CN110441971A - One kind being superimposed full thin film solid state electrochromic device based on more piece - Google Patents
One kind being superimposed full thin film solid state electrochromic device based on more piece Download PDFInfo
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- CN110441971A CN110441971A CN201910608978.9A CN201910608978A CN110441971A CN 110441971 A CN110441971 A CN 110441971A CN 201910608978 A CN201910608978 A CN 201910608978A CN 110441971 A CN110441971 A CN 110441971A
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- thin film
- solid state
- electrochromic device
- film solid
- electrode layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/1533—Constructional details structural features not otherwise provided for
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
Abstract
The present invention relates to one kind to be superimposed full thin film solid state electrochromic device based on more piece, it includes substrate, the lower conductive electrode layer being set on the substrate, the upper conductive electrode layer being set on the lower conductive electrode layer, and more than two full thin film solid state electrochromic device units of single-unit, the full thin film solid state electrochromic device unit of single-unit is arranged between the lower conductive electrode layer and the upper conductive electrode layer, and the full thin film solid state electrochromic cells stacked series setting of single-unit, wherein intermediate conductive electrode layer is provided between the full thin film solid state electrochromic cells of the adjacent single-unit.The electrochromic device has high voltage carrying capacity, high light modulation ability, realizes the excellent performance such as high storage capacitance, high density.The capacitor can intelligent window, anti-dazzle reflective mirror, full solid thin film capacitor and in terms of have a wide range of applications.
Description
Technical field
The present invention relates to functional material and device arts, and in particular to one kind is superimposed full thin film solid state electricity based on more piece
Mutagens color device.
Background technique
Glass window and glass curtain wall have become the important component and construction style of modern architecture, at the same it also at
For the channel of energy transmission (mainly visible light and infrared light).The energy consumption situation of building can be with the four seasons and daily sunshine
Difference and change, when to can change its bright-dark degree logical to control light for integrated glass window and glass curtain wall under construction
When amount, the use of the energy on the one hand can be greatlyd save in this way, and the functionalization effect that building on the other hand also may be implemented is (such as hidden
Private and design for aesthetic etc.).And intelligent window (Smart window) just meets these demands, wherein being integrated with electrochromism
The window of device (Electrochromic device, ECD) is one of intelligent window, it passes through the transmission of foreign current
To control the valence state and energy level shape that insertion or abjection of the inner ion inside electrochromic material change material internal element
State is to realize the adjusting of light.In addition, itself also has capacitor function simultaneously from the point of view of the principle that electrochromic device works
It can act on, electric energy can be provided for other active devices.Therefore, electrochromic device itself has both electrochromism simultaneously and electric energy is deposited
Store up function.
Electrochromic device (capacitor) includes mainly full stress-strain electrochromic device and full-inorganic electrochromic device
And organic-inorganic mixing electrochromic device.Three kinds of electrochromic devices can be divided into full thin film solid state electricity by device architecture division
Mutagens color device, double-face electrode layer (including electrochromic layer or ion storage) pass through layer with intermediate polymer electrolyte layer
Sandwich electrochromic structure, double-face electrode layer (comprising electrochromic layer or ion storage) and the liquid for pressing technique to constitute
The electrochromic structure that polymer dielectric is constituted, and preceding two classes electrochromic device structure is classified as solid-state electrochromic device
Part.
Relative to the electrochromic device (capacitor) of other forms, the full thin film solid state electrochromism device of full-inorganic material
Part (All thin film solid-state ECD, abbreviation ATF-ECD) has for example higher uvioresistant spoke of its unique advantage
Penetrate ability, high-temperature stability, light weight, without sealing, bubble-free, it is safer, online large area film deposition and device can be achieved
Part is integrated etc., has bigger development potentiality and application prospect.Currently, the full thin film solid state electrochromic device of full-inorganic material
Structure is the structure being sequentially overlapped based at least 5 layer function films.And the structure that at least 5 layer function films are sequentially overlapped relative to
The contents of the present invention, substantially a kind of single-unit structure, the full-inorganic that the structure that this 5 layer function film is sequentially overlapped is constituted are entirely thin
Film solid-state electrochromic device has lower voltage tolerance, relatively narrow light modulation ability, lower capacitor.And realize high electricity
Pressing the electrochromic device structure of ability to bear, bloom modulation capability, high storage capacitance becomes particularly significant, in the following smart window
Family, all solid state capacitor, photoelectric sensor etc. have more broad application prospect.
Summary of the invention
For the technical problems in the prior art, primary and foremost purpose of the invention is to provide a kind of based on stacked complete thin
The capacitor of film solid-state electrochromic, the capacitor can be realized it is high bear voltage, bloom modulation capability, high storage capacitance energy
Power.
Based on above-mentioned purpose, the present invention is at least provided the following technical solutions:
One kind being superimposed full thin film solid state electrochromic device based on more piece comprising:
Lower conductive electrode layer,
Upper conductive electrode layer, and
More than two full thin film solid state electrochromic device units of single-unit, the full thin film solid state electrochromism device of single-unit
Part unit is arranged between the lower conductive electrode layer and the upper conductive electrode layer, and the electroluminescent change of the full thin film solid state of the single-unit
The stacking of color device unit is arranged in series,
Wherein, intermediate conductive electrode is provided between the full thin film solid state electrochromic device unit of the adjacent single-unit
Layer, it is described that full thin film solid state electrochromic device is superimposed with capacitor function based on more piece.
Further, the full thin film solid state electrochromic device unit of the single-unit includes the ion storage being cascading
Layer, solid-state electrolyte layer and electrochromic layer.
Further, the conductive electrode layer adjacent with the ion storage, the conduction adjacent with the electrochromic layer
Electrode layer and the full thin film solid state electrochromic device unit of the single-unit constitute the full thin film solid state electrochromic device of single-unit.
Further, the ion storage is metal oxides inorganic film material with function, and the metal oxide is
Including at least a kind of oxide of transition metal.
Further, the solid-state electrolyte layer be by the transition metal oxide film material of proton transport or comprising
There are the inorganic salts of Li, Na or K ion etc..
Further, the electrochromic layer is transition metal oxide inorganic functional thin-film material, transiting metal oxidation
Object is the oxide including at least a kind of transition metal.
Further, the upper conductive electrode layer, the lower conductive electrode layer and the intermediate conductive electrode layer are gold
Belong to the multilayer electrode that electrode, transparent conductive oxide electrode or metal/transparent conductive oxide are constituted.
Further, between the full thin film solid state electrochromic device unit of each single-unit, the material of the ion storage
Material can be identical or different, and the material of the solid-state electrolyte layer can be identical or different, and the material of the electrochromic layer can
With identical or different.
Further, further comprising:
Substrate, is arranged in the surface of the lower conductive electrode layer, which leads with being equipped under the ion storage
The surface of electric electrode layer is opposite.
One kind being superimposed full thin film solid state electrochromic device based on more piece, described electroluminescent based on the full thin film solid state of more piece superposition
Electrochromic device is above-mentioned based on the full thin film solid state electrochromic device of more piece superposition, described to be superimposed full thin film solid state electricity based on more piece
Mutagens color device is applied to window, reflective mirror or photoelectric sensor.
Compared with prior art, the present invention at least has the following beneficial effects:
Of the invention contains at least two the full thin film solid state of single-unit based on the full thin film solid state electrochromic device of more piece superposition
Electrochromic device, and it is real by sharing intermediate conductive electrode layer between the adjacent full thin film solid state electrochromic device of single-unit
The series connection of the existing adjacent full thin film solid state electrochromic device of single-unit, while the electrochromic device has capacitor function, from
And the voltage carrying capacity of the electrochromic device is improved, light modulation ability is improved, high storage capacitance, high density are realized
Etc. excellent performance.The electrochromic device can be in intelligent window, anti-dazzle reflective mirror, full solid thin film capacitor and photoelectricity
It is had a wide range of applications in terms of sensor.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that full thin film solid state electrochromic device is superimposed based on more piece of the embodiment of the present invention.
Specific embodiment
It is next below that the present invention will be further described in detail.
Fig. 1 is the specific embodiment of the invention based on the full thin film solid state electrochromic device structural representation of more piece superposition
Scheme, in the embodiment, using the full thin film solid state electrochromic device series connection of two sections as example.As shown, more piece should be based on
Full thin film solid state electrochromic device is superimposed to include substrate 100, the lower conductive electrode layer 102 being set on substrate 100, be set to
The first ion storage 103 on lower conductive electrode layer 102, the first solid state electrolysis being laminated in the first ion storage 103
Matter layer 104 and the first electrochromic layer 105 being laminated in the first solid-state electrolyte layer 104 are set to the first electrochromism
Layer 105 on intermediate conductive electrode layer 106, stack gradually on intermediate conductive electrode layer 106 the second ion storage 107,
Second solid-state electrolyte layer 108 and the second electrochromic layer 109, the upper conductive electricity being set on the second electrochromic layer 109
Pole layer 110.
Wherein, the first ion storage 103, the first solid-state electrolyte layer 104 and the first electrochromic layer 105 constitute the
The full thin film solid state electrochromic device unit of 1 single-unit, leads under adjacent with the full thin film solid state electrochromic device unit of the 1st single-unit
It is single that electric electrode layer 102 and the full thin film solid state electrochromic device unit of 106 and the 1st single-unit of intermediate conductive electrode layer constitute the 1st
Save full thin film solid state electrochromic device.
Second ion storage 107, the second solid-state electrolyte layer 108 and the second electrochromic layer 109 constitute the 2nd single-unit
Full thin film solid state electrochromic device unit, adjacent with the full thin film solid state electrochromic device unit of the 2nd single-unit is intermediate conductive
Electrode layer 106 and upper conductive electrode layer 110 and the 2nd single-unit the 2nd single-unit of full thin film solid state electrochromic device unit composition are complete
Thin film solid state electrochromic device.
Between the full thin film solid state electrochromic device of 1st single-unit and the full thin film solid state electrochromic device of the 2nd single-unit altogether
With intermediate conductive electrode layer 106, connect to constitute the full thin film solid state electrochromic device of two single-units, the concatenated electroluminescent change
Color device has capacitor function simultaneously.
First ion storage 103 and the second ion storage 107 can be metal oxides inorganic function film material
Material, metal oxide include the oxide of at least one transition metal.
First electrochromic layer 105 and the second electrochromic layer 109 are transition metal oxide inorganic functional film material
Material, transition metal oxide include the oxide of at least one transition metal.
First solid-state electrolyte layer 104 and the second solid-state electrolyte layer 108 are the oxo transition metal by proton transport
Compound thin-film material or include Li, Na or K ion etc. inorganic salts.Preferably, the first solid-state electrolyte layer 104 and second
Solid-state electrolyte layer 108 is Ta2O5Or LiTaO3Or LiNbO3。
Lower conductive electrode layer 102, upper conductive electrode layer and intermediate conductive electrode layer include but are not limited only to any form
Single metal or alloy electrode, transparent conductive oxide electrode or metal/transparent conductive oxide constitute multilayer electrode.
In this embodiment, substrate 101 selects glass substrate, and lower conductive electrode layer 102 selects transparent conductive oxide
ITO, using the non-reactive magnetron sputtering method of the radio frequency ito thin film that deposition thickness is about 150nm on the glass substrate, then using straight
Stream reaction magnetocontrol sputtering method is sequentially depositing the nickel oxide film with a thickness of 200nm as the first ion storage on ito thin film
Layer 103, deposition thickness is the tantalum oxide films of 350nm as the first solid-state electrolyte layer 104, in the first solid-state electrolyte layer
Deposition thickness is the tungsten oxide film of 300nm thickness as the first electrochromic layer 105 on 104, is then proceeded to non-anti-using radio frequency
Answer the magnetron sputtering method ito thin film that deposition thickness is about 150nm on the first electrochromic layer 105 as intermediate conductive electrode layer
106.Lower conductive electrode layer 102, the first ion storage 103, the first solid-state electrolyte layer 104, the first electrochromic layer 105 with
And intermediate conductive electrode layer 106 constitutes the complete full thin film solid state electrochromic device of Section 1 light-transmission type.
Using intermediate conductive electrode layer 106 as the conductive electrode layer of the full thin film solid state electrochromic device of Section 2 light-transmission type,
Second ion storage 107, the second solid-state are sequentially depositing again with identical technique on conductive electrode layer 106 among this
Electrolyte layer 108, the second electrochromic layer 109 and upper conductive electrode layer 110, so that it is solid to complete the full film of Section 2 light-transmission type
State electrochromic device, the full thin film solid state electrochromic device of Section 1 light-transmission type and the electroluminescent change of the full thin film solid state of Section 2 light-transmission type
Color device shares intermediate conductive electrode layer, to realize the string of two identical full thin film solid state electrochromic devices
Connection forms the full thin film solid state electrochromic device structure of two sections superposition.
In other embodiments, the second electrochromic layer 109 of the full thin film solid state electrochromic device of Section 2 selects oxidation
Molybdenum film substitutes above-mentioned tungsten oxide film, which is prepared using direct current reaction magnetron sputtering method, other each layer works
Skill and material property are identical, ultimately form the different full thin film solid state electrochromic device of two sections and share a conductive electricity
It connects to form the folded full thin film solid state electrochromic device structure of two ganglionic layers in pole.
In other embodiments, other than electrochromic layer can be for different materials, other corresponding each functional materials, such as
Ion storage, solid-state electrolyte layer and conductive electrode layer can be different.It is solid that more piece of the invention is superimposed full film
State electrochromic device can be sequentially depositing by each function film of identical or different two sections or more piece device and be superimposed reality
Existing, two adjacent section devices realize the series connection inside lamination device by public conductive electrode.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. one kind is superimposed full thin film solid state electrochromic device based on more piece, characterized in that it comprises:
Lower conductive electrode layer,
Upper conductive electrode layer, and
More than two full thin film solid state electrochromic device units of single-unit, the full thin film solid state electrochromic device list of single-unit
Member is arranged between the lower conductive electrode layer and the upper conductive electrode layer, and the full thin film solid state electrochromism device of the single-unit
The stacking of part unit is arranged in series,
Wherein, intermediate conductive electrode layer, institute are provided between the full thin film solid state electrochromic device unit of the adjacent single-unit
It states and full thin film solid state electrochromic device is superimposed with capacitor function based on more piece.
2. according to claim 1 described based on the full thin film solid state electrochromic device of more piece superposition, which is characterized in that the list
Saving full thin film solid state electrochromic device unit includes the ion storage being cascading, solid-state electrolyte layer and electroluminescent
Photochromic layer.
Described full thin film solid state electrochromic device is superimposed based on more piece 3. according to claim 2, which is characterized in that with it is described
The adjacent conductive electrode layer of ion storage, the conductive electrode layer adjacent with the electrochromic layer and the full film of the single-unit
Solid-state electrochromic device cell constitutes the full thin film solid state electrochromic device of single-unit.
4. being superimposed full thin film solid state electrochromic device based on more piece according to Claims 2 or 3, which is characterized in that institute
Stating ion storage is metal oxides inorganic film material with function, and the metal oxide is including at least a kind of transition metal
Oxide.
5. being superimposed full thin film solid state electrochromic device based on more piece according to Claims 2 or 3, which is characterized in that institute
Solid-state electrolyte layer is stated to be the transition metal oxide film material by proton transport or include Li, Na or K ion etc.
Inorganic salts.
6. being superimposed full thin film solid state electrochromic device based on more piece according to Claims 2 or 3, which is characterized in that institute
Stating electrochromic layer is transition metal oxide inorganic functional thin-film material, and transition metal oxide is including at least a kind of transition
The oxide of metal.
7. according to claim 1 described based on the full thin film solid state electrochromic device of more piece superposition, which is characterized in that on described
Conductive electrode layer, the lower conductive electrode layer and the intermediate conductive electrode layer are metal electrode, transparent conductive oxide electricity
The multilayer electrode that pole or metal/transparent conductive oxide are constituted.
8. being superimposed full thin film solid state electrochromic device based on more piece according to Claims 2 or 3, which is characterized in that each
Between the full thin film solid state electrochromic device unit of single-unit, the material of the ion storage can be identical or different, institute
The material for stating solid-state electrolyte layer can be identical or different, and the material of the electrochromic layer can be identical or different.
Described full thin film solid state electrochromic device is superimposed based on more piece 9. according to claim 1, which is characterized in that it is into one
Step includes:
The surface of the lower conductive electrode layer, the surface and the lower conductive electricity for being equipped with the ion storage is arranged in substrate
The surface of pole layer is opposite.
10. one kind is superimposed full thin film solid state electrochromic device based on more piece, which is characterized in that described complete thin based on more piece superposition
Film solid-state electrochromic device is that the described of one of the claims 1-9 is superimposed full thin film solid state electrochromism device based on more piece
Part, it is described that full thin film solid state electrochromic device is superimposed applied to window, reflective mirror or photoelectric sensor based on more piece.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910608978.9A CN110441971A (en) | 2019-07-08 | 2019-07-08 | One kind being superimposed full thin film solid state electrochromic device based on more piece |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910608978.9A CN110441971A (en) | 2019-07-08 | 2019-07-08 | One kind being superimposed full thin film solid state electrochromic device based on more piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115903322A (en) * | 2022-10-18 | 2023-04-04 | 北京航空材料研究院股份有限公司 | Electrochromic device and preparation method thereof |
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| US5274493A (en) * | 1989-07-13 | 1993-12-28 | Elf Atochem North America, Inc. | Electrochromic element, materials for use in such element, processes for making such element and such materials and use of such element in an electrochromic glass device |
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| CN108169975A (en) * | 2017-12-14 | 2018-06-15 | 江苏晟泰高新材料有限公司 | A kind of integrated electrochromic and the device and its laser processing of Electric double-layer capacitor structure |
| CN108983525A (en) * | 2018-08-14 | 2018-12-11 | Oppo广东移动通信有限公司 | Electrochromic window assemblies and electronic equipment |
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| US4712879A (en) * | 1986-04-02 | 1987-12-15 | Donnelly Corporation | Electrochromic mirror |
| US5274493A (en) * | 1989-07-13 | 1993-12-28 | Elf Atochem North America, Inc. | Electrochromic element, materials for use in such element, processes for making such element and such materials and use of such element in an electrochromic glass device |
| CN107093517A (en) * | 2016-12-22 | 2017-08-25 | 中国工程物理研究院应用电子学研究所 | A kind of small-sized hundred kilovolts of high-voltage pulse capacitors of repetition rate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115903322A (en) * | 2022-10-18 | 2023-04-04 | 北京航空材料研究院股份有限公司 | Electrochromic device and preparation method thereof |
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Application publication date: 20191112 |