CN1104826A - Infrared sensor with 10.6 um green light output - Google Patents

Infrared sensor with 10.6 um green light output Download PDF

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Publication number
CN1104826A
CN1104826A CN 94112052 CN94112052A CN1104826A CN 1104826 A CN1104826 A CN 1104826A CN 94112052 CN94112052 CN 94112052 CN 94112052 A CN94112052 A CN 94112052A CN 1104826 A CN1104826 A CN 1104826A
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China
Prior art keywords
infrared
ceramic chip
infrared sensor
green light
light
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CN 94112052
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Chinese (zh)
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CN1052371C (en
Inventor
陈述春
邱佩华
戴凤妹
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Priority to CN94112052A priority Critical patent/CN1052371C/en
Publication of CN1104826A publication Critical patent/CN1104826A/en
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Publication of CN1052371C publication Critical patent/CN1052371C/en
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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The infrared sensor is a thermoluminescent pottery-quality chip for transforming 10.6 micrometers infrared light from CO2 laser into visual green light. It is made up by baking multi-element compound and contains such chemical components as rare-earth sulfide doped with Ce ions and Dy, Ho, Er, or Tm ions, fluorinated alkali and alkali-earth fluoride. The sensor features good high temp. resistance and mechanical strength, visual observation and high sensitivity, and is used in photography and record.

Description

Infrared sensor with 10.6 um green light output
The present invention is a kind of infrared sensor with the thermoluminescence material, and it is to be used for CO 2Laser converts the sensing element of green visible light in the infrared output of 10.6 μ m.
The II a-VI b compounds of group that mixes has good photoluminescence property.Has darker trap in these materials, trapped electron that can be stable, and just think just can cause luminescence generated by light with near infrared light (λ ∠ 1.7 μ m), this phenomenon and relevant material be used to make infrared sensing element to the near infrared light response [see U.S. Pat 4806772(HO5B33/00), US4812659(HO5B33/00), US4812660(HO5B33/00)].
But the alkaline earth sulfide of some doping and selenides have thermoluninescent characteristic, yet in the ordinary course of things, its application is out in the cold.Under special process conditions and chemical composition, autotelicly in material, change composition and mix the trap that special impurity is introduced some appropriate depth, can make it under the effect of LONG WAVE INFRARED light and heat, to produce visible electronics-hole recombination luminescence.Like this, this visible light just becomes the demonstration that acts on the infrared light on the material.Utilize this thermo-sensitive material to make and be fit to many-sided infrared sensing element of using, for example be used to detect CO 2The range estimation element that laser is exported at 10.6 μ m, the infrared display screen of seeing spectrometer, the picture conversion screen of infrared interferometer etc.
Should not have good heat endurance with our this element of invention with light-sensitive element, it can not or use organic bond with the organic material plastic packaging.
Main purpose of the present invention provide a kind of can be with CO 2Laser converts the heat-resisting high temperature resistant infrared sensing element of blue green visible light in the infrared output of 10.6 μ m; And this element is provided and constitutes the chemical composition and the preparation method of the material of this element.
LONG WAVE INFRARED senser of the present invention is fired by special material and to be formed.This material is the ceramic chip (piece, powder) that is made of multi-element compounds.Its matrix components is an alkaline earth sulfide, and main component is special impurity, the characteristics of luminescence of its decision material, and other additive (alkaline-earth sulfate, alkali halide, alkali-earth halide etc.) of formation potsherd.Main matrix composition alkaline earth sulfide before not adding other composition, does not possess any available characteristic.Mix cerium into and obtained the characteristic of luminescence generated by light, and the characteristic of mixing the luminescence generated by light that has changed cerium of second kind of impurity (erbium, holmium, dysprosium and thulium), and strengthened the thermoluminescence characteristic.
Infrared sensor of the present invention is the energy transmitting green light under the effect of infrared laser, and behind the long duration of action, green glow weakens and leaves a trace at this point, and this vestige can recover in 1 second naturally.
Infrared sensor of the present invention is resistant to elevated temperatures, and it is made of the ceramic chip of difformity that is fired into and different size.This ceramic chip at high temperature sinters into after under high pressure raw material being shaped.This ceramic chip has certain intensity can be contained on the special framework, or on the sintered metal sheet or on other potsherd.
Infrared sensor of the present invention is also to the near-infrared radiation sensitivity.
The main component of the ceramic chip material therefor of element of the present invention is an alkaline earth sulfide, wherein is mixed with two kinds of rare earth ions, and a kind of is cerium, another kind can be a dysprosium, holmium, thulium or erbium etc., add an amount of alkali fluoride simultaneously, alkaline earth fluoride etc. increase luminous intensity and form ceramic.Rare earth ion can be an oxide, or sulfide or the adding of halid form.Its relative weight percentage is as follows:
SrS 100 wt%
M(Ca,Sr,Ba)SO 40-6 wt%
M(Ca,Sr,Ba)F 20-8 wt%
M(Li,Na,K)F 2-12 wt%
Ce 0.02-0.12 wt%
R(Er,Ho,Dy,Tm) 0.005-0.05 wt%
The preparation method of infrared sensing element of the present invention:
The compound of above-mentioned ceramic chip is weighed up mixing by required ratio, grind back press molding in the substrate of various sizes and shape, be placed on afterwards in the electric furnace, under inert atmosphere, heat, burnt 0.5-2 hour in 1000-1250 ℃ of temperature, promptly get element of the present invention after the cooling.
Said substrate is a mould, or metal or alumina ceramic plate.
The above-mentioned element that makes can be contained on the suitable framework so that use according to different needs.
Advantage of the present invention:
Element of the present invention is made by inorganic ceramic material, is characterized in LONG WAVE INFRARED light (CO 2Laser output-10.6 μ m) convert blue green visible light to, its spectral distribution is as shown in drawings, and is approaching with the spectrum sensitivity district of human eye, thereby it has following advantage:
1. suitable visualization, highly sensitive;
2. be beneficial to and take a picture and photoelectric recording;
3. good heat resistance;
4. mechanical strength height;
5. do not produce volatile matter after the laser action, pollution-free, etc.
6. the use of element of the present invention is extensive:
1) is used for observing CO 2Deng infrared laser output, determine the orientation, spot size and disperse light beam parameters such as situation.
2) be used for as Analysis for CO 2Export the infrared wavelength display screen of seeing spectrometer of meticulous wavelength Deng infrared laser.
3) be used to be observation CO 2Deng screen of infrared laser interference image etc.
4) be used for CO 2The accurate location or the lasing safety of laser surgey.
Description of drawings:
Fig. 1. luminescent spectrum distribution map (ordinate is luminous intensity I, and abscissa is a wavelength X).
Embodiment 1:
Make the ceramic chip of element by following composition, its relative weight percentage is:
Strontium sulfide 100 wt%
Barium fluoride 8 wt%
Lithium fluoride 10 wt%
Cerium oxide 0.08 wt%
Erbium oxide 0.03 wt%
Specific practice is to take by weighing strontium sulfide 5188mg, barium fluoride 415mg, lithium fluoride 518.8mg, cerium oxide 4.15mg and erbium oxide 1.55mg are placed on press molding in the special mould after mixing grinds well, and are placed in the electric furnace then, under 1000 ℃ of temperature, burnt 2 hours logical simultaneously argon gas.Can get thermoluminescence potsherd of the present invention after the cooling.Its luminescent spectrum is shown in curve among Fig. 12.
Embodiment 2:
Make the ceramic chip of element by following composition, wherein the relative weight percentage of each compound is:
Strontium sulfide 100 wt%
Lithium fluoride 2 wt%
Cerium oxide 0.12 wt%
Holimium oxide 0.06 wt%
Specific practice is to take by weighing strontium sulfide 12786mg, lithium fluoride 255.7mg, and cerium oxide 15.3mg and holimium oxide 7.6mg are deposited on aluminium flake and the potsherd after mixing grinds well, and are placed on then in the electric furnace, burn 0.5 hour under 1250 ℃ of temperature, logical simultaneously argon gas.Can get thermoluminescence display screen of the present invention after the cooling.Its luminescent spectrum is shown in curve among Fig. 13.
Embodiment 3:
By the ceramic chip component that following composition is made, wherein the relative weight percentage of each compound is:
Strontium sulfide 100 wt%
Calcium sulfate 5 wt%
Calcirm-fluoride 5 wt%
Lithium fluoride 5 wt%
Cerium oxide 0.025 wt%
Dysprosia 0.006 wt%
Specific practice is to take by weighing strontium sulfide 18586mg, calcium sulfate 929.3mg, calcirm-fluoride 929.3mg, lithium fluoride 929.3mg, cerium oxide 4.6mg and dysprosia 1.7mg are placed on press molding in the special mould after mixing grinds well, be placed on then in the electric furnace, under 1060 ℃ of temperature, burnt 1 hour, logical simultaneously argon gas.Promptly get thermoluminescence potsherd of the present invention after the cooling.Its luminescent spectrum is shown in curve among Fig. 11.

Claims (2)

1, a kind of 10.6 microns high temperature resistant infrared sensing elements exporting green glow is characterized in that it is made of the fired ceramic chip that forms of multi-element compounds, and the chemical analysis of the multi-element compounds of ceramic chip is (by phase counterweight percentage):
SrS 100 wt%
M(Ca,Sr,Ba)SO 40-6 wt%
M(Ca,Sr,Ba)F 20-8 wt%
M(Li,Na,K)F 2-12 wt%
Ce 0.02-0.12 wt%
R(Er,Ho,Dy,Tm) 0.005-0.05 wt%。
2, according to the described a kind of 10.6 microns high temperature resistant infrared sensing elements exporting green glow of claim 1, it is characterized in that method for cooking is the compound that weighing in proportion constitutes the ceramic chip, press molding behind the mixed grinding, put into stove again, under inert atmosphere, be heated to 1000~1250 ℃ and burnt 0.5~2 hour, after cooling.
CN94112052A 1994-02-24 1994-02-24 Infrared sensor with 10.6 um green light output Expired - Fee Related CN1052371C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN94112052A CN1052371C (en) 1994-02-24 1994-02-24 Infrared sensor with 10.6 um green light output

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN94112052A CN1052371C (en) 1994-02-24 1994-02-24 Infrared sensor with 10.6 um green light output

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CN1104826A true CN1104826A (en) 1995-07-05
CN1052371C CN1052371C (en) 2000-05-10

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CN94112052A Expired - Fee Related CN1052371C (en) 1994-02-24 1994-02-24 Infrared sensor with 10.6 um green light output

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935119A (en) * 1971-11-30 1976-01-27 Owens-Illinois, Inc. Luminescent device, process, composition, and article
US4806772A (en) * 1985-10-10 1989-02-21 Quantex Corporation Infrared sensing device outputting orange light and a process for making the same
US4812660A (en) * 1985-10-10 1989-03-14 Quantex Corporation Photoluminescent materials for outputting yellow-green light
US4812659A (en) * 1985-10-10 1989-03-14 Quantex Corporation Infrared sensing device outputting blue-green light

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