CN110492002A - 一种背接触无掺杂异质结-钙钛矿叠层太阳电池 - Google Patents
一种背接触无掺杂异质结-钙钛矿叠层太阳电池 Download PDFInfo
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Abstract
本发明公开了一种背接触无掺杂异质结‑钙钛矿叠层太阳电池，属于太阳能电池技术领域，目的在于克服现有技术中的不足之处，提供一种背接触无掺杂异质结‑钙钛矿叠层太阳电池，其采用顶部宽带隙1.5‑2.5ev钙钛矿太阳电池和底部窄带隙1.12ev硅基背接触无掺杂异质结太阳电池的叠层组合，充分利用了太阳光谱。底部背接触无掺杂异质结电极设置在底部，正面减少了阴影遮挡面积。使其背接触无掺杂异质结‑钙钛矿叠层太阳电池具有高的光电转换效率和高的开路电压，增加了发电量。本发明适用于太阳能电池。
Description
技术领域
本发明属于太阳能电池技术领域，具体涉及一种背接触无掺杂异质结-钙钛矿叠层太阳电池。
背景技术
随着传统化石能源的储量日益减少，人们开始研究新能源来替代传统化石能源，在新能源领域中，太阳能有着利用简单、安全、无污染等特点，成为科学研究单位的研究焦点。传统单结太阳电池采用单一的材料，例如晶硅太阳电池、非晶硅太阳电池、有机钙钛矿太阳电池、薄膜太阳电池。随着平价上网的政策的落实，科学研究单位开始研发了高效的太阳能电池，单结电池的效率已经达到了瓶颈，许多科研单位开始叠层太阳电池的研究。太阳能电池的理论转换效率取决于光电材料的禁带宽度，叠层电池的结构能将不同的禁带宽度的顶部电池和底部电池结合起来。
最近几年，钙钛矿电池引起了人们的强烈的关注，钙钛矿材料不但具备了无机半导体材料优良的导电性能和稳定性能，还具备了制备比较简单、成本比较低，钙钛矿材料的禁带宽度可以调节，能够充分利用可见光短波段范围380nm-500nm的光，在外量子效率(EQE)有明显的上升，弥补了硅基材料(禁带宽度1.12ev)对光谱利用不充分的缺点。
钙钛矿电池可以和晶硅PERC太阳电池、晶硅PERL太阳电池、晶硅PERT太阳电池、以及SHJ太阳电池和铜铟镓锡太阳电池的叠层组合，说明钙钛矿太阳电池具有很广的应用。
发明内容
本发明的目的在于克服现有技术中的不足之处，提供一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其采用顶部宽带隙1.5-2.5ev钙钛矿太阳电池和底部窄带隙1.12ev硅基背接触无掺杂异质结太阳电池的叠层组合，充分利用了太阳光谱。底部背接触无掺杂异质结电极设置在底部，正面减少了阴影遮挡面积。使其背接触无掺杂异质结-钙钛矿叠层太阳电池具有高的光电转换效率和高的开路电压，增加了发电量。
本发明采用的技术方案如下：
一种背接触无掺杂异质结-钙钛矿叠层太阳电池，包括从上到下依次设置的顶部电池和底部电池，顶部电池为钙钛矿太阳电池，钙钛矿太阳电池包括从上到下依次设置的透明导电氧化物层、空穴传输层、钙钛矿光吸收层、电子传输层，底部电池为背接触无掺杂异质结太阳电池，背接触无掺杂异质结太阳电池包括从上到下依次设置的与钙钛矿太阳电池连接的透明导电氧化物复合层、减反射层、n-型硅衬底层，n-型硅衬底层底部设置有p型空穴选择层、n型电子选择层，p型空穴选择层和n型电子选择层底部设置有金属电极层。
进一步的是技术方案是，所述钙钛矿太阳电池的透明导电氧化物层为氧化铟锡层，透明导电氧化物层的厚度为20-30nm，透明导电氧化物层在300-1100nm的太阳光下透过率在86％-92％。
进一步的是技术方案是，所述背接触无掺杂异质结太阳电池的透明导电氧化物复合层为氧化铟锡层，透明导电氧化物复合层的厚度为40-60nm，透明导电氧化物复合层在300-1100nm的太阳光下透过率在85％-90％，透明导电氧化物复合层的电阻率为3.0×10-4Ω·cm-4.0×10-4Ω·cm。
进一步的是技术方案是，所述背接触无掺杂异质结太阳电池的减反射层为氮化钽层，减反射层使底部的背接触无掺杂异质结太阳电池的反射率在13％之内且具有电导性，厚度为10-30nm。
进一步的是技术方案是，金属电极层为Cu或Cu与Mo、W、Ti、Ni、Al、Mg、Ta、Sn、Ag至少之一所形成的合金，或者金属电极层为Ag或Ag的合金，且背接触无掺杂异质结-钙钛矿叠层太阳电池的正负电极都设置在背接触无掺杂异质结-钙钛矿叠层太阳电池的背面。
进一步的是技术方案是，所述n-型硅衬底层为n型单晶硅衬底或n型多晶硅衬底，n-型硅衬底层的厚度为80-100um。
进一步的是技术方案是，所述钙钛矿太阳电池的电子传输层的材料的主要成分为SnO2，厚度为200-300nm。
进一步的是技术方案是，所述顶部钙钛矿太阳电池的带宽1.5-2.5ev钙钛矿光吸收层，钙钛矿光吸收层由钙钛矿I层和钙钛矿II层组成，总厚度为800-1000nm。
进一步的是技术方案是，所述顶部钙钛矿太阳电池的空穴传输层的材料为0.2-1.2mol/L的2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(spiro-MeOTAD)的溶液沉积到钙钛矿光吸层之上，旋涂均匀即可。
进一步的是技术方案是，所述背接触无掺杂异质结p型空穴选择层为过渡金属NiO(氧化镍)，其厚度为200-300nm。
进一步的是技术方案是，所述背接触无掺杂异质结n型电子选择层为碱金属氟化物LiF(氟化锂)，其厚度为200-300nm。
综上所述，由于采用了上述技术方案，本发明的有益效果是：
1、本发明中，采用了顶部宽带隙1.5-2.5ev钙钛矿太阳电池和底部窄带隙1.12ev硅基背接触无掺杂异质结太阳电池的叠层组合，充分利用了太阳光谱底部背接触无掺杂异质结电极设置在底部，正面减少了阴影遮挡面积。使其背接触无掺杂异质结-钙钛矿叠层太阳电池具有高的光电转化效率和高的开路电压，增加了发电量。通过顶部钙钛矿太阳电池的透明导电氧化物层为ITO(氧化铟锡)有高的光透过率，增加了光生载流子的产生，再连接顶部钙钛矿太阳电池的高电导率的透明导电氧化物复合层为ITO(氧化铟锡)的调控电流，使其背接触无掺杂异质结-钙钛矿叠层太阳电池具有稳定的电流输出。
附图说明
图1为本发明的结构示意图；
图中标记：1-透明导电氧化物层、2-空穴传输层、3-钙钛矿光吸收层、4-电子传输层、5-透明导电氧化物复合层、6-减反射层、7-n-型硅衬底层、8-p型空穴选择层、9-n型电子选择层、10-金属电极层。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
一种背接触无掺杂异质结-钙钛矿叠层太阳电池，包括从上到下依次设置的顶部电池和底部电池，顶部电池为钙钛矿太阳电池，钙钛矿太阳电池包括从上到下依次设置的透明导电氧化物层、空穴传输层、钙钛矿光吸收层、电子传输层，底部电池为背接触无掺杂异质结太阳电池，背接触无掺杂异质结太阳电池包括从上到下依次设置的与钙钛矿太阳电池连接的透明导电氧化物复合层、减反射层、n-型硅衬底层，n-型硅衬底层底部设置有p型空穴选择层、n型电子选择层，p型空穴选择层和n型电子选择层底部设置有金属电极层。
进一步的是技术方案是，所述钙钛矿太阳电池的透明导电氧化物层为氧化铟锡层，透明导电氧化物层的厚度为20-30nm，透明导电氧化物层在300-1100nm的太阳光下透过率在86％-92％。
进一步的是技术方案是，所述背接触无掺杂异质结太阳电池的透明导电氧化物复合层为氧化铟锡层，透明导电氧化物复合层的厚度为40-60nm，透明导电氧化物复合层在300-1100nm的太阳光下透过率在85％-90％，透明导电氧化物复合层的电阻率为3.0×10-4Ω·cm-4.0×10-4Ω·cm。
进一步的是技术方案是，所述背接触无掺杂异质结太阳电池的减反射层为氮化钽层，减反射层使底部的背接触无掺杂异质结太阳电池的反射率在13％之内且具有电导性，厚度为10-30nm。
进一步的是技术方案是，金属电极层为Cu或Cu与Mo、W、Ti、Ni、Al、Mg、Ta、Sn、Ag至少之一所形成的合金，或者金属电极层为Ag或Ag的合金，且背接触无掺杂异质结-钙钛矿叠层太阳电池的正负电极都设置在背接触无掺杂异质结-钙钛矿叠层太阳电池的背面。
进一步的是技术方案是，所述n-型硅衬底层为n型单晶硅衬底或n型多晶硅衬底，n-型硅衬底层的厚度为80-100um。
进一步的是技术方案是，所述钙钛矿太阳电池的电子传输层的材料的主要成分为SnO2，厚度为200-300nm。
进一步的是技术方案是，所述顶部钙钛矿太阳电池的带宽1.5-2.5ev钙钛矿光吸收层，钙钛矿光吸收层由钙钛矿I层和钙钛矿II层组成，总厚度为800-1000nm。
进一步的是技术方案是，所述顶部钙钛矿太阳电池的空穴传输层的材料为0.2-1.2mol/L的2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(spiro-MeOTAD)的溶液沉积到钙钛矿光吸层之上，旋涂均匀即可。
进一步的是技术方案是，所述背接触无掺杂异质结p型空穴选择层为过渡金属NiO(氧化镍)，其厚度为200-300nm。
进一步的是技术方案是，所述背接触无掺杂异质结n型电子选择层为碱金属氟化物LiF(氟化锂)，其厚度为200-300nm。
实施例1
如图1所示，
一种背接触无掺杂异质结-钙钛矿叠层太阳电池，包括从上到下依次设置的顶部电池和底部电池，顶部电池为钙钛矿太阳电池，钙钛矿太阳电池包括从上到下依次设置的透明导电氧化物层、空穴传输层、钙钛矿光吸收层、电子传输层，底部电池为背接触无掺杂异质结太阳电池，背接触无掺杂异质结太阳电池包括从上到下依次设置的与钙钛矿太阳电池连接的透明导电氧化物复合层、减反射层、n-型硅衬底层，n-型硅衬底层底部设置有p型空穴选择层、n型电子选择层，p型空穴选择层和n型电子选择层底部设置有金属电极层。
本实施例通过以下步骤制备而成：
(1)提供n型硅衬底-7制备背接触无掺杂异质结电池，对n型晶硅衬底进行清洗，表面进行抛光，使其平整有利于钙钛矿电池的旋涂，所述n型硅衬底-7的厚度为80-100um，所述n型晶硅掺杂的浓度为1016-1021/cm3；
(2)n型硅衬底-7的背接触无掺杂异质结电池进行上表面制备减反层-6、减反层-6为TaN(氮化钽)，选用磁控溅射氮化钽靶材制备，纯度规格99.5％，使底部的背接触无掺杂异质结太阳电池反射率在13％之内，具有电导性，厚度10-30nm。
(3)n型硅衬底-7的背接触无掺杂异质结电池进行下表面制备p型空穴选择层-8、p型空穴选择层-8为过渡金属氧化物NiO(氧化镍)，选用精确的掩膜版进行其他区域的遮挡，选用磁控溅射的高纯镍靶材制备，纯度规格99.999％，厚度为200-300nm；
(4)n型硅衬底-7的背接触无掺杂异质结电池进行下表面制备n型电子选择层-9、n型电子选择层-9为碱金属氟化物LiF(氟化锂)，选用精确的掩膜版进行p型空穴选择层区域的遮挡，使其p型空穴选择层和n型电子选择层间隔1-2um，选用磁控溅射的靶材制备，纯度规格99.99％，厚度为200-300nm；
(5)底部背接触无掺杂异质结电池减反层-6上，制备连接顶部钙钛矿太阳电池的透明导电氧化物复合层-5，连接顶部钙钛矿太阳电池的透明导电氧化物复合层-5为ITO(氧化铟锡)，选用电子束蒸发制备ITO(氧化铟锡)，基地温度为200℃，对底部背接触无掺杂异质结电池有一个退火作用，制备的ITO(氧化铟锡)厚度40-60nm，在300-1100nm的太阳光透过率在85％-90％，电阻率3.0×10-4Ω·cm-4.0×10-4Ω·cm。
(6)在连接顶部钙钛矿太阳电池的透明导电氧化物复合层-5，进行顶部钙钛矿电池的制备电子传输层-4，选用旋涂的方法，电子传输层的材料的主要成分为SnO2，厚度为200-300nm。
(7)将制备完电子传输层-4的SnO2的半成品电池，放入通入氧气的马弗炉，马弗炉的温度在300℃-500℃进行退火，退火20min。
(8)在顶部钙钛矿太阳电池的电子传输层-4，制备钙钛矿光吸收层-3，选用带宽1.5-2.5ev材料，采用旋涂的方法制备钙钛矿光吸收层-3，钙钛矿光吸收层由钙钛矿I层和钙钛矿II层组成，将含有钙钛矿AMX3的溶液旋涂至在空穴传输层上，在80℃烘干5min，形成I层，吸收带宽1.5ev；将含有钙钛矿AMX2Y1的溶液旋涂至在钙钛矿I层上，在100℃烘干8min，形成II层，吸收带宽2.5ev,总厚度为800-1000nm。
(9)在顶部钙钛矿太阳电池的钙钛矿光吸收层-3上制备空穴传输层-2，空穴传输层-2的材料为0.2-1.2mol/L的2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(spiro-MeOTAD)的溶液沉积到钙钛矿光吸层之上，旋涂均匀即可。
(10)在顶部钙钛矿太阳电池的空穴传输层-2，制备透明导电氧化物层-1，制备透明导电氧化物层-1为ITO(氧化铟锡)，选用电子束蒸发制备ITO(氧化铟锡)，基地温度基地温度为200℃，对钙钛矿太阳电池的空穴传输层-2、钙钛矿光吸收层-3、电子传输层-4，进行退火形成更加致密的薄膜，制备ITO(氧化铟锡)的厚度20-30nm，在300-1100nm的太阳光透过率在86％-92％。
(11)在背接触无掺杂异质结-钙钛矿叠层太阳电池下表面的p型空穴选择层-8和n型电子选择层-9下面进行金属电极的网版精确对位，选用网印刷工艺制备金属栅线电极层-10，电极的宽30-50um，高为20-30um，金属电极层-10包含Cu或Cu与Mo、W、Ti、Ni、Al、Mg、Ta、Sn、Ag至少之一所形成的合金，或者Ag或Ag的合金。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其特征在于，包括从上到下依次设置的顶部电池和底部电池，顶部电池为钙钛矿太阳电池，钙钛矿太阳电池包括从上到下依次设置的透明导电氧化物层(1)、空穴传输层(2)、钙钛矿光吸收层(3)、电子传输层(4)，底部电池为背接触无掺杂异质结太阳电池，背接触无掺杂异质结太阳电池包括从上到下依次设置的与钙钛矿太阳电池连接的透明导电氧化物复合层(5)、减反射层(6)、n-型硅衬底层(7)，n-型硅衬底层(7)底部设置有p型空穴选择层(8)、n型电子选择层(9)，p型空穴选择层(8)和n型电子选择层(9)底部设置有金属电极层(10)。
2.按照权利要求1所述的一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其特征在于，所述钙钛矿太阳电池的透明导电氧化物层(1)为氧化铟锡层，透明导电氧化物层(1)的厚度为20-30nm，透明导电氧化物层(1)在300-1100nm的太阳光下透过率在86％-92％。
3.按照权利要求1所述的一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其特征在于，所述背接触无掺杂异质结太阳电池的透明导电氧化物复合层(5)为氧化铟锡层，透明导电氧化物复合层(5)的厚度为40-60nm，透明导电氧化物复合层(5)在300-1100nm的太阳光下透过率在85％-90％，透明导电氧化物复合层(5)的电阻率为3.0×10-4Ω·cm-4.0×10-4Ω·cm。
4.按照权利要求1所述的一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其特征在于，所述背接触无掺杂异质结太阳电池的减反射层(6)为氮化钽层，减反射层(6)使底部的背接触无掺杂异质结太阳电池的反射率在13％之内且具有电导性，减反射层(6)的厚度10-30nm。
5.按照权利要求2或3所述的一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其特征在于，金属电极层(10)为Cu或Cu与Mo、W、Ti、Ni、Al、Mg、Ta、Sn、Ag至少之一所形成的合金，或者金属电极层(10)为Ag或Ag的合金，且背接触无掺杂异质结-钙钛矿叠层太阳电池的正负电极都设置在背接触无掺杂异质结-钙钛矿叠层太阳电池的背面。
6.按照权利要求1所述的一种背接触无掺杂异质结-钙钛矿叠层太阳电池，其特征在于，所述n-型硅衬底层(7)为n型单晶硅衬底或n型多晶硅衬底，n-型硅衬底层(7)的厚度为80-100um。
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