CN110515966A - The method for fast establishing of high matching degree scanning formula between Defect Scanning board - Google Patents
The method for fast establishing of high matching degree scanning formula between Defect Scanning board Download PDFInfo
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- CN110515966A CN110515966A CN201910809109.2A CN201910809109A CN110515966A CN 110515966 A CN110515966 A CN 110515966A CN 201910809109 A CN201910809109 A CN 201910809109A CN 110515966 A CN110515966 A CN 110515966A
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- H01L22/10—Measuring as part of the manufacturing process
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Abstract
The present invention provides a kind of method for fast establishing of matching degree high between Defect Scanning board scanning formula, including, a wafer is provided；Defect Scanning is carried out to wafer using standard scan formula；Defect Scanning is carried out to wafer using examination scanning formula；Scanning result is swept in examination to match with standard scan result；According to matching result, selection filtration parameter is swept scanning result to examination and is filtered；According to filtered as a result, calculating the actual match degree between board to be matched and standard board；Judge whether actual match degree is greater than or equal to preset matching degree, if actual match degree is greater than or equal to preset matching degree, is adjusted according to the scanning formula that filtration parameter treats matching board；If actual match degree is less than preset matching degree, selection filtration parameter is swept scanning result to examination and is filtered again.The present invention can efficiently be quickly obtained the scanning formula of high matching degree, so as to be released effectively board production capacity, save the time, reduce manpower consumption.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to high matching degree scanning formula is quick between Defect Scanning board
Method for building up.
Background technique
In recent years, as the rapid development of semiconductor integrated circuit and critical size are scaled, manufacturing process
Become more complicated.Currently advanced integrated circuit fabrication process generally all includes several hundred a processing steps, one of step
Suddenly going wrong will cause the defect of entire semiconductor integrated circuit chip on wafer to occur, serious to be also possible to cause entirely
The failure of chip, so in the manufacturing process of semiconductor integrated circuit, to product manufacture the problem of carry out and
When find just to be particularly important.Based on above-mentioned consideration, industry generally controls lacking in manufacturing process by defects detection
The problem of falling into, Lai Tisheng product yield.
Industry generally passes through scanning machine and carries out Defect Scanning to wafer under certain scanning formula, and scanning is obtained
Defects count compared with control limit, it is corresponding to carry out in time to judge whether the defect on wafer exceeds control standard
Processing.
The mechanism of Defect Scanning is mainly incident on crystal column surface with optical electrical, collects reflection/scattering optical electrical, obtains
One gray level image in contrast by adjacent unit or standard block obtains gray difference value, carries out further according to the threshold value of setting
Judgement is considered defect when a threshold is exceeded.
In the prior art, several Defect Scanning boards for Yield lmproved are equipped on each semiconductor production line, respectively
Different products, different production lines, even different process procedures are corresponded to, is designed on every Defect Scanning board very more
Scanning formula, the Defect Scanning of certain corresponding class product, a certain layer structure.
Scanning formula is to establish the basis of rationally efficient defect detecting system, on investigation, analysis and feedback production line
The defect situation for influencing product yield plays a crucial role.But it is changed as Defect Scanning board constantly upgrades and updates
Generation, the capturing ability and fineness of defect are higher and higher, therefore bring centainly between the matching of scanning result different shaped board
Difficulty.
The method taken at present mainly rule of thumb summarize and empirical value establish scanning formula, later collect defective data into
Comparison between row board, difference, then be scanned the optimization of formula until reaching the matching between board if it exists.Existing method
There are probelem in two aspects: firstly, since the upgrading of board, the definition of threshold value difference, therefore be difficult according to original machine type
Threshold value is set；Secondly as matching degree is difficult to settle at one go with reference to less, need by repeatedly optimizing, waste of manpower and
Time.
Summary of the invention
The purpose of the present invention is to provide matching degree high between a kind of Defect Scanning board scanning formula method for fast establishing,
It can be efficiently quickly obtained the scanning formula of high matching degree, so as to discharge board production capacity, save the time, reduce manpower
Consumption.
In order to achieve the above objectives, the present invention provides a kind of quick foundation of high matching degree scanning formula between Defect Scanning board
Method, comprising:
One wafer is provided；
Defect Scanning is carried out to the wafer using established standard scan formula on standard board, to obtain standard
Scanning result；
Defect Scanning is carried out to the wafer using newly-established examination scanning formula on board to be matched, to obtain examination
Sweep scanning result；
Scanning result is swept in the examination to match with the standard scan result, to obtain matching result；
According to the matching result, choose filtration parameter scanning result swept to the examination and be filtered, with filter out with it is described
The unmatched defect of standard scan result；
According to filtered as a result, calculating the actual match degree between the board to be matched and the standard board；With
And
Judge whether the actual match degree is greater than or equal to the preset matching degree, if the actual match degree be greater than or
Equal to preset matching degree, then it is adjusted according to examination scanning formula of the filtration parameter to the board to be matched, thus
Obtain the scanning formula of high matching degree；If the actual match degree is less than preset matching degree, filtration parameter is chosen again to institute
It states examination and sweeps scanning result and be filtered, until the actual match degree is greater than or equal to the preset matching degree.
Optionally, before carrying out Defect Scanning to the wafer, the method also includes:
Partition is carried out according to graphic feature to the wafer, to form each scanning area, wherein different scanning areas pair
Answer different sweep parameters.
Optionally, the graphic feature corresponds to the difference formed on the wafer to realize different calculation functions
The circuitous pattern of functional area.
Optionally, the functional area includes the region LOGIC, the region FULL, the region SRAM and the region PIXEL.
Optionally, after obtaining the standard scan result, the method also includes:
The standard scan result is uploaded to database, scanning result is stored in the database and scans formula
Corresponding relationship.
Optionally, before the examination to be swept to scanning result and is matched with the standard scan result, the method is also
Include:
The standard scan result of the wafer is read from the database.
Optionally, the corresponding relationship of Scan Architecture layer and scanning result is also stored in the database.
Optionally, the preset matching degree is 80%-100%.
Optionally, before carrying out Defect Scanning to the wafer, the method also includes:
The wafer is aligned with the board.
Optionally, make the board and the wafer alignment by the way that alignment mark is arranged on the wafer.
Compared with prior art, between Defect Scanning board provided by the invention high matching degree scanning formula quick foundation side
Method has the advantage that the present invention by providing a wafer, first uses established standard scan formula pair on standard board
The wafer carries out Defect Scanning, to obtain standard scan result；Then it is swept on board to be matched using newly-established examination
It retouches formula and Defect Scanning is carried out to the wafer, sweep scanning result to obtain examination；Scanning result and the mark are swept into the examination again
Quasi- scanning result is matched, to obtain matching result；Further according to the matching result, chooses filtration parameter and the examination is swept
It retouches result to be filtered, to filter out and the unmatched defect of standard scan result；Finally further according to filtered as a result, meter
Calculate the actual match degree between the board to be matched and the standard board, and judge the actual match degree whether be greater than or
Equal to preset matching degree, if the actual match degree is greater than or equal to preset matching degree, according to the filtration parameter to described
The examination scanning formula of board to be matched is adjusted, to obtain the high matching degree scanning formula of the board to be matched；If
The actual match degree is less than preset matching degree, then chooses filtration parameter again and the examination is swept scanning result and is filtered, directly
It is greater than or equal to preset matching degree to the actual match degree, so as to complete high matching degree scanning pass between Defect Scanning board
The quick foundation of formula.By using method provided by the invention, it can be efficiently quickly obtained the scanning formula of high matching degree, from
And it can be released effectively board production capacity, it saves the time, reduce manpower consumption.
Detailed description of the invention
Fig. 1 high matching degree between the Defect Scanning board of an embodiment of the present invention scans the method for fast establishing of formula
Flow chart；
Fig. 2 is a specific example of Plays scanning result of the present invention；
Fig. 3 is the specific example that scanning result is swept in pilot scale of the present invention；
Fig. 4 is a specific example of the matching result that scanning result and standard scan result are swept in pilot scale of the present invention；
Fig. 5 is to sweep the specific example that scanning result is filtered to the examination using filtration parameter in the present invention.
Specific embodiment
High matching degree between Defect Scanning board proposed by the present invention is swept below in conjunction with attached drawing 1 to 5 and specific embodiment
The method for fast establishing for retouching formula is described in further detail.According to following explanation and claims, advantages of the present invention and
Feature will become apparent from.It should be noted that attached drawing uses very simplified form and uses non-accurate ratio, only to side
Just, the purpose of embodiment of the present invention is lucidly aided in illustrating.
In order to keep objects, features and advantages of the present invention more obvious and easy to understand, attached drawing is please referred to.It should be clear that this explanation
Book structure depicted in this specification institute accompanying drawings, ratio, size etc., only to cooperate the revealed content of specification, for being familiar with this
The personage of technology understands and reads, and is not intended to limit the invention the qualifications of implementation, therefore does not have technical essential meaning,
The modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the effect of present invention can be generated and institute's energy
Under the purpose reached, should all still it fall in the range of disclosed technology contents can cover.
Core of the invention thought is to provide a kind of quick foundation of high matching degree scanning formula between Defect Scanning board
Method, so as to discharge board production capacity, saves the time to be efficiently quickly obtained the scanning formula of high matching degree, reduces
Manpower consumption.
To realize above-mentioned thought, the present invention provides a kind of quick foundation of high matching degree scanning formula between Defect Scanning board
Method, referring to FIG. 1, high matching degree scanning between schematically illustrating the Defect Scanning board that an embodiment of the present invention provides
The flow chart of the method for fast establishing of formula, as shown in Figure 1, high matching degree scans the quick of formula between the Defect Scanning board
Method for building up includes the following steps:
Step S100: a wafer is provided.
Step S200: carrying out Defect Scanning to the wafer using established standard scan formula on standard board,
To obtain standard scan result.
Preferably, in this step, before carrying out Defect Scanning to the wafer, the method also includes: by the crystalline substance
The step of circle is aligned with the standard board.Alignment mark can be specifically set on wafer, in the corresponding portion of standard board
Position setting sensor is aligned.As a result, before Defect Scanning, the wafer is aligned with the standard board, Ke Yijin
The accuracy of one step raising standard scan result.
Preferably, in this step, after obtaining the standard scan result, the method also includes:
The standard scan result is uploaded to database, scanning result is stored in the database and scans formula
Corresponding relationship.As a result, by the way that the standard results are uploaded to database, the standard scan result can be stored,
The standard scan is obtained convenient for subsequent board to be matched as a result, scanning in turn convenient for subsequent standard scan result and examination
As a result comparison.Further, since being stored with scanning result in the database and scanning the corresponding relationship of formula, and then can be so as to
In the subsequent scanning result for reading the standard scan formula from database.
Optionally, the corresponding relationship of Scan Architecture layer and scanning result is also stored in the database.
Step S300: defect is carried out to the wafer using newly-established examination scanning formula on board to be matched and is swept
It retouches, sweeps scanning result to obtain examination.
Preferably, in this step, before carrying out Defect Scanning to the wafer, the method also includes: by the crystalline substance
The step of circle is aligned with the board to be matched.Alignment mark can be specifically set on wafer, in the phase of board to be matched
Position setting sensor is answered to be aligned.As a result, before Defect Scanning, the wafer is aligned with the board to be matched,
It can be further improved the accuracy that scanning result is swept in examination.
Preferably, the examination scanning formula is established referring to the standard scan formula, and examination scanning formula is set
The overall defect number maximum value set is greater than the overall defect number maximum value of standard scan formula setting.
Step S400: scanning result is swept into the examination and is matched with the standard scan result, to obtain matching result.
Preferably, the standard scan result of the wafer can be read from database.
Specifically, coordinate position and the mark of the defect on the wafer in scanning result can be swept according to the examination
Coordinate position of the defect on the wafer in quasi- scanning result, by the examination sweep scanning result and the standard scan result into
Row matching.Fig. 2 is please referred to Fig. 4, wherein Fig. 2 schematically illustrates a specific example of Plays scanning result of the present invention,
Fig. 3 schematically illustrates the specific example that scanning result is swept in pilot scale of the present invention, and Fig. 4, which is schematically illustrated, scans examination
One specific example of the matching result after as a result being matched with standard scan result, as shown in Fig. 2, by using standard scan
Formula is scanned the wafer, scans 25 defects altogether, wherein different gray scales, indicates different types of defect, such as
Shown in Fig. 3, the wafer is scanned by using examination scanning formula, 39 defects are scanned altogether, as shown in figure 4, institute
It states examination and sweeps and share 25 defects in scanning result and match with 25 defects in the standard scan result.Preferably, such as Fig. 4
It is shown, it, can also be according to the standard scan knot when sweeping scanning result and being matched with the standard scan result examination
The corresponding defect kind of each defect sweeps the defects of scanning result to the examination and classifies in fruit.
Step S500: according to the matching result, selection filtration parameter is swept scanning result to the examination and is filtered, with filter
Except with the unmatched defect of standard scan result.
Specifically, the filtration parameter may include direct threshold (threshold value) and characterization defect characteristics
Magnitude (amplitude), energy (energy) etc..
It is filtered referring to FIG. 5, schematically illustrating the present invention and sweeping scanning result to the examination using filtration parameter
A specific example, as shown in figure 5, the defect that defect kind is class0 be need the defect that filters out, thus, it is possible to according to
The defect for trying to sweep scanning result is divided region by the parameters such as amplitude and energy, is tied as shown in figure 5, altogether scanning the examination
The defect of fruit is divided into 4 regions, wherein the defects of region 1 is set as the defect for needing to filter out.
Step S600: according to filtered as a result, calculating the reality between the board to be matched and the standard board
Matching degree.
Wherein, the actual match degree can be swept for the defect total number of the standard scan result with the filtered examination
The ratio of the defect total number of scanning result；The actual match degree can be also defect various types of in the standard scan result
Number sweeps the ratio of the defect counts of the corresponding type in scanning result with the filtered examination.
Step S700: judge whether the actual match degree is greater than or equal to the preset matching degree.
If the actual match degree is greater than or equal to preset matching degree, S800 is thened follow the steps.
Step S800: being adjusted according to examination scanning formula of the filtration parameter to the board to be matched, thus
Obtain the scanning formula of high matching degree.
If the actual match degree is less than preset matching degree, S500-S700 is returned to step, i.e., chooses filtering again
Parameter is swept scanning result to the examination and is filtered, until the actual match degree is greater than or equal to preset matching degree, then executes
Step S800.
It can be seen that the present invention first uses established standard scan formula by providing a wafer on standard board
Defect Scanning is carried out to the wafer, to obtain standard scan result；Then it is swept on board to be matched using newly-established examination
It scans formula and Defect Scanning is carried out to the wafer, sweep scanning result to obtain examination；Again by it is described examination sweep scanning result with it is described
Standard scan result is matched, to obtain matching result；Further according to the matching result, chooses filtration parameter and the examination is swept
Scanning result is filtered, to filter out and the unmatched defect of standard scan result；Finally further according to filtered as a result,
The actual match degree between the board to be matched and the standard board is calculated, and judges whether the actual match degree is greater than
Or it is equal to preset matching degree, if the actual match degree is greater than or equal to preset matching degree, according to the filtration parameter to institute
The examination scanning formula for stating board to be matched is adjusted, to obtain the high matching degree scanning formula of the board to be matched；
If the actual match degree is less than preset matching degree, selection filtration parameter is swept scanning result to the examination and is filtered again,
Until the actual match degree is greater than or equal to preset matching degree, so as to complete high matching degree scanning between Defect Scanning board
The quick foundation of formula.By using method provided by the invention, it can be efficiently quickly obtained the scanning formula of high matching degree,
So as to be released effectively board production capacity, saves the time, reduces manpower consumption.
Preferably, before executing step S200, the method also includes: the wafer is drawn according to graphic feature
Area, to form each scanning area, wherein different scanning areas corresponds to different sweep parameters.
As a result, by being divided to the wafer according to graphic feature, to form each scanning area, and different scanning
Region corresponds to different sweep parameters, so as to improve the accuracy of defects detection with it is comprehensive.
Preferably, the graphic feature corresponds to the difference formed on the wafer to realize different calculation functions
The circuitous pattern of functional area.
Optionally, the functional area includes the region LOGIC, the region FULL, the region SRAM and the region PIXEL.Wherein
LOGIC (logic) region is the region for realizing logical operation, and (vacant) region FULL is for chemical grinding control centre edge
The region of thickness, (storage) region SRAM are repetitive structure for storing data, and (pixel) region PIXEL is to realize optical signal
The region of a signal is converted to, each functional area is corresponding with each scanning area.Different regions can obtain different ashes
Rank image, for example, LOGIC (logic) regional graphics are irregular and the image of feedback is most bright；(vacant) region FULL is that bulk is empty
Spacious region；(storage) region SRAM is intensive repetition rectangular pattern, and color is brighter；(pixel) region PIXEL is intensive weight
Multiple figure, but color is dark compared with the region SRAM.
Corresponding, the actual match degree can be also the defect counts and mistake of each scanning area in the standard scan result
The ratio of the defect counts of corresponding scanning area in scanning result is swept in the examination after filter.
It preferably, can be according to filtered knot after sweeping scanning result to the examination using filtration parameter and being filtered
Fruit calculates separately the defect total number and the filtered defect total number for trying to sweep scanning result of the standard scan result
Ratio, various types of defect counts sweep corresponding kind in scanning result with the filtered examination in the standard scan result
The defect counts of each scanning area and the filtered examination in the ratio of the defect counts of class and the standard scan result
The ratio of the defect counts of corresponding scanning area in scanning result is swept, and judges whether these ratios are greater than or equal to institute respectively
State preset matching degree, if these ratios be all larger than or be equal to the preset matching degree, judge the actual match degree be greater than or
Equal to the preset matching degree, which is final filtration parameter, so can according to the filtration parameter to it is described to
The examination scanning formula of matching board is adjusted, to obtain the high matching degree scanning formula of the board to be matched.As a result,
Such setting can be further improved the matching degree between Defect Scanning board.
In conclusion the present invention first uses established standard scan formula by providing a wafer on standard board
Defect Scanning is carried out to the wafer, to obtain standard scan result；Then it is swept on board to be matched using newly-established examination
It scans formula and Defect Scanning is carried out to the wafer, sweep scanning result to obtain examination；Again by it is described examination sweep scanning result with it is described
Standard scan result is matched, to obtain matching result；Further according to the matching result, chooses filtration parameter and the examination is swept
Scanning result is filtered, to filter out and the unmatched defect of standard scan result；Finally further according to filtered as a result,
The actual match degree between the board to be matched and the standard board is calculated, and judges whether the actual match degree is greater than
Or it is equal to preset matching degree, if the actual match degree is greater than or equal to preset matching degree, according to the filtration parameter to institute
The examination scanning formula for stating board to be matched is adjusted, to obtain the high matching degree scanning formula of the board to be matched；
If the actual match degree is less than preset matching degree, selection filtration parameter is swept scanning result to the examination and is filtered again,
Until the actual match degree is greater than or equal to preset matching degree, so as to complete high matching degree scanning between Defect Scanning board
The quick foundation of formula.By using method provided by the invention, it can be efficiently quickly obtained the scanning formula of high matching degree,
So as to be released effectively board production capacity, saves the time, reduces manpower consumption.
Foregoing description is only the description to better embodiment of the present invention, not to any restriction of the scope of the invention, originally
Any change, the modification that the those of ordinary skill of invention field does according to the disclosure above content, belong to the guarantor of claims
Protect range.Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these modification and variations.
Claims (10)
1. the method for fast establishing of high matching degree scanning formula between Defect Scanning board characterized by comprising
One wafer is provided；
Defect Scanning is carried out to the wafer using established standard scan formula on standard board, to obtain standard scan
As a result；
Defect Scanning is carried out to the wafer using newly-established examination scanning formula on board to be matched, is swept with obtaining examination
Retouch result；
Scanning result is swept in the examination to match with the standard scan result, to obtain matching result；
According to the matching result, selection filtration parameter is swept scanning result to the examination and is filtered, to filter out and the standard
The unmatched defect of scanning result；
According to filtered as a result, calculating the actual match degree between the board to be matched and the standard board；And
Judge whether the actual match degree is greater than or equal to preset matching degree, is preset if the actual match degree is greater than or equal to
Matching degree is then adjusted, to obtain high according to examination scanning formula of the filtration parameter to the board to be matched
Scanning formula with degree；If the actual match degree is less than preset matching degree, filtration parameter is chosen again, the examination is swept
It retouches result to be filtered, until the actual match degree is greater than or equal to the preset matching degree.
2. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 1
It is, before carrying out Defect Scanning to the wafer, the method also includes:
Partition is carried out according to graphic feature to the wafer, to form each scanning area, wherein different scanning areas is corresponding not
Same sweep parameter.
3. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 2
It is, the graphic feature corresponds to the different function region formed on the wafer to realize different calculation functions
Circuitous pattern.
4. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 3
It is, the functional area includes the region LOGIC, the region FULL, the region SRAM and the region PIXEL.
5. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 1
It is, after obtaining the standard scan result, the method also includes:
The standard scan result is uploaded to database, it is corresponding with scanning formula that scanning result is stored in the database
Relationship.
6. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 5
It is, before the examination to be swept to scanning result and is matched with the standard scan result, the method also includes:
The standard scan result of the wafer is read from the database.
7. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 5
It is, the corresponding relationship of Scan Architecture layer and scanning result is also stored in the database.
8. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 1
It is, the preset matching degree is 80%-100%.
9. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 1
It is, before carrying out Defect Scanning to the wafer, the method also includes:
The wafer is aligned with the board.
10. the method for fast establishing of high matching degree scanning formula, feature between Defect Scanning board according to claim 9
It is, makes the board and the wafer alignment by the way that alignment mark is arranged on the wafer.
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| CN116230576A (en) * | 2023-05-08 | 2023-06-06 | 粤芯半导体技术股份有限公司 | Method for quickly establishing dark field defect scanning detection system |
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| CN112991259A (en) * | 2021-01-29 | 2021-06-18 | 合肥晶合集成电路股份有限公司 | Method and system for detecting defects of semiconductor manufacturing process |
| CN116230576A (en) * | 2023-05-08 | 2023-06-06 | 粤芯半导体技术股份有限公司 | Method for quickly establishing dark field defect scanning detection system |
| CN116230576B (en) * | 2023-05-08 | 2023-07-07 | 粤芯半导体技术股份有限公司 | Method for quickly establishing dark field defect scanning detection system |
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