CN110517236A - A kind of method of precise positioning defective locations - Google Patents
A kind of method of precise positioning defective locations Download PDFInfo
- Publication number
- CN110517236A CN110517236A CN201910762862.0A CN201910762862A CN110517236A CN 110517236 A CN110517236 A CN 110517236A CN 201910762862 A CN201910762862 A CN 201910762862A CN 110517236 A CN110517236 A CN 110517236A
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- layer
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- front layer
- shooting area
- precise positioning
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Abstract
The present invention provides a kind of method of precise positioning defective locations, and the position of former layer defects is that origin establishes rectangular coordinate system；By the shooting area grid dividing of front layer, calculates the occupied grid number of shooting area and all grids are numbered in order and are that shooting unit is shot one by one by grid；Calculate the polarization value of front layer and the front layer shooting area；Layer after being shot with the identical sizing grid and polarization value, and all grids of rear layer are numbered in that same order；By the corresponding grid to the rear layer number of the number of grid where the defect of front layer, the position where rear layer defects is found out, shoots and saves.The present invention efficiently solves the rear layer orientation problem of microsize defect, improves detection accuracy.
Description
Technical field
The present invention relates to a kind of field of semiconductor manufacture, more particularly to a kind of method of precise positioning defective locations.
Background technique
With the further development of semiconductor technology, the size of defect is smaller and smaller, when rear station is checked to machine operations
The required precision of platform is higher and higher.At this stage when fixed point checks defect on the older board of model, it is easy to happen deviation, nothing
Method accurately navigates to defect at rear station.Exist as shown in Figure 1, Fig. 1 a and Fig. 1 b are shown as present invention defect in the prior art
The electronic chart that forward and backward station checks.Whether the small sized defects in corresponding region will cause shadow in the rear a certain layer (such as aperture layer) in station
It rings, because of the repeatability of defective locations, and checks that the precision of board is inadequate, can not determine the accuracy of inspection, it can not with E-Bean
The corresponding position of defect is just looked in scanning.
It is, therefore, desirable to provide a kind of new method solves the above problems.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of precise positioning defective locations
Method can not stand firm a defective locations because flaw size is small afterwards again in the prior art for solving the problems, such as.
In order to achieve the above objects and other related objects, the present invention provides a kind of method of precise positioning defective locations, should
Method at least includes the following steps: Step 1: the position of layer defects is that origin establishes rectangular coordinate system in the past；Step 2: by institute
The shooting area grid dividing for stating front layer calculates the occupied grid number of the shooting area and compiles in order to all grids
Number and by grid be shooting unit shoot one by one；Step 3: calculating the polarization value of front layer and the front layer shooting area；Step 4:
With layer after the identical sizing grid and polarization value shooting, and to all grids of layer after described according to in step 2
Identical sequence is numbered；Step 5: by the corresponding net to the rear layer number of the number of grid where the defect of the front layer
Lattice find out the position where rear layer defects, shoot and save.
Preferably, the shooting area of front layer described in step 2 is that board once shoots the region for forming a photo.
Preferably, according to from left to right in step 2, the grid is numbered in snakelike sequence from top to bottom.
Preferably, according to from right to left in step 2, the grid is numbered in snakelike sequence from top to bottom.
Preferably, the polarization value of the front layer and the front layer shooting area include: the front layer top edge and it is described before
The transverse direction of the left edge of the left edge and front layer shooting area of the fore-and-aft distance and front layer of layer shooting area top edge
Distance.
Preferably, the grid is square grid, grid and identical lateral distance in step 4 with identical side length
With the polarization value shooting rear layer of fore-and-aft distance.
Preferably, the rear layer is aperture layer.
As described above, the method for precise positioning defective locations of the invention, has the advantages that using gridding
Photograph method, and the picture of each gridding is numbered, polarization of taking pictures identical with front layer is used in rear layer later
Value and identical grid number, can be by the defective locations of front layer correspondence to rear layer, after efficiently solving microsize defect
Layer orientation problem, improves detection accuracy.
Detailed description of the invention
Fig. 1 a and Fig. 1 b are shown as the electronic chart that present invention defect in the prior art checks at forward and backward station；
Fig. 2 is shown as defect of the invention in the schematic diagram of front layer；
Fig. 3 is shown as the polarization value schematic diagram of front layer Yu the front layer shooting area；
Fig. 4 is shown as rear layer defects location diagram；
Fig. 5 is shown as defect in the data comparison schematic diagram of front layer and back layer.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 2 is please referred to Fig. 5.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of method of precise positioning defective locations, and this method at least includes the following steps:
Step 1: the position of layer defects is that origin establishes rectangular coordinate system in the past；The position of preceding layer defects is in graphics intensive
Area.Defect of the invention is shown as in the schematic diagram of front layer with reference to Fig. 2, Fig. 2.
Step 2: the shooting area grid dividing of the front layer is calculated the occupied grid number of the shooting area
And all grids are numbered in order and are that shooting unit is shot one by one by grid；The shooting area of front layer described in step 2 is
Board once shoots the region for forming a photo.That is primary institute is imaged to the graphics field comprising defect in detection board
By institute's difference, general shot region is chip front layer figure for the graphics field of the region covered, the region and real chip front layer
The a part in shape region.According to from left to right in step 2, the grid is numbered in snakelike sequence from top to bottom.Also
That is, the first row first grid number in upper left side is 1, then second grid number of the first row is 2, and so on the first row most
The number of the latter grid is n, is then n+1 to the last one grid of the second row number, then to two row penultimates
Grid number is n+2, and so on, to first grid number of the third line after the second grid of row first number.
Step 3: calculating the polarization value of front layer and the front layer shooting area；The front layer is inclined with the front layer shooting area
Positive value includes: top edge and the fore-and-aft distance of front layer shooting area top edge and the left edge of the front layer of the front layer
With the lateral distance of the left edge of the front layer shooting area.As shown in figure 3, Fig. 3 is shown as front layer and the front layer shooting area
Polarization value schematic diagram, as previously mentioned, the shooting area of front layer and front layer difference, the shooting area of front layer in the present embodiment
Range be less than chip before layer pattern region, therefore, polarization value described in the present embodiment are as follows: the boundary of front layer shooting area with
The horizontal and vertical distance of the front layer graphic limit, that is, the top edge and front layer shooting area top edge of the front layer
Fore-and-aft distance Y and the front layer the left edge and front layer shooting area left edge lateral distance X.
Step 4: with layer after the identical sizing grid and polarization value shooting, and to all nets of the rear layer
Lattice are numbered according to sequence identical in step 2；The shape of grid described in the present embodiment is square, and therefore, is divided
Grid used in layer is also identical as the size of grid used in front layer is divided afterwards, that is, the side length of grid is identical.By rear layer
Graphics field is consistent with front layer with the shooting area positioning of rear layer, i.e., the top edge of rear layer and the rear layer shooting area top
The lateral distance X of the left edge of the left edge of the fore-and-aft distance Y of edge and the rear layer and the rear layer shooting area.Have good positioning it
Afterwards with grid dividing identical with front layer.To all grids of layer after described according to sequence identical with front layer described in step 2
It is numbered, also that is, according to from left to right, the grid is numbered in snakelike sequence from top to bottom.Upper left side the first row
First grid number is 1, and then second grid number of the first row is 2, and so on the first row the last one grid volume
Number be n, then to the last one grid of the second row number be n+1, then to two row penultimate grids number be n+2,
And so on, to first grid number of the third line after the second grid of row first number.
Step 5: the corresponding grid to the rear layer number of the number of grid where the defect of the front layer is found out rear layer
Position where defect shoots and saves.Layer is aperture layer after described.After the grid of layer is numbered afterwards, what rear layer defects were fallen into
Grid is just consistent with the grid number where the defect of the front layer, and the grid where preceding layer defects is numbered accordingly rear
The position where the grid of the number is found in layer, and shooting preservation is carried out to the grid where the defect later.
As a result as shown in figure 5, Fig. 5 is shown as defect in the data comparison schematic diagram of front layer and back layer.It can be seen that using
The photograph method of gridding, and the picture of each gridding is numbered, later in rear layer using identical with front layer
Polarization value of taking pictures and identical grid number, can be corresponding to rear layer by the defective locations of front layer, efficiently solves microsize
The rear layer orientation problem of defect improves detection accuracy.
The present invention also provides another embodiment, the method for the precise positioning defective locations of the present embodiment has following steps:
Step 1: the position of layer defects is that origin establishes rectangular coordinate system in the past；As shown in Fig. 2, Fig. 2 is shown as the present invention
Defect next stop schematic diagram.The position of preceding layer defects is in graphics intensive area.
Step 2: the shooting area grid dividing of the front layer is calculated the occupied grid number of the shooting area
And all grids are numbered in order and are that shooting unit is shot one by one by grid；Usually detection board is to the figure comprising defect
The graphics field of the region that regional imaging is once covered, the region and real chip front layer is by institute's difference, area of generally taking pictures
Domain is a part of chip front layer graphics field.According to from right to left in step 2, snakelike sequence from top to bottom is to the net
Lattice are numbered.The shooting area of the front layer takes the photograph the region formed by the picture of once photo taking.The step and above-mentioned implementation
Example the difference is that, the present embodiment is different to the number order of the picture of the gridding of front layer, be according to from right to left, from upper
Serial number under, such as: most the last one grid of upper right side the first row number is 1, the first row penultimate grid
Number is 2, and the number of the first row third last grid is 3, and so on, the number of the first row first left grid is n,
It is later n+1 to the number of two first grid of row, the number of the second row second left grid is n+2, and so on.
Step 3: calculating the polarization value of front layer and the front layer shooting area；The front layer is inclined with the front layer shooting area
Positive value includes: top edge and the fore-and-aft distance of front layer shooting area top edge and the left edge of the front layer of the front layer
With the lateral distance of the left edge of the front layer shooting area.
Step 4: with layer after the identical sizing grid and polarization value shooting, and to all nets of the rear layer
Lattice are numbered according to sequence identical in step 2；The application of the polarization value and sizing grid in the step with it is above-mentioned
Usage in embodiment is consistent.
Step 5: the corresponding grid to the rear layer number of the number of grid where the defect of the front layer is found out rear layer
Position where defect shoots and saves.Layer is aperture layer after described.
As a result as shown in figure 5, using gridding photograph method, the picture of each gridding is numbered, In
Layer is corresponded to the defective locations of front layer to rear layer using identical with front layer take pictures polarization value and identical grid number afterwards, can
To efficiently solve the rear layer orientation problem of microsize defect, detection accuracy is improved.
In conclusion the present invention uses the photograph method of gridding, and the picture of each gridding is numbered,
It, can be corresponding by the defective locations of front layer later in rear layer using identical with front layer take pictures polarization value and identical grid number
To rear layer, the rear layer orientation problem of microsize defect is efficiently solved, improves detection accuracy.So effective gram of the present invention
It has taken various shortcoming in the prior art and has had high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (7)
1. a kind of method of precise positioning defective locations, which is characterized in that this method at least includes the following steps:
Step 1: the position of layer defects is that origin establishes rectangular coordinate system in the past；
Step 2: calculating the occupied grid number of the shooting area and pressing the shooting area grid dividing of the front layer
Sequence numbers all grids and is that shooting unit is shot one by one by grid；
Step 3: calculating the polarization value of front layer and the front layer shooting area；
Step 4: being pressed with layer after the identical sizing grid and polarization value shooting, and to all grids of the rear layer
It is numbered according to sequence identical in step 2；
Step 5: the corresponding grid to the rear layer number of the number of grid where the defect of the front layer is found out rear layer defects
The position at place shoots and saves.
2. the method for precise positioning defective locations according to claim 1, it is characterised in that: front layer described in step 2
Shooting area is that board once shoots the region for forming a photo.
3. the method for precise positioning defective locations according to claim 2, it is characterised in that: in step 2 according to from a left side to
The grid is numbered in the right side, snakelike sequence from top to bottom.
4. the method for precise positioning defective locations according to claim 2, it is characterised in that: in step 2 according to from the right side to
The grid is numbered in a left side, snakelike sequence from top to bottom.
5. the method for precise positioning defective locations according to claim 2, it is characterised in that: the front layer and the front layer are clapped
Take the photograph region polarization value include: the top edge of the front layer and the fore-and-aft distance of front layer shooting area top edge and this before
The lateral distance of the left edge of the left edge and front layer shooting area of layer.
6. the method for precise positioning defective locations according to claim 5, it is characterised in that: the grid is square net
Lattice, in step 4 with the grid of identical side length and identical lateral distance and the shooting of the polarization value of fore-and-aft distance it is described after layer.
7. the method for precise positioning defective locations according to claim 1, it is characterised in that: layer is aperture layer after described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910762862.0A CN110517236A (en) | 2019-08-19 | 2019-08-19 | A kind of method of precise positioning defective locations |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910762862.0A CN110517236A (en) | 2019-08-19 | 2019-08-19 | A kind of method of precise positioning defective locations |
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| CN110517236A true CN110517236A (en) | 2019-11-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115184726A (en) * | 2022-07-12 | 2022-10-14 | 安徽省万企天成科技有限公司 | Intelligent power grid fault real-time monitoring and positioning system and method |
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| JP2015105930A (en) * | 2013-12-02 | 2015-06-08 | 旭硝子株式会社 | Minute defect inspection method for translucent substrate and minute defect inspection device for translucent substrate |
| CN106770357A (en) * | 2016-11-22 | 2017-05-31 | 上海华力微电子有限公司 | Improve method, sample and the preparation method of light emission microscope opposite side locating effect |
| CN109490758A (en) * | 2018-12-12 | 2019-03-19 | 上海华力集成电路制造有限公司 | A kind of localization method of short-circuit failure |
| CN109659248A (en) * | 2018-12-19 | 2019-04-19 | 上海华力集成电路制造有限公司 | Method of the defect to graph layer setting accuracy on raising mating plate |
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Patent Citations (5)
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| CN102607446A (en) * | 2011-10-21 | 2012-07-25 | 中建工业设备安装有限公司 | Method for measuring steel structure welding deformation based on gridding |
| JP2015105930A (en) * | 2013-12-02 | 2015-06-08 | 旭硝子株式会社 | Minute defect inspection method for translucent substrate and minute defect inspection device for translucent substrate |
| CN106770357A (en) * | 2016-11-22 | 2017-05-31 | 上海华力微电子有限公司 | Improve method, sample and the preparation method of light emission microscope opposite side locating effect |
| CN109490758A (en) * | 2018-12-12 | 2019-03-19 | 上海华力集成电路制造有限公司 | A kind of localization method of short-circuit failure |
| CN109659248A (en) * | 2018-12-19 | 2019-04-19 | 上海华力集成电路制造有限公司 | Method of the defect to graph layer setting accuracy on raising mating plate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115184726A (en) * | 2022-07-12 | 2022-10-14 | 安徽省万企天成科技有限公司 | Intelligent power grid fault real-time monitoring and positioning system and method |
| CN115184726B (en) * | 2022-07-12 | 2023-11-28 | 广东中曼新能源科技有限公司 | Smart power grid fault real-time monitoring and positioning system and method |
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