CN110518440A - A kind of light emitting device and preparation method thereof - Google Patents
A kind of light emitting device and preparation method thereof Download PDFInfo
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- CN110518440A CN110518440A CN201810494392.XA CN201810494392A CN110518440A CN 110518440 A CN110518440 A CN 110518440A CN 201810494392 A CN201810494392 A CN 201810494392A CN 110518440 A CN110518440 A CN 110518440A
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- metallic reflector
- resin layer
- wavelength conversion
- light emitting
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000011347 resin Substances 0.000 claims abstract description 113
- 229920005989 resin Polymers 0.000 claims abstract description 112
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000002002 slurry Substances 0.000 claims description 35
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 21
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 17
- 230000007704 transition Effects 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 7
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 6
- 125000005442 diisocyanate group Chemical group 0.000 claims description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 6
- -1 polyethylene Polymers 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- 239000012752 auxiliary agent Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 230000019635 sulfation Effects 0.000 abstract description 3
- 238000005670 sulfation reaction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-N cyanic acid Chemical compound OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000011877 solvent mixture Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of light emitting devices, including the wavelength conversion layer, metallic reflector and bearing substrate being cascading, further includes: the first resin layer is arranged between the wavelength conversion layer and the metallic reflector；Transparent dielectric layer is arranged between first resin layer and the metallic reflector, and for the transparent dielectric layer with a thickness of 20-1000nm, the surface of the transparent dielectric layer can be between the surface of metallic reflector energy and the surface energy of first resin layer.The weatherability of metallic reflector of the invention is more preferable, it is higher with the binding force of wavelength conversion layer, the output light of device will not colour cast, solves wavelength conversion layer polished surface out-of-flatness in the prior art, metallic reflector and the junction bonding force of wavelength conversion layer be weak and interfacial seal difference is easy to happen oxidation, sulfation and the low technical problem of section wave band visible reflectance.
Description
Technical field
The invention belongs to optical technical fields, and in particular to a kind of light emitting device and preparation method thereof.
Background technique
With the development of display and lighting engineering, low cost, long-life, efficient light source become current mainstream research
Direction.A kind of existing light source solution is by using solid state light emitter (such as: laser) as exciting light deexcitation wavelength
Transition material obtains the visible light of different wave length, this scheme can have both long-life and the wavelength conversion material of solid state light emitter simultaneously
The advantages of inexpensive, high electro-optical efficiency.The device for usually carrying wavelength conversion material is referred to as light emitting device, by right
Light emitting device, which carries out structure design, can further promote the said effect of light source.
Fig. 1 shows a kind of reflection type light-emitting device of the prior art, and metal directly is arranged in 101 side of wavelength conversion layer
Reflecting layer 102, metallic reflector 102 reconnect heat-conducting substrate 103.Since the compactness of wavelength conversion layer is poor, so that metal
The junction interfacial seal of reflecting layer and wavelength conversion layer is poor, cause metallic reflector be easy with air in oxygen, steam,
The contact such as sulphur, phenomena such as oxidation occurs, vulcanizes.
In addition to this, due to wavelength conversion layer be by wavelength conversion material (such as: fluorescent powder, quantum dot) with glass powder or
Ceramic powder sintering forms, and needs to be bonded reflecting layer after one surface polishes.But the wavelength conversion layer formed through sintering is multiple
Phase structure, since the Mohs' hardness of different phases (such as: fluorescent powder phase and glass phase) is different, each phase in subsequent polishing process
The degree of wear it is different, be easy to form rough surface texture on the surface of wavelength conversion layer, lead to reflecting layer and wavelength
Conversion layer bonding force is weak.
Summary of the invention
Technology based on the above background, the invention solves the interfacial seals of metallic reflector and wavelength conversion layer junction
The technical issues of light emitting device reliability reduces caused by difference and bonding force are weak, and be expected that by and a kind of following technology is provided
The light emitting device of scheme solves above-mentioned technical problem.
A kind of light emitting device is also wrapped including the wavelength conversion layer, metallic reflector and bearing substrate being cascading
Include: the first resin layer is arranged between the wavelength conversion layer and the metallic reflector；Transparent dielectric layer is arranged described
Between first resin layer and the metallic reflector, the transparent dielectric layer with a thickness of 20-1000nm, the transparent dielectric layer
It surface can be between the surface of metallic reflector energy and the surface energy of first resin layer.
Optionally, the refractive index of first resin layer is less than the refractive index of the transparent dielectric layer.
Optionally, the second resin layer is set between the metallic reflector and the bearing substrate.
Optionally, transition zone, the surface of the transition zone are set between the metallic reflector and second resin layer
It can be between the surface of metallic reflector energy and the surface energy of second resin layer.
Optionally, the bearing substrate is ceramic substrate.
Optionally, the roughness on the surface contacted in first resin layer with the transparent dielectric layer is less than 0.5 μm.
Optionally, the transparent dielectric layer is TiO2Film, the TiO2Film thickness is 18nm, 129nm or 240nm.
Optionally, the visible light transmittance of first resin layer is greater than 95%.
The present invention also provides a kind of preparation methods for preparing light emitting device, include the following steps:
S10: the solvent of film forming matter, auxiliary agent, filler and at least two different boilings is uniformly mixed by predetermined ratio, is obtained
To resin slurry；
S20: the resin slurry is coated in one side surface of wavelength conversion layer and forms resinous coat, solidifies the resinous coat
Form resin layer；
S30: transparent dielectric layer is deposited far from a side surface of the wavelength conversion layer in the resin layer；
S40: metallic reflector is set on the transparent dielectric layer, then is turned in the metallic reflector far from the wavelength
Change the side setting bearing substrate of layer.
Optionally, the predetermined ratio are as follows: 17-33wt% acrylic resin, 5-15wt% silica, the poly- second of 1-5wt%
Alkene, penta rouge of 5-10wt% acetic acid, 5-10wt% propylene glycol methyl ether acetate, 10-15wt% n-butyl acetate, 10-15wt% second
The poly- diisocyanate base hexane of acid butyl ester, 20-25wt%.
The invention has the following beneficial effects: by the way that the first resin layer is arranged between wavelength conversion layer and metallic reflector
And transparent dielectric layer, solve wavelength conversion layer polished surface out-of-flatness, the junction of metallic reflector and wavelength conversion layer is viscous
The technical issues of relay is weak and interfacial seal difference is easy to happen oxidation, sulfation, makes the weatherability of metallic reflector more
It is good, it is higher with the binding force of wavelength conversion layer；The thickness of refractive index and transparent dielectric layer to the first resin layer is designed, and is made
It obtains light emitting device and realizes that there is high reflectance to short-wavelength visible light, the light colour cast problem of output is addressed.
Detailed description of the invention
Fig. 1 is the luminous device structure schematic diagram of the prior art of the present invention
Fig. 2 is luminous device structure schematic diagram of the invention
Fig. 3 is the luminous device structure schematic diagram of another embodiment of the present invention
Fig. 4 is the luminous device structure schematic diagram of another embodiment of the present invention
Specific embodiment
Fig. 2 shows luminous device structure schematic diagrames of the invention, as shown in Fig. 2, the light emitting device 200, including successively
Wavelength conversion layer 201, the first resin layer 202, transparent dielectric layer 203, metallic reflector 204 and the bearing substrate being stacked
205。
Wavelength conversion layer 201 be by fluorescent powder or quantum dot equiwavelength transition material and the sintering of glass powder or alumina powder and
At absorbable exciting light and the stimulated light for issuing different wave length, for example, wavelength conversion layer 201 is by YAG:Ce3+Fluorescent powder with
Al2O3Powder sintering forms, and absorbs the blue light of 450nm wavelength and issues the yellow light of longer wavelength.Those skilled in the art are come
Say, wavelength change turn layer 201 luminescence process be not limited to absorb short wavelength's exciting light outgoing long wavelength's stimulated light, work as wavelength convert
Material can also absorb long-wavelength excitation light outgoing short wavelength's stimulated light when being up-conversion luminescent material.
Due to light emitting device be multilayered structure, it usually needs after wavelength conversion layer 201 is polished on one side with other layers
Bonding is composite diphase material in view of wavelength conversion layer 201, and convex-concave structure can be presented in surface of polished, therefore the first resin layer 202 needs
At least one surface including the burnishing surface of wavelength conversion layer 201 is covered, for filling and leading up the convex-concave structure of burnishing surface.Specifically may be used
Resin slurry is turned to form a coating on layer 201 in wavelength in a manner of using coating, the flow behavior of slurry can be fine
Fill and lead up convex-concave structure and formed have flat surfaces resin layer.Since light needs to penetrate the first resin layer 202 and to the greatest extent may be used
Energy is reflected by metallic reflector 204, therefore the transmitance of the first resin layer 202 should be greater than 90%, and preferably transmitance is greater than
95%.It laterally propagates and causes damages in the first resin layer 202 in order to avoid light, and also to thermal resistance is reduced, the first tree
The thickness of rouge layer 202 needs small as far as possible but too small thickness to will also result in other layer of jail combined with the first resin layer 204
Solidity reduces.It is obtained through experiment, when the first resin layer 202 is with a thickness of 0.5 μm -10 μm, can both guarantee the knot with other layers
Close intensity, it is also possible to obtain high light effect.It should be understood that the first resin layer 202 has filled and led up the convex-concave of wavelength conversion layer 201
Surface, therefore 202 surface of the first resin layer contacted with wavelength conversion layer 201 is similarly convex-concave structure, above-mentioned first resin layer
202 flat surfaces and its convex-concave surface are spatially opposite.
When reflecting layer is arranged, inventor is found through experiments that, in most cases directly sets metallic reflector 204
It sets and is easy to fall off on the first resin layer 202, not can solve reflecting layer and the weak problem of wavelength conversion layer bonding force, reason
It is that the surface of resin layer can be far smaller than metal layer.To solve this problem, the present invention is provided with one on the first resin layer 202
It surface can be between the transparent dielectric layer 203 of resin layer and metal layer.Transparent dielectric layer includes but is not limited to Al2O3Deielectric-coating, SiO2
Deielectric-coating, TiO2Deielectric-coating and MgF2Deielectric-coating, can by vacuum-deposited mode the first resin layer 202 flat surfaces
It is formed, wherein flat surfaces of the surface roughness less than 0.5 μm can be such that the depositing operation difficulty of transparent dielectric layer substantially reduces,
And the subsequent reflecting effect of transparent dielectric layer is more preferably.Transparent dielectric layer 203 is with a thickness of 20nm~1000nm.
Metallic reflector 204 can be the metal material of the high reflectances such as Al, Ag, Au, pass through sputter coating, vacuum evaporation
Etc. modes be arranged on transparent dielectric layer 203, wherein metallic reflector 204 with a thickness of 50~1000nm, have good anti-
Penetrate effect.Bearing substrate 205 is arranged on metallic reflector 204, plays support and thermally conductive effect.Bearing substrate can be example
Such as the metal substrate of aluminum substrate, copper base or copper aluminium electric hybrid board, it is also possible to such as aluminium nitride substrate, aluminum oxide substrate or nitrogen
Change the ceramic substrate of borosilicate substrate, the present invention and without limitation.Bearing substrate 205 can be arranged in by modes such as welding, gluings
On metallic reflector 204.As shown in figure 3, in some embodiments, may be used also between bearing substrate 205 and metallic reflector 204
The second resin layer 206 is arranged, the second resin layer 206 is identical as 202 material of the first resin layer and set-up mode, the second resin layer
206 only play bonding effect, are not required to its optical effect, thus the second resin layer with a thickness of 50~200 μm.Such as Fig. 4
Shown, in some embodiments, being additionally provided with surface between the second resin layer 206 and metallic reflector 204 can be between the two
Between transition zone 207, which, which can only serve, improves the second resin layer 206 and 204 being firmly combined property of metallic reflector
Effect, to guarantee the being firmly combined property between heat-conducting effect and layer, which is 5~8 μm.When bearing substrate 205
Transition zone is set when Ceramics substrate, between metallic reflector and bearing substrate and the structure of the second resin layer is especially suitable,
Because the metallic reflector and ceramic substrate fastness that welding manner combines be not high, the metallic reflector and pottery that adhesive means combine
Porcelain substrate can lead to the reduction of light emitting device reliability because the weatherability of adhesive is poor.Resin material has more relative to adhesive
High weatherability has stronger fastness for the bonding of metal and ceramics compared to welding manner.
More than, the present invention between wavelength conversion layer 201 and metallic reflector 204 by being arranged 202 He of the first resin layer
Transparent dielectric layer 203 solves 201 polished surface out-of-flatness of wavelength conversion layer, the combination of metallic reflector and wavelength conversion layer
Locate the technical issues of bonding force is weak and interfacial seal difference is easy to happen oxidation, sulfation, makes the weather-proof of metallic reflector
Property is more preferable, higher with the binding force of wavelength conversion layer.
The shortcomings that beneficial effects of the present invention are far above this, metallic reflector also resides in visible reflectance difference.Gold
Belong to refractive index/extinction coefficient with wavelength change, in addition surface scattering causes metallic reflector short with reasons such as the variations of wavelength
Wave visible-range internal reflection rate is lower than long wave limit, when the light emitting device using metallic reflector is for display fields such as projections
When will lead to picture color distortion.By taking argentum reflecting layer as an example, as shown in figure 3, argentum reflecting layer is in bluish-green optical band (450nm-
Reflectivity 550nm) is lower than red spectral band (620nm~760nm) reflectivity, that is, when being used for display field, feux rouges ratio in picture
Example is high, and blue green light ratio is low, and picture is partially red.It is preferred, therefore, that transparent dielectric layer 203 also has other effects in the present invention,
Such as realize to short wavelength section visible light have high reflectance, make up metallic reflector short-wave band visible reflectance it is low lack
It falls into.Specifically, allowing the visible light of short-wave band to be formed after two surface reflections of transparent dielectric layer 203 using principle of interference
The optical path difference of two beam reflected lights meets constructive interference, reinforces the reflected light of the wave band because of interference, realizes transparent dielectric layer 203
There is high reflectance to specific short-wave band visible light.It is required in the selection of the material of the first resin layer 202 and transparent dielectric layer 203
The refractive index n of first resin layer 2022The refractive index n of transparent dielectric layer 203 should be less than3, the preferably refraction of the first resin layer 202
Rate is 1, by the thickness t of design transparent dielectric layer 203, it is made to meet equation:When, the high reflectance effect to specific wavelength visible light can be realized,
Wherein λ is the visible wavelength for needing to be improved reflectivity.In this way, wavelength is λ or the wave band interference enhancing centered on λ, and its
The light reflectivity of all band slightly has loss.With TiO2For deielectric-coating, when TiO2 is with a thickness of 18nm, 129nm, 240nm
It can be achieved have high reflectance to the short-wave band of 500nm.
The present invention also provides a kind of preparation methods of light emitting device, include the following steps:
S10: the solvent of film forming matter, auxiliary agent, filler and at least two different boilings is uniformly mixed by predetermined ratio, is obtained
To resin slurry；
S20: the resin slurry is coated in one side surface of wavelength conversion layer and forms resinous coat, solidifies the resinous coat
Form resin layer；
S30: transparent dielectric layer is deposited far from a side surface of the wavelength conversion layer in the resin layer；
S40: metallic reflector is set on the transparent dielectric layer, then is turned in the metallic reflector far from the wavelength
Change the side setting bearing substrate of layer.
The determination of resin slurry each group component selections and content needs to consider the reliability of light emitting device.Specifically, in group
In component selections, film forming matter will directly affect the reliability of resin layer as main ingredient, and the present invention selects phenolic resin, propylene
At least one of acid resin, unsaturated polyester resin and epoxy resin are used as film forming matter, and curing process selects heat cure, Gu
Change temperature and select 125~150 DEG C, product heat resistance is higher.Auxiliary agent selects polyethylene.Filler is silicon carbide, silica, oxidation
Zirconium, at least one of aluminium oxide.Solvent include penta rouge of acetic acid, propylene glycol methyl ether acetate, n-butyl acetate, butyl acetate and
Poly- diisocyanate base hexane, the present invention select the solvent of at least two different boilings that can form gradient volatilization, not will lead to and fill out
Expect too fast or too slow precipitation, and then plays the role of adjusting resin layer transparency.
In the determination of content, since resin slurry is coated in the burnishing surface of wavelength conversion layer, resin slurry and wavelength turn
The contact area for changing layer is bigger, and the adhesive force after solidifying is higher, when resin slurry fills up the convex-concave of wavelength conversion layer burnishing surface
When structure, the adhesive force of wavelength conversion layer and resin layer is theoretically maximum, it is therefore desirable to which resin slurry has good mobility
To fill and lead up the convex-concave structure of burnishing surface, and good mobility is also easier to obtain flat surface.And for resin slurry
Curing molding for, film forming matter content is higher, and film forming is better, but viscosity is also bigger simultaneously, in coated with resins slurry mistake
Mobility is also poorer in journey.To sum up, need to combine the performance of curing molding and adhesive force.Inventors discovered through research that
When including the film forming matter of 17-33wt%, the filler of 5-15wt%, the auxiliary agent of 1-5wt%, 50-75wt% in resin slurry
When solvent mixture, resin slurry can be very good to fill and lead up the convex-concave structure of 201 burnishing surface of wavelength conversion layer, and curing molding
202 weatherability of resin layer can also meet requirement of the invention.It should be understood that above-mentioned solvent mixture includes at least two
The different solvent of boiling point, the different solvent content range of at least two boiling point should meet the sum of lower limit value of content and be
50wt%, the sum of upper limit value of content are 75wt%, and other groups of the content lower limit value of any one solvent and resin slurry
The sum of upper content limit value divided is not less than 100wt%, the upper content limit value of any one solvent and the other components of resin slurry
The sum of content lower limit value be not more than 100wt%.Such as resin slurry includes acrylic resin, the 5-15wt% of 17-33wt%
Silica, the polyethylene of 1-5wt%, 5-10wt% penta rouge of acetic acid, the propylene glycol methyl ether acetate of 5-10wt%, 10-
The n-butyl acetate of 15wt%, the butyl acetate of 10-15wt%, 20-25wt% poly- diisocyanate base hexane.
In some embodiments, after metallic reflector being set on transparent dielectric layer in step S40, then in metallic reflector
Then resin slurry in upper coating step S10 bearing substrate is arranged on resin slurry again, obtain the dress that shines after cured
It sets.
In some embodiments, after metallic reflector being set on transparent dielectric layer in step S40, then in metallic reflector
One layer of transition zone of upper setting, then the resin slurry on transition zone in coating step S10, finally bearing substrate is arranged again
On resin slurry, light emitting device is obtained after cured.It should be noted that the transition zone being arranged in the step 40 of the embodiment
Can be identical with the transparent dielectric layer in step 30, it can also be different, as long as the surface for meeting the transition zone can be anti-between metal
It penetrates between layer and resin slurry.
Below in conjunction with specific embodiment, the present invention will be described.
Embodiment one
It takes the wavelength conversion sheet of a sinter molding as wavelength conversion layer, its at least one face is polished, it is spare.Root
According to purposes, the burnishing surface of the wavelength conversion sheet can be including but not limited to round, rectangular or annular arbitrary shape.It is true
On, due to the thinner thickness of wavelength conversion sheet, usually more than 300 μm, therefore the shape of burnishing surface can be broadly considered as wavelength and turn
Change the shape of piece.
By the acrylic resin of 17wt%, the silica of 8wt%, the polyethylene of 5wt%, 10wt% penta rouge of acetic acid,
The propylene glycol methyl ether acetate of 10wt%, the n-butyl acetate of 15wt%, the butyl acetate of 15wt% and 20wt% it is poly- two different
Cyanic acid base hexane is uniformly mixed, and obtains resin slurry.
Above-mentioned resin slurry is coated on the burnishing surface of wavelength conversion sheet and forms resinous coat, coating method can be rotation
The modes such as painting, spraying, dip-coating, blade coating.It is put into baking oven after standing 0.5~2h, solidifies resinous coat at a temperature of 125 DEG C
To resin layer.Since resinous coat has a certain proportion of contraction after solidification, applied in the resin that coated with resins slurry is formed
Thickness degree should be adjusted according to actually required resin layer thickness, and the resin layer thickness after solidifying is made to be maintained at 0.5~10 μ
M.
The TiO for being 20~1000nm in a side surface deposition thickness of the resin layer far from wavelength conversion sheet2Film, setting
TiO2Film thickness makes the short-wave band reflection enhancement of central wavelength 500nm, according to aforementioned formula, TiO2With a thickness of 18nm, 129nm,
It can realize that the short-wave band of 500nm has high reflectance, preferred 129nm in the present embodiment whens 240nm etc..Depositing operation can refer to existing
There is technology, details are not described herein again.
Then in TiO2Argentum reflecting layer is arranged by magnetron sputtering mode on film, the wavelength convert for having resin layer will be solidified
Piece is put into magnetron sputtering apparatus, and resin layer side is placed towards target, is evacuated down to 10-4Argon gas is poured after Pa, is sputtered Ag target, is splashed
Power 100w, sputtering time 5min are penetrated, deposits the Ag film that a layer thickness is 100nm in resin layer surface.
Argentum reflecting layer is welded aluminum substrate and argentum reflecting layer by way of soldering after preparing, and is disposed with
Wavelength conversion layer, resin layer, TiO2The light emitting device of thin film dielectric layer, argentum reflecting layer and aluminum substrate.
Embodiment two
The present embodiment and embodiment one the difference is that, in the present embodiment resin slurry by 33wt% acrylic acid tree
Rouge, the silica of 14wt%, the polyethylene of 1wt%, penta rouge of acetic acid of 5wt%, 5wt% propylene glycol methyl ether acetate,
The poly- diisocyanate base hexane of the n-butyl acetate of 10wt%, the butyl acetate of 10wt% and 22wt% is uniformly mixed to prepare.
In addition, the bearing substrate of the light emitting device in the present embodiment is ceramic substrate, specifically aluminum nitride ceramic substrate.
In preparation method, in TiO2The argentum reflecting layer for being 1000nm by vacuum sputtering mode deposition thickness on film,
When argentum reflecting layer preparation after, the present embodiment need to also on argentum reflecting layer coated with resins slurry, then again by aluminium nitride ceramics
Substrate is arranged on resin slurry and solidifies.The light emitting device of the present embodiment is different from embodiment one, system through this embodiment
Preparation Method is available to be disposed with wavelength conversion layer, resin layer, TiO2Thin film dielectric layer, argentum reflecting layer, resin layer, nitridation
The light emitting device of aluminium ceramic substrate.
Other are the same as example 1.In the present embodiment, the resin layer between argentum reflecting layer and aluminum nitride ceramic substrate is only
Play bonding effect, its optical effect be not required, the resin layer with a thickness of 200 μm, have good adhesive property and
Low thermal resistance.
Embodiment three
The present embodiment and embodiment one the difference is that, bearing substrate employed in the present embodiment is ceramics first
Substrate, specifically aluminium oxide ceramic substrate.Secondly the composition of resin slurry and content are as follows in the present embodiment:
The acrylic resin of 25wt%, the silica of 5wt%, the polyethylene of 3wt%, 8wt% penta rouge of acetic acid, 10wt%
Propylene glycol methyl ether acetate, the n-butyl acetate of 12wt%, the butyl acetate of 15wt% and 22wt% poly- diisocyanate base
Hexane.
In preparation method, after argentum reflecting layer preparation, the mistake of one layer of 5~8 μ m-thick is set again on argentum reflecting layer
Cross layer.Specifically, the mode of transition zone is arranged on argentum reflecting layer using identical with deposition transparent dielectric layer on the resin layer
Method can deposit identical TiO2Film can also deposit different films (such as Al2O3Film, MgF2Film, SiO2It is thin
Film), the surface that need to only meet transition zone can be between metallic reflector and resin slurry, transition zone in the present embodiment
For Al2O3Film.
Then in Al2O3Finally aluminium oxide ceramic substrate is arranged on resin slurry simultaneously again for coated with resins slurry on film
Solidification.The light emitting device that the present embodiment obtains is also different from embodiment one, preparation method through this embodiment it is available according to
It is secondary to be provided with wavelength conversion layer, resin layer, TiO2Thin film dielectric layer, argentum reflecting layer, Al2O3Film transition layer, resin layer, oxidation
The light emitting device of aluminium ceramic substrate.Al2O3Resin layer between film transition layer and aluminium oxide ceramic substrate with a thickness of 50 μm,
Make finally obtained light emitting device that there is good adhesive property and low thermal resistance.Other are the same as example 1.
Claims (10)
1. a kind of light emitting device, including the wavelength conversion layer, metallic reflector and bearing substrate being cascading, feature exists
In, further includes:
First resin layer is arranged between the wavelength conversion layer and the metallic reflector；
Transparent dielectric layer, be arranged between first resin layer and the metallic reflector, the transparent dielectric layer with a thickness of
The surface of 20-1000nm, the transparent dielectric layer can be between the surface of metallic reflector energy and first resin layer
Between the energy of surface.
2. a kind of light emitting device according to claim 1, which is characterized in that the refractive index of first resin layer is less than institute
State the refractive index of transparent dielectric layer.
3. a kind of light emitting device according to claim 1, which is characterized in that the metallic reflector and the bearing substrate
Between the second resin layer is set.
4. a kind of light emitting device according to weighing and require 3, which is characterized in that the metallic reflector and second resin layer
Between transition zone is set, the surface of the transition zone can between the surface of the metallic reflector can and second resin layer
Between the energy of surface.
5. a kind of light emitting device according to claim 3 or 4, which is characterized in that the bearing substrate is ceramic substrate.
6. a kind of light emitting device according to claim 1, which is characterized in that in first resin layer with transparent Jie
The roughness on the surface that matter layer is contacted is less than 0.5 μm.
7. a kind of light emitting device according to claim 1, which is characterized in that the transparent dielectric layer is TiO2Film, it is described
TiO2Film thickness is 18nm, 129nm or 240nm.
8. a kind of light emitting device according to claim 1, which is characterized in that the visible light transmittance of first resin layer
Greater than 95%.
9. a kind of preparation method of light emitting device, which is characterized in that described method includes following steps:
S10: the solvent of film forming matter, auxiliary agent, filler and at least two different boilings is uniformly mixed by predetermined ratio, is set
Rouge slurry；
S20: the resin slurry is coated in one side surface of wavelength conversion layer and forms resinous coat, solidifies the resinous coat and is formed
Resin layer；
S30: transparent dielectric layer is deposited far from a side surface of the wavelength conversion layer in the resin layer；
S40: metallic reflector is set on the transparent dielectric layer, then in the metallic reflector far from the wavelength conversion layer
Side be arranged bearing substrate.
10. preparation method according to claim 9, which is characterized in that the predetermined ratio are as follows: 17-33wt% acrylic acid
Resin, 5-15wt% silica, 1-5wt% polyethylene, penta rouge of 5-10wt% acetic acid, 5-10wt% propylene glycol methyl ether acetate,
10-15wt% n-butyl acetate, the poly- diisocyanate base hexane of 10-15wt% butyl acetate, 20-25wt%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111009180A (en) * | 2019-12-12 | 2020-04-14 | 宁波融光纳米科技有限公司 | Marker and functional coating |
| CN111332059A (en) * | 2020-03-06 | 2020-06-26 | 上海闻泰信息技术有限公司 | Method for manufacturing texture on metal surface and metal shell plate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0737284A (en) * | 1993-07-21 | 1995-02-07 | Sony Corp | Optical disk |
| EP1238817A2 (en) * | 2001-03-05 | 2002-09-11 | Fuji Photo Film Co., Ltd. | Multicolor image-forming material and multicolor image-forming method |
| JP2006058453A (en) * | 2004-08-18 | 2006-03-02 | Sony Corp | Coating material for low refractive index optical film, optical multilayer film, and reflection type screen |
| JP2010123332A (en) * | 2008-11-18 | 2010-06-03 | Nhk Spring Co Ltd | Mirror and luminaire using the same |
| US20110216414A1 (en) * | 2010-03-02 | 2011-09-08 | Masaki Suzuki | Optical element, window material, fitting, and insolation shielding device |
| CN104048264A (en) * | 2013-03-14 | 2014-09-17 | 东芝照明技术株式会社 | Light source device and lighting device |
| CN104595852A (en) * | 2013-10-30 | 2015-05-06 | 深圳市绎立锐光科技开发有限公司 | Wavelength conversion device, diffuse reflection layer, light source system and projection system |
-
2018
- 2018-05-22 CN CN201810494392.XA patent/CN110518440B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0737284A (en) * | 1993-07-21 | 1995-02-07 | Sony Corp | Optical disk |
| EP1238817A2 (en) * | 2001-03-05 | 2002-09-11 | Fuji Photo Film Co., Ltd. | Multicolor image-forming material and multicolor image-forming method |
| JP2006058453A (en) * | 2004-08-18 | 2006-03-02 | Sony Corp | Coating material for low refractive index optical film, optical multilayer film, and reflection type screen |
| JP2010123332A (en) * | 2008-11-18 | 2010-06-03 | Nhk Spring Co Ltd | Mirror and luminaire using the same |
| US20110216414A1 (en) * | 2010-03-02 | 2011-09-08 | Masaki Suzuki | Optical element, window material, fitting, and insolation shielding device |
| CN104048264A (en) * | 2013-03-14 | 2014-09-17 | 东芝照明技术株式会社 | Light source device and lighting device |
| CN104595852A (en) * | 2013-10-30 | 2015-05-06 | 深圳市绎立锐光科技开发有限公司 | Wavelength conversion device, diffuse reflection layer, light source system and projection system |
Non-Patent Citations (2)
| Title |
|---|
| NGUYEN THE TRAN ET AL.: "Effect of Phosphor Particle Size on Luminous Efficacy of Phosphor-Converted White LED", 《JOURNAL OF LIGHTWAVE TECHNOLOGY》 * |
| 刘红超: "LED产业技术及研究进展", 《上海第二工业大学学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111009180A (en) * | 2019-12-12 | 2020-04-14 | 宁波融光纳米科技有限公司 | Marker and functional coating |
| CN111332059A (en) * | 2020-03-06 | 2020-06-26 | 上海闻泰信息技术有限公司 | Method for manufacturing texture on metal surface and metal shell plate |
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|---|---|
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