CN110444667A - A kind of preparation method of organic diode laminated film - Google Patents

A kind of preparation method of organic diode laminated film Download PDF

Info

Publication number
CN110444667A
CN110444667A CN201910720334.9A CN201910720334A CN110444667A CN 110444667 A CN110444667 A CN 110444667A CN 201910720334 A CN201910720334 A CN 201910720334A CN 110444667 A CN110444667 A CN 110444667A
Authority
CN
China
Prior art keywords
thickness
organic
laminated film
organic diode
fluorophenyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910720334.9A
Other languages
Chinese (zh)
Inventor
蓝碧健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taicang Biqi New Material Research Development Co Ltd
Original Assignee
Taicang Biqi New Material Research Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taicang Biqi New Material Research Development Co Ltd filed Critical Taicang Biqi New Material Research Development Co Ltd
Priority to CN201910720334.9A priority Critical patent/CN110444667A/en
Publication of CN110444667A publication Critical patent/CN110444667A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20Organic diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/654Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes

Abstract

The invention belongs to thin film technique field, specially a kind of preparation method of organic diode laminated film.Method proposed by the present invention is successively vacuum evaporation 7 on carbon cloth, 8- dihydroxy -3- (4 '-fluorophenyl) cumarin, N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5-, aluminium, obtain organic diode laminated film.The commutating ratio of the organic diode laminated film is 6,210,000 ~ 6,930,000.

Description

A kind of preparation method of organic diode laminated film
Technical field
The invention belongs to thin film technique field, specially a kind of preparation method of organic diode laminated film.
Background technique
Organic electronics are exactly to use organic matter as the electronics of " conduction " material, i.e., with organic molecule and macromolecule material Electronic device and relevant issues based on material, especially high-molecular compound semiconductor material, grinding in terms of its electric conductivity Study carefully and obtains Nobel chemistry Prize in 2000.Diode is in electronic component, and there are two the devices of electrode for a kind of tool, only allows electricity Stream is flowed through by single direction, and many uses are the functions using its rectification.
Liu Ming etc. discloses a kind of organic diode device and preparation method thereof (CN102074653A), belongs to semiconductor skill Art field.The organic diode device, including substrate, anode, organic semiconductor layer and cathode, anode and organic semiconductor layer Between also set up at least one layer of organic Iy self-assembled layer, organic Iy self-assembled layer is made of metallo-organic complex;Anode by except gold with Outer anode metal or alloy is made.The described method includes: making anode on substrate;It makes on the anode organic from group Fill layer;Organic semiconductor layer is made on organic Iy self-assembled layer;Cathode is made on the organic semiconductor layer;It is described to have Machine Iy self-assembled layer is made of metallo-organic complex;The anode by addition to gold anode metal or alloy be made.The invention Organic diode device performance is high, stability is good and at low cost, and preparation process is simple, reproducible.
Huang such as discloses a kind of organic diode and preparation method thereof (CN102891264A).The organic diode packet Transparent flexible substrate, transparent positive electrode, transparent negative electrode, the area flexible and transparent p of doping and the area flexible and transparent n of doping are included, In, the transparent negative electrode is located at the transparent flexible substrate, and the area flexible and transparent n of the doping is located at described transparent negative On electrode, the area flexible and transparent p of the doping is located on the area flexible and transparent n of the doping, the transparent positive electrode position On the area flexible and transparent p of the doping.The invention also discloses a kind of preparation methods of organic diode.The present invention is mentioned Organic diode of confession and preparation method thereof replaces traditional inorganic material using transparent organic material, at low cost, is guaranteeing On the basis of the fundamental characteristics for not changing traditional inorganic device, low in energy consumption, fast response time is not necessarily to high temperature work in preparation process Skill also as save preparation time on the basis of reducing energy consumption.
Bright east of instrument etc. discloses a kind of organic diode electrical storage device and method for being provided simultaneously with storage and rectification (CN104979473A), which increases by one layer of buffer layer between anode-medium bed boundary, and entire device is from top to bottom successively Be: metallic cathode, dielectric layer, anode buffer layer, ito anode substrate, the anode buffer layer of this structure had both had preferable exhausted Edge, while ITO can also be modified.Pass through measurement device electrical properties and relevant experimental data, it is possible to determine that this device is One is provided simultaneously with the stabilization organic diode electrical storage device of storage and rectification.It is an advantage of the invention that the organic diode Memory device has storage hysteresis and considerable rectifying effect simultaneously, has big on-off ratio commutating ratio, and apply and continue outside Preferable performance is also maintained after voltage, meanwhile, easily designed compared to same type device architecture, the invention yield is high, has pervasive Property, there is important research significance.
A Ji washes space etc. and discloses a kind of low threshold voltage organic diode (CN104409634A), and the low threshold voltage is organic Diode includes: lower electrode;The metal oxide intercalation being formed on lower electrode;It is formed on metal oxide intercalation Organic functional material layer;The organic material buffer layer being formed on organic functional material layer;And it is formed in organic material and delays Rush the top electrode on layer.The invention also discloses a kind of method for preparing low threshold voltage organic diode.Using the invention, The contact berrier of lower electrode and organic material layer is adjusted with metal oxide intercalation, to reach the threshold of adjustment organic diode The effect of threshold voltage significantly reduces the threshold voltage of organic diode.
In conclusion between two electrodes by organic functional thin film folder, constructing the electronic device of sandwich structure, being big The technology of preparing of most organic diodes, organic functional thin film decide the performance of organic diode, but organic diode is opened Hair is still in the stage of fumbling, needs constantly to accumulate knowledge and experience.The common recognition of those skilled in the art is, organic diode it is whole Stream is more related to the composition of organic functional thin film than not only, additionally depends on the structure of film, needs to cooperate with optimization organic functions thin The component and structure of film, to obtain the organic diode of high commutating ratio.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation methods of organic diode laminated film.
The preparation method of organic diode laminated film proposed by the present invention, the specific steps are as follows:
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30 ~ 50nm thickness is successively deposited in fiber cloth, (3- is chloro- by the N- of 30 ~ 50nm thickness 4- fluorophenyl) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 30 ~ 1- hydroxyl -2- methylol-the 5- two of (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide of 50nm thickness, 30 ~ 50nm thickness The aluminium of benzyloxy -4- pyridone, 100 ~ 150nm thickness, obtains organic diode laminated film.
Reference literature (Fudan Journal (natural science edition), 2005,44 (4): 597-600) function generator, number Oscillograph, universal meter measure the electrical property of device, measure organic diode laminated film commutating ratio be 6,210,000 ~ 6930000.
Organic diode laminated film prepared by the present invention has " carbon cloth/organic layer/metal " structure, wherein organic Layer is formed by four kinds of layer-by-layer vacuum depositions of organic material, if only using a kind of organic material prepares organic layer, the present invention is mentioned As a comparison for following 4 technical solutions:
(1) the 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, In 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30nm thickness, the aluminium of 100nm thickness are successively deposited on carbon cloth, obtains organic multiple Film is closed, the electrical property of device is measured with function generator, digital oscilloscope, universal meter, it is thin to measure organic composite The commutating ratio of film is 1, i.e. device does not have rectification characteristic.
(2) the 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3 Pa Under, N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- the amino-l, 3,4- thiadiazoles -2- of 50nm thickness are successively deposited on carbon cloth Sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 150nm thickness aluminium, organic compound film is obtained, with function generator, number Oscillograph, universal meter measure the electrical property of device, and the commutating ratio for measuring organic compound film is 1, i.e. device does not have There is rectification characteristic.
(3) the 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3 Pa Under, it is thick that (1- benzyl -4- neighbour pyridyl group -1,2,3-triazoles) nickelous bromide of 40nm thickness, 150nm are successively deposited on carbon cloth Aluminium obtains organic compound film, is measured, is measured to the electrical property of device with function generator, digital oscilloscope, universal meter The commutating ratio of organic compound film is 1, i.e. device does not have rectification characteristic.
(4) the 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3 Pa Under, two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5-, the 100nm that 30nm thickness is successively deposited on carbon cloth are thick Aluminium, obtain organic compound film, the electrical property of device measured with function generator, digital oscilloscope, universal meter, survey The commutating ratio for obtaining organic compound film is 1, i.e. device does not have rectification characteristic.
Four kinds of organic matters it can be seen from correlation technique scheme (1) ~ (4): 7,8- dihydroxy -3- (4 '-fluorophenyl) tonka-bean Element, N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride - 4- amine, (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, two benzyloxy -4- pyridine of 1- hydroxyl -2- methylol -5- Ketone, cannot be separately as the organic layer material of organic diode laminated film.
If four kinds of organic matters in the organic layer of the organic diode laminated film in the present invention lack one kind, the present invention Also provide following 4 technical solutions as a comparison:
(5) lack 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin in organic layer
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) third of 30nm thickness is successively deposited in fiber cloth Oxygroup] -6- methoxyquinazoline hydrochloride -4- amine, (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide of 40nm thickness, 50nm thickness Two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5-, 100nm thickness aluminium, obtain organic compound film, occurred with function Device, digital oscilloscope, universal meter measure the electrical property of device, and the commutating ratio for measuring organic compound film is 1, i.e. device Part does not have rectification characteristic.
(6) lack N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) third in organic layer Oxygroup] -6- methoxyquinazoline hydrochloride -4- amine
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 50nm thickness, (1- benzyl -4- neighbour's pyrrole of 40nm thickness are successively deposited in fiber cloth Piperidinyl -1,2,3- triazole) nickelous bromide, the two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5- of 30nm thickness, 100nm thickness Aluminium, obtain organic compound film, the electrical property of device measured with function generator, digital oscilloscope, universal meter, survey The commutating ratio for obtaining organic compound film is 1, i.e. device does not have rectification characteristic.
(7) lack (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide in organic layer
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 50nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 30nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 50nm thickness 1- hydroxyl The aluminium of two benzyloxy -4- pyridone of base -2- methylol -5-, 150nm thickness, obtains organic compound film, with function generator, number Word oscillograph, universal meter measure the electrical property of device, and the commutating ratio for measuring organic compound film is 1, i.e., device is not With rectification characteristic.
(8) lack two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5- in organic layer
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 40nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 40nm thickness (1- Benzyl -4- neighbour pyridyl group -1,2,3-triazoles) nickelous bromide, 150nm thickness aluminium, organic compound film is obtained, with function generator, number Word oscillograph, universal meter measure the electrical property of device, and the commutating ratio for measuring organic compound film is 1, i.e., device is not With rectification characteristic.
By above-mentioned correlation technique scheme (5) ~ (8) once it can be seen from a certain component missing in organic layer, then prepare The laminated film of " carbon cloth/organic layer/metal " structure does not have rectification effect.
If four kinds of organic matter vaporization platings sequence in the organic layer of the organic diode laminated film in the present invention is different, this Invention also provides following 3 technical solutions as a comparison:
(9) two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5- is first deposited
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon Two benzyloxy -4- the pyridone of 1- hydroxyl -2- methylol -5- of 50nm thickness, the 7,8- bis- of 30nm thickness are successively deposited in fiber cloth N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles-of hydroxyl -3- (4 '-fluorophenyl) cumarin, 50nm thickness 2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 30nm thickness (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) bromination The aluminium of nickel, 100nm thickness, obtains organic compound film, with function generator, digital oscilloscope, universal meter to the electrical property of device It measures, the commutating ratio for measuring organic compound film is 6.9, i.e. the rectification characteristic of device is weaker.
(10) (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide is first deposited
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide of 30nm thickness, the 1- hydroxyl-of 50nm thickness are successively deposited in fiber cloth Two benzyloxy -4- pyridone of 2- methylol -5-, 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30nm thickness, 50nm are thick N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride - The aluminium of 4- amine, 100nm thickness, obtains organic compound film, with function generator, digital oscilloscope, universal meter to the electrical property of device It can be carried out measurement, the commutating ratio for measuring organic compound film is 7.8, i.e. the rectification characteristic of device is weaker.
(11) N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group]-first is deposited 6- methoxyquinazoline hydrochloride -4- amine
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon N- (the chloro- 4- fluorophenyl of 3-) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) third of 50nm thickness is successively deposited in fiber cloth Oxygroup] -6- methoxyquinazoline hydrochloride -4- amine, (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide of 30nm thickness, 50nm thickness Two benzyloxy -4- pyridone of 1- hydroxyl -2- methylol -5-, 30nm thickness 7,8- dihydroxy -3- (4 '-fluorophenyl) tonka-bean The aluminium of element, 100nm thickness, obtains organic compound film, with function generator, digital oscilloscope, universal meter to the electrical property of device It measures, the commutating ratio for measuring organic compound film is 5.9, i.e. the rectification characteristic of device is weaker.
By above-mentioned correlation technique scheme (9) ~ (11) once it can be seen from organic layer membrane structure change, then make The commutating ratio of the laminated film of standby " carbon cloth/organic layer/metal " structure is only about the million of claim technical solution / mono-, rectification characteristic decline is significant.
In conclusion the beneficial effects of the present invention are: use 4 kinds itself not have commutating character material, by excellent Change component and device architecture, obtains the organic diode laminated film with high commutating ratio;Moreover, in organic layer if Lack a certain material for not having commutating character itself, then the laminated film of " carbon cloth/organic layer/metal " structure is whole Fluidity can disappear;If membrane structure changes, the commutating ratio of laminated film is only about the million of claim technical solution / mono-.
Therefore, the technical solution of the claims in the present invention has marked improvement outstanding, produces unexpected technology Effect, the creativeness with patent statute.
Specific embodiment
The present invention is further described below by example.
Embodiment 1
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 30nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 30nm thickness (1- Benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, 30nm thickness two benzyloxy -4- pyridine of 1- hydroxyl -2- methylol -5- The aluminium of ketone, 100nm thickness, obtains organic diode laminated film;With function generator, digital oscilloscope, universal meter to device Electrical property measures, and the commutating ratio for measuring organic diode laminated film is 6,930,000.
Embodiment 2
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 50nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 50nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 50nm thickness (1- Benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, 50nm thickness two benzyloxy -4- pyridine of 1- hydroxyl -2- methylol -5- The aluminium of ketone, 150nm thickness, obtains organic diode laminated film;With function generator, digital oscilloscope, universal meter to device Electrical property measures, and the commutating ratio for measuring organic diode laminated film is 6,210,000.
Embodiment 3
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 50nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 30nm thickness (1- Benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, 50nm thickness two benzyloxy -4- pyridine of 1- hydroxyl -2- methylol -5- The aluminium of ketone, 100nm thickness, obtains organic diode laminated film;With function generator, digital oscilloscope, universal meter to device Electrical property measures, and the commutating ratio for measuring organic diode laminated film is 6,660,000.
Embodiment 4
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 35nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 45nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 50nm thickness (1- Benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, 30nm thickness two benzyloxy -4- pyridine of 1- hydroxyl -2- methylol -5- The aluminium of ketone, 120nm thickness, obtains organic diode laminated film;With function generator, digital oscilloscope, universal meter to device Electrical property measures, and the commutating ratio for measuring organic diode laminated film is 6,760,000.
Embodiment 5
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 39nm thickness, N- (the chloro- 4- fluorobenzene of 3- of 35nm thickness are successively deposited in fiber cloth Base) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 42nm thickness (1- Benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, 48nm thickness two benzyloxy -4- pyridine of 1- hydroxyl -2- methylol -5- The aluminium of ketone, 132nm thickness, obtains organic diode laminated film;With function generator, digital oscilloscope, universal meter to device Electrical property measures, and the commutating ratio for measuring organic diode laminated film is 6,410,000.

Claims (1)

1. a kind of preparation method of organic diode laminated film, which is characterized in that specific step is as follows:
The 200 grammes per square metre carbon cloths of 5cm × 4cm are placed in vacuum coating equipment, are 2 × 10 in vacuum degree-3Under Pa, in carbon fiber 7,8- dihydroxy -3- (4 '-fluorophenyl) cumarin of 30 ~ 50nm thickness, N- (the chloro- 4- of 3- of 30 ~ 50nm thickness are successively deposited on Wei Bu Fluorophenyl) -7- [3- (5- amino-l, 3,4- thiadiazoles -2- sulfydryl) propoxyl group] -6- methoxyquinazoline hydrochloride -4- amine, 30 ~ 50nm 1- hydroxyl -2- methylol -5- hexichol the first of thick (1- benzyl -4- neighbour pyridyl group -1,2,3- triazole) nickelous bromide, 30 ~ 50nm thickness The aluminium of oxygroup -4- pyridone, 100 ~ 150nm thickness, obtains organic diode laminated film;
Wherein the performance of organic diode laminated film is that commutating ratio is 6,210,000 ~ 6,930,000.
CN201910720334.9A 2019-08-06 2019-08-06 A kind of preparation method of organic diode laminated film Pending CN110444667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910720334.9A CN110444667A (en) 2019-08-06 2019-08-06 A kind of preparation method of organic diode laminated film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910720334.9A CN110444667A (en) 2019-08-06 2019-08-06 A kind of preparation method of organic diode laminated film

Publications (1)

Publication Number Publication Date
CN110444667A true CN110444667A (en) 2019-11-12

Family

ID=68433392

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910720334.9A Pending CN110444667A (en) 2019-08-06 2019-08-06 A kind of preparation method of organic diode laminated film

Country Status (1)

Country Link
CN (1) CN110444667A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101574017A (en) * 2006-12-22 2009-11-04 默克专利有限公司 Phenanthroline compounds and electroluminescent devices using the same
KR20110001180A (en) * 2009-06-29 2011-01-06 엘지디스플레이 주식회사 Organic light emitting device and manufacturing method for thereof
CN102241891A (en) * 2010-05-14 2011-11-16 中国科学院理化技术研究所 Pyrazolopyridine coumarin dye derivative, and synthesis method and application thereof
CN105531262A (en) * 2013-09-09 2016-04-27 东曹株式会社 2-aminocarbazole compound and use thereof
CN105895830A (en) * 2016-04-27 2016-08-24 华南师范大学 Preparation method for ITO electrode of organic light emitting diode
CN107287570A (en) * 2017-06-19 2017-10-24 合肥市惠科精密模具有限公司 A kind of preparation method of AMOLED screens conductive oxide composite film material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101574017A (en) * 2006-12-22 2009-11-04 默克专利有限公司 Phenanthroline compounds and electroluminescent devices using the same
KR20110001180A (en) * 2009-06-29 2011-01-06 엘지디스플레이 주식회사 Organic light emitting device and manufacturing method for thereof
CN102241891A (en) * 2010-05-14 2011-11-16 中国科学院理化技术研究所 Pyrazolopyridine coumarin dye derivative, and synthesis method and application thereof
CN105531262A (en) * 2013-09-09 2016-04-27 东曹株式会社 2-aminocarbazole compound and use thereof
CN105895830A (en) * 2016-04-27 2016-08-24 华南师范大学 Preparation method for ITO electrode of organic light emitting diode
CN107287570A (en) * 2017-06-19 2017-10-24 合肥市惠科精密模具有限公司 A kind of preparation method of AMOLED screens conductive oxide composite film material

Similar Documents

Publication Publication Date Title
Ren et al. Properties of copper (fluoro-) phthalocyanine layers deposited on epitaxial graphene
Wang et al. Rational design of a high performance all solid state flexible micro-supercapacitor on paper
CN109580725A (en) Two-dimentional transient metal sulfide gas sensor and preparation based on antenna structure
Seguini et al. Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process
CN102983178B (en) Graphene optical detector and preparing method thereof
Matthey et al. Field-effect experiments in NdBa 2 Cu 3 O 7− δ ultrathin films using a SrTiO 3 single-crystal gate insulator
CN105789442B (en) A kind of thin film transistor (TFT), its production method and related device
CN107045945B (en) It is a kind of directly to grow nitrogen-doped carbon-cobalt compound microplate array super capacitor anode and preparation method thereof based on conductive substrates
Gupta et al. Morphology and porosity of nanoporous Au thin films formed by dealloying of AuxSi1− x
Xiang et al. Communication—Li/Li7La3Zr2O12 interfacial modification by constructing a layer of Cu-Li alloy
Kim et al. Substrate effect on the electrical properties of sputtered YSZ thin films for co-planar SOFC applications
CN109585489A (en) Flexible optoelectronic detector array and preparation method thereof
Nagata et al. Hard x-ray photoelectron spectroscopy study on band alignment at poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)/ZnO interface
Chen et al. Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory
Han et al. High Anti‐Jamming Flexible Capacitive Pressure Sensors Based on Core–Shell Structured AgNWs@ TiO2
CN110444667A (en) A kind of preparation method of organic diode laminated film
Liu et al. Three-dimensional supercapacitors composed of Ba0. 65Sr0. 35TiO3 (BST)/NiSi2/silicon microchannel plates
Moges et al. Performance improvement in 4H-SiC (0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature
Aroutiounian et al. Investigations of the Fe1. 99Ti0. 01O3–electrolyte interface
Machado et al. Chemical synthesis of La0. 75Sr0. 25CrO3 thin films for p-type transparent conducting electrodes
CN108051479A (en) It is a kind of to analyze the detection method for applying carbon foil interfacial conductive performance
CN208738252U (en) Dot structure and array substrate
Yu et al. Spatiotemporally Correlated Imaging of Interfacial Defects and Photocurrents in High Efficiency Triple‐Cation Mixed‐Halide Perovskites
Chen et al. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films
Zhu et al. Detection of charge density wave phase transitions at 1T-TaS2/GaAs interfaces

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20191112