CN110518805B - DCDC boost converter and method for realizing full-range soft switching - Google Patents
DCDC boost converter and method for realizing full-range soft switching Download PDFInfo
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- CN110518805B CN110518805B CN201910889784.0A CN201910889784A CN110518805B CN 110518805 B CN110518805 B CN 110518805B CN 201910889784 A CN201910889784 A CN 201910889784A CN 110518805 B CN110518805 B CN 110518805B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a DCDC boost converter and a method for realizing full-range soft switching, the DCDC boost converter comprises a full-bridge circuit at an input side, a high-frequency transformer and a rectifying circuit at an output side, wherein the full-bridge circuit comprises MOS (metal oxide semiconductor) tubes S1, S2, S3 and S4, and the rectifying circuit comprises MOS tubes S5, S6 and diodes D1 and D2. The high-frequency transformer is connected between the full-bridge circuit and the rectifying circuit, the positive and negative ends of a primary coil of the high-frequency transformer are respectively connected between the MOS tube S1 and the MOS tube S2 and between the MOS tube S3 and the MOS tube S4, and the positive and negative ends of a secondary coil of the high-frequency transformer are respectively connected between the diode D1 and the MOS tube S5 and between the diode D2 and the MOS tube S6. Compared with the prior art, the method for realizing the full-range soft switch of the converter can realize the characteristic of realizing the soft switch in the full range of the load under the condition of not sacrificing the energy conversion efficiency, and through a comparison experiment, the structure and the method can improve the energy conversion efficiency by 2% -4%, and reduce the waste of redundant energy.
Description
Technical Field
The invention relates to the field of electronic technology application, in particular to a DCDC boost converter with strong practicability and a method for realizing full-range soft switching.
Background
The traditional full-bridge DCDC boost converter has the advantages of simple circuit, small number of elements, various and flexible control methods, wide input and output range, wide load range, capability of realizing soft switching under partial load condition, excellent electric energy conversion efficiency, capability of realizing boost and buck and the like, and is widely applied to various occasions.
The efficiency of electrical energy conversion is one of the important properties of power electronic converters. Switching losses in semiconductor power devices are often a significant cause of limiting the improvement in electrical energy conversion efficiency. The soft switching technology can greatly reduce the switching loss so as to achieve the purpose of improving the electric energy conversion efficiency. The traditional full-bridge DCDC boost converter can be matched with the current state of the power semiconductor in the corresponding magnetic element before and after the power semiconductor is turned on or turned off to realize soft switching. However, the disadvantages are also evident, and this soft switching technique can only be implemented when the current in the magnetic element is within a certain range. Beyond this range, the power semiconductor may still be turned on or off under high current or high voltage conditions. The traditional solution is to change the parameters of the magnetic element and expand the soft switching range as much as possible within a given load range. However, this solution still does not cover the full load range and has significant side effects-increasing the conduction losses of the power device and the magnetic element. So that the effect of improving the comprehensive electric energy conversion efficiency of the system is limited finally.
Disclosure of Invention
The technical task of the invention is to provide the DCDC boost converter with strong practicability and the method for realizing the full-range soft switch based on the DCDC boost converter aiming at the defects.
The utility model provides a DCDC boost converter, includes full bridge circuit, high frequency transformer, the rectifier circuit of output side of input side, all be configured with the MOS pipe in full bridge circuit, the rectifier circuit, this MOS pipe is by main channel, set up body diode, the output electric capacity between source and drain electrode, wherein:
The full-bridge circuit comprises MOS tubes S1, S2, S3 and S4, wherein the MOS tube S1 is connected between an input side positive electrode and the MOS tube S2; the MOS tube S2 is connected between the input side negative electrode and the MOS tube S1; the MOS tube S3 is connected between the positive electrode of the input side and the MOS tube S4; the MOS tube S4 is connected between the input side negative electrode and the MOS tube S3;
the rectification circuit comprises MOS (metal oxide semiconductor) tubes S5 and S6 and diodes D1 and D2, and the diode D1 is connected between the positive electrode of the output side and the MOS tube S5; the MOS tube S5 is connected between the diode D1 and the negative electrode of the output side; the diode D2 is connected between the positive electrode of the output side and the MOS tube S6; the MOS tube S6 is connected between the diode D2 and the negative electrode of the output side;
The high-frequency transformer is connected between the full-bridge circuit and the rectifying circuit, the positive and negative ends of a primary coil of the high-frequency transformer are respectively connected between the MOS tube S1 and the MOS tube S2 and between the MOS tube S3 and the MOS tube S4, and the positive and negative ends of a secondary coil of the high-frequency transformer are respectively connected between the diode D1 and the MOS tube S5 and between the diode D2 and the MOS tube S6.
A method for realizing full-range soft switching based on DCDC boost converter comprises the following implementation processes:
firstly, switching on MOS tubes S1 and S3 at an input side and switching on MOS tubes S5 and S6 at an output side, wherein the voltage across primary and secondary coils of a high-frequency transformer is 0;
Step two, the MOS tube S3 is turned off, the MOS tube S4 is turned on, the voltage across the primary side coil of the high-frequency transformer is positive input voltage, the voltage across the secondary side coil of the high-frequency transformer is 0, and leakage inductance of the high-frequency transformer is charged;
step three, the MOS tube S5 is turned off, the diode D1 is conducted, the voltage across the secondary coil of the high-frequency transformer is positive output voltage, the leakage inductance of the transformer discharges, and energy is transferred to the output side;
step four, the MOS tube S1 is turned off, the MOS tube S5 is turned on, the MOS tube S2 is turned on at zero voltage, the voltage across the secondary side coil of the high-frequency transformer becomes 0, and the energy transmission is finished;
step five, switching off the MOS tube S4, switching on the MOS tube S3 at zero voltage, wherein the voltage across the primary coil of the high-frequency transformer is negative input voltage, the voltage across the secondary coil is 0, and the leakage inductance of the high-frequency transformer is charged;
step six, the MOS tube S6 is turned off, the diode D2 is conducted, the voltage across the secondary coil of the high-frequency transformer is negative output voltage, the leakage inductance of the transformer discharges, and energy is transferred to the output side;
And step seven, switching off the MOS transistor S2, switching on the MOS transistor S6, ending the rectification process, completing one switching cycle, and returning to the step one in the next switching cycle.
In the second step, when the MOS tube S3 is turned off, the negative leakage inductance current of the high-frequency transformer starts to discharge the output capacitor of the MOS tube S4, charges the output capacitor of the MOS tube S3, when the output capacitor voltage of the MOS tube S4 discharges to 0v, the body diode of the MOS tube S4 is turned on, then the gate electrode of the MOS tube S4 is driven to a given state, the MOS tube S4 is turned on at zero voltage, the primary side coil of the high-frequency transformer is at a positive input voltage, the secondary side coil of the high-frequency transformer is at a voltage of 0, and the leakage inductance of the high-frequency transformer is charged at this stage and reaches a maximum value.
In the third step, the input side keeps the MOS transistors S1 and S4 on, the voltage across the primary winding of the high-frequency transformer is a forward input voltage, the output side MOS transistor S6 keeps on, the leakage inductance current of the high-frequency transformer is forward, the diode D1 is turned on, energy is transferred from the input side to the output side, the voltage across the secondary winding of the high-frequency transformer is a forward output voltage, and in this process, the leakage inductance of the high-frequency transformer discharges and is reduced to a forward current which is approximately zero.
In the fourth step, the MOS tube S1 is turned off, the MOS tube S5 is turned on, the voltage across the secondary coil of the high-frequency transformer becomes 0, and the energy transmission is finished; the input side, the leakage inductance current with the forward direction being approximately zero starts to discharge the output capacitor of the MOS tube S2, charges the output capacitor of the MOS tube S1, and when the voltage of the output capacitor of the MOS tube S2 is discharged to 0V, the body diode of the MOS tube S2 is conducted; and the gate electrode of the OS tube S2 is driven to be given, and the MOS tube S2 realizes zero-voltage on. At this stage, the input side MOS transistors S2, S4 are turned on, and the output side MOS transistors S5 and S6 are turned on. Therefore, the voltage across the primary coil and the secondary coil of the high-frequency transformer is 0, the leakage inductance does not perform charge and discharge actions, the current is kept unchanged, the current is the leakage inductance current with the forward direction being approximately zero, and the circuit does not perform energy transfer at the moment.
In the fifth step, the MOS transistor S4 is turned off, and the leakage inductance current with the forward direction being approximately zero starts to discharge the output capacitor of S3, and charges the output capacitor of S4. When the output capacitor voltage of the MOS tube S3 is discharged to 0V, the body diode of the MOS tube S3 is conducted; the gate electrode of the MOS tube S3 is driven and given, and the MOS tube S3 realizes zero-voltage on; the MOS tubes S2 and S3 are all on, the voltage across the primary side coil of the high-frequency transformer is negative input voltage, the MOS tubes S5 and S6 on the output side still keep on, the voltage across the secondary side coil of the high-frequency transformer is 0, the leakage inductance is charged at the stage, and the leakage inductance current reaches the negative maximum value at the time t 3.
In the step six, the input side keeps the MOS transistors S2 and S3 open, and the voltage across the primary coil of the high-frequency transformer is negative input voltage; the MOS tube S5 at the output side is kept on, the MOS tube S6 is turned off, the leakage inductance current of the high-frequency transformer is negative at the moment, the diode D2 is turned on, energy is transferred from the input side to the output side, the voltage across the secondary side coil of the high-frequency transformer is negative output voltage, and in the step, the leakage inductance of the high-frequency transformer discharges and the current is reduced to be approximately zero in the negative direction.
In the seventh step, the MOS tube S2 is turned off, the MOS tube S6 is turned on, the voltage across the secondary coil of the high-frequency transformer becomes 0, and the rectification process is finished; on the input side, the leakage inductance current with the negative direction being approximately zero starts to discharge the output capacitor of the MOS tube S1, charges the output capacitor of the MOS tube S2, and when the voltage of the output capacitor of the MOS tube S1 is discharged to 0V, the body diode of the MOS tube S1 is conducted.
The DCDC boost converter and the method for realizing the full-range soft switch have the following advantages:
compared with the prior art, the DCDC converter and the method for realizing the full-range soft switch based on the same solve the problems that the soft switch range of the traditional full-bridge DCDC converter is narrow, and meanwhile, the magnetic element is required to be conducted with large current to maintain the soft switch performance, so that the electric energy conversion efficiency is not obviously improved. Through a comparison experiment, the structure and the method can improve the energy conversion efficiency by 2% -4%, reduce the waste of redundant energy, have strong practicability and wide application range, and are easy to popularize.
Drawings
For a clearer description of embodiments of the invention or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a MOS transistor model in the prior art.
Fig. 2 is a schematic diagram of a MOS hard-on waveform.
Fig. 3 is a schematic diagram of a zero-current turn-on waveform of the MOS transistor.
Fig. 4 is a circuit topology diagram for implementing the present invention.
FIG. 5 is a schematic control diagram of the method of the present invention.
Detailed Description
In order to better understand the aspects of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
A DCDC boost converter comprises a full-bridge circuit at an input side, a high-frequency transformer and a rectifying circuit at an output side, wherein MOS (metal oxide semiconductor) tubes are arranged in the full-bridge circuit and the rectifying circuit, each MOS tube comprises a main channel, a body diode arranged between a source electrode and a drain electrode and an output capacitor, wherein a specific structure diagram of each MOS tube is shown in figure 1, G is a grid electrode, D is a source electrode, and S is a drain electrode. For the MOS tube structure, the soft switching principle is described in detail, as shown in fig. 2, when the hard switch is turned on, the MOS tube starts to flow current ids when the gate driving voltage reaches the threshold on voltage, and when the gate driving voltage reaches the Miller platform, the current ids rises to the maximum value, and the voltage between the gate and the source starts to drop. At the end of the miller plateau, the gate-source voltage drops to 0. The hatched area shown in fig. 2 is the voltage-current overlapping area of the MOS transistor, which is the power loss when on. And the arrows in fig. 4 point to waveforms of the MOS transistors when the soft switch is turned on. Referring to fig. 3, before the gate driving voltage is given, the output capacitor of the MOS transistor is discharged by the negative current (-ids), and after the discharging voltage drops to 0, the body diode starts to conduct. After that, gate drive is applied, and the MOS transistor current changes from negative to positive. This process is referred to as zero voltage on, i.e., soft switching is achieved. The condition for realizing zero voltage on is that the energy of the negative current is enough to completely discharge the output capacitor.
Aiming at the principle, the invention has the following realization structure:
As shown in fig. 4, the full-bridge circuit includes MOS transistors S1, S2, S3, S4, where the MOS transistor S1 is connected between the input side positive electrode and the MOS transistor S2; the MOS tube S2 is connected between the input side negative electrode and the MOS tube S1; the MOS tube S3 is connected between the positive electrode of the input side and the MOS tube S4; the MOS tube S4 is connected between the input side negative electrode and the MOS tube S3;
the rectification circuit comprises MOS (metal oxide semiconductor) tubes S5 and S6 and diodes D1 and D2, and the diode D1 is connected between the positive electrode of the output side and the MOS tube S5; the MOS tube S5 is connected between the diode D1 and the negative electrode of the output side; the diode D2 is connected between the positive electrode of the output side and the MOS tube S6; the MOS tube S6 is connected between the diode D2 and the negative electrode of the output side;
The high-frequency transformer is connected between the full-bridge circuit and the rectifying circuit, the positive and negative ends of a primary coil of the high-frequency transformer are respectively connected between the MOS tube S1 and the MOS tube S2 and between the MOS tube S3 and the MOS tube S4, and the positive and negative ends of a secondary coil of the high-frequency transformer are respectively connected between the diode D1 and the MOS tube S5 and between the diode D2 and the MOS tube S6.
The high-frequency transformer is connected with an input full-bridge side and a diode output side, the transformation ratio is 1:n, the secondary side excitation inductance is Lm, and the leakage inductance is Lr.
In the full-bridge circuit, the drains of the MOS transistors S1 and S3 are connected with the positive electrode of the input side, and the sources of the MOS transistors S1 and S3 are respectively connected with the drains of the MOS transistors S2 and S4; the sources of the MOS transistors S2 and S4 are connected with the negative electrode of the input side; the drains of the MOS tubes S1 and S3 are also connected with one end of a capacitor C1, and the other end of the capacitor C1 is connected with the sources of the MOS tubes S2 and S4.
In the rectifying circuit, the anode of a diode D1 is connected with one end of a secondary coil of the high-frequency transformer and the drain electrode of a MOS tube S5, and the cathode of the diode D1 is connected with the anode of an output side; the anode of the diode D2 is connected with the other end of the secondary coil of the high-frequency transformer and the drain electrode of the MOS tube S6, and the cathode of the diode D2 is connected with the anode of the output side; the sources of the MOS transistors S5 and S6 are connected with the negative electrode of the output side; the cathodes of the diodes D1 and D2 are also connected with one end of a capacitor C2, and the other end of the capacitor C2 is connected with the sources of the MOS transistors S5 and S6.
The invention discloses a method for realizing full-range soft switching based on a DCDC boost converter. The amplitude of the triangular wave current at the position approximately 0 is not influenced by the input and output voltage and the load, and full-range soft switching can be realized. Compared with the traditional mode that the soft switching can be realized by utilizing the current amplitude of the magnetic element under the partial load condition, the soft switching condition of the MOS tube is not limited by the load condition any more.
The implementation process is as follows:
firstly, switching on MOS tubes S1 and S3 at an input side and switching on MOS tubes S5 and S6 at an output side, wherein the voltage across primary and secondary coils of a high-frequency transformer is 0;
Step two, the MOS tube S3 is turned off, the MOS tube S4 is turned on, the voltage across the primary side coil of the high-frequency transformer is positive input voltage, the voltage across the secondary side coil of the high-frequency transformer is 0, and leakage inductance of the high-frequency transformer is charged;
step three, the MOS tube S5 is turned off, the diode D1 is conducted, the voltage across the secondary coil of the high-frequency transformer is positive output voltage, the leakage inductance of the transformer discharges, and energy is transferred to the output side;
step four, the MOS tube S1 is turned off, the MOS tube S5 is turned on, the MOS tube S2 is turned on at zero voltage, the voltage across the secondary side coil of the high-frequency transformer becomes 0, and the energy transmission is finished;
step five, switching off the MOS tube S4, switching on the MOS tube S3 at zero voltage, wherein the voltage across the primary coil of the high-frequency transformer is negative input voltage, the voltage across the secondary coil is 0, and the leakage inductance of the high-frequency transformer is charged;
step six, the MOS tube S6 is turned off, the diode D2 is conducted, the voltage across the secondary coil of the high-frequency transformer is negative output voltage, the leakage inductance of the transformer discharges, and energy is transferred to the output side;
And step seven, switching off the MOS transistor S2, switching on the MOS transistor S6, ending the rectification process, completing one switching cycle, and returning to the step one in the next switching cycle.
Further, the implementation process of the method of the present invention is further described with reference to fig. 5:
[ t0-t1 ] the input side MOS transistors S1 and S3 are turned on, and the output side MOS transistors S5 and S6 are turned on. The voltage across the primary and secondary windings of the high frequency transformer is 0. The leakage inductance does not perform charge and discharge actions, the current of the leakage inductance is kept negative, and the amplitude is approximately zero. The circuit does not transfer energy at this time.
This stage is the dead zone between MOS transistors S3 and S4. At time t1, MOS tube S3 is turned off, negative leakage inductance current begins to discharge the output capacitor of S4, and the output capacitor of S3 is charged. When the output capacitor voltage of the MOS transistor S4 is discharged to 0V, the body diode of the MOS transistor S4 is conducted.
At time t2-t3, the gate of the MOS transistor S4 drives a given gate. Before this, the body diode of the MOS transistor S4 is already turned on, so at this point, the MOS transistor S4 is turned on at zero voltage. At this stage, the primary winding of the high-frequency transformer is cross-voltage to be the forward input voltage. The output side MOS transistors S5 and S6 still keep an on state, and the voltage across the secondary side coil of the high-frequency transformer is 0. The leakage inductance is charged at this stage, and the leakage inductance current reaches a maximum value at time t 3.
The input side keeps the MOS transistors S1 and S4 open at the stage, and the voltage across the primary coil of the high-frequency transformer is still the forward input voltage. The output side MOS transistor S6 is kept on, and the MOS transistor S5 is turned off. At this time, the leakage inductance current is in the forward direction, so that the diode D1 is turned on. Energy is transferred from the input side to the output side. The voltage across the secondary winding of the high-frequency transformer is the forward output voltage. In this process, the leakage inductance discharges, and the leakage inductance current decreases to approximately zero forward current at time t 4.
This stage is the dead zone between MOS transistors S1 and S2. At time t4, MOS transistor S1 is turned off, while MOS transistor S5 is turned on. The voltage across the secondary winding of the high-frequency transformer becomes 0, and the energy transmission is finished. On the input side, the leakage inductance current, which is approximately zero in the forward direction, starts to discharge the output capacitor of S2 and charges the output capacitor of S1. When the output capacitor voltage of the MOS transistor S2 is discharged to 0V, the body diode of the MOS transistor S2 is conducted.
At time t5-t6, the gate of the MOS transistor S2 is driven to be given. Before this, the body diode of the MOS transistor S2 is already turned on, so at this point, the MOS transistor S2 is turned on at zero voltage. At this stage, the input side MOS transistors S2 and S4 are turned on, and the output side MOS transistors S5 and S6 are turned on. The voltage across the primary and secondary windings of the high frequency transformer is 0. The leakage inductance does not perform charge and discharge operation, and the current remains unchanged, which is the leakage inductance current with the forward direction being approximately zero. The circuit does not transfer energy at this time.
This stage is the dead zone between MOS transistors S3 and S4. At time t6, the MOS tube S4 is turned off, the leakage inductance current with the forward direction being approximately zero starts to discharge the output capacitor of S3, and the output capacitor of S4 is charged. When the output capacitor voltage of the MOS transistor S3 is discharged to 0V, the body diode of the MOS transistor S3 is conducted.
At time t7-t8, the gate of the MOS transistor S3 is driven to be given. Before this, the body diode of the MOS transistor S3 is already turned on, so at this point, the MOS transistor S3 is turned on at zero voltage. In this stage, as both MOS transistors S2 and S3 are turned on, the primary winding voltage of the high-frequency transformer is negative input voltage. The output side MOS transistors S5 and S6 still keep an on state, and the voltage across the secondary side coil of the high-frequency transformer is 0. The leakage inductance is charged at this stage, and the leakage inductance current reaches a negative maximum value at time t 3.
At this stage, the input side keeps the MOS transistors S2 and S3 open, and the voltage across the primary winding of the high-frequency transformer is still the negative input voltage. The output side MOS transistor S5 is kept on, and the MOS transistor S6 is turned off. At this time, the leakage inductance current is negative, so that the diode D2 is turned on. This is a rectifying process, with energy transferred from the input side to the output side. The voltage across the secondary winding of the high frequency transformer is the negative output voltage. In this process, the leakage inductance discharges, and the leakage inductance current decreases to approximately zero in the negative direction at time t 9.
This stage is the dead zone between MOS transistors S1 and S2 [ t9-t0 ]. At time t9, MOS transistor S2 is turned off, while MOS transistor S6 is turned on. The voltage across the secondary coil of the high-frequency transformer becomes 0, and the rectification process is finished. On the input side, the leakage inductance current with negative direction being approximately zero starts to discharge the output capacitor of the S1, and charges the output capacitor of the S2. When the output capacitor voltage of the MOS transistor S1 is discharged to 0V, the body diode of the MOS transistor S1 is conducted.
This is one complete switching cycle.
Finally, it should be noted that: the foregoing description is only illustrative of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (9)
1. A method for realizing full-range soft switching based on a DCDC boost converter is based on the DCDC boost converter, the DCDC boost converter comprises a full-bridge circuit at an input side, a high-frequency transformer and a rectifying circuit at an output side, MOS (metal oxide semiconductor) tubes are configured in the full-bridge circuit and the rectifying circuit, the MOS tubes consist of a main channel, a body diode arranged between a source electrode and a drain electrode and an output capacitor, wherein: the full-bridge circuit comprises MOS tubes S1, S2, S3 and S4, wherein the MOS tube S1 is connected between an input side positive electrode and the MOS tube S2; the MOS tube S2 is connected between the input side negative electrode and the MOS tube S1; the MOS tube S3 is connected between the positive electrode of the input side and the MOS tube S4; the MOS tube S4 is connected between the input side negative electrode and the MOS tube S3; the rectification circuit comprises MOS (metal oxide semiconductor) tubes S5 and S6 and diodes D1 and D2, and the diode D1 is connected between the positive electrode of the output side and the MOS tube S5; the MOS tube S5 is connected between the diode D1 and the negative electrode of the output side; the diode D2 is connected between the positive electrode of the output side and the MOS tube S6; the MOS tube S6 is connected between the diode D2 and the negative electrode of the output side; the high-frequency transformer is connected between the full-bridge circuit and the rectifying circuit, the positive and negative ends of the primary coil of the high-frequency transformer are respectively connected between the MOS tube S1 and the MOS tube S2 and between the MOS tube S3 and the MOS tube S4, and the positive and negative ends of the secondary coil of the high-frequency transformer are respectively connected between the diode D1 and the MOS tube S5 and between the diode D2 and the MOS tube S6, and the high-frequency transformer is characterized in that the implementation process is as follows:
firstly, switching on MOS tubes S1 and S3 at an input side and switching on MOS tubes S5 and S6 at an output side, wherein the voltage across primary and secondary coils of a high-frequency transformer is 0;
Step two, the MOS tube S3 is turned off, the MOS tube S4 is turned on, the voltage across the primary side coil of the high-frequency transformer is positive input voltage, the voltage across the secondary side coil of the high-frequency transformer is 0, and leakage inductance of the high-frequency transformer is charged;
step three, the MOS tube S5 is turned off, the diode D1 is conducted, the voltage across the secondary coil of the high-frequency transformer is positive output voltage, the leakage inductance of the transformer discharges, and energy is transferred to the output side;
step four, the MOS tube S1 is turned off, the MOS tube S5 is turned on, the MOS tube S2 is turned on at zero voltage, the voltage across the secondary side coil of the high-frequency transformer becomes 0, and the energy transmission is finished;
step five, switching off the MOS tube S4, switching on the MOS tube S3 at zero voltage, wherein the voltage across the primary coil of the high-frequency transformer is negative input voltage, the voltage across the secondary coil is 0, and the leakage inductance of the high-frequency transformer is charged;
step six, the MOS tube S6 is turned off, the diode D2 is conducted, the voltage across the secondary coil of the high-frequency transformer is negative output voltage, the leakage inductance of the transformer discharges, and energy is transferred to the output side;
And step seven, switching off the MOS transistor S2, switching on the MOS transistor S6, ending the rectification process, completing one switching cycle, and returning to the step one in the next switching cycle.
2. The method for realizing full-range soft switching based on the DCDC boost converter according to claim 1, wherein in the full-bridge circuit, drains of MOS transistors S1 and S3 are connected with an input side positive electrode, and sources of MOS transistors S1 and S3 are respectively connected with drains of MOS transistors S2 and S4; the sources of the MOS transistors S2 and S4 are connected with the negative electrode of the input side; the drains of the MOS tubes S1 and S3 are also connected with one end of a capacitor C1, and the other end of the capacitor C1 is connected with the sources of the MOS tubes S2 and S4.
3. The method for realizing full-range soft switching based on a DCDC boost converter according to claim 1, wherein in the rectifying circuit, an anode of a diode D1 is connected with one end of a secondary side coil of a high-frequency transformer and a drain electrode of a MOS tube S5, and a cathode of the diode D1 is connected with an anode of an output side; the anode of the diode D2 is connected with the other end of the secondary coil of the high-frequency transformer and the drain electrode of the MOS tube S6, and the cathode of the diode D2 is connected with the anode of the output side; the sources of the MOS transistors S5 and S6 are connected with the negative electrode of the output side; the cathodes of the diodes D1 and D2 are also connected with one end of a capacitor C2, and the other end of the capacitor C2 is connected with the sources of the MOS transistors S5 and S6.
4. The method for implementing a full-range soft switch based on a DCDC boost converter according to any one of claims 1-3, wherein in the second step, when the MOS transistor S3 is turned off, the negative leakage inductance current of the high-frequency transformer starts to discharge the output capacitance of the MOS transistor S4, charges the output capacitance of the MOS transistor S3, when the output capacitance voltage of the MOS transistor S4 is discharged to 0v, the body diode of the MOS transistor S4 is turned on, then the gate of the MOS transistor S4 is driven to a given value, the MOS transistor S4 is turned on at zero voltage, the primary side coil of the high-frequency transformer is at a positive input voltage, the secondary side coil of the high-frequency transformer is at a voltage of 0, and the leakage inductance of the high-frequency transformer is charged at this stage and reaches a maximum value.
5. A method for implementing full-range soft switching based on DCDC boost converter according to any one of claims 1-3, wherein in step three, the input side keeps MOS transistors S1 and S4 on, the voltage across the primary winding of the high frequency transformer is the forward input voltage, the output side MOS transistor S6 keeps on, the leakage inductance current of the high frequency transformer is forward, diode D1 is turned on, energy is transferred from the input side to the output side, the voltage across the secondary winding of the high frequency transformer is the forward output voltage, and the leakage inductance of the high frequency transformer discharges and decreases to approximately zero forward current.
6. The method for realizing full-range soft switching based on the DCDC boost converter according to any one of claims 1-3, wherein in the fourth step, the MOS tube S1 is turned off, the MOS tube S5 is turned on, the voltage across the secondary coil of the high-frequency transformer becomes 0, and the energy transfer is finished; the input side, the leakage inductance current with the forward direction being approximately zero starts to discharge the output capacitor of the MOS tube S2, charges the output capacitor of the MOS tube S1, and when the voltage of the output capacitor of the MOS tube S2 is discharged to 0V, the body diode of the MOS tube S2 is conducted; the gate electrode of the OS tube S2 is driven and given, and the MOS tube S2 is turned on with zero voltage; in this stage, the input side MOS transistors S2 and S4 are turned on, the output side MOS transistors S5 and S6 are turned on, the voltage across the primary winding and the secondary winding of the high frequency transformer is 0, the leakage inductance does not perform charge and discharge operation, the current remains unchanged, the current is the leakage inductance current with the forward direction being approximately zero, and the circuit does not perform energy transfer at this time.
7. A method for implementing a full-range soft switch based on a DCDC boost converter according to any one of claims 1-3, wherein in step five, MOS transistor S4 is turned off, and the forward leakage inductance current approximately zero begins to discharge the output capacitor of S3, and charges the output capacitor of S4; when the output capacitor voltage of the MOS tube S3 is discharged to 0V, the body diode of the MOS tube S3 is conducted; the gate electrode of the MOS tube S3 is driven and given, and the MOS tube S3 realizes zero-voltage on; the MOS tubes S2 and S3 are all on, the voltage across the primary side coil of the high-frequency transformer is negative input voltage, the MOS tubes S5 and S6 on the output side still keep on, the voltage across the secondary side coil of the high-frequency transformer is 0, the leakage inductance is charged at the stage, and the leakage inductance current reaches the negative maximum value at the time t 3.
8. A method for implementing a full-range soft switch based on a DCDC boost converter according to any one of claims 1-3, wherein in step six, the input side keeps MOS transistors S2 and S3 open, and the voltage across the primary winding of the high frequency transformer is a negative input voltage; the MOS tube S5 at the output side is kept on, the MOS tube S6 is turned off, the leakage inductance current of the high-frequency transformer is negative at the moment, the diode D2 is turned on, energy is transferred from the input side to the output side, the voltage across the secondary side coil of the high-frequency transformer is negative output voltage, and in the step, the leakage inductance of the high-frequency transformer discharges and the current is reduced to be approximately zero in the negative direction.
9. The method for realizing full-range soft switching based on the DCDC boost converter according to any one of claims 1-3, wherein in the seventh step, MOS tube S2 is turned off, MOS tube S6 is turned on, the voltage across the secondary coil of the high-frequency transformer becomes 0, and the rectification process is ended; on the input side, the leakage inductance current with the negative direction being approximately zero starts to discharge the output capacitor of the MOS tube S1, charges the output capacitor of the MOS tube S2, and when the voltage of the output capacitor of the MOS tube S1 is discharged to 0V, the body diode of the MOS tube S1 is conducted.
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