CN110444636A - A kind of sintering furnace of circle temperature layout - Google Patents
A kind of sintering furnace of circle temperature layout Download PDFInfo
- Publication number
- CN110444636A CN110444636A CN201910772518.XA CN201910772518A CN110444636A CN 110444636 A CN110444636 A CN 110444636A CN 201910772518 A CN201910772518 A CN 201910772518A CN 110444636 A CN110444636 A CN 110444636A
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- section
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- warm area
- reason material
- cooling zone
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- 238000005245 sintering Methods 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 6
- 238000005265 energy consumption Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Tunnel Furnaces (AREA)
Abstract
The invention discloses a kind of sintering furnaces of round temperature layout, which is characterized in that including reason material section, bringing-up section, cooling zone and charging driving equipment；Reason material section, bringing-up section and cooling zone are circumferentially distributed, and circumference initial position is reason material section, and circumferentially feedstock direction is followed successively by bringing-up section and cooling zone；Bringing-up section includes warm area and thermal insulation areas, and warm area and thermal insulation areas are circumferentially alternately distributed；Charging driving equipment driving material successively by reason material section, bringing-up section, cooling zone and is eventually returned to reason material section.The present invention sets warm area to space individually is added, and can substantially reduce the volume of single warm area, greatly reduces the volume of equipment.It is transmitted using mechanical arm, and by warm area independence, between each other almost without influence, the heating-up time is short, and cooling rate is fast.
Description
Technical field
The present invention relates to a kind of sintering furnaces of round temperature layout, are especially applied to the production of crystal-silicon solar cell,
Belong to photovoltaic technology field.
Background technique
Solar cell sintering technology is the key technology in crystal-silicon solar cell manufacturing process, and principle is using infrared
The Al-back-surface-field (BSF) paste of the silver electrode paste for being printed on solar battery surface and the back side is carried out high temperature sintering by heating technique, is generated good
Good Ohmic contact, since the film layer of silver electrode and Al-BSF is relatively thin, so the sintering velocity to sintering temperature is all very sensitive.
Since printing, sintering process have negative impact to the photoelectric conversion efficiency of solar cell, so printing, drying and sintering process
It is horizontal lower, it will greatly affect the practical transfer efficiency of solar cell power output.So to the steady of temperature in sintering process
Qualitative, heating, cooling rate has great requirement.
Existing solar cell sintering process generally uses chain-type sintering furnace, chain-type sintering furnace generally point-blank needle
Several warm areas, including baking zone, pre-burning interface, sintering zone, cooling zone etc. are arranged to different functions, use the net of nichrome
Band is transmitted, and cell piece is entered from feed inlet, by cooling after different warm areas, finally from discharge port taking-up.
Existing chain-type sintering furnace volume is too long, main reason is that chain-type sintering furnace technical process is a linear type, nothing
Method reuses a warm area and reaches identical effect, during battery advances, needs in some warm area residence time
Length ratio can only be determined by warm area length.So must just lengthen warm area to guarantee sintering and drying effect, make existing
Some sintering furnaces need nearly tens of meters of length.
Existing chain-type sintering furnace temperature curve is excessively gentle, and the heating-up time is long, and cooling rate is slow, in solar cell metal
During change, it is unfavorable for forming good Ohmic contact, it is a lasting process, In that reason, which essentially consists in chain-type sintering furnace,
Leaving a warm area and reaching another warm area is a continuous process, causes temperature curve excessively gentle, cannot be formed good
Depth-width ratio.
Existing tradition chain-type sintering furnace power consumption is larger, main reason is that setting warm area is longer, fluorescent tube power consumption is larger, by
This mating pressure of bring factory service further increases, and cooling zone by high-temperature region due to being influenced, to keep low temperature, so that energy consumption
Increase.
Existing chain-type sintering furnace, temperature-controlled precision are bad.Reason is the needs transmitted due to furnace zone, warm area and warm area it
Between lattice gear gap it is larger, interfered with each other between warm area, due to the influence of internal gas flow, high-temperature region can be to low temperature block transitive heat
Amount, so that high-temperature region temperature reduces, low-temperature space temperature is increased, and to reach temperature controlled precision, it is bigger to would have to consumption
Energy keeps the temperature difference between warm area, to further increase energy consumption.
Existing sintering furnace due to designing, feed inlet with discharge port each one, need one end to be put into cell piece, one
Cell piece is taken out at end, and whether automation or manpower take cell piece, can all increase additional cost.
Summary of the invention
The technical problem to be solved by the present invention is to how improve solar cell sintering efficiency, and reduce cost.
In order to solve the above-mentioned technical problem, the technical solution of the present invention is to provide a kind of sintering of round temperature layout
Furnace, which is characterized in that including reason material section, bringing-up section, cooling zone and charging driving equipment；Reason material section, bringing-up section and cooling zone are in
Circle distribution, circumference initial position are reason material section, and circumferentially feedstock direction is followed successively by bringing-up section and cooling zone；Bringing-up section includes adding
Hot-zone and thermal insulation areas, heating zone and thermal insulation areas are circumferentially alternately distributed；Driving equipment driving material is fed by reason material section, heating
Section, cooling zone are simultaneously eventually returned to reason material section；Thermal insulation areas is equipped with the gap for allowing material to pass through.
Preferably, the heating zone quantity is at least 2.
Preferably, the charging driving equipment is rotating mechanical arm, and rotary shaft is set to circle center.
Preferably, the charging driving equipment is roller bearing.
The present invention is set individual heating zone for warm area, can be substantially reduced single warm area using mechanical arm transmission mode
Volume, greatly reduce equipment volume.Transmitted using rotating mechanical arm, and by heating zone independence, between each other almost without
It influences, the heating-up time is short, and cooling rate is fast.The present invention reduces the volume of warm area, and energy consumption can be greatly reduced.Each warm area is only
It stands, heat-barrier material of the centre using bigger thickness, smaller transmission gap, almost without influence between warm area, makes temperature control more
It is accurate.The present invention is the design of round sintering furnace, and charging discharge port can be made to be combined into one, substantially reduce cost.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the sintering furnace of the round temperature layout provided in the present embodiment.
Specific embodiment
In order to make the present invention more obvious and understandable, hereby with preferred embodiment, and attached drawing is cooperated to be described in detail below.
Embodiment 1
As shown in Figure 1, heating zone 1,3,5,7,9 and thermal insulation areas 2,4,6,8,10 are alternately arranged, thermal insulation areas 2,4,6,8,10
Using thermal baffle, further include cooling zone 11, battery supporting plate 12, can 360 degree rotation rotating mechanical arm 13.This sintering furnace is set
For meter using round temperature layout, each heating zone 1,3,5,7,9 all can serve as an independent warm area.In resonable material section, electricity
Placing battery on pond supporting plate 12, after by rotating mechanical arm 13 drive enter any warm area, carry out related process, all independent
In warm area, drying, pre-sintering, sintering warm area can be arbitrarily set, after finally entering the cooling of cooling zone 11, return to reason material section, it is heat-insulated
Baffle has slit opening, to guarantee that rotating mechanical arm 13 can arbitrarily pass through.
Warm area is separated into independent design, heat-barrier material is added in centre, mutual interference can be substantially reduced, it can be achieved that
The temperature control of higher precision, the residence time that the transmission of rotating mechanical arm 13 can be arbitrarily arranged in each warm area, and can be in pole
Next warm area is reached in short time so that heating rate of temperature fall increases, due to rotating mechanical arm 13 can 360 degree rotation, can
Enter any warm area at any time, using in technique above can provide more selections.
Embodiment 2
The transmission of cell piece can also be used roller type to transmit in the warm area of circular distribution, by controlling stopping for different roller bearings
Turn the time to control its residence time in warm area, remaining is same as Example 1.
The present invention, is transmitted or roller type mode using rotating mechanical arm 13, sets independent for heating zone 1,3,5,7,9
Warm area, the volume of single warm area can be substantially reduced, greatly reduce equipment volume.Use rotating mechanical arm 13 or roller type
Transmission.Independent between warm area, between each other almost without influence, the heating-up time is short, and cooling rate is fast.
Present design reduces the volume of warm area, and energy consumption can be greatly reduced.Each warm area is independent, and centre is using more
The heat-barrier material of big thickness, smaller transmission gap keep temperature control more accurate almost without influence between warm area.
The design is the design of round sintering furnace, and charging discharge port can be made to be combined into one, substantially reduce cost.
Claims (4)
1. a kind of sintering furnace of circle temperature layout, which is characterized in that including reason material section, bringing-up section, cooling zone (11) and charging
Driving equipment；Reason material section, bringing-up section and cooling zone are circumferentially distributed, and circumference initial position is reason material section, circumferentially feedstock direction
It is followed successively by bringing-up section and cooling zone (11)；Bringing-up section includes heating zone (1；3；5；7；And thermal insulation areas (2 9)；4；6；8；10) it, heats
Area (1；3；5；7；And thermal insulation areas (2 9)；4；6；8；10) it is circumferentially alternately distributed；Driving equipment driving material is fed by reason material
Section, bringing-up section, cooling zone (11) are simultaneously eventually returned to reason material section；Thermal insulation areas (2；4；6；8；10) it is equipped between allowing material to pass through
Gap.
2. a kind of sintering furnace of round temperature layout as described in claim 1, which is characterized in that the heating zone (1；3；
5；7；9) quantity is at least 2.
3. a kind of sintering furnace of round temperature layout as described in claim 1, which is characterized in that the charging driving equipment
For rotating mechanical arm (13), rotary shaft is set to circle center.
4. a kind of sintering furnace of round temperature layout as described in claim 1, which is characterized in that the charging driving equipment
For roller bearing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910772518.XA CN110444636A (en) | 2019-08-21 | 2019-08-21 | A kind of sintering furnace of circle temperature layout |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910772518.XA CN110444636A (en) | 2019-08-21 | 2019-08-21 | A kind of sintering furnace of circle temperature layout |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110444636A true CN110444636A (en) | 2019-11-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910772518.XA Pending CN110444636A (en) | 2019-08-21 | 2019-08-21 | A kind of sintering furnace of circle temperature layout |
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| Country | Link |
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| CN (1) | CN110444636A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103357981A (en) * | 2012-03-26 | 2013-10-23 | 武汉飞恩微电子有限公司 | Rotation type reflow soldering furnace and soldering method thereof |
| CN104810309A (en) * | 2015-04-25 | 2015-07-29 | 北京金晟阳光科技有限公司 | Roller way type solar cell sintering and radiation annealing integrated continuous furnace |
| CN106288772A (en) * | 2016-10-07 | 2017-01-04 | 苏州南北深科智能科技有限公司 | A kind of sintering furnace for photovoltaic solar cell silicon chip |
-
2019
- 2019-08-21 CN CN201910772518.XA patent/CN110444636A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103357981A (en) * | 2012-03-26 | 2013-10-23 | 武汉飞恩微电子有限公司 | Rotation type reflow soldering furnace and soldering method thereof |
| CN104810309A (en) * | 2015-04-25 | 2015-07-29 | 北京金晟阳光科技有限公司 | Roller way type solar cell sintering and radiation annealing integrated continuous furnace |
| CN106288772A (en) * | 2016-10-07 | 2017-01-04 | 苏州南北深科智能科技有限公司 | A kind of sintering furnace for photovoltaic solar cell silicon chip |
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Application publication date: 20191112 |