CN110518132A - The ameliorative way of the green phosphorescent OLED device efficiency of main body is total to based on B3PYMPM exciplex - Google Patents
The ameliorative way of the green phosphorescent OLED device efficiency of main body is total to based on B3PYMPM exciplex Download PDFInfo
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- CN110518132A CN110518132A CN201910738608.7A CN201910738608A CN110518132A CN 110518132 A CN110518132 A CN 110518132A CN 201910738608 A CN201910738608 A CN 201910738608A CN 110518132 A CN110518132 A CN 110518132A
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- b3pympm
- green phosphorescent
- oled device
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- exciplex
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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Abstract
The invention discloses the ameliorative ways for the green phosphorescent OLED device efficiency that main body is total to based on B3PYMPM exciplex, the green phosphorescent OLED device includes luminescent layer, luminescent layer is made of two kinds of material of main parts, object dopant material, it is characterized by: being added 4 to the luminescent layer of green phosphorescent OLED device, 6- bis- (3,5- bis- (3- pyridine) base phenyl) -2- methylpyrimidine (4,6-Bis (3,5-di (pyridin-3-yl) phenyl) -2-methylpyrimidine, B3PYMPM) it is used as co-host.The present invention is added to electron transport material B3PYMPM as another material of main part in the luminescent layer of green phosphorescent OLED device, the exciplex main body with intermolecular TADF effect is formd, to greatly improve the utilization rate of exciton in luminescent layer；And ensure that the transmission balance of luminescent layer carrier, improve the efficiency of device.
Description
Technical field
The present invention is mainly based upon the improvement side that B3PYMPM exciplex is total to the green phosphorescent OLED device efficiency of main body
Method mixes electron transport material B3PYMPM formation exciplex in the material of main part of green phosphorescent OLED device and is total to main body, makes
It is with intermolecular TADF effect, to realize 100% internal quantum efficiency, it can be simple and efficient green for preparation structure
Phosphorescent OLED device provides a new approaches.
Background technique
In OLED device, the lower main cause of device efficiency is exactly that the utilization rate of exciton is relatively low, main
There are two the influences of aspect: on the one hand the reason is that traditional fluorescent material is limited by Quantum geometrical phase, only 25% single line
State exciton can use；And although 100% internal quantum efficiency may be implemented in phosphor material, but it needs an expensive huge sum of money
Belonging to atom can just enable the triplet excitons be obstructed of spin utilize, therefore obtain cheap with 100% internal quantum efficiency
Material becomes research hotspot.On the other hand, the balance of luminescent layer hole and electronics also can the exciton utilization rate to OLED device produce
Raw to influence, the imbalance of carrier can also be such that the efficiency of OLED device reduces, therefore control the carrier transport balance of luminescent layer
Be also to the efficiency for improving OLED device it is helpful, a kind of method provided by the invention is changed by improving internal quantum efficiency
Kind carrier transport balances the promotion to realize device efficiency.
Summary of the invention
The object of the invention is to remedy the disadvantages of known techniques, provides and is total to main body based on B3PYMPM exciplex
Green phosphorescent OLED device efficiency ameliorative way, using B3PYMPM as altogether material of main part be added to green phosphorescent OLED device
In luminescent layer, the exciplex with intermolecular TADF effect is formed, is realized due to introducing electron transport material B3PYMPM
Material cheap and with 100% internal quantum efficiency, and the transmission balance of carrier is realized, to improve green phosphorescence
The efficiency of OLED device.
The present invention is achieved by the following technical solutions:
It is total to the ameliorative way of the green phosphorescent OLED device efficiency of main body based on B3PYMPM exciplex, includes luminescent layer, institute
The luminescent layer stated includes material of main part and object doped luminescent material, and the material of main part uses hole mobile material 4,4-
Two (9- carbazole) biphenyl (4,4'-Bis (N-carbazolyl) -1,1'-biphenyl, CBP) and electron transport material 4,6- is bis-
(3,5- bis- (3- pyridine) base phenyl) -2- methylpyrimidine (4,6-Bis (3,5-di (pyridin-3-yl) phenyl) -2-
Methylpyrimidine, B3PYMPM) exciplex is formed as main body altogether, the object doped luminescent material uses
Green phosphorescent material fac-Ir (ppy)3。
The luminescent layer with a thickness of 30nm, wherein the ratio of the CBP in material of main part and B3PYMPM is that 1:1 is kept
It is constant, object doped luminescent material fac-Ir (ppy)3Concentration be 0.7wt% to 10wt%.
The object doped luminescent material fac-Ir (ppy)3Concentration be 7wt%.
CBP and B3PYMPM and object doped luminescent material fac-Ir (ppy) in the material of main part3It is common to steam
It is plated on the ito glass substrate of green phosphorescent OLED device and forms luminescent layer.
In order to prepare efficient green phosphorescent OLED device, we are prepared for device A, B for testing efficiency, wherein B
For control group.The preparation method of device A, B including the following steps:
Device A:
(ITO/MoO3(10nm)/TAPC(30nm)/CBP(15nm)/CBP:B3PYMPM:fac-Ir(ppy)3,
1:1:7wt%(30nm)/B3PYMPM(40nm)/LiF(1nm)/Al(100nm))；
Operating procedure is as follows:
(1) ultrasonic cleaning of ito glass substrate；
(2) it is dried with nitrogen the ito glass substrate after cleaning, then thermal station is dried；
(3) UV ozone processing is carried out to ito glass substrate；
(4) ito glass substrate of the UV ozone after processed is placed in customization substrate frame, is then placed in coating machine, will plates
Film machine vacuumizes；
(5) MoO is successively plated on ito glass substrate3, TAPC, CBP, EML, B3PYMPM, LiF, Al, wherein EML is luminous
Layer, thickness 30nm, two kinds of material of main part CBP and B3PYMPM ratios of luminescent layer are 1:1, object dopant material fac-Ir (ppy)3
Ratio is 7wt%, and machine to be coated opens the device that coating machine taking-up prepares after dropping to suitable temperature later；
(6) it is packaged to preparing device；
(7) it is tested for the property to preparing device；
Device B as a control group:
(ITO/MoO3(10nm)/TAPC(30nm)/CBP(15nm)CBP:fac-Ir(ppy)3,
4wt%(30nm)/B3PYMPM(40nm)/LiF(1nm)/Al(100nm))；
Be added without B3PYMPM, we the step of it is as follows:
(1) the step of duplicate devices A (1), (2), (3), (4)；
(2) MoO is successively plated on ito glass substrate3, TAPC, CBP, EML, B3PYMPM, LiF, Al, wherein EML is luminous
Layer, thickness 30nm, luminescent layer material of main part is body CBP, objective dopant material fac-Ir (ppy) at this time3Ratio is 7wt%, later to
Coating machine opens the device that coating machine taking-up prepares after dropping to suitable temperature；
(3) it is packaged to preparing device；
(4) it is tested for the property to preparing device；
The principle of the invention is:
Material of main part is done using hole mobile material CBP and electron transport material B3PYMPM simultaneously in green phosphorescent devices to be formed
Exciplex is total to main body, with intermolecular TADF characteristic, to improve the exciton utilization rate and efficiency of device.And using master
The mode of object doping carrys out the concentration of dispersive exciton, reduces the phenomenon that exciton quenches under high illumination.TADF material of main part due to
Can be very poor between lower singlet and triplet state, allow triplet excitons to become singlet by reversed intersystem crossing,
It is effectively utilized the exciton of triplet state, theoretically 100% internal quantum efficiency is realized, so that from material of main part to guest materials
Energy transfer it is more abundant.And another electron transport material B3PYMPM introduced does main body, electron transport ability compared with
By force, it is ensured that the transmission of luminescent layer carrier balances.The green phosphorescence for doing main body by comparing being added and being added without B3PYMPM
The efficiency of OLED device, to obtain joined the effect for the green phosphorescent OLED device that electron transport material B3PYMPM does total main body
Rate is greatly improved.
The invention has the advantages that
The present invention is added to the luminescent layer of green phosphorescent OLED device using electron transport material B3PYMPM as another material of main part
In, the exciplex main body with intermolecular TADF effect is formd, and greatly ensure that the transmission of luminescent layer carrier
Balance, improves the efficiency of device.
Detailed description of the invention
Fig. 1 is the energy diagram of device.
Fig. 2 is the structure chart of device.
Fig. 3 is power efficiency-luminance-current efficiency figure of device.
Fig. 4 is external quantum efficiency-luminance graph of device.
Specific embodiment
As shown in Figure 1, 2, the improvement side of the green phosphorescent OLED device efficiency of main body is total to based on B3PYMPM exciplex
Method, the green phosphorescent OLED device include luminescent layer, and luminescent layer is made of material of main part, object dopant material, it is characterised in that:
Bis- (3,5- bis- (3- pyridine) base the phenyl) -2- methylpyrimidine (4,6-Bis of 4,6- are added to the luminescent layer of green phosphorescent OLED device
(3,5-di (pyridin-3-yl) phenyl) -2-methylpyrimidine, B3PYMPM) it is used as co-host.
Select hole mobile material 4,4- bis- (9- carbazole) biphenyl (4,4'-Bis (N-carbazolyl) -1,1'-
Biphenyl, CBP) and the total main body of electron transport material B3PYMPM formation exciplex conduct, green phosphorescent material fac-Ir
(ppy)3As object dopant material.
Material of main part CBP and B3PYMPM, and object dopant material fac-Ir (ppy)3Total 30nm, wherein material of main part
The ratio of CBP and B3PYMPM remains unchanged for 1:1, object dopant material fac-Ir (ppy)3Concentration arrived for 0.7wt%
10wt%。
Material of main part CBP and B3PYMPM, and object dopant material fac-Ir (ppy)3Total 30nm, wherein material of main part
The ratio of CBP and B3PYMPM is 1:1, object dopant material fac-Ir (ppy)3Concentration be 7wt%.
Material of main part CBP and B3PYMPM, object dopant material fac-Ir (ppy)3Co-evaporation is in green phosphorescent OLED device
Ito glass substrate on form luminescent layer.
It elaborates below to the embodiment of the present invention.The present embodiment is based on technical solution of the present invention, gives in detail
Embodiment and specific operation process.Protection scope of the present invention includes but is not limited to following embodiment.
Referring to Fig. 1,2,3,4, to prepare device A:
(ITO/MoO3(10nm)/TAPC(30nm)/CBP(15nm)/CBP:B3PYMPM:fac-Ir(ppy)3,
1:1:7wt% (30nm)/B3PYMPM (40nm)/LiF (1nm)/Al (100nm)) structure device, we carry out following walk
It is rapid:
(1) cleaning of ITO substrate:
Then the ultrasonic treatment that 30min is carried out in ITO cleaning solution carries out the clear water ultrasonic treatment of 10min in pure water.
(2) heating, drying:
After the cleaning of ITO substrate, the water on ito glass substrate is blown clean using nitrogen, then with 120 degree in thermal station
Heat 10min.
(3) UV ozone is handled:
Behind step (1), (2), 20min is arrived using ultraviolet rays cleaning machine processing ITO substrate 10, to remove ITO substrate table
The organic substance residues in face and the hydroxyl quantity for increasing ITO substrate surface, while effectively improving the work function on the surface ITO.
(4) after step (1), (2), (3) are processed, ITO substrate is placed in substrate frame ito glass substrate by we
It moves back into high vacuum coating unit chamber, the vacuum degree of chamber is promoted to 3.5 × 10 later-6 Torr, then with 1/s,
1.2/s, 1.2/s, 1.2/s, 0.4/s, 1/s rate MoO is successively deposited3, TAPC, CBP, B3PYMPM, LiF and
Al, each thicknesses of layers are respectively 10 nm, 30 nm, 15 nm, 40 nm, 1nm, 100nm.And based on luminescent layer material C BP with
B3PYMPM, and object dopant material fac-Ir (ppy)3Total 30nm, wherein the ratio of material of main part CBP and B3PYMPM is 1:
1, object dopant material fac-Ir (ppy)3Concentration be 7wt%.After the completion of plated film, machine to be coated opens plating after dropping to suitable temperature
Film machine takes out device.
(5) device is packaged:
The device after the completion of plated film is taken out, the glass cover-plate and device base of uv-curable glue will be coated in the environment full of nitrogen
Piece carry out it is viscous viscous, after irradiate 3min under ultraviolet light and solidified.
(6) packaged device is tested for the property, obtained test result is as shown in A device in Fig. 2 and 3.
For preparing control device B:
(ITO/MoO3(10nm)/TAPC(30nm)/CBP(15nm)/CBP:fac-Ir(ppy)3,
7wt% (30nm)/B3PYMPM (40nm)/LiF (1nm)/Al (100nm)) structure device, the present invention steps are as follows:
(1) the step of preparing device A (1), (2), (3) are repeated.
(2) after step (1), (2), (3) are processed, ITO substrate is placed in substrate frame ito glass substrate by we
It moves back into high vacuum coating unit chamber, the vacuum degree of chamber is promoted to 3.5 × 10 later-6Torr, then with 1/s,
1.2/s, 1.2/s, 1.2/s, 0.4/s, 1/s rate MoO is successively deposited3, TAPC, CBP, B3PYMPM, LiF and
Al, each thicknesses of layers are respectively 10 nm, 30 nm, 15 nm, 40 nm, 1nm, 100nm.And luminescent layer is material based on CBP,
fac-Ir(ppy)3For object dopant material, with a thickness of 30nm, wherein green phosphor material fac-Ir (ppy)3Ratio be 7wt%.
After the completion of plated film, machine to be coated opens coating machine taking-up device after dropping to suitable temperature.
(3) device is packaged:
The device after the completion of plated film is taken out, the glass cover-plate and device base of uv-curable glue will be coated in the environment full of nitrogen
Piece carry out it is viscous viscous, after irradiation 3min is solidified under ultraviolet light again.
(4) packaged device is tested for the property, obtained test result is as shown in B device in Fig. 2 and 3.
By the performance test to device A and B, as shown in Figures 3 and 4, available device A and no addition B3PYMPM
The device B for doing main body is compared, joined the device A of B3PYMPM power efficiency, current efficiency, EQE be respectively 86.32lm/W,
82.43cd/A, 24%, and be not added the power efficiency, current efficiency, EQE of the device B of B3PYMPM only have respectively 48.48lm/W,
46.29cd/A, 13.92%, this explanation addition B3PYMPM and CBP formation exciplex in green phosphorescent devices, which is total to main body, to be shown
It writes and promotes its efficiency.
Claims (4)
1. being total to the ameliorative way of the green phosphorescent OLED device efficiency of main body based on B3PYMPM exciplex, it is characterised in that: packet
Luminescent layer is included, the luminescent layer has material of main part and object doped luminescent material, and the material of main part is passed using hole
Defeated material 4,4- bis- (9- carbazole) biphenyl (4,4'-Bis (N-carbazolyl) -1,1'-biphenyl, CBP) and electron-transport
Bis- (3,5- bis- (3- pyridine) base the phenyl) -2- methylpyrimidine (4,6-Bis (3,5-di (pyridin-3-yl) of material 4,6-
Phenyl) -2-methylpyrimidine, B3PYMPM) exciplex is formed as main body altogether, the object adulterates hair
Luminescent material uses green phosphorescent material fac-Ir (ppy)3。
2. the green phosphorescent OLED device efficiency according to claim 1 for being total to main body based on B3PYMPM exciplex is changed
Kind method, it is characterised in that: the luminescent layer with a thickness of 30nm, the wherein ratio of the CBP in material of main part and B3PYMPM
For 1:1, object doped luminescent material fac-Ir (ppy)3Concentration be 0.7wt% to 10wt%.
3. the green phosphorescent OLED device efficiency according to claim 2 for being total to main body based on B3PYMPM exciplex is changed
Kind method, it is characterised in that: the object doped luminescent material fac-Ir (ppy)3Concentration be 7wt%.
4. the green phosphorescent OLED device efficiency according to claim 3 for being total to main body based on B3PYMPM exciplex is changed
Kind method, it is characterised in that: CBP and B3PYMPM and object doped luminescent material fac-Ir in the material of main part
(ppy)3Co-evaporation forms luminescent layer on the ito glass substrate of green phosphorescent OLED device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054132A (en) * | 2020-09-01 | 2020-12-08 | 合肥工业大学 | Method for improving efficiency of green phosphorescent OLED device based on DMAC-DPS exciplex host |
| CN113675358A (en) * | 2021-07-28 | 2021-11-19 | 合肥工业大学 | Method for improving efficiency of green phosphorescent OLED device based on exciplex host of B4PYMPM |
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| CN107408634A (en) * | 2015-02-17 | 2017-11-28 | 首尔大学校产学协力团 | Include the organic light emitting apparatus of matrix, phosphorescent dopants and fluorescent dopants |
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| CN107408634A (en) * | 2015-02-17 | 2017-11-28 | 首尔大学校产学协力团 | Include the organic light emitting apparatus of matrix, phosphorescent dopants and fluorescent dopants |
| US20170062752A1 (en) * | 2015-08-27 | 2017-03-02 | Samsung Electronics Co., Ltd. | Thin film and organic light-emitting device including the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112054132A (en) * | 2020-09-01 | 2020-12-08 | 合肥工业大学 | Method for improving efficiency of green phosphorescent OLED device based on DMAC-DPS exciplex host |
| CN113675358A (en) * | 2021-07-28 | 2021-11-19 | 合肥工业大学 | Method for improving efficiency of green phosphorescent OLED device based on exciplex host of B4PYMPM |
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