CN110491951A - A kind of double-level-metal Meta Materials improving thin-film solar cells transformation efficiency - Google Patents
A kind of double-level-metal Meta Materials improving thin-film solar cells transformation efficiency Download PDFInfo
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- CN110491951A CN110491951A CN201910623919.9A CN201910623919A CN110491951A CN 110491951 A CN110491951 A CN 110491951A CN 201910623919 A CN201910623919 A CN 201910623919A CN 110491951 A CN110491951 A CN 110491951A
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- film solar
- solar cells
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- 239000000463 material Substances 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 21
- 239000002184 metal Substances 0.000 title claims abstract description 21
- 230000009466 transformation Effects 0.000 title claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 238000010276 construction Methods 0.000 claims abstract description 8
- 239000007769 metal material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000001413 cellular effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency, belongs to area of solar cell.It is characterized in that the metal Meta Materials of the structure are covered on the upper and lower surfaces of solar cell semiconductor absorbed layer simultaneously, interfacial contact is formed with semiconductor material respectively.Size, shape by adjusting metal metamaterial modular construction, generate forceful electric power magnetic resonance in semiconductor absorption layer, and enhanced film battery obsorbing layer achievees the purpose that improve thin-film solar cells transformation efficiency to the absorption of incident light, the light transmission of reduction exit facet.The size of the cellular construction is between 1 micron to 0.01 micron.
Description
Technical field
The present invention relates to a kind of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency, belong to solar-electricity
Pond field.
Background technique
Universal solar battery is the desirable route for solving future source of energy crises problem.The absorbed layer of thin-film solar cells
Thickness is only a few micrometers or even hundreds of nanometers, saves the usage amount for absorbing layer material, can effectively reduce cost.However, ought be too
After positive energy battery thin membranization, absorbed layer substantially reduces the absorption efficiency of long-wave band light wave, seriously limits its photoelectric efficiency
It improves.
Summary of the invention
The invention discloses a kind of metal metamaterial structures that can produce forceful electric power magnetic resonance in long-wave band, are covered on simultaneously
The upper and lower surfaces of thin-film solar cells semiconductor absorption layer form interfacial contact with semiconductor material respectively.It is based on
Surface phasmon is theoretical and Meta Materials electromagnetic property can artificial adjustment unique advantage, by adjusting metal Meta Materials list
Size, the shape of meta structure generate forceful electric power magnetic resonance in semiconductor absorption layer.Effect is focused using the field enhancing of Meta Materials and light
It answers, enhanced film battery obsorbing layer reaches raising thin-film solar cells to the absorption of incident light, the light transmission of reduction exit facet
The purpose of transformation efficiency.It is calculated by electromagnetic simulation software, the size of the cellular construction is between 1 micron to 0.01 micron.
The symmetrical metal Meta Materials of two-dimensional and periodic of semiconductor absorption layer upper surface are placed in, grating effect is played.Pass through
Grating diffration interference can effectively reduce the light reflection of film surface, increase effective incident field.It can allow more
Light enters in absorbed layer, reduces light in the first reflection of battery incidence surface, improves the photonic absorption of thin film solar cell,
Improve the absorption efficiency of thin-film solar cells.
The symmetrical metal Meta Materials of two-dimensional and periodic of semiconductor absorption layer lower surface are placed in, sunken luminous effect is played.For
The photon not being fully absorbed can be limited in absorbed layer by the relatively thin thin-film solar cells of absorbed layer, the structure, be reduced
The light transmission of exit facet.
There is metal fine connection between the cellular construction of metal Meta Materials.Therefore, metal Meta Materials can be used directly
Make the electrode of thin-film solar cells.
Double-level-metal Meta Materials combine, and complement each other, which can be improved the transformation efficiency of solar battery.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency.
Fig. 2 is the structural schematic diagram of the double silver Meta Materials of CdTe/CdS thin-film solar cells implantation trapezoid cross section.
Specific embodiment
The present embodiment in CdTe/CdS thin-film solar cells for being implanted into the double silver Meta Materials of trapezoid cross section.
In the present embodiment, the material selection metallic silver of metamaterial structure.The section of metamaterial modular construction is trapezoidal.It is single
The upper bottom length of meta structure is 0.3 micron, and upper bottom width is 0.3 micron, and bottom length is 0.2 micron, and bottom width is 0.2 micro-
Rice, is highly 0.3 micron.There is the connection of metal silver wire between cellular construction, silver wire width is 0.03 micron.With CdTe/CdS film
Solar battery is object, is covered each by the Meta Materials of this structure in the upper and lower surfaces of absorbed layer.CdTe/CdS thin film solar
Battery be implanted into trapezoid cross section double silver Meta Materials structural schematic diagram as shown in Fig. 2, wherein (a) be side view, (b) for overlook
Figure.
Claims (4)
1. a kind of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency, it is characterised in that constitute super material with metal
Material, is covered on the absorbed layer of thin-film solar cells, for improving the absorption efficiency of thin-film solar cells.
2. a kind of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency as described in claim 1, feature
It is that the structure includes the double-deck Meta Materials, is respectively overlay in the upper and lower surfaces of absorbing layer of thin film solar cell.
3. a kind of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency as described in claim 1, feature
It is the size of the length of metamaterial modular construction, width and thickness between 1 micron to 0.01 micron.
4. a kind of double-level-metal Meta Materials for improving thin-film solar cells transformation efficiency as described in claim 1, feature
It is there is metal wire connection between metamaterial modular construction, the electrode of solar battery can be directly used as.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910623919.9A CN110491951A (en) | 2019-07-04 | 2019-07-04 | A kind of double-level-metal Meta Materials improving thin-film solar cells transformation efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910623919.9A CN110491951A (en) | 2019-07-04 | 2019-07-04 | A kind of double-level-metal Meta Materials improving thin-film solar cells transformation efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110491951A true CN110491951A (en) | 2019-11-22 |
Family
ID=68545968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910623919.9A Pending CN110491951A (en) | 2019-07-04 | 2019-07-04 | A kind of double-level-metal Meta Materials improving thin-film solar cells transformation efficiency |
Country Status (1)
| Country | Link |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606628A (en) * | 2013-11-22 | 2014-02-26 | 哈尔滨工业大学深圳研究生院 | Novel thin-film solar cell by means of metamaterials |
| CN103811580A (en) * | 2014-03-05 | 2014-05-21 | 中国科学院半导体研究所 | InGaAs infrared photodetector |
| CN104733554A (en) * | 2015-04-10 | 2015-06-24 | 上海电机学院 | Silicon based thin film solar cell with bottom provided with metal nanoparticle structure |
| CN205881917U (en) * | 2016-05-16 | 2017-01-11 | 桂林电子科技大学 | A photonic crystal light tripping structure for thin -film solar cell |
| CN106711271A (en) * | 2017-02-03 | 2017-05-24 | 江西师范大学 | Three-frequency band near-infrared absorber based on a semiconductor super-surface structure |
| KR20180036002A (en) * | 2016-09-30 | 2018-04-09 | 포항공과대학교 산학협력단 | Vertical Nano-structured Photodetector and Method of Forming the same |
-
2019
- 2019-07-04 CN CN201910623919.9A patent/CN110491951A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606628A (en) * | 2013-11-22 | 2014-02-26 | 哈尔滨工业大学深圳研究生院 | Novel thin-film solar cell by means of metamaterials |
| CN103811580A (en) * | 2014-03-05 | 2014-05-21 | 中国科学院半导体研究所 | InGaAs infrared photodetector |
| CN104733554A (en) * | 2015-04-10 | 2015-06-24 | 上海电机学院 | Silicon based thin film solar cell with bottom provided with metal nanoparticle structure |
| CN205881917U (en) * | 2016-05-16 | 2017-01-11 | 桂林电子科技大学 | A photonic crystal light tripping structure for thin -film solar cell |
| KR20180036002A (en) * | 2016-09-30 | 2018-04-09 | 포항공과대학교 산학협력단 | Vertical Nano-structured Photodetector and Method of Forming the same |
| CN106711271A (en) * | 2017-02-03 | 2017-05-24 | 江西师范大学 | Three-frequency band near-infrared absorber based on a semiconductor super-surface structure |
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Application publication date: 20191122 |