CN110484938A - A kind of processing method of the interaction circuit components resistant to high temperature of vacuum device - Google Patents
A kind of processing method of the interaction circuit components resistant to high temperature of vacuum device Download PDFInfo
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- CN110484938A CN110484938A CN201910880131.6A CN201910880131A CN110484938A CN 110484938 A CN110484938 A CN 110484938A CN 201910880131 A CN201910880131 A CN 201910880131A CN 110484938 A CN110484938 A CN 110484938A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
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Abstract
The invention discloses a kind of processing method of the components resistant to high temperature of vacuum device, include the following steps: to coat photoresist in oxygen-free copper substrate, through exposure and development, obtains the oxygen-free copper substrate with photoetching offset plate figure；One layer of copper of micro- electroforming in the oxygen-free copper substrate with photoetching offset plate figure, wherein the condition of micro- electroforming includes: content of copper ion 18-25g/L in the electroforming solution of micro- electroforming, sulfuric acid content 170-220g/L, chloride ion content 50-70mg/L；The photoresist in the structure obtained after micro- electroforming is removed, the components resistant to high temperature of the vacuum device are obtained.The problem of this method solve the Terahertz components of incompetent processing micron magnitude in the prior art.And the components of this method processing can carry out high-temperature soldering with other components, expand the range that the method is applied in Terahertz vacuum electron device.
Description
Technical field
The present invention relates to vacuum electron device fields.More particularly, to a kind of interaction resistant to high temperature of vacuum device
With the processing method of circuit components.
Background technique
Terahertz vacuum device has many advantages, such as that power is big, bandwidth, in radar, guidance, tactics and strategic communicaton, electronics
Confrontation, remote sensing, actinometry etc. are widely applied.With the increase of frequency, the components of Terahertz vacuum device
Size has reached tens micron dimensions, while in order to reduce transmission loss, it is desirable that structure surface roughness arrives several hundred tens
Nanometer scale, this brings the interaction of the electronics and electromagnetic field that use in various difficulties, especially Terahertz travelling-wave tubes to development
The processing and manufacturing of circuit, attenuator and delivery of energy coupled system is even more so.The interaction circuit of electronics and electromagnetic field is Terahertz
One of important component of travelling-wave tubes.In order to enable travelling-wave tubes steady operation, and good unit for electrical property parameters is provided, it is good to dissipate
Heat, interaction circuit must be full steel structures, and energy high temperature resistant, resistance to electron bombardment, dimensional accuracy is high, and surface smoothness is high, transmission
Small loss and other features, but also should have enough structural strengths and vacuum sealing performance.
For Terahertz travelling-wave tubes, the interaction circuit of electronics and electromagnetic wave generally uses folded waveguide form, folding
Folded waveguiding structure is as shown in Figure 1.Table 1 provides the typical ruler of frequency folded waveguide structure under different frequency from 94GHz to 560GHz
It is very little.Traditional precision machining method is no longer satisfied requirement, and this requires use new processing technology to guarantee very high ruler
Very little precision and surface smoothness.New processing technology based on MEMS processing technology is introduced for processing the folding wave of above-mentioned frequency range
Guide structure.Compared with MEMS device, the folded waveguide structure of vacuum has following feature: depth-to-width ratio is little, generally can only
To 5 or so, but the size of absolute depth (such as half of folded waveguide broadside size) is bigger, can achieve 950 in W-waveband
Micron, 560GHz can achieve 150 microns；Folded waveguide structure will have good heat dissipation, and fold wave in high-temperature soldering
Guide structure does not generate deformation.
The typical sizes of interaction circuit in 1 different frequency travelling-wave tubes of table
| Frequency (GHz) | Broadside size (μm) | Narrow side size (μm) |
| 94 | 1900 | 300 |
| 140 | 1350 | 240 |
| 220 | 760 | 160 |
| 340 | 500 | 100 |
| 560 | 300 | 40 |
Summary of the invention
Based on the above fact, it is an object of the present invention to provide a kind of components resistant to high temperature of vacuum device
Processing method, to solve to be difficult to obtain the good Terahertz frequency range vacuum electron device components of heat-resisting quantity in the prior art
Technical problem.
In order to achieve the above objectives, the present invention adopts the following technical solutions:
A kind of processing method of the components resistant to high temperature of vacuum device, includes the following steps:
Photoresist is coated in oxygen-free copper substrate, through exposure and development, obtains the oxygen-free copper substrate with photoetching offset plate figure；
One layer of copper of micro- electroforming in the oxygen-free copper substrate with photoetching offset plate figure, wherein the condition of micro- electroforming includes:
In the electroforming solution of micro- electroforming, content of copper ion 18-25g/L, sulfuric acid content 170-220g/L, chloride ion content 50-
70mg/L；
The photoresist in the structure obtained after micro- electroforming is removed, the components resistant to high temperature of the vacuum device are obtained.
It, can also be according to practical need after the photoresist in the structure obtained after removing micro- electroforming in above-mentioned processing method
It wants, chooses whether cutting profile, to obtain the components resistant to high temperature of required vacuum device.
In processing method of the invention, the concentration of each ion is to aforementioned in the electroforming solution (sulfate cast copper solution) of micro- electroforming
Influential effect is obvious, and under the conditions of the electroforming, the arrangement of obtained electroformed layer crystal grain is close, and crystal grain is tiny, can reach 194nm with
Under.By using the method that photoetching combines micro- electroforming, and further combined with above-mentioned specific micro- electroforming condition, so that electroforming
Layer is tightly combined with basal layer, and obtained structure heat-resisting quantity and resistance to electron bombardment effect is good, the components being prepared
High temperature resistant, high-temperature operation is indeformable, and oxygen content is low, and resistance to electron bombardment effect is good, can be used for Terahertz frequency range vacuum electric well
In sub- device.
Further, in the electroforming solution of micro- electroforming, content of copper ion 19-24g/L, sulfuric acid content 180-
210g/L, chloride ion content 50-70mg/L.
Further, the temperature of micro- electroforming is 20-40 DEG C, anodic current density 0.5-1.5A/dm2。
Further, the frequency of micro- electroforming is 500Hz-5KHz, it is highly preferred that the frequency of micro- electroforming is
1KHz-2KHz.Using the lesser specific electroforming frequency, in conjunction with electroforming solution condition, so that obtained electroformed layer crystal grain
Arrangement is close, and crystal grain is more tiny.
Further, the anaerobic copper substrate surfaces roughness Ra is 2nm-50nm.Wherein, it can be controlled by grinding and polishing
The surface roughness of oxygen-free copper substrate processed.
For the ease of processing, the shape of oxygen-free copper substrate can be cylinder, and with a thickness of 5-10mm, diameter is 3 inches or 4 English
It is very little.
Further, the photoresist can be AZ series, the photoresist of SU8 series.It is appreciated that when photoresist is positive light
When photoresist, the photoetching agent pattern obtained afterwards through exposure and development is identical as the shape of mask plate；When photoresist is negative photoresist,
The photoetching agent pattern obtained afterwards through exposure and development is complementary with the shape of mask plate.
Further, before the exposure, further include the steps that front baking, the temperature of the front baking are 95-130 DEG C, the time
It is 0-20 hours.
Further, it after the exposure, before development, is dried after further including the steps that, the temperature dried after described is 50-95
DEG C, the time is 0.5-4 hours.
It by photoetching, is developed in oxygen-free copper substrate and forms photoetching offset plate figure, so as to preferably guarantee subsequent micro- electricity
The quality of casting.
Further, during micro- electroforming, the thickness of the layers of copper in electroforming and the thickness of photoetching offset plate figure are identical.Lead to again
Grinding and polishing is crossed, obtains the thickness of layers of copper actually required, while controllable layers of copper surface roughness Ra is 2nm-50nm.
Further, the photoresist coated in oxygen-free copper substrate with a thickness of 0-1000 μm, preferably 0.1-1000 μm.
Further, the components are the circuit of electronics and electromagnetic field interaction.Illustratively electronics and electromagnetic field are mutual
The circuit of effect is folded waveguide.
Beneficial effects of the present invention are as follows:
Processing method of the invention can be with copper material components of the processing dimension between 0-1000 μm, zero processed
Component energy high temperature resistant, resistance to electron bombardment, dimensional accuracy is high, and surface smoothness is high, and transmission loss is small, but also has enough knots
Structure intensity and vacuum sealing performance can be used for well in the vacuum device of Terahertz frequency range, meet Terahertz traveling wave tube device
Application demand, solve the problems, such as the Terahertz components of incompetent processing micron magnitude in the prior art.And this method is processed
Components can with other components carry out high-temperature soldering, expand what the method was applied in Terahertz vacuum electron device
Range.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 shows the structural schematic diagram of Terahertz folded waveguide.
The structural schematic diagram of the folded waveguide for the Terahertz vacuum device being prepared Fig. 2 shows the embodiment of the present invention 1.
Fig. 3 shows the sample applied after a layer photoresist in oxygen-free copper substrate.
Fig. 4 shows the photoetching offset plate figure formed in oxygen-free copper substrate after photoetching process.
Fig. 5 shows the sample formed after micro- electroforming, grinding and polishing.
Fig. 6 shows the sample formed after ground polishing.
Fig. 7 shows the electromicroscopic photograph of electroforming layers of copper, grain size 194nm.
Fig. 8 shows the microscope photograph for the interaction circuit that 1 frequency of embodiment is 94GHz travelling-wave tubes.
Fig. 9 shows the test data of embodiment 194GHz travelling-wave tubes output power, and output power is greater than 100W.
Figure 10 shows the microscope figure (a) and scanning electron microscope for the interaction circuit that 2 frequency of embodiment is 340GHz travelling-wave tubes
Scheme (b).
Figure 11 shows the Transmission loss for the interaction circuit that 2 frequency of embodiment is 340GHz travelling-wave tubes.
Figure 12 shows the microscope figure (a) and scanning electron microscope (SEM) photograph (b) of 3 second harmonic traveling-wave tube interaction circuit of embodiment.
Figure 13 shows the test result of second harmonic travelling-wave tubes, output power 100mW
Figure 14 shows the electromicroscopic photograph of the electroforming layers of copper of comparative example 1, and after high-temperature soldering, deformation occurs for high-frequency structure.
Figure 15 shows the electromicroscopic photograph of the electroforming layers of copper of comparative example 2, and there are many cavities for copper electroforming.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
Embodiment 1
A kind of processing method of the folded waveguide of Terahertz vacuum device (its structural schematic diagram is as shown in Figure 2), including
Following steps:
A. oxygen-free copper 1 is polished directly, anaerobic copper sheet surface roughness Ra is between 2nm-50nm；
B. one layer of SU8 photoresist 2 is coated on 1 surface of oxygen-free copper, photoresist is with a thickness of 1000 μm, as shown in Figure 3；
C. front baking is carried out to photoresist 3, exposure is rear to dry, development, forms photoetching offset plate figure 3-1 in 1 on piece of oxygen-free copper, such as
Shown in Fig. 4, wherein 105 DEG C of pre-bake temperature, the front baking time is 18 hours, and rear temperature of drying is 95 DEG C, and drying the time afterwards is 1 hour；
D. in 1 on piece of oxygen-free copper, the one layer of copper 2-1 of micro- electroforming for having figure 3-1, as shown in figure 5, using sulfate cast copper
Solution carries out electroforming, copper ion content of solution 20g/l, sulfuric acid content 200g/l, chloride ion content 60mg/l, temperature
It is 25 DEG C, anodic current density 0.8A/dm2, electroforming is carried out using impulse waveform, electroforming frequency is 1KHz；Micro- electroforming layers of copper
With a thickness of 1000 μm,；
E. the copper 2-1 layer surface of micro- electroforming is polished directly to the height 2 of device, surface roughness Ra 2nm~
Between 50nm, as shown in Figure 6；
F. the photoresist in micro- electroforming layers of copper is removed using fair current chemical method；
G. cutting profile, the components of vacuum electron device required for being formed.
The arrangement of gained components electroformed layer crystal grain is close, and crystal grain is tiny, can reach 194nm, as shown in fig. 7, resistance to 850 DEG C of height
Temperature welding, resistance to electron bombardment, oxygen content 0.00035%.
Implement resulting components as shown in figure 8, the components are for measuring output work in the travelling-wave tubes of 94GHz frequency range
Rate is as shown in figure 9, output power is greater than 100W.
Embodiment 2
A kind of processing method of the folded waveguide of Terahertz vacuum device, includes the following steps:
A. anaerobic copper sheet is polished directly, anaerobic copper sheet surface roughness Ra is between 2nm-50nm；
B. one layer of SU8 photoresist is coated on oxygen-free copper surface, photoresist is with a thickness of 400 μm；
C. front baking is carried out to photoresist, exposure is rear to dry, development, forms photoetching offset plate figure, pre-bake temperature in oxygen-free copper on piece
105 DEG C, the front baking time is 6 hours, and rear temperature of drying is 95 DEG C, and drying the time afterwards is 0.5 hour；
D. in the oxygen-free copper on piece one layer of copper of micro- electroforming for having figure, electroforming, solution are carried out using sulfate cast copper solution
Middle content of copper ion is 20g/l, sulfuric acid content 200g/l, chloride ion content 60mg/l, and temperature is 25 DEG C, and anode current is close
Degree is 0.8A/dm2, electroforming is carried out using impulse waveform, electroforming frequency is 1.5KHz；Micro- electroforming copper layer thickness is 400 μm；
E. the layers of copper surface of micro- electroforming is polished directly to the height of device, surface roughness Ra is in 2nm~50nm
Between；
F. the photoresist in micro- electroforming layers of copper is removed using chemical downstream method；
G. cutting profile, the components of vacuum electron device required for being formed.
The arrangement of gained components electroformed layer crystal grain is close, and crystal grain is tiny, can reach 194nm, and resistance to 850 DEG C of high-temperature solderings are resistance to
Electron bombardment, oxygen content 0.00035%.
For the microscope photograph and scanning electron microscope (SEM) photograph for implementing resulting components as shown in a and b in Figure 10, the components are available
In the travelling-wave tubes of 340GHz frequency range, output power is measured greater than 100W.Figure 11 is in frequency range 336-346GHz, transmission loss system
Number: 4-5.3dB/cm.
Embodiment 3
A kind of processing method of the folded waveguide of Terahertz vacuum device, includes the following steps:
A. anaerobic copper sheet is polished directly, anaerobic copper sheet surface roughness Ra is between 2nm-50nm；
B. one layer of SU8 photoresist is coated on oxygen-free copper surface, photoresist is with a thickness of 600 μm；
C. front baking is carried out to photoresist, exposure is rear to dry, development, forms photoetching offset plate figure, pre-bake temperature in oxygen-free copper on piece
105 DEG C, the front baking time is 8 hours, and rear temperature of drying is 95 DEG C, and drying the time afterwards is 45 minutes；
D. in the oxygen-free copper on piece one layer of copper of micro- electroforming for having figure, electroforming, solution are carried out using sulfate cast copper solution
Middle content of copper ion is 20g/l, sulfuric acid content 200g/l, chloride ion content 60mg/l, and temperature is 25 DEG C, and anode current is close
Degree is 0.8A/dm2, electroforming is carried out using impulse waveform, electroforming frequency is 2KHz；Micro- electroforming copper layer thickness is 600 μm；
E. the layers of copper surface of micro- electroforming is polished directly to the height of device, surface roughness Ra 2nm-50nm it
Between；
F. the photoresist in micro- electroforming layers of copper is removed using chemical downstream method；
G. cutting profile, the components of vacuum electron device required for being formed.
The arrangement of gained components electroformed layer crystal grain is close, and crystal grain is tiny, can reach 194nm, and resistance to 850 DEG C of high-temperature solderings are resistance to
Electron bombardment, oxygen content 0.00035%.
It is as shown in figure 12 to implement resulting components, which has been used for measuring output work in second harmonic travelling-wave tubes
Rate is as shown in figure 13, output power 100mW.
Comparative example 1
A kind of processing method of the folded waveguide of Terahertz vacuum device, includes the following steps:
A. anaerobic copper sheet is polished directly, anaerobic copper sheet surface roughness Ra is between 2nm-50nm；
B. one layer of SU8 photoresist is coated on oxygen-free copper surface, photoresist is with a thickness of 1000 μm；
C. front baking is carried out to photoresist, exposure is rear to dry, development, forms photoetching offset plate figure, pre-bake temperature in oxygen-free copper on piece
105 DEG C, the front baking time is 18 hours, and rear temperature of drying is 95 DEG C, and drying the time afterwards is 1 hour；
D. in the oxygen-free copper on piece one layer of copper of micro- electroforming for having figure, electroforming, solution are carried out using sulfate cast copper solution
Middle content of copper ion is 40g/l, sulfuric acid content 200g/l, chloride ion content 52mg/l, and temperature is 25 DEG C, and anode current is close
Degree is 0.8A/dm2, electroforming is carried out using impulse waveform, electroforming frequency is 2KHz；Micro- electroforming copper layer thickness is 600 μm；；
E. the layers of copper surface of micro- electroforming is polished directly to the height of device, surface roughness Ra is in 2nm~50nm
Between；
F. the photoresist in micro- electroforming layers of copper is removed using fair current chemical method；
G. cutting profile, the components of vacuum electron device required for being formed.
The stress of gained components electroformed layer is big, and when high-temperature soldering, deformation occurs for components, interaction circuit after deformation
Electromicroscopic photograph is as shown in figure 14, which can not be applied in vacuum THz devices.
Comparative example 2
A kind of processing method of the folded waveguide of Terahertz vacuum device, includes the following steps:
A. anaerobic copper sheet is polished directly, anaerobic copper sheet surface roughness Ra is between 2nm-50nm；
B. one layer of SU8 photoresist is coated on oxygen-free copper surface, photoresist is with a thickness of 1000 μm；
C. front baking is carried out to photoresist, exposure is rear to dry, development, forms photoetching offset plate figure, pre-bake temperature in oxygen-free copper on piece
105 DEG C, the front baking time is 18 hours, and rear temperature of drying is 95 DEG C, and drying the time afterwards is 1 hour；
D. in the oxygen-free copper on piece one layer of copper of micro- electroforming for having figure, electroforming, solution are carried out using sulfate cast copper solution
Middle content of copper ion is 40g/l, sulfuric acid content 200g/l, chloride ion content 40mg/l, and temperature is 25 DEG C, and anode current is close
Degree is 0.8A/dm2, electroforming is carried out using impulse waveform, electroforming frequency is 2KHz；Micro- electroforming copper layer thickness is 600 μm；；
E. the layers of copper surface of micro- electroforming is polished directly to the height of device, surface roughness Ra is in 2nm~50nm
Between；
F. the photoresist in micro- electroforming layers of copper is removed using fair current chemical method；
G. cutting profile, the components of vacuum electron device required for being formed.
Electromicroscopic photograph with scanning electron microscopic observation component surface, surface is as shown in figure 15, it can be seen from fig. 15 that gained
The arrangement of components electroformed layer crystal grain is loose, and there is a cavity in centre, when electron bombardment, discharges gas, makes the true of vacuum THz devices
Reciprocal of duty cycle sharply increases, and device performance is impaired.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (9)
1. a kind of processing method of the components resistant to high temperature of vacuum device, which comprises the steps of:
Photoresist is coated in oxygen-free copper substrate, through exposure and development, obtains the oxygen-free copper substrate with photoetching offset plate figure；
One layer of copper of micro- electroforming in the oxygen-free copper substrate with photoetching offset plate figure, wherein the condition of micro- electroforming includes: micro- electricity
In the electroforming solution of casting, content of copper ion 18-25g/L, sulfuric acid content 170-220g/L, chloride ion content 50-70mg/L；
The photoresist in the structure obtained after micro- electroforming is removed, the components resistant to high temperature of the vacuum device are obtained.
2. processing method according to claim 1, which is characterized in that the temperature of micro- electroforming is 20-40 DEG C, anode electricity
Current density 0.5-1.5A/dm2。
3. processing method according to claim 1, which is characterized in that the frequency of micro- electroforming is 500Hz-5KHz.
4. processing method according to claim 1, which is characterized in that the anaerobic copper substrate surfaces roughness Ra is 2nm-
50nm。
5. processing method according to claim 1, which is characterized in that before the exposure, further include the steps that front baking, institute
The temperature for stating front baking is 95-130 DEG C, and the time is 0-20 hours；Preferably, it after the exposure, before development, is dried after further including
Step, the temperature dried after described are 50-95 DEG C, and the time is 0.5-4 hours.
6. processing method according to claim 1, which is characterized in that the photoetching in structure obtained after removing micro- electroforming
Before the step of glue, further include the steps that being polished directly the layers of copper surface of micro- electroforming；Preferably, after ground polishing, institute
Stating layers of copper surface roughness Ra is 2nm-50nm.
7. processing method according to claim 1, which is characterized in that the thickness of the photoresist coated in oxygen-free copper substrate
It is 0-1000 μm, preferably 0.1-1000 μm.
8. processing method according to claim 1, which is characterized in that the components are electronics and electromagnetic field interaction
Circuit；Preferably, the electronics and the circuit of electromagnetic field interaction are folded waveguide.
9. processing method according to claim 1, which is characterized in that the oxygen-free copper substrate is cylinder, with a thickness of 5-
10mm, diameter are 3 inches or 4 inches.
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| CN111146051A (en) * | 2020-01-02 | 2020-05-12 | 上海航天电子通讯设备研究所 | Electronic beam hole forming device and method for terahertz-level folded waveguide traveling-wave tube |
| CN114250493A (en) * | 2021-12-21 | 2022-03-29 | 广西科技大学 | Method for processing high-temperature-resistant and smooth-side-wall-surface parts for vacuum devices |
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