storage
Capacity, wherein address bit 000 ' corresponds to 000 and 100 in combination 1, and address bit 001 ' corresponds to 001 He in combination 1
101 ... combinations 1 are not limited only to this with the corresponding relationship for the address bit for combining 2, herein only as an example, not a limit.This field skill
Art personnel are appreciated that otp memory of the invention can also include the combination of address bits of other quantity, every kind of combination of address bits
It can also include the address bit of other quantity.
In addition, otp memory of the invention further includes control circuit, for according to burning yield configurable address bit and storage
The corresponding relationship of unit.
When OTP burning yield is lower, such as less than preset threshold when, or when first flow burning yield is unknown, control
Circuit issues control signal, selects combination of address bits 2, and memory capacity is 4bits at this time.Then, four address bits respectively correspond
Eight storage units are configured to corresponding two storage units of an address bit.For example, address bit 000 ' corresponds to storage unit
A and E, address bit 001 ' correspond to storage unit B and F ... due to each storage unit include two writable subelements,
Each address bit can at most carry out four burnings.That is, when burning yield is unknown or relatively low, it can be by eachly
Location position configures more candidate storage unit, to achieve the purpose that multiple burning improves chip yield.
When OTP burning yield is higher, such as when higher than preset threshold, control circuit issues control signal, selects address bit
Combination 1, memory capacity is 8bits at this time.Then, eight address bits respectively correspond eight storage units, that is, are configured to a ground
The corresponding storage unit in location position.For example, address bit 000 corresponds to storage unit A, address bit 001 corresponds to storage unit B ...
Since each storage unit includes two writable subelements, each address bit can at most carry out burning twice, work as burning
When yield is higher, each address bit need to only configure less candidate storage unit, just be enough to ensure that higher chip yield, simultaneously
Unnecessary waste is avoided, memory capacity is improved, saves chip area, reduces manufacturing cost, it is suitable to enhance chip
The property used.
As it can be seen that the present invention realizes the reasonable distribution and control to OTP address bit and storage unit by control circuit, realize
A kind of otp memory structure of varying storage capacity.When burning yield is unknown or relatively low, it is capable of providing and more alternatively deposits
Storage unit carries out multiple burning to guarantee chip yield, when burning yield is higher, need to only configure less candidate storage unit
It is just enough to ensure that chip yield, while can flexibly increase OTP memory capacity, so that more register calibration bits are provided,
To adapt to different chip application environments.
Preferably, the single programmable memory is dielectric breakdown type single programmable memory.
Preferably, the dielectric breakdown type single programmable memory includes fuse-type single programmable memory and anti-
Fuse-type single programmable memory.
The single programmable memory of varying storage capacity of the invention configures ground according to burning yield by control circuit
Location position and the corresponding relationship of storage unit configure more candidate storage unit when burning yield is unknown or lower to reach
Multiple burning improves the purpose of chip yield, when burning yield is higher, configures less candidate storage unit to avoid need not
The waste wanted improves memory capacity, saves chip area, reduces manufacturing cost, enhances chip applicability.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
How from the point of view of, the present embodiments are to be considered as illustrative and not restrictive.In addition, it will be evident that one word of " comprising " not
Exclude other elements and steps, and wording "one" be not excluded for plural number.The multiple element stated in device claim can also
To be implemented by one element.The first, the second equal words are used to indicate names, and are not indicated any particular order.
Claims (6)
1. a kind of single programmable memory of varying storage capacity characterized by comprising
Multiple storage units and multiple address bits；
Control circuit, for the corresponding relationship according to burning yield configurable address bit and storage unit.
2. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that each storage unit
Including at least two writable subelements.
3. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that when burning yield is high
In preset threshold, control circuit is configured to the corresponding storage unit of an address bit.
4. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that when burning yield not
Know or lower than preset threshold, control circuit is configured to corresponding at least two storage units of an address bit.
5. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that the single can be compiled
Journey memory is dielectric breakdown type single programmable memory.
6. the single programmable memory of varying storage capacity as claimed in claim 5, which is characterized in that the dielectric is hit
The type single programmable memory of wearing includes fuse-type single programmable memory and anti-fuse type single programmable memory.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810506756.1A CN110534149A (en) | 2018-05-24 | 2018-05-24 | The single programmable memory of varying storage capacity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810506756.1A CN110534149A (en) | 2018-05-24 | 2018-05-24 | The single programmable memory of varying storage capacity |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1244712A (en) * | 1998-08-07 | 2000-02-16 | 三菱电机株式会社 | Dynamic semiconductor memory with low power consumption mode |
| CN1776909A (en) * | 2004-10-14 | 2006-05-24 | 美国博通公司 | Integrated circuit chip programmable and operation method |
| JP2009076182A (en) * | 2007-09-25 | 2009-04-09 | Sony Corp | Semiconductor memory and liquid crystal driving device provided therewith |
| US20160172053A1 (en) * | 2014-12-15 | 2016-06-16 | Samsung Electronics Co., Ltd. | Otp memory capable of performing multi-programming and semiconductor memory device including the same |
| CN107123443A (en) * | 2016-02-24 | 2017-09-01 | 三星电子株式会社 | Disposable programmable memory and its method for writing data |
| CN208444601U (en) * | 2018-05-24 | 2019-01-29 | 格科微电子（上海）有限公司 | The single programmable memory of varying storage capacity |
-
2018
- 2018-05-24 CN CN201810506756.1A patent/CN110534149A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1244712A (en) * | 1998-08-07 | 2000-02-16 | 三菱电机株式会社 | Dynamic semiconductor memory with low power consumption mode |
| CN1776909A (en) * | 2004-10-14 | 2006-05-24 | 美国博通公司 | Integrated circuit chip programmable and operation method |
| JP2009076182A (en) * | 2007-09-25 | 2009-04-09 | Sony Corp | Semiconductor memory and liquid crystal driving device provided therewith |
| US20160172053A1 (en) * | 2014-12-15 | 2016-06-16 | Samsung Electronics Co., Ltd. | Otp memory capable of performing multi-programming and semiconductor memory device including the same |
| CN107123443A (en) * | 2016-02-24 | 2017-09-01 | 三星电子株式会社 | Disposable programmable memory and its method for writing data |
| CN208444601U (en) * | 2018-05-24 | 2019-01-29 | 格科微电子（上海）有限公司 | The single programmable memory of varying storage capacity |
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