CN110456097A - A kind of intelligent pipeline of fluid inspection - Google Patents
A kind of intelligent pipeline of fluid inspection Download PDFInfo
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- CN110456097A CN110456097A CN201910764283.XA CN201910764283A CN110456097A CN 110456097 A CN110456097 A CN 110456097A CN 201910764283 A CN201910764283 A CN 201910764283A CN 110456097 A CN110456097 A CN 110456097A
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- 239000012530 fluid Substances 0.000 title claims abstract description 30
- 238000007689 inspection Methods 0.000 title claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 15
- 238000002493 microarray Methods 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 13
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 13
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 13
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 13
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
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- 238000000137 annealing Methods 0.000 claims description 3
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D5/00—Protection or supervision of installations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M10/00—Hydrodynamic testing; Arrangements in or on ship-testing tanks or water tunnels
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P13/00—Indicating or recording presence, absence, or direction, of movement
- G01P13/0006—Indicating or recording presence, absence, or direction, of movement of fluids or of granulous or powder-like substances
- G01P13/0053—Indicating or recording presence, absence, or direction, of movement of fluids or of granulous or powder-like substances by using dynamo-electric effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P13/00—Indicating or recording presence, absence, or direction, of movement
- G01P13/02—Indicating direction only, e.g. by weather vane
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
- G01P5/08—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring variation of an electric variable directly affected by the flow, e.g. by using dynamo-electric effect
-
- G—PHYSICS
- G08—SIGNALLING
- G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
- G08C17/00—Arrangements for transmitting signals characterised by the use of a wireless electrical link
- G08C17/02—Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Aviation & Aerospace Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Fluid Mechanics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention is a kind of intelligent pipeline of fluid inspection, includes: pipeline, data acquisition module, data processing module, wireless transmitter module, wireless receiving module, display screen and power supply module.The power supply module, data acquisition module, wireless transmitter module are sequentially connected, and the data acquisition module is perpendicularly fixed at inner wall of the pipe, and the power supply module and wireless transmitter module are sealingly fastened in insides of pipes upper wall;The wireless receiving module, data processing module, display screen are sequentially connected, and are fixed on the outside of pipeline.Data acquisition module deformation that bends with the movement of fluid, then generates associated electric signal, to realize the monitoring to fluids within pipes state.The present invention, which can be detected effectively, is difficult to the fluid state signal collected with monitoring conventional pipeline system, suitable for the pipe-line system demand under many complex states.
Description
Technical field
The invention belongs to intelligent pipeline fields, more particularly to a kind of intelligent pipeline of fluid inspection.
Background technique
In industrial production life, pipe-line system is because being widely used in a variety of industries and multiple fields the characteristics of its own
In, such as solid particle, powder, slurry, fluid, the transport of gas etc..In actual industrial production, image-stone oiling labour movement
It is defeated, sewage treatment, in these important specific scenes of natural gas transportation, the extremely important role of pipe-line system performer.It can
To say that pipeline is the lifeline of these industries, however, due to the huge feature and its complexity of pipe-line system, to fluids within pipes
Or the status monitoring of gas becomes a problem, every year due to relevant monitoring caused some big and small accidents not in place
I is unequal to its number, such as in oil gas field, consequence is not only economic loss, and huge pollution but will be brought to environment.
Traditional Monitoring Pinpelines mainly pass through the mode by way of manual inspection with state of matter in interim inspection pipe
Judgement fluid state is carried out, these modes are not only time-consuming and laborious more to lack certain timeliness, it is difficult to which faster finds
Relevant issues and real-time perfoming monitoring.And also occur some new technologies with the development of technology, such as pass through fluids within pipes
Quality and volumetric analysis, emi analysis, pipeline pressure analysis etc. mode, wherein being similar to side as quality and volumetric analysis
Formula, which often waits tube fluids state to have occurred and that after variation or that some failures have occurred and that, can just monitor, and back two
Its problem of being primarily present of kind of mode be also in terms of real-time monitoring mode lack certain superiority, meanwhile, monitoring range is small,
It is also some shortcomings of these technologies that equipment, which needs regular maintenance,.
Summary of the invention
The purpose of the present invention is provide one kind for traditional more old-fashioned pipeline fluid monitoring mode with novel biography
A kind of intelligent pipeline of fluid inspection based on sensor perception, has and is capable of the speed of real-time monitoring pipeline fluid, direction and
The function of flow regime.
To reach above-mentioned function, this monitoring system is realized by following series technical project: a kind of intelligence of fluid inspection
Can pipeline, comprising: pipeline, data acquisition module, data processing module, wireless transmitter module, wireless receiving module, display screen and
Power supply module.The power supply module, data acquisition module, wireless transmitter module are sequentially connected, and the data acquisition module is vertical
It is fixed on inner wall of the pipe, the power supply module and wireless transmitter module are sealingly fastened in insides of pipes upper wall;The wireless receiving
Module, data processing module, display screen are sequentially connected, and are fixed on the outside of pipeline.Stream in the data collecting module collected pipeline
The force electrical signal of body, emits through wireless transmitter module, receives force electrical signal by wireless receiving module, then believe through data processing module
Force electrical signal is converted to flow speed data by number processing, is finally shown by display screen.
The data acquisition module is piezoelectricity/pressure drag double mode flexible sensor, and the sensor includes piezoelectric layer and pressure
Resistance layer;The piezoelectric layer is by the Piezoelectric anisotropy film with micro-structure, and is sprayed on gold electrode on laminated film and constitutes;It is described
Piezoresistance layer is made of the graphene film for being sprayed on the gold electrode surfaces with micro-structure and the PDMS with micro-structure;It is described
Micro array structure is positive truncated rectangular pyramids microarray, and the ratio k and array heights h of the array upper bottom surface side length and bottom surface side length are full
Foot:
Wherein,For the first variable, specially
For the second variable, tool
Body is For third variable, speciallycij、eijWith
kijIt is elastic stiffness constant, piezoelectric stress constant and dielectric constant respectively;a2Be positive truncated rectangular pyramids bottom surface side length;F is expressed as pressure,
T is the time, and R is voltmeter internal resistance, and V is the output voltage of piezoelectric layer.
Further, the positive truncated rectangular pyramids microarray is preferably pyramid microarray.
Further, it is h=40 μm that the positive truncated rectangular pyramids microarray is highly preferred.
Further, the positive truncated rectangular pyramids microarray of the piezoelectric layer is prepared by the following method:
(1) 1g BTO nano particle is soaked in 10mL H2O2, impregnating 6h under the conditions of 90 DEG C makes BTO nano grain surface
Modified, drying obtains h-BTO powder.
(2) the h-BTO powder 0.025g for taking step (1) to be prepared, is dissolved in the DMF of 10mL, while taking 0.225g
P (VDF-TrFE) powder is dissolved in the DMF of another 10mL, is then uniformly mixed two parts of DMF solutions;
(3) mixed solution in step (2) is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size
For 1cm × 1cm, freeze-day with constant temperature to film-forming, then make annealing treatment 2h at 120 DEG C and then cool down, after being cooled to room temperature, it will answer
Film is closed to remove from silicon template.
(4) gold electrode that two surfaces of the laminated film that step (3) obtains are plated to 100nm thickness respectively, connects respectively
A lead is connect, the piezoelectric membrane with positive truncated rectangular pyramids microarray is prepared.
Further, the positive truncated rectangular pyramids microarray of the piezoresistance layer is prepared by the following method:
(1) PDMS is uniformly mixed with curing agent according to mass ratio 10:1, vacuum degassing bubble;
(2) PDMS for removing bubble is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size is 1cm
× 1cm, freeze-day with constant temperature to film-forming, and removed from silicon template;
(3) by 10mL 0.75mg/mL graphene solution drop coating to the surface PDMS and gold electrode surfaces with microarray,
And dry, it draws a lead on the surface of graphene respectively, obtains the piezoresistance layer with positive truncated rectangular pyramids microarray.
Compared with prior art, the invention has the advantages that: the data acquisition module that the application uses for piezoelectricity/
Pressure drag double mode flexible sensor, from the point of view of the structure of sensor itself, since the transducing signal of piezoelectric layer and piezoresistance layer passes through
Different electrode output, avoids interfering with each other for two groups of signals, ensure that the pipeline fluid condition relevant data being collected into
Accuracy.Double mode sensor cooperates piezoelectric sensing mechanism with pressure drag sensor mechanism, complete single-mode sensor without
Method realize function, can either detect static force change, and can feed back high-frequency signal stimulation, detection object stress or
In deformation process, the advantages of obtaining more information, combine piezoelectric transducer and piezoresistive transducer.In sensing capabilities side
Face, the sensing capabilities of double mode sensor do not decline not only, and sense since double mode sensor is combined than single-mode
Device is thinner lighter, and double mode sensor shows more preferably sensing capabilities.And it is analyzed positive four in sensor by calculating
Influence of the terrace with edge microarray to piezoelectric layer sensing capabilities, when the geometric parameter k and h of positive truncated rectangular pyramids micro-structure increase, piezoelectric layer
Output voltage values increase, and sensitivity increases.Optimal micro-structure-pyramid micro-structure has been determined, and has passed through the method system of pour mask
The standby sensing layer with pyramid micro structure array, can not only real-time monitoring pipeline stress condition, and can real-time detection
The flow velocity of fluid out.The intelligent pipeline has the characteristics of speed for capableing of real-time monitoring pipeline fluid, direction and flow regime.
Detailed description of the invention
Fig. 1 is the workflow block diagram of intelligent pipeline of the present invention;
Fig. 2 is piezoelectricity of the present invention/pressure drag double mode sensor working principle diagram;
Fig. 3 double mode sensor and single-mode cell pressure and Bending Deformation sensing capabilities comparative experimental data;
Fig. 4 is the simulation effect picture that double mode sensor is connect with pipeline and each module connects;
Fig. 5 is a kind of pipe-line system entirety and local appearance figure.
Specific embodiment
As shown in Fig. 1,4, for a kind of intelligent pipeline of fluid inspection of the present invention, comprising: pipeline, data acquisition module, number
According to processing module, wireless transmitter module, wireless receiving module, display screen and power supply module.The power supply module, data acquisition module
Block, wireless transmitter module are sequentially connected, and the data acquisition module is perpendicularly fixed at inner wall of the pipe, the power supply module and wireless
Transmitting module is sealingly fastened in insides of pipes upper wall;The wireless receiving module, data processing module, display screen are sequentially connected,
It is fixed on the outside of pipeline.The force electrical signal of the data collecting module collected fluids within pipes, emits through wireless transmitter module, by
Wireless receiving module receives force electrical signal, then force electrical signal is converted to flow speed data through data processing module signal processing, most
It is shown eventually by display screen.
The data acquisition module is piezoelectricity/pressure drag double mode flexible sensor, as shown in Fig. 2, including piezoelectric layer and pressure
Resistance layer;The piezoelectric layer is by the Piezoelectric anisotropy film with micro-structure, and is sprayed on gold electrode on laminated film and constitutes;It is described
Piezoresistance layer is made of the graphene film for being sprayed on the gold electrode surfaces with micro-structure and the PDMS with micro-structure;It is described
Micro array structure is positive truncated rectangular pyramids microarray.According to the constitutive equation of piezoelectric effect:
Wherein cij、eijAnd kijIt is elastic stiffness constant, piezoelectric stress constant and dielectric constant, σ respectivelyijFor stress, εij
For strain, D is dielectric displacement, and E is electric field strength.
When piezoelectric membrane is acted on by normal force, σ 11 and σ 22 are equal to 0, above formula (2) and (3) simultaneous, expression are as follows:
ε 11, ε 22 and ε 33 is eliminated to obtain:
Wherein: D3For method phase dielectric displacement,
Again according to the relationship between electric field and potential:
Further obtain the method phase dielectric displacement of piezoelectric membrane are as follows:
V is the output voltage of piezoelectric membrane, and l is the thickness of P (VDF-TrFE) film.
According to Maxwell equation and Ohm's law, the size and dielectric displacement D of electric current I3, voltage V it is related with resistance R, root
According to the relationship between them:
Wherein, t is the time, and A is piezoelectric membrane forced area.By electric current I and dielectric displacement D3Elimination after obtain:
Again
According to primary condition V(t=0)=0, output voltage V are as follows:
In formula:
In order to further increase the piezoelectric effect of piezoelectric membrane, positive truncated rectangular pyramids microarray knot is introduced on flat film surface
Structure, relative to flat film structure, as shown in Figure 1, the sectional area of truncated rectangular pyramids structure in vertical direction is different, piezoelectricity is thin
The normal stress σ that film is subject to33It is equal, and stress σ of the truncated rectangular pyramids on vertical cross-section in vertical direction33It is different.
If the side length of truncated rectangular pyramids upper surface is a1, a length of height of bottom sides is h (Fig. 1).Then the mean stress of truncated rectangular pyramids can
It indicates are as follows:
In formula, geometric parameter k=a is defined2/a1.As k=1, the area of the upper top surface of positive truncated rectangular pyramids is equal to bottom surface
Area is considered as a micro unit for flat film.It can be seen that working as the height h and bottom sides of truncated rectangular pyramids from formula (17)
Long a2When constant, upper top surface side length a1It is smaller, mean stress σ '33It is bigger.It is defeated between positive truncated rectangular pyramids upper and lower end face in order to obtain
Voltage value out brings mean stress σ ' 33 into
To obtain:
From formula (1) it can be seen that the output voltage and positive truncated rectangular pyramids micro-structure and geometric parameter k of piezoelectric transducer and
Height h is directly proportional.So in order to improve the sensing capabilities of piezoelectric sensing layer, it should the area of top surface as far as possible in reduction micro-structure
With the height for increasing micro-structure.Therefore, when positive truncated rectangular pyramids are pyramid structure, piezoelectric layer sensing capabilities are optimal.Work as gold
The bottom edge of word tower micro-structure is elongated when being 60 μm, and the maximum height that current micro-structure processing technology can be prepared is 40 μm.
The piezoelectric layer is prepared by the following method:
(1) 1g BTO nano particle is soaked in 10mL H2O2, impregnating 6h under the conditions of 90 DEG C makes BTO nano grain surface
Modified, drying obtains h-BTO powder.
(2) the h-BTO powder 0.025g for taking step (1) to be prepared, is dissolved in the DMF of 10mL, while taking 0.225g
P (VDF-TrFE) powder is dissolved in the DMF of another 10mL, is then uniformly mixed two parts of DMF solutions;
(3) mixed solution in step (2) is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size
For 1cm × 1cm, freeze-day with constant temperature to film-forming, then make annealing treatment 2h at 120 DEG C and then cool down, after being cooled to room temperature, it will answer
Film is closed to remove from silicon template.
(4) two surfaces of the laminated film obtained in step (3) plate 100nm thickness using electron beam evaporation technique respectively
The gold electrode of degree is separately connected a lead, and the piezoelectric membrane with positive truncated rectangular pyramids microarray is prepared.
The piezoresistance layer includes following preparation method:
(1) PDMS is DC184 using Dow corning company model, by PDMS and curing agent according to mass ratio
10:1 is uniformly mixed, vacuum degassing bubble;
(2) PDMS for removing bubble is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size is 1cm
× 1cm, freeze-day with constant temperature to film-forming, and removed from silicon template;
(3) by 10mL 0.75mg/mL graphene solution drop coating to the surface PDMS and gold electrode surfaces with microarray,
And dry, and draw a lead on the surface of graphene, obtain the piezoresistance layer with positive truncated rectangular pyramids microarray.
Embodiment
The data acquisition module of the present embodiment is piezoelectricity/pressure drag double mode flexible sensor, what micro array structure used
It is 60 μm of bottom edge side length, the pyramid microarray of 40 μm of height.Piezoelectricity/pressure drag double mode pressure sensor packet as shown in Figure 2
Include piezoelectric layer and piezoresistance layer two parts.It is prepared for gold electrode in the upper and lower faces of piezoelectric layer, the piezoelectric signal of piezoelectric layer output is logical
Cross gold electrode access voltmeter.One layer of rGO is covered in the micro-structure surface of piezoelectric layer and piezoresistance layer.Pressure drag signal passes through two
Layer rGO is input to ammeter.The transducing signal of piezoelectric layer and piezoresistance layer is exported by different electrodes, avoids two groups of signals
It interferes with each other, it is ensured that the accuracy of test.
In order to compare double mode sensor and single mode sensor performance, under identical experiment condition, by single-mode
Piezoresistive transducer and piezoelectric transducer stick together, the pressure and bending strain sensing capabilities of combination sensor are done
Test.Experimental data figure such as Fig. 3, when being detected to the loading speed of pressure, voltmeter internal resistance R=10M Ω, such as Fig. 3 (a) institute
Show, the minimum loading speed that double mode sensor piezoelectric layer can perceive is 0.1kPa/s, and the sensitivity S of double mode sensor
=0.23, linearity L=0.98;The sensing sensitivity S=0.18 of single-mode piezoelectric transducer, double mode sensor are detecting
There is higher sensitivity when pressure-loaded rate.Equally the bending strain detection performance of two kinds of sensors is compared, from
It can be seen that the sensing sensitivity of piezoelectric layer is 0.18V/ (%s in double mode in Fig. 3 (b)-1), highest detection strain rate is
10%s-1.And lower (0.12V/ (the %s of sensitivity of single mode combination sensing-1)), highest detection strain rate is 9%s-1.This
Outside, piezoresistance layer is 2.16 to the sensing sensitivity of bending strain in double mode sensor, the sensitivity of single mode combination sensor
It is 1.85.Therefore, in bending strain test experience, double mode sensor shows more excellent than single-mode combination sensor
Sensing capabilities more.In addition, according to further related experiment, by specifically simulating pipeline and tying everyday common sense, in pipeline
The flow rate of fluid there are in fact a kind of linear relationship with the strain rate of the sensor in above-mentioned datagram, i.e.,
When fluids within pipes flow rate is bigger, the strain rate (ratio of the time of the degree and variation of variation) of sensor also can
With increasing, on the contrary, corresponding strain rate can also become smaller therewith when flow rate is smaller, further, by passing
The relationship of the sensing characteristics of the strain rate of sensor and two kinds of different mode sensors, we can establish fluids within pipes flowing
Relationship between the signal that rate and sensor monitor and output signal, the monitoring for entire pipe-line system provide foundation.
As shown in figure 5, first numbering each junction of piping drawing, this pipeline prison is further described on the whole with this
The specific embodiment of examining system.It is passed through certain fluid (gas or liquid) from upper left side nozzle in figure, passes through pipeline meeting
By the junction of each number, 1. 2. 3. 4. 5. locates the signal monitored respectively fluid when in stablizing and be translated into
Related data, the result that the be transported to end PC of five local sensors ultimately generates at this time should be it is roughly the same, if at this time
2. 3. the pipeline internal vent or other reasons of the adjustment junction that 4. some ground 5. is thought make the speed of the fluid in pipeline
Certain change occurs for degree and direction, and under the conditions of this, the sensor 2. 3. 4. 5. located can not only monitor different flow-likes
State and data when making to stablize change, therefore the sensor 1. located equally also can export different signal conditions, pass through
These final outputs to the end PC signal intensity acquisition and comparison, the analysis of further computer may finally the place of monitoring be
The pipeline conditions variation at the position of which number causes the flow regime of fluid to change, and further, can be divided with this
Which specific junction of analysis pipeline goes wrong or failure, achievees the purpose that this intelligent pipeline monitors system.
Claims (5)
1. a kind of intelligent pipeline of fluid inspection characterized by comprising pipeline, data acquisition module, data processing module,
Wireless transmitter module, wireless receiving module, display screen and power supply module.The power supply module, data acquisition module, wireless transmission
Module is sequentially connected, and the data acquisition module is perpendicularly fixed at inner wall of the pipe, and the power supply module and wireless transmitter module are close
Sealing schedules insides of pipes upper wall;The wireless receiving module, data processing module, display screen are sequentially connected, and are fixed on pipeline
Outside.The force electrical signal of the data collecting module collected fluids within pipes, emits through wireless transmitter module, by wireless receiving mould
Block receives force electrical signal, then force electrical signal is converted to flow speed data through data processing module signal processing, finally by display screen
Display.
The data acquisition module is piezoelectricity/pressure drag double mode flexible sensor, and the sensor includes piezoelectric layer and piezoresistance layer;
The piezoelectric layer is by the Piezoelectric anisotropy film with micro-structure, and is sprayed on gold electrode on laminated film and constitutes;The pressure drag
Layer is made of the graphene film for being sprayed on the gold electrode surfaces with micro-structure and the PDMS with micro-structure;Micro- battle array
Array structure is positive truncated rectangular pyramids microarray, and the ratio k and array heights h of the array upper bottom surface side length and bottom surface side length meet:
Wherein,For the first variable, specially
For the second variable, specially For third variable, speciallycij、eijAnd kijPoint
It is not elastic stiffness constant, piezoelectric stress constant and dielectric constant;a2Be positive truncated rectangular pyramids bottom surface side length;F is expressed as pressure, and t is
Time, R are voltmeter internal resistance, and V is the output voltage of piezoelectric layer.
2. intelligent pipeline according to claim 1, which is characterized in that the positive truncated rectangular pyramids microarray is preferably that pyramid is micro-
Array.
3. intelligent pipeline according to claim 1, which is characterized in that the highly preferred positive truncated rectangular pyramids microarray is h=40 μ
m。
4. intelligent pipeline according to claim 1, which is characterized in that the positive truncated rectangular pyramids microarray of the piezoelectric layer passes through following
Method preparation:
(1) 1g BTO nano particle is soaked in 10mL H2O2, impregnating 6h under the conditions of 90 DEG C changes BTO nano grain surface
Property, drying obtains h-BTO powder.
(2) the h-BTO powder 0.025g for taking step (1) to be prepared, is dissolved in the DMF of 10mL, while taking 0.225g P
(VDF-TrFE) powder is dissolved in the DMF of another 10mL, is then uniformly mixed two parts of DMF solutions;
(3) mixed solution in step (2) is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size is
1cm × 1cm, freeze-day with constant temperature to film-forming, then make annealing treatment 2h at 120 DEG C and then cool down, it, will be compound after being cooled to room temperature
Film is removed from silicon template.
(4) gold electrode that two surfaces of the laminated film that step (3) obtains are plated to 100nm thickness respectively, is separately connected one
The piezoelectric membrane with positive truncated rectangular pyramids microarray is prepared in root lead.
5. intelligent pipeline according to claim 1, which is characterized in that the positive truncated rectangular pyramids microarray of the piezoresistance layer passes through following
Method preparation:
(1) PDMS is uniformly mixed with curing agent according to mass ratio 10:1, vacuum degassing bubble;
(2) PDMS for removing bubble is spin-coated in the silicon template with positive truncated rectangular pyramids microarray, silicon template size be 1cm ×
1cm, freeze-day with constant temperature to film-forming, and removed from silicon template;
(3) it by 10mL 0.75mg/mL graphene solution drop coating to the surface PDMS and gold electrode surfaces with microarray, and dries
It is dry, it draws a lead on the surface of graphene respectively, obtains the piezoresistance layer with positive truncated rectangular pyramids microarray.
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