CN110518452A - 一种电泵浦深紫外AlGaN半导体激光器 - Google Patents
一种电泵浦深紫外AlGaN半导体激光器 Download PDFInfo
- Publication number
- CN110518452A CN110518452A CN201910692141.7A CN201910692141A CN110518452A CN 110518452 A CN110518452 A CN 110518452A CN 201910692141 A CN201910692141 A CN 201910692141A CN 110518452 A CN110518452 A CN 110518452A
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- semiconductor laser
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 19
- 238000005086 pumping Methods 0.000 title abstract 3
- 244000309464 bull Species 0.000 claims abstract description 15
- 210000003205 muscle Anatomy 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 3
- 238000004804 winding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 238000005457 optimization Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010388 wound contraction Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201910692141.7A CN110518452B (zh) | 2019-07-30 | 2019-07-30 | 一种电泵浦深紫外AlGaN半导体激光器 |
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CN201910692141.7A CN110518452B (zh) | 2019-07-30 | 2019-07-30 | 一种电泵浦深紫外AlGaN半导体激光器 |
Publications (2)
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CN110518452A true CN110518452A (zh) | 2019-11-29 |
CN110518452B CN110518452B (zh) | 2020-10-30 |
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CN201910692141.7A Active CN110518452B (zh) | 2019-07-30 | 2019-07-30 | 一种电泵浦深紫外AlGaN半导体激光器 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9246311B1 (en) * | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
CN207179277U (zh) * | 2017-07-06 | 2018-04-03 | 温州博远工业设计有限公司 | 一种可调光圈的五金灯具 |
CN207474913U (zh) * | 2017-09-22 | 2018-06-08 | 泉州市君健智能家居设备有限公司 | 一种球型半导体激光器 |
CN208062476U (zh) * | 2017-10-30 | 2018-11-06 | 深圳市贝尔激光技术有限公司 | 一种一体式紫外激光器 |
CN109143724A (zh) * | 2018-11-08 | 2019-01-04 | 山东理工大学 | 一种可调光圈装置 |
CN109888612A (zh) * | 2019-04-17 | 2019-06-14 | 中国科学院长春光学精密机械与物理研究所 | 电泵浦深紫外AlGaN半导体激光器及其制备方法 |
-
2019
- 2019-07-30 CN CN201910692141.7A patent/CN110518452B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9246311B1 (en) * | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
CN207179277U (zh) * | 2017-07-06 | 2018-04-03 | 温州博远工业设计有限公司 | 一种可调光圈的五金灯具 |
CN207474913U (zh) * | 2017-09-22 | 2018-06-08 | 泉州市君健智能家居设备有限公司 | 一种球型半导体激光器 |
CN208062476U (zh) * | 2017-10-30 | 2018-11-06 | 深圳市贝尔激光技术有限公司 | 一种一体式紫外激光器 |
CN109143724A (zh) * | 2018-11-08 | 2019-01-04 | 山东理工大学 | 一种可调光圈装置 |
CN109888612A (zh) * | 2019-04-17 | 2019-06-14 | 中国科学院长春光学精密机械与物理研究所 | 电泵浦深紫外AlGaN半导体激光器及其制备方法 |
Non-Patent Citations (1)
Title |
---|
NEWPORT公司: "封面广告", 《光电产品与资讯》 * |
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CN110518452B (zh) | 2020-10-30 |
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Effective date of registration: 20200928 Address after: 362100 No. 117, Hou Dun, Jinshan Village, Luoyang Town, Hui'an County, Quanzhou City, Fujian Province Applicant after: Xie Jianjia Address before: 510630 electronic technology building, No. 63, West Zhongshan Avenue, Guangzhou, Guangdong Province Applicant before: Zeng Hanyu |
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Effective date of registration: 20220507 Address after: 438000 east of Changjiang 1st Road and north of Tangdu 5th Road, Huangzhou District, Huanggang City, Hubei Province Patentee after: HUBEI ANYICHEN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: No.117 Dunhou, Jinshan Village, Luoyang Town, Hui'an County, Quanzhou City, Fujian Province Patentee before: Xie Jianjia |
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CP03 | Change of name, title or address |
Address after: 438000, No. 10 Fenghuotai Road, Huangzhou District, Huanggang City, Hubei Province Patentee after: Hubei Mingpu Guangtong Technology Co.,Ltd. Country or region after: China Address before: 438000 east of Changjiang 1st Road and north of Tangdu 5th Road, Huangzhou District, Huanggang City, Hubei Province Patentee before: HUBEI ANYICHEN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Country or region before: China |