CN110385150A - Dielectric particles manipulate chip - Google Patents
Dielectric particles manipulate chip Download PDFInfo
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- CN110385150A CN110385150A CN201810351826.0A CN201810351826A CN110385150A CN 110385150 A CN110385150 A CN 110385150A CN 201810351826 A CN201810351826 A CN 201810351826A CN 110385150 A CN110385150 A CN 110385150A
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- dielectric
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- fourchette
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/50273—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means or forces applied to move the fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502761—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip specially adapted for handling suspended solids or molecules independently from the bulk fluid flow, e.g. for trapping or sorting beads, for physically stretching molecules
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/12—Specific details about manufacturing devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2400/00—Moving or stopping fluids
- B01L2400/04—Moving fluids with specific forces or mechanical means
- B01L2400/0403—Moving fluids with specific forces or mechanical means specific forces
- B01L2400/0415—Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic
- B01L2400/0424—Dielectrophoretic forces
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Dispersion Chemistry (AREA)
- Analytical Chemistry (AREA)
- Hematology (AREA)
- Clinical Laboratory Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Fluid Mechanics (AREA)
- Physics & Mathematics (AREA)
- Electrostatic Separation (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
A kind of dielectric particles manipulate chip, comprising chip body, be arranged at intervals on the chip body top surface first electrode layer and the second electrode lay and an overlay masking described in electrode layer dielectric layer.The first electrode layer has multiple first fourchette electrode portions, and the second electrode lay has multiple second fourchette electrode portions, and the first fourchette electrode portion and the second fourchette electrode portion are staggered distribution at each interval.The dielectric layer is made of high-dielectric coefficient semiconductor inorganic materials, and dielectric coefficient is between 3.7~80F/m.Pass through the design using high-dielectric coefficient semiconductor inorganic materials as the dielectric layer, the thickness of the dielectric layer can substantially be reduced, and dielectric particles can be greatly improved with the driving voltage of more low potential and frequency and be steered movement speed, it is a kind of dynamical innovation dielectric particles manipulation chip design.
Description
Technical field
The present invention relates to a kind of micro-fluid chips, more particularly to a kind of for manipulating the mobile microfluid core of dielectric particles
Piece.
Background technique
In micro-fluid chip field, there are mainly two types of the mobile methods of manipulation dielectric particles, and one is utilize dielectrophoresis
Power (dielectrophoresis force, DEP force), another kind are to utilize alternating current seepage effect power (AC
Electroosmosis force, ACEO force) caused by fluid vortex, such as China that applicant in this case had previously applied
Taiwan patent I507803 " method that dielectric particles manipulate chip and its manufacturing method and manipulate dielectric particles ".The patent
Case is mainly to be designed using the structure for two fourchette shape electrode layers that chip body top surface is arranged in, and be covered on the electrode
The structure design of the dielectric layer of layer top, and can simultaneously using the reciprocation of dielectrophoretic force and alternating current seepage effect power come
The displacement of the dielectric particles in specimen liquid is manipulated, and a small amount of specific dielectric particles that can be used in will be dispersed in specimen liquid are concentrated
In the privileged site of chip, for subsequent survey.
Although the Patent Case can succeed, integration carries out the manipulation of dielectric particles using above two active force, because
The dielectric layer being covered on the electrode layer is made of photoresist, such as SU-8 photoresist, for fear of the photoresist itself
Material property, 1200nm can be up to by being coated with the thickness of the dielectric layer constituted, thus the electrode layer be located at the dielectric
Layer top specimen liquid in dielectric particles distance farther out so that the electrode layer is driven to generate the dielectrophoretic force and the friendship
The driving voltage of galvanic electricity seepage effect power need to reach 40VppMore than, and driving voltage frequency need to be up to 1000Hz or more.
Summary of the invention
The purpose of the present invention is to provide a kind of dielectric particles of at least one disadvantage that can improve the prior art to manipulate core
Piece.
Dielectric particles of the present invention manipulate chip, comprising chip body, are arranged at intervals on the first of the chip body top surface
First electrode layer described in electrode layer and the second electrode lay and overlay masking is arranged with the second electrode lay is fixed on the core
The dielectric layer of piece body top surface.The first electrode layer has first connecting portion and multiple first fourchette electrode portions, second electrode
Layer has the second connecting portion and multiple second fourchette electrode portions with the first connecting portion separately, the first fourchette electrode
Portion extends from the first connecting portion towards the second connecting portion, and the second fourchette electrode portion is from the second connecting portion towards institute
State first connecting portion extension, the first fourchette electrode portion and the second fourchette electrode portion are staggered point at each interval
Cloth.The dielectric layer is made of high-dielectric coefficient semiconductor inorganic materials, the high-dielectric coefficient semiconductor inorganic materials
Dielectric coefficient is between 3.7~80F/m.
Dielectric particles of the present invention manipulate chip, and the first electrode layer is radially inner and outer with the second electrode lay
It is arranged at intervals on the chip body, the second connecting portion is annular in shape, and interval is surrounded on the first connecting portion radial direction
Outside, the second fourchette electrode portion be spaced apart along the second connecting portion inner peripheral it is radial from the second connecting portion
Inside towards the first connecting portion projection, the first fourchette electrode portion is to be spaced apart ground diameter along the first connecting portion periphery
To outward towards second connecting portion extension.
Dielectric particles of the present invention manipulate chip, and the high-dielectric coefficient semiconductor inorganic materials are to be selected from
SiO2、Si3N4、HfO2And TiO2。
Dielectric particles of the present invention manipulate chip, and the thickness range of the dielectric layer is between 100~300nm.
Dielectric particles of the present invention manipulate chip, the high-dielectric coefficient semiconductor inorganic materials be by plating,
Physical vaporous deposition, chemical vapour deposition technique or rotary coating mode are coating to be fixed on chip body.
Dielectric particles of the present invention manipulate chip, and every one first fourchette electrode portion is radial from the first connecting portion
Extend outward and wide strip, every one second fourchette electrode portion are radially to extend inside from the second connecting portion and be in width
Spend the triangle of gradually narrow contracting.
The beneficial effects of the present invention are: the present invention passes through using high-dielectric coefficient semiconductor inorganic materials as dielectric layer
Design, can substantially reduce the thickness of the dielectric layer, enable manufactured dielectric particles manipulation chip with more low potential and frequency
Driving voltage drives the dielectric particles in dielectrophoresis liquid, and can greatly improve the movement speed for the dielectric particles being steered, and is one
Kind more energy conservation and environmental protection and dynamical innovation dielectric particles manipulation chip.
Detailed description of the invention
Other features of the invention and effect will be clearly presented in the embodiment referring to schema, in which:
Fig. 1 is the stereoscopic schematic diagram of a first embodiment of dielectric particles manipulation chip of the present invention；
Fig. 2 is the schematic top plan view of the first embodiment；
Fig. 3 is sectional view of the Fig. 2 along 3-3 line；
Fig. 4 is the signal curve graph of the corresponding alternating current voltage applied of dielectric particles movement speed of the first embodiment,
Wherein, the dielectric layer of dielectric particles manipulation chip is SiO2；
Fig. 5 is the signal curve graph of the corresponding alternating current voltage applied of dielectric particles flow velocity of the first embodiment, wherein
The dielectric layer that the dielectric particles manipulate chip is Si3N4；
Fig. 6 is the signal curve graph of the corresponding alternating current voltage applied of dielectric particles flow velocity of the first embodiment, wherein
The dielectric layer that the dielectric particles manipulate chip is HfO2；
Fig. 7 is the signal curve graph of the corresponding alternating current voltage applied of dielectric particles flow velocity of the first embodiment, wherein
The dielectric layer that the dielectric particles manipulate chip is TiO2；
Fig. 8 is the signal curve graph of the corresponding alternating current voltage applied of dielectric particles flow velocity of the first embodiment, explanation
With SiO2When as dielectric layer, under the conditions of different dielectric thickness degree, dielectric particles are steered flow velocity；
Fig. 9 is the schematic top plan view of another state sample implementation of the first embodiment；And
Figure 10 is the schematic top plan view of a second embodiment of dielectric particles manipulation chip of the present invention, illustrates first electricity
The distribution of pole layer and the second electrode lay.
Specific embodiment
The present invention will be described further with regard to the following examples, it is to be understood that the embodiment only supplies
Illustrate use, and the limitation being not necessarily to be construed as in implementation of the invention, and similar component is to be identically numbered and carry out table
Show.
Refering to fig. 1,2,3, the first embodiment of dielectric particles of the present invention manipulation chip 3, be suitable for by dielectrophoretic force with
The reciprocation of alternating current seepage effect power, to manipulate the transmission of multiple dielectric particles in dielectrophoresis liquid, mixing and collect dense
Contracting.The dielectric particles can be the biological particles such as latex (latex) particle or cell, bacterium and saccharomycete, but real
Shi Shi, the dielectric particles are not limited in the above type.
Dielectric particles manipulation chip 3 is coated in one of 4 top surface of chip body comprising a chip body 4, interval
First electrode layer 5 and a second electrode lay 6 and one are coated on the chip body 4 and the overlay masking first electrode layer 5
With the dielectric layer 7 of the second electrode lay 6.
It should be noted that since the structure of the first electrode layer 5, the second electrode lay 6 and the dielectric layer 7 is all micron
Or nano-scale, for convenience of understanding, each component in schema is only the enlarged diagram of original structure, when implementation, the component ruler
Very little specification is not limited with ratio shown in schema.
The first electrode layer 5 has a circular first connecting portion 51, is multiple along 51 periphery of first connecting portion radiation
Shape distribution ground is from the first extending radially outward fourchette electrode portion 52 of the first connecting portion 51 and one from the first connecting portion 51
First conductive part 53 extending radially outward and for connecting alternating current.The second electrode lay 6 has a spacer ring around setting
It is around the first connecting portion 51 and general second connecting portion 61 annular in shape, multiple along the 61 inner peripheral interval of second connecting portion
Ground diameter is distributed to the second fourchette electrode portion 62 extended inside towards the first connecting portion 51 and one from 61 diameter of second connecting portion
Extend and be used to connect the second conductive part 63 of alternating current outside yearning for.Every one first fourchette electrode portion 52 is the length in wide extension
Strip, every one second fourchette electrode portion 62 are in the radial gradually triangle of narrow contracting inside of width, and the first fourchette electrode
Portion 52 and the second fourchette electrode portion 62 are the distributions that is staggered around 51 center of first connecting portion.
In the present first embodiment, the first electrode layer 5 and the second electrode lay 6 are ITO (indium tin
It oxide), is set to by micro electronmechanical processing procedure on the chip body 4.But implement when, the material of the electrode layer 5,6 not with
This is limited.In addition, in the present first embodiment, which is 400um, every one first fourchette electrode portion 52
Width be 50um, development length 3150um, the inner peripheral radius of the second connecting portion 61 is 3580um, adjacent every 1 the
Spacing between one fourchette electrode portion 52 and every one second fourchette electrode portion 62 is 35um, every one first fourchette electrode portion, 52 end
It is 30um with the intermarginal spacing of 61 inner circumferential of second connecting portion.
The dielectric layer 7 is made of high-dielectric coefficient semiconductor inorganic materials, the high-dielectric coefficient semiconducting inorganic material
The dielectric coefficient range of material is between 3.7~80F/m.It in the present first embodiment, is by plating mode on the chip body 4
The dielectric layer 7 is formed, thickness is between 100~300nm.But when implementing, because by high-dielectric coefficient semiconductor inorganic materials
It is coated in numerous in a manner of constituting film-form dielectric layer 7 on the chip body 4, such as passes through chemical vapor deposition (CVD), object
Physical vapor deposition (PVD), or the rotary coatings side such as spin coated glass film (SOG) and spin coating dielectric medium (SOD)
Formula.
Dielectric particles manipulation chip 3 is in use, can apply respectively spy in the first electrode layer 5 and the second electrode lay 6
The alternating current of constant voltage, frequency and waveform, and two alternating currents have 180 ° of phase differences, in addition to driving the first fourchette electrode portion
52 generate negative dielectrophoretic force with the second fourchette electrode portion 62, and by specific Jie in the dielectrophoresis liquid above it of suspending
Electric particle attracts down close to 7 top surface of dielectric layer, and is located at interval at each first fourchette electrode portion 52 and each second fourchette
Right above electrode portion 62, the alternating current seepage force constituted between the first electrode layer 5 and the second electrode lay 6 is then recycled
, it drives and the specific dielectric particles close to the dielectric layer 7 is attracted to concentrate toward 51 center of first connecting portion is mobile down, and reach
To the purpose for collecting the specific dielectric particles in dielectrophoresis liquid.
Illustrate the effect of dielectric particles manipulation chip 3 manipulation dielectric particles of the present invention with two experimental examples below.With
In lower experimental example, the high-dielectric coefficient semiconducting inorganic used by the dielectric layer 7 of dielectric particles manipulation chip 3 of the present invention
There are four types of materials, respectively SiO2(Silicon dioxide)、HfO2(Hafnium dioxide)、TiO2(Titanium
) and Si dioxide3N4(Silicon nitride), and with existing dielectric layer material (SU- disclosed in this case prior art
8 photoresists) constituted dielectric particles manipulation chip as a control group.Wherein, SiO2Dielectric coefficient be 3.7F/m, Si3N4's
Dielectric coefficient is 7.5F/m, HfO2Dielectric coefficient be 25F/m, TiO2Dielectric coefficient be 80F/m.
Dielectric particles used in above-mentioned experimental example be lactic acid bacteria (Lactic Acid Bacteria, abbreviation LAB,
BCRC910525), lactic acid bacteria living body is diluted with secondary water (DI water) to deploy the bacteria-containing dielectrophoresis liquid tested,
Lactic acid bacteria concentration in the dielectrophoresis liquid is 1 × 106CFU/ml, due to using thallus prepare dielectrophoresis liquid as the prior art, because
This is no longer described in detail.When implementation, to be collocated with the microscope device of video capture device (microfire CCD camera)
(OLYMPUS IX70) captures the micro-imaging of each dielectric particles manipulation chip 3, and capture rate is 10frames/sec, so as to
Analyze the movement speed of dielectric particles.
SU-8 photoresist is to be coated with to be set on chip body in a manner of rotary coating, the dielectric layer constituted with a thickness of
1200nm, and the driving voltage (10V used in testingpp~50 Vpp) under the conditions of, which need to reach 1000Hz,
The alternating current seepage flow field of force generated can be just set to be enough to drive the dielectric particles in dielectrophoresis liquid mobile.In dielectric layer type for being situated between
In the experiment of the influence of electric particle manipulation flow velocity, the thickness of the dielectric layer 7 of this case is fixed as 200 nm, and drive voltage range is situated between
In 4Vpp~12Vpp, driving voltage frequency range is between 100Hz~500Hz.Flow velocity is manipulated to dielectric particles in medium thickness
Influence experiment in, 7 thickness range of dielectric layer of this case is between 100nm~300nm, and drive voltage range is between 4 Vpp~
12Vpp, driving voltage frequency is fixed as 500Hz.
Refering to Fig. 2,4~7, by the signal curve of control group it is found that when driving voltage frequency is 1000Hz, with
The promotion of driving voltage current potential, the movement speed of dielectric particles also slowly promoted, bestowing 1000Hz, 50VppDriving voltage
In the case of, dielectric particles peak flow rate (PFR) is only up to 18 μm/sec.Opposite, with SiO2When as dielectric layer 7, in driving voltage frequency
When for 100Hz, 300Hz and 500Hz, 4V is only neededppDriving voltage dielectric particles can be driven mobile, when driving voltage is promoted to
12VppWhen, the movement speed of dielectric particles is up to 18 μm/sec.With HfO2When as dielectric layer 7, in driving voltage frequency 100
Hz and driving voltage are 12VppWhen, the flow velocity of dielectric particles may be up to 80 μm/sec.Likewise, with above-mentioned other two kinds of dielectric materials
The manipulation chip 3 of dielectric particles made of the dielectric layer 7 of matter can equally drive dielectric particles to produce under the conditions of above-mentioned driving voltage
Raw very high flow velocity.
Refering to Fig. 2,8, with SiO2For dielectric layer 7, under the frequency condition of fixed driving voltage, in dielectric layer 7
It is same only to need very low driving voltage when with a thickness of 100nm and 300nm, and 7 thickness of various dielectric layers is in 12VppUnder the conditions of produced
Raw dielectric particles movement speed (being greater than 40 μm/sec) is all apparently higher than existing SU-8 photoresist and dielectric particles manipulation core is made
Dielectric particles movement speed (about 20 μm/sec) in piece.
Refering to Fig. 2,9, in the present first embodiment, 61 shape of second connecting portion of the second electrode lay 6 is designed to
Annular shape, but when implementation, in other state sample implementations of the invention, the shape of the second connecting portion 61 can be changed to other geometry
Ring-type, such as rectangular ring shown in Fig. 9.
It should be noted that when the dielectric particles in dielectrophoresis liquid with different dielectric characteristic, it can be by adjusting application
In the mode of the first electrode layer 5 and 6 alternating current conditions of the second electrode lay, such as specific voltage and specific frequency, make described
Electrode layer 5,6, which is matched, generates different dielectrophoretic force and alternating current seepage effect power to the dielectric particles of different dielectric characteristic,
And it can be used to manipulate the movement of the dielectric particles of different dielectric characteristic to carry out categorised collection, such as the dead bacterium of categorised collection and viable bacteria
Deng, but it is implemented application mode and is not limited.Due to applying specific alternating current conditions between two electrode layers 5,6, with right
The dielectric particles of different dielectric characteristic generate different dielectric swimming power and alternating current seepage effect power, and manipulate each in dielectrophoresis liquid
The movement of kind dielectric particles is the prior art, therefore is no longer described in detail.
Refering to fig. 10, the difference of the second embodiment and the first embodiment of dielectric particles manipulation chip 3 of the present invention is:
The configuration design of the first electrode layer 5 and the second electrode lay 6.For convenience of description, below just for this second embodiment and this
It is described at first embodiment difference.
In the above-described first embodiment, first electrode layer 5 and the second electrode lay 6 of dielectric particles manipulation chip 3
It is designed to radially inner and outer interval shape, but in this second embodiment, which is with the second connecting portion 61
It is designed to the strip that front and back extends and left and right is spaced and parallel, the first fourchette electrode portion 52 is long along the first connecting portion 51
Extend to being spaced apart, and towards 61 direction of second connecting portion, the second fourchette electrode portion 62 is along the second connecting portion 61
It is long to being spaced apart, and extend towards 51 direction of first connecting portion, the first fourchette electrode portion 52 and the second fourchette electricity
Pole portion 62 is the distribution that is staggered at each interval.
Structure designs whereby, equally can be using high-dielectric coefficient semiconductor inorganic materials as the design of the dielectric layer 7, greatly
Width reduces the thickness of the dielectric layer 7, and can reduce for drive dielectric particles manipulation chip 3 generate required dielectrophoretic force with
The current potential and frequency of the alternating current of alternating current seepage force, and the movement speed of dielectric particles being steered can be effectively improved.
In conclusion the present invention is by the design using high-dielectric coefficient semiconductor inorganic materials as the dielectric layer 7, it can be big
Width reduces the thickness of the dielectric layer 7, enables manufactured dielectric particles manipulation chip 3 with the driving voltage of more low potential and frequency
The dielectric particles in dielectrophoresis liquid are driven, and the movement speed for the dielectric particles being steered can be greatly improved, and can substantially be contracted
The collection concentration times of specific dielectric particles in short specimen liquid, and then shorten Check-Out Time, and use because that can be greatly reduced
The current potential of alternating current, and can more energy conservation and environmental protection, be a kind of very innovation and dynamical dielectric particles manipulation chip 3 is set
Meter.Therefore, it can reach the purpose of the present invention really.
Only as described above, is only the embodiment of the present invention, all when cannot be limited the scope of implementation of the present invention with this
It is simple equivalent changes and modifications made by the range and description according to claims of the present invention, all still belongs to the present invention
In the range of patent covers.
Claims (6)
1. a kind of dielectric particles manipulate chip, comprising chip body, it is arranged at intervals at the first electrode of the chip body top surface
First electrode layer described in layer and the second electrode lay and overlay masking is arranged with the second electrode lay is fixed on the chip sheet
The dielectric layer of body top surface, the first electrode layer have first connecting portion and multiple first fourchette electrode portions, the second electrode
Layer has the second connecting portion and multiple second fourchette electrode portions with the first connecting portion separately, the first fourchette electrode portion
Extend from the first connecting portion towards the second connecting portion, the second fourchette electrode portion is from the second connecting portion towards described
First connecting portion extends, and the first fourchette electrode portion and the second fourchette electrode portion are staggered distribution at each interval,
It is characterized by: the dielectric layer is made of high-dielectric coefficient semiconductor inorganic materials, and the high-dielectric coefficient semiconductor
The dielectric coefficient of inorganic material is between 3.7~80F/m.
2. dielectric particles according to claim 1 manipulate chip, it is characterised in that: the first electrode layer and described second
Electrode layer be it is radially inner and outer be arranged at intervals on the chip body, the second connecting portion is annular in shape, and interval is surrounded on institute
State first connecting portion radial outside, the second fourchette electrode portion be spaced apart along the second connecting portion inner peripheral from institute
It is radial inside towards the first connecting portion projection to state second connecting portion, the first fourchette electrode portion is along the first connecting portion
Periphery extends towards the second connecting portion with being spaced apart radially outward.
3. dielectric particles according to claim 1 or 2 manipulate chip, it is characterised in that: the high-dielectric coefficient semiconductor
Inorganic material is selected from SiO2、Si3N4、HfO2And TiO2。
4. dielectric particles according to claim 1 or 2 manipulate chip, it is characterised in that: the thickness range of the dielectric layer
Between 100~300nm.
5. dielectric particles according to claim 4 manipulate chip, it is characterised in that: the high-dielectric coefficient semiconducting inorganic
Material is to be fixed on the chip by the way that plating, physical vaporous deposition, chemical vapour deposition technique or rotary coating mode are coating
Ontology.
6. dielectric particles according to claim 2 manipulate chip, it is characterised in that: every one first fourchette electrode portion is from institute
The extending radially outward and wide strip of first connecting portion is stated, every one second fourchette electrode portion is from the second connecting portion diameter
To extend inside and in the triangle of width gradually narrow contracting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810351826.0A CN110385150A (en) | 2018-04-19 | 2018-04-19 | Dielectric particles manipulate chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810351826.0A CN110385150A (en) | 2018-04-19 | 2018-04-19 | Dielectric particles manipulate chip |
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| CN110385150A true CN110385150A (en) | 2019-10-29 |
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| CN201810351826.0A Pending CN110385150A (en) | 2018-04-19 | 2018-04-19 | Dielectric particles manipulate chip |
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