CN110416326A - A kind of production method of copper indium gallium selenium solar cell component - Google Patents
A kind of production method of copper indium gallium selenium solar cell component Download PDFInfo
- Publication number
- CN110416326A CN110416326A CN201810401318.9A CN201810401318A CN110416326A CN 110416326 A CN110416326 A CN 110416326A CN 201810401318 A CN201810401318 A CN 201810401318A CN 110416326 A CN110416326 A CN 110416326A
- Authority
- CN
- China
- Prior art keywords
- film
- graphene
- solar cell
- indium gallium
- copper indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title claims abstract description 38
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 210000003850 cellular structure Anatomy 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 148
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 64
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000011787 zinc oxide Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 20
- 239000011733 molybdenum Substances 0.000 claims abstract description 20
- 239000002070 nanowire Substances 0.000 claims abstract description 16
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000012528 membrane Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 238000004528 spin coating Methods 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 73
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- -1 graphite Alkene Chemical class 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 235000012149 noodles Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of production methods of copper indium gallium selenium solar cell component, comprising: molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide film are sequentially formed on substrate；The method shifted by hot padding, is transferred to eva film surface for graphene-based laminated film, wherein graphene-based laminated film includes graphene film and the nano wire that is arranged on graphene film.The molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide film are encapsulated using the eva film with graphene composite film.The production method of copper indium gallium selenium solar cell component involved in the embodiment of the present invention, thickness≤200nm of graphene-based laminated film, the thickness for being about 800~1200nm compared with AZO film in the prior art, thickness is obviously thinning, the light transmittance of graphene-based laminated film may be up to 94%, resistivity is lower than 8 Ω/sq simultaneously, with excellent light transmittance and low-resistivity, performance is significantly better than AZO film, and graphene-based laminated film is made using the method for spraying or spin coating, reduces technology difficulty.
Description
Technical field
The present invention relates to technical field of thin-film solar, a kind of particularly copper indium gallium selenium solar cell component
Production method.
Background technique
Copper indium gallium selenide (CIGS) Thinfilm solar cell assembly is usually all to serve as transparent lead using zinc oxide aluminum (AZO)
Electric layer (TCO), as the preceding electrode of battery chip, for collecting the photoelectric current of battery generation.AZO layers in CIGS thin film solar energy
Position in battery component, as shown in figure 16 shown in.In order to improve the transfer efficiency of CIGS thin film solar cell module, it is desirable that
AZO layers need to be provided simultaneously with higher light transmittance and lower resistivity.
AZO is usually to be prepared using vacuum magnetron sputtering coating film equipment, according to the doping concentration and magnetic control of Al2O3
The difference of preparation process is sputtered, there is also differences for AZO layers of light transmittance and resistivity.Current CIGS thin film solar battery group
In part, the thickness of AZO is about 800~1200nm.
AZO film is usually to be prepared using vacuum magnetron sputtering coating film equipment, and vacuum magnetron sputtering coating film equipment accounts for
Ground space is bigger, and equipment price is higher, and maintenance cost is high.On the other hand, AZO electric conductivity itself and light transmittance are limited to
Negative correlativing relation, i.e. the thickness of AZO is bigger, and electric conductivity is better, but transmitance is lower simultaneously, causes under state-of-the-art, AZO
Thickness need to reach 800~1200nm, can just take into account preferable electric conductivity and transmitance.In addition, the property of thin film of AZO relies on
In the structure and component of AZO target, and reliable, stable preparation process is required, requires preparation process high, preparation hardly possible
Degree is big.
Summary of the invention
For the technical problems in the prior art, the invention proposes a kind of copper indium gallium selenium solar cell components
Production method reduces the thickness of transparency conducting layer and the requirement to preparation process.
One aspect of the present invention provides a kind of production method of copper indium gallium selenium solar cell component, comprising:
Molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide film are sequentially formed on substrate；
The method shifted by hot padding, is transferred to eva film surface for graphene-based laminated film, wherein graphene
Based coextruded film includes graphene film and the nano wire that is arranged on graphene film；
It is thin that the molybdenum layer plated film, CIGS thin-film, cadmium sulfide are encapsulated using the eva film with graphene composite film
Film and intrinsic zinc oxide film.Wherein, the method also includes:
Spraying or spin coating metal nanometer line network structure synthesize the graphene-based THIN COMPOSITE on graphene film
Film.
Wherein, the graphene film includes single layer or few layer graphene film, the graphene film with a thickness of 0~
1nm。
Wherein, the graphene-based laminated film with a thickness of 0~200nm.
Wherein, described that molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide are sequentially formed on substrate
After film, further includes:
Vacuum magnetic-control sputtering deposits AZO to intrinsic zinc oxide film, forms AZO layers, AZO layers of thickness is 20~400nm.
Wherein, the nano wire includes non pinetallic nano line.
Wherein, the non pinetallic nano line includes carbon nanotube.
Wherein, the nano wire includes at least one metal nanometer line.
Wherein, the one side of intrinsic zinc oxide film is arranged in the nano wire.
Wherein, the nano wire is arranged far from the one side of intrinsic zinc oxide film.
Wherein, described that molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide are sequentially formed on substrate
Film, comprising:
It deposits on molybdenum to substrate, forms molybdenum layer plated film；
Copper, indium, gallium, selenium to molybdenum layer plated film are deposited, CIGS thin-film is formed；
Cadmium sulfide is deposited to CIGS thin-film, forms cadmium sulphide membrane；
Deposition intrinsic zinc oxide forms intrinsic zinc oxide film to cadmium sulphide membrane.
The production method of copper indium gallium selenium solar cell component involved in the embodiment of the present invention, graphene-based laminated film
Thickness≤200nm, the thickness for being about 800~1200nm compared with AZO film in the prior art, thickness is obviously thinning, graphite
The light transmittance of alkenyl laminated film may be up to 94%, while resistivity is lower than 8 Ω/sq, have excellent light transmittance and low resistance
Rate, performance is significantly better than AZO film, and makes graphene-based laminated film using the method for spraying or spin coating, reduces work
Skill difficulty.
Detailed description of the invention
In the following, the preferred embodiment of the present invention will be described in more detail in conjunction with attached drawing, in which:
Fig. 1 is the structural schematic diagram of copper indium gallium selenium solar cell component according to an embodiment of the invention；
Fig. 2 is the structural schematic diagram of copper indium gallium selenium solar cell component according to another embodiment of the invention；
Fig. 3 is the flow chart element of the production method of copper indium gallium selenium solar cell component according to an embodiment of the invention
Figure；And
Fig. 4 is the flow chart element of the production method of copper indium gallium selenium solar cell component according to an embodiment of the invention
Figure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the following detailed description, the specific embodiment for being used to illustrate the application as the application a part may refer to
Each Figure of description.In the accompanying drawings, similar appended drawing reference describes substantially similar component in different drawings.This Shen
Each specific embodiment please has carried out description detailed enough following, so that having the general of ability domain-dependent knowledge and technology
Logical technical staff can implement the technical solution of the application.It should be appreciated that can also be using other embodiments or to the application
Embodiment carry out structure, logic or electrical property change.
Fig. 1 is the structural schematic diagram of copper indium gallium selenium solar cell component according to an embodiment of the invention, such as Fig. 1
Shown, copper indium gallium selenium solar cell component includes: substrate 1, and back electrode 2 on substrate 1 is arranged, and is arranged on back electrode 2
Light absorbing layer 3, the buffer layer 4 on light absorbing layer 3 is set, the Window layer on buffer layer 4 is set, is arranged in Window layer
EVA layer 7, and the glassy layer 8 being arranged on EVA layer 7.
Wherein, Window layer includes i~ZnO film i.e. resistive formation 5 and transparency conducting layer 6, and transparency conducting layer 6 includes that setting exists
Graphene-based laminated film on resistive formation 5, in one embodiment of the invention, graphene-based laminated film includes: graphite
Alkene film and the nano wire being arranged on graphene film.Wherein graphene film is single layer or few layer graphene film, graphite
Alkene film with a thickness of 0~1nm.The light transmittance of graphene-based laminated film may be up to 94%, while resistivity is lower than 8 Ω/sq,
Performance is significantly better than AZO film performance, has excellent translucency and low-resistivity.
Single-layer graphene (Graphene): refer to by one layer with the periodical compact reactor of benzene ring structure (i.e. hexagonal honeycomb structure)
A kind of two-dimentional carbon material that long-pending carbon atom is constituted, generally 0.33nm.
Few layer graphene (Few~layer): refer to periodical with benzene ring structure (i.e. hexagonal honeycomb structure) by 3~10 layers
A kind of two-dimentional carbon materials that closelypacked carbon atom is constituted with different way of stacking (including ABC stacking, ABA stacking etc.) stacking
Material.
According to one embodiment of present invention, nano wire be network structure nano wire, wherein nano wire may include to
A kind of few metal nanometer line, is also possible at least one non pinetallic nano line, such as carbon nanotube.
Copper indium gallium selenium solar cell component involved in the embodiment of the present invention, by copper indium gallium selenium solar cell system
Graphene-based laminated film is introduced during standby and serves as transparency conducting layer, and effective raising copper indium gallium selenium solar cell component is saturating
The translucency and electric conductivity of bright conductive layer, improve the transfer efficiency of copper indium gallium selenium solar cell component.
Fig. 2 show the structural representation of copper indium gallium selenium solar cell component according to another embodiment of the invention
Figure, as shown in Fig. 2, transparency conducting layer further includes AZO layer 9, the thickness of AZO layer 9 is 0~400nm, still, is implemented in the present invention
The thickness of AZO film involved in example is not limited to 0~400nm, as long as the overall performance of AZO and/or graphene-based laminated film
Better than the performance of the AZO layer under prior art processes thickness condition, the thickness of both AZO and/or graphene-based laminated film, or
Any one thick bottom of person just falls into protection scope of the present invention.
Further, AZO layer 9 is arranged on resistive formation, nano wire grid structure setting in the one side close to resistive formation 5,
Alternatively, nano wire grid structure setting is in the one side far from resistive formation 5, to this, the present invention is not specifically limited.
Nano wire far from resistive formation compared to close to resistive formation while, be transferred to using thermal marking method
During eva film, reduce damage of the high temperature to metal nanometer line, while also reducing technology difficulty.
Fig. 3 is the flow chart element of the production method of copper indium gallium selenium solar cell component according to an embodiment of the invention
Figure；As shown in figure 3, using graphene-based laminated film as the specific implementation of the preceding electrode of copper indium gallium selenium solar cell component
Journey is as follows:
S110 prepares back electrode 2: in clean glass surface, molybdenum film is prepared using vacuum magnetic-control sputtering method, as
The back electrode layer of battery chip, film thickness are 300~500nm, wherein glass, that is, substrate 1.
S120 prepares light absorbing layer 3: Co-evaporated Deposition method or magnetron sputtering selenizing method is utilized, in Mo layer surface
Deposit CIGS thin-film, as light absorbing layer, 2~3 μm of film thickness.
S130 prepares buffer layer 4: depositing 30~80nm thickness on CIGS thin-film surface using chemical thought method
CdS film, as buffer layer.
S140 prepares Window layer, comprising:
S141 is thin in i~ZnO that CdS film surface deposition thickness is 50~100nm using vacuum magnetic-control sputtering method
Film 5.
This optional step further include:
S142 deposits AZO film on 5 surface of i~ZnO film using vacuum magnetic-control sputtering method, with a thickness of 50~
400nm；
S150, the method shifted using hot padding, is transferred to 7 surface of eva film for graphene-based laminated film；
S160 is prepared the eva film of containing graphene based coextruded film as copper-indium-galliun-selenium film solar cell component
It is thin to encapsulate the molybdenum layer plated film, copper indium gallium selenide using the eva film with graphene composite film for EVA encapsulating film in the process
Film, cadmium sulphide membrane and intrinsic zinc oxide film.Subsequent encapsulation process is completed, copper-indium-galliun-selenium film solar cell group is obtained
Part, as depicted in figs. 1 and 2.
In step S150, if graphene composite film is transferred on intrinsic zinc oxide film, at present relatively at
Ripe shifting process is solution secondary transfer method, but intrinsic zinc oxide is contacted with solution, it is easy to cause its physical chemistry
Qualitative change, therefore graphene-based laminated film is transferred to by eva film surface using the method for hot padding transfer, then thin with EVA
Film encapsulation, to realize in graphene-based laminated film setting to intrinsic zinc oxide film, the object of intrinsic zinc oxide will not be caused
The variation of Physicochemical property.
Further, the thickness of graphene composite film is very thin only less than 1nm, if directly overlying intrinsic oxygen
Change on zinc film, it is easy to cause graphene film rupture, fold etc., with the method that hot padding is shifted by graphene-based THIN COMPOSITE
Film transfer can solve this problem to eva film surface.
Fig. 4 is the flow chart element of the production method of copper indium gallium selenium solar cell component according to an embodiment of the invention
Figure, as shown in figure 4, the method, further includes the steps that making graphene-based laminated film before step S150:
S143: preparing one layer of metal nanometer line network structure above with the method for spraying or spin coating in graphene film,
Nanowire diameter≤100nm, synthesizing graphite alkene based coextruded film, thickness≤200nm, wherein graphene film single layer or few layer
Graphene film is usually to be grown in copper foil surface, thickness≤1nm.
In embodiments of the present invention, thickness≤200nm of the graphene-based laminated film, compared in the prior art
The thickness that AZO film is about 800~1200nm, thickness is obviously thinning, and makes graphene using the method for spraying or spin coating
Based coextruded film reduces technology difficulty, while the light transmittance of graphene-based laminated film may be up to 94%, while resistivity is low
In 8 Ω/sq, there is excellent light transmittance and low-resistivity, performance is significantly better than AZO film.
According to another embodiment of the invention, the production method of copper indium gallium selenium solar cell component, comprising:
S201 prepares back electrode: carrying out molybdenum layer plated film, the molybdenum layer to the glass substrate after cleaning using magnetron sputtering technique
With a thickness of 200~500nm, film rectangular resistance is 500~1000m Ω.
S202 prepares light absorbing layer: forming Cu (In, Ga) Se2 light absorption using coevaporation technology copper steam-plating, indium, gallium, selenium
Layer, light absorbing layer is with a thickness of 1.8~2.5 μm, and the ratio of copper and triels is between 0.75~1.Gallium and triels
Ratio between 0.2~0.5.
S203 prepares buffer layer: cadmium sulfide is prepared using chemical water bath, as buffer layer.It is with a thickness of 20~80nm.
S204 prepares Window layer: preparing intrinsic zinc oxide (i~ZnO) resistive formation using magnetron sputtering, then execute
Graphene-based laminated film is transferred on copper indium gallium selenium solar cell chip by S205, forms Window layer.
In other embodiments of the invention, S205 further include:
Aluminium-doped zinc oxide (AZO) layer is prepared using magnetron sputtering, resistive formation, graphene-based laminated film and AZO layers are altogether
With as Window layer.Wherein, AZO is with a thickness of 50~400nm.
S206 prepares eva film and encapsulates entire film layer；In the preparation process of battery component, graphite is encapsulated with eva film
Alkenyl laminated film avoids the change of properties of graphene-based composite material.
S207 completes the preparation to solar cell module by techniques such as eva film laying, laminations.
The production method of copper indium gallium selenium solar cell component involved in the embodiment of the present invention, by copper indium gallium selenide too
Graphene-based film, which is introduced, in positive energy battery component preparation process serves as transparency conducting layer, it is effective to improve CIGS thin-film too
The translucency and electric conductivity of positive energy battery component transparency conducting layer improve the conversion effect of copper indium gallium selenium solar cell component
Rate, and the preparation difficulty of transparency conducting layer is reduced, while the preparation for also reducing copper indium gallium selenium solar cell component is difficult
Degree.
Above-described embodiment is used for illustrative purposes only, and is not limitation of the present invention, in relation to the general of technical field
Logical technical staff can also make a variety of changes and modification without departing from the present invention, therefore, all equivalent
Technical solution also should belong to scope disclosed by the invention.
Claims (11)
1. a kind of production method of copper indium gallium selenium solar cell component characterized by comprising
Molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide film are sequentially formed on substrate；
Graphene-based laminated film is transferred to eva film surface, wherein graphene-based laminated film include graphene film and
Nano wire on graphene film is set；
Using the eva film with graphene composite film encapsulate the molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and
Intrinsic zinc oxide film.
2. the production method of copper indium gallium selenium solar cell component according to claim 1, which is characterized in that the method
Further include:
In spraying or spin coating metal nanometer line network structure to graphene film, the graphene-based laminated film is synthesized.
3. the production method of copper indium gallium selenium solar cell component according to claim 1, which is characterized in that the graphite
Alkene film includes single layer or few layer graphene film, the graphene film with a thickness of 0~1nm.
4. according to claim 1, the production method of 2 or 3 described in any item copper indium gallium selenium solar cell components, feature exist
In, the graphene-based laminated film with a thickness of 0~200nm.
5. the production method of copper indium gallium selenium solar cell component according to claim 1, which is characterized in that on substrate
Sequentially form molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide film, further includes:
AZO is deposited to intrinsic zinc oxide film, forms AZO layers, AZO layers of thickness is 20~400nm.
6. the production method of copper indium gallium selenium solar cell component according to claim 2, which is characterized in that the nanometer
Line includes non pinetallic nano line.
7. the production method of copper indium gallium selenium solar cell component according to claim 6, which is characterized in that the non-gold
Belonging to nano wire includes carbon nanotube.
8. the production method of copper indium gallium selenium solar cell component according to claim 2, which is characterized in that the nanometer
Line includes at least one metal nanometer line.
9. the production method of copper indium gallium selenium solar cell component according to claim 2, which is characterized in that the nanometer
Line is positioned close to the one side of intrinsic zinc oxide film.
10. the production method of copper indium gallium selenium solar cell component according to claim 2, which is characterized in that described to receive
Rice noodles are arranged far from the one side of intrinsic zinc oxide film.
11. the production method of copper indium gallium selenium solar cell component according to claim 8, which is characterized in that it is described
Molybdenum layer plated film, CIGS thin-film, cadmium sulphide membrane and intrinsic zinc oxide film are sequentially formed on substrate, comprising:
It deposits on molybdenum to substrate, forms molybdenum layer plated film；
Copper, indium, gallium, selenium to molybdenum layer plated film are deposited, CIGS thin-film is formed；
Cadmium sulfide is deposited to CIGS thin-film, forms cadmium sulphide membrane；
Deposition intrinsic zinc oxide forms intrinsic zinc oxide film to cadmium sulphide membrane.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810401318.9A CN110416326A (en) | 2018-04-28 | 2018-04-28 | A kind of production method of copper indium gallium selenium solar cell component |
| PCT/CN2018/106071 WO2019205458A1 (en) | 2018-04-28 | 2018-09-18 | Fabrication method for copper indium gallium selenium solar cell assembly and copper indium gallium selenium solar cell assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810401318.9A CN110416326A (en) | 2018-04-28 | 2018-04-28 | A kind of production method of copper indium gallium selenium solar cell component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110416326A true CN110416326A (en) | 2019-11-05 |
Family
ID=68357024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810401318.9A Pending CN110416326A (en) | 2018-04-28 | 2018-04-28 | A kind of production method of copper indium gallium selenium solar cell component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110416326A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130044850A (en) * | 2011-10-25 | 2013-05-03 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| CN103489945A (en) * | 2012-06-13 | 2014-01-01 | 金坛正信光伏电子有限公司 | Current-collecting energy-gathering netlike bypass solar cell |
| CN103943697A (en) * | 2014-03-28 | 2014-07-23 | 京东方科技集团股份有限公司 | Flexible and transparent solar cell and preparation method thereof |
| CN104751934A (en) * | 2015-03-18 | 2015-07-01 | 西交利物浦大学 | Flexible transparent conducting thin film based on graphene sandwich structure and preparation method thereof |
| CN105870214A (en) * | 2016-04-14 | 2016-08-17 | 董友强 | CIGS thin film solar cell |
-
2018
- 2018-04-28 CN CN201810401318.9A patent/CN110416326A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130044850A (en) * | 2011-10-25 | 2013-05-03 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| CN103489945A (en) * | 2012-06-13 | 2014-01-01 | 金坛正信光伏电子有限公司 | Current-collecting energy-gathering netlike bypass solar cell |
| CN103943697A (en) * | 2014-03-28 | 2014-07-23 | 京东方科技集团股份有限公司 | Flexible and transparent solar cell and preparation method thereof |
| CN104751934A (en) * | 2015-03-18 | 2015-07-01 | 西交利物浦大学 | Flexible transparent conducting thin film based on graphene sandwich structure and preparation method thereof |
| CN105870214A (en) * | 2016-04-14 | 2016-08-17 | 董友强 | CIGS thin film solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106057919B (en) | Solar cell with the metal gate by electroplating manufacture | |
| CN102569442B (en) | Thin film solar cell and manufacturing method thereof | |
| CN102201479B (en) | Thin film photovoltaic cell | |
| Lee et al. | Robust nanoscale contact of silver nanowire electrodes to semiconductors to achieve high performance chalcogenide thin film solar cells | |
| Li et al. | The transparent SnO/ZnO quantum dots/SnO2 pn junction towards the enhancement of photovoltaic conversion | |
| US20140352751A1 (en) | Solar cell or tandem solar cell and method of forming same | |
| KR20130044850A (en) | Solar cell and method of fabricating the same | |
| CN103620794B (en) | Solaode and manufacture method thereof | |
| CN104272469A (en) | Solar cell apparatus and method of fabricating the same | |
| CN105742390A (en) | Laminated thin film solar battery and preparation method thereof | |
| CN102412316B (en) | As the anisotropic conductive layer of back contacts in film photovoltaic device | |
| CN108172645A (en) | A kind of CIGS/CdTe lamination solar cells and preparation method thereof | |
| CN208570640U (en) | A kind of copper indium gallium selenium solar cell component | |
| CN105097980B (en) | Thin-film solar cells and its manufacturing method | |
| CN105244394B (en) | A kind of CIGS based thin film solar cells and preparation method thereof | |
| CN103222068A (en) | Solar cell and method for manufacturing the same | |
| CN103339741B (en) | Solar cell device and its manufacture method | |
| US20140224312A1 (en) | Deposition of a high surface energy thin film layer for improved adhesion of group i-iii-vi2 solar cells | |
| CN104377252B (en) | Flexible copper-based chalcogenide semiconductor thin-film solar cell window layer structure | |
| CN105845768A (en) | Solar battery, and preparation method and device of solar battery | |
| WO2013096109A1 (en) | Transparent conducting layer for solar cell applications | |
| CN110416326A (en) | A kind of production method of copper indium gallium selenium solar cell component | |
| CN110416346A (en) | A kind of copper indium gallium selenium solar cell component and preparation method thereof | |
| JP2006080371A (en) | Solar cell and its manufacturing method | |
| CN106981532A (en) | A kind of flexible CIGS polycrystalline thin-film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210413 Address after: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210915 Address after: 201203 3rd floor, no.665 Zhangjiang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Shanghai zuqiang Energy Co.,Ltd. Address before: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant before: Shenzhen Zhengyue development and Construction Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191105 |