CN110460231A - A kind of charge pump of anti-single particle transient state - Google Patents
A kind of charge pump of anti-single particle transient state Download PDFInfo
- Publication number
- CN110460231A CN110460231A CN201910869549.7A CN201910869549A CN110460231A CN 110460231 A CN110460231 A CN 110460231A CN 201910869549 A CN201910869549 A CN 201910869549A CN 110460231 A CN110460231 A CN 110460231A
- Authority
- CN
- China
- Prior art keywords
- module
- state
- discharge
- resistance
- diverter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
A kind of charge pump of anti-single particle transient state, including charging module (1), discharge module (2), control module (3), the first diverter module (4) and the second diverter module (5);Charging module (1) is for providing charging current;Discharge module (2) is for providing discharge current;Control module (3) is used to be in charged state when charging module (1) and there are single-ion transient state effects, or discharge module (2) is in discharge condition and there are when single-ion transient state effect, connect the first diverter module (4) and the second diverter module (5), otherwise, the first diverter module (4) and the second diverter module (5) are disconnected;First diverter module (4) is used under on-state shunt charging current, so that the charging current after shunting is in the first preset range;Second diverter module (5) is used under on-state shunt discharge current, so that the discharge current after shunting is in the second preset range.
Description
Technical field
This disclosure relates to field of circuit technology, and in particular, to a kind of charge pump of anti-single particle transient state.
Background technique
In radiation environment, after the sensitive node of high-energy particle bombardment circuit, " electron-hole " that ionization by collision goes out is to being passed
Defeated and collection causes circuit to generate mistake and exports, generate single-ion transient state so that output voltage or electric current generate fluctuation
(Single-Event Transient, SET) effect.Integrated circuit is easy to be influenced by SET and lead to various failures.
Charge pump (Charge-Pump, CP) is mainly used for the circuits such as phaselocked loop and memory, be in phaselocked loop to SET most
For sensitive module, the maximum bursts of error number that the SET effect in charge pump causes phaselocked loop to export is higher by one than other modules
A magnitude.The current switch output of charge pump is its most sensitive node, this is because the electric current after phase lock loop locks, in charge pump
Source switch is in an off state, charge pump switches since SET can inject a positively or negatively transient pulse electric current to filter,
To form transient state pressure drop in filter resistor and be deposited in capacitor, so that filter output voltage changes and goes out
Existing peak pulse, and then lead to phaselocked loop losing lock.
Mainly charge pump is reinforced by voltage-type charge pumping technique and detection compensation technique at present, to resist
SET effect.Voltage-type charge pumping technique is with voltage-type charge pump instead of conventional current type charge pump, but due to its charge pump
Electric current depends on filter voltage, therefore its locking process is unstable, and can influence to lock due to voltage jump when its unlatching
Phase ring exports quality.Detection compensation technique is to weaken the influence of SET current in charge pump by way of detection compensation, is usually set
Biggish current detection threshold is set to distinguish normal charge pump current and SET current, significantly impacts consolidation effect, and go out
When existing SET current, using the time used in the opening process of amplifier in detection compensation also affects consolidation effect.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of charge pumps of anti-single particle transient state, solve the above technical problem.
(2) technical solution
Present disclose provides a kind of charge pump of anti-single particle transient state, including charging module, discharge module, control module,
First diverter module and the second diverter module;The charging module is for providing charging current;The discharge module is for providing
Discharge current;The control module is used to be in charged state when the charging module and there are single-ion transient state effect or institutes
It states discharge module and is in discharge condition and there are when single-ion transient state effect, connect first diverter module and the second divergent die
Otherwise block disconnects first diverter module and the second diverter module;First diverter module is used under on-state to institute
It states charging current to be shunted, so that the charging current after shunting is in the first preset range;Second diverter module is used for
The discharge current is shunted under on-state, so that the discharge current after shunting is in the second preset range.
Optionally, further includes: adjustment module, the circuit for adjusting first diverter module and the second diverter module are joined
Number, so that the charging current or discharge current after shunting are in first preset range or the second preset range.
It optionally, include three detection resistance R in the charge pumpu、Rd、Rs, RuFor detecting the charging current, RdWith
In the detection discharge current, RsFor detecting the charging current after the shunting or discharge current.
Optionally, first diverter module is by the resistance Rd, metal-oxide-semiconductor field effect transistor MN1, switch S2And comparator CMP2
Composition, the resistance Rd, metal-oxide-semiconductor field effect transistor MN1, switch S2And ground is sequentially connected, the resistance RdThe other end is connected to described
Resistance Ru, the comparator CMP2Input terminal be respectively connected to the resistance RuBoth ends, the comparator CMP2Output end
It is connected to the switch S2On-off control terminal.
Optionally, second diverter module is by the resistance Ru, metal-oxide-semiconductor field effect transistor MP1, switch S1, phase inverter and ratio
Compared with device CMP1Composition, the resistance Ru, metal-oxide-semiconductor field effect transistor MP1, switch S1And power supply is sequentially connected, the resistance RuThe other end
It is connected to the resistance Rd, the comparator CMP1Input terminal be respectively connected to the resistance RdBoth ends, the comparator
CMP1Output end be connected to the input terminal of the phase inverter, the output end of the phase inverter is connected to the switch S1On-off
Control terminal.
Optionally, the adjustment module is by resistance RsIt is formed with operational amplifier OPA, the operational amplifier OPA's is defeated
Enter end and is respectively connected to the resistance RsBoth ends, the output end of the operational amplifier OPA is connected to first divergent die
Block or the second diverter module flow through the resistance R with basissCurrent regulation described in circuit parameter.
Optionally, the output resistance of the charging module or discharge module and the resistance Ru、Rd、RsBetween difference it is big
In preset value.
Optionally, the comparator be anti-single particle transition reinforce comparator, by comparing unit, field-effect tube unit and
Latch units composition controls the field-effect tube unit and is in high-impedance state when the comparing unit is used to be bombarded by single-particle,
The latch units are used to be in high-impedance state when the field-effect tube unit, keep output constant.
Optionally, the charging module has an output end up, described for exporting the first state of the charging module
First state is charged state, charged state and there are one of single-ion transient state effects, charging off-state;The electric discharge
Module has an output end dn, and for exporting the second state of the discharge module, second state is discharge condition, electric discharge
State and there are single-ion transient state effects, electric discharge one of off-state.
Optionally, the control module is made of nor gate NOR1, and the input terminal of the nor gate NOR1 is respectively connected to
The output end up and output end dn, the output end of the nor gate NOR1 are connected to first diverter module and second and shunt
Module.
(3) beneficial effect
The charge pump for the anti-single particle transient state that the disclosure provides, has the advantages that
(1) when detecting the electric current that single-ion transient state causes, SET current is flowed into electricity by connecting low-resistance diverter branch
Source or ground avoid single-ion transient state electric current from flowing out and are deposited in subsequent filter;
(2) by avoiding diverter branch in normal charge and discharge and there is no diverter branch is disconnected when single-ion transient state effect
Malfunction, and not influenced the detection threshold value of SET current by charging and discharging currents size, there is biggish design freely
Degree;
(3) by separating the circuit for controlling diverter branch on-off with the circuit of control diverter branch resistance value, operation amplifier
Device can be constantly in magnifying state, without undergoing state to convert, improve response speed, improve the inhibition to single-ion transient state
Ability;
(4) disclosure charge pump only needs to improve unguyed charge pump a little, without adjusting the parameter of former charge pump,
Cost of manufacture can be reduced.
Detailed description of the invention
Fig. 1 diagrammatically illustrates the structural schematic diagram of the charge pump of anti-single particle transient state in the embodiment of the present disclosure;
Fig. 2 diagrammatically illustrates the structural representation of comparator in the charge pump of anti-single particle transient state in the embodiment of the present disclosure
Figure.
Description of symbols:
1- charging module;2- discharge module;37 control modules;The first diverter module of 4-;The second diverter module of 5-;6- is adjusted
Module;7- comparing unit;8- field-effect tube unit;9- latch units.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
The disclosure one implements the charge pump for being illustrated a kind of anti-single particle transient state, refering to fig. 1, to the anti-single particle transient state
Charge pump (hereinafter referred to as charge pump) be described in detail.
Charge pump is by 5 groups of charging module 1, discharge module 2, control module 3, the first diverter module 4 and the second diverter module
At.
Charging module 1 is for providing charging current.It includes there is a switch, for being switched on or switched off charging module 1, also
Lead to an output end up, for exporting the first state of charging module 1, the first state be charged state, charged state and
There are one of single-ion transient state effects, charging off-state.Charged state is normal operating conditions.
Discharge module 2 is for providing discharge current.It includes there is a switch, for being switched on or switched off discharge module 2, also
Lead to an output end dn, for exporting the second state of discharge module 2, second state be discharge condition, discharge condition and
There are one of single-ion transient state effects, electric discharge off-state.Discharge condition is normal operating conditions.In addition, discharge module 2
With can only at most have a module in charging module 1 switch in an ON state, i.e., charge pump be only capable of in charged state or
Discharge condition or off position.
Control module 3 is used to be in charged state when charging module 1 and there are when single-ion transient state effect, or the mould that discharges
Block 2 is in discharge condition and there are when single-ion transient state effect, connects the first diverter module 4 and the second diverter module 5, otherwise,
Disconnect the first diverter module 4 and the second diverter module 5.
Control module 3 is made of nor gate NOR1, and nor gate NOR1 is two input nor gates, two input terminals of NOR1
The output end for being respectively connected to the output end up of charging module 1 and the output end dn, NOR1 of discharge module 2 is connected to the first shunting
Module 4 and the second diverter module 5, specifically, the comparator CMP being connected in the first diverter module 42With the second diverter module 5
In comparator CMP1Enabled control terminal.
It include that there are three detection resistance R in the embodiment of the present disclosure, in charge pumpu、Rd、Rs, RuFor detecting charging current, Rd
For detecting discharge current, RsFor detecting charging current or discharge current after shunting.
First diverter module 4 is used under on-state shunt charging current, so that the charging current after shunting exists
In first preset range.First preset range is the normal range (NR) of charging current, determines, does not do here other as the case may be
Limitation.First diverter module 4 is by resistance Rd, metal-oxide-semiconductor field effect transistor MN1, switch S2And comparator CMP2Composition, resistance Rd, MOS
Effect pipe MN1, switch S2And ground is sequentially connected, resistance RdThe other end is connected to resistance Ru, comparator CMP2Input terminal difference
It is connected to resistance RuBoth ends, comparator CMP2Output end be connected to switch S2On-off control terminal.MN1For N-type MOS field-effect
Pipe, drain electrode are connected to dt, and source electrode is connected to switch S2。
Further, comparator CMP2Positive input terminal be connected to the charging current output end ut of charging module 1, output end
Ut and resistance RuOne end is connected, comparator CMP2Negative input end be connected to resistance RuThe other end works as CMP2Enabled control terminal is effective
And resistance RuOn flow through when having charging current, comparator CMP2High level is exported with closure switch S2, resistance Rd, metal-oxide-semiconductor field effect transistor
MN1, switch S2And the diverter branch of ground composition charging current.
Second diverter module 5 is used under on-state shunt charging current, so that the discharge current after shunting exists
In second preset range.Second preset range is the normal range (NR) of discharge current, determines, does not do here other as the case may be
Limitation.Second diverter module 5 is by resistance Ru, metal-oxide-semiconductor field effect transistor MP1, switch S1, phase inverter and comparator CMP1Composition, resistance
Ru, metal-oxide-semiconductor field effect transistor MP1, switch S1And power supply is sequentially connected, resistance RuThe other end is connected to resistance Rd, comparator CMP1's
Input terminal is respectively connected to resistance RdBoth ends, comparator CMP1Output end be connected to the input terminal of phase inverter, phase inverter it is defeated
Outlet is connected to switch S1On-off control terminal.MP1For p-type metal-oxide-semiconductor field effect transistor, drain electrode is connected to ut, and source electrode is connected to switch
S1。
Further, comparator CMP1Negative input end be connected to the discharge current output end dt of discharge module 2, output end
Dt and resistance RdOne end is connected, comparator CMP1Positive input terminal be connected to resistance RdThe other end works as CMP1Enabled control terminal is effective
And resistance RdOn flow through when having charging current, comparator CMP1High level is exported, and inverted device reverse phase is with closure switch S1, electricity
Hinder Ru, metal-oxide-semiconductor field effect transistor MP1, switch S1And the diverter branch of power supply composition discharge current.
Charge pump further includes adjustment module 6, for adjusting the circuit parameter of the first diverter module 4 and the second diverter module 5,
So that the charging current or discharge current after shunting are in the first preset range or the second preset range.
Further, adjustment module 6 is by resistance RsIt is formed with operational amplifier OPA, the input terminal point of operational amplifier OPA
It is not connected to resistance RsBoth ends, the output end of operational amplifier OPA is connected to the first diverter module 4 and the second diverter module 5,
Resistance R is flowed through with basissCurrent regulating circuit parameter.Specifically, the output end of OPA is connected to metal-oxide-semiconductor field effect transistor MN1、MP1's
Grid, basis flow through RsCharging current or the big minor adjustment of discharge current its output voltage, to adjust metal-oxide-semiconductor field effect transistor
MN1、MP1Resistance value, can dynamically control compensation intensity.
In the embodiment of the present disclosure, the output resistance and resistance R of charging module 1 or discharge module 2u、Rd、RsBetween difference
Greater than preset value.The preset value should make detection resistance Ru、Rd、RsThe far smaller than output electricity of charging module 1 and discharge module 2
Resistance, to provide low-resistance diverter branch when there are single-ion transient state effect, and in no single-ion transient state effect to charge and discharge
Electric current has an impact negligible.
It should be noted that the comparator CMP in the first diverter branch 42With the comparator CMP in the second diverter branch 51
Comparator is reinforced for anti-single particle transition, is made of comparing unit 7, field-effect tube unit 8 and latch units 9, it is relatively more single
When member 7 by single-particle for being bombarded, control field-effect pipe unit 8 is in high-impedance state, and latch units 9 are used to work as field-effect tube list
When member 8 is in high-impedance state, output state is latched, to keep exporting constant.
Specifically, referring to Fig.2, comparing unit 7 is made of two identical comparator CMP_1, CMP_2, field-effect tube list
Member 8 is made of two p-type metal-oxide-semiconductor MP0, MP1 and two N-type metal-oxide-semiconductors MN0, MN1, latch units 9 by two phase inverter inv1,
Inv2 composition.
The positive input of comparator CMP_1, CMP_2 connect input port In+, and negative input connects input port
The grid of the output end connection MP0 and MN1 of In-, comparator CMP_1, the grid of the output end connection MP1 and MN0 of comparator CMP_2
Pole, the source electrode of MP0 connect power supply, the source electrode of MP0 drain electrode connection MP1, and the drain electrode of MP1 is connected to the drain electrode of MN1, the source electrode of MN1
The drain electrode of MN0 is connected, the source electrode of MN0 is connected to the ground, and the drain electrode of MP1 and MN1 are additionally coupled to the input terminal of phase inverter inv1, reverse phase
The output end of device inv1 is connected to the input terminal of inv2, and the output end of inv2 returns to the input terminal for being connected to inv1.In+ is to compare
Compared with device CMP2Or CMP1Positive input, In- is comparator CMP2Or CMP1Negative input, the output end OUT of inv1
As comparator CMP2Or CMP1Output end.
Anti-single particle transition reinforcing comparator receives single-particle and bombards, one in two comparators CMP_1, CMP_2
When occurring the temporary overturning of output state due to SET effect, the comparator of the output state flip only drives two metal-oxide-semiconductors
State changes, and if CMP_1 output state flip can drive MP0, MN1 state to change, CMP_2 output state flip can
Driving MP1, MN0 state changes, so that the circuit that four metal-oxide-semiconductors are constituted is high resistant output, and invl and inv2
The latch units 9 for the composition that joins end to end are able to maintain ortho states, therefore export even if one of comparator is bombarded by single-particle
Logic changes, and the output end which reinforces comparator is still remained stationary state.
In conclusion discharge module 2 does not work when charging module 1 is in charged state and is bombarded by single-particle,
NOR1 exports high level, CMP1And CMP2It is enabled effective, due to RuIn have charging current, therefore CMP2High level is exported to be closed
S2, Rd、MN1、S2And ground forms a diverter branch, to shunt to the charging current under single-particle bombardment, and OPA passes through
R is flowed through in detectionsSize of current to adjust MN1Resistance value so that the charging current of final output is within a preset range.When
When discharge module 2 is in discharge condition and is bombarded by single-particle, charging module 1 does not work, and NOR1 exports high level, CMP1With
CMP2It is enabled effective, due to RdIn have discharge current, therefore CMP1High level is exported to be closed S1, Ru、MP1、S1And power supply is formed
One diverter branch, to shunt to the discharge current under single-particle bombardment, and OPA flows through R by detectionsSize of current
To adjust MP1Resistance value so that the discharge current of final output is within a preset range.In the case of other, i.e. charging module 1
In normal charging condition (including discharge module 2 is bombarded by single-particle and be not affected by single-particle bombardment) or discharge module 2
(including charging module 1 is bombarded by single-particle and be not affected by single-particle bombardment) is in 1 He of regular picture state or charging module
Discharge module 2 does not work, and NOR1 exports low level, CMP at this time1And CMP2It is enabled invalid, the first diverter module 4 and second point
Flow module 5 is in an off state, to prevent from causing Error Compensation.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of charge pump of anti-single particle transient state, including charging module (1), discharge module (2), control module (3), first point
Flow module (4) and the second diverter module (5);
The charging module (1) is for providing charging current;
The discharge module (2) is for providing discharge current;
The control module (3) is used to be in charged state when the charging module (1) and there are single-ion transient state effect or institutes
It states discharge module (2) and is in discharge condition and there are when single-ion transient state effect, connect first diverter module (4) and second
Diverter module (5) otherwise disconnects first diverter module (4) and the second diverter module (5);
First diverter module (4) is used under on-state shunt the charging current, so that the charging after shunting
Electric current is in the first preset range;
Second diverter module (5) is used under on-state shunt the discharge current, so that the electric discharge after shunting
Electric current is in the second preset range.
2. charge pump according to claim 1, wherein further include:
Adjustment module (6), for adjusting the circuit parameter of first diverter module (4) and the second diverter module (5), so that
Charging current or discharge current after shunting is in first preset range or the second preset range.
3. charge pump according to claim 2, wherein include three detection resistance R in the charge pumpu、Rd、Rs, RuWith
In the detection charging current, RdFor detecting the discharge current, RsFor detecting charging current or electric discharge after the shunting
Electric current.
4. charge pump according to claim 3, wherein first diverter module (4) is by the resistance Rd, MOS field-effect
Pipe MN1, switch S2And comparator CMP2Composition, the resistance Rd, metal-oxide-semiconductor field effect transistor MN1, switch S2And ground is sequentially connected, institute
State resistance RdThe other end is connected to the resistance Ru, the comparator CMP2Input terminal be respectively connected to the resistance RuTwo
End, the comparator CMP2Output end be connected to the switch S2On-off control terminal.
5. charge pump according to claim 3, wherein second diverter module (5) is by the resistance Ru, MOS field-effect
Pipe MP1, switch S1, phase inverter and comparator CMP1Composition, the resistance Ru, metal-oxide-semiconductor field effect transistor MP1, switch S1And power supply according to
It is secondary to be connected, the resistance RuThe other end is connected to the resistance Rd, the comparator CMP1Input terminal be respectively connected to the electricity
Hinder RdBoth ends, the comparator CMP1Output end be connected to the input terminal of the phase inverter, the output end of the phase inverter connects
It is connected to the switch S1On-off control terminal.
6. charge pump according to claim 3, wherein the adjustment module (6) is by resistance RsWith operational amplifier OPA group
At the input terminal of the operational amplifier OPA is respectively connected to the resistance RsBoth ends, the operational amplifier OPA's is defeated
Outlet is connected to first diverter module (4) and the second diverter module (5), flows through the resistance R with basissCurrent regulation
The circuit parameter.
7. charge pump according to claim 3, wherein the output resistance of the charging module (1) or discharge module (2) with
The resistance Ru、Rd、RsBetween difference be greater than preset value.
8. charge pump according to claim 4 or 5, wherein the comparator is that comparator is reinforced in anti-single particle transition, by
Comparing unit (7), field-effect tube unit (8) and latch units (9) composition, the comparing unit (7) are used for by single-particle
When bombardment, controls the field-effect tube unit (8) and be in high-impedance state, the latch units (9) are used to work as the field-effect tube list
First (8) are in high-impedance state, keep output constant.
9. charge pump according to claim 1, in which:
The charging module (1) has an output end up, for exporting the first state of the charging module (1), described first
State is charged state, charged state and there are one of single-ion transient state effects, charging off-state;
The discharge module (2) has an output end dn, for exporting the second state of the discharge module (2), described second
State is discharge condition, discharge condition and there are one of single-ion transient state effects, electric discharge off-state.
10. charge pump according to claim 9, wherein the control module (3) is made of nor gate NOR1, it is described or
The input terminal of NOT gate NOR1 is respectively connected to the output end up and output end dn, and the output end of the nor gate NOR1 is connected to
First diverter module (4) and the second diverter module (5).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910869549.7A CN110460231B (en) | 2019-09-16 | 2019-09-16 | Charge pump resisting single-particle transient |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910869549.7A CN110460231B (en) | 2019-09-16 | 2019-09-16 | Charge pump resisting single-particle transient |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110460231A true CN110460231A (en) | 2019-11-15 |
CN110460231B CN110460231B (en) | 2021-04-23 |
Family
ID=68491970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910869549.7A Active CN110460231B (en) | 2019-09-16 | 2019-09-16 | Charge pump resisting single-particle transient |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110460231B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023087835A1 (en) * | 2021-11-16 | 2023-05-25 | 北京卫星制造厂有限公司 | Spaceborne secondary power supply single event transient suppression circuit |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102291128A (en) * | 2011-06-28 | 2011-12-21 | 电子科技大学 | Charge pump and low-pass filter component with anti-single particle radiation circuit |
CN102347760A (en) * | 2010-07-27 | 2012-02-08 | 中兴通讯股份有限公司 | Charge pump and phase locked loop using charge pump |
CN102754335A (en) * | 2010-01-19 | 2012-10-24 | 高通股份有限公司 | High voltage, high frequency esd protection circuit for RF ICs |
CN102983857A (en) * | 2012-11-15 | 2013-03-20 | 中国航天科技集团公司第九研究院第七七一研究所 | Phase-locked loop resistant to single particle transient state |
US20180129074A1 (en) * | 2015-12-22 | 2018-05-10 | Johnson & Johnson Vision Care, Inc. | High-voltage h-bridge control circuit for a lens driver of an electronic ophthalmic lens |
-
2019
- 2019-09-16 CN CN201910869549.7A patent/CN110460231B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102754335A (en) * | 2010-01-19 | 2012-10-24 | 高通股份有限公司 | High voltage, high frequency esd protection circuit for RF ICs |
CN102347760A (en) * | 2010-07-27 | 2012-02-08 | 中兴通讯股份有限公司 | Charge pump and phase locked loop using charge pump |
CN102291128A (en) * | 2011-06-28 | 2011-12-21 | 电子科技大学 | Charge pump and low-pass filter component with anti-single particle radiation circuit |
CN102983857A (en) * | 2012-11-15 | 2013-03-20 | 中国航天科技集团公司第九研究院第七七一研究所 | Phase-locked loop resistant to single particle transient state |
US20180129074A1 (en) * | 2015-12-22 | 2018-05-10 | Johnson & Johnson Vision Care, Inc. | High-voltage h-bridge control circuit for a lens driver of an electronic ophthalmic lens |
Non-Patent Citations (1)
Title |
---|
李天文等: "单粒子翻转加固锁存器分析与辐照试验验证", 《微电子学》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023087835A1 (en) * | 2021-11-16 | 2023-05-25 | 北京卫星制造厂有限公司 | Spaceborne secondary power supply single event transient suppression circuit |
Also Published As
Publication number | Publication date |
---|---|
CN110460231B (en) | 2021-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10176939B2 (en) | High-voltage DC circuit breaker for blocking current flowing through DC lines | |
KR101522412B1 (en) | Bi-directional DC interruption device | |
TWI553996B (en) | Charge and discharge control circuit and battery device | |
KR101688921B1 (en) | Direct current circuit breaker | |
CN107785968A (en) | The battery short circuit protection circuit of charge power supply | |
US20160329179A1 (en) | High-voltage dc circuit breaker | |
CN105811941B (en) | Power-on reset circuit | |
CN106330147B (en) | Inductance short-circuit protection circuit and method | |
CN105406846B (en) | A kind of power tube drive control circuit suitable for solid-state power controller | |
WO2021008357A1 (en) | Battery protection controller and battery charging and discharging protection circuit | |
CN113541453B (en) | High-side bootstrap power supply control system in GaN power tube half-bridge drive | |
WO2015163990A1 (en) | Wide-range level-shifter | |
KR20220042302A (en) | Battery protection circuit and lithium battery system | |
CN104466912B (en) | A kind of linear voltage regulator with short-circuit protection | |
CN102064678B (en) | Gate drive circuit of switch power supply | |
CN104009613A (en) | By-pass switch trigger device of MMC flexible direct-current electronic module | |
CN110460231A (en) | A kind of charge pump of anti-single particle transient state | |
CN114665560A (en) | Heavy current charging protection circuit | |
CN105528322B (en) | A kind of optional output driving circuit of anti-hot plug driving | |
CN109428474B (en) | High-voltage starting circuit and high-voltage charging control method | |
TW202337105A (en) | Charge and discharge control circuit and battery device including the same | |
CN208675196U (en) | A kind of tri-state Zero-cross comparator circuit and power management chip | |
CN106291064B (en) | Closed-loop voltage detection system | |
CN109842205A (en) | A kind of power supply automatic switchover circuit | |
US11962240B2 (en) | Auto calibration dead-time control circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |