CN110473779B - Novel TFT device structure and manufacturing method thereof - Google Patents
Novel TFT device structure and manufacturing method thereof Download PDFInfo
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- CN110473779B CN110473779B CN201910572648.9A CN201910572648A CN110473779B CN 110473779 B CN110473779 B CN 110473779B CN 201910572648 A CN201910572648 A CN 201910572648A CN 110473779 B CN110473779 B CN 110473779B
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
The invention relates to the technical field of microelectronics, in particular to a novel TFT device structure and a manufacturing method thereof.A flat layer is arranged, and the vertical section of the flat layer is in a step shape, so that the 'sucking effect' of a concave hole generated by a TFT device on a transfer printing (APR) plate in the polyimide coating process can be reduced, the transfer printing (APR) plate can be uniformly inked, and the Polyimide (PI) alignment film thickness is uniform; and the rotation directions of the liquid crystal can be stable and consistent, which is beneficial to increasing the aperture opening ratio and reducing the light leakage probability, thereby improving the picture brightness. Meanwhile, the flat layer with the step-shaped vertical section can reduce the abnormal display phenomenon of the panel, thereby improving the process yield and being beneficial to improving the productivity.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a novel TFT (thin film transistor) device structure and a manufacturing method thereof.
Background
In the CELL (CELL) process, the alignment of Polyimide (PI) is stable in the rotation direction of the liquid crystal because it provides a pretilt angle to the rotation of the liquid crystal, and therefore, the quality of the Polyimide alignment film coating process is an important link for determining the alignment capability of Polyimide, thereby affecting the process yield. In the existing Thin Film Transistor (TFT) device structure, in the polyimide coating process, the TFT device is easily subjected to dishing and transfer printing (APR) plate to generate "sticking effect", which affects the yield of the manufacturing process.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a novel TFT device structure and a manufacturing method thereof are provided.
In order to solve the above technical problem, the first solution adopted by the present invention is:
the utility model provides a novel TFT device structure, includes the base plate, stacks gradually on the base plate surface and is equipped with semiconductor layer, first insulating layer, flat layer, second insulating layer, third insulating layer and transparent conducting layer, the vertical cross-section of flat layer is the echelonment, the via hole has been seted up on the first insulating layer, the via hole corresponds the semiconductor layer sets up, the via hole packing has third insulating layer and transparent conducting layer, the third insulating layer respectively with semiconductor layer, first insulating layer and flat layer contact, transparent conducting layer with the semiconductor layer contact.
The second scheme adopted by the invention is as follows:
a manufacturing method of a novel TFT device structure comprises the following steps:
s1, providing a substrate, and covering a semiconductor layer on the substrate;
s2, forming a first insulating layer covering the surface of the semiconductor layer;
s3, forming a via hole in the first insulating layer;
s4, forming a flat layer and covering the surface of the first insulating layer;
s5, forming a second insulating layer and covering the surface of the flat layer;
s6, forming a third insulating layer which covers the surface of the second insulating layer and is respectively contacted with the flat layer, the first insulating layer and the semiconductor layer;
and S7, forming a transparent conducting layer which covers the surface of the third insulating layer and is in contact with the semiconductor layer.
The invention has the beneficial effects that:
by arranging the flat layer, the vertical section of the flat layer is in a step shape, the 'sucking effect' of a concave hole generated by a TFT (thin film transistor) device on a transfer printing (APR) plate in the polyimide coating process can be reduced, so that the transfer printing (APR) plate can be uniformly inked and the Polyimide (PI) alignment film thickness is uniform; and the rotation directions of the liquid crystal can be stable and consistent, which is beneficial to increasing the aperture opening ratio and reducing the light leakage probability, thereby improving the picture brightness. Meanwhile, the flat layer with the step-shaped vertical section can reduce the abnormal display phenomenon of the panel, thereby improving the process yield and being beneficial to improving the productivity.
Drawings
FIG. 1 is a schematic structural diagram of a novel TFT device structure according to the present invention;
FIG. 2 is a flow chart of the steps of a method of fabricating a structure of a novel TFT device structure according to the present invention;
description of reference numerals:
1. a substrate; 2. a semiconductor layer; 3. a first insulating layer; 4. a planarization layer; 5. a second insulating layer; 6. a third insulating layer; 7. a transparent conductive layer; 8. a metal layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
The most key concept of the invention is as follows: by arranging the novel flat layer structure, the vertical section of the flat layer is in a step shape, so that the 'sucking effect' of pits generated by a TFT (thin film transistor) device on a transfer printing (APR) plate in the polyimide coating process is reduced.
Referring to fig. 1, a technical solution provided by the present invention:
the utility model provides a novel TFT device structure, includes the base plate, stacks gradually on the base plate surface and is equipped with semiconductor layer, first insulating layer, flat layer, second insulating layer, third insulating layer and transparent conducting layer, the vertical cross-section of flat layer is the echelonment, the via hole has been seted up on the first insulating layer, the via hole corresponds the semiconductor layer sets up, the via hole packing has third insulating layer and transparent conducting layer, the third insulating layer respectively with semiconductor layer, first insulating layer and flat layer contact, transparent conducting layer with the semiconductor layer contact.
From the above description, the beneficial effects of the present invention are:
by arranging the flat layer, the vertical section of the flat layer is in a step shape, the 'sucking effect' of a concave hole generated by a TFT (thin film transistor) device on a transfer printing (APR) plate in the polyimide coating process can be reduced, so that the transfer printing (APR) plate can be uniformly inked and the Polyimide (PI) alignment film thickness is uniform; and the rotation directions of the liquid crystal can be stable and consistent, which is beneficial to increasing the aperture opening ratio and reducing the light leakage probability, thereby improving the picture brightness. Meanwhile, the flat layer with the step-shaped vertical section can reduce the abnormal display phenomenon of the panel, thereby improving the process yield and being beneficial to improving the productivity.
Further, the shape of the third insulating layer is matched with the shape of the flat layer, and the shape of the transparent conducting layer is matched with the shape of the third insulating layer.
From the above description, the shape of the third insulating layer is matched with the shape of the flat layer, and the shape of the transparent conductive layer is matched with the shape of the third insulating layer, so that the height difference between layers can be avoided, and the process yield can be improved. Further, a metal layer is arranged between the second insulating layer and the third insulating layer, and the metal layer is respectively in contact with the second insulating layer and the third insulating layer.
Further, the order of the flat layer is 2-5 layers.
From the above description, it can be seen that the flat layer structure with the order of 2-5 layers can escape the bubbles generated during the manufacturing process, thereby improving the problem of uneven film thickness during the printing of the polyimide alignment film.
Referring to fig. 1, another technical solution provided by the present invention:
a manufacturing method of a novel TFT device structure comprises the following steps:
s1, providing a substrate, and covering a semiconductor layer on the substrate;
s2, forming a first insulating layer covering the surface of the semiconductor layer;
s3, forming a via hole in the first insulating layer;
s4, forming a flat layer and covering the surface of the first insulating layer;
s5, forming a second insulating layer and covering the surface of the flat layer;
s6, forming a third insulating layer which covers the surface of the second insulating layer and is respectively contacted with the flat layer, the first insulating layer and the semiconductor layer;
and S7, forming a transparent conducting layer which covers the surface of the third insulating layer and is in contact with the semiconductor layer.
Further, step S4 is specifically:
and placing a photomask above the first insulating layer, and irradiating the upper surface of the photomask by ultraviolet light to form a stepped flat layer, wherein the flat layer covers the surface of the first insulating layer.
Further, the photomask is a halftone mask photomask.
From the above description, it can be known that, by using a halftone mask photomask, a multi-level exposure and development technology is performed on an exposure process, so as to obtain a flat layer structure with a step-shaped vertical cross section, and bubbles generated in the process can escape through the flat layer of the structure, so that the problem of uneven film thickness during printing of a polyimide alignment film is solved, abnormal display is reduced, and the yield is improved.
Further, the shape of the third insulating layer is matched with the shape of the flat layer, and the shape of the transparent conducting layer is matched with the shape of the third insulating layer.
From the above description, the shape of the third insulating layer is matched with the shape of the flat layer, and the shape of the transparent conductive layer is matched with the shape of the third insulating layer, so that the height difference between layers can be avoided, and the process yield can be improved.
Further, the order of the flat layer is 2-5 layers.
From the above description, it can be seen that the flat layer structure with the order of 2-5 layers can escape the bubbles generated during the process, thereby improving the problem of uneven film thickness during the printing of the polyimide alignment film.
Referring to fig. 1, a first embodiment of the present invention is:
a novel TFT device structure comprises a substrate 1, wherein a semiconductor layer 2, a first insulating layer 3, a flat layer 4, a second insulating layer 5, a third insulating layer 6 and a transparent conducting layer 7 are sequentially stacked on the surface of the substrate 1, the vertical section of the flat layer 4 is in a step shape, and the order of the flat layer 4 is 2-5 layers, preferably 3 layers;
the first insulating layer 3 is provided with a via hole, the via hole is arranged corresponding to the semiconductor layer 2 and is symmetrical about the axisymmetric center of the semiconductor layer 2, the via hole is filled with the third insulating layer 6 and the transparent conducting layer 7, the third insulating layer 6 is respectively contacted with the semiconductor layer 2, the first insulating layer 3 and the flat layer 2, and the transparent conducting layer 7 is contacted with the semiconductor layer 2.
The shape of the third insulating layer 6 is adapted to the shape of the planar layer 4, and the shape of the transparent conductive layer 7 is adapted to the shape of the third insulating layer 6.
A metal layer 8 is arranged between the second insulating layer 5 and the third insulating layer 6, and the metal layer 8 is respectively contacted with the second insulating layer 5 and the third insulating layer 6.
Referring to fig. 2, the second embodiment of the present invention is:
a manufacturing method of a novel TFT device structure comprises the following steps:
s1, providing a substrate 1, and covering a semiconductor layer 2 on the substrate 1;
s2, forming a first insulating layer 3 covering the surface of the semiconductor layer 2;
s3, forming a via hole in the first insulating layer 3;
s4, forming a flat layer 4 covering the surface of the first insulating layer 3;
step S4 specifically includes:
placing a photomask above the first insulating layer 3, and irradiating the upper surface of the photomask by ultraviolet light to form a stepped flat layer 4, wherein the flat layer 4 covers the surface of the first insulating layer 3;
the photomask is a halftone mask photomask, the number of steps of the flat layer 4 formed by using halftone mask photomasks with different light transmittances is different, and a proper halftone mask photomask can be selected according to the process requirements.
S5, forming a second insulating layer 5 covering the surface of the flat layer 4;
s6, forming a third insulating layer 6 which covers the surface of the second insulating layer 5 and is respectively contacted with the flat layer 4, the first insulating layer 3 and the semiconductor layer 2;
and S7, forming a transparent conducting layer 7 which covers the surface of the third insulating layer 6 and is in contact with the semiconductor layer 2.
The TFT device without the flat layer structure can be arranged in order to improve the 'adsorption effect', although the TFT device with the structure can solve the 'adsorption effect', the TFT device does not have a positive effect on the display quality, and the TFT device structure designed by the scheme can not only solve the 'adsorption effect', but also have a positive effect on the display quality.
In summary, according to the novel TFT device structure and the manufacturing method thereof provided by the present invention, by providing the flat layer, the vertical cross section of the flat layer is stepped, which can reduce the "suction effect" of the pits generated by the TFT device on the transfer printing (APR) plate during the polyimide coating process, so that the transfer printing (APR) plate can be uniformly inked and the Polyimide (PI) alignment film is uniformly thick; and the rotation directions of the liquid crystal can be stable and consistent, which is beneficial to increasing the aperture opening ratio and reducing the light leakage probability, thereby improving the picture brightness. Meanwhile, the flat layer with the step-shaped vertical section can reduce the abnormal display phenomenon of the panel, thereby improving the process yield and being beneficial to improving the productivity.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (9)
1. The utility model provides a novel TFT device structure, includes the base plate, stacks gradually on the base plate surface and is equipped with semiconductor layer, first insulating layer, flat layer, second insulating layer, third insulating layer and transparent conducting layer, its characterized in that, the vertical cross-section of flat layer is the echelonment, the via hole has been seted up on the first insulating layer, the via hole corresponds the semiconductor layer setting, the via hole packing has third insulating layer and transparent conducting layer, the third insulating layer respectively with semiconductor layer, first insulating layer and flat layer contact, transparent conducting layer with the semiconductor layer contact.
2. The novel TFT device structure of claim 1, wherein the third insulating layer has a shape that is compatible with the shape of the planarization layer, and the transparent conductive layer has a shape that is compatible with the shape of the third insulating layer.
3. The novel TFT device structure of claim 1, wherein a metal layer is disposed between the second insulating layer and the third insulating layer, and the metal layer is in contact with the second insulating layer and the third insulating layer, respectively.
4. The novel TFT device structure of claim 1, wherein the planarization layer has an order of 2-5 layers.
5. A method for fabricating a novel TFT device structure according to any one of claims 1-4, comprising the steps of:
s1, providing a substrate, and covering a semiconductor layer on the substrate;
s2, forming a first insulating layer covering the surface of the semiconductor layer;
s3, forming a via hole in the first insulating layer;
s4, forming a flat layer and covering the surface of the first insulating layer;
s5, forming a second insulating layer and covering the surface of the flat layer;
s6, forming a third insulating layer which covers the surface of the second insulating layer and is respectively contacted with the flat layer, the first insulating layer and the semiconductor layer;
and S7, forming a transparent conducting layer which covers the surface of the third insulating layer and is in contact with the semiconductor layer.
6. The method for manufacturing a novel TFT device structure according to claim 5, wherein step S4 is specifically:
and placing a photomask above the first insulating layer, and irradiating the upper surface of the photomask by ultraviolet light to form a stepped flat layer, wherein the flat layer covers the surface of the first insulating layer.
7. The method of claim 6, wherein said mask is a half-tone mask.
8. The method for fabricating the novel TFT device structure according to claim 5, wherein the shape of the third insulating layer is adapted to the shape of the planarization layer, and the shape of the transparent conductive layer is adapted to the shape of the third insulating layer.
9. The method of claim 6, wherein said planarization layer has an order of 2-5 layers.
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