CN110398528A - A kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT) - Google Patents

A kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT) Download PDF

Info

Publication number
CN110398528A
CN110398528A CN201910497417.6A CN201910497417A CN110398528A CN 110398528 A CN110398528 A CN 110398528A CN 201910497417 A CN201910497417 A CN 201910497417A CN 110398528 A CN110398528 A CN 110398528A
Authority
CN
China
Prior art keywords
reservoir
thin film
antituberculosis drugs
tft
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910497417.6A
Other languages
Chinese (zh)
Other versions
CN110398528B (en
Inventor
林鹏
陈俊鑫
胡进
程铁栋
魏伟伟
曾燮榕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN201910497417.6A priority Critical patent/CN110398528B/en
Publication of CN110398528A publication Critical patent/CN110398528A/en
Application granted granted Critical
Publication of CN110398528B publication Critical patent/CN110398528B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)

Abstract

The present invention discloses a kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT), described device includes substrate, the substrate surface and the successively source electrode of laid out in parallel, indium gallium zinc oxygen thin film channel layer and drain electrode are set, the reservoir on the source electrode and drain electrode surface is set, the bottom surface of the reservoir is the indium gallium zinc oxygen thin film channel layer, electrolyte is stored in the reservoir, inserted with gate electrode in the electrolyte, the source electrode, drain electrode and gate electrode are electrically connected same electrical signal detection device.The features such as antituberculosis drugs screening plant provided by the invention has high sensitivity, detection speed fast, and stability is strong, structure is simple low with operating voltage is highly suitable for screening antituberculosis drugs.

Description

A kind of antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT) and Method
Technical field
The present invention relates to field of biosensors more particularly to a kind for the treatment of tuberculosis based on liquid grid-type IGZO thin film transistor (TFT) Class medicament screening apparatus and method.
Background technique
Tuberculosis is a kind of several chronic diseases as caused by mycobacterium tuberculosis, relatively conventional with pulmonary tuberculosis, is had every year Millions of people suffers from tuberculosis, is the ninth-largest cause of the death in the whole world.Know from " report of the whole world 2018WHO tuberculosis ", 2017, is estimated to be 10000000 people's new infection tuberculosis: 5,800,000 males, 3,200,000 women, 1,000,000 children, wherein China is estimated to be 88.9 ten thousand people's new infections Tuberculosis.In addition, drug resistance tuberculosis is the public health crisis more to merit attention, estimate that the whole world in 2017 there are 45.8 ten thousand people to suffer from Multiple-drug resistance tuberculosis disease (MDR-TB), mycobacterium tuberculosis is to the enhancing of first-line drug drug resistance so that curing becomes very spine Hand.It, every year can be to avoid millions of people's death, in early diagnosis detection and newly although diagnosis lungy and successful treatment Very big gap is still had in type medicament research and development compared with expected.
Macrophage is the main parasitic place of mycobacterium tuberculosis, frequently as research object lungy.General tuberculosis After mycobacteria invades human body, macrophage can be swallowed.Mycobacterium tuberculosis is by preventing the fusion of phagolysosome, dropping Low macrophage escapes the immunosurveillance and attack of macrophage to approach such as the sensibility of stimulation responses, allows in macrophage Intracellular survival and proliferation are prepared for new round infection.By understanding the mechanism of macrophage and tubercle bacillus, both may be used To provide new approaches for prevention and treatment lungy, and help to develop newtype drug.
Efficiently easily drug screening method is the research and development vital ring of newtype drug.Currently used drug screening Experimental technique has affine flicker detection method (SPA), time-resolved fluorescence Resonance energy transfer detection method (TR-FRET) etc..These On the one hand detection technique requires more harshness to experiment condition, generally require some specific large-scale experiment equipment and special examination Agent;Another aspect experimentation is quite cumbersome, and to the more demanding of operator.In addition, current most drugs are screened Technology is all confined to end-point method detection, is difficult to realize the tracking and detection to entire drug effect process.
In recent years, indium gallium zinc oxygen (IGZO) thin film transistor (TFT) is because it is high with mobility, on-off ratio is big, job stability By force, can low temperature preparation and the good characteristic of bio-compatibility, received more and more attention in biochemistry sensory field. Have been reported that IGZO thin film transistor (TFT) for various biomolecule detections such as DNA detection, enzyme detection and Ag-Ab detections.It is examined Surveying principle is the size for inducing charge in active layer by charge entrained by biomolecule, and then changing channel current.
IGZO thin film transistor (TFT) biosensor have high sensitivity, detection speed are fast, high throughput micro-scale detection can be achieved and The advantages such as real-time monitoring hold promise as the detection platform of drug screening.However, the IGZO thin film transistor (TFT) biology reported at present There are still some shortcomings for sensor, in terms of being mainly manifested in following two: first is that existing IGZO thin film transistor (TFT) biology passes The operating voltage of sensor is very high (generally tens volts);Second is that the device junction of existing IGZO thin film transistor (TFT) biosensor Structure is complex.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide one kind to be based on liquid grid-type IGZO film crystal The antituberculosis drugs screening plant and method of pipe, it is intended to it is multiple to solve the existing medicament screening apparatus structure based on thin film transistor (TFT) The problem that miscellaneous and operating voltage is higher, detection sensitivity is poor.
Technical scheme is as follows:
A kind of antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT), wherein including substrate, be arranged in institute Substrate surface and the successively source electrode of laid out in parallel, indium gallium zinc oxygen thin film channel layer and drain electrode are stated, is arranged in the source electrode With the reservoir of drain electrode surface, the bottom surface of the reservoir is the indium gallium zinc oxygen thin film channel layer, the reservoir memory Contain electrolyte, inserted with gate electrode in the electrolyte, the source electrode, drain electrode and gate electrode are electrically connected same telecommunications Number detector.
The antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT), wherein in the reservoir Electrolyte be cell culture fluid, the cell culture fluid be the DMED culture solution containing 10%FBS.
The antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT), wherein the reservoir material Material is dimethyl silicone polymer.
The antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT), wherein the electric signal inspection Survey the probe station that device includes semi-conductor test instrument and is electrically connected with the semi-conductor test instrument.
The antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT), wherein the substrate is glass One of glass substrate, polyimide substrate or dimethyl silicone polymer substrate.
A kind of screening technique of antituberculosis drugs screening plant, which comprises the following steps:
Set the voltage V between source electrode and drain electrodeDSAnd the voltage V between source electrode and gate electrodeGS, into reservoir Cell culture fluid is added, channel current is measured by electrical signal detection device and is denoted as I1
Macrophage is added into reservoir and carries out the culture predetermined time, channel current is measured by electrical signal detection device and is denoted as I2, I2Less than I1
Tubercle bacillus is added into reservoir and carries out cell infection to the predetermined time, channel current is measured by electrical signal detection device And it is denoted as I3, I3Greater than I2
Drug to be detected is added into reservoir to continue to cultivate the predetermined time, channel current is measured by electrical signal detection device and is remembered For I4If I4Less than I3, then determine that the drug to be detected is antituberculosis drugs.
The antituberculosis drugs screening technique, wherein if I4More than or equal to I3, then determine that the drug to be detected is Non- antituberculosis drugs.
The antituberculosis drugs screening technique, wherein the voltage V between the source electrode and drain electrodeDS=0.3V。
The antituberculosis drugs screening technique, wherein the voltage V between the source electrode and gate electrodeGS=-0.5- 1V。
The antituberculosis drugs screening technique, wherein the addition macrophage into reservoir cultivate pre- It fixes time, channel current is measured by electrical signal detection device and is denoted as I2The step of include:
Macrophage is added into the reservoir for be stored with cell culture fluid and is put into cell incubator and is cultivated, setting temperature Degree is 37 °C, gas concentration lwevel 5%;
When culture is paved with indium gallium zinc oxygen channel layer to macrophage, then channel current at this time is measured by electrical signal detection device And it is denoted as I2
The utility model has the advantages that the antituberculosis drugs screening plant tool provided by the invention based on liquid grid-type IGZO thin film transistor (TFT) There is high sensitivity, detect the features such as speed is fast, and stability is strong, structure is simple low with operating voltage, it is anti-to be highly suitable for screening Tuberculosis class drug.Drug is converted to the change of electric signal by the antituberculosis drugs screening plant to infection cell mechanism Change, and electric signal can directly be read from electrical signal detection device, be evaluated by change in electric degree drug effect, this will Previous operating process is greatly simplified, and of less demanding to experiment condition.In addition, liquid grid-type IGZO thin film transistor (TFT) pair Drug effect process can be monitored in real time, compensate for the deficiency of conventional medicament screening technique well.
Detailed description of the invention
Fig. 1 is that a kind of structure of the antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT) of the present invention is shown It is intended to.
Fig. 2 is that a kind of work of the antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT) of the present invention is former Reason.
Fig. 3 is the flow diagram of antituberculotic screening in the embodiment of the present invention 1.
Fig. 4 is the change in electric figure in the embodiment of the present invention 1 in drug screening process.
Specific embodiment
The present invention provides a kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT), is Keep the purpose of the present invention, technical solution and effect clearer, clear, the present invention is described in more detail below.It should manage Solution, the specific embodiments described herein are merely illustrative of the present invention, is not intended to limit the present invention.
Referring to Fig. 1, Fig. 1 is a kind of antituberculosis drugs based on liquid grid-type IGZO thin film transistor (TFT) provided by the invention The structural schematic diagram of screening plant preferred embodiment, wherein as shown, the antituberculosis drugs screening plant includes substrate 1,1 surface of substrate and the successively source electrode 2 of laid out in parallel, indium gallium zinc oxygen thin film channel layer 3 and drain electrode 4 are set, if The reservoir 5 on 4 surface of the source electrode 2 and drain electrode is set, the bottom surface of the reservoir 5 is the indium gallium zinc oxygen channel layer 3, Be stored with electrolyte 6 in the reservoir 5, inserted with gate electrode 7 in the electrolyte, the source electrode 2, drain electrode 4 and Gate electrode 7 is electrically connected same electrical signal detection device 8.
Antituberculosis drugs screening plant provided in this embodiment based on liquid grid-type IGZO thin film transistor (TFT) is using electrolysis Liquid is instead of common solid dielectric layer in traditional IGZO thin film transistor (TFT) biosensor.Ion in electrolyte is easier Separation of charge is carried out under the action of electric field, when applying a positive gate voltage, accumulation of positive ions to indium gallium zinc oxygen (IGZO) channel layer On, it will increase the electron concentration in indium gallium zinc oxygen channel layer, so that the channel current of device increases rapidly, working principle is as schemed Shown in 2.Therefore, the work of the antituberculosis drugs screening plant provided in this embodiment based on liquid grid-type IGZO thin film transistor (TFT) Voltage in 1 V or so, the biological detection that dramatically reduces the power consumption of device, and be more advantageous under solution environmental and The practical application of sensor.
In some embodiments, the antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT) is logical Following methods are crossed to be prepared:
The deposit metal electrodes on substrate first by way of hot evaporation, as an example, can deposit respectively 10nm Cr and The Au of 100nm prepares the Cr/Au electrode that channel width-over-length ratio is 30:1, the source electrode and drain electrode as transistor;Then lead to The physical vapour deposition (PVD)s mode such as extra pulse laser deposition or magnetron sputtering deposition thickness between source electrode and drain electrode is 60nm left Right indium gallium zinc oxygen (IGZO) film is as indium gallium zinc oxygen channel layer;
Prepare reservoir on the source electrode and drain electrode surface, the reservoir prepared by dimethyl silicone polymer (PDMS) and At, the volume and shape of the reservoir can be adjusted according to actual needs, the bottom of reservoir through oxygen plasma at Reason, can be bonded more preferably with glass substrate, guarantee that the solution in reservoir does not outflow.The reservoir be both needed to before use into Row cleaning treatment and ultraviolet irradiation sterilization treatment avoid impurity or other pathogenic microorganisms from influencing testing result;
Electrolyte is added into the reservoir, then selects metals or other conductive film material conducts such as Au, Ag, Pt, ITO Gate electrode, the shape of gate electrode can be Filamentous, rodlike or sheet, the gate electrode are placed in electrolyte, then by source electrode, Drain electrode and gate electrode are electrically connected with external electrical signal detection device, are obtained described based on liquid grid-type IGZO film crystal The antituberculosis drugs screening plant of pipe.
In some embodiments, the substrate is glass substrate, polyimide substrate or dimethyl silicone polymer substrate One of, but not limited to this.
In some embodiments, the electrical signal detection device include semi-conductor test instrument and with the semiconductor test The probe station of instrument electrical connection.In the present embodiment, the fixture on the probe station passes liquid grid-type IGZO thin film transistor (TFT) biology Source electrode, drain electrode and the gate electrode of sensor are connected on semi-conductor test instrument.Semi-conductor test instrument will be in source electrode and leakage Apply voltage V between electrodeDSAnd apply voltage V between gate electrode and source electrodeGS, and the channel current I of deviceDSIt can be from half It is directly read on conductor tester.
In some embodiments, cell culture fluid is also stored in the reservoir, the cell culture fluid is containing 10% The DMED culture solution of FBS.When macrophage adherent growth in the reservoir for being stored with cell culture fluid in reservoir, by It is negatively charged in Macrophage Surface in the solution, the electron concentration in indium gallium zinc oxygen (IGZO) thin film channel can be reduced, so that ditch Road electric current IDSReduce, after macrophage is infected, activity and adhered state are deteriorated, so that channel current IDSIncrease, when After applying drug, macrophage activity and adhered state are restored, then channel current IDSIt can reduce.In the present embodiment, lead to The variation that mechanism of the drug to infection cell can be converted to electric signal by the antituberculosis drugs screening plant is crossed, and it is electric Signal can directly be read from electrical signal detection device, be evaluated by change in electric degree drug effect, this will greatly Previous operating process is simplified, and of less demanding to experiment condition.
From manufacture craft, the production of the liquid grid-type IGZO thin film transistor (TFT) is more simple, because only needing two steps Device can be prepared, that is, prepares source electrode and drain electrode and deposition indium gallium zinc oxygen film, this advantageously reduces cost, and popularization is answered With.The liquid grid-type IGZO thin film transistor (TFT) Antituberculous class drug screens in which can realize sensitive fast, economical, compared to tradition Drug screening technology, have in terms of screening sensitivity and detection efficiency and significantly improve.And biological respinse is directly turned It is melted into the variation of electric signal, the variation of electric signal can be directly read from semi-conductor test instrument, is not necessarily to other macro-organism instrument Device equipment participates in, this greatly reduces the requirement to technical staff.It is provided by the invention to be based on liquid grid-type IGZO thin film transistor (TFT) Antituberculosis drugs screening plant, can make up well conventional medicament screening technique drug effect process cannot be carried out it is real When the deficiency that monitors.
In some embodiments, a kind of antituberculosis drugs sieve based on liquid grid-type IGZO thin film transistor (TFT) is additionally provided Choosing method, which comprises the following steps:
Voltage V between S10, setting source electrode and drain electrodeDSAnd the voltage V between source electrode and gate electrodeGS, to liquid storage Cell culture fluid is added in slot, channel current is measured by electrical signal detection device and is denoted as I1
S20, into reservoir, addition macrophage carries out the culture predetermined time, measures channel current simultaneously by electrical signal detection device It is denoted as I2, I2Less than I1
S30, the tubercle bacillus progress cell infection predetermined time is added into reservoir, channel electricity is measured by electrical signal detection device It flows and is denoted as I3, I3Greater than I2
S40, be added into reservoir drug to be detected continue cultivate the predetermined time, channel current is measured by electrical signal detection device And it is denoted as I4If I4Less than I3, then determine that the drug to be detected is antituberculosis drugs;If I4More than or equal to I3, then determine institute Stating drug to be detected is non-antituberculosis drugs.
In the present embodiment, when using the antituberculosis drugs screening of the invention based on liquid grid-type IGZO thin film transistor (TFT) When device screens drug, the parameter on semiconductor analysis instrument is first set, is respectively set between source electrode and drain electrode Voltage VDSAnd the voltage V between source electrode and gate electrodeGS.Preferably, since the present invention uses electrolyte instead of biography Common solid dielectric layer in system IGZO thin film transistor (TFT) biosensor, and the ion in electrolyte is easier the work in electric field Separation of charge is carried out under, therefore can set the voltage V between the source electrode and drain electrodeDS=0.3V;The source electrode and grid Voltage V between electrodeGS=-0.5-1V。
In some embodiments, the macrophage that is added into reservoir carries out the culture predetermined time, passes through telecommunications Number detector measures channel current and is denoted as I2The step of include: into the reservoir for be stored with cell culture fluid be added macrophage it is thin Born of the same parents and being put into cell incubator cultivate, and set temperature is 37 °C, gas concentration lwevel 5%;When culture to macrophage When being paved with indium gallium zinc oxygen channel layer, then channel current at this time is measured by electrical signal detection device and be denoted as I2
Below by specific embodiment the present invention will be further explained explanation:
Embodiment 1
1, the preparation process of the antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT) the following steps are included:
The preparation of the source electrode and drain electrode of transistor: glass substrate is after Piranha solution is handled, AZ1512 photoetching in spin coating Glue is transferred to glass in 100 °C of warm table front baking 10 minutes, then by designed array device figure by way of photolithographic exposure On glass, after end exposure, develop 45 seconds in AZ developer solution, then rinse glass with deionized water and remove remaining developer solution, By hot evaporation deposit metal electrodes after being dried with nitrogen, the Au of the Cr and 100 nm of 10 nm are deposited respectively, and metal Cr increases metal The adhesiveness of Au and glass, glass is put remove after having deposited in acetone, and finally obtaining channel width-over-length ratio is 30:1's Source electrode and drain electrode;
The preparation of active layer indium gallium zinc oxygen (IGZO) film: the place that deposition is not needed in above-mentioned electrode is carried out with high temperature gummed tape Encapsulation, then deposited to indium gallium zinc oxygen (IGZO) on packaged electrode by pulse laser depositional mode, it is taken after deposition Device out removes high temperature gummed tape, puts into corundum crucible with cover, anneals 2 hours at 400 °C of Muffle furnace, finally obtains IGZO Film transistor device;
The preparation of reservoir: dimethyl silicone polymer (PDMS) and curing agent, the two mixing are weighed respectively for 10:1 in mass ratio After mixing evenly, it vacuumize until fluid is transparent to clarify not bubbles, by dimethyl silicone polymer (PDMS) It pours into designed mold, the mold equipped with dimethyl silicone polymer (PDMS) is placed on warm table and heats 30 points for 80 °C Clock, heating can accelerate the solidification of dimethyl silicone polymer (PDMS).Then it needs to the dimethyl silicone polymer solidified (PDMS) it is demoulded, finally obtains reservoir;
Reservoir and device assemble: reservoir and IGZO film transistor device are carried out oxygen plasma (O2Plasma at) Reason, the two is bonded later, and the antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT) is made.
2, antituberculosis drugs screening technique based on liquid grid-type IGZO thin film transistor (TFT) the following steps are included:
Cell culture is carried out in reservoir: cleaning and ultraviolet radiation sterilization first being carried out to reservoir inside, then into reservoir The Raw macrophage of certain cell concentration is added, puts into cell incubator later, temperature and gas concentration lwevel are set, point It Wei not be 37 °C and 5 %;
The electric signal of cell adherent growth monitors: be placed in tungsten wire as gate electrode in reservoir, then by source electrode, drain electrode and Gate electrode is connected by conducting wire with semi-conductor test instrument 4200.According to cell habit, select suitable time interval into Horizontal electrical signal test.By testing transfer curve IDS-VGS, observe channel current IDSVariation to realize to cell grow shape The monitoring of state because in the solution cell surface be it is electronegative, the adherent meeting of cell is so that channel current IDSReduce.When thin After born of the same parents are paved with the entire channel portion of device, channel current IDSIt can stablize near a certain current value;
The electrical signal detection of infected cell: after cell adherent growth is paved with entire device, tubercle bacillus is added into reservoir Infection macrophage is removed, infection after a certain period of time, is cleaned multiple times reservoir with the PBS solution of 0.01M, removes thinless The tubercle bacillus that endocytosis is bitten adds the fresh DMEM culture medium containing 10%FBS, and device is put into cell culture after cleaning Case.Due to being changed by the form of mycobacterium tuberculosis infection, macrophage, activity and adhered state are deteriorated, so that channel is electric Flow IDSIncrease;
Electrical signal detection after drug-treated: apply drug to infected macrophage, drug enters cell and kills intracellular Tubercle bacillus so that cell activity and adhered state have a degree of recovery, at this time carry out electric signal test, channel electricity Flow IDSHave reduces to a certain extent.
3, with Raw macrophage frequently as the phthisical model of research, the method packet that Antituberculous class drug is screened Include following steps:
With Raw macrophage frequently as phthisical model is studied, select Raw macrophage as research object.First set The voltage V between source-drain electrode is respectively set in parameter on semiconductor analysis instrumentDS=0.3V and gate voltage VGS1V is measured from -0.5V. The step of tuberculosis drugs screen measures channel current after device is stablized as shown in figure 3, culture medium is first added in reservoirI 1 , as shown in Figure 4.Then it again by Raw macrophage culture into reservoir, is put into cell incubator and cultivates, raw macrophage is thin Born of the same parents can on indium gallium zinc oxygen (IGZO) film adherent growth, since Macrophage Surface is negatively charged, when cell is paved with entire device Channel current is reduced to after partI 2 , as shown in Figure 4.Then tubercle bacillus is added into reservoir and goes infection macrophage, infection After a certain period of time, the form of macrophage changes, and activity and adhered state are deteriorated, so that channel current is increased toI 3 , As shown in Figure 4.It is added followed by drug, after drug-treated, the activity and adhered state of macrophage have a degree of extensive It is multiple, so that channel current is reduced toI 4 , as shown in Figure 4.
In conclusion the antituberculosis drugs screening plant tool provided by the invention based on liquid grid-type IGZO thin film transistor (TFT) There is high sensitivity, detect the features such as speed is fast, and stability is strong, structure is simple low with operating voltage, it is anti-to be highly suitable for screening Tuberculosis class drug.Drug is converted to the change of electric signal by the antituberculosis drugs screening plant to infection cell mechanism Change, and electric signal can directly be read from electrical signal detection device, be evaluated by change in electric degree drug effect, this will Previous operating process is greatly simplified, and of less demanding to experiment condition.In addition, liquid grid-type IGZO thin film transistor (TFT) pair Drug effect process can be monitored in real time, compensate for the deficiency of conventional medicament screening technique well.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention Protect range.

Claims (10)

1. a kind of antituberculosis drugs screening plant based on liquid grid-type IGZO thin film transistor (TFT), which is characterized in that including substrate, The substrate surface and the successively source electrode of laid out in parallel, indium gallium zinc oxygen thin film channel layer and drain electrode are set, are arranged in institute The reservoir on source electrode and drain electrode surface is stated, the bottom surface of the reservoir is the indium gallium zinc oxygen thin film channel layer, the storage Electrolyte is stored in liquid bath, inserted with gate electrode, the source electrode, drain electrode and gate electrode electrical connection in the electrolyte Same electrical signal detection device.
2. the antituberculosis drugs screening plant according to claim 1 based on liquid grid-type IGZO thin film transistor (TFT), feature It is, the electrolyte in the reservoir is cell culture fluid, and the cell culture fluid is the DMED culture solution containing 10%FBS.
3. the antituberculosis drugs screening plant according to claim 1 based on liquid grid-type IGZO thin film transistor (TFT), feature It is, the reservoir material is dimethyl silicone polymer.
4. the antituberculosis drugs screening plant according to claim 1 based on liquid grid-type IGZO thin film transistor (TFT), feature It is, the electrical signal detection device includes semi-conductor test instrument and the probe station that is electrically connected with the semi-conductor test instrument.
5. the antituberculosis drugs screening plant according to claim 1 based on liquid grid-type IGZO thin film transistor (TFT), feature It is, the substrate is one of glass substrate, polyimide substrate or dimethyl silicone polymer substrate.
6. just like the screening technique of any antituberculosis drugs screening plant of claim 1-5, which is characterized in that including with Lower step:
Set the voltage V between source electrode and drain electrodeDSAnd the voltage V between source electrode and gate electrodeGS, into reservoir Cell culture fluid is added, channel current is measured by electrical signal detection device and is denoted as I1
Macrophage is added into reservoir and cultivates to the predetermined time, channel current is measured by electrical signal detection device and is denoted as I2, I2Less than I1
Tubercle bacillus is added into reservoir and carries out cell infection to the predetermined time, channel current is measured by electrical signal detection device And it is denoted as I3, I3Greater than I2
Drug to be detected is added into reservoir and continues culture to the predetermined time, channel current is measured simultaneously by electrical signal detection device It is denoted as I4If I4Less than I3, then determine that the drug to be detected is antituberculosis drugs.
7. antituberculosis drugs screening technique according to claim 6, which is characterized in that if I4More than or equal to I3, then determine The drug to be detected is non-antituberculosis drugs.
8. antituberculosis drugs screening technique according to claim 6, which is characterized in that the source electrode and drain electrode it Between voltage VDS=0.3V。
9. antituberculosis drugs screening technique according to claim 6, which is characterized in that the source electrode and gate electrode it Between voltage VGS=-0.5-1V。
10. antituberculosis drugs screening technique according to claim 6, which is characterized in that described to be added into reservoir Macrophage was cultivated to the predetermined time, is measured channel current by electrical signal detection device and is denoted as I2The step of include:
Macrophage is added into the reservoir for be stored with cell culture fluid and is put into cell incubator and is cultivated, setting temperature Degree is 37 °C, gas concentration lwevel 5%;
When culture is paved with indium gallium zinc oxygen channel layer to macrophage, then channel current at this time is measured by electrical signal detection device And it is denoted as I2
CN201910497417.6A 2019-06-10 2019-06-10 Liquid gate type IGZO thin film transistor-based anti-tuberculosis drug screening device and method Active CN110398528B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910497417.6A CN110398528B (en) 2019-06-10 2019-06-10 Liquid gate type IGZO thin film transistor-based anti-tuberculosis drug screening device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910497417.6A CN110398528B (en) 2019-06-10 2019-06-10 Liquid gate type IGZO thin film transistor-based anti-tuberculosis drug screening device and method

Publications (2)

Publication Number Publication Date
CN110398528A true CN110398528A (en) 2019-11-01
CN110398528B CN110398528B (en) 2022-04-12

Family

ID=68323088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910497417.6A Active CN110398528B (en) 2019-06-10 2019-06-10 Liquid gate type IGZO thin film transistor-based anti-tuberculosis drug screening device and method

Country Status (1)

Country Link
CN (1) CN110398528B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111307912A (en) * 2020-03-05 2020-06-19 苏州微湃医疗科技有限公司 Field-effect tube biosensor and preparation method thereof
CN113466301A (en) * 2021-07-29 2021-10-01 武汉大学 Biochip for rapidly screening bladder cancer markers and preparation method and application thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100053624A1 (en) * 2008-08-29 2010-03-04 Kyung-Hwa Yoo Biosensor
CN102435653A (en) * 2011-09-05 2012-05-02 湖南大学 Field effect transistor-based antibiotic medicine screening device and antibiotic medicine screening method
US20130075793A1 (en) * 2010-06-14 2013-03-28 Dai Nippon Printing Co., Ltd. Field effect transistor type biosensor
KR20130101295A (en) * 2012-03-05 2013-09-13 충남대학교산학협력단 Screening method for anti-mycobacterial drugs
CN204422470U (en) * 2015-01-07 2015-06-24 融智生物科技(青岛)有限公司 Microbial detection device
CN105552123A (en) * 2016-01-25 2016-05-04 南开大学 Silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor
CN106770566A (en) * 2016-11-25 2017-05-31 深圳大学 The detection method of Salmonella sensor, preparation method and salmonella concentration
CN109585567A (en) * 2018-11-22 2019-04-05 武汉大学 High-performance indium gallium zinc oxygroup double-layer structure thin film transistor (TFT) and preparation method thereof
CN109801975A (en) * 2019-01-15 2019-05-24 天津大学 Flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100053624A1 (en) * 2008-08-29 2010-03-04 Kyung-Hwa Yoo Biosensor
US20130075793A1 (en) * 2010-06-14 2013-03-28 Dai Nippon Printing Co., Ltd. Field effect transistor type biosensor
CN102435653A (en) * 2011-09-05 2012-05-02 湖南大学 Field effect transistor-based antibiotic medicine screening device and antibiotic medicine screening method
KR20130101295A (en) * 2012-03-05 2013-09-13 충남대학교산학협력단 Screening method for anti-mycobacterial drugs
CN204422470U (en) * 2015-01-07 2015-06-24 融智生物科技(青岛)有限公司 Microbial detection device
CN105552123A (en) * 2016-01-25 2016-05-04 南开大学 Silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor
CN106770566A (en) * 2016-11-25 2017-05-31 深圳大学 The detection method of Salmonella sensor, preparation method and salmonella concentration
CN109585567A (en) * 2018-11-22 2019-04-05 武汉大学 High-performance indium gallium zinc oxygroup double-layer structure thin film transistor (TFT) and preparation method thereof
CN109801975A (en) * 2019-01-15 2019-05-24 天津大学 Flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
MYUNG-SIC CHAE ET AL: "IGZO-based electrolyte-gated field-effect transistor for in situ biological sensing platform", 《SENSORS AND ACTUATORS B: CHEMICAL》 *
NARENDRA KUMAR ET AL: "Back-Channel Electrolyte-Gated a-IGZO Dual-Gate Thin-Film Transistor for Enhancement of pH Sensitivity Over Nernst Limit", 《IEEE ELECTRON DEVICE LETTERS》 *
NARENDRA KUMAR等: "Enhanced pH sensitivity over the Nernst limit of electrolyte gated a-IGZO thin film transistor using branched polyethylenimine", 《RSC ADVANCES》 *
吴虢东等: "抗结核天然药物筛选的巨噬细胞模型研究", 《昆明医学院学报》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111307912A (en) * 2020-03-05 2020-06-19 苏州微湃医疗科技有限公司 Field-effect tube biosensor and preparation method thereof
CN111307912B (en) * 2020-03-05 2022-08-09 苏州微湃医疗科技有限公司 Field-effect tube biosensor and preparation method thereof
CN113466301A (en) * 2021-07-29 2021-10-01 武汉大学 Biochip for rapidly screening bladder cancer markers and preparation method and application thereof

Also Published As

Publication number Publication date
CN110398528B (en) 2022-04-12

Similar Documents

Publication Publication Date Title
Tixier-Mita et al. Review on thin-film transistor technology, its applications, and possible new applications to biological cells
Xu et al. Cell-based biosensors based on light-addressable potentiometric sensors for single cell monitoring
Liu et al. Monitoring of bacteria biofilms forming process by in-situ impedimetric biosensor chip
Daza et al. Monitoring living cell assays with bio-impedance sensors
Kireev et al. Graphene transistors for interfacing with cells: towards a deeper understanding of liquid gating and sensitivity
Kireev et al. Graphene multielectrode arrays as a versatile tool for extracellular measurements
US8227223B2 (en) Method and apparatus for facilitating evaluating migration of cells in vitro
CN102435653A (en) Field effect transistor-based antibiotic medicine screening device and antibiotic medicine screening method
CN110398528A (en) A kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT)
Hondroulis et al. Electrical field manipulation of cancer cell behavior monitored by whole cell biosensing device
Sakata et al. Ion sensitive transparent-gate transistor for visible cell sensing
Wu et al. Opportunities and dilemmas of in vitro nano neural electrodes
CN109959679B (en) Vertical multi-electrode impedance sensor for real-time monitoring of 3D tumor cell migration and preparation method
Özsoylu et al. Electrochemical cell-based biosensors for biomedical applications
Siddiquei et al. Electrical cell-substrate impedance sensing (ECIS) based biosensor for characterization of DF-1 cells
CN102495121A (en) Microelectrode array sensor
Zikmund et al. Biofilm detection by the impedance method
CN107354087B (en) Myocardial cell growth state monitoring system based on degradable biosensor
Strong et al. A microelectrode array for real-time neurochemical and neuroelectrical recording in vitro
Kaneko et al. Extracellular field potential recording of single cardiomyocytes in agarose microchambers using microelectrode array
JP3765464B2 (en) Microorganism carrier body, microorganism count measuring apparatus and microorganism count measuring method
Caviglia et al. Quantitative label-free cell proliferation tracking with a versatile electrochemical impedance detection platform
CN104655698B (en) Graphene/graphene oxide tiny array electrode and preparation method and application
Izak et al. Hydrogen-terminated diamond sensors for electrical monitoring of cells
Shaik et al. Electrical stimulation, recording and impedance-based real-time position detection of cultured neurons using thin-film-transistor Array

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant