CN110429121A - Silicon substrate micro display screen and preparation method thereof - Google Patents
Silicon substrate micro display screen and preparation method thereof Download PDFInfo
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- CN110429121A CN110429121A CN201910724840.5A CN201910724840A CN110429121A CN 110429121 A CN110429121 A CN 110429121A CN 201910724840 A CN201910724840 A CN 201910724840A CN 110429121 A CN110429121 A CN 110429121A
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- silicon substrate
- display screen
- micro display
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 111
- 238000005530 etching Methods 0.000 claims abstract description 51
- 238000005538 encapsulation Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000011241 protective layer Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000000243 solution Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000006872 improvement Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000011265 semifinished product Substances 0.000 description 6
- -1 argon ion Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides a kind of silicon substrate micro display screen and preparation method thereof, the silicon substrate micro display screen preparation method is the following steps are included: S1: providing a silicon substrate, prepares anode layer on the silicon substrate；S2: oled layer, cathode layer and protective layer are successively deposited on the silicon substrate and anode；S3: cavity is formed in the cathode layer and protective layer using yellow light technique and etching technics；S4: using plasma bombards and removes oled layer exposed under cavity；S5: forming thin-film encapsulation layer, and the thin-film encapsulation layer covers the protective layer and the silicon substrate；Wherein, etching technics described in step S3, step S4 and step S5 are carried out under vacuum conditions.Silicon substrate micro display screen preparation method of the invention will etch and thin film encapsulation processes are placed under vacuum environment and carry out, and prevents oled layer from being invaded by steam and oxygen, extends the service life of silicon substrate micro display screen.
Description
Technical field
The present invention relates to OLED display manufacturing fields more particularly to a kind of silicon substrate micro display screen and preparation method thereof.
Background technique
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display and CTR (Cathode
Ray Tube, cathode-ray tube) display, TFT-LCD (Thin Film Transistor-Liquid Crystal
Display, Thin Film Transistor-LCD) compared to lighter and thinner design, broader visual perspective, faster
Response speed and lower power consumption the features such as, therefore OLED display is gradually as next-generation display equipment and by people
Concern.
Current OLED display screen body mostly uses greatly the different OLED materials of vapor deposition to realize that OLED is graphical, and this method is in picture
Plain density is that there is no problem when being lower than 700ppi.But when pixel density is greater than 800ppi, existing manufacturing technology will be into
Enter physics bottleneck, there is a problem of the graphical difficulty of high pixel density.
In addition, the organic material that OLED is used is especially sensitive to water oxygen, it is very easy to occur with the steam penetrated anti-
It answers, influences the injection of charge, the steam and oxygen penetrated can also be chemically reacted with organic material, these reactions are to draw
Play the principal element of the decline of OLED device performance, the OLED device lost of life.Therefore OLED device needs stringent packaging technology
To protect them from the erosion of water and oxygen.
Therefore, it is necessary to a kind of new silicon substrate micro display screen and preparation method thereof be provided, to solve the above problems.
Summary of the invention
The purpose of the present invention is to provide a kind of silicon substrate micro display screen preparation method, the silicon substrate prepared by this method is micro- aobvious
Display screen service life is longer.
To achieve the above object, the present invention provides a kind of silicon substrate micro display screen preparation methods, which is characterized in that including with
Lower step:
S1: a silicon substrate is provided, prepares anode layer on the silicon substrate；
S2: oled layer, cathode layer and protective layer are successively deposited on the silicon substrate and anode layer；
S3: cavity is formed in the cathode layer and protective layer using yellow light technique and etching technics；
S4: using plasma bombards and removes oled layer exposed under cavity；
S5: forming thin-film encapsulation layer, and the thin-film encapsulation layer covers the protective layer and the silicon substrate；
Wherein, etching technics described in step S3, step S4 and step S5 are carried out under vacuum conditions.
Technical solution as a further improvement of that present invention, etching technics described in step S3, step S4 and step S5
It is carried out in etching and plated film linked system, the etching and plated film linked system include transfer chamber and be connected with the transfer chamber
The etching chamber that connects and the encapsulation room for being used to form thin-film encapsulation layer are vacuum state inside the etching and plated film linked system.
Technical solution as a further improvement of that present invention, the etching and plated film linked system further include and the transmission
The preposition sample transfer chamber and cooling chamber that room is connected.
Technical solution as a further improvement of that present invention, the etching chamber include first for etching the protective layer
Etching chamber, the second etching chamber for etching the cathode layer and the third etching chamber for etching the oled layer.
Technical solution as a further improvement of that present invention, the step S1 specifically comprise the following steps:
S11: a silicon substrate is provided, several regularly arranged via holes are prepared on the silicon substrate；
S12: self-registered technology is used, anode layer is deposited on the silicon substrate, the anode layer includes and the via hole
One-to-one anode unit.
Technical solution as a further improvement of that present invention, the technological temperature of the yellow light technique are described etc. less than 90 DEG C
Gas ions are argon ion.
Technical solution as a further improvement of that present invention, the thin-film encapsulation layer are formed by physical vaporous deposition,
The material of the thin-film encapsulation layer is silicon nitride.
Technical solution as a further improvement of that present invention, the width of the anode unit are 5 microns.
Technical solution as a further improvement of that present invention, the oled layer include organic luminous layer, be located at anode layer with
Hole injection layer and hole transmission layer between organic luminous layer and the electronics note between cathode layer and organic luminous layer
Enter layer and electron transfer layer.
The object of the invention is also to provide a kind of silicon substrate micro display screens.
To achieve the above object, the present invention provides a kind of silicon substrate micro display screens, including silicon substrate, the anode set gradually
Layer, oled layer, cathode layer, protective layer and the thin-film encapsulation layer that the protective layer and the silicon substrate is completely covered, the silicon substrate
Micro display screen is made of any of the above-described silicon substrate micro display screen preparation method.
The beneficial effects of the present invention are: silicon substrate micro display screen preparation method of the invention will etch and thin film encapsulation processes are set
It is carried out under vacuum environment, prevents oled layer from being invaded by steam and oxygen, extend the service life of silicon substrate micro display screen.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silicon substrate micro display screen of the present invention.
Fig. 2 is the flow diagram of silicon substrate micro display screen preparation method of the present invention.
Fig. 3 is the structural schematic diagram of the semi-finished product formed in Fig. 1 step S1.
Fig. 4 is the structural schematic diagram of the semi-finished product formed in step S2 of the present invention.
Fig. 5 is the structural schematic diagram of the semi-finished product formed in step S31 of the present invention.
Fig. 6 is the structural schematic diagram of the semi-finished product formed in step S3 of the present invention.
Fig. 7 is the structural schematic diagram of the semi-finished product formed in step S4 of the present invention.
Fig. 8 is the structural schematic diagram of etching and plated film linked system in the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Refering to Figure 1, the present invention provides a kind of silicon substrate micro display screens comprising: the silicon substrate 10 that sets gradually,
Anode layer 20, oled layer 30, cathode layer 40, protective layer 50 and the thin-film encapsulation layer that protective layer 50 and silicon substrate 10 is completely covered
60。
Specifically, silicon substrate 10 is equipped with several regularly arranged via holes 11, and anode layer 20 includes several anode units
21, several anode units 21 are arranged in anode layer 20 in pixel graphics, and each anode unit 21 with corresponding via hole 11 1
One is corresponding, and anode unit 21 is indium oxide tin film (ITO).In the present embodiment, the width of anode unit 21 is 5 microns, but not
It should be as limit.
Oled layer 30 includes organic luminous layer, the hole injection layer between anode layer 20 and organic luminous layer and hole
Transport layer and electron injecting layer and electron transfer layer between cathode layer and organic luminous layer.Further, hole passes
Defeated layer is between organic luminous layer and hole injection layer；Electron transfer layer is between organic luminous layer and electron injecting layer.
In the present invention, the material of thin-film encapsulation layer 60 is silicon nitride.Protective layer 50 and silicon is completely covered in thin-film encapsulation layer 60
Substrate 10, to encapsulate the silicon substrate micro display screen for completing etching.
It please refers to shown in Fig. 1-Fig. 7, silicon substrate micro display screen preparation method of the invention includes the following steps:
S1: a silicon substrate 10 is provided, anode layer 20 is prepared on silicon substrate 10, please be join shown in Fig. 3；
S2: being successively deposited oled layer 30, cathode layer 40 and protective layer 50 on silicon substrate 10 and anode 20, please join Fig. 4 institute
Show；
S3: cavity is formed in the cathode layer 40 and protective layer 50 using yellow light technique and etching technics, Fig. 5 and figure please be join
Shown in 6；
S4: using plasma bombards and removes oled layer 30 exposed under cavity, please join shown in Fig. 7；
S5: thin-film encapsulation layer 60,60 protective mulch 50 of thin-film encapsulation layer and silicon substrate 10 are formed, please be join shown in Fig. 1.
Step S1 is specifically included:
S11: a silicon substrate 10 is provided, several regularly arranged via holes 11 are prepared on silicon substrate 10；
S12: using self-registered technology, and anode layer 20 is deposited on silicon substrate 10, and anode layer 20 includes and the via hole 11
One-to-one anode unit 21.
In step S3, yellow light technique is specifically included:
Step S31: photoresist 70 is coated on protective layer 50 and is solidified；
Step S32: covering lithography mask version above photoresist 70 after hardening, and photoresist 70 is exposed and is shown
Shadow exposes the region corresponding with cavity to be formed of protective layer 50.
In step S3, etching technics is specifically included:
Step S33: utilizing reactive ion etching process, by the protective layer 50 being exposed and with the protection that is exposed
The corresponding cathode layer 40 of layer 50 removes, and forms cavity；
Step S34: removal remains in the photoresist 70 on protective layer 50.
Wherein, in step S31, photoresist 70 can select positive photoresist or negative photoresist according to actual needs, not limit herein
System.
Preferably, it uses in step S32 with SiO2For the lay photoetching mask plate of material.
In addition, it should be noted that the photoresist 70 of low-temperature setting is selected in step S3, so set, making yellow light work
The technological temperature of skill is lower than 90 DEG C.
In the present invention, step S33-S5 is carried out in etching and plated film linked system 80.Please join shown in Fig. 8, etching and
Plated film linked system 80 includes transfer chamber 81 and the preposition sample transfer chamber 87 being connected with transfer chamber 81, etching chamber, for shape
Encapsulation room 85 and cooling chamber 86 at thin-film encapsulation layer 60.The semi-finished product that step S32 is formed first pass around preposition sample transfer chamber
87 enter etching and plated film linked system 80.Etching chamber includes the first etching chamber 82, the second etching chamber 83 and third etching chamber 84.
First etching chamber 82 is used for etch-protecting layer 50, and the second etching chamber 83 is used for etching cathode layer 40, and third etching chamber 84 is for carving
Oled layer 30 is lost, encapsulation room 85 is used to form thin-film encapsulation layer 60.Particularly, it is equipped with physical vapour deposition (PVD) chamber in encapsulation room 85,
Thin-film encapsulation layer 60 is formed in the top of protective layer 50 and silicon substrate 10 by physical vaporous deposition.In addition, etching and plated film
Vacuum state is kept inside linked system 80, is prevented during the preparation process, oled layer 30 is invaded by steam and oxygen.
The plasma bombardment of step S4 carries out in third etching chamber 84.Firstly, by radio-frequency power supply in certain pressure
It enough energy is applied to gas under power is allowed to ionization and become as plasmoid, generate the unordered plasma of high-energy,
By the oled layer under plasma bombardment cavity, to achieve the purpose that the lower oled layer in removal cavity.In the present invention, preferred argon gas
Plasma is carried out, i.e. plasma is argon ion.
In conclusion the present invention selects yellow light technique, etching technics to realize that high-resolution silicon substrate micro display screen is graphical,
The existing patterned physics limit of vapor deposition is broken through, realizes the display of high pixel density；Using etching and plated film linked system 80, make
It must etch and encapsulation process carries out in vacuum environment, oled layer is protected, prevent oled layer from being invaded by steam and oxygen,
Extend the service life of silicon substrate micro display screen.
Above embodiments are merely to illustrate the present invention and not limit the technical scheme described by the invention, to this specification
Understanding should based on person of ordinary skill in the field, although this specification referring to the above embodiments to the present invention
Detailed description is had been carried out, it will be appreciated, however, by one skilled in the art that person of ordinary skill in the field still may be used
To modify or equivalently replace the present invention, and all do not depart from the technical solution of the spirit and scope of the present invention and its change
Into should all cover in scope of the presently claimed invention.
Claims (10)
1. a kind of silicon substrate micro display screen preparation method, which comprises the following steps:
S1: a silicon substrate is provided, prepares anode layer on the silicon substrate；
S2: oled layer, cathode layer and protective layer are successively deposited on the silicon substrate and anode layer；
S3: cavity is formed in the cathode layer and protective layer using yellow light technique and etching technics；
S4: using plasma bombards and removes oled layer exposed under cavity；
S5: forming thin-film encapsulation layer, and the thin-film encapsulation layer covers the protective layer and the silicon substrate；
Wherein, etching technics described in step S3, step S4 and step S5 are carried out under vacuum conditions.
2. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that etching work described in step S3
Skill, step S4 and step S5 are carried out in etching and plated film linked system, and the etching and plated film linked system include transfer chamber
And the etching chamber being connected with the transfer chamber and the encapsulation room for being used to form thin-film encapsulation layer, the etching and plated film linkage system
Internal system is vacuum state.
3. silicon substrate micro display screen preparation method according to claim 2, which is characterized in that the etching and plated film linkage system
System further includes the preposition sample transfer chamber being connected with the transfer chamber and cooling chamber.
4. silicon substrate micro display screen preparation method according to claim 2, which is characterized in that the etching chamber includes for carving
Lose the first etching chamber of the protective layer, the second etching chamber for etching the cathode layer and for etching the oled layer
Third etching chamber.
5. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the step S1 specifically include as
Lower step:
S11: a silicon substrate is provided, several regularly arranged via holes are prepared on the silicon substrate；
S12: using self-registered technology, be deposited anode layer on the silicon substrate, the anode layer include with the via hole one by one
Corresponding anode unit.
6. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the process warm of the yellow light technique
For degree less than 90 DEG C, the plasma is argon ion.
7. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the thin-film encapsulation layer passes through object
Physical vapor deposition method is formed, and the material of the thin-film encapsulation layer is silicon nitride.
8. silicon substrate micro display screen preparation method according to claim 5, which is characterized in that the width of the anode unit is
5 microns.
9. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the oled layer includes organic hair
Photosphere, the hole injection layer between anode layer and organic luminous layer and hole transmission layer and it is located at cathode layer and organic hair
Electron injecting layer and electron transfer layer between photosphere.
10. a kind of silicon substrate micro display screen, including silicon substrate, anode layer, oled layer, cathode layer, the protective layer and complete set gradually
The thin-film encapsulation layer of protective layer described in all standing and the silicon substrate, which is characterized in that the silicon substrate micro display screen is used as weighed
Benefit require any one of 1~9 described in silicon substrate micro display screen preparation method be made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724840.5A CN110429121A (en) | 2019-08-07 | 2019-08-07 | Silicon substrate micro display screen and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724840.5A CN110429121A (en) | 2019-08-07 | 2019-08-07 | Silicon substrate micro display screen and preparation method thereof |
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| CN110429121A true CN110429121A (en) | 2019-11-08 |
Family
ID=68413005
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| CN201910724840.5A Pending CN110429121A (en) | 2019-08-07 | 2019-08-07 | Silicon substrate micro display screen and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718579A (en) * | 2019-11-18 | 2020-01-21 | 昆山梦显电子科技有限公司 | Silicon-based micro display screen and preparation method thereof |
| CN111029397A (en) * | 2019-12-27 | 2020-04-17 | 安徽熙泰智能科技有限公司 | Silicon-based OLED micro-display device and preparation method thereof |
| CN111370591A (en) * | 2020-03-12 | 2020-07-03 | 浙江大学 | Top-emitting silicon-based perovskite light-emitting diode and preparation method thereof |
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| CN106676532A (en) * | 2015-11-10 | 2017-05-17 | 江苏鲁汶仪器有限公司 | Metal etching device and method |
| CN109509765A (en) * | 2017-09-14 | 2019-03-22 | 黑牛食品股份有限公司 | A kind of organic light emitting display and its manufacturing method |
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- 2019-08-07 CN CN201910724840.5A patent/CN110429121A/en active Pending
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| US20050109732A1 (en) * | 2003-11-25 | 2005-05-26 | Pioneer Corporation | Method for manufacturing organic electroluminescent element and apparatus using the method |
| CN106676532A (en) * | 2015-11-10 | 2017-05-17 | 江苏鲁汶仪器有限公司 | Metal etching device and method |
| CN109509765A (en) * | 2017-09-14 | 2019-03-22 | 黑牛食品股份有限公司 | A kind of organic light emitting display and its manufacturing method |
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| CN110718579A (en) * | 2019-11-18 | 2020-01-21 | 昆山梦显电子科技有限公司 | Silicon-based micro display screen and preparation method thereof |
| WO2021098154A1 (en) * | 2019-11-18 | 2021-05-27 | 昆山梦显电子科技有限公司 | Silicon-based micro display screen and preparation method therefor |
| CN111029397A (en) * | 2019-12-27 | 2020-04-17 | 安徽熙泰智能科技有限公司 | Silicon-based OLED micro-display device and preparation method thereof |
| CN111370591A (en) * | 2020-03-12 | 2020-07-03 | 浙江大学 | Top-emitting silicon-based perovskite light-emitting diode and preparation method thereof |
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Application publication date: 20191108 |