CN110518138B - Pixel structure organic light emitting diode and preparation method thereof - Google Patents
Pixel structure organic light emitting diode and preparation method thereof Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
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Abstract
The invention discloses an organic light-emitting diode with a pixel structure, which belongs to the technical field of organic photoelectric display devices and comprises a transparent conductive substrate, a pixilated insulating layer, a first transmission layer, an organic light-emitting layer, a second transmission layer and a composite back electrode which are sequentially overlapped, wherein the pixilated insulating layer is a two-dimensional random nanopore array. The invention also discloses a preparation method of the pixel structure organic light-emitting diode. The pixel-structure organic light-emitting diode can effectively inhibit the efficiency roll-off of an OLED device, improves the optical light-emitting efficiency of the device, has high repeatability and is suitable for different light-emitting materials.
Description
Technical Field
The invention belongs to the technical field of organic photoelectric display devices, and particularly relates to an organic light emitting diode with a pixel structure and a preparation method thereof.
Background
Organic light-emitting diodes (OLEDs) are widely considered to be the most potential display and lighting technologies of the next generation due to their unique advantages of low turn-on voltage, fast response speed, wide color gamut, self-luminescence, wide viewing angle, and being combined with flexible or wearable substrates.
Depending on the light-emitting material of the OLED device, it can be classified into a fluorescent OLED and a phosphorescent OLED. With the application of the phosphorescent material and the delayed fluorescence material, the exciton utilization rate of the phosphorescent OLED and the delayed fluorescence OLED can reach 100% theoretically, and the efficiency of the device is greatly improved.
However, most high efficiency devices face two common problems: firstly, the loss of a surface plasma mode, a substrate mode and a waveguide mode exists in a conventional planar multilayer device structure, so that only about 20% of photons generated in an OLED can escape out of the device, a large amount of photons are lost in the device (about 80%), and the light extraction efficiency is low; secondly, as the brightness increases, the external quantum efficiency of the device is severely reduced, namely the efficiency is reduced. The reasons for the roll-off in efficiency are mainly due to exciton quenching in the non-emissive mode, including singlet-singlet quenching (single-triplet quenching), singlet-triplet quenching (single-triplet quenching), triplet-triplet quenching (triplet-triplet quenching), and exciton-polaron quenching (exciton-polaron quenching). Exciton-polaron quenching in turn includes singlet-polaron quenching (single-polaron quenching) and triplet-polaron quenching (triplet-polaron quenching).
In order to improve the optical light-emitting efficiency of the OLED device, researchers integrate micro-nano structures such as nano gratings, micro lenses, random nano structures and nano particles into the OLED device to inhibit the optical loss of photons, and improve the light-emitting efficiency of the OLED. Meanwhile, in order to inhibit the efficiency roll-off of the OLED device, researchers also design a quantum well light-emitting layer structure, a mixed main body light-emitting layer structure, a gradient doped light-emitting layer structure and the like, so that the efficiency roll-off of the OLED device is effectively improved. However, the above approaches can only achieve the single purpose of suppressing the optical loss or the efficiency roll-off of the OLED device, and it is difficult to improve the optical light extraction efficiency of the device while suppressing the efficiency roll-off of the OLED device.
Therefore, in order to further promote the commercial practical application of the OLED, it is necessary to invent an effective and universal novel device structure to improve the optical light extraction efficiency of the device while suppressing the efficiency roll-off of the OLED device.
Chinese invention patent (publication No. CN108281559A) "a high efficiency, low roll-off phosphorescent organic light emitting diode" discloses a phosphorescent OLED composed of three layers of light emitting layer materials, which can realize higher device efficiency and smaller roll-off efficiency. However, this patent is only applicable to phosphorescent OLEDs and still only about 20% of the photons generated by the device can escape the device and the optical extraction efficiency is still low.
Chinese invention patent (publication No. CN102165845A) "high efficiency Organic Light Emitting Diode (OLED) and method for manufacturing the same" discloses an OLED device structure including a high refractive index layer or electrodes of reuse patterns, which can effectively extract photons generated in the OLED device to the outside. However, this patent can only effectively reduce the optical loss of the OLED, and cannot solve the problem of roll-off in efficiency of the OLED device.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides an organic light emitting diode with a pixel structure, which can inhibit the efficiency roll-off of an OLED device and improve the optical light emitting efficiency of the device. The invention also aims to provide a preparation method of the fluorescent and phosphorescent luminescent material, which has high repeatability and is simultaneously suitable for fluorescent and phosphorescent luminescent materials.
The technical scheme is as follows: in order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a pixel structure organic light emitting diode, is including the transparent conductive substrate, pixelization insulating layer, first transmission layer, organic light emitting layer, second transmission layer and the compound back electrode that coincide in proper order and set up, pixelization insulating layer be two-dimentional random nanopore array.
Further, the transparent conductive substrate is glass/Indium Tin Oxide (ITO).
Furthermore, the material of the pixelization insulating layer is a negative photoresist.
Further, the groove depth of the two-dimensional random nanopore array is 30-40 nm, the duty ratio is 0.2-0.5, and the diameter of the nanopore is 200-400 nm.
The preparation method of the pixel structure organic light-emitting diode comprises the following steps:
s1, spin-coating negative photoresist on the transparent conductive substrate at 2000-3000 r/S;
s2, preparing a pixilated insulating layer of the two-dimensional random nanopore array on the negative photoresist through photoetching and developing technologies;
s3, sequentially spin-coating or thermally evaporating a first transmission layer, an organic light-emitting layer and a second transmission layer on the pixilated insulating layer;
s4 atAt a rate of evaporation on the second transfer layer
And thermally evaporating the composite back electrode to form the pixel structure organic light-emitting diode.
The invention principle is as follows: in OLED devices, there are two common problems, low optical extraction efficiency (large optical loss) and roll-off in efficiency. In order to solve the two common problems simultaneously and effectively, the invention arranges a pixelized insulating layer on a transparent conductive substrate of an OLED device, wherein the pixelized insulating layer comprises a two-dimensional random nanopore array, and after a first transmission layer, an organic light emitting layer, a second transmission layer and a composite back electrode are arranged on the pixelized insulating layer in sequence, because the insulating layer is the pixelized two-dimensional random nanopore array, one OLED device is substantially composed of a plurality of nano pixels, and each nano pore forms an effective carrier transmission channel. Meanwhile, the divided nano-pores effectively isolate excitons and polarons in a nano-scale space, inhibit exciton-polaron quenching, and protect an exciton diffusion zone, thereby effectively inhibiting efficiency roll-off. In addition, the first transmission layer, the organic light emitting layer, the second transmission layer and the composite back electrode are sequentially arranged on the nano-pore pixel insulating layer to form a two-dimensional random nano-array structure, so that the surface plasma wave and the optical loss of the waveguide of the OLED device are effectively reduced, and the optical light extraction efficiency of the device is improved.
Has the advantages that: compared with the prior art, the pixel structure organic light-emitting diode can effectively inhibit the efficiency roll-off of an OLED device and simultaneously improve the optical light-emitting efficiency of the device; the preparation method of the pixel structure organic light-emitting diode has high repeatability and is simultaneously suitable for fluorescent and phosphorescent light-emitting materials.
Drawings
FIG. 1 is a schematic cross-sectional view of an OLED with a pixel structure;
FIG. 2 is a schematic top view of a random nanopore array structure;
FIG. 3 is a flow chart illustrating a process for fabricating an OLED with a pixel structure;
FIG. 4 is a graph of luminance versus external quantum efficiency for the OLED device of example 1;
fig. 5 is a graph of luminance versus power efficiency for the OLED device of example 2.
Detailed Description
In order to further explain the present invention, the following describes an organic light emitting diode with a pixel structure and a method for manufacturing the same in detail with reference to the following embodiments. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined by the appended claims.
The utility model provides a pixel structure organic light emitting diode, includes transparent conductive substrate 1, pixelated insulating layer 2, first transmission layer 3, organic luminescent layer 4, second transmission layer 5 and compound back electrode 6 that the coincide set gradually, pixelated insulating layer 2 is two-dimensional random nanopore array, the groove depth of two-dimensional random nanopore array is 30 ~ 40nm, the duty cycle is 0.2 ~ 0.5, the nanopore diameter is 200 ~ 400nm, set gradually first transmission layer 3, organic luminescent layer 4, second transmission layer 5 and compound back electrode 6 under pixelated insulating layer 2.
The transparent conductive substrate 1 is a glass/indium tin oxide substrate. The material of the pixelated insulation layer 2 is negative photoresist.
A preparation method of an organic light emitting diode with a pixel structure comprises the following steps:
s1, spin-coating negative photoresist on the transparent conductive substrate 1 at 2000-3000 r/S;
s2, preparing a pixilated insulating layer 2 of the two-dimensional random nanopore array on the negative photoresist through photoetching and developing technologies;
s3, sequentially spin-coating or thermally evaporating a first transmission layer 3, an organic light-emitting layer 4 and a second transmission layer 5 on the pixilated insulating layer 2;
s4, on the second transfer layer 5 at an evaporation rate
And thermally evaporating the composite back electrode 6 to form the pixel structure organic light-emitting diode.
Example 1
As shown in fig. 1-4, fig. 1 and fig. 2 are a schematic diagram of an organic light emitting diode with a pixel structure and an explanatory flow chart of a manufacturing process, respectively. The present embodiment will be described in detail with reference to fig. 1 to 4.
This embodiment will be described in detail by taking a green OLED device whose light emitting material is phosphorescence as an example. As shown in fig. 1, in this structure, the transparent conductive substrate 1 is glass/ITO, the pixelated insulating layer 2 is a negative photoresist (RFJ-210), the first transport layer 3 is a stacked structure of two materials, N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine (NPB) and 4,4', 4 ″ -Tri (9-carbaryl) triphenylamine (tcta), the organic light emitting layer 4 is bis (2-phenylpyridine) iridium acetylacetonate (ir (ppy)2(acac)), the second transport layer 5 is 1,3,5-Tri [ (3-pyridil) -phen-3-yl ] bezene (pypb), and the composite back electrode 6 is lithium fluoride (LiF) and aluminum metal (Al).
According to step S1, a negative photoresist (RFJ-210) is spin-coated at 3000 rpm on a transparent conductive substrate glass/ITO, and then dried at 120 degrees celsius.
According to step S2, after mask exposure is performed with an argon ion laser, the film is developed in a sodium hydroxide (NaOH) solution with a volume fraction of 1.5% for 10 seconds, and then naturally air-dried, so as to prepare a nanopore array pixelated insulation layer which is randomly distributed as shown in fig. 3, wherein the diameter of the nanopore is 200nm, the depth of the groove is 30nm, and the duty ratio is 0.2.
According to step S3, after completing the preparation of the pixelated insulation layer, the transparent conductive substrate glass/ITO/pixelated insulation layer is moved into a thermal evaporation chamber, and the evaporation rate is adjusted and maintained at
A stacked structure of a first transport layer NPB (thickness: 40nm) and TCTA (thickness: 15nm), an organic light emitting layer Ir (ppy)2(acac) (0.1nm) and a second transport layer TmPyPB (30nm) were sequentially evaporated.
Controlling the evaporation rate at step S4
And evaporating LiF with the thickness of 1nm and a metal aluminum back electrode with the thickness of 100nm so as to finish the preparation of the pixel structure organic light-emitting diode structure.
To further illustrate the beneficial effects of the present invention, an OLED device without a pixilated insulating layer was used as a reference contrast device under the same fabrication conditions. And repeating the steps S3-S4 to prepare the standard reference device. The specific structure is glass ITO// NPB (40nm)/TCTA (15nm)/Ir (ppy)2(acac) (0.1nm)/TmPyPB (30nm)/LiF (1nm)/Al (100 nm). From the tested external quantum efficiency-luminance curves (see FIG. 4), it can be seen that the luminance exceeds 1000cd/m2In contrast to the drastic decrease in the external quantum efficiency of the reference device, the pixel structure OLED of the present invention has not only a higher external quantum efficiency, but also a relatively smaller decrease in the external quantum efficiency, which indicates that the pixel structure organic light emitting diode of the present invention can effectively suppress the efficiency roll-off of the phosphorescent OLED device, and simultaneously improve the optical light extraction efficiency of the device.
Example 2
The present embodiment is described in detail below with reference to fig. 1-3 and 5.
This embodiment will be described in detail by taking a green OLED device whose light emitting material is fluorescent as an example. As shown in fig. 1, in this structure, the transparent conductive substrate 1 is glass/ITO, the pixilated insulating layer material is a negative photoresist (RFJ-220), the first transport layer 3 is an organic material NPB, and the organic light emitting layer 4 and the second transport layer 5 are both tris (8-hydroquinoline) aluminum (Alq3) composite back electrode 6 is lithium fluoride (LiF) and aluminum metal (Al).
According to step S1, a negative photoresist (RFJ-220) is spin-coated at 2000 rpm on a transparent conductive substrate glass/ITO, and then baked at 120 degrees celsius.
According to step S2, after mask exposure is performed with an argon ion laser, the film is developed in a sodium hydroxide (NaOH) solution with a volume fraction of 1.3% for 15 seconds, and then naturally air-dried, so as to prepare a nanopore array pixelated insulation layer which is randomly distributed as shown in fig. 3, wherein the diameter of the nanopore is 400nm, the depth of the groove is 40nm, and the duty ratio is 0.5.
According to step S3, after completing the preparation of the pixelated insulation layer, the transparent conductive substrate glass/ITO/pixelated insulation layer is moved into a thermal evaporation chamber, and the evaporation rate is adjusted and maintained at
A first transport layer NPB (thickness 40nm), an organic light-emitting layer and a second transport layer Alq3(50nm) were sequentially evaporated.
Controlling the evaporation rate at step S4
And evaporating LiF with the thickness of 1nm and a metal aluminum back electrode with the thickness of 100nm so as to finish the preparation of the pixel structure organic light-emitting diode structure.
To further illustrate the beneficial effects of the present invention, an OLED device without a pixilated insulating layer was used as a reference contrast device under the same fabrication conditions. And repeating the steps S3-S4 to prepare the standard reference device. The specific structure is glass ITO// NPB (40nm)/Alq3(50nm)/LiF (1nm)/Al (100 nm). It can be seen from the tested power efficiency-luminance curve (as shown in fig. 5) that, compared with the reference device, the OLED with the pixel structure of the present invention has not only higher power efficiency, but also relatively smaller decrease of the power efficiency along with the increase of the luminance, which indicates that the OLED with the pixel structure of the present invention can effectively inhibit the efficiency roll-off of the fluorescent OLED device, and simultaneously, the optical light-emitting efficiency of the device is improved.
Claims (3)
1. An organic light emitting diode with a pixel structure, comprising: the organic light-emitting diode comprises a transparent conductive substrate (1), a pixilated insulating layer (2), a first transmission layer (3), an organic light-emitting layer (4), a second transmission layer (5) and a composite back electrode (6) which are sequentially overlapped, wherein the pixilated insulating layer (2) is patterned and exposes part of the transparent conductive substrate (1), and the first transmission layer (3) is contacted with the exposed part of the transparent conductive substrate (1); the pixilated insulating layer (2) is a two-dimensional random nano-pore array, and the first transmission layer (3), the organic light-emitting layer (4), the second transmission layer (5) and the composite back electrode (6) also form the two-dimensional random nano-pore array; the material of the pixilated insulating layer (2) is negative photoresist; the groove depth of the two-dimensional random nanopore array is 30-40 nm, the duty ratio is 0.2-0.5, and the diameter of the nanopore is 200-400 nm.
2. A pixel structure organic light emitting diode according to claim 1, wherein: the transparent conductive substrate (1) is glass/indium tin oxide.
3. A method for manufacturing an organic light emitting diode with a pixel structure according to claim 1 or 2, wherein: the method comprises the following steps:
s1, spin-coating negative photoresist on the transparent conductive substrate (1) at 2000-3000 r/S;
s2, preparing a pixilated insulating layer (2) of a two-dimensional random nanopore array on the negative photoresist through photoetching and developing technologies;
s3, sequentially spin-coating or thermally evaporating a first transmission layer (3), an organic light-emitting layer (4) and a second transmission layer (5) on the pixilated insulating layer (2);
s4, thermally evaporating a composite back electrode (6) on the second transmission layer (5) at an evaporation rate of 4-5A/S to form the pixel structure organic light emitting diode.
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