CN110527956A - A kind of aluminium-scandium alloy sputtering target material and preparation method thereof - Google Patents
A kind of aluminium-scandium alloy sputtering target material and preparation method thereof Download PDFInfo
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- CN110527956A CN110527956A CN201810504228.2A CN201810504228A CN110527956A CN 110527956 A CN110527956 A CN 110527956A CN 201810504228 A CN201810504228 A CN 201810504228A CN 110527956 A CN110527956 A CN 110527956A
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- aluminium
- scandium
- scandium alloy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of aluminium-scandium alloy sputtering target materials and preparation method thereof, belong to high-performance aluminum scandium alloy target technical field.In the aluminium-scandium alloy target, the content of scandium element is 5at%-50at%, remaining is aluminium element.Preparation method includes: that step 1 stock, step 2 melting ingot casting, step 3 are forged and beaten or rolling, step 4 sample detection, step 5 milling cleaning, step 6 are vacuum-packed.The present invention uses vacuum magnetic suspension smelting furnace and quick cast rapid condensation technique, prepares the thickness of aluminium-scandium alloy target: 2-35mm, the content of consistency 99.9%, scandium element is 5at%-50at%, remaining is aluminium element.Realize that preparation method is easy to operate, alloy is uniform, expensive metal scandium utilization rate is high, is conducive to industrial application.The characteristic that homogeneity of ingredients is good and subsequent machinability is good, meets the needs of semiconductor and special dimension sputtering target material.Overcome the deficiencies in the prior art.
Description
Technical field
The present invention relates to high-performance aluminum scandium alloy target technical field more particularly to a kind of aluminium-scandium alloy sputtering target material and its
Preparation method.
Background technique
Certain scandium is added in aluminium, can be played refinement crystal grain, be improved recrystallization temperature, improve corrosion resistance, improve intensity
And the effects of plasticity, therefore the comprehensive performance that aluminium-scandium alloy has high intensity, corrosion resistance, high temperature resistant and solderability good, it is navigating
The fields such as the hard-core technologies such as empty space flight, nuclear energy engineering, semiconductor field and communications and transportation, household electrical appliance, which have, widely answers
With.High speed development and various countries' attention that key area is studied with critical material with science and technology, to aluminium-scandium alloy target because
This, researchs and develops a kind of method that is simple, quickly preparing aluminium-scandium alloy target, semiconductor and key area is sputtered
The development of target is of great practical significance.
The present invention uses vacuum magnetic suspension smelting furnace and Rapid casting process, prepares the thickness of aluminium-scandium alloy target: 2-
The content of 35mm, consistency 99.9%, scandium element are 5at%-50at%, remaining is aluminium element.Realize preparation method operation letter
List, alloy are uniform, and expensive metal scandium utilization rate is high, is conducive to industrial application.Homogeneity of ingredients is good and subsequent machinability
Good characteristic, meets the needs of semiconductor and special dimension sputtering target material.Overcome the deficiencies in the prior art.
Summary of the invention
The purpose of the present invention is to provide a kind of aluminium-scandium alloy sputtering target materials and preparation method thereof, rationally and effectively solve
The problem that the aluminium-scandium alloy melting difficulty of the prior art is big, scandium content is low, technique is miscellaneous, long preparation period, alloy consistency are low.
The present invention adopts the following technical scheme:
A kind of aluminium-scandium alloy sputtering target material and preparation method thereof, it is characterised in that: scandium in the aluminium-scandium alloy sputtering target material
The content of element is 5at%-50at%, and surplus is aluminium element, and the consistency of the aluminium-scandium alloy sputtering target material is 99.9%, thick
Degree is 2-35mm；
The preparation method of the aluminium-scandium alloy sputtering target material the following steps are included:
Step 1: stock: by the aluminium scandium element percentage composition ratio Al (50at%- of the aluminium-scandium alloy sputtering target material
95at%): the quality of raw material aluminium needed for Sc (50at%-5at%) calculates single furnace powder, raw material scandium weighs single furnace respectively
Raw material aluminium and single furnace raw material scandium are spare,
Step 2: melting ingot casting: single furnace raw material aluminium and single furnace raw material scandium are put into vacuum magnetic suspension smelting furnace, it will
The list furnace raw material aluminium and the complete alloying of single furnace raw material scandium, then aluminium-scandium alloy target is prepared using Rapid casting process casting
Ingot,
Beat or roll Step 3: forging: the aluminium-scandium alloy target ingot prepared by casting is carried out using pneumatic hammer or milling train
It forges and beats or be rolled into required specification, prepare aluminium-scandium alloy target base,
Step 4: sample detection: by aluminium-scandium alloy target base sampling using TCP and metallography microscope instrument carry out crystal grain,
The coherent detection of ingredient,
Step 5: milling is cleaned: will test the qualified aluminium-scandium alloy target base by drawing size requirements progress vehicle,
The machinings such as milling, mill, then cleaned with ultrasonic equipment,
Step 6: vacuum packaging: being vacuum-packed using dedicated vacuum bag, constitute a kind of aluminium-scandium alloy sputtering target material
And preparation method thereof.
Further, the technical parameter of described aluminium-scandium alloy sputtering target material and preparation method thereof are as follows: the raw material aluminium it is pure
Degree is 99.9995%；Purity >=99.95% of the raw material scandium；The scandium content of the aluminium-scandium alloy target ingot is 5at%-
50at%；The pressure vacuumized again is -1 × 10-2Mpa to -1 × 10-3Mpa。
The method have the benefit that:
The invention discloses a kind of aluminium-scandium alloy sputtering target materials and preparation method thereof, rationally and effectively solve the prior art
Aluminium-scandium alloy melting difficulty is big, scandium content is low, technique is miscellaneous, long preparation period, alloy consistency are low problem.
The present invention uses vacuum magnetic suspension smelting furnace and Rapid casting process, prepares the thickness of aluminium-scandium alloy target: 2-
The content of 35mm, consistency 99.9%, scandium element are 5at%-50at%, remaining is aluminium element.Realize preparation method operation letter
List, alloy are uniform, and expensive metal scandium utilization rate is high, is conducive to industrial application.Homogeneity of ingredients is good and subsequent machinability
Good characteristic, meets the needs of semiconductor and special dimension sputtering target material.Overcome the deficiencies in the prior art.
Specific embodiment
By the following description of the embodiment, the public understanding present invention will more be facilitated, but can't should be by Shen
Given specific embodiment of asking someone is considered as the limitation to technical solution of the present invention, any to determine brake component or technical characteristic
Justice be changed and/or to overall structure make form and immaterial transformation is regarded as technical solution of the present invention and is limited
Protection scope.
Embodiment:
A kind of aluminium-scandium alloy sputtering target material and preparation method thereof, it is characterised in that: scandium in the aluminium-scandium alloy sputtering target material
The content of element is 5at%-50at%, and surplus is aluminium element, and the consistency of the aluminium-scandium alloy sputtering target material is 99.9%, thick
Degree is 2-35mm；
The preparation method of the aluminium-scandium alloy sputtering target material the following steps are included:
Step 1: stock: by the aluminium scandium element percentage composition ratio Al (50at%- of the aluminium-scandium alloy sputtering target material
95at%): the quality of raw material aluminium needed for Sc (50at%-5at%) calculates single furnace powder, raw material scandium weighs single furnace respectively
Raw material aluminium and single furnace raw material scandium are spare,
Step 2: melting ingot casting: single furnace raw material aluminium and single furnace raw material scandium are put into vacuum magnetic suspension smelting furnace, it will
The list furnace raw material aluminium and the complete alloying of single furnace raw material scandium, then aluminium-scandium alloy target is prepared using Rapid casting process casting
Ingot,
Beat or roll Step 3: forging: the aluminium-scandium alloy target ingot prepared by casting is carried out using pneumatic hammer or milling train
It forges and beats or be rolled into required specification, prepare aluminium-scandium alloy target base,
Step 4: sample detection: by aluminium-scandium alloy target base sampling using TCP and metallography microscope instrument carry out crystal grain,
The coherent detection of ingredient,
Step 5: milling is cleaned: will test the qualified aluminium-scandium alloy target base by drawing size requirements progress vehicle,
The machinings such as milling, mill, then cleaned with ultrasonic equipment,
Step 6: vacuum packaging: being vacuum-packed using dedicated vacuum bag, constitute a kind of aluminium-scandium alloy sputtering target material
And preparation method thereof.
Further, the technical parameter of described aluminium-scandium alloy sputtering target material and preparation method thereof are as follows: the raw material aluminium it is pure
Degree is 99.9995%；Purity >=99.95% of the raw material scandium；The scandium content of the aluminium-scandium alloy target ingot is 5at%-
50at%；The pressure vacuumized again is -1 × 10-2Mpa to -1 × 10-3Mpa.Complete a kind of aluminium-scandium alloy sputtering
The implementation of target and preparation method thereof.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention,
Those skilled in the art can make various corresponding changes and modifications according to the present invention, but these it is corresponding change and
Deformation all should fall within the scope of protection of the appended claims of the present invention.
Claims (2)
1. a kind of aluminium-scandium alloy sputtering target material and preparation method thereof, it is characterised in that: scandium member in the aluminium-scandium alloy sputtering target material
The content of element is 5at%-50at%, and surplus is aluminium element, and the consistency of the aluminium-scandium alloy sputtering target material is 99.9%, thickness
For 2-35mm；
The preparation method of the aluminium-scandium alloy sputtering target material the following steps are included:
Step 1: stock: by the aluminium scandium element percentage composition ratio Al (50at%-95at%) of the aluminium-scandium alloy sputtering target material:
The quality of raw material aluminium needed for Sc (50at%-5at%) calculates single furnace powder, raw material scandium, weigh respectively single furnace raw material aluminium and
Single furnace raw material scandium is spare,
Step 2: melting ingot casting: single furnace raw material aluminium and single furnace raw material scandium are put into vacuum magnetic suspension smelting furnace, it will be described
Single furnace raw material aluminium and the complete alloying of single furnace raw material scandium, then aluminium-scandium alloy target ingot is prepared using Rapid casting process casting,
Beat or roll Step 3: forging: the aluminium-scandium alloy target ingot that will cast preparation, which forge using pneumatic hammer or milling train, to be beaten
Or it is rolled into required specification, aluminium-scandium alloy target base is prepared,
Step 4: sample detection: aluminium-scandium alloy target base sampling is carried out crystal grain, ingredient using TCP and metallography microscope instrument
Coherent detection,
Step 5: milling is cleaned: will test the qualified aluminium-scandium alloy target base by drawing size requirement and carry out vehicle, milling, mill
It is cleaned Deng machining, then with ultrasonic equipment,
Step 6: vacuum packaging: be vacuum-packed using dedicated vacuum bag, constitute a kind of aluminium-scandium alloy sputtering target material and its
Preparation method.
2. a kind of aluminium-scandium alloy sputtering target material and preparation method thereof according to claim 1, it is characterised in that: the aluminium scandium closes
The technical parameter of golden sputtering target material and preparation method thereof are as follows: the purity of the raw material aluminium is 99.9995%；The raw material scandium it is pure
Degree >=99.95%；The scandium content of the aluminium-scandium alloy target ingot is 5at%-50at%；The pressure vacuumized again be -1 ×
10-2Mpa to -1 × 10-3Mpa。
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| CN201810504228.2A CN110527956A (en) | 2018-05-23 | 2018-05-23 | A kind of aluminium-scandium alloy sputtering target material and preparation method thereof |
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| CN201810504228.2A CN110527956A (en) | 2018-05-23 | 2018-05-23 | A kind of aluminium-scandium alloy sputtering target material and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112962072A (en) * | 2021-02-02 | 2021-06-15 | 邱从章 | Low-oxygen large-size aluminum-based intermetallic compound-containing alloy target material and preparation method thereof |
| CN113373414A (en) * | 2020-02-25 | 2021-09-10 | 湖南东方钪业股份有限公司 | Preparation method and application of aluminum-scandium alloy sputtering target |
| CN114134353A (en) * | 2021-11-25 | 2022-03-04 | 宁波江丰电子材料股份有限公司 | Aluminum-scandium alloy and preparation method and application thereof |
| CN114774865A (en) * | 2022-04-15 | 2022-07-22 | 宁波江丰电子材料股份有限公司 | Aluminum-scandium alloy target material and preparation method thereof |
| CN115595540A (en) * | 2022-10-21 | 2023-01-13 | 基迈克材料科技（苏州）有限公司（Cn） | Preparation process of aluminum-scandium alloy target material |
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| EP1548146A1 (en) * | 2003-12-22 | 2005-06-29 | Seco Tools Ab | Method of coating a cutting tool |
| CN104883149A (en) * | 2014-02-28 | 2015-09-02 | 安华高科技通用Ip(新加坡)公司 | Scandium-aluminum alloy sputtering targets |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113373414A (en) * | 2020-02-25 | 2021-09-10 | 湖南东方钪业股份有限公司 | Preparation method and application of aluminum-scandium alloy sputtering target |
| CN113373414B (en) * | 2020-02-25 | 2023-10-27 | 湖南东方钪业股份有限公司 | Preparation method and application of aluminum scandium alloy sputtering target |
| CN112962072A (en) * | 2021-02-02 | 2021-06-15 | 邱从章 | Low-oxygen large-size aluminum-based intermetallic compound-containing alloy target material and preparation method thereof |
| CN114134353A (en) * | 2021-11-25 | 2022-03-04 | 宁波江丰电子材料股份有限公司 | Aluminum-scandium alloy and preparation method and application thereof |
| CN114774865A (en) * | 2022-04-15 | 2022-07-22 | 宁波江丰电子材料股份有限公司 | Aluminum-scandium alloy target material and preparation method thereof |
| CN114774865B (en) * | 2022-04-15 | 2023-09-08 | 宁波江丰电子材料股份有限公司 | Aluminum scandium alloy target and preparation method thereof |
| CN115595540A (en) * | 2022-10-21 | 2023-01-13 | 基迈克材料科技（苏州）有限公司（Cn） | Preparation process of aluminum-scandium alloy target material |
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