CN110422873A - A kind of AgGaS2Carrying semiconductor material and preparation method thereof among base - Google Patents
A kind of AgGaS2Carrying semiconductor material and preparation method thereof among base Download PDFInfo
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- CN110422873A CN110422873A CN201910610980.XA CN201910610980A CN110422873A CN 110422873 A CN110422873 A CN 110422873A CN 201910610980 A CN201910610980 A CN 201910610980A CN 110422873 A CN110422873 A CN 110422873A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000000843 powder Substances 0.000 claims description 24
- 238000005245 sintering Methods 0.000 claims description 24
- 239000004570 mortar (masonry) Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 17
- 238000000862 absorption spectrum Methods 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 9
- 229910052733 gallium Inorganic materials 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910000928 Yellow copper Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- -1 copper structure compound Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
- C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
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Abstract
The present invention relates to a kind of AgGaS2Carrying semiconductor material and preparation method thereof among base, with the excellent AgGaS of photoelectric properties2For Intermediate Gray matrix semiconductors, intrinsic semiconductor AgGaS is adulterated with VI race element S n2The position Ga, in the band gap of intrinsic semiconductor introduce an interstitial impurity band can effectively improve AgGaS2Optical absorption ability, analyzed by density of electronic states, the impurity band of introducing is mainly formed by element S n-5s and S-3p hydridization.The present invention forms a kind of novel semi-conductor with intermediate band, has the ability for widening absorption spectrum, is expected to be applied to high performance solar batteries field.
Description
Technical field
The present invention relates to technical field of semiconductor, and in particular to a kind of AgGaS2Among base carrying semiconductor material and its
Preparation method.
Background technique
Semiconductor science and technology driven new material, new device, new technology and new cross discipline development innovation, and
Revolutionary change and progress are caused in many technical fields, is had become and national economic development, social progress and national defence
The closely related important science and technology of safety.
The worsening of the problems such as with energy crisis, the new energy such as solar energy, wind energy have been more and more widely used.
Solar battery experienced the development of over half a century since its birth, and in order to improve the efficiency of battery, various new materials are new
Structure is suggested.Photovoltaic power generation is changing existing energy resource structure, is improving the ecological environment as clean renewable energy, with
And it will be play an important role in future source of energy, it has also become the field that countries in the world are extremely paid close attention to.Solar battery is derived from semiconductor
In photovoltaic effect, voltage or electric current will be generated when substantially semiconductor P-N junction is by illumination.It is applied to the sun at present
The semiconductor absorbing ability of energy battery is limited, can only absorb the photon near band gap, and cannot absorb the photon lower than band gap, high
Also it is difficult to be utilized in the photon of band gap, is not ideal solar battery absorbing material.Intermediate Gray solar cell is a kind of
The high efficiency new concept solar cell of solar spectrum is made full use of, theoretical limit efficiency highest can reach 63.2%, be higher than
The limiting efficiency of traditional solar cell.Therefore, in order to obtain the better semiconductor of comprehensive performance, obtain Intermediate Gray solar battery
To extensive use, seek to have the Intermediate Gray semiconductor of suitable absorption band gap to be of great significance.
At this stage, the semiconductor material with intermediate band that can be applied to photovoltaic art is deficient, AgGaS2It is a kind of property
The excellent FTIR radiation transmittance of energy, it has, and transmission region is wide, nonlinear optical coefficients are big, birefringent suitable, dispersion
The features such as low, AgGaS2Band gap is 2.73eV, is highly suitable as the fertile material of efficient Intermediate Gray solar absorption semiconductor,
However AgGaS2The use that the optical absorption ability of carrying semiconductor material is not still able to satisfy high performance solar batteries among base is wanted
It asks.
Summary of the invention
The purpose of the present invention is to solve the above-mentioned problems and provides a kind of AgGaS2Among base carrying semiconductor material and
Preparation method.
The purpose of the present invention is achieved through the following technical solutions:
A kind of AgGaS2The preparation method of carrying semiconductor material among base, with AgGaS2It, will be first for Intermediate Gray matrix semiconductors
Plain Sn is entrained in semiconductor AgGaS2The position Ga, formed have intermediate band, chemical formula AgGa1-xSnxS2AgGaS2In base
Between carrying semiconductor material, wherein 0 x≤0.05 <.
A kind of AgGaS2The preparation method of carrying semiconductor material among base, specifically includes the following steps:
(1) by Ag powder, Ga block, S powder and Sn powder stoichiometrically Vacuum Package in quartz glass tube；
(2) quartz glass tube is carried out it is once sintered, by after gained once sintered sample grinding again Vacuum Package in stone
In English glass tube；
(3) quartz glass tube is subjected to double sintering, gained double sintering sample is ground to get product is arrived.
Preferably, the purity of Ag powder, Ga block described in step (1), S powder and Sn powder is 5N.
Preferably, step (2) the once sintered temperature is 800 DEG C -900 DEG C, and sintering time is 60-80 hours.
Preferably, the temperature of step (3) described double sintering is 800 DEG C -900 DEG C, and sintering time is 60-80 hours.
Preferably, step (2) is placed in Muffle furnace with the quartz glass tube in step (3) and is sintered.
Preferably, step (2) carries out in the agate mortar with the grinding in step (3).
A kind of AgGaS being prepared using above-mentioned preparation method2Carrying semiconductor material among base.
Present invention AgGaS excellent with photoelectric properties first2For Intermediate Gray matrix semiconductors, adulterated with VI race element S n
Intrinsic semiconductor AgGaS2The position Ga, in the band gap of intrinsic semiconductor introduce an interstitial impurity band can effectively improve AgGaS2
Optical absorption ability, Sn doping plays the role of regulate and control acceptor's parent band structure, intermediate band is introduced in band gap, should
Energy band increases the approach of electron transition, so as to cause optical absorption enhancing.It is analyzed by density of electronic states, the impurity band of introducing
Mainly formed by element S n-5s and S-3p hydridization.The present invention forms a kind of novel semi-conductor with intermediate band, has and widens
The ability of absorption spectrum is expected to be applied to high performance solar batteries field.
Compared with prior art, the invention has the following advantages that
(1) reaction of vacuum solid-phase sintering is lower than the temperature that gas shield is sintered, and is conducive to reduce energy consumption.
(2) Muffle furnace has the advantages that stability is strong, heat preservation durability is strong, high degree of automation and highly-safe.
(3) one kind is obtained with AgGa1-xSnxS2For the novel Intermediate Gray solar absorption semiconductor of component, electronics is increased
Extinction path, enhances light absorption.
(4) photoelectric conversion efficiency for improving solar battery, makes it have better application prospect in photovoltaic art.
(5) agate mortar compressive resistance height, acid and alkali-resistance, do not have any mortar bulk mass and are mixed into grinding charge after grinding
In.
(6) Ag powder, Ga block, S powder and Sn powder purity are 5N, avoid impurity from participating in reaction, keep reaction product purer.
Detailed description of the invention
Fig. 1 is AgGaS2With AgGa0.95Sn0.05S2X ray diffracting spectrum；
Fig. 2 is AgGaS2With AgGa0.95Sn0.05S2Optical absorption spectra；
Fig. 3 is that Sn adulterates AgGaS2Density of electronic states figure.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
AgGaS2It is a kind of compound with yellow copper structure, and itself has good absorbing ability, is suitable as
The parent compound of efficiently intermediate carrying semiconductor material.The present embodiment AgGaS excellent with photoelectric properties2For Intermediate Gray parent half
Conductor adulterates intrinsic semiconductor AgGaS with VI race element S n2The position Ga, be introduced into the band gap of intrinsic semiconductor in one
Between impurity band can effectively improve AgGaS2Optical absorption ability, make it have better optical absorption, improve AgGaS2Semiconductor
Comprehensive performance in solar cell field.
Density of electronic states is calculated to be obtained using first-principles calculations method.AgGaS2For yellow copper structure compound, four
It include 16 atoms in the structure cell of angle.Doping computation model takes 2 × 2 × 2 super cell's model, includes 64 atoms, with one
Kind Sn atom replaces the Ga atom in primitive unit cell, and corresponding doping content is 6.25%.In calculating, GGA-PBE exchange is selected to close
Connection functional goes description electron exchange correlation.
The electronic structure of theoretical calculation demonstrates can be in AgGaS2New central electron state is formed in parent band gap, is led
It to be formed by doped chemical Sn-5s and Sn-3p hydridization.AgGaS is adulterated using the Sn that the reaction of vacuum solid-phase sintering obtains2Material,
Absorption spectrum detects the absorption band newly increased, and the method that experimental verification the present embodiment proposes can be effectively in AgGaS2System
The new Intermediate Gray of middle building.
AgGa1-xSnxS2The preparation method of sample includes the following steps:
Step 1: Ga block, S powder, Sn powder (purity is 5N) are by AgGa by Ag powder1-xSnxS2(0.05) stoichiometric ratio is true
Sky is packaged in quartz glass tube.
It is sintered 72 hours Step 2: the quartz glass tube after encapsulation is placed in Muffle furnace, gained sample is ground in agate
Again Vacuum Package after being ground in alms bowl.
Step 3: the sample after grinding is again placed in 72 hours (800-900 DEG C of sintering temperature) of sintering, finally grind again
Mill finally obtains AgGa1-xSnxS2Sample.
The present embodiment introduces half-full Intermediate Gray in by main bandgap, forms the novel semi-conductor with intermediate band, thus
AgGaS is regulated and controled2The band structure of semiconductor, so that electronics, which can not only directly transit to conduction band from valence band, can also make Electron absorption
Energy is less than the photon of forbidden bandwidth, the transition path of electronics is increased, to improve AgGaS2The absorbent properties of semiconductor.
Object phase phenetic analysis is carried out to it by XRD (X-ray diffraction), and carries out absorption spectrum test.Absorption spectrum inspection
The absorption band newly increased is measured, and finds that the sample optical absorptive character after doping is better than intrinsic material.
The present embodiment is specifically described with reference to the accompanying drawing.
Fig. 1 is AgGaS2With AgGa0.95Sn0.05S2XRD spectrum.The XRD spectrum of sample is passed through and diffraction maximum standard card
After illustrate gained sample be pure phase.
Fig. 2 is AgGaS2With AgGa0.95Sn0.05S2Optical absorption spectra.From absorption spectra it can be seen that the semiconductor ratio of doping
Intrinsic semiconductor has stronger optical absorption ability.
Fig. 3 is that Sn adulterates AgGaS2Density of electronic states figure.As can be seen from the figure impurity Intermediate Gray is formd in band gap.
Notional result explains the optical absorption enhancing phenomenon of experiment well
Optical absorption spectra discovery is measured by experiment, intrinsic semiconductor can only absorb partial photonic, mix after Sn element whole
Optical absorption is all remarkably reinforced in a wave-length coverage.Fermi is passed through according to the interstitial impurity energy band that density of electronic states graph discovery introduces
Energy level, exactly because the interstitial impurity band that doping introduces the reason of optical enhancement has made more than electronics a transition path, to inhale
Receive new photon.The present embodiment improves AgGaS2The optical absorption of semiconductor material, absorption spectrum can be seen that the half of doping
Conductor has stronger optical absorption ability than intrinsic semiconductor, thus be expected to improve the photoelectric conversion efficiency of solar battery,
Make it that there is better application prospect in photovoltaic art.
Embodiment 2
A kind of AgGaS2The preparation method of carrying semiconductor material among base, specifically includes the following steps:
(1) by Ag powder, Ga block, S powder and Sn powder (purity is 5N) stoichiometrically Vacuum Package in quartz glass tube
In；
(2) quartz glass tube is carried out once sintered, once sintered temperature is 800 DEG C, and sintering time is to incite somebody to action for 80 hours,
After gained once sintered sample grinding again Vacuum Package in quartz glass tube；
(3) quartz glass tube is subjected to double sintering, the temperature of double sintering is 800 DEG C, and sintering time is 80 hours, will
Gained double sintering sample grinds to arrive product AgGa1-xSnxS2(x=0.01).
Step (2) is placed in Muffle furnace with the quartz glass tube in step (3) and is sintered, grinding in the agate mortar into
Row.
Embodiment 3
A kind of AgGaS2The preparation method of carrying semiconductor material among base, specifically includes the following steps:
(1) by Ag powder, Ga block, S powder and Sn powder (purity is 5N) stoichiometrically Vacuum Package in quartz glass tube
In；
(2) quartz glass tube is carried out once sintered, once sintered temperature is 900 DEG C, and sintering time is 60 hours, will
After gained once sintered sample grinding again Vacuum Package in quartz glass tube；
(3) quartz glass tube is subjected to double sintering, the temperature of double sintering is 900 DEG C, and sintering time is 60 hours, will
Gained double sintering sample grinds to arrive product AgGa1-xSnxS2(x=0.04).
Step (2) is placed in Muffle furnace with the quartz glass tube in step (3) and is sintered, grinding in the agate mortar into
Row.
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (8)
1. a kind of AgGaS2The preparation method of carrying semiconductor material among base, which is characterized in that with AgGaS2For Intermediate Gray parent half
Element S n is entrained in semiconductor AgGaS by conductor2The position Ga, formed have intermediate band, chemical formula AgGa1-xSnxS2's
AgGaS2Carrying semiconductor material among base, wherein 0 x≤0.05 <.
2. a kind of AgGaS according to claim 12The preparation method of carrying semiconductor material among base, which is characterized in that tool
Body the following steps are included:
(1) by Ag powder, Ga block, S powder and Sn powder stoichiometrically Vacuum Package in quartz glass tube；
(2) quartz glass tube is carried out it is once sintered, by after gained once sintered sample grinding again Vacuum Package in quartzy glass
In glass pipe；
(3) quartz glass tube is subjected to double sintering, gained double sintering sample is ground to get product is arrived.
3. a kind of AgGaS according to claim 22The preparation method of carrying semiconductor material among base, which is characterized in that step
Suddenly the purity of Ag powder, Ga block described in (1), S powder and Sn powder is 5N.
4. a kind of AgGaS according to claim 22The preparation method of carrying semiconductor material among base, which is characterized in that step
Suddenly (2) described once sintered temperature is 800 DEG C -900 DEG C, and sintering time is 60-80 hours.
5. a kind of AgGaS according to claim 22The preparation method of carrying semiconductor material among base, which is characterized in that step
Suddenly the temperature of (3) described double sintering is 800 DEG C -900 DEG C, and sintering time is 60-80 hours.
6. a kind of AgGaS according to claim 22The preparation method of carrying semiconductor material among base, which is characterized in that step
Suddenly (2) are placed in Muffle furnace with the quartz glass tube in step (3) and are sintered.
7. a kind of AgGaS according to claim 22The preparation method of carrying semiconductor material among base, which is characterized in that step
Suddenly (2) carry out in the agate mortar with the grinding in step (3).
8. a kind of AgGaS being prepared such as the described in any item preparation methods of claim 1-82Carrying semiconductor material among base.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113511672A (en) * | 2021-06-17 | 2021-10-19 | 上海电机学院 | Method for realizing multi-photon absorption of chromium-doped sulfur gallium silver crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470321A (en) * | 2015-12-02 | 2016-04-06 | 上海电机学院 | Multi-energy-band solar absorbing material and preparation method therefor |
| CN106784067A (en) * | 2016-12-14 | 2017-05-31 | 上海电机学院 | A kind of wide spectrum solar absorption semiconductor and preparation method thereof |
| CN108054241A (en) * | 2017-12-13 | 2018-05-18 | 上海电机学院 | A kind of enhancing CdIn2S4The method of optical absorption |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470321A (en) * | 2015-12-02 | 2016-04-06 | 上海电机学院 | Multi-energy-band solar absorbing material and preparation method therefor |
| CN106784067A (en) * | 2016-12-14 | 2017-05-31 | 上海电机学院 | A kind of wide spectrum solar absorption semiconductor and preparation method thereof |
| CN108054241A (en) * | 2017-12-13 | 2018-05-18 | 上海电机学院 | A kind of enhancing CdIn2S4The method of optical absorption |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113511672A (en) * | 2021-06-17 | 2021-10-19 | 上海电机学院 | Method for realizing multi-photon absorption of chromium-doped sulfur gallium silver crystal |
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