CN110429196A - The preparation method and display device of display device, display device - Google Patents
The preparation method and display device of display device, display device Download PDFInfo
- Publication number
- CN110429196A CN110429196A CN201811086927.6A CN201811086927A CN110429196A CN 110429196 A CN110429196 A CN 110429196A CN 201811086927 A CN201811086927 A CN 201811086927A CN 110429196 A CN110429196 A CN 110429196A
- Authority
- CN
- China
- Prior art keywords
- scattering
- display device
- layer
- pixel
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to the preparation methods and display device of a kind of display device, display device.Display device includes: tft array substrate；Luminescent layer is set on the tft array substrate, and the luminescent layer includes multiple pixel units；Scattering layer is set between the tft array substrate and the luminescent layer, and the scattering layer includes light blocking divider wall and multiple scattering units for being separated by the light blocking divider wall, and the position of the scattering unit and the pixel unit is arranged in a one-to-one correspondence.The display device adds the scattering layer with the one-to-one scattering unit of luminescent layer pixel unit between substrate and luminescent layer, can prevent the light loss of waveguide mode, improves light extraction efficiency；Simultaneously, light blocking divider wall can prevent between adjacent pixel unit because of crosstalk caused by scattering light, avoid blurring phenomenon, scattering layer can also improvement factor pixel arrangement unevenly caused by image quality loss, reach and improve the display effect of high resolution display, so as to meet high-resolution requirement.
Description
Technical field
The present invention relates to display technology field, the preparation more particularly to a kind of display device, display device shows dress
It sets.
Background technique
It is some to come into being for the high-resolution technology of realization as the demand to high-resolution display is continuously improved.Especially
It is in the case that the equipment and production technology itself that colour element generates are limited there are some scale, in order to realize high-resolution
Smaller Pixel Dimensions needed for rate generally require to explore the resolution ratio limitation for how breaking through equipment and technique.Such as it is printing
In brush display technology, the ink drop size of ink jet printing device common at present can not infinitely reduce.Correspondingly, print pixel
Just could can only accurately it be printed more than certain size.And the current apparatus and process limit will be often difficult to meet for future
Need the requirement of higher resolution, such as high-resolution 4K × 2K and 8K × 4K.
Summary of the invention
Based on this, it is necessary to provide a kind of display device, be able to ascend the display effect of high resolution display, thus full
The high-resolution requirement of foot.
A kind of display device, comprising:
Tft array substrate；
Luminescent layer is set on the tft array substrate, and the luminescent layer includes multiple pixel units；
Scattering layer, be set between the tft array substrate and the luminescent layer, the scattering layer include light blocking divider wall and
The position of the multiple scattering units separated by the light blocking divider wall, the scattering unit and the pixel unit corresponds and sets
It sets.
Each scattering unit is surrounded with the light blocking divider wall in one of the embodiments,.
The display device further includes being set between the scattering layer and the luminescent layer in one of the embodiments,
Flatness layer, the light blocking divider wall are also embedded in the flatness layer.
In one of the embodiments, the flatness layer with a thickness of 0.1 μm~20 μm, the light blocking divider wall is at least embedding
Enter to the 3/4 of the flatness layer.
The scattering unit includes at least the different village the Liang Zhong material of refractive index in one of the embodiments, described two
The specific refractivity of material is greater than the 15% of any a kind of refractive index of material.
In one of the embodiments, in described two materials, the refractive index of one of material is less than or equal to 1.5, separately
A kind of refractive index of material is more than or equal to 1.9.
The raw material for preparing of the light blocking divider wall includes photosensitive resin and black dyes in one of the embodiments,.
In one of the embodiments, the scattering unit with a thickness of 100nm~100 μm.
Another object of the present invention is to provide a kind of preparation method of display device, comprising:
Tft array substrate is provided；
In forming scattering layer on the tft array substrate, the scattering layer include light blocking divider wall and by the light blocking every
The multiple scattering units separated from wall；
In forming luminescent layer on the scattering layer, the luminescent layer includes multiple pixel units, and the pixel unit and
The position of the scattering unit is arranged in a one-to-one correspondence.
Yet another object of that present invention is to provide a kind of display device, including aforementioned display device part or the above-mentioned preparation side of use
The display device that method is prepared.
Aforementioned display device part of the present invention has and luminescent layer picture by adding between the substrate and luminescent layer of display device
The scattering layer of the plain one-to-one scattering unit of unit improves to prevent the light loss of waveguide (waveguide) mode
Light extraction efficiency；Be spaced apart simultaneously as the scattering unit of scattering layer is isolated wall, can prevent between different pixels unit because
Crosstalk caused by light is scattered, blurring phenomenon is avoided；Further, due to the scattering process of scattering unit, same pixel list
The light-out effect of sub-pixel more levels off to the illumination effect of whole pixel unit in member, so as to improve because of arrangement of subpixels unevenness
The loss of image quality caused by even, improves the display effect of high resolution display, so so as to meet high-resolution requirement.
Detailed description of the invention
Fig. 1 is the schematic diagram of an embodiment of the present invention display device luminescent layer pixel arrangement；
Fig. 2 is the structural schematic diagram of an embodiment of the present invention display device；
Fig. 3 is the scattering layer schematic diagram of 1 display device luminescent layer pixel arrangement of an embodiment of the present invention corresponding diagram distribution；
Fig. 4 is the display renderings that an embodiment of the present invention display device is located at the green sub-pixel for emitting light on oblique line.
Specific embodiment
To facilitate the understanding of the present invention, below will to invention is more fully described, and give it is of the invention compared with
Good embodiment.But the invention can be realized in many different forms, however it is not limited to embodiment described herein.Phase
Instead, purpose of providing these embodiments is makes the disclosure of the present invention more thorough and comprehensive.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
The resolution ratio of OLED display screen and the arrangement of pixel, which have, directly to be contacted, and by Rational Arrangement RGB sub-pixel, is allowed
Each pixel unit has three sub-pixels of red, green, blue, realizes preferable colorization effect, while allowing the sub-pixel of same color
It is adjacent, so as to realize its vapor deposition with the mask of larger open low resolution in other words, or in typographical display technology
It is realized with the printing technology of low resolution and prints these sub-pixels.As shown in Figure 1, being one of the scheme of this technology.In Fig. 1
The part that dotted line is framed is a rgb pixel unit, includes the sub-pixel of RGB (RGB) three kinds of colors.And sub-pixel
Between, same color is arranged together, and biggish same sub-pixels hole is formed, to be conducive to be deposited or print to realize phase
Answer resolution ratio.
However, under study for action, it is corresponding that inventor has found that such technology there is a problem of.With the scheme of the pixel arrangement of Fig. 1
For, when needing to show a green oblique line, the sub-pixel of actual displayed is often difficult to uniformly aobvious because of the relationship arranged
Show.When example wants display one 45 degree of green oblique line by dotted line institute frame pixel unit as shown in figure 1, what is actually lighted is in figure
The sub-pixels such as G1, G2 and G3.Obviously, they are practical is not on straight line.And if same oblique line is passed through
Adjacent pixel unit, the then pixel lighted are totally different from the pixel arrangement in Fig. 1 again, are not simple translation relation.This
It results in, when real display of high resolution images, using the display of this kind of special pixel permutation technology, the performance of details is also
Not as good as due effect under traditional pixel arrangement.
Meanwhile scattering layer technology has been widely used in display manufacturing.Scattering layer is usually in certain transparent master
In the film that body material is formed, metal particle or other refractive index are mixed obviously different from the particle of material of main part, to allow light
By when random scattering occurs.Its common features includes: improving the light uniformity of liquid crystal white light backboard, in certain displays
The angle of visibility distribution for improving light out, the total reflection for reducing device interfaces improve light output, etc..But in the display of rgb pixel
In device, can encounter a serious problem using scattering layer: the light that scattering will lead to sub-pixel is diffused into adjacent pixel even more
Far, smudgy so as to cause image.This causes scattering layer technology to be difficult to be directly applied to show from the colour of main light emission rgb pixel
Show on device.Then, especially in high-resolution application, how ill effect is avoided to become using the advantage of scattering layer
A kind of challenge.
Therefore, the characteristics of the present invention is based on high-resolution pixel arrangement design and scattering layers will in bottom emitting display
The two is combined together, and provides a kind of display device for being able to ascend high-resolution display effect.
Refer to Fig. 2~3, the display device 10 of an embodiment of the present invention, it may include tft array substrate 110 and successively
The first flatness layer 120, scattering layer 130, the second flatness layer 140 and luminescent layer 150 on tft array substrate 110.
In one embodiment, tft array substrate 110 is the transparent substrate with TFT drive array.
In one embodiment, the first flatness layer 120 is set on tft array substrate 110, for planarizing tft array base
Plate forms smooth flat upper surface.
Further, the first flatness layer 120 is transparent planar layer.
Scattering layer 130, be set to the first flatness layer 120 on, including light blocking divider wall 131 and by light blocking divider wall 131 every
The multiple scattering units 132 opened.
In one embodiment, light blocking divider wall 131 is arranged around a scattering unit 132.
In one embodiment, light blocking divider wall 131 is arranged around each scattering unit 132, that is to say, that each scattering is single
Member 132 is surrounded with light blocking divider wall 131.Specifically, light blocking divider wall 131 forms grid by criss-cross sub- divider wall
Shape, scattering unit are located at the latticed net region.
Second flatness layer 140 is set on scattering layer 130, and light blocking divider wall 131 is embedded in the second flatness layer 140.
That is upper limb protrusion scattering unit 132 of the light blocking divider wall 131 of scattering layer 130 far from tft array substrate 110 is far from TFT
The upper surface of array substrate 110.
Luminescent layer 150 is set on the second flatness layer 140, including multiple pixel units (Fig. 2 does not show), pixel unit and
The position of scattering unit is arranged in a one-to-one correspondence.
Fig. 3 specifically is referred to, is the scattering layer of 1 display device luminescent layer pixel arrangement of embodiment corresponding diagram design
The position of schematic diagram, scattering unit and pixel unit is arranged in a one-to-one correspondence.
It is worth noting that, the position of scattering unit and pixel unit is arranged in a one-to-one correspondence, refer in multiple scattering units
Each scattering unit position it is corresponding with the position of a pixel unit, in display device include multipair position it is corresponding
Scattering unit and pixel unit.
In one embodiment, the mode of luminescent layer pixel arrangement referring to Figure 1, what dotted line frame was framed in figure is one
A pixel unit, each pixel unit includes red (R), green (G) and blue (B) three sub-pixels, and RGB sub-pixel is in
Isosceles triangle arrangement.
Specifically, continuing with referring to Fig. 1, the position of blue subpixels in luminescent layer, red sub-pixel and green sub-pixels
It does not overlap, the quantity of red sub-pixel or green sub-pixels is twice of blue subpixels quantity, and the sub- picture of single blue
The area of element is about the sum of single red sub-pixel and the area of single green sub-pixels.Wherein, blue subpixels are arranged in row,
Red sub-pixel or green sub-pixels are arranged in a manner of double space in row, i.e., with two red sub-pixels, two of arrangement in a line
A green sub-pixels, two red sub-pixels, two green sub-pixels, and the position of red sub-pixel and green sub-pixels can
With interchange, as shown in Figure 1, the red sub-pixel and green sub-pixels of two row blue subpixels of arrangement, the arrangement of two row intervals.
In this way, the pixel arrangement of same color is together, biggish same color pixel hole is formed, is not only advantageous to be deposited or realize to beat
Print, can also increase the area of blue subpixels in each pixel unit, improve the resolution ratio of display, increase accordingly blue son
The service life of pixel.
In one embodiment, Fig. 2 is referred to, luminescent layer 150 includes pixel embankment 151 and kept apart by pixel embankment 151
Multiple pixels hole 153, multiple pixels hole 153 is in row arrangement, and the pixel of adjacent rows cheats Heterogeneous Permutation (not shown), often
At least provided with two electrodes 155 in one pixel hole, electrode 155 is connected with the TFT drive array on substrate 110, so that each
At least there are two the sub-pixel of same color, the corresponding sub-pixel of each electrode 155, the sub- pictures in a pixel hole 153
Element is red sub-pixel, green sub-pixels or blue subpixels, adjacent red sub-pixel, green sub-pixels and blue subpixels
Form a pixel unit.
It is appreciated that ink falls into the pixel hole of pixel embankment (bank) isolation, and real in the print procedure of luminescent layer
The luminous region in border is defined in the battery plate in being cheated as pixel.Therefore, in high-resolution pixel arrangement design, a pixel
Multiple electrodes can be accommodated in hole, as shown in Fig. 2, one pixel cheats interior discrete two electrodes, in order to indicate this meaning so as to shape
At two independent, same color sub-pixels.The design that luminescent layer 150 is carried out using the pixel arrangements of Fig. 1, works as pixel
What is deposited in hole is red pixel or green pixel, which cheats interior then discrete four electrodes, to form 4 independent red
Sub-pixel or 4 independent green sub-pixels；When what is deposited in pixel hole is blue pixel, then the pixel cheats interior discrete two electricity
Pole, to form 2 independent blue subpixels.Adjacent red sub-pixel, green sub-pixels and blue subpixels composition one
A pixel unit.
It should be noted that Fig. 1 is only high-resolution of the present invention there are many kinds of high resolution display part pixel arrangements
A kind of mode of rate display device pixel arrangement, the patterning that layer can be scattered for different pixel arrangements are set
Meter, the position for meeting scattering unit and pixel unit is arranged in a one-to-one correspondence.It is appreciated that scattering unit and pixel unit
Position be arranged in a one-to-one correspondence, can be overlook position direction it is completely overlapped, can also not exclusively be overlapped.
In one embodiment, the surface area and pixel unit away from tft array substrate of one-to-one scattering unit
The surface area away from tft array substrate it is equal.In this way, as shown in figure 3, overlooking one a pair of potential scattering unit and pixel unit
It answers and completely overlapped.It is appreciated that
In other embodiments, scattering unit away from tft array substrate surface area and pixel unit deviate from TFT
The surface area of array substrate may not necessarily be identical.
In one embodiment, the second flatness layer 140 with a thickness of 0.1 μm~20 μm.
In one embodiment, light blocking divider wall 131 is at least embedded in the 3/4 of the second flatness layer.In this way, can effectively prevent to dissipate
It penetrates the device scattered in unit by any direction and shines and enter adjacent rgb pixel unit.
Further, the upper limb of light blocking divider wall 131 is as far as possible with the second flatness layer 140 away from tft array substrate side
Surface be close.
In one embodiment, two kinds of different materials of refractive index, and the folding of two kinds of materials are included at least in scattering unit 132
The difference for penetrating rate is greater than the 15% of a kind of any refractive index of material.
It is appreciated that the scattering unit of scattering layer can be prepared by the material of different refractivity, and between material
Refractive index has significantly different, specifically needs to meet in mixing material at least a pair of of materials A, B, their specific refractivity it is exhausted
It is greater than the 15% of the refractive index of any one material of materials A or B to value.
In one embodiment, in scattering unit, the weight percentage of materials A is 0.5%~99.5%, material B's
Weight percentage is 0.5%~99.5%.
In one embodiment, the refractive index of materials A is less than or equal to 1.5, and the refractive index of material B is more than or equal to 1.9.Specifically
, materials A can be less than or equal to 1.5 silicone resin for refractive index, and material B can be the metal oxygen that refractive index is more than or equal to 1.9
Compound nanometer or micron particles, such as nanometer or micron-sized titanium dioxide, zinc oxide etc..
In one embodiment, the light blocking divider wall 131 of scattering layer 130 is black light blocking divider wall, prepares raw material as packet
Include the mixture of photosensitive resin and black dyes.Specifically, black dyes can be but be not limited to carbon black.
In one embodiment, scattering unit with a thickness of 100nm~100 μm.
It should be noted that the wiring that above structure is necessary for electrode reserves via structure.More preferably, scattering layer and first
Flatness layer, preparing for the second flatness layer include photosensitive resin in raw material, in this way, convenient for being reserved after every layer of process using photoetching process
Via hole after can also all preparing by each layer, manufactures via hole with photoetching process cooperation ion beam etching process.
Another embodiment of the present invention provides the preparation method of aforementioned display device part, comprising the following steps:
S1, tft array substrate 110 is provided.
S2, in forming the first flatness layer 120 on tft array substrate 110.
S3, on the first flatness layer 120 formed scattering layer 130, scattering layer include light blocking divider wall 131 and by by light blocking every
The multiple scattering units 132 separated from wall 131.
In one embodiment, in forming light blocking divider wall 131 on the first flatness layer 120, thus on the first flatness layer 120
Multiple scattering regions are surrounded, scattering unit 132 is formed respectively at deposition in multiple scattering regions, obtains scattering layer 130.
In one embodiment, the patterning schemes of layer are scattered referring to Fig. 3, using traditional photoetching process, black matrix
Technique realizes patterning, forms black light blocking divider wall 132, i.e. black matrix.Again by the scattering liquid containing different refractivity material
It is coated in the black matrix prepared by solwution methods such as printing, blade coating or spin coatings, it is single to obtain scattering for film-forming after drying
Member.In this way, scattering particles can be uniformly distributed in silicone resin, scattering properties is improved.
It in other embodiments, can be in depositing scattering unit material on the first flatness layer 120, then using conventional pore-creating work
Skill etc. removes the scattering unit part in required setting 132 region of light blocking divider wall, and in formation light blocking divider wall in the region.
In one embodiment, scattering liquid includes two kinds of materials that at least refractive index is different, and the refractive index of two kinds of materials it
Difference is greater than the 15% of the refractive index of any one kind.
Further, the refractive index of one of material is less than or equal to 1.5, and the refractive index of another material is more than or equal to
1.9.Specifically, a kind of material can be less than or equal to 1.5 silicone resin for refractive index, another material can be refractive index and be greater than
Metal oxide nano or micron particles equal to 1.9, such as nanometer or micron-sized titanium dioxide, zinc oxide etc..
In one embodiment, scattering liquid further includes organic solvent.Wherein, organic solvent can be but be not limited to isopropanol,
Ethyl alcohol.
In one embodiment, the weight percentage for scattering the organic solvent in liquid is 40%~90%.
In one embodiment, in order to improve the scattering properties of scattering layer, the aggregation of scattering particles is prevented, scatters and is also wrapped in liquid
Include the dispersing agent of 2wt%~30wt%.Specific dispersing agent can be acetylacetone,2,4-pentanedione etc..
S4, the second flatness layer 140 is formed in preparation on scattering layer.The preparation of the common process such as blade coating, spin coating specifically can be used
Flatness layer.The material of second flatness layer can be insulating resin, metal oxide insulating layer.
Prepare luminescent layer 150 on S5, the second flatness layer 140, luminescent layer 150 includes multiple pixel units, described in each
Pixel unit includes three sub-pixels of red, green, blue；The position of pixel unit and scattering unit 132 is arranged in a one-to-one correspondence.
Specifically, in forming patterned pixel embankment 151 on the second flatness layer 140, pixel embankment 151 is on scattering layer
Multiple pixel holes 153 are surrounded, multiple pixel holes 153 are in row arrangement, and the pixel of adjacent rows cheats Heterogeneous Permutation；Then in each
Two electrodes 155 are at least formed in a pixel hole, and electrode 155 is connected with the TFT drive array on substrate 110；Institute referring to Fig.1
The pixel arrangements shown print luminescent layer ink, and drying and forming-film in pixel is cheated, thus shape in each pixel hole 153
At at least there are two the sub-pixels of same color, the corresponding sub-pixel of each electrode 155, the sub-pixel is red sub- picture
Element, green sub-pixels or blue subpixels, adjacent red sub-pixel, green sub-pixels and blue subpixels form a pixel
The position of unit, pixel unit and scattering unit 132 is arranged in a one-to-one correspondence.
It should be noted that the wiring that above structure is necessary for electrode reserves via structure.More preferably, scattering layer and flat
Preparing for layer includes photosensitive resin in raw material, in this way, via hole is reserved using photoetching process after every layer of process, it can also be by flat
After layer all prepares, via hole is manufactured with photoetching process cooperation ion beam etching process.
Another embodiment of the present invention provides a kind of display device, including prepared by aforementioned display device part or the use above method
Obtained display device.
The display device of above embodiment of the present invention has and luminescent layer picture by adding in display device light direction
The scattering layer of the plain one-to-one scattering unit of unit improves to prevent the light loss of waveguide (waveguide) mode
Light extraction efficiency；Simultaneously as the scattering unit of scattering layer is spaced apart by light blocking divider wall, can prevent between different pixels unit
Because scattering crosstalk caused by light, blurring phenomenon is avoided；Further, due to the scattering process of scattering unit, same picture
The light-out effect of sub-pixel more levels off to the illumination effect of whole pixel unit in plain unit, so as to improve because of arrangement of subpixels
The loss of image quality caused by uneven is illustrated in figure 4 the green being located on non-rectilinear in an embodiment of the present invention display device
The luminescence display effect of sub-pixel, by the scattering process of scattering unit, green sub-pixel for emitting light is corresponding scattered in scattering layer
It penetrates in unit and is dissipated repeatedly, projected until from front, to form the luminous visual effect of whole rgb pixel unit, showed
Green display effect on oblique line, therefore, can effectively avoid factor pixel distance too far and generate vision discontinuously feel,
It is effectively improved image quality, promotes the display effect of high resolution display, to meet high-resolution requirement.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of display device characterized by comprising
Tft array substrate；
Luminescent layer is set on the tft array substrate, and the luminescent layer includes multiple pixel units；
Scattering layer is set between the tft array substrate and the luminescent layer, and the scattering layer includes light blocking divider wall and by institute
State multiple scattering units that light blocking divider wall separates, the position of the scattering unit and the pixel unit is arranged in a one-to-one correspondence.
2. display device according to claim 1, which is characterized in that display device according to claim 1, it is special
Sign is that each scattering unit is surrounded with the light blocking divider wall.
3. display device according to claim 1, which is characterized in that the display device further includes being set to the scattering layer
With the flatness layer between the luminescent layer, the light blocking divider wall is also embedded in the flatness layer.
4. display device according to claim 3, which is characterized in that the flatness layer with a thickness of 0.1 μm~20 μm, institute
State light blocking divider wall is at least embedded in the flatness layer 3/4.
5. display device according to claim 1, which is characterized in that it is different that the scattering unit includes at least refractive index
The village Liang Zhong material, the specific refractivity of described two materials are greater than the 15% of the refractive index of any of them material.
6. display device according to claim 5, which is characterized in that in described two materials, the folding of one of material
Rate is penetrated less than or equal to 1.5, the refractive index of another material is more than or equal to 1.9.
7. display device according to claim 1, which is characterized in that the raw material for preparing of the divider wall includes photosensitive resin
And black dyes.
8. any display device according to claim 1~7, which is characterized in that the scattering unit with a thickness of 100nm
~100 μm.
9. a kind of preparation method of display device characterized by comprising
Tft array substrate is provided；
In forming scattering layer on the tft array substrate, the scattering layer includes light blocking divider wall and by the light blocking divider wall
The multiple scattering units separated；
In forming luminescent layer on the scattering layer, the luminescent layer includes multiple pixel units, and the pixel unit and described
The position of scattering unit is arranged in a one-to-one correspondence.
10. a kind of display device, which is characterized in that including any display device of claim 1~8 or use right
It is required that the display device that 9 preparation method is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811086927.6A CN110429196B (en) | 2018-09-18 | 2018-09-18 | Display device, preparation method of display device and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811086927.6A CN110429196B (en) | 2018-09-18 | 2018-09-18 | Display device, preparation method of display device and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110429196A true CN110429196A (en) | 2019-11-08 |
| CN110429196B CN110429196B (en) | 2022-03-18 |
Family
ID=68407239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811086927.6A Active CN110429196B (en) | 2018-09-18 | 2018-09-18 | Display device, preparation method of display device and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110429196B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1464766A (en) * | 2002-06-25 | 2003-12-31 | 铼宝科技股份有限公司 | Composite colour organic electroluminescent display device |
| CN101288172A (en) * | 2005-09-30 | 2008-10-15 | 伊斯曼柯达公司 | Patterning OLED device electrodes and optical material |
| CN101652870A (en) * | 2007-03-29 | 2010-02-17 | 伊斯曼柯达公司 | Electroluminescent device having spacer elements |
| US20100308332A1 (en) * | 2007-02-23 | 2010-12-09 | Masayuki Ono | Display device |
| CN204271086U (en) * | 2014-12-29 | 2015-04-15 | 北京维信诺科技有限公司 | A kind of display screen body taking out structure containing light |
| CN104538427A (en) * | 2014-12-26 | 2015-04-22 | 北京维信诺科技有限公司 | Organic light-emitting display device and manufacturing method thereof |
-
2018
- 2018-09-18 CN CN201811086927.6A patent/CN110429196B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1464766A (en) * | 2002-06-25 | 2003-12-31 | 铼宝科技股份有限公司 | Composite colour organic electroluminescent display device |
| CN101288172A (en) * | 2005-09-30 | 2008-10-15 | 伊斯曼柯达公司 | Patterning OLED device electrodes and optical material |
| US20100308332A1 (en) * | 2007-02-23 | 2010-12-09 | Masayuki Ono | Display device |
| CN101652870A (en) * | 2007-03-29 | 2010-02-17 | 伊斯曼柯达公司 | Electroluminescent device having spacer elements |
| CN104538427A (en) * | 2014-12-26 | 2015-04-22 | 北京维信诺科技有限公司 | Organic light-emitting display device and manufacturing method thereof |
| CN204271086U (en) * | 2014-12-29 | 2015-04-15 | 北京维信诺科技有限公司 | A kind of display screen body taking out structure containing light |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110429196B (en) | 2022-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106653804B (en) | A kind of OLED display device | |
| CN106960863B (en) | The preparation method of display pixel arrangement, display panel and display panel | |
| CN104037202B (en) | A kind of preparation method of displayer part and its sub-pixel structure | |
| CN104103672B (en) | OLED (Organic Light Emitting Diode) unit and fabrication method thereof, OLED display panel and OLED display apparatus | |
| CN208570613U (en) | Dot structure and display device | |
| CN107731870A (en) | Organic LED pixel structure and display panel comprising it, display device | |
| CN106981501A (en) | The preparation method of display pixel arrangement, display panel and display panel | |
| CN206322697U (en) | Dot structure and the OLED display panel for including the dot structure | |
| CN111341804A (en) | Display device, preparation method thereof and display device | |
| CN107146804A (en) | Organic LED pixel structure and organic LED display device | |
| CN105185269B (en) | Display panel, display device and display methods | |
| CN107968103A (en) | Dot structure and its manufacture method, display device | |
| CN109427850A (en) | Dot structure and display panel comprising the dot structure | |
| CN105355643B (en) | A kind of dot structure, its production method, display panel and display device | |
| CN110444569A (en) | Pixel arrangement structure and display panel | |
| CN109085717A (en) | Display panel and display device | |
| CN110224016A (en) | Dot structure and display panel | |
| CN106960913A (en) | Light emitting diode with quantum dots display panel and preparation method thereof | |
| CN108091667A (en) | Dot structure and the OLED display panel for including the dot structure | |
| CN110531550A (en) | Display panel and display device | |
| CN206340548U (en) | OLED pixel arrangement, metal mask plate and OLED display screen | |
| CN107369702A (en) | A kind of OLED display panel and preparation method thereof | |
| CN108565277A (en) | Display panel and preparation method thereof | |
| CN108878497A (en) | Display base plate and manufacturing method, display device | |
| CN110323260A (en) | Pixel arrangement structure, image element driving method and display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |